CN106252190A - Plasma processing apparatus and the control method of plasma processing apparatus - Google Patents
Plasma processing apparatus and the control method of plasma processing apparatus Download PDFInfo
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- CN106252190A CN106252190A CN201610408989.9A CN201610408989A CN106252190A CN 106252190 A CN106252190 A CN 106252190A CN 201610408989 A CN201610408989 A CN 201610408989A CN 106252190 A CN106252190 A CN 106252190A
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- temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
nullThe present invention provides a kind of and need not necessarily need to be based on sensation or experience sets treatment conditions just it can be avoided that the plasma processing apparatus of the damage of window component，Its control device (100) receives the input of the processing scheme of the Cement Composite Treated by Plasma of substrate (G)，The prediction arrival temperature difference of the multiple temperature prediction points set at window component (22) when making the temperature of window component (22) become poised state based on repeatedly performing Cement Composite Treated by Plasma by this processing scheme，Judge whether the electrolyte being arranged in the window component (22) processed between space (S) and inductive coupling antenna (50) is damaged，In the case of window component (22) is damaged, processing scheme is not registered in storage part (102) judging，Judging processing scheme to be registered in the case of window component (22) is not damaged storage part (102)，The Cement Composite Treated by Plasma of substrate (G) is performed according to the processing scheme being stored in storage part (102).
Description
Technical field
The present invention relates to substrate is implemented the plasma processing apparatus of Cement Composite Treated by Plasma, plasma processing apparatus
Control method and to for controlling the program recorded medium that the program of plasma processing apparatus stores.
Background technology
In the panel manufacturing process of flat faced display (FPD), use plasma processing apparatus, to glass substrate etc.
Substrate implement to utilize the film forming of plasma to process and the retrofit of etch processes, ashing process etc., thus, on substrate
Form device and electrode, the distribution etc. of pixel.In plasma processing apparatus, such as in the inside of the process chamber that can reduce pressure
Configure has as staging substrates on the mounting table of the pedestal of lower electrode, to process gases at process chamber supply on one side
To pedestal supply high frequency electric power, thus, plasma is produced above the substrate in process chamber.
As one of plasma processing apparatus, there is device for processing inductive coupling plasmas, as one example
Son, it is known to following structure: utilize the window component being made up of electrolyte, constitutes the lining of mounting table with the inside being arranged in chamber
The upper wall of the chamber that end mounting surface is relative, is provided with the structure of the antenna (radio-frequency induction coil) of vortex shape etc. on window component.
With the maximization of substrate in recent years, plasma processing apparatus the most constantly maximizes, and therefore, constitutes chamber upper wall
Window component the most constantly maximize (large area).Here, the temperature of window component owing to carrying out the heat of the plasma of self-generating and
During rising, produce temperature at window component little to plasma density from the central part (immediately below antenna) that plasma density is big
Circumference (peripheral part of antenna) goes and the Temperature Distribution of step-down.Stress is produced at window component due to such Temperature Distribution,
Window component is damaged due to this stress.
The method of damage when rising as the temperature avoiding window component, it is proposed that the periphery of window component is heated
Method and method that the central part of window component is cooled down etc. (referring for example to patent documentation 1).
But, in the above prior art, need window component is added chiller or heater, accordingly, there exist
Device constitutes and becomes the problem that complicated or device entirety becomes to maximize.To this, it is considered to by set treatment conditions so that
The temperature difference produced at window component is constant too much, thus does not add chiller or heater also is able to avoid window component
The method of damage.But it is possible to avoid the treatment conditions of the damage of window component not have clear and definite benchmark, it addition, according to window
The treatment conditions being sized to set of parts are different, and therefore, the setting for the treatment of conditions, in a practical situation by operator with sense
Feel or experience is carried out.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2015-22855 publication
Summary of the invention
It is an object of the invention to provide a kind of sensation that need not necessarily need to be based on operator or experience sets treatment conditions and just can
Avoid the plasma processing apparatus of the damage of window component.It addition, the present invention also aims to provide for avoiding window component
The control method of plasma processing apparatus of damage and storage for performing the storage medium of program of this control.
To achieve these goals, the plasma processing apparatus that first aspect is recorded, its plasma in chamber
Formation zone produces inductively coupled plasma, thus the substrate being accommodated in above-mentioned chamber is implemented Cement Composite Treated by Plasma, should
Plasma processing apparatus is characterised by, including: make above-mentioned inductively coupled plasma result from above-mentioned plasma and generate
The inductive coupling antenna in region；It is arranged in the window component between above-mentioned plasma generating area and above-mentioned inductive coupling antenna；
With the control portion controlled the Cement Composite Treated by Plasma that above-mentioned substrate performs, above-mentioned control portion includes: above-mentioned substrate is performed by storage
The storage part of processing scheme of Cement Composite Treated by Plasma；Enforcement division, it is according to being stored in the processing scheme of above-mentioned storage part, to upper
State substrate and perform Cement Composite Treated by Plasma；Input unit, it receives the processing scheme to the Cement Composite Treated by Plasma that above-mentioned substrate performs
Input；Judging part, it is when the processing scheme received according to above-mentioned input unit performs Cement Composite Treated by Plasma, it is judged that above-mentioned window
Whether parts are damaged；And register, it is in the case of above-mentioned judging part judges that above-mentioned window component is damaged, and refusal will
Above-mentioned processing scheme is registered in above-mentioned storage part, in the case of above-mentioned judging part judges that above-mentioned window component is not damaged,
Above-mentioned processing scheme is registered in above-mentioned storage part.
The plasma processing apparatus that second aspect is recorded, it is characterised in that at the plasma that first aspect is recorded
In reason device, above-mentioned window component is formed by electrolyte, and above-mentioned judging part judges whether above-mentioned electrolyte is damaged.
The plasma processing apparatus that the third aspect is recorded, it is characterised in that at the plasma that first aspect is recorded
In reason device, above-mentioned window component has electrolyte and is arranged on electricity Jie of side, above-mentioned dielectric above-mentioned plasma generating area
Matter cover, above-mentioned judging part judges whether above-mentioned dielectric cap is damaged.
The plasma processing apparatus that fourth aspect is recorded, it is characterised in that at the plasma that first aspect is recorded
In reason device, above-mentioned window component has metal and the electrolyte of the side, above-mentioned plasma generating area being arranged on above-mentioned metal
Cover, above-mentioned judging part judges whether above-mentioned dielectric cap is damaged.
The plasma processing apparatus that 5th aspect is recorded, it is characterised in that record in first aspect to fourth aspect
In plasma processing apparatus, above-mentioned judging part, the processing scheme for receiving according to above-mentioned input unit repeatedly perform etc. from
When daughter processes and makes the temperature of above-mentioned window component become poised state, to be arranged at above-mentioned window component multiple temperature prediction points
Prediction arrive temperature difference, use predetermined calculating formula to calculate, in above-mentioned difference than the little situation of threshold value of regulation
Under, it is judged that above-mentioned window component is not damaged.
The plasma processing apparatus that 6th aspect is recorded, it is characterised in that at the plasma that the 5th aspect is recorded
In reason device, above-mentioned multiple temperature prediction points at least include 1 point of the underface of above-mentioned inductive coupling antenna and above-mentioned window portion
1 point of the circumference of part.
The plasma processing apparatus that 7th aspect is recorded, it is characterised in that at the plasma that the 5th aspect is recorded
In reason device, above-mentioned multiple temperature prediction points at least include 1 point of the underface of above-mentioned inductive coupling antenna and above-mentioned window portion
2 points of the circumference of part, above-mentioned judging part calculates the prediction of 1 point of the underface of above-mentioned inductive coupling antenna and arrives temperature
Poor with the first difference of the 2 of the circumference of above-mentioned window component point respective prediction arrival temperature and second, at above-mentioned first difference ratio
First threshold little and above-mentioned second difference less than Second Threshold in the case of, it is judged that above-mentioned window component is not damaged.
The plasma processing apparatus that eighth aspect is recorded, it is characterised in that at the plasma that the 5th aspect is recorded
In reason device, above-mentioned multiple temperature prediction points at least include 1 point of the underface of above-mentioned inductive coupling antenna and above-mentioned window portion
2 points of the circumference of part, above-mentioned judging part calculates the prediction of 1 point of the underface of above-mentioned inductive coupling antenna and arrives temperature
Prediction respective with the 2 of the circumference of above-mentioned window component points arrives the first difference of temperature and second poor, above-mentioned first poor and
In the case of above-mentioned second difference sum is less than the 3rd threshold value, it is judged that above-mentioned window component is not damaged.
To achieve these goals, the control method of the plasma processing apparatus that the 9th aspect is recorded, wherein, above-mentioned etc.
Gas ions processing means plasma generating area in chamber produces inductively coupled plasma, thus above-mentioned to being accommodated in
Substrate in chamber implements Cement Composite Treated by Plasma, and the control method of above-mentioned plasma processing apparatus is characterised by, including: defeated
Enter step, receive the input of the processing scheme to the Cement Composite Treated by Plasma that above-mentioned substrate performs；With judge step, according to above-mentioned
When processing scheme performs Cement Composite Treated by Plasma, it is judged that be arranged in above-mentioned plasma generating area and above-mentioned inductive coupling antenna
Between the electrolyte that comprised of window component whether be damaged；Register step, judges above-mentioned window component in above-mentioned judgement step
In the case of being damaged, above-mentioned processing scheme is not registered in above-mentioned storage part, is judging that above-mentioned window component does not damage
In the case of Huai, above-mentioned processing scheme is registered in above-mentioned storage part；With perform step, according to by above-mentioned register step upper
State storage part registration processing scheme come to above-mentioned substrate perform Cement Composite Treated by Plasma, in above-mentioned judgement step, for according to
When above-mentioned processing scheme repeatedly performs Cement Composite Treated by Plasma and makes the temperature of above-mentioned window component become poised state, be arranged at
The prediction of the multiple temperature prediction points stating window component arrives temperature difference, uses predetermined calculating formula to calculate, upper
State difference than regulation threshold value little in the case of, it is judged that above-mentioned window component is not damaged.
To achieve these goals, the storage medium that the tenth aspect is recorded, its be store for make computer execution etc. from
The program of the rate-determining steps performed in daughter processing means, wherein, above-mentioned plasma processing apparatus plasma in chamber
Body formation zone produces inductively coupled plasma, thus the substrate being accommodated in above-mentioned chamber is implemented Cement Composite Treated by Plasma,
Above-mentioned rate-determining steps includes: receive the input step of the input of the processing scheme to the Cement Composite Treated by Plasma that above-mentioned substrate performs；
With when performing Cement Composite Treated by Plasma according to above-mentioned processing scheme, it is judged that be arranged in above-mentioned plasma generating area with above-mentioned
The judgement the step whether electrolyte that the window component between inductive coupling antenna is comprised is damaged；In above-mentioned judgement step
Judge that above-mentioned processing scheme is not registered in storage part in the case of being damaged by above-mentioned window component, judging above-mentioned window portion
Above-mentioned processing scheme is registered in the register step of storage part by part in the case of not being damaged；With according to by above-mentioned registration
Step is stored in the processing scheme of above-mentioned storage part and above-mentioned substrate performs the execution step of Cement Composite Treated by Plasma, in above-mentioned judgement
In step, the processing scheme for being received according to above-mentioned input unit repeatedly performs Cement Composite Treated by Plasma and makes above-mentioned window component
Predictions when temperature becomes poised state, multiple temperature prediction points that be set in above-mentioned window component arrive temperature difference, use
Predetermined calculating formula calculates, in the case of above-mentioned difference is less than the threshold value of regulation, it is judged that above-mentioned window component is not sent out
Raw damage.
Invention effect
According to the present invention, the window component at plasma processing apparatus sets multiple temperature prediction points, based on be transfused to
Processing scheme, calculates the prediction between temperature prediction point when making the temperature of window component increase due to the heat from plasma
Arrive temperature difference, it is compared with threshold value, in the case of implementing Cement Composite Treated by Plasma based on this processing scheme, it is judged that window
Whether parts are damaged.Its result, in the case of judging that window component is likely to occur damage, refuses this processing scheme to control
The registration of device processed so that can not perform according to the Cement Composite Treated by Plasma of this processing scheme.Thus, it is not necessary to it is based on operator
Sensation or experience set treatment conditions just it can be avoided that the damage of window component.
Accompanying drawing explanation
Fig. 1 is the outline knot of the lining treatment system representing the plasma processing apparatus with embodiments of the present invention
The axonometric chart of structure.
Fig. 2 is the sectional view of the schematic configuration of the plasma processing apparatus representing that the lining treatment system of Fig. 1 possessed.
Fig. 3 is the flow process of the process that the judgement processing scheme in the control device of the lining treatment system of Fig. 1 could be registered
Figure.
Fig. 4 is to show schematically the temperature prediction point that the window component that the plasma processing apparatus to Fig. 2 is possessed sets
Figure and show schematically the figure of temperature calculation models of temperature prediction point.
Fig. 5 be show schematically respectively the temperature prediction point shown in Fig. 4 prediction arrive temperature result of calculation figure and
Prediction arrives the temperature difference example bigger than threshold value and the figure of the example less than threshold value.
Description of reference numerals
10: lining treatment system, 11: plasma processing apparatus, 21: mounting table, 22: window component, 41: plasma is raw
One-tenth high frequency electric source, 44: Setup Controller, 50: inductive coupling antenna, 100: control device, 101: microcomputer, 102: deposit
Storage portion, 103: operating portion.
Detailed description of the invention
Hereinafter, referring to the drawings embodiments of the present invention are described in detail.
Fig. 1 is the general of the lining treatment system 10 of the plasma processing apparatus 11 representing and having embodiments of the present invention
The slightly axonometric chart of structure.
Lining treatment system 10 include the FPD to glass substrate etc. substrate G implement Cement Composite Treated by Plasma such as wait from
3 plasma processing apparatus 11 of daughter etching.3 plasma processing apparatus 11 are each via gate valve 13 and horizontal cross-section
Side for the carrying room 12 of polygon-shaped (such as, horizontal cross-section is rectangle) links.Additionally, plasma processing apparatus 11
Structure is stated later with reference to Fig. 2.
Carrying room 12 also links with load lock 14 via gate valve 15.Load lock 14 is via gate valve 17
Take out of with substrate and be disposed adjacent into mechanism 16.Take out of at substrate and be disposed adjacent 2 indexers 18 into mechanism 16.Indexer 18 is used
Box 19 in mounting storage substrate G.Box 19 can receive multiple (such as 25) substrate G.
The overall action of lining treatment system 10 is controlled by controlling device 100.Control device 100 to include performing at computing
Program that the microcomputer 101 of reason and storage microcomputer 101 perform, parameter, the processing scheme of Cement Composite Treated by Plasma
Storage part 102.It addition, control device 100 to receive the operation of operator as user interface, it addition, include providing to operator
The operating portion 103 of the various information in lining treatment system 10.
When substrate G being implemented plasma etching in lining treatment system 10, first, substrate taking out of will into mechanism 16
The substrate G being accommodated in box 19 is moved to the inside of load lock 14.Now, in the inside of load lock 14
When there is the substrate G that plasma etching completes, the substrate G that this plasma etching completes quilt in load lock 14
Take out of, with the substrate G displacement not etched.When moving into substrate G to the inside of load lock 14, gate valve 17 is closed.
Then, after the inside of load lock 14 is depressurized to the vacuum of regulation, by carrying room 12 and loading
Gate valve 15 between lock 14 is opened.Then, the substrate G of the inside of load lock 14 is by carrying room 12
After the transport mechanism (not shown) in portion is moved to the inside of carrying room 12, gate valve 15 is closed.
Then, the gate valve 13 between carrying room 12 and plasma processing apparatus 11 is opened, transport mechanism will not lose
The substrate G carved is moved to the inside of plasma processing apparatus 11.Now, when existing in the inside of plasma processing apparatus 11
During the substrate G that plasma etching completes, the substrate G that this plasma etching completes is taken out of, and puts with the substrate G not etched
Change.Afterwards, the plasma processing apparatus 11 substrate G to being moved to is utilized to implement plasma etching.
Fig. 2 is the sectional view of the schematic configuration representing plasma processing apparatus 11.Plasma processing apparatus 11 is concrete
For be the plasma processing apparatus of inductive type.Plasma processing apparatus 11 includes: the chamber 20 of substantially rectangular shape
(process chamber)；It is arranged in the lower section in chamber 20, substrate G is positioned in the mounting table 21 at top；As chamber 20 upper wall with
The window component 22 of mounting table 21 relative configuration；The inductance coupling formed by Vorticose conductor with the upside being arranged in window component 22
Close antenna 50.The process space as the region generating inductively coupled plasma is formed between mounting table 21 and window component 22
S。
The built-in pedestal 23 formed by conductor of mounting table 21, pedestal 23 is via adapter 25 with biasing with high frequency electric source 24 even
Connect.It addition, configure the Electrostatic Absorption portion (ESC) 26 formed by the electrolyte of stratiform, Electrostatic Absorption portion on the top of mounting table 21
26 have electrode for electrostatic attraction 27 built-in in the way of being clipped by the dielectric layer on upper strata and the dielectric layer of lower floor.Electrostatic is inhaled
Attached electrode 27 is connected with DC source 28, when DC source 28 applies DC voltage to electrode for electrostatic attraction 27, and Electrostatic Absorption
Portion 26 carries out Electrostatic Absorption by electrostatic force to the substrate G being placed in mounting table 21.Biasing is with high frequency electric source 24 by frequency ratio relatively
Low RF power is supplied to pedestal 23, makes the substrate G of portion 26 by electrostatic adsorption Electrostatic Absorption produce DC bias potential.This
Outward, Electrostatic Absorption portion 26 can be formed as plate member, alternatively, it is also possible to formed as sputtered films of bismuth in mounting table 21.
Mounting table 21 is built-in carries out thermoregulator cooling medium stream 29, cooling medium stream 29 and cooling to pedestal 23
Media feed mechanism (not shown) connects.It addition, mounting table 21 has for promoting heat transfer between mounting table 21 and substrate G
Heat-conducting gas supply mechanism 30.Heat-conducting gas supply mechanism 30 has heat-conducting gas supply source 31 and gas flow controller 32,
Heat-conducting gas is supplied to mounting table 21.Mounting table 21 includes: in multiple heat-conducting gas holes 33 of upper opening；Pass with making each
The heat-conducting gas feed path 34 that steam body opening 33 connects with heat-conducting gas supply mechanism 30.In mounting table 21, inhaled by electrostatic
Invest and produce small gap between the back side and the top of mounting table 21 of the substrate G in Electrostatic Absorption portion 26, but, from heat transfer gas
The heat-conducting gas of body opening 33 supply is filled in this gap, thereby, it is possible to improve substrate G and the heat transfer of mounting table 21 or heat turn
Move efficiency, it is possible to increase utilize the cooling effectiveness of the substrate G that mounting table 21 carries out.
For the gas supply port 40 of process gases at supply in chamber 20 is arranged on the side wall upper part of chamber 20, gas supplies
It is connected with processing gas supply mechanism 35 to mouth 40.Process gas supply mechanism 35 and there is place process gases supply source 36, gas stream
Amount controller 37 and pressure-control valve 38.From process gas supply mechanism 35 be supplied at gas supply port 40 process gases by from
Gas supply port 40 imports to process space S.Additionally, gas supply port 40 also is able to be arranged on window component 22.
Inductive coupling antenna 50 is connected with plasma generation high frequency electric source 41 via adapter 42, and plasma generates
With high frequency electric source 41, the RF power that plasma higher for frequency generates is supplied to inductive coupling antenna 50.It is supplied to
The inductive coupling antenna 50 of the RF power that gas ions generates is processing space S generation electric field.
Window component 22 is formed by electrolyte or metal.Window component 22 is in the case of being formed by electrolyte, such as by stone
English or pottery etc. are formed.Window component 22 in the case of being formed by metal, such as, is formed by aluminum etc..Additionally, have window component
22 situations about being formed by multiple parts, in this case, in order to protection setting parts between parts (are such as formed by metal
Parts) impact of not subject plasma, and the process space S side of window component 22 is provided with dielectric cap.Dielectric cap is such as
Formed by quartz or pottery.
Plasma processing apparatus 11 includes the exhaustor 43 connected with the inside of chamber 20, it is possible to by exhaustor 43 row
Go out the gas of the inside of chamber 20, make the decompression state that inside is regulation of chamber 20.
The action of each element of plasma processing apparatus 11, at control device based on lining treatment system 10
Under the 100 unified controls carried out, perform regulated procedure by Setup Controller 44 and be controlled.
When utilizing plasma processing apparatus 11 that substrate G is implemented plasma etching, space S decompression will be processed, will
Place's process gases imports to process space S, and, supply, to inductive coupling antenna 50, the RF power that plasma generates.By
This, produce electric field processing space S.The place's process gases being directed to process space S is excited by electric field and generates plasma, etc.
Cation in gas ions is guided to substrate G by the DC bias potential produced at substrate G across mounting table 21, implements substrate G
Plasma etching.It addition, the free radical in plasma arrives substrate G, and substrate G is implemented plasma etching.
In plasma processing apparatus 11, configure in the way of inductive coupling antenna 50 covers whole of substrate G, by
This, it is possible in the way of covering whole of substrate G, generate plasma, therefore, it is possible to real equably to the whole face of substrate G
Execute plasma etching.Now, the temperature of window component 22, because rising from plasma to the heat of window component 22, produces temperature
Central part immediately below the inductive coupling antenna 50 that the density of plasma is big goes to the circumference that the density of plasma is little
And the Temperature Distribution of step-down.Problems with is caused: constituting the electrolyte of window component 22 (by electrolyte shape because of this Temperature Distribution
The window component 22 self become or the dielectric cap covering window component 22) produce the three-dimensional deformation caused because of uneven thermal expansion
And produce internal stress, cause due to the internal stress of generation the electrolyte constituting window component 22 to be damaged.
Here, in order to perform the desired Cement Composite Treated by Plasma of operator, operator in plasma processing apparatus 11
Operation operating portion 103, the processing scheme input control device 100 that a series for the treatment of conditions are collected.Then, it is transfused to
Processing scheme be stored in storage parts 102 such as controlling the semiconductor memory that possessed of device 100, be registered in control device
100.The microcomputer 101 that control device 100 is possessed controls Setup Controller 44 so that hold according to the processing scheme of registration
Row Cement Composite Treated by Plasma.
In present embodiment, when processing scheme is transfused to control device 100, according to input processing scheme execution etc. from
Before daughter processes, it is assumed that in the case of performing Cement Composite Treated by Plasma according to the processing scheme of input, by microcomputer
101 judge whether the electrolyte constituting window component 22 is damaged.Then, it is being judged as at the electrolyte constituting window component 22
In the case of being damaged, refuse this processing scheme to the registration controlling device 100 so that this processing scheme can not perform,
Thus, it is to avoid constitute dielectric damage of window component 22.Hereinafter, its composition is illustrated.
Control device 100 and will be used for the process side of the Cement Composite Treated by Plasma that input performs in plasma processing apparatus 11
The program (hereinafter referred to as " processing scheme input program ") of case and the dielectric damage for avoiding composition window component 22 are (following
Program (hereinafter referred to as " program is avoided in damage ") referred to as " damage of window component 22 "), is stored in semiconductor memory or hard disk
Deng storage part 102, these programs are performed by the microcomputer 101 controlling device 100.Additionally, control device 100 there is work
For the operating portion 103 of user interface, operating portion 103 has such as operation screen (touch panel), operation button, operated key etc..
Fig. 3 is the flow chart controlling the process that the judgement processing scheme in device 100 could be registered.Initially, in step S1
In, operator's operation setting of lining treatment system 10 is controlling the operation screen of device 100, operation button, operated key, makes place
Reason scheme input program starts, the processing scheme of the Cement Composite Treated by Plasma that input is performed by plasma processing apparatus 11.At place
In the input of reason scheme, new production processing scheme, or compile registered processing scheme in controlling device 100.Here, process
Scheme input also includes transmitting processing scheme via communication line externally to controlling device 100.Processing scheme limits the most especially
Fixed, it is possible to by the pressure in process chamber adjust (importing of process gases and aerofluxus (evacuation)) pattern, RF power (frequency,
Voltage) applying pattern etc. constitute.Processing scheme input can be carried out by known method, therefore omits the description.
In step sl, along with the startup of processing scheme input program, damage and avoid program also to start.In step then
In S2, the processing scheme that the operator of lining treatment system 10 attempts inputting in step S1 is to the registration controlling device 100.This is stepped on
The trial of note, when being configured to such as show " registration " button at the operation screen inputted for processing scheme, should by pressing
" register " button can start.
Then, in step s3, control device 100 and journey is avoided in the processing scheme execution damage inputted in step sl
Sequence, the prediction calculating multiple temperature prediction points predetermined for window component 22 arrives temperature.In step S4 then, control
Device 100 processed avoids program to obtain predicting of multiple temperature prediction point of calculating in step s3 by executory damage
Reach temperature difference (prediction arrives temperature difference), prediction arrival temperature difference is compared with predetermined threshold value, it is judged that prediction
Arrive temperature difference less than threshold value.Additionally, to multiple temperature prediction points, prediction arrives temperature and threshold value is stated the most in detail
Say.
Control device 100, under prediction arrives the situation (in S4 being: yes) that temperature difference is less than threshold value, make process advance
To step S5, under prediction arrives the situation (in S4 being: no) that temperature difference is more than threshold value, process is made to proceed to step S6.
In step s 5, control device 100 and allow the registration of the processing scheme of input in step S1, processing scheme is registered.Now, exist
Operation screen shows and represents that processing scheme registers the information normally completed.Then, by step S5, this process terminates.Additionally,
In the case of registering another processing scheme, operator starts the process over from step S1.On the other hand, in step S6
In, control device 100 and refuse the registration of the processing scheme of input in step S1, cannot be carried out processing in operation screen display expression
The information of scheme registration, and, the information of the editor requiring processing scheme is shown at operation screen.Control device 100 in step
Make after S6 to the processing returns to step S1.
Process for above-mentioned step S3, S4 is specifically described.Fig. 4 (a) is to show schematically to set window component 22
The figure of fixed temperature prediction point.Here, at the center design temperature future position P1 of window component 22, in long side periphery
Heart design temperature future position P2.The temperature prediction point P1 of the underface of inductive coupling antenna 50, is set as an example
The position that during Cement Composite Treated by Plasma, the temperature of window component 22 is more relatively high than other position, the temperature prediction point P2 of circumference, makees
It it is the example position that is set as that the temperature of window component 22 is more relatively low than other position when Cement Composite Treated by Plasma.
Additionally, when Cement Composite Treated by Plasma, other the position relative in window component 22 becomes the position of high temperature and becomes
The position of low temperature is respectively depending on the pattern of inductive coupling antenna 50.Such as it not the Vorticose of 1 shown in Fig. 4 (a)
Antenna, but in the case of multiple inductive coupling antenna is arranged as the structure of 1 row or multiple row on window component 22, not necessarily
The central authorities of window component 22 are the position of relative maximum temperature.Therefore, measuring point for the temperature, with the pattern of inductive coupling antenna correspondingly
It is arranged on the high position of relative temperature and the low position of temperature, is preferably provided at the highest position of temperature and the minimum position of temperature
Put.
Fig. 4 (b) is the figure of the temperature calculation models showing schematically temperature prediction point P1, P2.Producing from plasma
While the heat absorption of window component 22, also produce from window component 22 to the heat radiation of surrounding, therefore, caloric receptivity with heat dissipation capacity it
Difference causes the temperature of window component 22 to rise.In plasma processing apparatus 11, generally multiple substrate G are the most gradually exchanged into
Row processes, and therefore, the temperature of window component 22 is along with repeatedly performing processing scheme to substrate G process (process over time)
And uprise.But, when a certain number of substrate G is processed, the caloric receptivity of window component 22 balances with heat dissipation capacity, thus window component
22 arrive the poised state essentially becoming uniform temperature.
The variations in temperature from the initial temperature of temperature prediction point P1, P2 when window component 22 arrives poised state is passed through
Calculate and ask for, such as can use as calculating formula:
" variations in temperature [DEG C]=(caloric receptivity-heat dissipation capacity) × thermal resistance × ((1-exp (-time/time constant)) ",
" heat dissipation capacity=(temperature-peripheral temperature of temperature prediction point) × thermal resistance ",
" caloric receptivity=(a × chamber pressure ^b) × (c × RF) ".
Above-mentioned various in, " thermal resistance " is the value at temperature prediction point, and " RF " is the high frequency for generating plasma
Power value.The respective prediction of temperature prediction point P1, P2 when window component 22 reaches poised state arrives temperature TP1, TP2, makees
" variations in temperature " for calculating is obtained with initial temperature (room temperature) sum.
Represent the value of coefficient a, b, c of the formula of caloric receptivity and for calculating the value of the thermal resistance of heat dissipation capacity by with lower section
Formula determines: uses the plasma processing apparatus 11 as physical device, the force value in high-frequency electrical force value, chamber 20 is carried out
Various changes, the actual temperature measuring temperature prediction point P1, P2, the most correctly reproduce actual measurement based on the result obtained and tie
Really.Thereby, it is possible to improve the prediction calculated to arrive temperature TP1, the reliability of TP2.
Fig. 5 (a) is the figure of the result of calculation showing schematically that the prediction of above-mentioned calculating formula arrives temperature TP1, TP2.1 lining
When the Cement Composite Treated by Plasma of end G starts, the caloric receptivity from plasma exceedes heat dissipation capacity, therefore, in the temperature of window component 22
Rise, but, when Cement Composite Treated by Plasma terminates and stops the generation of plasma, the temperature of window component 22 dispel the heat further and under
Fall.For next substrate G, the temperature of window component 22 changes too.Initially caloric receptivity is more than heat dissipation capacity, therefore, along with lining
G gradually processes at the end, and the temperature of window component 22 gradually uprises, but, a certain number of substrate G is processed and makes the temperature of window component 22
When degree uprises, heat dissipation capacity also becomes big, and therefore, the temperature of temperature prediction point P1, P2 is stable at temperature TP1, TP2 respectively, becomes balance
State.
In the case of above-mentioned calculating formula, such as, when the Cement Composite Treated by Plasma at 60 substrate G terminates, confirm temperature
The temperature of degree future position P1, P2 arrives separately at prediction and arrives temperature TP1, TP2.Then, in step s3, calculate by process side
Prediction when case performs such as 60 times arrives temperature TP1, TP2.Then, in step s 4, obtain prediction arrive temperature TP1,
Prediction between TP2 arrives temperature difference Δ T1, it is judged that whether prediction arrives temperature difference less than predetermined threshold value.Therefore, temperature prediction
The initial temperature of some P1, P2 with ask for being cancelled, so the problem that there is not this judgement when prediction arrives temperature difference Δ T1.
Fig. 5 (b) is to show schematically the figure that prediction arrives example bigger than threshold value for temperature difference Δ T1, in this case,
Judgement in step S4 is "No", processes and advances to step S6.Fig. 5 (c) is to show schematically that prediction arrives temperature difference Δ T1 ratio
The figure of the example that threshold value is little, in this case, judgement in step s 4 is "Yes", and process enters step S5.
Prediction arrives temperature difference Δ T1 and refers to greatly, and the Temperature Distribution in window component 22 produces bigger deviation, window component 22
Produce bigger stress and be susceptible to damage.Even if threshold value is window component 22 produces Temperature Distribution, window component 22 does not damages
The higher limit of temperature difference, can be based on the physical device (plasma processing apparatus of the coefficient for obtaining above-mentioned calculating formula
11) result during temperature measuring of window component 22 determines, or the result of emulation based on Finite element method etc. determines.
Threshold value according to the area of window component 22 and thickness, the pattern of inductive coupling antenna 50, the dielectric substance etc. of use and different, because of
This, set according to the specification of plasma processing apparatus 11.
Additionally, threshold value is the value being limited in plasma processing apparatus 11 processing scheme being able to carry out.Therefore, in order to
When avoiding the damage of window component 22 that the least value is set as threshold value, executable process is limited by system, the product that can manufacture
The scope (kind) of product becomes narrow.
As one of method avoiding this problem, it is possible to enumerate and threshold value is arranged multistage method.Multiple threshold values such as can
Enough enumerate: be used for always refusing the threshold value (hereinafter referred to as " upper limit threshold ") of the registration of processing scheme；With in order to execution etc.
Gas ions processes and allows the registration of processing scheme, but the operator's prompting to lining treatment system 10 has generation window component 22
The dangerous threshold value (hereinafter referred to as " usual threshold value ") of damage.When prediction arrival temperature difference Δ T1 is more than upper limit threshold,
Process as the situation of Fig. 5 (b), when prediction arrival temperature difference Δ T1 is less than usual threshold value, as the situation of Fig. 5 (c)
Process.
It is more than usual threshold value and during less than upper limit threshold when prediction arrives temperature difference Δ T1, the process number to substrate G
System limit is set so that processing scheme is able to carry out, and this restriction number is shown in operation screen, can be with structure it addition, control device 100
Become volitional check number in the case of performing this processing scheme.Thus, as shown in Fig. 5 (b), (c), whenever substrate G's
When processing number increase, temperature difference (TP1-TP2) becomes big, therefore, even if prediction arrives temperature difference Δ T1 and exceedes usual threshold value
In the case of result, in the temperature difference a certain number of scope less than usual threshold value, it is also possible to avoid the damage of window component 22
Bad.Equally, even if in the case of prediction arrival temperature difference Δ T1 is more than upper limit threshold, in temperature difference less than usual threshold value
The process number of substrate G is limited, it is possible to so that processing scheme is able to carry out in a certain number of scope.
By limiting process number in the manner described above, it is possible to avoid the damage of window component 22, and expand registrable place
Reason aspects.The number of the carried out Cement Composite Treated by Plasma in the case of Gai, can be by asking for prediction arrival temperature difference
The temperature difference estimation safety coefficient of temperature prediction point P1, P2 of obtaining during Δ T1 is set.
So far, the prediction between 2 points based on temperature prediction point P1, P2 is arrived temperature difference Δ T1 and avoid window component 22
The mode damaged is illustrated, then, on the basis of temperature prediction point P1, P2, such as at the edge part of window component 22
Design temperature future position P3, avoids the mode of the damage of window component 22 to illustrate.
In the case of design temperature future position P1～P3, processing scheme based on input, at temperature prediction point P1, P2
On the basis of prediction between 2 points arrives temperature difference Δ T1 (first is poor), pre-between 2 points of calculating temperature prediction point P1, P3
Measure and reach temperature difference Δ T2 (second is poor).Prediction is arrived temperature difference Δ T1 and sets threshold value TH1 (first threshold), it is judged that predict
Reach temperature difference Δ T1 less than threshold value TH1.Equally, prediction is arrived temperature difference Δ T2 and sets threshold value TH2 (Second Threshold), sentence
It is less than threshold value TH2 that disconnected prediction arrives temperature difference Δ T2.As a result of which it is, it is less than threshold value TH1 to arrive temperature difference Δ T1 in prediction
And prediction arrive temperature difference Δ T2 less than threshold value TH2 in the case of allow processing scheme registration, beyond this in the case of do not permit
Permitted processing scheme registration.Thereby, it is possible to more reliably avoid the damage of window component 22.
In the case of design temperature future position P1～P3, prediction is arrived temperature difference Δ T1, Δ T2 sum setting threshold value
TH3 (the 3rd threshold value), it is judged that prediction arrival temperature difference Δ T1, Δ T2 sum are less than threshold value TH3, arrive temperature difference in prediction
In the case of Δ T1, Δ T2 sum are less than threshold value TH3, it is allowed to processing scheme is registered.It addition, temperature prediction point could be arranged to ratio
3 points are many, and judgement maneuver now is with reference to the situation of 3 points.With because of the window component 22 caused from the heat absorption of plasma
The deformation of window component 22 of thermal expansion dimensionally produce, therefore can avoid window portion more reliably by increasing temperature prediction point
The damage of part 22.
Above, use above-mentioned embodiment to describe the present invention, but the invention is not restricted to above-mentioned embodiment.
The most in the above-described embodiment, illustrate that the damage of window component 22 avoids program be stored in control device 100 and filled by control
Put the mode of 100 execution.To this, the purpose of the present invention is accomplished in that to have record and realizes above-mentioned embodiment
The storage medium of the program coding of the software of function is supplied to control device 100, and the microcomputer 101 controlling device 100 is read
Take the program coding of storage in storage medium to perform.
In this case, realizing the function of above-mentioned embodiment from the program coding self of storage medium reading, program is compiled
The storage medium of code and this program coding of storage constitutes the present invention.As the storage medium for supplying program coding, such as can
Enough store RAM, NV-RAM, floppy disk (registered trade mark), hard disk, photomagneto disk, CD-ROM, CD-R, CD-RW, DVD (DVD-ROM,
DVD-RAM, DVD-RW, DVD+RW) etc. CD, disk, non-volatile storage card, other ROM etc. said procedure compile
Code.Or, above-mentioned upper program coding can pass through from the Internet, commercial network or not shown with what LAN etc. was connected
Other computer and database download and be supplied to control device 100.
Furthermore it is possible to performing the damage of window component 22 and keeping away on the common personal computer controlled outside device 100
Exempt from program.Program is avoided and the program of the processing scheme that can input Cement Composite Treated by Plasma for example with the damage making window component 22
(software) is mutually related structure or make the structure of they integrations.And, the operator of lining treatment system 10 is individual
Processing scheme input program, input processing scheme is started on computer.When the end of input of processing scheme, it is used for avoiding window portion
The program of the damage of part 22 is executed quickly, it is judged that whether the processing scheme of input is the place that can be registered in and control device 100
Reason scheme.Operator can arrange and only can input identical place to controlling device 100 in the case of being judged as registering
The rule of reason scheme.
Further, as the plasma processing apparatus 11 of the present invention, it is possible to enumerate the plasma-etching apparatus of substrate, but
It is not limited to this, it is also possible to for other plasma processing apparatus of film formation device, cineration device, ion implantation apparatus etc..
It addition, list the glass substrate of FPD as substrate G, even if being other substrate (such as semiconductor wafer), it is also possible to
It is applied to the present invention.
Claims (9)
1. a plasma processing apparatus, its plasma generating area in chamber produces inductively coupled plasma,
Thus the substrate being accommodated in described chamber is implemented Cement Composite Treated by Plasma, this plasma processing apparatus is characterised by, bag
Include:
Described inductively coupled plasma is made to result from the inductive coupling antenna of described plasma generating area；
It is arranged in the window component between described plasma generating area and described inductive coupling antenna；With
Control the control portion to the Cement Composite Treated by Plasma that described substrate performs,
Described control portion includes:
Store the storage part of the processing scheme to the Cement Composite Treated by Plasma that described substrate performs；
Enforcement division, it, according to being stored in the processing scheme of described storage part, performs Cement Composite Treated by Plasma to described substrate；
Input unit, it receives the input of the processing scheme to the Cement Composite Treated by Plasma that described substrate performs；
Judging part, it is when the processing scheme received according to described input unit performs Cement Composite Treated by Plasma, it is judged that described window
Whether parts are damaged；With
Register, it is in the case of described judging part judges that described window component is damaged, and described processing scheme is stepped on by refusal
Note is to described storage part, in the case of described judging part judges that described window component is not damaged, by described processing scheme
It is registered in described storage part.
2. plasma processing apparatus as claimed in claim 1, it is characterised in that:
Described window component is formed by electrolyte,
Described judging part judges whether described electrolyte is damaged.
3. plasma processing apparatus as claimed in claim 1, it is characterised in that:
Described window component has electrolyte and is arranged on the dielectric cap of side, described dielectric described plasma generating area,
Described judging part judges whether described dielectric cap is damaged.
4. plasma processing apparatus as claimed in claim 1, it is characterised in that:
Described window component has metal and the dielectric cap of the side, described plasma generating area being arranged on described metal,
Described judging part judges whether described dielectric cap is damaged.
5. the plasma processing apparatus as according to any one of Claims 1-4, it is characterised in that:
Described judging part, the processing scheme for receiving according to described input unit repeatedly performs Cement Composite Treated by Plasma and makes described
When the temperature of window component becomes poised state, be arranged at described window component multiple temperature prediction points predictions arrive temperature it
Difference, uses predetermined calculating formula to calculate, in the case of described difference is less than the threshold value of regulation, it is judged that described window component
It is not damaged.
6. plasma processing apparatus as claimed in claim 5, it is characterised in that:
The plurality of temperature prediction point at least includes 1 point and the week of described window component of the underface of described inductive coupling antenna
1 point of edge.
7. plasma processing apparatus as claimed in claim 5, it is characterised in that:
The plurality of temperature prediction point at least includes 1 point and the week of described window component of the underface of described inductive coupling antenna
2 points of edge,
Described judging part calculates the prediction of 1 point of the underface of described inductive coupling antenna and arrives temperature and described window component
The first difference that the respective prediction of 2 points of circumference arrives temperature is poor with second, in described first difference and institute less than first threshold
State second difference less than Second Threshold in the case of, it is judged that described window component is not damaged.
8. plasma processing apparatus as claimed in claim 5, it is characterised in that:
The plurality of temperature prediction point at least includes 1 point and the week of described window component of the underface of described inductive coupling antenna
2 points of edge,
Described judging part calculates the prediction of 1 point of the underface of described inductive coupling antenna and arrives temperature and described window component
The first difference that the respective prediction of 2 points of circumference arrives temperature is poor with second, in described first difference and described second difference sum
In the case of less than the 3rd threshold value, it is judged that described window component is not damaged.
9. a control method for plasma processing apparatus, described plasma processing apparatus plasma in chamber is raw
Become region to produce inductively coupled plasma, thus the substrate being accommodated in described chamber is implemented Cement Composite Treated by Plasma, described
The control method of plasma processing apparatus is characterised by, including:
Input step, receives the input of the processing scheme to the Cement Composite Treated by Plasma that described substrate performs；With
Judge step, when performing Cement Composite Treated by Plasma according to described processing scheme, it is judged that be arranged in described plasma raw
Whether the electrolyte becoming the window component between region and described inductive coupling antenna to be comprised is damaged；
Register step, in the case of being judged that described window component is damaged by described judgement step, not by described process side
Case is registered in described storage part, in the case of judging that described window component is not damaged, described processing scheme is registered
To described storage part；With
Perform step, come described substrate execution etc. in the processing scheme that described storage part is registered according to by described register step
Gas ions processes,
In described judgement step, make described window component for repeatedly performing Cement Composite Treated by Plasma according to described processing scheme
Predictions when temperature becomes poised state, multiple temperature prediction points that be arranged at described window component arrive temperature difference, use
Predetermined calculating formula calculates, in the case of described difference is less than the threshold value of regulation, it is judged that described window component is not sent out
Raw damage.
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| JP2001085398A (en) * | 1999-09-13 | 2001-03-30 | Kobe Steel Ltd | Plasma treatment apparatus |
| CN1811622A (en) * | 2005-01-19 | 2006-08-02 | 东京毅力科创株式会社 | Method of inspecting substrate processing apparatus, and storage medium storing inspection program for executing the method |
| CN101925883A (en) * | 2008-01-28 | 2010-12-22 | 东京毅力科创株式会社 | Program test device and program |
| JP2015022855A (en) * | 2013-07-18 | 2015-02-02 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus |
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| US6666982B2 (en) | 2001-10-22 | 2003-12-23 | Tokyo Electron Limited | Protection of dielectric window in inductively coupled plasma generation |
| JP4365109B2 (en) * | 2003-01-29 | 2009-11-18 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
| JP2009193741A (en) | 2008-02-13 | 2009-08-27 | Sekisui Chem Co Ltd | Plasma processing device |
| JP2009161862A (en) * | 2009-03-19 | 2009-07-23 | Canon Anelva Corp | Plasma treatment apparatus |
| JP2011134889A (en) * | 2009-12-24 | 2011-07-07 | Canon Anelva Corp | Treatment setting support device and method of setting treatment condition |
| JP5582816B2 (en) * | 2010-02-19 | 2014-09-03 | 東京エレクトロン株式会社 | Cover fixture and inductively coupled plasma processing apparatus |
| KR101574740B1 (en) * | 2013-08-28 | 2015-12-04 | (주)젠 | Plasma apparatus for vapor phase etching and cleaning |
| JP2015109184A (en) * | 2013-12-04 | 2015-06-11 | 株式会社島津製作所 | Surface wave plasma source and surface wave excitation plasma film deposition apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2001085398A (en) * | 1999-09-13 | 2001-03-30 | Kobe Steel Ltd | Plasma treatment apparatus |
| CN1811622A (en) * | 2005-01-19 | 2006-08-02 | 东京毅力科创株式会社 | Method of inspecting substrate processing apparatus, and storage medium storing inspection program for executing the method |
| CN101925883A (en) * | 2008-01-28 | 2010-12-22 | 东京毅力科创株式会社 | Program test device and program |
| JP2015022855A (en) * | 2013-07-18 | 2015-02-02 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus |
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