KR20160141830A - Sputtering arrangement for sputtering a material on a substrate surface - Google Patents

Abstract

There is provided a sputtering arrangement for sputtering a material on a substrate surface. The sputtering arrangement comprises at least one sputtering cathode-sputtering cathode having a first end portion and a second end portion extending along a first axis, arranged to support the substrate and opposite to the at least one sputtering cathode Wherein at least one substrate support-substrate support extends along a second axis and the second axis forms a first angle with the first axis, and at least one sputtering cathode, particularly a first end portion and / And at least one actuation device connectable to the two end portions. The at least one actuation device is configured to change the first angle, especially during the sputtering process.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a sputtering arrangement for sputtering a material on a substrate surface.

[0001] Embodiments of the disclosure relate to a sputtering arrangement for sputtering material on a substrate surface, and a method for sputtering material on a substrate surface.

[0002] The processing of flexible substrates such as plastic films or foils has a high demand in the packaging industry, semiconductor industries and other industries. The processing may consist of coating, etching, and other processing steps performed on the substrate for the desired applications, using the desired materials, e.g., metals, semiconductors and dielectric materials. Systems that perform this task generally include a coating drum, e.g., a cylindrical roller, coupled to the processing system for transporting the substrate, on which at least a portion of the substrate is processed. Methods for depositing material on a substrate include sputtering processes. Typically, a sputtering process is performed in a vacuum chamber-the substrate is positioned in a vacuum chamber, and involves ejecting material from the target, which is the source, onto the substrate surface.

[0003] The uniformity of the thickness of the layers to be coated depends, inter alia, on the distance between the source and the substrate. New products that are produced using vacuum coating systems, such as optical applications (e.g., window-film, antireflective coatings) on substrates, using different materials, . Also, because of the increased substrate width (e.g., up to 3000 mm), it is difficult to meet the given uniformity requirements.

[0004]  In view of the foregoing, there is a need for new sputtering arrangements and methods of operating such arrangements that overcome at least some of the problems in the art.

[0005] In view of the above, there is provided a sputtering arrangement for sputtering a material on a substrate surface, and a method for sputtering material on a substrate surface. Additional aspects, advantages, and features of the disclosure are apparent from the claims, the description, and the accompanying drawings.

[0006] According to one aspect, a sputtering arrangement for sputtering a material on a substrate surface is provided. The sputtering arrangement comprises at least one sputtering cathode-sputtering cathode having a first end portion and a second end portion extending along a first axis, arranged to support the substrate and opposite to the at least one sputtering cathode Wherein at least one substrate support-substrate support extends along a second axis and the second axis forms a first angle with the first axis, and at least one sputtering cathode, particularly a first end portion and / And at least one actuation device connectable to the two end portions. The at least one actuation device is configured to change the first angle, especially during the sputtering process.

[0007] According to another aspect, a method for sputtering a material on a substrate surface using a sputtering arrangement having at least one sputtering cathode-sputtering cathode having a first end portion and a second end portion extending along a first axis / RTI > The method includes changing the orientation of the first axis during the sputtering process.

[0008] According to yet another aspect, a method is provided for sputtering material onto a substrate surface using a sputtering array. The sputtering arrangement comprises at least one sputtering cathode-sputtering cathode having a first end portion and a second end portion extending along a first axis, arranged to support the substrate and opposite to the at least one sputtering cathode Wherein at least one substrate support-substrate support extends along a second axis and the second axis forms a first angle with the first axis, and at least one sputtering cathode, particularly a first end portion and / And at least one actuation device connectable to the two end portions. The at least one actuation device is configured to change the first angle, especially during the sputtering process. The method includes changing the orientation of the first axis during the sputtering process, and changing the orientation of the first axis provides for changing the first angle.

[0009] Embodiments also relate to devices for performing the disclosed methods and include device parts for performing each of the described method steps. These method steps may be performed by hardware components, by a computer programmed by appropriate software, by any combination of the two, or in any other manner. In addition, embodiments in accordance with the present invention also relate to methods of operating the described arrangement. The method includes method steps for performing all functions of the arrangement.

[0010] In the manner in which the recited features of the disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the present disclosure and are described below.
Figure 1 shows a side cross-sectional view of a sputtering arrangement for use in the embodiments described herein;
Figure 2a shows a front cross-sectional view of the sputtering cathodes and coating drum of Figure 1;
Figure 2b shows a plan cross-sectional view of the sputtering cathodes, the recipient plate, and the coating drum of Figure 1;
Figure 3a shows a side cross-sectional view of another sputtering arrangement for use in the embodiments described herein;
Figure 3b shows a plan cross-sectional view of the sputtering cathodes, the receiving plate, and the coating drum of Figure 3a;
Figure 4 shows a side cross-sectional view of a sputtering arrangement according to embodiments described herein;
Figure 5 illustrates a first axis and a second axis, defining a first angle, according to embodiments disclosed herein;
Figure 6 shows a planar cross-sectional view of the sputtering arrangement of Figure 4, in accordance with the embodiments described herein;
Figure 7a shows a side cross-sectional view of another sputtering arrangement;
Figure 7b shows another side cross-sectional view of the sputtering arrangement of Figure 7a;
Figure 8 shows a side cross-sectional view of a sputtering arrangement in accordance with embodiments described herein;
Figure 9 shows a front cross-sectional view of a sputtering arrangement comprising a plurality of coating drums for web coating, according to embodiments described herein; And
10 shows a flow diagram of a method for sputtering a material on a substrate surface, according to embodiments described herein.

[0011] Reference will now be made in detail to the various embodiments of the disclosure, and examples of one or more of the various embodiments are illustrated in the drawings. In the following description of the drawings, like reference numerals refer to like components. In general, only differences for the individual embodiments are described. Each example is provided as a description of the disclosure and is not meant as a limitation of the disclosure. Further, the features illustrated or described as part of one embodiment may be used with other embodiments, or may be used for other embodiments, to create further embodiments. The detailed description is intended to cover such modifications and variations.

[0012] Figure 1 shows a side view of a dissempled state of a sputtering arrangement 10 for use in the embodiments described herein. The sputtering arrangement 10 has a vacuum chamber 11 and a coating drum 12. The coating drum 12 is disposed in the vacuum chamber 11 and is configured to support a substrate (not shown) to be coated. According to some embodiments, a plurality of sputtering cathodes 16 of the sputtering array 10 are attached to the holding device 14, and the holding device can also be referred to as a "receiving plate ". As shown in FIG. 1, the sputtering cathodes 16 and the holding device 14 can be configured as a cantilever arrangement. The holding device 14 to which the sputtering cathodes 16 are attached may be provided on the transport device 15. [ In order to assemble the sputtering arrangement 10, the sputtering cathodes 16 are moved into the vacuum chamber 11 through the openings of the vacuum chamber 11. The sputtering cathodes 16 are positioned in the vacuum chamber 11 to surround the coating drum 12, as shown in the front cross-sectional view of Figure 2a and the planar cross-sectional view of Figure 2b. The accommodating plate 14 can seal the opening of the vacuum chamber 11 in an air-tight manner.

[0013] In some implementations, an assembly comprising sputtering cathodes 16, a coating drum 12, and optionally transporting means for transporting the additional elements, e.g., the holding device 14 and / or the flexible substrate, , And can be provided movably with respect to the vacuum chamber 11. By way of example, the sputtering cathode 16 and the coating drum 12 may be provided as an entity that can be moved into and out of the vacuum chamber 11.

[0014] According to some embodiments that may be combined with other embodiments described herein, a sputtering arrangement is configured to be coupled to a vacuum chamber 11 and configured to pump out the vacuum chamber 11 One or more pumps (not shown). One or more pumps can be made to create a medium for the high vacuums inside the vacuum chamber 11. For example, the vacuum inside the vacuum chamber 11 can be anywhere from 10 ^-1 mbar to 10 ^-7 mbar, in particular from 10 ^-2 mbar to 10 ^-6 mbar, such as 10 ^-3 mbar.

[0015] 1, 2A and 2B, there is a case where the sputtering cathodes 16 and the coating drum 12 are arranged in parallel, that is, the ideal distance between the sputtering cathodes 16 and the coating drum 12 is constant Respectively. However, in actual systems such as those shown in Figures 3a and 3b, due to the lever arm and gravity resulting, in particular, from the single-sided attachment of the sputtering cathodes 16 to the receiving plate 14, The plates and / or sputtering cathodes 16 are bended. Such deflection results in a non-equilibrium configuration of the sputtering cathodes 16 and the coating drum 12, as shown in Figure 3B.

[0016] The warping of the sputtering cathodes 16 may be different in different situations (e.g., in a degraded state and in an assembled state due to mechanical stresses), for example, May vary during venting and pumping, particularly depending on the position of the electrode. The warpage may be more variable during the sputtering process, for example due to thermal expansion. Such deflection leads to non-uniformity in the thickness of the layers being coated. By way of example, a non-parallel configuration of about 4 mm between the sputtering cathodes 16 and the coating drum 12 can affect about 2% of the uniformity.

[0017] The present disclosure provides a sputtering arrangement for sputtering a material on a substrate surface, in particular allowing for compensation for warping of the sputtering cathodes and / or the holding device.

[0018] According to one aspect, a sputtering arrangement for sputtering a material on a substrate surface is provided. The sputtering arrangement comprising: at least one sputtering cathode-sputtering cathode having a first end portion and a second end portion extending along a first axis; at least one sputtering cathode configured to support the substrate and arranged opposite the at least one sputtering cathode; Wherein the substrate support-substrate support portion of the first substrate extends along a second axis and the second axis forms a first angle with the first axis, and wherein at least one of the sputtering cathodes, particularly the first end portion and / And at least one actuation device connectable to the end portion. The at least one actuation device is configured to change the first angle, especially during the sputtering process.

[0019] Thus, the present disclosure provides a method and apparatus for in-situ (e.g., under vacuum) control of the angle between the sputtering cathodes and the substrate support to increase the uniformity of the thickness of the material layer being coated on the substrate surface . In particular, the present disclosure allows in-situ (e.g., under vacuum) conditioning and also automated distance adjustment between coating sources and substrates to achieve the best possible thickness uniformities.

[0020] The present disclosure provides the following beneficial effects. Sputtering arrangements can be used for various types of vacuum systems, particularly various types of vacuum deposition systems or coaters. In addition, various types of coating materials can be used, as well as various types of electrodes (e.g., cathodes), such as rotatable, planar, MF, and DC electrodes. The performance of a sputtering arrangement or system with respect to quality, such as thickness-uniformity of the material being coated, is independent of the movement of the electrodes during, for example, evacuation and pumping of the vacuum chamber. The uniformity can be adjusted in-situ without venting, for example before and / or during the sputtering process. The present disclosure further provides compensation for deflection of the holding device such as a receiving plate and compensation for the shrinkage of the electrodes themselves, for example compensating for deflection of the electrodes during the life of the target due to weight changes of the target to provide. Also, according to the uniformity requirements, no openings are required for shaping the deposition profile. With regard to control, automated closed loop control or adjustment is possible, for example, using an integrated uniformity measurement system.

[0021] 4 shows a side cross-sectional view of the sputtering arrangement 20 in its exploded state, according to embodiments described herein. Figure 5 shows a first axis and a second axis, defining a first angle, according to embodiments disclosed herein.

[0022] The sputtering arrangement 20 includes at least one sputtering cathode 25 having a first end portion 26 and a second end portion 27. Each sputtering cathode 25 extends along a respective first axis 28. Although three sputtering cathodes 25 are shown in the example of FIG. 4, any suitable number, such as 1, 2, 4, or 6 sputtering cathodes 25, may be provided.

[0023] The at least one substrate support 22 is configured to support a substrate (not shown) and is arranged face-to-face with or against at least one sputtering cathode 25. Typically, the substrate support 22 is arranged in a vacuum chamber 21. In some embodiments, the substrate support 22 may be a coating drum. The substrate support 22 extends along the second axis 23. As shown in FIG. 5, the second axis 23 forms each first angle 29 with each of the first axes 28.

[0024] According to some embodiments that may be combined with other embodiments described herein, a sputtering arrangement 20 includes a vacuum chamber 21 and a vacuum chamber 21, Or more pumps (not shown). One or more of the pumps may be configured to produce a medium for the high vacuum inside the vacuum chamber 21. For example, the vacuum inside the vacuum chamber 21 can be anywhere from 10 ^-1 mbar to 10 ^-7 mbar, in particular from 10 ^-2 mbar to 10 ^-6 mbar, such as 10 ^-3 mbar in particular.

[0025] According to some embodiments that may be combined with other embodiments described herein, the first angle may be any angle formed between the first axis and the second axis. In some embodiments, the first angle may be an angle defined by the inclination of the first axis relative to the second axis. For example, the two axes define four angles therebetween, and these four angles are arranged in a three-dimensional coordinate system or reference system, i.e. in one plane that can be arbitrarily oriented in space exist. The two pairs are formed by four angles, each pair comprising two identical angles. The first angle can be any one of angles in one plane, i.e., an arbitrarily oriented plane.

[0026] 4, the first angle 29 is an angle defined by a tilt of the first axis 28 with respect to the second axis 23 in a vertical direction (i.e., a direction parallel to gravity). In another example, the first angle 29 may be an angle defined in the horizontal direction (i.e., the direction perpendicular to gravity) by the orientation of the first axis 28 relative to the second axis 23. However, the first angle is not limited to vertical and horizontal directions, but can be defined in any direction in three-dimensional space.

[0027] At least one actuation device (30) is connectable to at least one sputtering cathode (25). In some embodiments, at least one actuating device 30 is connectable to the first end portion 26 and / or the second end portion 27. The at least one actuation device 30 is configured to change the first angle 29, particularly during the sputtering process. In some embodiments, at least one actuation device 30 may be configured to change the orientation of the first axis 28 relative to the second axis 23, and thereby change the first angle 29 have. By varying the first angle in-situ (e.g., under vacuum), the change in the first angle 29 caused by, for example, the warping of the sputtering cathode 25 due to thermal expansion and / Can be compensated for, thereby increasing the uniformity of the thickness of the material layer coated on the substrate. According to some embodiments that may be combined with other embodiments disclosed herein, the actuation device 30 is provided in a vacuum chamber 21.

[0028] According to some embodiments that may be combined with other embodiments described herein, at least one actuation device 30 may be configured to change or adjust the first angle 29 to be substantially zero degrees Lt; / RTI > This can correspond to a parallel configuration of the first axis 28 and the second axis 23. In other embodiments, at least one actuation device 30 may be configured to change or adjust the first angle 29 to a first value. The first value may be a predetermined value, or may be a value that is determined and / or adapted in real time, e.g., during the sputtering process. The first value can be calculated or determined based on at least one process parameter of the sputtering process, e.g., layer thickness of the material sputtered on the substrate surface, vacuum parameters, sputtering material and / or process power .

[0029] According to some embodiments that may be combined with other embodiments described herein, the actuation device 30 is connectable to the second end portion 27. By way of example, the first end portion 26 can be fixed in position and the second end portion 27 can be moved by the actuation device 30 connected to the second end portion 27 Possibly or displacable. ≪ RTI ID = 0.0 >

[0030] According to some embodiments that may be combined with other embodiments described herein, the at least one actuation device 30 may be connectable to an intermediate portion of the at least one sputtering cathode 25. The term "intermediate portion" as used herein may refer to any portion of the at least one sputtering cathode 25 between the first end portion 26 and the second end portion 27.

[0031] In some embodiments, which may be combined with other embodiments described in the actuary, a single actuation device 30 is provided in the sputtering cathode 25. That is, the sputtering cathode 25 may have one actuation device 30 coupled to the sputtering cathode 25. This may be the case when the first end portion 26 of the sputtering cathode 25 is fixed to the holding device 24, for example, the receiving plate. The second end portion 27 may then be connectable to each actuation device 30. [ In some embodiments, a single actuation device 30 may be provided in each of the sputtering cathodes 25, i. E., The number of actuation devices 30 is equal to the number of sputtering cathodes 25 can do. In such a case, each of the first angles 29 can be controlled or adjusted independently and / or independently from each other.

[0032] In some embodiments, which may be combined with other embodiments described herein, two actuation devices 30 may be provided in the sputtering cathode 25. That is, the sputtering cathode 25 may have two actuation devices 30 coupled to the sputtering cathode 25. [ This may be the case when one actuating device 30 is connectable to the first end portion 26 and another actuating device 30 is connectable to the second end portion 27. [ In some embodiments, actuation devices 30 can be provided in each of the sputtering cathodes 25, i.e., the number of actuation devices 30 is twice the number of sputtering cathodes 25 . In such a case, each of the first angles 29 can be controlled or adjusted independently and / or independently from each other.

[0033] As mentioned above, according to some embodiments, the sputtering arrangement 20 can include two actuation devices 30, one actuation device 30 having a first end portion 26 And the other actuation device 30 may be connectable to the second end portion 27. In this case, In such a case, the first end portion 26 may not be fixed in position and may be movable by another actuation device 30 which is connected to the first end portion 26. In some embodiments, the first end portion 26 may be connected to the holding device 24 via another actuation device 30. [ By moving the second end portion 27 and the first end portion 26 relative to each other, the first angle 29 between the first axis 28 and the second axis 23 is changed . In this example, to change the first angle 29, the first end portion 26 may be moved while the second end portion 27 is not moved or secured in place, The first end portion 26 may not be moved while the end portion 27 is moved or fixed in place or the first end portion 26 and the second end portion 27 may both be relatively free And can be relatively moved relative to each other at the same time.

[0034] It should be understood that this disclosure is not limited to the configurations described above and that any number of actuation devices may be provided to couple to at least a portion of the first and / or second end portions.

[0035] According to some embodiments that may be combined with other embodiments described herein, the holding device 24 may be configured to hold at least one sputtering cathode 25. [ As an example, at least one sputtering cathode 25 may be connected to the holding device 24 or may be fixed. Typically, the holding device 25 may be a plate, in particular a receiving plate. In the exemplary embodiments, the first end portion 26 may be secured to or attached to the holding device 24. [ For example, the first end portion 26 may be connected to the holding device 24 to be secured in place, and the second end portion 27 may be connected to at least one actuation device 24, (Not shown). By moving the second end portion 27 while the first end portion 26 is fixed in position, a first angle 29 between the first axis 28 and the second axis 23 can be changed.

[0036] In some embodiments, at least one sputtering cathode 25 may be moved into the vacuum chamber 21 through the openings of the vacuum chamber 21, in order to assemble the sputtering arrangement 20. In the vacuum chamber 21, at least one sputtering cathode 25 can be positioned to at least partially surround the substrate support 22. [ During or after positioning of the at least one sputtering cathode 25 in the vacuum chamber 21, the at least one sputtering cathode 25 is applied to at least one actuation device 30, for example, manually or automatically Can be connected. At least one of the two or more sputtering cathodes 25 may be connectable to at least one actuation device 30 when the sputtering arrangement 20 has two or more sputtering cathodes 25 have. In some embodiments, all of the sputtering cathodes 25 may be connectable to at least one actuation device 30. Then, the vacuum chamber 21 can be hermetically sealed so that a vacuum can be generated in the vacuum chamber 21. [ As an example, the holding device 24 may be configured to seal the opening-sputtering cathode 25 inserted into the vacuum chamber 21 through the opening.

[0037] In some implementations, an assembly including sputtering cathodes 25, a substrate support 22, and optionally transport elements for transporting the additional elements, e.g., the holding device 24 and / , And can be provided movably with respect to the vacuum chamber 21. By way of example, the sputtering cathode 25 and the substrate support 21 can be provided as an entity that can be moved into and out of the vacuum chamber 21.

[0038] According to some embodiments that may be combined with other embodiments described herein, the at least one sputtering cathode 25 is a planar sputtering cathode or a rotatable sputtering cathode. If the sputtering cathode 25 is a rotatable sputtering cathode, the first axis 28 may be the axis of rotation of the rotating sputtering cathode.

[0039] According to some embodiments that may be combined with other embodiments described herein, the at least one substrate support 22 may be cylindrical, and in particular may be a coating drum. By way of example, the second axis 23 may be the axis of rotation of the cylindrical substrate support, and in particular may be the axis of rotation of the coating drum.

[0040] In typical embodiments, the sputtering arrangement 20 can include more than one sputtering cathode 25. [ Each of the sputtering cathodes 25 may form a respective first angle 29 with the second axis 23 of the substrate support 22. The at least one actuation device 30 may be configured to change the first angle (s) of the cathode (s) having the greatest tendency to at least one of these first angles 29, e.g., have.

[0041] Figure 6 shows a planar cross sectional view of the assembled state of the sputtering arrangement 20 of Figure 4, in accordance with the embodiments described herein.

[0042] In the example of FIG. 6, two sputtering cathodes 25 are shown. Each actuation device 30, 30 'is connected to a respective second end portion thereof. The actuation device 30, 30 'may comprise an adjustment unit 31, 31', respectively.

[0043] The control unit 31, 31 'may include at least one of a motor, a stepper motor, a linear motor, a mechanical control unit, a pneumatic control unit, and a hydraulic control unit. The mechanical conditioning unit may include a feed through through the wall of the vacuum chamber 21. [ Thus, the mechanical conditioning unit 21 can be controllable from the outside of the vacuum chamber 21, and in particular, can be manually controlled.

[0044] In some embodiments, a connecting device 32, 32 'may be provided for connecting the second end portion to the regulating unit 31, 31'. The connecting device 32, 32 'can be configured such that the connection with the second end portion is established when the sputtering cathode 25 is inserted or moved into the vacuum chamber 21. However, in some embodiments, a connecting device may not be provided, and the regulating unit 31, 31 'may be directly connected to the second end portion of the sputtering cathode 25.

[0045] The at least one actuation device (30, 30 ') is configured to change the first angle, especially during the sputtering process. By varying the first angle in-situ (e.g., under vacuum), changes in the first angle caused by bending of the sputtering cathodes due to, for example, thermal expansion or mechanical stress can be compensated, , The uniformity of the thickness of the material layer coated on the substrate is increased. In Figure 8, the actuation devices 30, 30 'are provided in a vacuum chamber 21.

[0046] According to some embodiments, the sputtering cathodes 25 are mounted on a holding device or plate housing 24. Thus, the distances 292 and 294 between the substrate support 22 and the sputtering cathodes 25 can be fixed. The distances 291 and 293 between the substrate support 22 and the sputtering cathodes 25 at the loose or free ends of the sputtering cathodes 25 Pressure, cathode position, weight, warping of the sputtering cathode and / or the receiving plate, etc.). A system comprising at least one actuation device 30,30 may be integrated at the free or loose ends of each sputtering cathode 25 and the sputtering cathodes 25 and the substrate support 22 may be parallel In order to obtain one configuration, it may be done, for example, to move or warp the sputtering cathode 25 in such a way that the same distances 291 and 293 are obtained.

[0047] According to some embodiments that may be combined with other embodiments described herein, the actuation devices 30 and 30 'may include distances 291 and 293, respectively, with distances 292 and 294, Or to be the same. This may correspond to a parallel configuration of the substrate support 22 and the sputtering cathodes 25, i.e. a parallel configuration of the first and second axes 28 and 23. [ Such control may be performed in-situ and / or in real time during the sputtering process, e.g., based on at least one sputtering process parameter. The sputtering process parameters may include at least one parameter selected from the group consisting of layer thickness, vacuum parameters, sputtering material, and / or process power of the material sputtered on the substrate surface. This increases the uniformity of the thickness of the material layer coated on the substrate.

[0048] In other embodiments, the actuation devices 30, 30 'may be configured to change or adjust at least one of the distances 291 and 293 to a respective first value. The first value may be a predetermined value, or may be a value that is determined and / or adapted in real time, e.g., during the sputtering process. The first value may be calculated or determined based on at least one process parameter of the sputtering process, e.g., a layer thickness of a material sputtered on the substrate surface, a vacuum parameter, a sputtering material, and / or a process power. The first value of the distance 291 may be calculated or determined independently from the first value of the distance 293. Also, a single (i. E., Identical) first value may be used for both distances 291 and 293.

[0049] Such adjustment may be facilitated in situ without evacuating the system (vacuum chamber). Single layers can be driven by each cathode, and uniformity can be measured directly by an integrated optical measurement system. However, the disclosure is not limited to single layers, and an integrated optical measurement system can be made for multi-layer systems. With the data obtained by such a system, the necessary (positive) movement or deflection can be directly calculated and implemented. As described below, automatic closed loop control can also be implemented.

[0050] According to some embodiments that may be combined with other embodiments described herein, the sputtering arrangement 20 includes a controller (not shown) configured to control at least one actuation device 30 to adjust the first angle Not shown). As an example, a controller (not shown) may be configured to control the actuation device 30 to control the first angle 29 to change substantially to zero or to a first value as described above Lt; / RTI > By way of example, the first angle can be determined and / or made in real time, e.g., during the sputtering process.

[0051] In some embodiments, the controller may be configured to control the at least one actuation device 30 to adjust the first angle based on one or more sputtering process parameters. By way of example, the sputtering process parameters may include at least one of a layer thickness, a vacuum parameter, a sputtering material, and a process power of the material sputtered on the substrate surface. In order to measure the layer thickness of the material sputtered on the substrate surface, the sputtering arrangement or the sputtering arrangement may comprise an integrated uniformity measurement system, in particular an in-situ uniformity measurement system.

[0052] Figures 7a, 7b, and 8 show sputtering arrangements for magnetron sputtering. Sputtering sources usually employ magnetrons that utilize strong electric and magnetic fields to confine charged plasma particles to, for example, a plasma cloud close to the surface of the sputter target.

[0053] 7A shows a sputtering arrangement 40 in an ideal case in which a symmetrical plasma cloud 43 is formed between the sputtering cathode 42 and the substrate support 44. Fig. The first end portion 45 of the sputtering cathode 42 may be attached to the holding device 41 while the second end portion 46 of the sputtering cathode 42 may be loose or free to form the cantilever system . A spatially varying (non-homogenous) magnetic field may lead to a non-symmetrical plasma cloud 43 as shown in FIG. 7B. The non-symmetrical plasma cloud 43 may eventually affect the uniformity of the layers being coated. In particular, the layers to be coated may have poor uniformity.

[0054] Figure 8 shows a sputtering arrangement 50 according to embodiments described herein. The sputtering array 50 includes a substrate support 44 configured to support a substrate (not shown), a sputtering cathode 42 having a first end portion 45 and a second end portion 46. The first end portion 45 of the sputtering cathode 42 may be attached to the holding device 41 while the second end portion 46 of the sputtering cathode 42 may be loose or free to form the cantilever system . According to some embodiments, the sputtering cathode 42 extends along the first axis 47 and the substrate support 44 extends along the second axis 48. The first axis 47 and the second axis 48 form a first angle. That is, the first axis 47 and the second axis 48 are oriented relative to each other to form a first angle.

[0055] According to some embodiments that may be combined with other embodiments described herein, the first angle may be any angle formed between the first axis and the second axis. In particular, the first angle may be formed by two axes sharing a common endpoint, and the common endpoint may be the intersection of the first and second axes. By way of example, when two axes intersect at a point, four angles are formed. These angles are named in pairs according to their position relative to each other. A pair of mutually opposing angles formed by two intersecting axes are referred to as "vertical angles" or "opposite angles" or "vertically opposite angles. The angles are the same. In some embodiments, the first angle may be an angle defined by the slope of the first axis relative to the second axis.

[0056] 8, the first angle is an angle defined by a tilt of the first axis 47 with respect to the second axis 48 in a vertical direction (i.e., a direction parallel to gravity). In another example, the first angle may be an angle defined by the orientation of the first axis 47 relative to the second axis 48 in a horizontal direction (i.e., a direction perpendicular to gravity). However, the first angle is not limited to vertical and horizontal directions, but can be defined in any direction in three-dimensional space.

[0057] According to some embodiments of the disclosure, and as shown in FIG. 8, the sputtering arrangement 50 includes at least one actuation device 300 (not shown) connectable to a second end portion 46 of the sputtering cathode 42 ). The at least one actuating device 300 may be configured similar to the actuating device 30, 30 'described above and may in particular include an adjusting unit 310 and a connecting device 320. The description of the above given actuation device 30,30'and in particular the description of the control unit 31,31'and the connecting device 32,32'also includes the actuation device 300, ), And connecting device 320, and are therefore not repeated.

[0058] In exemplary embodiments, at least one actuation device 300 is configured to move the second end portion 46 while the first end portion 45 is substantially fixed in position, particularly during the sputtering process And can be configured to change the first angle by displacing it. At least one actuating device 300 may alter the orientation of the sputtering cathode 42 relative to the second axis 48 of the substrate support 44 and in particular the orientation of the first axis 47, (29).

[0059] In some embodiments, which may be combined with other embodiments described in the actuary, a single actuation device 300 is provided in the sputtering cathode 42. In some embodiments, which may be combined with other embodiments described herein, two actuation devices 300 may be provided in the sputtering cathode 42. That is, the sputtering cathode 42 may have two actuation devices 300 coupled to the sputtering cathode 42. For example, one actuation device 300 may be connectable to the first end portion 45, and the other actuation device 300 may be connectable to the second end portion 46.

[0060] According to some embodiments that may be combined with other embodiments described herein, at least one actuation device 300 may be connectable to an intermediate portion of the sputtering cathode 42. [ The term "intermediate portion " can refer to any portion of the sputtering cathode 42 between the first end portion 45 and the second end portion 46.

[0061] The sputtering arrangement 50 provides compensation for plasma non-uniformity by regulating or warping the orientation of the sputtering cathode 42. This increases the uniformity of the thickness of the material layer coated on the substrate.

[0062] FIG. 9 illustrates a thin film deposition system 1000 having sputtering arrangements in accordance with the embodiments described herein.

[0063] The thin film deposition system 1000 includes an unwinding station 110, a winding station 110 ', a first sputtering arrangement 120, and a second sputtering arrangement 130. The sputtering arrangements 120 and 130 each include a vacuum chamber that can be configured as a processing chamber. A load lock chamber 1010 may be provided between the unwinding station 110 and the first chamber 120. An additional load lock chamber 1010 may be provided between the laser scribing chamber 1020 and the winding station 110 '. The load lock chambers 1010 may each include a plurality of seal portions 1012 that may be closed while the flexible substrate 100 is being fed through the thin film deposition system 1000 or when the flexible substrate 100 is not present, . ≪ / RTI > Thereby, the winding station 110 and the unwinding station 110 'can be opened and the remaining system can have atmospheric pressure while being evacuated. The load lock chambers 1010 can also be used to provide an intermediate vacuum stage, for example, such that the pressure difference between the vacuum station of the winding station 110 and the first sputtering arrangement 120 can be increased.

[0064] The flexible substrate 100 may also be referred to as a "web ". The term "web" can in particular refer to any kind of flexible substrate. By way of example, the web may be any suitable band-shaped flexible material. Typical examples are foils.

[0065] For example, as shown in FIG. 9, the chambers and stations may separate the thin film deposition system 1000 into different regions. In this way, the separating means made for separating the regions can be provided on the basis of the concept of a flexible use module of different regions. According to some embodiments, a gas separation portion 163, a gas separation portion 1163, and / or a gas separation portion 1164 may be provided. This allows different processing atmospheres, e.g., different processing pressures, to be provided to different regions of the thin film deposition system 1000.

[0066] For example, the system may include regions 1110 of the winding and unwinding stations 110, 110 ', regions 1011 of the load lock chambers 1010, regions of the laser scribing chambers 1020 Cushion regions 1123 of the vacuum chambers of the sputtering arrangements 120 and 130, web guide regions 1122 of the vacuum chambers of the sputtering arrangements 120 and 130, The processing chambers 1121 and 1120 of the vacuum chambers of the arrays 120 and 130 are shown. Each of one or more of these regions may have different atmospheres, e.g., pressures. For example, gas insertion due to gas cushion regions can be separated by gas separation means to reduce the influence on other regions.

[0067] According to various embodiments that may be combined with other embodiments described herein, regions 1123 may have a pressure of 1 mbar to about 1 · 10 ^-2 mbar, while other regions May be vacuum evacuated at pressures of 1 · 10 ^-2 mbar to 1 · 10 ^-4 mbar during operation.

[0068] According to further embodiments, which may be combined with other embodiments described herein, a laser scribing chamber 1020 may be provided after each of the sputtering arrangements 120 and 130. Each of the laser scribing chambers 1020 includes equipment for laser processing the front surface of the flexible substrate 100. According to various embodiments, a laser 1022, one or more mirrors 1025, and / or at least one lens 1026 are provided in the laser scribing chambers 1020. The laser beam 1028 is directed onto the front surface of the flexible substrate 100, that is, the surface from which the thin film was deposited on top of the previous processing chamber 120.

[0069] According to some embodiments that may be combined with other embodiments described herein, the sputtering arrangement 120 includes two or more coating drums 61, 62, 63 configured to transport the web 100, And may include at least one sputtering cathode 64. In one embodiment, Although three coating drums 61, 62 and 63 are shown in the example of FIG. 9, this disclosure is not limited to such an example, and any suitable number of coating drums may be provided. As an example, two or four coating drums may be provided.

[0070] According to some embodiments, two or more coating drums 61, 62, 63 are disposed in parallel with a gap formed between two or more coating drums 61, 62, 63 . As an example, a first coating drum 61 and a second coating drum 62 may be provided and a gap is formed between the first coating drum 61 and the second coating drum 62. In some embodiments, at least one of the sputtering cathodes 64 may be positioned in a region that faces the gap. As a result, the deposition occurs in the region of the gap, i.e., the region where the web is free and not supported by the coating drums 61, 62, 63. This may also be referred to as "free span deposition ".

[0071] According to some embodiments, each sputtering cathode 64 extends along a respective first axis and the coating drums 61, 62, 63 extend along a respective second axis. The second axis may be the axis of rotation of each coating drum 61, 62, 63. The first and second axes form first angles. That is, the first and second axes are oriented relative to each other to form the first angles.

[0072] According to some embodiments of the disclosure, the sputtering arrangement 120 may have at least one actuation device (not shown) connectable to at least one of the sputtering cathodes 64. The at least one actuation device is configured to alter the orientation of the at least one sputtering cathode (64) for at least one of the coating drums (61, 62, 63) and thereby adjust the at least one first angle . The at least one actuation device may be configured similar to the actuation devices 30, 30 ', and 300 described above, and in particular, may include an adjustment unit and a connecting device. The description of the given actuating device 30, 30 ', and 300, and in particular the description of the adjusting unit and connecting device, is also applied to such an actuation device and is therefore not repeated.

[0073] According to some embodiments that may be combined with other embodiments described herein, the sputtering arrangement 130 may include any of the sputtering arrangements described in detail with respect to Figures 1-8, .

[0074] 10 shows a flow diagram of a method 80 for sputtering material onto a substrate surface, according to embodiments described herein.

[0075] A method for sputtering a material on a substrate surface utilizes a sputtering arrangement having at least one sputtering cathode-sputtering cathode having a first end portion and a second end portion extending along a first axis. The method includes changing the orientation of the first axis (block 81) during the sputtering process. The sputtering arrangement can be configured like any of the sputtering arrangements described above.

[0076] The sputtering arrangement as used in the method may further comprise at least one substrate support configured to support the substrate and arranged opposite the at least one sputtering cathode, the substrate support extending along the second axis, The two axes together with the first axis form a first angle. In the method, changing the orientation of the first axis may provide for changing the first angle. This increases the uniformity of the thickness of the material layer coated on the substrate.

[0077] According to some embodiments, which may be combined with other embodiments described herein, the method may include the steps of varying a first angle by closed-loop control, in particular based on at least one sputtering process parameter (82)). By way of example, the sputtering process parameters may include at least one process parameter selected from the group consisting of layer thickness of material sputtered on the substrate surface, vacuum parameters, sputtering material, and process power. In order to measure the layer thickness of the material sputtered on the substrate surface, the sputtering arrangement or the sputtering arrangement may comprise an integrated uniformity measurement system.

[0078] According to some embodiments, an integrated uniformity measurement system may be used to implement closed-loop control, particularly automatic closed-loop control. By way of example, using the data obtained by such a system, the necessary (positive) movement or deflection can be determined and executed, for example, to improve or suitably match the uniformity of the layers being coated.

[0079] The present disclosure allows in-situ (e.g., under vacuum) control of the angle between the sputtering cathodes and the substrate support to increase the uniformity of the thickness of the material layer coated on the substrate. In particular, the present disclosure allows in-situ (e.g., under vacuum) conditioning and also automated distance adjustment between coating sources and substrates to achieve the best possible thickness uniformities.

[0080] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure can be devised without departing from the basic scope thereof, and the scope of the disclosure is determined by the claims that follow.

Claims (15)

A sputtering arrangement for sputtering a material on a substrate surface,
At least one sputtering cathode having a first end portion and a second end portion, the sputtering cathode extending along a first axis,
At least one substrate support configured to support a substrate and arranged opposite to the at least one sputtering cathode, the substrate support extending along a second axis, the second axis having a first angle with the first axis, Lt; RTI ID = 0.0 >
At least one actuation device connectable to said at least one sputtering cathode, in particular said first end portion and / or said second end portion, said at least one actuation device being in particular a sputtering process, And configured to change the first angle.
A sputtering arrangement for sputtering a material on a substrate surface. The method according to claim 1,
Further comprising a holding device configured to hold the at least one sputtering cathode, wherein the first end portion is connected to the holding device,
A sputtering arrangement for sputtering a material on a substrate surface. 3. The method according to claim 1 or 2,
Wherein the first actuating device includes one actuating device connectable to the second end portion, or includes two actuating devices, one actuating device of the two actuating devices being connectable to the first end portion, Wherein another actuation device of the two actuation devices is connectable to the second end portion,
A sputtering arrangement for sputtering a material on a substrate surface. 4. The method according to any one of claims 1 to 3,
Wherein the at least one sputtering cathode is a planar sputtering cathode or a rotatable sputtering cathode and in particular the first axis is a rotating axis of the rotating sputtering cathode,
A sputtering arrangement for sputtering a material on a substrate surface. 5. The method according to any one of claims 1 to 4,
Wherein the at least one substrate support is a coating drum, and in particular, the second axis is a rotation axis of the coating drum,
A sputtering arrangement for sputtering a material on a substrate surface. 6. The method according to any one of claims 1 to 5,
A first rotatable substrate support having a gap formed between the first rotatable substrate support and the second rotatable substrate support for transporting at least one web, Comprising a substrate support,
A sputtering arrangement for sputtering a material on a substrate surface. 7. The method according to any one of claims 1 to 6,
Wherein the actuation device is configured to change the first angle to be substantially zero degrees,
A sputtering arrangement for sputtering a material on a substrate surface. 8. The method according to any one of claims 1 to 7,
Wherein the actuation device comprises at least one of a motor, a stepper motor, a linear motor, a mechanical control unit, a pneumatic control unit, and a hydraulic control unit.
A sputtering arrangement for sputtering a material on a substrate surface. 9. The method according to any one of claims 1 to 8,
Further comprising a controller configured to control the actuating device to adjust the first angle based on one or more sputtering process parameters,
A sputtering arrangement for sputtering a material on a substrate surface. 10. The method according to any one of claims 1 to 9,
Comprising at least two sputtering cathodes, in particular three or six sputtering cathodes,
A sputtering arrangement for sputtering a material on a substrate surface. 11. The method according to any one of claims 1 to 10,
Further comprising a vacuum chamber, wherein the substrate support and / or the at least one actuation device are provided in the vacuum chamber,
A sputtering arrangement for sputtering a material on a substrate surface. A method for sputtering material on a substrate surface using a sputtering arrangement having at least one sputtering cathode having a first end portion and a second end portion, the sputtering cathode extending along a first axis,
During the sputtering process, changing the orientation of the first axis,
A method for sputtering material on a substrate surface using a sputtering arrangement having at least one sputtering cathode having a first end portion and a second end portion, the sputtering cathode extending along a first axis. 13. The method of claim 12,
The sputtering arrangement comprises:
At least one substrate support configured to support a substrate and arranged opposite the at least one sputtering cathode, the substrate support extending along a second axis, the second axis forming a first angle with the first axis Further comprising:
Wherein changing the orientation of the first axis provides a change in the first angle,
A method for sputtering material on a substrate surface using a sputtering arrangement having at least one sputtering cathode having a first end portion and a second end portion, the sputtering cathode extending along a first axis. The method according to claim 12 or 13,
Further comprising changing the orientation of the first axis based on at least one sputtering process parameter, particularly by closed-loop control. ≪ RTI ID = 0.0 >
A method for sputtering material on a substrate surface using a sputtering arrangement having at least one sputtering cathode having a first end portion and a second end portion, the sputtering cathode extending along a first axis. 15. The method of claim 14,
Wherein the sputtering process parameters comprise at least one parameter selected from the group consisting of a layer thickness of a material sputtered on a substrate surface, a vacuum parameter, a sputtering material, and a process power,
A method for sputtering material on a substrate surface using a sputtering arrangement having at least one sputtering cathode having a first end portion and a second end portion, the sputtering cathode extending along a first axis.

Images