KR20160113534A - Film Forming Apparatus - Google Patents

Abstract

The present invention provides a film forming device capable of achieving the uniform distribution of a film forming material on a film of a film forming subject. The film forming device, in the device for attaching evaporative particles (Mb) of the film forming material by heating and evaporating the film forming material (Ma) with plasma beams inside a vacuum chamber (10), includes: a plasma source (7) generating the plasma beams inside the vacuum chamber (10); a main hearth (17) which is a main anode guiding the plasma beams to the film forming material or where the plasma beams are guided when the film forming material functioning as an evaporation source is charged; a ring hearth (6) which is an auxiliary anode guiding the plasma beams and arranged around the main hearth; and an evaporation direction adjusting unit (21) changing a direction of the evaporative particles evaporated from the evaporation source.

Description

{Film Forming Apparatus}

The present application claims priority based on Japanese Patent Application No. 2013-110963, filed on May 27, 2013. The entire contents of which are incorporated herein by reference.

The present invention relates to a film forming apparatus for depositing particles of a film forming material on an object to be formed by heating and evaporating a film forming material by a plasma beam in a vacuum chamber.

As a film forming apparatus for forming a film on the surface of a film forming object, for example, an ion plating method is used. In the ion plating method, particles of a film forming material evaporated are diffused in a vacuum chamber to adhere to the surface of an object to be film-formed. This film forming apparatus includes a plasma source for generating a plasma beam, a main anode serving as a main anode for supporting the film forming material, and a ring hole serving as a secondary anode surrounding the main hearth (see, for example, Patent Document 1 Reference). In the film forming apparatus described in Patent Document 1, two sets of plasma sources, main haas, and ring haas, for example, are provided, whereby the film forming material is evaporated from two evaporation sources to widen the film forming range.

Prior art literature

(Patent Literature)

Patent Document 1: JP-A-9-256147

Here, it is required to improve the film quality of the film-forming material adhering to the object to be film-formed. For example, the film quality of a specific region of an object to be formed can be improved by changing film forming conditions such as the oxygen concentration in the vacuum chamber and the state of plasma. However, the difference in the film quality between the specific region where the film quality is improved and the peripheral region thereof is increased, and the distribution of the film quality may become uneven.

It is therefore an object of the present invention to provide a film forming apparatus capable of uniformizing the distribution of film quality within the film forming surface of a film forming object.

A film forming apparatus according to the present invention is a film forming apparatus for depositing evaporation particles of a film forming material on an object to be formed by heating a film forming material by a plasma beam in a vacuum chamber and evaporating the plasma so as to form a plasma beam in a vacuum chamber And a main anode which is a main anode in which a plasma beam is induced or a secondary anode which is arranged around the main hearth and which induces a plasma beam, And an evaporation direction adjusting unit for changing the direction of the evaporation particles evaporating from the evaporation source every predetermined time.

This film forming apparatus is provided with the evaporation direction adjusting section for changing the direction of the evaporation particles of the film forming material evaporating from the evaporation source every predetermined time so that the direction of the evaporation particles evaporating from the evaporation source is changed in time, Can be changed. Since the activity of the evaporation particles varies depending on the evaporation particles, by changing the diffusion state of the evaporation particles, it is possible to disperse the evaporation particles having high activity to widen the region with good film quality. Thereby, biasing of positions where vapor particles with high activity are attached can be suppressed, and uniform distribution of film quality can be achieved.

Here, the evaporation direction adjusting section may adjust the diffusion width of the evaporation particles evaporating from the evaporation source. It is possible to change the diffusion width of the evaporation particles by changing the diffusion width of the evaporation particles at predetermined time intervals and to suppress biases in positions where the evaporation particles with high activity are attached and to make the distribution of the film quality uniform.

The film forming apparatus may include a plurality of sets of plasma sources, main hearth and ring hearth, and the evaporation direction adjusting section may adjust the diffusion width periodically to shift the phase of the change in diffusion width in the adjacent evaporation sources. This makes it possible to change the diffusion state so that the diffusion width of the evaporation particles is not the same in the adjacent evaporation sources. For example, evaporation particles evaporated from one evaporation source may be adhered to evaporation particles evaporated from one evaporation source in a region of an object to be film formation relative to a position corresponding to the center of the adjacent evaporation source, It is possible to suppress unevenness in the position where the evaporation particles with high activity are attached and to equalize the distribution of the film quality.

Further, the evaporation direction adjusting section may adjust the direction of the diffusion center of the evaporation particles evaporating from the evaporation source. The diffusion state of the evaporated particles can be changed by changing the direction of the diffusion center of the evaporated particles every predetermined time so that the unevenness of the position where the highly active evaporated particles adhere is suppressed and the distribution of the film quality can be made uniform. However, the direction of the diffusion center refers to the traveling direction of the evaporated particles at the center of the diffusion width of the evaporated particles.

The film forming apparatus includes a plurality of sets of a plasma source, a main hearth, and a ring hearth, and the evaporation direction adjustment section adjusts the direction of the diffusion center periodically so that the phases of the diffusion center directions in the adjacent evaporation sources are the same do. This makes it possible to change the diffusion state so that the directions of the diffusion centers of the evaporation particles evaporating from the adjacent evaporation sources are the same. For example, in the region of the object to be coated relative to the position corresponding to the center of the adjacent evaporation source, evaporation particles are prevented from reaching from both evaporation sources at the same time, Thus, the distribution of the film quality can be made uniform.

Further, the evaporation direction adjusting section may have an auxiliary coil superposed on the ring hearth, and the direction of the diffusion center may be changed by changing the magnetic field formed by the auxiliary coil. Thus, the magnetic field can be changed by changing the direction of the current flowing through the auxiliary coil, so that the direction of the diffusion center of the evaporated particles can be easily changed.

Here, the auxiliary coils include a pair of inner coils disposed on both sides of the evaporation source, as viewed from the axial direction of the ring hearth, and a pair of outer coils disposed on the outer sides of the pair of inner coils, The direction of the magnetic field by the pair of inner coils and the direction of the magnetic field by the pair of outer coils may be reversed. The reaching distance of the magnetic field due to the pair of inner coils disposed at a position close to the evaporation source is shorter than the reaching distance of the magnetic field caused by the pair of outer coils disposed at positions away from the evaporation source. In other words, it is possible to generate a magnetic field by the pair of inner coils at a position near the evaporation source in the traveling direction of the evaporation particles, and to generate a magnetic field by the pair of outer coils at a position far from the evaporation source. Thus, in the vicinity of the evaporation source, a magnetic field is generated by the pair of inner coils so as to eliminate the influence of the magnetic field caused by the pair of outer coils, and at a position away from the evaporation source, The direction of the diffusion center of the particles can be changed.

According to the present invention, the distribution of the film quality in the film-forming surface of the object to be film-formed can be made uniform.

1 is a cross-sectional view showing a configuration of an embodiment of a film forming apparatus of the present invention.
2 is a schematic diagram showing a magnetic field in the vicinity of the main hall.
3 is a schematic diagram showing a temporal change in the diffusion width of the film-forming material particles.
4 is a plan view showing a ring hear of the film forming apparatus according to the second embodiment of the present invention.
5 is a sectional view taken along the line VV shown in Fig.
Fig. 6 is a schematic diagram showing a temporal change in the diffusion center direction of the film-forming material particles.
7 is a diagram showing the magnetic field strength by the inner coil and the outer coil.

Hereinafter, one embodiment of a film forming apparatus according to the present invention will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and redundant explanations are omitted.

The film forming apparatus 1 shown in Fig. 1 is an ion plating apparatus used in so-called ion plating method. However, for convenience of explanation, Fig. 1 shows an XYZ coordinate system. The Y axis direction is a direction in which a film formation object to be described later is conveyed. The X-axis direction is the direction in which the object to be film-formed and the Haas mechanism described below face each other. The Z-axis direction is a direction orthogonal to the X-axis direction and the Y-axis direction.

(First Embodiment)

The film forming apparatus 1 is a film forming apparatus that forms a film forming object 11 in an inclined state from a state in which the object to be formed 11 is erected or erected so that the film thickness direction of the object to be formed 11 is a horizontal direction (X- 11 are placed in the vacuum chamber 10 and transported. In this case, the X-axis direction is also the horizontal direction, the plate thickness direction of the object to be formed 11, the Y-axis direction is the horizontal direction, and the Z-axis direction is the vertical direction. On the other hand, an embodiment of the film forming apparatus according to the present invention may be a so-called horizontal type film forming apparatus in which an object to be formed is placed and conveyed in a vacuum chamber so that the plate thickness direction of the object to be film-formed is substantially vertical. In this case, the Z-axis and Y-axis directions are horizontal, and the X-axis direction is also the vertical direction. However, in the following embodiments, one embodiment of the film forming apparatus of the present invention will be described taking the vertical case as an example.

The film forming apparatus 1 is provided with a gasket 2, a transport mechanism 3, a ring hearth 6, a plasma source 7, a pressure adjusting device 8 and a vacuum chamber 10.

The vacuum chamber 10 includes a transport chamber 10a for transporting a film formation object 11 on which a film of a film formation material is formed, a film formation chamber 10b for diffusing the film formation material Ma, And a plasma inlet 10c for receiving the irradiated plasma beam P in the vacuum chamber 10. [ The transport chamber 10a, the film formation chamber 10b, and the plasma inlet 10c communicate with each other. The transport chamber 10a is set along a predetermined transport direction (arrow A in the drawing) (Y axis). The vacuum chamber 10 is made of a conductive material and is connected to the ground potential.

The transport mechanism 3 transports the object to be film formation supporting member 16 that supports the object to be film-formed 11 in the transport direction A while facing the film formation material Ma. For example, the support member 16 is a frame body that supports the outer peripheral edge of the object to be formed. The transport mechanism 3 is constituted by a plurality of transport rollers 15 provided in a transport chamber 10a. The conveying rollers 15 are arranged at regular intervals along the conveying direction A and conveyed in the conveying direction A while supporting the object to be coated 16. However, plate-shaped members such as a glass substrate and a plastic substrate are used as the film formation object 11, for example.

The plasma source 7 is of a pressure gradient type and its main body portion is connected to the deposition chamber 10b through a plasma inlet 10c provided on the side wall of the deposition chamber 10b. The plasma source 7 generates a plasma beam P in the vacuum chamber 10. The plasma beam P generated in the plasma source 7 is emitted from the plasma inlet 10c into the deposition chamber 10b. The emission direction of the plasma beam P is controlled by a steering coil (not shown) provided in the plasma inlet 10c.

The pressure regulating device 8 is connected to the vacuum chamber 10 to adjust the pressure in the vacuum chamber 10. [ The pressure regulating device 8 has, for example, a depressurizing portion such as a turbo molecular pump or a cryopump and a pressure measuring portion for measuring the pressure in the vacuum chamber 10. [

The Haas mechanism 2 is a mechanism for holding the film forming material Ma. The Haas mechanism 2 is provided in the deposition chamber 10b of the vacuum chamber 10 and arranged in the negative direction in the X axis direction as viewed from the transport mechanism 3. [ The Haas mechanism 2 includes a main anode for leading the plasma beam P emitted from the plasma source 7 to the film forming material Ma or a main anode for guiding the plasma beam P emitted from the plasma source 7, And has a main hose 17 which is an in-line main hose.

The main hearth 17 has a cylindrical charging part 17a extending in the normal direction in the X axis direction in which the film forming material Ma is filled and a flange part 17b projecting from the charging part 17a. The main hearth 17 attracts the plasma beam P because it is kept at a constant potential with respect to the ground potential of the vacuum chamber 10. A through hole 17c for filling the film forming material Ma is formed in the charging portion 17a of the mainhose 17 into which the plasma beam P is incident. The tip portion of the film forming material Ma is exposed to the film forming chamber 10b at one end of the through hole 17c.

The ring hearth 6 is an auxiliary anode having an electromagnet for inducing the plasma beam P. The ring hearth 6 is disposed around the charging portion 17a of the main hearth 17 for supporting the film forming material Ma. The ring hearth 6 has an annular coil 9 and an annular permanent magnet 20 and an annular container 12. The coil 9 and the permanent magnet 20 are accommodated in the container 12 . The ring hearth 6 is arranged in the direction of the plasma beam P incident on the film forming material Ma or in the direction of the plasma beam P incident on the main hearth 17 in accordance with the magnitude of the current flowing through the coil 9. [ Lt; / RTI > In addition, the permanent magnet 20 can adjust the magnetic force so as to obtain a desired film thickness distribution.

As the film forming material Ma, a transparent conductive material such as ITO or ZnO, or an insulating sealing material such as SiON is exemplified. When the film forming material Ma is made of an insulating material and the main beam 17 is irradiated with the plasma beam P, the main haath 17 is heated by the current from the plasma beam P to form the film forming material Ma (Vaporized particles) Mb ionized by the plasma beam P are diffused into the deposition chamber 10b. When the film forming material Ma is made of a conductive material and the main beam 17 is irradiated with the plasma beam P, the plasma beam P is directly incident on the film forming material Ma, And the film forming material particles Mb ionized by the plasma beam P are diffused into the deposition chamber 10b. The film forming material particles Mb diffused into the deposition chamber 10b move in the X axis positive direction of the deposition chamber 10b and adhere to the surface of the object 11 in the transport chamber 10a. However, the film forming material Ma is a solid material molded into a cylindrical shape of a predetermined length, and a plurality of film forming materials Ma are filled in the Haas mechanism 2 at one time. The film forming material Ma is discharged from the Haas mechanism 17 in accordance with the consumption of the film forming material Ma so that the leading end portion of the film forming material Ma on the best- 2 from the X-axis direction side.

The film forming apparatus 1 has a plurality of sets of combinations of the Haas mechanism 2, the ring hearth 6, and the plasma source 7, and has a plurality of evaporation sources. A plurality of the Haas mechanisms 2 are arranged at regular intervals in the Z-axis direction. The ring hearth 6 and the plasma source 7 are disposed corresponding to the Haas mechanism 2, respectively. The film forming apparatus 1 can diffuse the film forming material particles Mb by evaporating the film forming material Ma from a plurality of positions in the Z-axis direction.

Here, the film forming apparatus 1 is provided with an evaporation direction adjusting unit 21 for changing the direction of the film forming material particles Mb evaporating from the film forming material Ma of the evaporation source at predetermined time intervals. The evaporation direction adjusting section 21 has an annular coil 9 of the ring hearth 6 and a hearth coil power supply section 22 for supplying current to the coil 9. [ The helical-coil power supply unit 22 supplies a current obtained by superimposing an alternating current on a direct current to the coil 9. [ The helical-coil power supply unit 22 changes the magnetic field near the main hearth 17 by changing the current value alternately to 20A or 30A at predetermined time intervals to change the diffusion width of the film-forming material particles Mb. The period for switching the current value may be selected in accordance with the conveying speed of the object 11 to be formed and the moving time of the film forming material particles Mb from the evaporation source to the object 11 to be film-formed. The current value supplied to the coil 9 is not limited to 20A and 30A, and other values of current may be applied.

Fig. 2 shows the directions of the magnetic field and the film-forming material particles Mb in the vicinity of the main hearth. 2 (a) shows a case where a current of 20 A is supplied to the coil 9, and Fig. 2 (b) shows a case where a current of 30 A is supplied to the coil 9. The magnetic field generated by the coil 9 is strengthened by raising the current flowing through the coil 9 to intensify the directivity of the film forming material particles Mb in the straight forward direction (X axis direction) to narrow the diffusion width of the film forming material particles Mb . On the other hand, by weakening the magnetic field by the coil 9 by lowering the current value flowing through the coil 9, the directivity in the direction in which the film-forming material particles Mb proceeds can be weakened, and the diffusion width of the film- .

The evaporation direction adjustment unit 21 controls the coils 9 of the ring hearths 6 adjacent to each other to have different current values. The evaporation direction adjusting section 21 is arranged so that the current value of the coil 9 of one of the ring hearths 6 is 20 A and the evaporation direction adjusting section 21 of the other ring hearth 6 adjacent to the one ring hearth 6, And the current value of the coil 9 is 30A. In addition, the evaporation direction adjustment unit 21 makes the same timing for switching the current values so that the current values of the adjacent coils 9 do not become the same.

3 shows a temporal change in the diffusion width of the film-forming material particles Mb. Fig. 3 shows a case in which three evaporation sources are provided in the Z-axis direction, and shows a state in which time advances in the order of Figs. 3 (a) to 3 (c). In the state (first state) shown in Fig. 3 (a), the helical-coil power supply unit 22 causes a current of 20A to flow through the coil 9 of the ringhash 6 at the center, A current of 30 A is caused to flow through the coil 9 of the first and second electrodes 6 and 6. At this time, the diffusion width Wa of the film forming material particles Mb in the case of 20A at the center is wider than the diffusion width Wb of the film forming material particles Mb in the case of 30A adjacent to the outside.

Next, in the state (second state) shown in Fig. 3 (b), the electric power source part 22 of the harness coil causes a current of 30 A to flow through the coil 9 of the central ring hearth 6, And a current of 20 A is caused to flow through the coil 9 of the ring hearth 6. At this time, the diffusion width Wb of the film forming material particles Mb in the case of 30A at the center is narrower than the diffusion width Wa of the film forming material particles Mb in the case of 20A adjacent to the outside. The state (first state) shown in FIG. 3 (c) is the same as the state shown in FIG. 3 (a), and the current value is periodically switched by repeating the first state and the second state, The diffusion width of the film forming material particles Mb is changed.

Next, the operation of the film forming apparatus 1 according to the present embodiment will be described.

The film forming apparatus 1 performs film formation while conveying the object to be film-formed 11. When film formation is performed, the film formation apparatus 1 irradiates the plasma beam P from the plasma source 7 to heat the film formation material Ma to evaporate. The film forming material particles (Mb) evaporated from the film forming material (Ma) spread by spreading at a predetermined angle from the evaporation source. Since the electric current flowing through the coil 9 can be periodically switched, the magnetic field in the vicinity of the main hearth 17 is adjusted to change the direction of the film-forming material particles Mb.

According to the film forming apparatus 1, the diffusion state can be changed by periodically changing the direction of the film forming material particles Mb evaporating from the evaporation source. Since the activity of the film forming material particles Mb differs depending on the film forming material particles Mb, by dispersing the film forming material particles Mb having high activity by changing the diffusion state of the film forming material particles Mb, You can spread it. Thus, biasing of the position where the film-forming material particles (Mb) having high activity is attached can be suppressed, and the distribution of the film quality can be made uniform.

The region having a good film quality means, for example, a region having a low resistance value of the transparent conductive film and a region having a high transparency when a transparent conductive film is formed on a substrate, which is an object of film formation. In the conventional film forming apparatus, for example, the range of the resistance value is within 5% from the reference value. In the film forming apparatus 1, the range of the resistance value can be suppressed within 3% from the reference value.

In the film forming apparatus 1, it is possible to adjust the diffusion states of the film-forming material particles Mb so that adjacent evaporation sources are not equal to each other, with a plurality of evaporation sources. For example, after depositing the film forming material particles (Mb) evaporated from one of the evaporation sources in the region of the object to be film-forming 11 which is opposed to the position corresponding to the center of the adjacent evaporation source, It is possible to adhere the material particles (Mb), thereby restraining bias in the position where the film-forming material particles (Mb) having high activity are attached, and making the distribution of the film quality uniform.

(Second Embodiment)

The film forming apparatus according to the second embodiment is different from the film forming apparatus 1 according to the first embodiment in that the structure of the evaporation direction adjusting section 40 is different and the structure of the ring hearth 41 is different from that Do. However, the same description as the first embodiment will be omitted. The evaporation direction adjusting unit 40 can periodically change the direction of the diffusion center of the film forming material particles Mb evaporating from the evaporation source. As shown in Figs. 4 and 5, the ring hearth 41 has an auxiliary coil 46 superimposed on the ring-shaped permanent magnet 20. The auxiliary coil 46 has a pair of inner coils 42 and 43 and a pair of outer coils 44 and 45. 5, the illustration of the case 12 of the ring hearth 41 is omitted. The ring hearth 41 has a coil 9, a permanent magnet 20 and an auxiliary coil 46 in a case 12.

The auxiliary coil 46 is disposed on a surface of the permanent magnet 20 opposite to the coil 9 (the surface on the side on which the film formation object is disposed). The pair of inner coils 42 and 43 are disposed on both sides in the Z-axis direction with the evaporation source interposed therebetween when viewed from the axial direction of the ring hearth 41. 4 and 5, the inner coil 42 is disposed on the left side and the inner coil 43 is disposed on the right side. The inner coils 42 and 43 are substantially fan-shaped planar coils along the circumferential direction of the annular permanent magnet 20. The axial directions of the inner coils 42 and 43 are arranged along the X-axis direction.

The pair of outer coils 44 and 45 are disposed on the outer sides of the pair of inner coils 42 and 43 on both sides in the Z axis direction with the evaporation source interposed therebetween as viewed from the axial direction of the ring hearth 41 have. 4 and 5, the outer coil 44 is disposed on the left side and the outer coil 45 is disposed on the right side. The outer coils 44 and 45 are substantially fan-shaped planar coils along the circumferential direction of the annular permanent magnet 20. The axial directions of the outer coils 44 and 45 are arranged along the X-axis direction.

The evaporation direction adjustment unit 40 is provided with an auxiliary coil power supply unit 47 for supplying an alternating current to the auxiliary coil 46. [ The auxiliary coil power supply unit 47 supplies the alternating current so as to generate a magnetomotive force in the opposite direction between the pair of inner coils 42 and 43 and the pair of outer coils 44 and 45.

For example, when the upper side (the object to be film-formed) of the inner coil 42 is the N pole and the lower side is the S pole, the upper side of the inner coil 43 is the S pole and the lower side is the N pole, Supplies an electric current such that the upper side of the outer coil 44 is the S pole, the lower side is the N pole, the upper side of the outer coil 45 is the N pole, and the lower side is the S pole. At this time, a magnetic field in the right direction from the inner coil 42 to the inner coil 43 is formed by the pair of inner coils 42, 43, and the outer coils 44, A magnetic field in the left direction from the coil 45 to the outer coil 44 is formed. The magnetic field formed by the inner coils 42 and 43 and the magnetic field formed by the outer coils 44 and 45 on the central axis CL of the ring hearth 41 are generated in the vicinity of the auxiliary coils 46, Is canceled. The influence of the magnetic field formed by the outer coils 44 and 45 is strongly exerted on the center axis CL of the ring hearth 41 at a position spaced upward (X-axis direction) from the auxiliary coil 46 A magnetic field in the left direction is formed. Since the film forming material particles Mb evaporating from the evaporation source proceed sloping leftward from the X axis direction, the direction of the diffusion center of the film forming material particles Mb can be directed to the left.

When the upper side of the inner coil 42 is the S pole and the lower side is the N pole and the upper side of the inner coil 43 is the N pole and the lower side is the S pole, the auxiliary coil power supply unit 47 is connected to the outer coil 44, The upper side of the outer coil 45 is the N pole, the lower side is the S pole, the upper side of the outer coil 45 is the S pole, and the lower side is the N pole. At this time, a magnetic field in the left direction from the inner coil 43 to the inner coil 44 is formed by the pair of inner coils 42, 43, and the outer coils 44, A magnetic field in the right direction from the coil 44 to the outer coil 45 is formed. The magnetic field formed by the inner coils 42 and 43 and the magnetic field formed by the outer coils 44 and 45 on the central axis CL of the ring hearth 41 are generated in the vicinity of the auxiliary coils 46, Is canceled. At a position spaced upward from the auxiliary coil 46 on the center axis CL of the ring hearth 41, since the magnetic field formed by the outer coils 44 and 45 is strongly influenced, A magnetic field is formed. The film forming material particles Mb which evaporate from the evaporation source proceed sloping from the X-axis direction to the right, so that the direction of the diffusion center of the film forming material particles Mb can be directed to the right.

Fig. 6 shows a temporal change in the direction of the diffusion center of the film-forming material particles Mb. Fig. 6 shows a case in which three evaporation sources are provided in the Z-axis direction, and shows a state in which time advances in the order of Figs. 6 (a) to 6 (c). In the state shown in Fig. 6 (a), the direction of the diffusion center of the film-forming material particles Mb is directed to the left. Next, in the state shown in Fig. 6 (b), the direction of the diffusion center of the film-forming material particles Mb is directed to the right. In the state shown in Fig. 6 (c), the state is the same as that shown in Fig. 6 (a), and the direction of the diffusion center of the film-forming material particles Mb is directed to the left. The evaporation direction adjustment unit 40 adjusts the timing by making the phases of the changes the same so that the directions of the diffusion centers of the film forming material particles Mb are the same in a plurality of adjacent evaporation sources. In this way, the evaporation direction adjustment unit 40 can change the direction of the diffusion center of the film-forming material particles Mb to the left and right (Z-axis direction) by periodically switching the current supplied to the auxiliary coil 46 .

7 shows the strength H ₁ of the magnetic field formed on the center axis CL of the ring hearth 41 by the pair of inner coils 42 and 43 and the strength H ₁ of the magnetic field formed on the pair of outer coils 44 and 45 The intensity H ₂ of the magnetic field formed on the center axis CL of the ring hearth 41 and the intensity H ₃ of the composite magnetic field formed on the center axis CL of the ring hearth 41 have. The strength (H ₃ ) of the composite magnetic field is a composite of the magnetic field strength (H ₁ ) and the magnetic field strength (H ₂ ). The vertical axis shown in Fig. 7 represents the distance from the auxiliary coil 46, and the horizontal axis represents the intensity of the magnetic field along the Z-axis direction. 7, the magnetic field by the pair of inner coils 42 and 43 is the left direction, and the magnetic field by the pair of outer coils 44 and 45 is the right direction.

For example, the peak H _1P of the magnetic field strength H ₁ by the pair of inner coils 42 and 43 is located 6 cm from the evaporation source, and the magnetic field H _{1P by the} pair of outer coils 44 and 45 The peak (H _2P ) of the intensity (H ₂ ) is located 10 cm away from the evaporation source. Comparing the magnetic field intensity (H _1, H _2), the magnetic field by the magnetic field, the functional side, close to the evaporation source, and the outer coils of the pair (44, 45) by the inner coil (42, 43) of the first pair, It works on the far side of evaporation source.

The intensity (H ₃ ) of the composite magnetic field is almost zero in the vicinity of the evaporation source and 15 cm from the evaporation source, and is maximized and directed to the right. Thus, in the vicinity of the evaporation source, the magnetic field in the transverse direction formed by the auxiliary coil 46 is almost zero, while the magnetic field in the transverse direction formed by the auxiliary coil 46 at the position somewhat distant from the evaporation source, (Mb). Then, the direction of the diffusion center of the film-forming material particles Mb evaporating from the evaporation source can be directed to the right side. However, the magnetic field intensity in the case of directing the direction of the diffusion center to the left is symmetrical in the left and right directions, and a description thereof will be omitted.

According to the film forming apparatus of the second embodiment, a magnetic field generated by the pair of inner coils 42 and 43 is generated in the vicinity of the evaporation source so as to eliminate the influence of the magnetic field by the pair of outer coils 44 and 45 And the direction of the diffusion center of the film forming material particles Mb can be changed by a magnetic field generated by the pair of outer coils 44 and 45 at a position about 15 cm away from the evaporation source. The direction of the diffusion center of the film forming material particles Mb is periodically varied in the lateral direction (in the width direction of the object to be formed) by the evaporation direction adjusting unit 40 so that the position where the film forming material particles Mb having high activity is attached The distribution of the film quality can be made uniform.

The film forming material particles Mb can alternately reach from both evaporation sources in the region of the object to be film-formed relative to the position corresponding to the center of the adjacent evaporation source, and the bias of the position where the high- So that the distribution of the film quality can be made uniform.

The magnetomotive force by the pair of outer coils 44, 45 may be set to about 2.5 times the magnetomotive force by the pair of inner coils 43, 44. Thus, in the vicinity of the evaporation source, a magnetic field in the transverse direction (Z-axis direction) is generated at the position near the cusp magnetic field by the permanent magnet 20 while the magnetic field in the transverse direction formed by the auxiliary coil 46 is almost zero .

The frequency of the alternating current supplied to the auxiliary coil 46 may be, for example, 10 Hz or more and 170 Hz or less. This frequency is appropriately selected in accordance with the conveying speed of the object to be formed. If the frequency is too high, no magnetic force is generated from the case 12, and an appropriate magnetic field can not be formed.

The present invention is not limited to the above-described embodiments, and various modifications are possible as long as they do not depart from the gist of the present invention.

For example, in the above-described embodiment, the evaporation direction adjusting unit is provided in the film forming apparatus having a plurality of evaporation sources, but the evaporation direction adjusting unit may be provided in the film forming apparatus having one evaporation source.

In the above embodiment, the diffusion width of the film forming material particles is changed or the direction of the diffusion center is changed, but the direction of the diffusion center may be changed while changing the diffusion width.

The evaporation direction adjustment unit 40 includes a pair of inner coils and a pair of outer coils. For example, the evaporation direction adjustment unit 40 may include only a pair of coils. The shape of the pair of auxiliary coils is not limited, and may be any other shape such as a circle or a rectangle.

Further, although the direction of the diffusion center of the film-forming material particles is changed, for example, in the lateral direction by the evaporation direction adjusting unit 40, the direction of the diffusion center may be changed in other directions. For example, when viewed from the X-axis direction, the direction of the diffusion center may be changed so as to turn in the circumferential direction of the magnet 30.

1: Deposition device
6, 41: Ringhas
7: Plasma source
10: Vacuum chamber
11: Film forming object
17: Mainhas
20: permanent magnet
21, 40: evaporation direction adjusting section
42, 43: a pair of inner coils
44, 45: a pair of outer coils
46: auxiliary coil

Claims (4)

A film forming apparatus for depositing evaporation particles of the film forming material on an object to be formed by heating and evaporating the film forming material in a vacuum chamber by a plasma beam,
A plasma source for generating the plasma beam in the vacuum chamber;
Wherein the film forming material to be an evaporation source is charged and the plasma beam is guided to the film forming material, or the main beam is a main electrode from which the plasma beam is guided,
A ring hearth which is disposed around the main hearth and which is a secondary anode for leading the plasma beam,
And an evaporation direction adjusting section for changing the direction of the evaporation particles evaporating from the evaporation source at predetermined time intervals,
Wherein the ring hub has an annular coil, an annular permanent magnet, a container for accommodating the coil and the permanent magnet,
Wherein the evaporation direction adjusting unit comprises a coil and a helical coil power supply unit for supplying a current to the coil,
The pulse width modulation unit changes the direction of the evaporation particles every predetermined time by changing the diffusion width of the evaporation particles evaporating from the evaporation source by changing the current value supplied to the coil at every predetermined time during the film formation Film forming apparatus. The method according to claim 1,
A plurality of sets of the plasma source, the main hearth and the ring hearth are provided,
The haul-
During the film formation,
A current value different from the current value is supplied to the coils of the adjacent two ring-
And switches the current values supplied to the two coils at the same timing at the same time. A film forming apparatus for depositing evaporation particles of the film forming material on an object to be formed by heating and evaporating the film forming material in a vacuum chamber by a plasma beam,
A plasma source for generating the plasma beam in the vacuum chamber;
Wherein the film forming material to be an evaporation source is charged and the plasma beam is guided to the film forming material, or the main beam is a main electrode from which the plasma beam is guided,
A ring hearth which is disposed around the main hearth and which is a secondary anode for leading the plasma beam,
And an evaporation direction adjusting section for changing the direction of the evaporation particles evaporating from the evaporation source at predetermined time intervals,
Wherein the ringhas includes a ring-shaped coil, an annular permanent magnet, an auxiliary coil provided so as to be paired with the main hearth therebetween, and a container for accommodating the coil, the permanent magnet, and the pair of auxiliary coils ,
Wherein the evaporation direction adjustment unit is constituted by an auxiliary coil power supply unit that supplies current to the auxiliary coils paired with the pair of auxiliary coils,
The sub-
A current is supplied to the pair of auxiliary coils so that magnetic poles of the pair of auxiliary coils on the film formation object side are different from each other,
The direction of the diffusion center of the evaporation particles evaporating from the evaporation source is changed every predetermined time by changing the current value supplied to the auxiliary coils paired at predetermined time intervals during the film formation so that the direction of the evaporation particles is changed every predetermined time Film forming apparatus. The method of claim 3,
A plurality of sets of the plasma source, the main hearth and the ring hearth are provided,
The sub-
During the film formation,
Wherein a phase of changing a current value to be supplied to said auxiliary coils in a plurality of sets is made the same so that the directions of diffusion centers of said evaporating particles evaporating from a plurality of evaporation sources become the same.

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