TWM638118U - A vacuum unit for producing multilayer interference coatings on an optical element - Google Patents
A vacuum unit for producing multilayer interference coatings on an optical element Download PDFInfo
- Publication number
- TWM638118U TWM638118U TW111203305U TW111203305U TWM638118U TW M638118 U TWM638118 U TW M638118U TW 111203305 U TW111203305 U TW 111203305U TW 111203305 U TW111203305 U TW 111203305U TW M638118 U TWM638118 U TW M638118U
- Authority
- TW
- Taiwan
- Prior art keywords
- optical element
- optical
- vacuum
- holder
- front surface
- Prior art date
Links
Images
Abstract
Description
所請求的技術解決方案是關於真空技術,特別是用於沉積薄膜多層光學塗層的真空裝置。該裝置可用於窄頻帶干涉濾光片(narrowband interference filter)的商業規模生產,該窄頻帶干涉濾光片可於天體物理研究中使用以獲得空間物體的單色圖像、可於基於多通道串列資料傳輸的光纖通訊網路中使用,該裝置可用於光學系統的生產,例如高反射鏡、具有陡峭前緣的分光器、包括具數百或以上層體組合在一起的多層薄膜塗層之其他產品。 The requested technical solution concerns vacuum technology, in particular vacuum devices for depositing thin-film multilayer optical coatings. The device can be used for commercial-scale production of narrowband interference filters, which can be used in astrophysics research to obtain monochromatic images of space objects. Used in optical fiber communication networks for serial data transmission, the device can be used in the production of optical systems, such as highly reflective mirrors, beam splitters with steep front edges, and others including multilayer thin film coatings with hundreds or more layers combined product.
已知一種用於在光學元件上產生多層干涉塗層的真空裝置[1],其中離子源指向一可替換的平坦矩形靶材的表面。離子源和靶材相對於彼此而固定在一移動裝置上,以便於它們在與該源的長輪廓垂直的方向中同時移動。為了提升塗層的均勻性,光學元件被安裝在一可旋轉夾持具中。同時,為了提升所產生的塗層的品質,該裝置使用指向該光學元件的一第二輔助離子源。其係用以平滑光學元件的表面並抑制隨著薄膜數量和塗層厚度增加而形成額外的粗糙度。其也可用以氧化所沉積的材料。 A vacuum apparatus is known for producing multilayer interference coatings on optical components [1], in which the ion source is directed towards the surface of an alternative flat rectangular target. The ion source and target are fixed relative to each other on a moving device so that they move simultaneously in a direction perpendicular to the long profile of the source. To improve coating uniformity, the optics are mounted in a rotatable holder. At the same time, in order to improve the quality of the coating produced, the device uses a second auxiliary ion source directed at the optical element. It is used to smooth the surface of optical components and suppress the formation of additional roughness as the number of films and coating thicknesses increase. It can also be used to oxidize the deposited material.
這種真空裝置的主要缺點在於所使用的塗層沉積技術,其不能確保有高沉積率,不能確保能高速度生產它們。因此,在一單次真空循環中沉積 含上百或更多層體的多層塗層的製程會花費數天,其導致難以在工業規模上使用上述真空裝置。此外,用於沉積塗層之離子束方法與多層塗層的異質性有關的缺點是由於來自離子源之離子束的非均勻性提取、以及靶材材料的不均勻濺鍍所致。 The main disadvantage of this vacuum device lies in the coating deposition techniques used, which do not ensure a high deposition rate and cannot produce them at a high rate. Therefore, in a single vacuum cycle deposition The process of multilayer coatings with hundreds or more layers takes several days, which makes it difficult to use the above-mentioned vacuum devices on an industrial scale. Furthermore, ion beam methods for depositing coatings have disadvantages related to the heterogeneity of multilayer coatings due to non-uniform extraction of the ion beam from the ion source, and non-uniform sputtering of the target material.
磁控管濺鍍裝置或磁控管也可用以產生具有複雜的多層塗層的光學元件。磁控管也屬於離子濺鍍裝置,且其顯著特徵為因強橫向磁場而導致的高濺鍍速率,其使得電漿在濺鍍(工作)靶材表面附近局部化,並且藉此增加離子電流密度。磁控管的使用顯著加速了帶有包括大量薄膜層之塗層的光學產品的製造,並且因此增加最終產品的產量。但是在磁控管濺鍍的領域中,需要減少靶材在其濺鍍表面上的腐蝕不均勻性。這需要被考慮,不只是為了有效率地利用靶材、也是作為對沉積在光學元件上的薄膜品質有不良影響的因素。 Magnetron sputtering devices or magnetrons can also be used to produce optical components with complex multilayer coatings. Magnetrons are also ion sputtering devices and are distinguished by their high sputtering rates due to strong transverse magnetic fields, which localize the plasma near the surface of the sputtering (working) target and thereby increase the ion current density. The use of magnetrons significantly speeds up the manufacture of optical products with coatings comprising a large number of thin film layers and thus increases the yield of the final product. In the field of magnetron sputtering, however, there is a need to reduce the corrosion inhomogeneity of the target on its sputtered surface. This needs to be considered, not only for efficient use of the target material, but also as a factor that adversely affects the quality of the film deposited on the optical element.
靶材工作表面的不均勻腐蝕的理由之一為在磁場線與濺鍍表面平行的區域中腐蝕會增加。存在已知的技術解決方案,其中位於靶材後方的磁鐵矩陣可相對於靶材旋轉、或濺鍍靶材本身可相對於磁鐵移動,以達到其工作表面的更均勻腐蝕。 One of the reasons for non-uniform corrosion of the target working surface is that corrosion increases in regions where the magnetic field lines are parallel to the sputtering surface. There are known technical solutions in which the matrix of magnets located behind the target can be rotated relative to the target, or the sputtering target itself can be moved relative to the magnets in order to achieve a more uniform erosion of its working surface.
專利文件[2]描述了一種真空裝置,其具有包括一可移動平坦靶材的平面磁控管。該真空裝置包括一真空處理腔室,其具有夾持具以將光學元件固定在腔室內部,並使其沿著與夾持具旋轉軸重合的其中心軸旋轉。在真空處理腔室內部的改良磁控管是用作為塗佈裝置,磁控管包括一平坦靶材(其工作表面係由一遮蔽裝置部分覆蓋)以及一磁鐵系統。靶材安裝在一可移動支架上,使得其可相對於磁鐵移動,並且位於靶材後方的磁鐵系統相對於處理腔室是不可移動的,而磁控管本身是固定在不移動的安裝表面上。因此,該真空裝置利用具有可移動靶材(其沿著磁性系統滑動)的磁控管在其工作表面上形成均質的腐蝕輪廓,並且還旋轉來維持靜止的沉積雲。 Patent document [2] describes a vacuum device with a planar magnetron comprising a movable flat target. The vacuum apparatus includes a vacuum processing chamber having a holder for fixing the optical element inside the chamber and rotating it along its central axis coincident with the rotation axis of the holder. A modified magnetron inside the vacuum processing chamber is used as the coating device, the magnetron comprising a flat target whose working surface is partly covered by a shielding device and a magnet system. The target is mounted on a movable support such that it can move relative to the magnet, and the magnet system behind the target is immovable relative to the process chamber, while the magnetron itself is fixed on a non-moving mounting surface . Thus, this vacuum device utilizes a magnetron with a movable target that slides along a magnetic system to form a homogeneous erosion profile on its working surface, and also rotates to maintain a stationary deposition cloud.
靶材工作表面的移動腐蝕區同時是上述技術解決方案的優點和缺點,因為它會導致不均勻塗佈及降低薄膜沉積的精確度。此外,使用移動的靶材,用遮蔽裝置來覆蓋不受腐蝕的靶材區域會變得有問題。藉由背向散射塗層材料或化學活性氣體所產生的含有不需要材料的介電薄膜層體會形成在未涉及濺鍍處理的靶材工作表面的暴露區域上。但該技術解決方案並不包含關於如何增加磁控管電阻以於靶材表面上形成介電薄膜的指引,但這是要實現沉積塗層的光學特性之高品質和穩定再現性所需。 The moving erosion zone of the target working surface is both an advantage and a disadvantage of the technical solutions described above, since it leads to uneven coating and reduces the precision of thin film deposition. Furthermore, with a moving target, it becomes problematic to cover areas of the target that are not subject to corrosion with a masking device. Dielectric film layers containing unwanted materials produced by backscattering coating materials or chemically active gases can form on exposed areas of the target working surface not involved in the sputtering process. But this technical solution does not contain guidelines on how to increase the magnetron resistance to form a dielectric film on the target surface, but this is required to achieve high quality and stable reproducibility of the optical properties of the deposited coating.
存在已知的真空裝置,其設計允許減少對沉積塗層的品質之可能的技術影響。舉例而言,專利文件[3]描述了一種具有剛性框架、用於生產多層塗層的真空裝置,所描述之真空裝置的設計最接近於請求保護的技術解決方案。該框架用於塗層製造的技術處理中涉及的裝設技術及其他裝置。其經安裝及設計以減少在技術處理期間處理腔室的震動及彎折之影響。這種擾動可由真空技術處理中涉及的各種裝置(例如真空泵)的操作而引起、或由環境震動所引起。框架可以設計為分離於真空處理腔室設立的元件、或是作為裝設在其中一個靜止表面上的裝置,或是其可以另一種有效方式設計而允許框架自上述震動和彎折隔離。框架的主要功能在於,在技術處理期間將裝設在其上的裝置固定在相對於彼此的穩定位置。 There are known vacuum devices whose design allows reducing possible technical influences on the quality of the deposited coating. As an example, patent document [3] describes a vacuum device with a rigid frame for the production of multi-layer coatings, the design of which is the closest to the technical solution claimed. The frame is used for the installation technology and other devices involved in the technical processing of coating manufacture. It is installed and designed to reduce the effects of vibration and flexing of the processing chamber during technical processing. Such disturbances may be caused by the operation of various devices involved in the vacuum technology process, such as vacuum pumps, or by environmental shocks. The frame can be designed as a separate component set up from the vacuum processing chamber, or as a device mounted on one of the stationary surfaces, or it can be designed in another effective way to allow isolation of the frame from vibrations and flexing as described above. The main function of the frame is to fix the devices mounted on it in a stable position relative to each other during technical processing.
除了真空處理腔室和框架之外,專利文件[3]中所描述的裝置包括:光學元件夾持具;光學元件,其具有待塗佈的開放前表面;平面型磁控管;濺鍍靶材,其工作表面平行於且朝向光學元件的前表面。真空裝置的設計包括特殊動作設備,其上固定有磁控管且可允許控制靶材的工作表面到光學元件的前表面的距離。除了監測各種製程參數的裝置之外,該裝置還包括用於連續監測每一塗層層體厚度的裝置。在光學塗層沉積期間,每一層體的厚度必須嚴格受控制,而且必須在光學元件的整體前表面上都相同。薄膜光學厚度確定最終 光學塗層的特性,例如反射率、穿透性和最大穿透波長,而且比是薄膜的幾何厚度更精確的特性。因此,有一種被稱為光學厚度的端對端控制方法,其被廣泛使用來監測層體光學厚度,並且考慮薄膜在光學元件上沉積期間的光學特性變化。所描述的真空裝置配備有一光學控制系統,用以執行在光學元件中心或離光學元件中心某距離處的光學厚度的端對端控制。 In addition to the vacuum processing chamber and frame, the apparatus described in the patent document [3] includes: an optical element holder; an optical element with an open front surface to be coated; a planar magnetron; a sputtering target material with its working surface parallel to and facing the front surface of the optical element. The design of the vacuum unit includes special motion equipment on which the magnetron is fixed and allows control of the distance from the working surface of the target to the front surface of the optic. In addition to means for monitoring the various process parameters, the apparatus also includes means for continuously monitoring the thickness of each coating layer. During optical coating deposition, the thickness of each layer must be tightly controlled and must be the same over the entire front surface of the optical element. The film optical thickness determines the final Properties of optical coatings, such as reflectivity, transmission, and wavelength of maximum transmission, are more precise than the geometric thickness of the film. Therefore, there is an end-to-end control method called optical thickness, which is widely used to monitor layer optical thickness and takes into account optical property changes of thin films during deposition on optical components. The described vacuum apparatus is equipped with an optical control system to perform end-to-end control of the optical thickness at or at a distance from the center of the optical element.
上述真空裝置無法在多層干涉塗層製造的每一次真空循環之後提供所需產品的需要產量。大部分的塗佈光學元件不具有必須的光學特性:塗層僅在光學元件的前表面上的狹窄環形中對應於規定需求。符合規定需求的塗層被放置在光學元件的前表面上的一狹窄環形中。為了增加合適產品的產量,必須增加環形的面積。因此,要沉積塗層就不只必須要控制從光學元件的前表面到靶材的工作表面的距離(如同在根據專利文件[3]的裝置中所提供者),也必須要控制從光學元件的旋轉軸到靶材中心的距離。 The vacuum devices described above cannot provide the required throughput of the desired product after each vacuum cycle of multilayer interference coating fabrication. Most coated optical elements do not have the necessary optical properties: the coating only corresponds to the prescribed requirements in a narrow ring on the front surface of the optical element. Coatings meeting specified requirements are placed in a narrow ring on the front surface of the optic. In order to increase the yield of suitable products, the area of the annulus must be increased. Therefore, to deposit a coating it is not only necessary to control the distance from the front surface of the optical element to the working surface of the target (as provided in the device according to patent document [3]), but also to control the distance from the optical element. The distance from the axis of rotation to the center of the target.
本技術解決方案旨在解決發明用於產生適合高精度光學產品的製造之多層干涉塗層之工業規模的真空裝置的技術問題。同時,由於多層塗層的光學參數的高度再現性、以及個別層的品質和均勻性,真空裝置應確保有用產品的產量的增加。 This technical solution aims to solve the technical problem of inventing an industrial-scale vacuum device for producing multilayer interference coatings suitable for the manufacture of high-precision optical products. At the same time, the vacuum device should ensure an increased yield of useful products due to the high reproducibility of the optical parameters of the multilayer coating, as well as the quality and homogeneity of the individual layers.
請求保護的技術解決方案中的該目標是藉由將磁控管安裝在自主運動裝置上而實現,該自主運動設備具有可改變從靶材工作表面的中心到夾持具旋轉軸的距離Y的可能性。具體而言,距離Y可在200至400mm的範圍中變化,而且從靶材的工作表面到固定的光學元件的前表面的距離X為150至450mm。 This object in the claimed technical solution is achieved by mounting the magnetron on an autonomous movement device with a variable distance Y from the center of the target working surface to the axis of rotation of the gripper possibility. Specifically, the distance Y may vary in the range of 200 to 400 mm, and the distance X from the working surface of the target to the front surface of the fixed optical element is 150 to 450 mm.
請求保護的真空裝置包含一剛性框架;用於光學元件的夾持具,其可沿著與固定在夾持具中的光學元件的中心軸重合的其中心軸旋轉和移動;帶有靶材的至少兩個磁控管,其工作表面平行於光學元件的前表面之平面;用於遮蔽靶材的工作表面的裝置;雙通道式光學控制系統,用於在沉積期間於光學元件的兩個幾何上分隔區域中測量塗層的光學特性;至少一個電漿源和一光學元件加熱裝置。 The claimed vacuum device comprises a rigid frame; a holder for an optical element, which is rotatable and movable along its central axis coincident with the central axis of the optical element held in the holder; At least two magnetrons whose working surfaces are parallel to the plane of the front surface of the optical element; means for shielding the working surface of the target; a dual-channel optical control system for the two geometries of the optical element during deposition Optical properties of the coating are measured in the upper compartment region; at least one plasma source and an optical element heating device.
較佳地,該電漿源是安裝在處理腔室中,其可影響靶材的工作表面和光學元件的前表面。 Preferably, the plasma source is mounted in a processing chamber which affects the working surface of the target and the front surface of the optical element.
在一可能設計中,真空裝置包含四個磁控管,其裝設在一框架上,該框架包括由加強肋連接的兩個分隔的平行表面。光學元件夾持具以及加熱器也裝設在框架上。 In one possible design, the vacuum device comprises four magnetrons mounted on a frame comprising two separate parallel surfaces connected by stiffening ribs. Optical element holders and heaters are also mounted on the frame.
磁控管靶材遮蔽裝置的一個示例包括至少一個遮蔽件,其裝設在一移動機構上。 One example of a magnetron target shielding device includes at least one shield mounted on a movement mechanism.
1:真空處理腔室 1: Vacuum processing chamber
2:磁控管 2: Magnetron
3:運動裝置 3: Sports device
4:靶材 4: Target
5:螢幕 5: screen
6:移動機構 6: Mobile mechanism
7:夾持具 7: Holder
8:光學元件 8: Optical components
9:旋轉裝置 9: Rotating device
10:電漿源 10: Plasma source
11:發射器 11: Launcher
12:接收器 12: Receiver
13:框架 13: frame
14:加熱器 14: heater
X、Y:距離 X, Y: distance
圖1示意地說明一種用於在一光學元件上製造多層干涉塗層的真空裝置。 Figure 1 schematically illustrates a vacuum apparatus for producing multilayer interference coatings on an optical element.
請求保護的技術解決方案的本質可由圖1的表示來解釋,圖1示意地說明一種用於在一光學元件上製造多層干涉塗層的真空裝置。 The essence of the claimed technical solution can be explained by the representation of FIG. 1 , which schematically illustrates a vacuum device for producing a multilayer interference coating on an optical element.
真空裝置包括一處理腔室1,其具有內部帶有安裝靶材4的至少兩個平面磁控管濺鍍裝置2(在下文中也稱為磁控管),靶材的工作表面進行濺鍍
處理。磁控管2依次參與處理,因為它們具有不同材料的靶材4,且每一個磁控管2沉積一特定組成的薄膜層,這提供了在光學元件8上的多層干涉薄膜塗層的製造處理。
The vacuum apparatus comprises a
用於遮蔽靶材4的工作表面的裝置也裝設在處理腔室1內部。在一種可能的設計版本中,遮蔽裝置是由帶有至少一個附接的遮蔽件5的移動機構6所構成,其確保遮蔽件5在靶材4的工作表面上方移動。因此,在技術處理期間,遮蔽件5覆蓋靶材4其中之一的工作表面,允許開啟及穩定化在遮蔽件5下方的磁控管,並且遮蔽靶材4的表面使其在另一磁控管2的操作期間免於塗層沉積。
Means for shielding the working surface of the
如果在處理腔室1中安裝兩個以上的磁控管2,遮蔽件5可以被設計為可提供同時覆蓋多個磁控管2的靶材工作表面4。
If more than two
同時,對於每一個各別的磁控管,在一個或多個移動機構6上可存在數個遮蔽件5。移動機構6可適用以使用移動遮蔽件5的各種原理,例如旋轉、剪切(shear)、往復運動(reciprocation motion)等。
At the same time, there may be
在沉積處理期間,光學元件8上的每一薄膜層的厚度均勻性會因靶材工作表面4之腐蝕及的變化幾何(因靶材材料消耗所導致)而改變。
During the deposition process, the thickness uniformity of each thin film layer on the
為了增進所製塗層中的層體均勻性,每一個磁控管2是裝設在一運動裝置3上。其允許移動磁控管,維持靶材工作表面4的平面,及/或改變磁控管2的靶材4朝向光學元件8的前表面的平面的傾斜角。每一個磁控管2都配備有自主運動裝置3。這表示對於具有兩個磁控管2的真空裝置而言,在操作之前或期間,每一個磁控管2都可以由其運動裝置3移動到一需要的位置。
In order to improve the uniformity of the layers in the produced coating, each
如果在處理腔室1中安裝有兩個以上的磁控管2,這些技術裝置可以依序或成對地工作。若安裝的磁控管2的數量是偶數,則同時操作的成對磁控管即形成一磁控管濺鍍系統。由於磁控管濺鍍系統中的每一個磁控管2都具有其
自身的自主位移裝置3,因此其可位移一段與該磁控管濺鍍系統中的另一個磁控管的位移距離不一致的距離。
If more than two
為了要確保沉積處理的高效率並且提升薄膜品質,在專利的真空設備中使用了指向濺鍍區的至少一個感應耦合電漿產生裝置10(在下文中稱為「電漿源」)。由於電漿源10可於塗層沉積期間執行各種功能,較佳地,其可被安裝以影響靶材4的工作表面和光學元件8的前表面。在這種情況下,電漿源10可用來在塗佈處理之前即刻預先清潔光學元件8的前表面,以及輔助技術處理,因為它因控制濺鍍區中離子密度的能力而可加速技術處理並且提升塗層品質。電漿源10所產生、且射入到濺鍍區中或更確切來說是進入磁控管放電電漿區中的電漿束允許增加對靶材4的工作表面上介電質薄膜形成的阻值。因此,其允許顯著增加塗層沉積速率,並減少電弧對靶材表面4的影響,從而提升沉積在光學元件8上的薄膜的品質。電漿源10的使用係藉由使靶材4的工作表面上汙染物和化學反應產物的形成最小化而減少技術週期的時間,從而藉由擴大磁控管放電電漿的存在面積而提升磁控管2的功能性特性,並且促成達成沉積塗層的高品質與其物理特性的穩定再現性。
In order to ensure high efficiency of the deposition process and improve film quality, at least one inductively coupled plasma generator 10 (hereinafter referred to as "plasma source") directed to the sputtering area is used in the patented vacuum device. Since the
若處理腔室1包括兩個磁控管2和一個電漿源10,當磁控管2在技術處理期間交替時,電漿源10則持續工作、或切換至不同的操作模式、或者僅與磁控管2其中一個一起切換成開啟。若在處理腔室1中安裝有兩個以上的磁控管2時,則可使用數個電漿源10。在這種情況下,每一個電漿源可在沉積處理開始之前執行光學元件8前表面處理,及/或與磁控管2其中一個或磁控管濺鍍系統以及輔助沉積的操作的開始一起開啟,及/或持續工作。
If the
真空處理腔室1內部的夾持具7是用以固定光學元件8,而前表面平行於靶材4的工作表面的平面。光學元件8是以夾持具7的中心軸與光學元件8
的中心軸重合的方式固定在夾持具7中。光學元件8的夾持具7經設計以沿著其中心軸旋轉及移動。
The
由於所製薄膜塗層的方位角均勻性取決於光學元件8在塗層製造處理期間的旋轉速度,因此本專利真空裝置包括旋轉裝置9,其提供的光學元件8的旋轉速度高達每分鐘3000轉。
Since the azimuthal uniformity of the produced thin film coating depends on the rotational speed of the
為了避免濺鍍區的汙染,真空裝置的所有機構都可自濺鍍區移除。因此,夾持具7的旋轉裝置9是位於處理腔室1內部、濺鍍區外部,或是位於處理腔室1本身外部,如圖1所示。基於相同理由,磁控管2的運動裝置3和屏幕(screen)5的移動機構6也是在真空裝置的濺鍍區外部。為了減少汙染,可於該裝置中使用更合適的機構,例如在旋轉裝置9中的磁性耦合件。
In order to avoid contamination of the sputtering zone, all mechanisms of the vacuum device can be removed from the sputtering zone. Thus, the
維持圖1中所示之濺鍍區中的磁控管2和夾持具7的特定位置,如X和Y,以實現所沉積之薄膜塗層的特定均勻性。
A specific position, such as X and Y, of the
距離X是從光學元件8的前表面到靶材4的工作表面的距離(光學元件的前表面是面向濺鍍區、進行塗佈的表面)。
The distance X is the distance from the front surface of the
距離Y是從光學元件8的中心旋轉軸到靶材4的中心的距離。
The distance Y is the distance from the center rotation axis of the
距離X和Y都是以實驗確定範圍,X為150至450mm,Y為200至400mm。在這些範圍中的距離X和Y允許設定真空裝置以在多層干涉塗層沉積的均勻性方面實現超高精度。 The distances X and Y are determined by experiments, X is 150 to 450mm, and Y is 200 to 400mm. Distances X and Y in these ranges allow setting the vacuum device to achieve ultra-high precision in the uniformity of multilayer interference coating deposition.
若夾持具7中的光學元件8在技術處理期間不沿著真空處理腔室1內部的夾持具中心軸移動,則距離X在整個技術處理中都會是固定的,而且可在真空裝置的互相操作時段或重新調整期間改變。在這種情況下,在塗層沉積處理期間,光學元件8與夾持具7藉由旋轉裝置9而沿其中心軸旋轉,並且光學元件8在沉積區中的空間位置仍維持不變。
If the
距離Y在每一個磁控管2之技術處理開始之前計算,並且可在處理期間依所需要的均勻性重複改變,但保持在上述區間內。
The distance Y is calculated before the technical processing of each
實現所沉積塗層的計算光學特性的可能性取決於所使用的控制方法。對於光學薄膜而言,它們的光學厚度確定了塗層本身的光學特性,而且是一項精確的特徵。本專利真空裝置配備有自動系統以進行塗層光學厚度的端對端控制,其具有兩個光學通道。兩個光學通道的存在是由光學控制系統中的兩個發射器11和兩個接收器12之存在所確保。光學厚度控制的方法為單色光度法(monochromatic photometry),此方法是基於記錄由干涉現象引起、且藉由改變光學薄膜厚度所致的透射最大值和最小值。
The possibility to achieve computational optical properties of the deposited coating depends on the control method used. For optical films, their optical thickness determines the optical properties of the coating itself and is a precise characteristic. The patented vacuum unit is equipped with an automated system for end-to-end control of coating optical thickness, which has two optical channels. The presence of two optical channels is ensured by the presence of two
光學厚度的端對端控制是在塗層沉積期間在光學元件8的離旋轉軸不同半徑處的兩個不同點中實施:在所製得塗層的最大均勻性區域中。
The end-to-end control of the optical thickness is carried out during the coating deposition in two different points of the
在這兩個點中的塗層光學厚度的差異是根據通過兩個光學控制通道的訊號差異來確定。 The difference in coating optical thickness at these two points is determined from the difference in signals through the two optical control channels.
光學控制軟體比較從兩個光學通道所取得的數值,根據訊號差異的數值進行計算,並且發送一適當訊號來控制該沉積處理。其為用以改變技術設備的指定參數(例如,磁控管2的位置)的訊號。
The optical control software compares the values obtained from the two optical channels, performs calculations based on the magnitude of the signal difference, and sends an appropriate signal to control the deposition process. It is a signal used to change a specified parameter of the technical equipment, for example the position of the
為了光學元件8的加熱和熱穩定,在真空處理腔室1中安裝有方位朝向該光學元件8的至少一個加熱器14。加熱器在真空處理腔室中的位置可以不同:在光學元件8的上方或下方、在夾持具7上等等。
For heating and thermal stabilization of the
基於在真空處理腔室1中裝設技術裝置、馬達以及真空技術處理的其他組件之目的,可使用一特殊剛性框架13。該框架是用來最小化技術腔室在技術處理期間所經歷的震動和彎折的衝擊。基此目的,框架13可完全與處理腔室1隔離、或是安裝在它的其中一個靜止表面上,例如在基座上。框架13由垂直加強肋所連接的兩個平坦的水平表面構成。磁控管2和屏幕5可以被裝設在其
中一個下表面上、在磁控管放電電漿產生區域的側邊上。帶有光學元件8的夾持具7可以被固定在框架13的上平面上。在這個情況下,磁控管2的運動裝置3、屏幕5的移動機構6、夾持具7的旋轉裝置9是裝設在框架13外部。利用裝置的這種配置,濺鍍區不會受到所列裝置的機械部件的汙染。此外,組件相對於彼此的方位(orientation)、以及它們之間的距離仍保持穩定,亦即,X和Y參數都可以被可靠地且精確地調節。
For the purpose of arranging technical devices, motors and other components for vacuum technology processing in the vacuum processing chamber 1 a special
所請求的真空裝置包括四個平面磁控管2,其成對工作並且裝g設在框架13上,配備有直徑為250mm的圓形靶材4;所安裝兩個感應耦合式電漿源10,其可同時處理靶材4的工作表面和光學元件8的前表面,以及裝設在框架13上的平坦夾持具7。此真空裝置以如下方式操作。在夾持具7中夾持有以光學玻璃製成的9吋平坦光學元件8,夾持具7的目的在於將一個光學元件8固持在處理腔室1內、沉積區中、在靶材4的工作表面上方一經計算的高度X處。所夾持的光學元件8的中心軸與夾持具7的中心軸重合,且其前表面與磁控管2的平坦靶材4的工作表面平行。
The requested vacuum device consists of four
利用低真空和高真空抽氣系統(未示於圖式中),將真空處理腔室1抽氣至達到合適的初始壓力以開始技術處理。在抽氣期間或在達到合適的初始壓力之後,位於夾持具7上光學元件8上方的加熱器14被開啟並且對光學元件8加熱至一需要溫度。接著,裝設在真空處理腔室1的壁部上的電漿源10(其位於第一噴塗系統的磁控管2上方)被切換成開啟並且開始操作。電漿源10在塗佈處理之前執行光學元件8的前表面的預先清潔。在清潔操作期間,夾持具7的旋轉裝置9以每分鐘400至2000轉的速度旋轉光學元件8,而且第一磁控管濺鍍系統的靶材4的工作表面被屏幕5所覆蓋。接著,第一磁控管濺鍍系統在屏幕5下開啟,並且執行預先濺鍍以移除靶材4的工作表面的氧化物薄膜。在完成準備程序之後,真空裝置即準備好進行塗層沉積處理。
Using low and high vacuum pumping systems (not shown in the drawings), the
光學元件8的前表面上之多層干涉塗層的第一薄膜層的沉積是在第一磁控管濺鍍系統的兩個磁控管2都在操作、且電漿源10處理其靶材的工作表面時發生。為了開始技術處理,藉由使用移動機構6偏移屏幕5來打開工作的磁控管濺鍍系統的靶材4的工作表面。根據技術的技巧,工作氣體和某數值以及頻率的電力被供應至處理腔室1、至磁控管2以及至電漿源10。
The deposition of the first thin film layer of the multilayer interference coating on the front surface of the
與第一薄膜層沉積開始同時,第二磁控管濺鍍系統被切換成開啟,其由移動機構6所位移的屏幕5所覆蓋,執行預先濺鍍,因此準備好其靶材工作表面以供進行技術處理。
Simultaneously with the start of the deposition of the first thin film layer, the second magnetron sputtering system is switched on, covered by the
在得到來自於監測成長薄膜層的光學厚度的光學控制系統的對應訊號之後,停止以第一磁控管濺鍍系統進行第一薄膜層的沉積。利用發射器11和接收器12,光學控制系統通過兩個光學通道來監測所沉積之塗層在光學元件8的兩個點中的光學厚度。接著,系統將經由兩個光學通道而得到的數值彼此比較。比較光學訊號大小的結果被使用作為反饋訊號,用以產生對應的控制訊號以供運動裝置3改變工作磁控管2的距離Y。由於經由兩個光學通道來監測薄膜層光學參數是在整個沉積技術循環期間發生,因此它們的匹配也是在整個技術循環間發生。同時,由於每一個磁控管2是安裝在一各別運動裝置6上,故可針對每一個磁控管2來計算及自主改變參數Y。
After obtaining the corresponding signal from the optical control system monitoring the optical thickness of the growing thin film layer, the deposition of the first thin film layer by the first magnetron sputtering system is stopped. Using a
利用與先前未使用的電漿源協作的第二磁控管濺鍍系統,以相同方式沉積下一層薄膜塗層,直到接收到來自光學控制系統關於其終止的指令為止。利用不同的靶材4材料和利用不同的電漿源10來交替磁控管濺鍍系統的操作,即可製得具有兩種交替薄膜層類型、具有指定特徵的多層干涉塗層。
The next thin film coating is deposited in the same manner using a second magnetron sputtering system in cooperation with a previously unused plasma source until an instruction to terminate it is received from the optical control system. By alternating the operation of the magnetron sputtering system with
藉由維持指定的距離X和Y,可實現沉積薄膜層的高度均勻性。在真空裝置中,均勻性也藉由使用帶有兩個光學通道的光學控制系統來提供。由光學控制系統通過光學通道來接收所製得塗層的測量光學參數並將其彼此比 較。若所得的光學訊號比較數值不符合可允許變異,則磁控管會在設備中自動在距離Y內移動,以匹配所測量的光學特徵。 By maintaining the specified distances X and Y, a high degree of uniformity in the deposited thin film layer can be achieved. In vacuum devices, uniformity is also provided by using an optical control system with two optical channels. The measured optical parameters of the prepared coating are received by the optical control system through the optical channel and compared with each other Compare. If the obtained comparative value of the optical signal does not comply with the allowable variation, the magnetron is automatically moved within the distance Y in the device to match the measured optical characteristic.
所製得塗層的品質和本專利真空裝置中的沉積速率也受到電漿源的影響,其將帶電粒子射入磁控管放電電漿區,這影響電漿和靶材。因此,其變成可降低技術處理的工作壓力,並且藉由這個方式來增加原子化材料的自由路徑距離,以提升光學塗層的品質。同時,電漿源的操作增加了電漿中離子化狀態的密度,而且在這個情況下,濺鍍處理變為由來自兩種獨立來源(其自身的磁控管放電和一外部電漿束)的離子所支援。 The quality of the coating produced and the deposition rate in the vacuum apparatus of this patent is also affected by the plasma source, which shoots charged particles into the magnetron discharge plasma region, which affects the plasma and the target. Therefore, it becomes possible to reduce the working pressure of technical processing, and in this way to increase the free path distance of atomized materials to improve the quality of optical coatings. At the same time, the operation of the plasma source increases the density of ionized states in the plasma, and in this case the sputtering process becomes controlled by two independent sources (its own magnetron discharge and an external plasma beam) supported by ions.
由於真空裝置利用技術裝置進行高速濺鍍,亦即磁控管和輔助電漿源的組合,塗佈循環時間將因技術處理時間的減少而減少。與使用離子束濺鍍技術的真空裝置相比,磁控管一個不僅具有更高的生產率(亦即多層塗層沉積速率),而且也能有較長的操作時間無需維修。因此,配備有磁控管的真空裝置具有較高的利用率,亦即增加的操作效率。同時,藉由在運動裝置上安裝磁控管,磁控管濺鍍裝置中的靶材可以被使用,直到最大程度的靶材腐蝕。 Coating cycle time will be reduced due to the reduction of technological process time due to the high-speed sputtering by the vacuum device using technological devices, ie a combination of magnetron and auxiliary plasma source. Compared with vacuum devices using ion beam sputtering technology, magnetrons not only have a higher productivity (ie multi-layer coating deposition rate), but also have a longer operation time without maintenance. Thus, a vacuum device equipped with a magnetron has a higher availability, ie increased operating efficiency. At the same time, by mounting the magnetron on the moving device, the target in the magnetron sputtering device can be used up to the maximum target corrosion.
因此,對於該設計的所主張之真空裝置,可解決該技術任務、確保技術處理時間的減少、以及提升所沉積薄膜層的均勻性,從而增加真空設備的效率及增加有效高精度光學產品的產量。 Therefore, for the proposed vacuum device of this design, it is possible to solve the technical task, to ensure the reduction of the technical processing time, and to improve the uniformity of the deposited thin film layers, thereby increasing the efficiency of the vacuum equipment and increasing the yield of effective high-precision optical products .
資料來源: source:
1.專利號RU 2654991,於2018年5月23日公開 1. Patent No. RU 2654991, published on May 23, 2018
2.專利號US 9771647,於2017年9月26日公開 2. Patent No. US 9771647, published on September 26, 2017
3.專利號US 6736943,於2004年5月18日公開 3. Patent No. US 6736943, published on May 18, 2004
1:真空處理腔室 1: Vacuum processing chamber
2:磁控管 2: Magnetron
3:運動裝置 3: Sports device
4:靶材 4: Target
5:螢幕 5: screen
6:移動機構 6: Mobile mechanism
7:夾持具 7: Holder
8:光學元件 8: Optical components
9:旋轉裝置 9: Rotating device
10:電漿源 10: Plasma source
11:發射器 11: Launcher
12:接收器 12: Receiver
13:框架 13: frame
14:加熱器 14: heater
X、Y:距離 X, Y: distance
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW111203305U TWM638118U (en) | 2022-03-31 | 2022-03-31 | A vacuum unit for producing multilayer interference coatings on an optical element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW111203305U TWM638118U (en) | 2022-03-31 | 2022-03-31 | A vacuum unit for producing multilayer interference coatings on an optical element |
Publications (1)
Publication Number | Publication Date |
---|---|
TWM638118U true TWM638118U (en) | 2023-03-01 |
Family
ID=86690930
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW111203305U TWM638118U (en) | 2022-03-31 | 2022-03-31 | A vacuum unit for producing multilayer interference coatings on an optical element |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWM638118U (en) |
-
2022
- 2022-03-31 TW TW111203305U patent/TWM638118U/en unknown
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1628324B1 (en) | Magnetron sputtering device | |
CA2110250C (en) | Depositing different materials on a substrate | |
JP2017128813A (en) | Method for coating substrate and coater | |
EP2954092B1 (en) | Method of hipims sputtering and hipims sputter system | |
KR20060045884A (en) | Coater with a large-area assembly of rotatable magnetrons | |
US6736949B2 (en) | Filtered cathode arc source deposition apparatus | |
TWM638118U (en) | A vacuum unit for producing multilayer interference coatings on an optical element | |
US4424103A (en) | Thin film deposition | |
EP4163416A1 (en) | A vacuum unit for producing multilayer interference coatings on an optical element | |
RU2811325C2 (en) | Vacuum installation for production of multilayer interference coatings on optical element | |
JP2016501314A (en) | Evaporation source moving type evaporation system | |
JP3229312B2 (en) | Method and apparatus for chemically coating a surface area of a work piece which faces each other | |
JPH11302841A (en) | Sputtering system | |
WO2018095514A1 (en) | Apparatus and method for layer deposition on a substrate | |
JP4452499B2 (en) | Method and apparatus for manufacturing a layer system for each optical precision element | |
KR102244623B1 (en) | Sputtering arrangement for sputtering a material on a substrate surface | |
WO2016012038A1 (en) | Target arrangement, processing apparatus therewith and manufacturing method thereof | |
TWI400347B (en) | Apparatus and method of sputtering deposition | |
WO2002008484A2 (en) | Vacuum module for applying coatings | |
KR20120122820A (en) | Coating apparatus for uniform coating | |
KR102478286B1 (en) | In-line sputtering system | |
EP4270444A1 (en) | Magnetron sputtering system with tubular sputter cathode and method for controlling a layer thickness | |
JP2003082462A (en) | Vacuum film deposition system | |
JP2001247963A (en) | Ecr sputter film forming apparatus | |
JP2010270388A (en) | Film deposition system and film deposition method |