KR20160109658A - Thermoelectric module and method for manufacturing the same - Google Patents

Abstract

Provided are a thermoelectric module in which more many thermoelectric elements are integrated in unit area to increase power density and a method for manufacturing the same. The method for manufacturing a thermoelectric module includes the steps of: preparing a stack by coupling a P-type waver and an N-type wafer to each other with adhesive and alternately stacking them; obtaining a bar including several pairs of a P-type thermoelectric element and an N-type element by sliding the stack in two directions which are orthogonal to each other and perpendicular to a base surface of the stack; and forming a lattice-shaped block in which the P-type element and the N-type element alternate by integrating the bars.

Description

TECHNICAL FIELD [0001] The present invention relates to a thermoelectric module and a manufacturing method thereof,

The present invention relates to a thermoelectric device used in a thermoelectric generator and a method of manufacturing the thermoelectric module, and more particularly, to a thermoelectric module including a plurality of small and plural thermoelectric elements and a method of manufacturing the same.

The difference in the concentration of electrons (or holes) having heat dependence due to the temperature difference at both ends of the solid material occurs at both ends, and this is caused by an electric phenomenon, that is, a thermoelectric phenomenon. Such a thermoelectric phenomenon can be classified into a thermoelectric power generating electric energy and a thermoelectric cooling / heating which causes a temperature difference at both ends by electric power supply.

Thermoelectric materials exhibiting thermoelectric properties have been studied in many ways because they have environmental and sustainable advantages in power generation and cooling processes. Especially, it is interested in technology to improve fuel efficiency and CO ₂ by producing electric power from industrial waste heat and automobile waste heat.

In general, a thermoelectric device can be a basic unit of a p-type thermoelectric element that moves a hole to move heat energy, and a pair of pn thermoelectric elements that is an n-type thermoelectric element that moves electrons by the movement of electrons. A module type comprising a plurality of pairs of thermoelectric elements and electrodes above and below the pn thermoelectric elements and an insulating substrate pole.

1 is a partially cutaway perspective view schematically showing a conventional thermoelectric module.

Referring to FIG. 1, a conventional thermoelectric module 60 'includes a p-type thermoelectric element 64 and an n-type thermoelectric element 65. Electrodes 63 are attached to the pair of insulating substrates 61 and 62 in a predetermined pattern so that the p-type and n-type thermoelectric elements 64 and 65 are electrically connected by the electrodes 63.

If there is a temperature difference between the insulating substrates 61 and 62, an electromotive force is generated between the p-type thermoelectric element 64 and the n-type thermoelectric element 65, and the thermoelectric element 65 is pulled out through a lead wire connected to the terminal. As described above, the conventional thermoelectric module has a structure in which the pair composed of the p-type thermoelectric elements 64 and the n-type thermoelectric elements 65 are repeatedly arranged according to the use conditions. Each pair is connected to an electrode 63, and the electrode 63 is connected to an insulating substrate 61, 62. That is, a general thermoelectric module is a thermoelectric module in which p-type and n-type thermoelectric elements are arranged regularly so as to form a plurality of thermoelectric elements in a planar manner, and these thermoelectric elements are electrically connected in series And thermally connected in parallel.

As a conventional method of manufacturing such a thermoelectric module, it is known to separately form p-type and n-type thermoelectric elements and then to integrate them into an insulating substrate. The spacing between the integrated pn thermoelectric elements is large to increase the number of thermoelectric elements per unit area There is a limit to what you can do. Also, in manufacturing, various processes such as joining individual p-n thermoelectric elements to electrodes formed on an insulating substrate are required to be performed, thereby increasing the manufacturing cost and decreasing the reliability of the product.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a thermoelectric module in which the power density is increased by integrating more thermoelectric elements per unit area and a method of manufacturing the thermoelectric module.

According to an aspect of the present invention, there is provided a method of manufacturing a thermoelectric module including: fabricating a stack by alternately stacking a p-type wafer and an n-type wafer with an insulating adhesive; Slicing the stack along two mutually orthogonal directions perpendicular to the base surface of the stack to obtain a rod comprising a plurality of pairs of p-type thermoelectric elements and n-type thermoelectric elements; And stacking the bars to form a grid-like block in which the p-type thermoelectric element and the n-type thermoelectric element alternate with each other.

Another method of manufacturing a thermoelectric module according to the present invention comprises: preparing a stack by alternately stacking p-type wafers and n-type wafers with an insulating adhesive; A step of slicing the stack along a direction perpendicular to a base surface of the stack to obtain a block in which a p-type thermoelectric bar and an n-type thermoelectric bar are alternately stacked; Bonding the blocks between the p-type thermoelectric bar and the n-type thermoelectric bar such that the first slicing faces are opposed to each other and stacking the blocks with the heat insulating adhesive; And forming a lattice-shaped block in which the p-type thermoelectric element and the n-type thermoelectric element alternate by slicing the stacked block in a direction crossing the first slicing face.

In the thermoelectric module manufacturing methods according to the present invention, it is preferable that the p-type wafer and the n-type wafer are sliced by an ingot manufactured by sintering by SPS (Spark Plasma Sintering) or Hot Press.

The thickness of each of the p-type wafer and the n-type wafer may be 0.01 mm to 10 mm. Preferably 0.1 mm to 2 mm.

The step of integrating the bars may be to bond the bars with the adiabatic adhesive.

The heat insulating adhesive may be a curable material filled with an inorganic powder. The inorganic powder may include at least one of metal oxides, metal nitrides, metal carbides, and metal hydroxides. The curable material may include at least one of silicone resin, acryl, polyurethane, epoxy, polyimide, and polyamide.

In one specific embodiment, the step of obtaining the bar comprises: first slicing the stack along a direction perpendicular to the base surface of the stack to obtain a block in which a p-type thermoelectric bar and an n-type thermoelectric bar are alternately stacked; And secondary slicing the block in a direction crossing the primary slicing plane.

The thermoelectric module according to the present invention may be manufactured such that the fill factor (total area of the thermoelectric element / module area) is 0.8 or more.

The thermoelectric module according to the present invention has a p-type thermoelectric element and an n-type thermoelectric element alternating with each other from a wafer produced by sintering by SPS or hot press, and the p-type thermoelectric element and the n-type thermoelectric element are bonded with an insulating adhesive.

According to the present invention, the output density of the thermoelectric module can be increased by stacking more than one thermoelectric elements per unit area by stacking the wafers sintered with SPS or hot press with a heat insulating adhesive to manufacture thermoelectric modules.

In the present invention, the p-type thermoelectric material and the n-type thermoelectric material are not collectively formed on the insulating substrate after the p-type and n-type thermoelectric elements are separately formed, It is possible to more easily manufacture the thermoelectric module with a smaller number of processes. In this way, according to a simpler manufacturing process, the manufacturing cost can be reduced and the reliability of the product can be increased.

BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate exemplary embodiments of the invention and, together with the description of the invention, It should not be construed as limited.
1 is a partially cutaway perspective view schematically showing a conventional thermoelectric module.
2 is a flowchart of a method of manufacturing a thermoelectric module according to an embodiment of the present invention.
FIG. 3 is a view for explaining a method of manufacturing a thermoelectric module according to an embodiment of the present invention.
4 is a flowchart of a method of manufacturing a thermoelectric module according to another embodiment of the present invention.
FIG. 5 is a view for explaining a method of manufacturing a thermoelectric module according to another embodiment of the present invention.
6 is a photograph of a lattice-type block manufactured according to an experimental example of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. It is provided to let you know. The shape of the elements and the like in the drawings are exaggerated in order to emphasize a clearer description, and the same reference numerals denote the same elements.

2 is a flowchart of a method of manufacturing a thermoelectric module according to an embodiment of the present invention.

Referring to Fig. 2, the method of manufacturing a thermoelectric module of the present invention includes a stack manufacturing step (s1), a slicing step (s2), and an integrating step (s3).

In the stack manufacturing step (s1), p-type wafers and n-type wafers are bonded with an adiabatic adhesive to produce alternating stacks. &Quot; Alternating " stacking means alternately stacking as is well known. For example, p-type, n-type, p-type, n-type, ... Are alternately laminated so as to be stacked in this order.

In the slicing step (s2), the stack is sliced along two mutually orthogonal directions perpendicular to the base surface of the stack to obtain a rod including a plurality of pairs of p-type thermoelectric elements and n-type thermoelectric elements. The 'base surface of the stack' corresponds to the wide surface of the p-type wafer and the n-type wafer.

In the integration step (s3), these rods are integrated to form a lattice type block in which the p-type thermoelectric element and the n-type thermoelectric element alternate. The stack is stacked along the stacking direction to form p-type, n-type, p-type, n-type, ... And the lattice-type blocks are arranged in the order of p-type, n-type, p-type, n-type, In addition to alternating in sequence, the p-type, n-type, p-type, n-type, Alternating in order.

This manufacturing method will be described in more detail with reference to Fig.

FIG. 3 is a view for explaining a method of manufacturing a thermoelectric module according to an embodiment of the present invention.

Referring to FIG. 3 (a), first the stack manufacturing step (s1) of FIG. 2 is performed to manufacture the stack 30. The stack 30 is manufactured by alternately laminating a p-type wafer 10 and an n-type wafer 20 and bonding the p-type wafer 10 and the n-type wafer 20 with a heat insulating adhesive 15 . When the adiabatic adhesive 15 is operated at room temperature, the step of preparing the stack 30 is performed at room temperature. In the case of the adiabatic adhesive 15 using a thermosetting material or the like, a step of curing at a high temperature after lamination is necessary.

The p-type wafer 10 and the n-type wafer 20 may be manufactured by sintering by SPS or hot press. The SPS or the hot press is a pressure sintering method. When the sintering is performed by this pressure sintering method, the thermoelectric material can easily obtain high sintering density and thermoelectric performance improving effect. The SPS method is a process in which pulsed electrical energy is directly applied to the particle gap of the powder compact, and the high energy of the discharge plasma generated instantaneously by the spark discharge is effectively applied by the action of heat diffusion and electric field. It is possible to control the growth of particles, to obtain a dense sintered body in a short period of time, and to sinter an egg sintered material easily. A hot press is a method of using a high pressure of 100 to 200 MPa and a high temperature, filling a capsule with a predetermined amount of a powder or a molded body, deaerating and sealing, and simultaneously heating and sintering the mixture while pressing.

In terms of mass production, it is preferable that the p-type wafer 10 and the n-type wafer 20 are wafers sliced in an ingot produced by sintering by SPS or hot press. The thermoelectric material at this time may be any sinterable thermoelectric material. The thermoelectric material is preferably a semiconductor, a metal, a metal alloy, a semi-metal, or a combination thereof. A zirconium alloy, a skutterudite, a clathrate, a Half-Heusler intermetallic alloy, a zintl phase, zinc antimonide, chalcogenide, silicon germanium and Pb- Semiconductors of Te-based materials are preferred. In the case of using wafers manufactured by the crystal growth method, there is a limitation on the materials capable of crystal growth and the mechanical strength is sometimes poor. In the present invention, since pellets or wafers produced by sintering are used, there are few restrictions on usable materials and the mechanical strength is excellent.

The thickness of each of the p-type wafer 10 and the n-type wafer 20 can be determined in consideration of ease of manufacture and handling and the size of the desired thermoelectric module, and may be 0.01 mm to 10 mm. Preferably 0.1 mm to 2 mm.

The heat insulating adhesive 15 is also called ceramic glue or polymer glue, and the heat insulating inorganic powder is filled in the curable material. It has good price advantage and thermal conduction performance, and is widely used in thermal bonding interface. Especially, it has advantages of easy fixing and is used in various forms.

In order to reduce the thermal conductivity of the heat insulating adhesive, a material having a low thermal conductivity may be filled in the curable resin and it may be thinned. For the roughening, adjust the viscosity of the adhesive and the size of the filler. The smaller the viscosity of the adhesive and the smaller the size of the filler, the more it can be thinned. Examples of the material with low thermal conductivity include metal oxides such as aluminum oxide, magnesium oxide, zinc oxide, silicon carbide, quartz, and aluminum hydroxide, metal carbides, and metal hydroxides. The curable material may include at least one of silicone resin, acrylic, polyurethane, epoxy, polyimide, and polyamide.

The composition of the heat insulating adhesive 15 used in the present invention is not limited to those exemplified above. The thermal adhesive 15 may be any product that is commercially available if the heat transfer module is made thin and short and the heat transfer is reduced. Among them, an adhesive excellent in adhesiveness, impact resistance, and heat insulating property is preferable.

Although it is not intended to limit the use of any particular product, the bonding thickness (BLT) of the heat-insulating adhesive 15 is as small as about 130 mu m. And stably adheres to various types of substrates. These small BLTs increase the fill factor of the thermoelectric module according to the invention.

Next, referring to FIG. 3 (b), the stack 30 is first sliced along a direction (c) perpendicular to the base surface of the stack 30 to form a p-type thermoelectric rod 10a and an n- The rods 20a obtain the alternately stacked blocks 30a. Reference numeral 40 denotes a primary slicing direction. The slicing can be performed by a normal fine cutter or the like. For example, a wire saw 50 used for slicing a wafer from an ingot or the like may be used.

The primary slicing can be performed in such a manner that a plurality of blocks 30a are successively obtained by repeatedly using one wire saw 50 repeatedly. Of course, it is also possible to simultaneously manufacture a plurality of blocks 30a by a single slicing process after arranging the wire saws 50 at equal intervals.

Then, as shown in FIG. 3C, the block 30a is sliced secondarily in a direction crossing the primary slicing surface to form the slits 30a of the p-type thermoelectric elements 10b and the n- A rod 30b including several pairs is obtained. Reference numeral 60 denotes a secondary slicing direction. In general, it is optimal to orthogonalize the primary slicing direction 40 and the secondary slicing direction 60.

In the second slicing, a plurality of bars 30b can be successively obtained by repeatedly using one wire saw 50 repeatedly. A plurality of bars 30b may be simultaneously manufactured by a single slicing process after arranging the wire saws 50 at equal intervals.

3 (b) and 3 (c) correspond to the slicing step (s2) of FIG.

Next, as shown in FIG. 3 (d), the rods 30b are integrated to form a grid-shaped block 30c in which the p-type thermoelectric element 10b and the n-type thermoelectric element 20b alternate. This corresponds to the integration step (s3) of Fig.

When the rods 30b are integrated, the two adjacent rods 30b are arranged so that the p-type thermoelectric elements 10b and the n-type thermoelectric elements 20b can alternate along the rows and columns of the lattice- The stacking order is staggered. Between the rods 30b is also bonded with the heat insulating adhesive 15.

At this time, this grid-shaped block 30c can be clamped or inserted between two electrically isolated substrates 70 and 80 as shown to form a complete thermoelectric module 100. [ The substrates 70 and 80 are insulating substrates such as a ceramic substrate. An electrode (not shown) may be formed directly on the top and bottom of the grid-shaped block 30c and then bonded to the substrates 70 and 80. Alternatively, electrodes may be formed on the substrates 70 and 80, Shaped block 30c by adhering the substrate 70, 80 to the substrate. The electrodes are arranged such that the p-type thermoelectric element 10b and the n-type thermoelectric element 20b are repeatedly arranged in series in accordance with the use conditions. Depending on the application, a bare type thermoelectric module without any substrate or no substrate may be manufactured.

As the substrates 70 and 80, sapphire, silicon, Pyrex, a quartz substrate, or the like can be used. The material of the electrode may be selected from a variety of materials such as aluminum, nickel, gold, titanium, and the like. The electrode may be patterned by any known patterning method without limitation. For example, a lift-off semiconductor process, a deposition method, a photolithography process, or the like may be used.

3, the p-type wafer 10 and the n-type wafer 20 from the ingot sintered by SPS or hot press are bonded to the heat insulating adhesive ( 15) and then sliced in one direction [manufacture of the stack 30] (manufacture of the block 30a), and the sliced portion is cut in the longitudinal direction to make the heat of the pn thermoelectric element (the manufacture of the rod 30b) ]. Thereafter, the heat of the p-n thermoelectric elements is arranged on the substrate to form a module. At this time, too, the thermoelectric adhesive 15 is used to bond the heat of the p-n thermoelectric elements (manufacture of the lattice type block 30c).

In the present invention, the p-type and n-type thermoelectric elements are not separately formed and then integrated on the insulating substrate, but the stack 30, the block 30a cut in the stack 30, the rod 30b cut in the block 30a It is possible to manufacture the thermoelectric module 100 with a smaller number of steps by collecting the rods 30b collectively by using the aggregate of the p-type thermoelectric material and the n-type thermoelectric material collectively.

3 (d), the thermoelectric module 100 according to the present invention includes a p-type thermoelectric conversion element 10b and an n-type thermoelectric conversion element 20b from a pellet or wafer produced by SPS or hot press sintering, And the p-type thermoelectric element 10b and the n-type thermoelectric element 20b are coupled with the heat insulating adhesive 15. [

In the conventional thermoelectric module, there is a limit to increase the number of thermoelectric elements per unit area because the interval between p-n thermoelectric elements is large. However, according to the present invention, there is an advantage that the p-type thermoelectric element 10b and the n-type thermoelectric element 20b are bonded by the heat insulating adhesive 15 and are compactly integrated without an empty space. Accordingly, it is possible to manufacture a thermoelectric module having a fill factor (total area of thermoelectric element / module area) of 0.8 or more, and a thermoelectric module having a high power density.

The closer the fill factor is to 1, the more ideal, but there is a limit to the manufacturing method and arrangement of thermoelectric elements. The present invention has a disposition and a manufacturing method in which the thickness of the adiabatic adhesive 15 is at least 0.8, which is calculated on the assumption that the thickness is the minimum thickness for maintaining the bonding.

The insulating adhesive 15 is preferably not electrically conductive. The heat insulating adhesive 15 acts as an insulating diaphragm between the p-type thermoelectric element 10b and the n-type thermoelectric element 20b, and effectively prevents moisture from penetrating from the outside. Therefore, the adiabatic adhesive 15 provides easier module production and furthermore, the p-type thermoelectric conversion element 10b and the n-type thermoelectric conversion element 20b are separated from the deterioration and contamination by external factors such as humidity, Protect.

The thermoelectric module 100 according to the present invention may be, for example, a thermoelectric cooling system or a thermoelectric power generation system, and the thermoelectric cooling system may be a non-refrigerated refrigerator, a general cooling device such as an air conditioner, System, but the present invention is not limited thereto. The construction and the manufacturing method of the thermoelectric cooling system are well known in the art, and a detailed description thereof will be omitted herein.

4 is a flowchart of a method of manufacturing a thermoelectric module according to another embodiment of the present invention.

Referring to FIG. 4, another thermoelectric module manufacturing method of the present invention includes a stack manufacturing step s11, a first slicing step s12, an assembling step s13, a second slicing step s14, and an integrating step s15 .

The stack manufacturing step s11 is the same as the stack manufacturing step s1 described with reference to Fig.

In the first slicing step (s12), the stack is sliced first along a direction perpendicular to the base surface of the stack to obtain a block in which the p-type thermoelectric bar and the n-type thermo bar are alternately stacked.

In the assembling step s13, the first slicing faces are opposed to each other, and the blocks are laminated with the heat insulating adhesive so that the p-type thermoelectric bar and the n-type thermoelectric bar alternate.

In the second slicing step (s14), the laminated block manufactured in the assembling step (s13) is sliced in a direction crossing the first slicing surface to form a lattice type block in which the p-type thermoelectric element and the n-type thermoelectric element alternate do.

In the integration step (s15), the grid-shaped block, the electrode and the substrate are integrated into a thermoelectric module.

This manufacturing method will be described in more detail with reference to FIG.

FIG. 5 is a view for explaining a method of manufacturing a thermoelectric module according to another embodiment of the present invention.

Referring to Figure 5 (a), the stack 30 is first fabricated. The stack 30 is manufactured by alternately laminating a p-type wafer 10 and an n-type wafer 20 and bonding the p-type wafer 10 and the n-type wafer 20 with a heat insulating adhesive 15 . The method of manufacturing the stack 30 is the same as that described with reference to FIG. 3 (a).

Next, FIG. 5 (b) shows the block 30a made by the first slicing. The block 30a is formed by alternately stacking the p-type thermoelectric bar 10a and the n-type thermoelectric bar 20a. The method of manufacturing the block 30a is the same as the description of the primary slicing with reference to Fig. 3 (b). The first slicing direction is indicated by reference numeral 40 'in FIG. 5 (a).

Next, FIG. 5C shows the assembling step (s13) of FIG. The blocks 30a are bonded to each other with the heat insulating adhesive 15 so that the first sliced faces are opposed to each other and the p-type thermoelectric bar 10a and the n-type thermoelectric bar 20a alternate.

Next, the stacked blocks 30a are sliced second in a direction (indicated by reference numeral 60 'in FIG. 5 (c)) crossing the first slicing plane. In general, it is optimal to perpendicularly intersect the first slicing surface.

Then, as shown in FIG. 5 (d), a grid-shaped block 30d in which the p-type thermoelectric element 10b and the n-type thermoelectric element 20b alternate with each other is formed.

The subsequent step of integrating the thermoelectric module into the thermoelectric module (step s15 in Fig. 4) is the same as that described with reference to Fig. 3 (d). Electrodes may be formed on the upper and lower portions of the grid-shaped block 30d to form bare-type thermoelectric modules, or further, the upper and lower substrates may be integrated to form a thermoelectric module.

6 is a photograph of a lattice-type block manufactured according to an experimental example of the present invention.

The lattice type block was manufactured according to the description with reference to FIG. 5, and the module dimension was designed to be 7 x 4.5 mm ² . and eight pairs of pn thermoelectric elements (the number of thermoelectric elements is 16). Thus, a very compact structure of the lattice type block can be manufactured and used as a thermoelectric module. The fill factor is 0.8 or more and can have a very high power density.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but many variations and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims. It will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the appended claims.

10: p-type wafer 10a: p-type thermoelectric bar
10b: p-type thermoelectric element 15: adiabatic adhesive
20: n-type wafer 20a: n-type thermoelectric bar
20b: n-type thermoelectric element 30: stack
30a: block 30b: rod
30c, 30d: grid type block 40: primary slicing direction
40 ': first slicing direction 50: wire saw
60: second slicing direction 60 ': second slicing direction
70, 80: substrate 100: thermoelectric module

Claims (15)

between the p-type wafer and the n-type wafer, a thermal insulation adhesive to form an alternating stack;
Slicing the stack along two mutually orthogonal directions perpendicular to the base surface of the stack to obtain a rod comprising a plurality of pairs of p-type thermoelectric elements and n-type thermoelectric elements; And
And integrating the bars to form a grid-like block in which the p-type thermoelectric element and the n-type thermoelectric element alternate. forming a stack by alternately laminating p-type wafers and n-type wafers with an insulating adhesive;
A step of slicing the stack along a direction perpendicular to a base surface of the stack to obtain a block in which a p-type thermoelectric bar and an n-type thermoelectric bar are alternately stacked;
Bonding the blocks between the p-type thermoelectric bar and the n-type thermoelectric bar such that the first slicing faces are opposed to each other and stacking the blocks with the heat insulating adhesive; And
And forming a grid-shaped block in which the p-type thermoelectric element and the n-type thermoelectric element alternate with each other by slicing the stacked block in a direction crossing the first slicing surface. The method of claim 1 or 2, wherein the p-type wafer and the n-type wafer are pellets or wafers manufactured by sintering by SPS or hot press. The method according to claim 1 or 2, wherein the p-type wafer and the n-type wafer each have a thickness of 0.1 mm to 2 mm. 2. The method of claim 1, wherein the step of integrating the bars comprises bonding the bars with the adiabatic adhesive. The thermoelectric module manufacturing method according to claim 1 or 2, wherein the heat insulating adhesive is filled with a heat insulating inorganic powder in a curable material. The method of claim 6, wherein the inorganic powder comprises at least one of metal oxide, metal carbide, and metal hydroxide. The thermoelectric module according to claim 6, wherein the curable material comprises at least one of silicone resin, acryl, polyurethane, epoxy, polyimide, and polyamide. Gt; 2. The method of claim 1,
Firstly slicing the stack along a direction perpendicular to a base surface of the stack to obtain a block in which a p-type thermoelectric bar and an n-type thermoelectric bar are alternately stacked; And
And second slicing the block in a direction crossing the primary slicing surface. The thermoelectric module manufacturing method according to claim 1 or 2, wherein a fill factor (total area of thermoelectric element / module area) is 0.8 or more. A thermoelectric module in which a p-type thermoelectric element and an n-type thermoelectric element from pellets or wafers produced by sintering by SPS or hot press are alternated and the p-type thermoelectric element and the n-type thermoelectric element are bonded by an insulating adhesive. 12. The thermoelectric module according to claim 11, wherein the heat insulating adhesive is filled with a heat insulating inorganic powder in the curable material. The thermoelectric module according to claim 12, wherein the inorganic powder comprises at least one of a metal oxide, a metal carbide, and a metal hydroxide. The thermoelectric module according to claim 12, wherein the curable material comprises at least one of silicone resin, acryl, polyurethane, epoxy, polyimide, and polyamide. . 12. The thermoelectric module according to claim 11, wherein the fill factor is 0.8 or more.

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