KR20160127858A - Selective transferring apparatus and method - Google Patents

Selective transferring apparatus and method Download PDF

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KR20160127858A
KR20160127858A KR1020150058667A KR20150058667A KR20160127858A KR 20160127858 A KR20160127858 A KR 20160127858A KR 1020150058667 A KR1020150058667 A KR 1020150058667A KR 20150058667 A KR20150058667 A KR 20150058667A KR 20160127858 A KR20160127858 A KR 20160127858A
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unit
flexible substrate
electrode
mounting position
laser beam
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KR1020150058667A
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Korean (ko)
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KR101698448B1 (en
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김재구
김재현
조성학
황경현
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한국기계연구원
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step

Abstract

The present invention relates to a selective peeling and transferring apparatus which selectively peels a plurality of devices formed on a wafer substrate by using a dummy substrate, and selectively transfers the peeled device to a flexible substrate. The apparatus includes a patterning unit, a hardener spraying unit, a mounting and hardening unit, a protective film applying unit, a drilling unit and an electrode connecting unit. The patterning unit irradiates laser beams to the flexible substrate having a conductive thin film formed thereon so as to form a mounting position where electrode lines and a device will be mounted. The hardener spraying unit sprays a hardener onto the mounting position, wherein the hardener will be hardened when the laser beams are irradiated. The mounting and hardening unit mounts the device on the mounting position by aligning the device attached to the dummy substrate with the mounting position, and fixes the device to the flexibly substrate by irradiating the laser beams to the hardener. The protective film applying unit applies a protective film onto an upper surface of the flexible substrate and the device. The drilling unit irradiates the laser beams to respectively form through holes that pass through protective films of upper sides of a first electrode unit of the device, a first electrode line that will be electrically connected to the first electrode unit among the electrode lines, a second electrode unit of the device, and a second electrode line that will be electrically connected to the second electrode unit among the electrode lines. The electrode connecting unit electrically connects the first electrode unit and the first electrode line through the through hole, and electrically connects the second electrode unit and the second electrode line through the through hole.

Description

[0001] The present invention relates to a selective transferring apparatus and method,

The present invention relates to a selective transfer apparatus and method, and more particularly, to a selective transfer apparatus and method for separating a high-performance element obtained on the basis of a wafer substrate from a wafer substrate and transferring the transferred high-performance element onto a flexible substrate.

Conventional processes for manufacturing a device are characterized by respective methods. In the case of a semiconductor substrate based on a wafer substrate, it is possible to fabricate a high-performance device based on a high density because the minimum pattern size that can be fabricated is several nanometers. However, since the wafer is a hard wafer, the device is also hard. In the case of printed electronic technology based on flexible substrate, the minimum pattern size that can be fabricated is several um, but it is difficult to realize high performance such as semiconductor process, but it is a form that can be folded or bent because it is based on flexible film.

In this environment, in order to produce high-performance flexible devices, the best use of these advantages is the separation and transfer of high-performance devices. That is, a high-performance device obtained through a semiconductor process based on a wafer substrate is peeled from a wafer substrate and transferred to a flexible substrate, and then a flexible high-performance device component is manufactured through a post-process.

1 shows in detail the peeling and transfer process of a high-performance device. That is, the dummy substrate 1 is used to separate the high-performance device 3 attached to the wafer substrate 2, and then transfer the high-performance device 3 to the flexible substrate 4. [

When separating or transferring the high performance device 3 using the dummy substrate 1, the conditions necessary for smooth process execution are as follows. The adhesive force between the dummy substrate 1 and the element 3 must be larger than the adhesive force between the wafer substrate 2 and the element 3 and the adhesive strength between the dummy substrate 1 and the element 3 The adhesive force between the flexible substrate 4 and the element 3 should have a larger value.

However, in the case of the conventional selective peeling and transferring apparatus, expensive equipment equipments are required mainly because semiconductor processing is utilized, and there is a problem that the environment is contaminated by using harmful chemical substances. Also, there is a problem in that each process is implemented in a single-acting equipment, not in an in-line system, thereby lengthening the process time.

Korean Registered Patent No. 1487438 (registered on Feb. 11, 1999, entitled " selective peeling and transferring apparatus and method)

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to solve the above-mentioned problems, and it is an object of the present invention to provide a method of transferring a high performance device to a flexible substrate using a laser without using a chemical substance, The present invention provides a selective transfer apparatus and method capable of preventing environmental pollution and shortening a processing time.

According to an aspect of the present invention, there is provided a selective transfer apparatus for selectively removing a plurality of elements formed on a wafer substrate using a dummy substrate and selectively transferring the separated elements to a flexible substrate, A patterning unit for irradiating a flexible substrate on which the conductive thin film is formed with a laser beam to form an electrode line and a mounting position at which the device is to be mounted; A curing agent injection unit that injects a curing agent that is cured when the laser beam is irradiated onto the mounting position; A mounting and curing unit for aligning the mounting position with the element attached to the dummy substrate to mount the element at the mounting position and fixing the element to the flexible substrate by irradiating a laser beam to the curing agent; A protective film application unit for applying a protective film to the upper surface of the element and the flexible substrate; A first electrode line of the device, a first electrode line electrically connected to the first electrode line of the electrode line, a second electrode line of the device, and a second electrode line of the second line, A drilling unit forming a through hole passing through the protective film on the upper side of the second electrode line to be electrically connected to the electrode part; And an electrode connection unit electrically connecting the first electrode unit and the first electrode line through the through hole and electrically connecting the second electrode unit and the second electrode line through the through hole, .

In the selective transfer apparatus according to the present invention, the mounting position may be formed by the patterning unit so as to be recessed from the surface of the flexible substrate.

In the selective transfer apparatus according to the present invention, in the patterning unit, the number of times of irradiation of the laser beam for forming the electrode line and the number of times of irradiation of the laser beam for forming the mounting position may be set to be different from each other.

In the selective transfer apparatus according to the present invention, the flexible substrate transfer unit may include a flexible substrate supply roll for supplying the flexible substrate in a roll form, and a flexible substrate recovery roll for recovering the flexible substrate in a roll form; And the flexible substrate may be transported in a roll-to-roll manner.

The laser beam output from the laser output unit is branched into the patterning unit, the mounting and hardening unit, and the drilling unit. The selective transfer apparatus according to the present invention further includes a laser output unit for outputting the laser beam, .

In the selective transfer apparatus according to the present invention, the mounting and curing unit may include: a mounting unit provided on the flexible substrate and having a camera for aligning the device and the mounting position, and a camera transferring unit for transferring the camera, unit; And a curing unit provided below the flexible substrate and including a laser head for irradiating a curing agent injected at the mounting position with a laser beam and a head conveying unit for conveying the laser head, The head transfer sections can operate in synchronization with each other.

According to another aspect of the present invention, there is provided a selective transfer apparatus for selectively removing a plurality of elements formed on a wafer substrate using a dummy substrate, selectively transferring the separated elements to a flexible substrate, A first patterning unit for forming a first electrode line, a mounting position at which the device is to be mounted, and a via hole passing through the flexible substrate by irradiating a laser beam onto the upper surface side conductive thin film of the flexible substrate on both surfaces of which the conductive thin film is formed; A second patterning unit for irradiating a laser beam to a lower surface conductive thin film of the flexible substrate to form an exposure hole passing through the second electrode line and the lower surface conductive thin film and exposing the mounting position; A curing agent injecting unit for injecting a curing agent to be cured when the laser beam is irradiated onto a mounting position of the flexible substrate; A mounting and curing unit for aligning the mounting position with the element attached to the dummy substrate to mount the element at the mounting position and fixing the element to the flexible substrate by irradiating a laser beam to the curing agent; A protective film application unit for applying a protective film to the upper surface of the element and the flexible substrate; A method of manufacturing a semiconductor device, comprising: irradiating a laser beam to form a first electrode portion of the device, a first electrode line to be electrically connected to the first electrode portion, a second electrode portion of the device, Respectively; An electrode connecting unit electrically connecting the first electrode unit and the first electrode line through the through hole and electrically connecting the second electrode unit and the second electrode line through the through hole and the via hole; And a control unit.

According to an aspect of the present invention, there is provided a selective transfer method for selectively removing a plurality of elements formed on a wafer substrate using a dummy substrate and selectively transferring the separated elements to a flexible substrate, A patterning step of irradiating a flexible substrate on which the conductive thin film is formed with a laser beam to form an electrode line and a mounting position at which the device is to be mounted; A curing agent spraying step of spraying a curing agent to be cured when the laser beam is irradiated onto the mounting position; A mounting and curing step of aligning the mounting position with an element attached to the dummy substrate to mount the element at the mounting position and fixing the element to the flexible substrate by irradiating the curing agent with a laser beam; Applying a protective film to an upper surface of the element and the flexible substrate; A first electrode line of the device, a first electrode line electrically connected to the first electrode line of the electrode line, a second electrode line of the device, and a second electrode line of the second line, A drilling step of forming a through hole passing through the protective film on the upper side of the second electrode line to be electrically connected to the electrode part; And electrically connecting the first electrode unit and the first electrode line through the through hole and electrically connecting the second electrode unit and the second electrode line through the through hole, .

According to another aspect of the present invention, there is provided a selective transfer method for selectively removing a plurality of elements formed on a wafer substrate using a dummy substrate, selectively transferring the separated elements to a flexible substrate, A first patterning step of forming a first electrode line, a mounting position at which the device is to be mounted, and a via hole passing through the flexible substrate by irradiating a laser beam onto the upper surface side conductive thin film of the flexible substrate having the conductive thin film formed on both surfaces thereof; A second patterning step of irradiating a laser beam to the lower surface conductive thin film of the flexible substrate to form an exposure hole through the second electrode line and the lower surface conductive thin film and exposing the mounting position; A curing agent spraying step of spraying a curing agent, which hardens when a laser beam is irradiated, onto a mounting position of the flexible substrate; A mounting and curing step of aligning the mounting position with an element attached to the dummy substrate to mount the element at the mounting position and fixing the element to the flexible substrate by irradiating the curing agent with a laser beam; Applying a protective film to an upper surface of the element and the flexible substrate; A second electrode portion of the device, and a second electrode portion electrically connected to the first electrode portion, the second electrode portion of the device, and the second electrode portion electrically connected to the second electrode portion by irradiating a laser beam, A drilling step of forming a through hole passing through the protective film on the upper side of the electrode line, respectively; An electrode connection step of electrically connecting the first electrode unit and the first electrode line through the through hole and electrically connecting the second electrode unit and the second electrode line through the through hole and the via hole; And a control unit.

According to the selective transfer apparatus and method of the present invention, environmental pollution can be prevented and the processing time can be shortened.

Further, according to the selective transfer apparatus and method of the present invention, the precision of the manufacturing process can be improved.

Further, according to the selective transfer apparatus and method of the present invention, the processing time can be shortened.

1 is a view schematically showing a peeling and transferring process of a high-performance device,
2 is a view illustrating a selective transfer apparatus according to an embodiment of the present invention,
FIG. 3 is a view for explaining the function of the patterning unit of the selective transfer apparatus of FIG. 2,
FIG. 4 is a view for explaining the functions of the mounting and curing unit of the selective transfer apparatus of FIG. 2,
Fig. 5 is a view for explaining the function of the drilling unit of the selective transfer apparatus of Fig. 2,
FIG. 6 is a view for explaining the function of the electrode connection unit of the selective transfer apparatus of FIG. 2,
FIG. 7 is a view showing a selective transfer apparatus according to another embodiment of the present invention,
8 is a view for explaining the functions of the first patterning unit and the second patterning unit of the selective transfer apparatus of FIG. 7,
Fig. 9 is a view for explaining the functions of the mounting and curing unit of the selective transfer apparatus of Fig. 7,
Fig. 10 is a view for explaining the function of the drilling unit of the selective transfer apparatus of Fig. 7,
11 is a view for explaining the function of the electrode connection unit of the selective transfer apparatus of FIG.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of a selective transfer apparatus and method according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 2 is a view showing a selective transfer apparatus according to an embodiment of the present invention, FIG. 3 is a view for explaining a function of a patterning unit of the selective transfer apparatus of FIG. 2, FIG. 5 is a view for explaining the function of the drilling unit of the selective transfer apparatus of FIG. 2, and FIG. 6 is a view for explaining the functions of the electrode connection unit of the selective transfer apparatus of FIG. Fig.

2 to 6, the selective transfer apparatus 100 according to the present embodiment selectively removes a plurality of elements formed on a wafer substrate using a dummy substrate, selectively transfers the separated elements to a flexible substrate A patterning unit 110, a hardener spray unit 120, a mounting and curing unit 130, a protective film application unit 140, a drilling unit 150, An electrode connection unit 160, and a flexible substrate transfer unit 170.

The laser output unit 101 outputs a laser beam L for processing the conductive thin film 4a or the flexible substrate 4. [ In this embodiment, the laser output portion 101 having a wavelength of about 355 nm is used, but a laser output portion for outputting a laser beam having a different wavelength suitable for processing the conductive thin film 4a or the flexible substrate 4 may also be used.

The laser beam L output from the laser output section 101 may be branched to the patterning unit 110, the mounting and curing unit 130 and the drilling unit 150, which will be described later. A laser beam L output from the laser output section 101 is provided to the patterning unit 110 (see FIG. 1) by providing a beam splitter, a reflecting mirror, or an attenuator used as a transmitting means of the laser beam L in the path of the laser beam L. [ The mounting and curing unit 130, the drilling unit 150, and the like.

2, the conductive thin film 4a or the flexible substrate 4 can be processed using a plurality of laser output units.

The patterning unit 110 irradiates the laser beam L to the flexible substrate 4 on which the conductive thin film 4a is formed to form the mounting position 6 where the electrode lines 5 and the elements 3 are to be mounted.

3, the patterning unit 110 includes a laser head 111 that receives the laser beam L output from the laser output unit 101 and irradiates the laser beam L toward the flexible substrate 4, and the laser head 111 The electrode line 5 and the mounting position 6 are formed.

In order to form the electrode line 5 using the patterning unit 110, the conductive thin film 4a is irradiated with a laser beam L to etch the conductive thin film 4a formed on the flexible substrate 4 in a desired pattern . At this time, only the conductive thin film 4a is etched so that the flexible substrate 4 is not damaged.

In order to form the mounting position 6 using the patterning unit 110, the conductive thin film 4a formed on the flexible substrate 4 and a part of the flexible substrate 4 are etched by irradiating the laser beam L. [ do. At this time, the mounting position 6 formed by the patterning unit 110 may be formed to be recessed from the surface of the flexible substrate 4.

It is preferable to set the number of times of irradiation of the laser beam L differently in the process of forming the electrode line 5 and the mounting position 6. That is, in the process of forming the electrode line 5 for etching only the conductive thin film 4a, the number of times of irradiation of the laser beam L is relatively reduced and the conductive thin film 4a and the flexible substrate 4 are partially etched In the process of forming the mounting position 6, it is preferable to increase the number of irradiation of the laser beam L relatively.

The hardener spray unit 120 injects the hardener 7, which hardens when the laser beam L is irradiated, onto the mounting position 6. An appropriate amount of the curing agent 7 is sprayed to fix the element 3 (for example, an LED element) to the mounting position 6 formed to be recessed from the surface of the flexible substrate 4. [

The mounting and curing unit 130 mounts the element 3 to the mounting position 6 and hardens the curing agent 7 to fix the element 3 to the flexible substrate 4. The mounting unit 131, And a curing unit 132.

The mounting unit 131 includes a camera for aligning the element 3 and the mounting position 6, a camera transferring unit for transferring the camera, and a push member for placing the element 3 in the mounting position 6 And is provided on the upper side of the flexible substrate 4.

The mounting position 6 can be photographed using a camera and the device 3 and the mounting position 6 attached to the dummy substrate 1 can be aligned based on the obtained image. When the alignment of the element 3 and the mounting position 6 is completed, the element 3 is mounted on the mounting position 6 using the push member, and the camera is transferred to the next mounting position 6 using the camera transferring unit .

The curing unit 132 includes a laser head 136 for irradiating the curing agent 7 to the mounting position 6 with a laser beam L, a camera for photographing the mounting position 6, a laser head 136 And a head transferring unit for transferring the camera, and is installed on the lower side of the flexible substrate 4.

The position of the curing agent 7 sprayed on the mounting position 6 can be grasped by photographing the mounting position 6 using the camera. The element 3 is fixed to the flexible substrate 4 by aligning and aligning the laser head 136 to the lower side of the hardening agent 7 and hardening the hardening agent 7 by irradiating the hardening agent 7 with the laser beam L. [ .

It is preferable that the camera transferring unit of the mounting unit 131 and the head transferring unit of the hardening unit 132 operate in synchronization with each other. That is, when the mounting and hardening operation of one element 3 is completed, the camera of the mounting unit 131 and the laser head of the hardening unit 132 (136). At this time, the shifting pitch and the like may be changed. In accordance with the changed pitch, the camera of the mounting unit 131 and the laser head 136 of the hardening unit 132 must move at the same pitch together to shorten the processing time have. Therefore, the camera feeding part of the mounting unit 131 and the head feeding part of the curing unit 132 are synchronized with each other so that the camera of the mounting unit 131 and the laser head 136 of the curing unit 132 always move with the same pitch .

The protective film applying unit 140 applies a protective film 8 to the upper surface of the element 3 and the flexible substrate 4.

The protective film 8 applied to the element 3 and the flexible substrate 4 is formed to have a desired diameter of the connecting line 20 electrically connecting the electrode portions 3a and 3b of the element and the electrode line 5 Is used. When the electrode parts 3a and 3b and the electrode line 5 are directly connected without the protective film 8 in the state where the element 3 and the electrode line 5 are getting finer and smaller, (3a, 3b), which may cause a problem such as a short circuit.

A protective film 8 is first applied to the element 3 and the flexible substrate 4 and the protective film 8 is formed to have a desired diameter (for example, The connecting line 20 can be formed with a desired diameter by forming the connecting line 20 through the through hole 10 after forming the through hole 10 having a small size.

The drilling unit 150 irradiates the laser beam L to form a through hole 10 through the protective film 8. [

5, the drilling unit 150 includes a laser head 151 that receives the laser beam L output from the laser output unit 101 and irradiates the laser beam L toward the protective film 8, and the laser head 151 The through hole 10 is formed.

The through hole 10 formed by the drilling unit 150 includes a protective film portion on the upper side of the first electrode portion 3a of the element and a first electrode line electrically connected to the first electrode portion 3a of the electrode line The protective film portion on the upper side of the first electrode line 5a, the protective film portion on the upper side of the second electrode portion 3b of the element, and the protective film portion on the upper side of the second electrode line 5b electrically connected to the second electrode portion 3b of the electrode line Respectively.

The electrode connection unit 160 electrically connects the electrode portions 3a and 3b to the electrode lines 5 through the through holes 10. [ Referring to FIG. 6, a conductive material is injected using E-jet or the like to electrically connect the first electrode portion 3a of the device and the first electrode line 5a on the flexible substrate 4 through the through- And a connection line 20 for electrically connecting the second electrode portion 3b of the device and the second electrode line 5b on the flexible substrate 4 through the through hole 10, Can be formed.

The flexible substrate transfer unit 170 transfers the flexible substrate 4 in a roll-to-roll manner.

A flexible substrate supply roll 171 for supplying a flexible substrate 4 in the form of a roll is provided upstream of the patterning unit 110. A flexible substrate 4 is collected downstream of the electrode connection unit 160, A flexible substrate recovery roll 172 may be provided.

Therefore, the patterning unit 110, the hardener spray unit 120, the mounting and hardening unit 130, the protective film application unit 140, and the drilling (not shown) are provided between the flexible substrate supply roll 171 and the flexible substrate recovery roll 172. [ The unit 150 and the electrode connection unit 160 are sequentially installed and the entire selective transfer process can be sequentially performed while the flexible substrate 4 is transferred in a roll-to-roll manner.

2 to 6, a selective transfer method according to an embodiment of the present invention using the above-described selective transfer apparatus 100 will be described.

The selective transfer method according to this embodiment includes a patterning step, a hardener spraying step, a mounting and curing step, a protective film applying step, a drilling step, and an electrode connecting step.

The patterning step irradiates the laser beam L to the flexible substrate 4 on which the conductive thin film 4a is formed to form the mounting position 6 where the electrode lines 5 and the elements 3 are to be mounted. In order to form the electrode line 5, the conductive thin film 4a is irradiated with a laser beam L to etch the conductive thin film 4a formed on the flexible substrate 4 in a desired pattern to form the mounting position 6 The conductive thin film 4a formed on the flexible substrate 4 and a part of the flexible substrate 4 are etched by irradiating the laser beam L. [

The curing agent injecting step injects the curing agent 7, which is hardened when the laser beam L is irradiated, to the mounting position 6.

In the mounting and curing step, the element 3 is mounted on the mounting position 6, and the curing agent 7 is cured to fix the element 3 to the flexible substrate 4.

The mounting position 6 can be photographed using a camera and the device 3 and the mounting position 6 attached to the dummy substrate 1 can be aligned based on the obtained image. When the alignment of the element 3 and the mounting position 6 is completed, the element 3 is mounted on the mounting position 6 using the push member, and the camera is transferred to the next mounting position 6 using the camera transferring unit .

The position of the curing agent 7 sprayed on the mounting position 6 can be grasped by photographing the mounting position 6 using the camera. The element 3 is fixed to the flexible substrate 4 by aligning and aligning the laser head 136 to the lower side of the hardening agent 7 and hardening the hardening agent 7 by irradiating the hardening agent 7 with the laser beam L. [ .

The protective film applying step applies the protective film 8 to the upper surface of the element 3 and the flexible substrate 4. The protective film 8 applied to the element 3 and the flexible substrate 4 is formed to have a desired diameter of the connecting line 20 electrically connecting the electrode portions 3a and 3b of the element and the electrode line 5 Is used.

The drilling step irradiates the laser beam (L) to form a through hole (10) through the protective film (8). A protective film portion above the first electrode portion 3a of the device, a protective film portion above the first electrode line 5a to be electrically connected to the first electrode portion 3a of the electrode line, a second electrode portion 3b ), And a protective film portion on the upper side of the second electrode line 5b to be electrically connected to the second electrode portion 3b of the electrode line.

The electrode connection step electrically connects the electrode parts 3a and 3b to the electrode lines 5 through the through holes 10. [ A connection line 20 for electrically connecting the first electrode portion 3a of the device to the first electrode line 5a on the flexible substrate 4 is formed through the through hole 10, A connection line 20 for electrically connecting the second electrode portion 3b of the device and the second electrode line 5b on the flexible substrate 4 can be formed.

The detailed description of each step is substantially the same as the description of the corresponding unit in the selective transfer apparatus 100, and will be omitted to avoid redundant description.

FIG. 7 is a view illustrating a selective transfer apparatus according to another embodiment of the present invention, FIG. 8 is a view for explaining the functions of the first and second patterning units of the selective transfer apparatus of FIG. 7, FIG. 9 is a view for explaining the functions of the mounting and curing unit of the selective transfer apparatus of FIG. 7, FIG. 10 is a view for explaining the function of the drilling unit of the selective transfer apparatus of FIG. 7, Fig. 8 is a view for explaining the function of the electrode connection unit of the selective transfer apparatus. Fig.

In Figs. 7 to 11, the members denoted by the same reference numerals as those shown in Figs. 2 to 6 have the same configuration and function, and a detailed description thereof will be omitted.

7 to 11, the selective transfer apparatus 200 according to the present embodiment includes a laser output unit 101, a first patterning unit 210, a second patterning unit 216, A protective film application unit 140, a drilling unit 250, an electrode connection unit 260, and a flexible substrate transfer unit 170. The flexible substrate transfer unit 170 includes a flexible substrate transfer unit 170,

The laser output unit 101 outputs a laser beam L for processing the conductive thin films 4a and 4b or the flexible substrate 4. [ In this embodiment, although the laser output unit 101 having a wavelength of about 355 nm is used, it is also possible to use a laser output unit that outputs a laser beam having a different wavelength suitable for processing the conductive thin films 4a and 4b or the flexible substrate 4 have.

The laser beam L output from the laser output unit 101 is branched and provided to a first patterning unit 210, a second patterning unit 216, a mounting and curing unit 130 and a drilling unit 150 .

The first patterning unit 210 irradiates the upper surface side conductive thin film 4a of the flexible substrate 4 having the conductive thin films 4a and 4b on both sides thereof with the laser beam L to form the first electrode lines 5a, The mounting position 6 where the element 3 is mounted and the via hole 9 penetrating the flexible substrate 4 are formed.

8, the first patterning unit 210 includes a laser head 111 that receives the laser beam L output from the laser output unit 101 and irradiates the laser beam L toward the flexible substrate 4, The first electrode line 5a, the mounting position 6, and the via hole 9 are formed while the first electrode line 111 is moved.

In order to form the first electrode line 5a by using the first patterning unit 210, the conductive thin film 4a on the upper surface of the flexible substrate 4 is irradiated with a laser beam L, The conductive thin film 4a is etched in a desired pattern. At this time, only the conductive thin film 4a is etched so that the flexible substrate 4 is not damaged.

In order to form the mounting position 6 by using the first patterning unit 210, the conductive thin film 4a formed on the flexible substrate 4 and a part of the flexible substrate 4 are etched by irradiating the laser beam L, do. At this time, the mounting position 6 formed by the first patterning unit 210 may be formed to be recessed from the surface of the flexible substrate 4.

In order to form the via hole 9 by using the first patterning unit 210, a laser beam L is irradiated to etch through the conductive thin film 4a formed on the flexible substrate 4 and the flexible substrate 4 . At this time, the conductive thin film 4b formed under the flexible substrate 4 is not etched.

It is preferable that the number of times of irradiation of the laser beam L is set differently in the process of forming the first electrode line 5a, the mounting position 6, and the via hole 9. [ That is, in the process of forming the first electrode line 5a for etching only the conductive thin film 4a, the number of times of irradiation of the laser beam L is relatively minimized, and the conductive thin film 4a and a part of the flexible substrate 4 A via hole 9 for etching the conductive thin film 4a and the flexible substrate 4 is formed in the process of forming the mounting position 6 for etching the conductive thin film 4a with a relatively medium number of times of irradiation of the laser beam L. [ It is preferable that the number of irradiation of the laser beam L be relatively largest.

The second patterning unit 216 irradiates the laser beam L to the lower conductive thin film 4b of the flexible substrate 4 to penetrate the second electrode line 5b and the lower conductive thin film 4b, Thereby forming an exposure hole 6a that exposes the position 6.

Unlike the embodiment shown in FIG. 2, the second electrode line 5b is formed on the lower surface of the flexible substrate 4 in this embodiment. Therefore, in order to form the second electrode line 5b by using the second patterning unit 216, the laser beam L is irradiated to the conductive thin film 4b on the lower surface of the flexible substrate 4, The conductive thin film 4b is etched in a desired pattern. At this time, only the conductive thin film 4b is etched so that the flexible substrate 4 is not damaged, and the first electrode line 5a formed on the upper surface of the flexible substrate and the second electrode line 5b formed on the lower surface of the flexible substrate, Are preferably formed so as to intersect with each other.

Further, the second patterning unit 216 is used to form an exposure hole 6a through the lower side conductive thin film 4b. An exposure hole 6a penetrating the lower side conductive thin film 4b is formed below the mounting position 6 to grasp the position of the curing agent 7 injected to the mounting position 6 in the mounting and curing unit 130 to be described later. . At this time, it is preferable that only the conductive thin film 4b is etched so that the flexible substrate 4 is not damaged.

The hardener spray unit 120 injects the hardener 7, which hardens when the laser beam L is irradiated, onto the mounting position 6. An appropriate amount of the curing agent 7 is sprayed to fix the element 3 (for example, an LED element) to the mounting position 6 formed to be recessed from the surface of the flexible substrate 4. [

The mounting and curing unit 130 aligns the element 3 attached to the dummy substrate 1 with the mounting position 6 and mounts the element 3 on the mounting position 6, And irradiates the beam L to fix the element 3 to the flexible substrate 4. [ The structure and functions of the mounting and curing unit 130 of the embodiment shown in Fig. 2 are substantially the same as those of the mounting and curing unit 130 of the embodiment shown in Fig. 2, so repeated description will be omitted.

The protective film applying unit 140 applies a protective film 8 to the upper surface of the element 3 and the flexible substrate 4. The structure and function of the protective film application unit 140 of the embodiment shown in Fig. 2 are substantially the same as those of the protective film application unit 140 of the embodiment shown in Fig. 2, and a repeated description thereof will be omitted.

The drilling unit 250 irradiates the laser beam L to form a through hole 10 penetrating the protective film 8.

10, the drilling unit 250 includes a laser head 151 that receives the laser beam L output from the laser output unit 101 and irradiates the laser beam L toward the protective film 8, and the laser head 151 The through hole 10 is formed.

The through hole 10 formed by the drilling unit 250 includes a protection film portion on the upper side of the first electrode portion 3a of the element and a first electrode line electrically connected to the first electrode portion 3a of the electrode line 5a, the protective film portion above the second electrode portion 3b of the device, and the protective film portion above the via hole 9, respectively.

The electrode connection unit 260 electrically connects the electrode units 3a and 3b and the electrode lines 5a and 5b through the through holes 10. [ 11, a conductive material is injected using E-jet or the like to form a first electrode portion 3a of the device and a first electrode line 5a on the upper surface of the flexible substrate 4 through the through hole 10 The second electrode portion 3b of the element and the second electrode line 5b on the lower surface of the flexible substrate 4 are electrically connected to each other through the through hole 10 and the via hole 9. [ The connection line 20 can be formed.

The flexible substrate transfer unit 170 transfers the flexible substrate 4 in a roll-to-roll manner. The structure and function of the flexible substrate transfer unit 170 of the embodiment shown in FIG. 2 are substantially the same as those of the flexible substrate transfer unit 170 shown in FIG.

7 to 11, a selective transfer method according to another embodiment of the present invention using the above-described selective transfer apparatus 200 will be described.

The selective transfer method according to this embodiment includes a first patterning step, a second patterning step, a hardener spraying step, a mounting and curing step, a protective film applying step, a drilling step, and an electrode connecting step.

The first patterning step irradiates a laser beam L onto the upper surface side conductive thin film 4a of the flexible substrate 4 having the conductive thin films 4a and 4b formed on both surfaces thereof to form the first electrode line 5a, And a via hole 9 passing through the flexible substrate 4 are formed.

In order to form the first electrode line 5a, the conductive thin film 4a is irradiated with a laser beam L to etch the conductive thin film 4a formed on the flexible substrate 4 in a desired pattern, The conductive thin film 4a formed on the flexible substrate 4 and a part of the flexible substrate 4 are etched by irradiating the laser beam L to form the via hole 9. In order to form the via hole 9, The conductive thin film 4a formed on the flexible substrate 4 and the flexible substrate 4 are etched so as to penetrate through the conductive thin film 4a.

The second patterning step irradiates the laser beam L to the lower conductive thin film 4b of the flexible substrate 4 to pass through the second electrode line 5b and the lower conductive thin film 4b and to the mounting position 6 Is formed in the exposed hole 6a.

In order to form the second electrode line 5b, the conductive thin film 4b formed on the lower side of the flexible substrate 4 is irradiated with the laser beam L to the conductive thin film 4b on the lower surface of the flexible substrate 4, In order to form the exposure hole 9, a laser beam L is irradiated to etch the conductive thin film 4b formed on the lower side of the flexible substrate 4.

The curing agent injecting step injects the curing agent 7, which is hardened when the laser beam L is irradiated, to the mounting position 6.

In the mounting and curing step, the element 3 is mounted on the mounting position 6, and the curing agent 7 is cured to fix the element 3 to the flexible substrate 4.

The mounting position 6 can be photographed using a camera and the device 3 and the mounting position 6 attached to the dummy substrate 1 can be aligned based on the obtained image. When the alignment of the element 3 and the mounting position 6 is completed, the element 3 is mounted on the mounting position 6 using the push member, and the camera is transferred to the next mounting position 6 using the camera transferring unit .

The position of the curing agent 7 sprayed on the mounting position 6 can be grasped by photographing the mounting position 6 using the camera. The element 3 is fixed to the flexible substrate 4 by aligning and aligning the laser head 136 to the lower side of the hardening agent 7 and hardening the hardening agent 7 by irradiating the hardening agent 7 with the laser beam L. [ .

The protective film applying step applies the protective film 8 to the upper surface of the element 3 and the flexible substrate 4. The protective film 8 applied to the element 3 and the flexible substrate 4 is formed to have a desired diameter in a connecting line 20 for electrically connecting the electrode portions 3a and 3b of the element to the electrode lines 5a and 5b .

The drilling step irradiates the laser beam (L) to form a through hole (10) through the protective film (8). A protective film portion above the first electrode portion 3a of the device, a protective film portion above the first electrode line 5a to be electrically connected to the first electrode portion 3a of the electrode line, a second electrode portion 3b ), And the protective film portion above the via hole 9, respectively.

The electrode connection step electrically connects the electrode parts 3a and 3b and the electrode lines 5a and 5b through the through holes 10. [ A connection line 20 for electrically connecting the first electrode portion 3a of the device to the first electrode line 5a on the upper surface of the flexible substrate 4 is formed through the through hole 10, The connection line 20 for electrically connecting the second electrode portion 3b of the device to the second electrode line 5b on the lower surface of the flexible substrate 4 through the via hole 9 can be formed.

The detailed description of each step is substantially the same as the description of the corresponding unit in the selective transfer apparatus 200, and will be omitted in order to avoid redundant description.

The selective transfer apparatus and method of the present invention constructed as described above can transfer a high-performance device to a flexible substrate using a laser without using a chemical substance and realize the transfer process in a single inline system, It is possible to obtain an advantageous effect that the processing time can be shortened.

In addition, the selective transfer apparatus and method of the present invention constructed as described above are characterized in that a through hole is formed in a protective film and the electrode portion of the element is electrically connected to the electrode line of the flexible substrate through the through hole, It is possible to obtain an effect that can be improved.

In addition, the selective transfer apparatus and method of the present invention constructed as described above are characterized in that the camera for aligning the element and the mounting position in the mounting and curing process and the laser head for irradiating the laser beam to the curing agent injected at the mounting position are synchronized The effect of reducing the processing time can be obtained.

The scope of the present invention is not limited to the above-described embodiments and modifications, but can be implemented in various forms of embodiments within the scope of the appended claims. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the appended claims.

100: Selective transfer device
101: laser output section
110: patterning unit
120: Curing agent injection unit
130: mounting and curing unit
140: protective film application unit
150: Drilling unit
160: electrode connecting unit

Claims (20)

A selective transfer apparatus for selectively removing a plurality of elements formed on a wafer substrate using a dummy substrate and selectively transferring the separated elements to a flexible substrate,
A patterning unit for irradiating a flexible substrate on which a conductive thin film is formed with a laser beam to form an electrode line and a mounting position at which the device is to be mounted;
A curing agent injection unit that injects a curing agent that is cured when the laser beam is irradiated onto the mounting position;
A mounting and curing unit for aligning the mounting position with an element attached to the dummy substrate to mount the element at the mounting position and fixing the element to the flexible substrate by irradiating a laser beam to the curing agent;
A protective film application unit for applying a protective film to the upper surface of the element and the flexible substrate;
A first electrode line of the device, a first electrode line electrically connected to the first electrode line of the electrode line, a second electrode line of the device, and a second electrode line of the second line, A drilling unit forming a through hole passing through the protective film on the upper side of the second electrode line to be electrically connected to the electrode part;
And an electrode connection unit electrically connecting the first electrode unit and the first electrode line through the through hole and electrically connecting the second electrode unit and the second electrode line through the through hole, Wherein the transferring device is a transferring device. The method according to claim 1,
Wherein the mounting position is formed by the patterning unit so as to be recessed from the surface of the flexible substrate. 3. The method of claim 2,
In the patterning unit,
Wherein the number of times of irradiation of the laser beam for forming the electrode line and the number of times of irradiation of the laser beam for forming the mounting position are set to be different from each other. The method according to claim 1,
And a flexible substrate transfer unit having a flexible substrate supply roll for supplying the flexible substrate in a roll form and a flexible substrate recovery roll for recovering the flexible substrate in a roll form,
Wherein the flexible substrate is transported in a roll-to-roll manner. The method according to claim 1,
And a laser output unit for outputting the laser beam,
Wherein the laser beam output from the laser output unit is branched to the patterning unit, the mounting and hardening unit, and the drilling unit. The method according to claim 1,
Wherein the mounting and curing unit comprises:
A mounting unit provided on the flexible substrate and having a camera for aligning the element and the mounting position, and a camera transferring unit for transferring the camera; And
And a curing unit provided below the flexible substrate and including a laser head for irradiating a laser beam onto the curing agent injected at the mounting position and a head transferring unit for transferring the laser head,
Wherein the camera transferring unit and the head transferring unit operate in synchronism with each other. A selective transfer apparatus for selectively removing a plurality of elements formed on a wafer substrate using a dummy substrate and selectively transferring the separated elements to a flexible substrate,
A first patterning unit for forming a first electrode line, a mounting position at which the device is to be mounted, and a via hole passing through the flexible substrate by irradiating a laser beam onto the upper surface side conductive thin film of the flexible substrate having the conductive thin film formed on both surfaces thereof;
A second patterning unit for irradiating a laser beam to a lower surface conductive thin film of the flexible substrate to form an exposure hole passing through the second electrode line and the lower surface conductive thin film and exposing the mounting position;
A curing agent injecting unit for injecting a curing agent to be cured when the laser beam is irradiated onto a mounting position of the flexible substrate;
A mounting and curing unit for aligning the mounting position with the element attached to the dummy substrate to mount the element at the mounting position and fixing the element to the flexible substrate by irradiating a laser beam to the curing agent;
A protective film application unit for applying a protective film to the upper surface of the element and the flexible substrate;
A method of manufacturing a semiconductor device, comprising: irradiating a laser beam to form a first electrode portion of the device, a first electrode line to be electrically connected to the first electrode portion, a second electrode portion of the device, Respectively;
An electrode connecting unit electrically connecting the first electrode unit and the first electrode line through the through hole and electrically connecting the second electrode unit and the second electrode line through the through hole and the via hole; And a second transfer unit for transferring the second transfer material. 8. The method of claim 7,
Wherein the mounting position is formed by the first patterning unit so as to be recessed from the surface of the flexible substrate. 9. The method of claim 8,
In the first patterning unit,
Characterized in that the number of times of irradiation of the laser beam for forming the first electrode line, the number of times of irradiation of the laser beam for forming the mounting position, and the number of times of irradiation of the laser beam for forming the via hole are set to be different from each other, Device. 8. The method of claim 7,
And a flexible substrate transfer unit having a flexible substrate supply roll for supplying the flexible substrate in a roll form and a flexible substrate recovery roll for recovering the flexible substrate in a roll form,
Wherein the flexible substrate is transported in a roll-to-roll manner. 8. The method of claim 7,
And a laser output unit for outputting the laser beam,
Wherein the laser beam output from the laser output unit is branched to the first patterning unit, the second patterning unit, the mounting and hardening unit, and the drilling unit. 8. The method of claim 7,
Wherein the mounting and curing unit comprises:
A mounting unit provided on the flexible substrate and having a camera for aligning the element and the mounting position, and a camera transferring unit for transferring the camera; And
And a curing unit provided below the flexible substrate and including a laser head for irradiating a laser beam onto the curing agent injected at the mounting position and a head transferring unit for transferring the laser head,
Wherein the camera transferring unit and the head transferring unit operate in synchronism with each other. A selective transfer method for selectively removing a plurality of elements formed on a wafer substrate using a dummy substrate and selectively transferring the separated elements to a flexible substrate,
A patterning step of irradiating a flexible substrate on which a conductive thin film is formed with a laser beam to form an electrode line and a mounting position at which the device is to be mounted;
A curing agent spraying step of spraying a curing agent to be cured when the laser beam is irradiated onto the mounting position;
A mounting and curing step of aligning the mounting position with an element attached to the dummy substrate to mount the element at the mounting position and fixing the element to the flexible substrate by irradiating the curing agent with a laser beam;
Applying a protective film to an upper surface of the element and the flexible substrate;
A first electrode line of the device, a first electrode line electrically connected to the first electrode line of the electrode line, a second electrode line of the device, and a second electrode line of the second line, A drilling step of forming a through hole passing through the protective film on the upper side of the second electrode line to be electrically connected to the electrode part;
And electrically connecting the first electrode unit and the first electrode line through the through hole and electrically connecting the second electrode unit and the second electrode line through the through hole, Lt; / RTI > 14. The method of claim 13,
Wherein in the patterning step, the mounting position is formed to be recessed from the surface of the flexible substrate. 15. The method of claim 14,
In the patterning step,
Wherein the number of times of irradiation of the laser beam for forming the electrode line and the number of times of irradiation of the laser beam for forming the mounting position are set to be different from each other. 14. The method of claim 13,
The mounting and curing step may comprise:
A camera for aligning the device with the mounting position is transferred, and a laser head for irradiating a laser beam onto the curing agent injected to the mounting position is transferred,
Wherein the camera and the laser head operate in synchronism with each other. A selective transfer method for selectively removing a plurality of elements formed on a wafer substrate using a dummy substrate and selectively transferring the separated elements to a flexible substrate,
A first patterning step of forming a first electrode line, a mounting position at which the device is to be mounted, and a via hole passing through the flexible substrate by irradiating a laser beam onto the upper surface side conductive thin film of the flexible substrate having the conductive thin film formed on both surfaces thereof;
A second patterning step of irradiating a laser beam to the lower surface conductive thin film of the flexible substrate to form an exposure hole through the second electrode line and the lower surface conductive thin film and exposing the mounting position;
A curing agent spraying step of spraying a curing agent, which hardens when a laser beam is irradiated, onto a mounting position of the flexible substrate;
A mounting and curing step of aligning the mounting position with an element attached to the dummy substrate to mount the element at the mounting position and fixing the element to the flexible substrate by irradiating the curing agent with a laser beam;
Applying a protective film to an upper surface of the element and the flexible substrate;
A second electrode portion of the device, and a second electrode portion electrically connected to the first electrode portion, the second electrode portion of the device, and the second electrode portion electrically connected to the second electrode portion by irradiating a laser beam, A drilling step of forming a through hole passing through the protective film on the upper side of the electrode line, respectively;
An electrode connection step of electrically connecting the first electrode unit and the first electrode line through the through hole and electrically connecting the second electrode unit and the second electrode line through the through hole and the via hole; ≪ / RTI > 18. The method of claim 17,
Wherein in the first patterning step, the mounting position is formed to be recessed from the surface of the flexible substrate. 19. The method of claim 18,
In the first patterning step,
Characterized in that the number of times of irradiation of the laser beam for forming the first electrode line, the number of times of irradiation of the laser beam for forming the mounting position, and the number of times of irradiation of the laser beam for forming the via hole are set to be different from each other, Way. 18. The method of claim 17,
The mounting and curing step may comprise:
A camera for aligning the device with the mounting position is transferred, and a laser head for irradiating a laser beam onto the curing agent injected to the mounting position is transferred,
Wherein the camera and the laser head operate in synchronism with each other.
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