KR20160103928A - Substrate processing apparatus, method of manufacturing semiconductor device and heating unit - Google Patents

Substrate processing apparatus, method of manufacturing semiconductor device and heating unit Download PDF

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KR20160103928A
KR20160103928A KR1020160017774A KR20160017774A KR20160103928A KR 20160103928 A KR20160103928 A KR 20160103928A KR 1020160017774 A KR1020160017774 A KR 1020160017774A KR 20160017774 A KR20160017774 A KR 20160017774A KR 20160103928 A KR20160103928 A KR 20160103928A
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heating
heat generating
heater
substrate
temperature
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KR1020160017774A
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Korean (ko)
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KR101767469B1 (en
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히토시 무라타
유이치 와다
타카시 야하타
히데나리 요시다
슈헤이 사이도
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가부시키가이샤 히다치 고쿠사이 덴키
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/54—Providing fillings in containers, e.g. gas fillings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Abstract

The present invention is to shorten a temperature settling time in a processing path. A substrate processing apparatus comprises: a substrate holding unit for holding a plurality of substrates; an insulating unit installed on the lower side of the substrate holding unit; a processing room for containing the substrate holding unit and processing the plurality of substrates; a first heating unit installed around the processing room and heating the inside of the processing room on a side; a second heating unit installed between the substrate holding unit and the heating unit within the processing room. The second heating unit includes a substantially ring-shaped exothermic unit, and a loading unit extended from the heating unit downwards. The exothermic unit is contained in a ring-shaped area having a smaller diameter than the substrate.

Description

TECHNICAL FIELD [0001] The present invention relates to a substrate processing apparatus, a method of manufacturing a semiconductor device,

The present invention relates to a substrate processing apparatus, a method of manufacturing a semiconductor device, and a heating unit.

As a substrate processing apparatus, there is a batch type substrate processing apparatus that processes a predetermined number of substrates at one time. In a batch-type substrate processing apparatus, a predetermined number of substrates are held in a substrate support (holding member), the substrate support is brought into the process chamber, and the process gas is introduced into the process chamber while the substrate is heated to perform a desired process .

Heretofore, the substrate in the treatment chamber is heated from the side by a heater installed to surround the treatment chamber. However, in particular, the central portion of the substrate downward (downward) in the treatment chamber is difficult to be heated and the temperature thereof is easily lowered. As a result, in the conventional substrate processing apparatus, it takes time to raise the temperature in the processing chamber and the recovery time (temperature stabilization time) is long.

1. Japanese Patent No. 3598032

An object of the present invention is to provide a technique capable of shortening a temperature stabilization time in a treatment chamber.

According to the present invention, there is provided a semiconductor device comprising: a substrate support for holding a plurality of substrates; A heat insulating part provided below the substrate supporting part; A processing chamber for accommodating the substrate support and processing the plurality of substrates; A first heating unit installed around the treatment chamber and heating the inside of the treatment chamber at the side; And a second heating unit disposed in the processing chamber and disposed between the substrate holding unit and the heat insulating unit, wherein the second heating unit includes: a substantially annular heating unit; And a water droplet (droplet) extending (extending) downward from the heat generating portion, wherein the heat generating portion is housed in an annular region having a diameter smaller than the diameter of the plurality of substrates.

According to the present invention, the temperature stabilization time in the treatment chamber can be shortened.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side cross-sectional view of a processing furnace of a substrate processing apparatus preferably used in the first embodiment of the present invention. Fig.
2 is a schematic configuration view showing a control system of a substrate processing apparatus according to a first embodiment of the present invention;
FIG. 3A is a diagram showing a simulation result of a temperature distribution when all regions of the bottom of the processing chamber are heated to the same temperature in the substrate processing apparatus according to the first embodiment of the present invention. FIG. 1 is a diagram showing a simulation result of a temperature distribution in the case where all regions of the bottom of the processing chamber are heated with equal output in the substrate processing apparatus according to one embodiment.
4 is a view showing a simulation result of a temperature distribution when a portion corresponding to a roughly middle portion of the substrate in the bottom area of the processing chamber is heated by the cap heater according to the first embodiment of the present invention.
5 is a graph showing a comparison of in-plane temperature distributions of the lowermost substrate when the cap heaters according to the first embodiment of the present invention have different diameters. The circle indicates the position where the cap heater 34 is installed.
6 is a graph showing a comparison of the maximum temperature difference of the in-plane temperature of the lowermost substrate when the diameter of the cap heater is changed according to the first embodiment of the present invention.
7 is a top view showing a cap heater according to a first embodiment of the present invention and a peripheral portion thereof;
8 is an enlarged cross-sectional side view of a main part showing the bottom area of the substrate processing apparatus according to the first embodiment of the present invention.
9 is an enlarged cross-sectional side view of the recessed portion showing the bottom region of the substrate processing apparatus according to the first embodiment of the present invention.
10 is a perspective view showing a cap heater according to a first embodiment of the present invention;
11 is a top view showing a cap heater according to the first embodiment of the present invention.
12 is a side view showing a cap heater according to the first embodiment of the present invention.
13 is a front view showing a cap heater according to the first embodiment of the present invention.
Fig. 14 is a top view showing a cap heater and its periphery according to a modification of the first embodiment of the present invention; Fig.
15 is a top view showing a cap heater and a peripheral portion thereof according to a second embodiment of the present invention;
16 is a top view showing a cap heater and its periphery according to a modification of the second embodiment of the present invention.
17 is a top view of a cap heater according to a third embodiment of the present invention.
18 is a longitudinal sectional view showing a cap heater according to a third embodiment of the present invention.
19 is a schematic view showing the configuration of a substrate processing apparatus preferably used in the first embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

As shown in Fig. 1, the processing furnace 1 includes a cylindrical side heater 2 as a first heating section. A reaction tube 5 made of a heat resistant material such as quartz (SiO 2 ) and closed at its upper end and opened at its lower end is provided inside the side heater 2, And is concentrically arranged with respect to the body.

A processing chamber 6 is formed by the inside of the reaction tube 5 and a boat 7 serving as a substrate holding tool is housed in the processing chamber 6. The boat 7 is configured to hold the wafer 8 as a substrate in a state of being aligned in multiple stages in a vertical direction in a horizontal posture. The boat 7 is made of, for example, quartz or silicon carbide.

In this embodiment, as shown in Fig. 19, the treatment chamber 6 is divided into four regions from the top, namely, region 1, region 2, region 3 and region 4. The side heaters 2 are divided into first to fourth heaters corresponding to the respective regions. Around the region 1, a first heater 2A, a second heater 2B around the region 2, a third heater 2C around the region 3, and a fourth heater 2D) are respectively installed. In the treatment chamber 6, the boat 7 is housed in the region 1 to the region 3, and the heat insulating portion 31 described later is housed in the region 4. (The product area) in which the boat 7 is housed by the first heater to the third heater, the first heater to the third heater may be collectively referred to as an upper heater for heating the product area. The fourth heater 2D may be used as a lower heater for heating the adiabatic region in order to heat the upper portion of the region (adiabatic region) where the adiabatic portion 31 is accommodated by the fourth heater 2D.

As shown in FIG. 1, a gas inlet 9 is provided at the lower end of the reaction tube 5 through the reaction tube 5. The gas introducing portion 9 is connected with a nozzle 12 as a gas introducing tube standing upright along the inner wall of the reaction tube 5. [ A plurality of gas introduction holes 16 are provided in the side surface of the nozzle 12 and in the direction opposite to the wafer 8. The process gas is introduced into the process chamber 6 from the gas introduction hole 16.

A source gas supply source, a carrier gas supply source, a reaction gas supply source, and an inert gas supply source, which are not shown, are connected to the upstream side of the gas introduction unit 9 via an MFC 14 (mass flow controller) as a gas flow rate controller. A gas flow rate control unit 15 is electrically connected to the MFC 14. The gas flow rate control unit 15 is configured to control the flow rate of the supplied gas at a desired timing such that it becomes a desired amount.

An exhaust unit 17 for exhausting the atmosphere in the process chamber 6 is provided at a position different from the gas introducing unit 9 at the lower end of the reaction tube 5. An exhaust pipe 18 is connected to the exhaust unit 17. [ The exhaust pipe 18 is provided with a pressure sensor 19 as a pressure detector (pressure detecting portion) for detecting the pressure in the treatment chamber 6. [ The pressure sensor 19 is connected to a vacuum pump 22 as a vacuum exhaust device via an APC (Auto Pressure Controller) valve 21 as a pressure regulator (pressure regulator).

The pressure control section 23 is electrically connected to the APC valve 21 and the pressure sensor 19. The pressure control section 23 is configured to control the APC valve 21 at a desired timing such that the pressure of the processing chamber 6 is brought to a desired pressure by the APC valve 21 based on the pressure detected by the pressure sensor 19 .

A base 24 as a pervious body capable of hermetically closing the lower end opening of the reaction tube 5 and a seal cap 25 serving as a lid body are provided at the lower end of the reaction tube 5. The seal cap 25 is formed of a metal such as stainless steel. The disk-shaped base 24 is formed, for example, of quartz and is installed to polymerize on the seal cap 25. On the upper surface of the base 24, there is provided an O-ring 26 as a seal member that makes contact with the lower end of the reaction tube 5. On the lower side of the seal cap 25, a rotation mechanism 27 for rotating the boat 7 is provided. A bottom plate 29 (bottom plate) of the boat 7 is fixed to an upper end of the rotary shaft 28 of the rotary mechanism 27.

A heat insulating portion (31) is provided below the boat (7). The heat insulating portion 31 has a structure in which the bottom plate 32 is supported narrowly by the pressure plate 33 (push plate) made of quartz. The heat insulating portion 31 is configured to prevent the heat insulating portion 31 from being turned off by restraining the bottom plate 32 between the pressure plates 33. The heat insulating portion 31 is in the form of a cylinder made of a heat resistant material such as quartz or silicon carbide.

An insulating plate (not shown) made of a heat-resistant material such as quartz or silicon carbide is laminated inside the heat insulating portion 31. The inside heat insulating plate may be referred to as a heat insulating portion 31. [ The fourth heater is configured to heat the upper portion of the heat insulating portion 31. [ With this configuration, the upper portion of the heat insulating portion 31 can be heated to secure the temperature controllability of the bottom region. On the other hand, the lower part of the heat insulating portion 31 is not directly heated. The heat from the side heater 2 and the cap heater 34 is insulated by the heat insulating portion 31 and is hardly transmitted to the nose portion on the lower end side of the reaction tube 5. [

A hole (30) (hole) penetrates the entire length in the vertical direction at the center of the heat insulating portion (31). A rotary shaft 28 is inserted and passed through the hole 30 and the rotary shaft 28 is connected to the boat 7 through the seal cap 25 and the base 24. The boat 7 is rotated independently of the heat insulating portion 31 by the rotation of the rotary shaft 28. [

The seal cap 25 is vertically elevated and raised by a boat elevator 35 as a vertically installed elevation mechanism on the outside of the reaction tube 5 so that the boat 7 is brought into and out of the processing chamber 6 It can be exported.

The space between the boat 7 and the heat insulating portion 31 is provided with a cap heater 34 as a second heating portion including a heat generating portion 51 to be described later. The cap heater 34 is installed so that the heat generating portion 51 is located at least at a height equal to or higher than the height position of the boundary between the third heater and the fourth heater. In other words, the cap heater 34 is provided so that the heat generating portion 51 is positioned at least above the height position of the boundary between the product region and the heat insulating region. By providing the cap heater 34 at such a position, it becomes possible to efficiently heat the bottom of the product area (the bottom area where the bottom wafer of the boat 7 is placed).

The cap heater 34 has a structure in which a resistance heating body is hermetically sealed in a quartz tube as a protective tube. The heating portion 51 of the cap heater 34 has a substantially annular shape in plan view (in plan view). With such a configuration, for example, the wafer 8 at the bottom end in the bottom area can be heated to an annular shape in the radial direction. That is, a part of the lowermost wafer 8 in the radial direction can be heavily heated. In other words, even if the central region of the lowermost wafer 8 is not heated, the region outside the central region can be heated. Since the cap heater 34 may have a strength enough to withstand the pressure when the process chamber 6 is depressurized, the thickness of the protective pipe of the cap heater 34 can be reduced, The thickness in the longitudinal direction can be made thin.

Between the side heater 2 and the reaction tube 5, a first temperature sensor 37 as a first temperature detector is provided. And a second temperature sensor 39 as a second temperature detector is provided so as to contact the surface of the protective pipe of the cap heater 34. [ Here, a second temperature sensor 39 is provided so as to contact the upper surface of the protective pipe (see Fig. 7). The second temperature sensor 39 has a structure in which a temperature detector such as a thermocouple is housed in a protective pipe.

The temperature control unit 38 adjusts the energization state to the side heater 2 based on the temperature information detected by the first temperature sensor 37 and controls the cap 40 based on the temperature information detected by the second temperature sensor 39. [ And to control the side heater 2 and the cap heater 34 at a desired timing so that the temperature in the processing chamber 6 becomes a desired temperature distribution by adjusting the state of energization to the heater 34. [ The gas flow rate control unit 15, the pressure control unit 23, the drive control unit 36 and the temperature control unit 38 are electrically connected to the controller 42 as a main control unit for controlling the entire substrate processing apparatus.

2, the controller 42 serving as the control unit (control means) includes a CPU 43 (Central Processing Unit), a RAM 44 (Random Access Memory), a storage device 45, an I / O port 46, As shown in FIG. The RAM 44, the storage device 45 and the I / O port 46 are configured to exchange data with the CPU 43 via the internal bus 47. The controller 42 is connected to an input / output device 48 constituted by, for example, a touch panel.

The storage device 45 is constituted by, for example, a flash memory, an HDD (Hard Disk Drive) or the like. In the storage device 45, a control program for controlling the operation of the substrate processing apparatus and a process recipe describing the order and conditions of the substrate processing to be described later are stored so as to be readable. The process recipe is combined with the controller 42 so as to obtain predetermined results by executing the respective steps in the substrate processing described later, and functions as a program.

Hereinafter, a process recipe and a control program are collectively referred to as a program. In the present specification, the word "program" includes only a recipe group, and includes only a control program group or both of them. The RAM 44 is configured as a memory area (work area) in which programs and data read by the CPU 43 are temporarily held.

The I / O port 46 is connected to the gas flow rate control unit 15, the pressure control unit 23, the drive control unit 36, and the temperature control unit 38 described above. The CPU 43 is configured to read and execute the control program from the storage device 45 and to read the recipe from the storage device 45 in response to an input of an operation command from the input / The CPU 43 controls the flow rate of various gases by the gas flow rate control unit 15, the pressure adjustment operation by the pressure control unit 23, the start and stop of the exhaust unit 22, The temperature control operation of the side heater 2 and the cap heater 34 by the control unit 38, the rotation and rotation speed adjustment operation of the boat 7 by the drive control unit 36, and the elevation operation.

The controller 42 is connected to the external storage 49 (e.g., a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto- Or a semiconductor memory such as a memory card) installed in the computer. The storage device 45 and the external storage device 49 are configured as a computer-readable recording medium. Hereinafter, these are collectively referred to simply as a recording medium. In the present specification, the term " recording medium " includes the case where only the storage device 45 is included alone, the case where only the external storage device 49 is included alone, or both cases. The provision of the program to the computer may be performed by using a communication means such as the Internet or a dedicated line without using the external storage device 49. [

Next, a method of performing substrate processing (hereinafter also referred to as a film forming process) for performing oxidation, diffusion, film formation, and the like on the wafer 8 as one of the manufacturing steps of the semiconductor device using the processing furnace 1 according to the above- . Here, an example in which a film is formed on the wafer 8 by alternately supplying a first process gas (source gas) and a second process gas (reaction gas) to the wafer 8 will be described. In the following description, the operations of the respective parts constituting the substrate processing apparatus are controlled by the controller.

When a predetermined number of wafers 8 are loaded on the boat 7, the boat 7 is loaded (boat load) into the processing chamber 6 by the boat elevator 35, do. In this state, the seal cap 25 hermetically closes the lower end opening (nose portion) of the reaction tube 5 via the base 24 and the O-ring 26. At this time, the cap heater 34 may be heated and maintained at a predetermined temperature (first temperature). In this case, the first temperature is set to a temperature lower than the temperature of the side heater 2 (at least the temperature of the fourth heater).

The processing chamber 6 is evacuated (decompressed and exhausted) by the exhaust device 22 so that the pressure in the processing chamber 6 becomes a desired pressure. At this time, the pressure in the treatment chamber 6 is measured by the pressure sensor 19, and the APC valve 21 is feedback-controlled based on the measured pressure.

The processing chamber 6 is heated by the side heater 2 and the cap heater 34 so that the wafer 8 in the processing chamber 6 is at a desired temperature. At this time, the energization state of the side heater 2 is feedback-controlled based on the temperature information detected by the first temperature sensor 37 so that the temperature distribution of the processing chamber 6 is the desired temperature, and the temperature detected by the second temperature sensor 39 The energization state of the cap heater 34 is feedback-controlled based on the information. At this time, the set temperature of the cap heater 34 is set to a temperature equal to or lower than the temperature of the side heater 2 (at least the temperature of the fourth heater). Here, when the wafer 8 in the bottom area in the processing chamber 6 reaches a desired temperature, the heating by the cap heater 34 may be stopped.

Subsequently, the boat 7 is rotated by the rotary mechanism 27 via the bottom plate 29 to rotate the wafer 8 being processed. At this time, since the rotary shaft 28 is inserted into and passed through the hole 30, only the boat 7 rotates with respect to the heat insulating portion 31. The rotation of the boat 7 makes it possible to uniformly heat the annular region of the bottom region even if the cap heater 34 is substantially annular.

(Raw material gas supply step)

Subsequently, the source gas is supplied from the source gas supply source into the process chamber 6. The raw material gas is controlled to have a desired flow rate by the MFC 14 and is introduced into the processing chamber 6 from the gas introduction hole 16 through the nozzle 12 from the gas introduction part 9.

(Raw material gas evacuation process)

When the predetermined supply of the raw material gas has elapsed, supply of the raw material gas into the processing chamber 6 is stopped, and the processing chamber 6 is vacuum-exhausted by the exhaust device 22. At this time, an inert gas may be supplied from the inert gas supply source into the process chamber 6 (inert gas purge).

(Reaction gas supply step)

When the preset exhaust time has elapsed, the reaction gas is supplied from the reaction gas supply source next. The reaction gas controlled to have a desired flow rate by the MFC 14 flows through the nozzle 12 from the gas inlet 9 and is introduced into the processing chamber 6 from the gas introduction hole 16.

(Reaction gas evacuation step)

When the predetermined processing time has elapsed, the supply of the reaction gas into the processing chamber 6 is stopped, and the processing chamber 6 is vacuum-exhausted by the exhaust device 22. At this time, an inert gas may be supplied from the inert gas supply source into the process chamber 6 (inert gas purge).

A film of a predetermined composition and a predetermined film thickness can be formed on the wafer 8 by performing the above-described four processes at a predetermined time (n times) to perform the processes at the same time, that is, without synchronizing them. It is also preferable that the aforementioned cycle is repeated a plurality of times.

After forming a film having a predetermined film thickness, an inert gas is supplied from an inert gas supply source to replace the inert gas in the treatment chamber 6, and the pressure in the treatment chamber 6 returns to normal pressure. Thereafter, the seal cap 25 is lowered by the boat elevator 35 to open the knocking portion and the processed wafer 8 is taken out of the reaction tube 5 in the state of being held by the boat 7 )do. Thereafter, the processed wafers 8 are taken out from the boat 7 (wafer discharge). At this time, heating by the cap heater 34 is stopped.

For example, DCS (SiH 2 Cl 2 : dichlorosilane) gas is used as a raw material gas and O 2 (dibutylsilane) gas is used as a reaction gas for forming an oxide film on the wafer 8 by the process (1) (Oxygen) gas is used as an inert gas and N 2 (nitrogen) gas is used as an inert gas.

Processing temperature (wafer temperature): 300 ° C to 700 ° C

Process pressure (sub-process chamber pressure) 1 Pa to 4,000 Pa

DCS gas: 100 sccm to 10,000 sccm

O 2 gas: 100 sccm to 10,000 sccm

N 2 gas: 100 sccm to 10,000 sccm

It is possible to appropriately advance the film forming process by setting each process condition to a value within each range.

Next, the relationship between the heating position in the radial direction of the cap heater 34 and the temperature distribution in the lower portion (bottom region) of the processing chamber 6 when the diameter of the wafer 8 is 300 mm will be described.

3A and 3B show simulation results of the temperature distribution in the case where the entire bottom area of the processing chamber is heated (conventional example) in the substrate processing apparatus according to the first embodiment of the present invention. Simulations were carried out with a configuration in which a plurality of, for example, three cap heaters 34 were installed concentrically as a case of heating the entire bottom area.

4 shows a simulation result of the temperature distribution in the case where a part of the bottom area of the treatment chamber is heated to an annular shape (the present invention) in the substrate processing apparatus according to the first embodiment. 4 shows a temperature distribution when the heating position is 70 mm from the center of the treatment chamber 6, that is, the diameter of the cap heater 34 is 140 mm.

3A and 3B, when the temperatures of the cap heaters 34a to 34c are equally (615 占 폚) in the bottom area and when the output of the cap heaters 34a to 34c is equally (12W) , The temperature distribution on the outer peripheral side of the bottom region is high and the temperature on the center side is low, and the temperature difference within the plane of the wafer 8 reaches a maximum of about 4 占 폚. In other words, in the case of a heater having the same configuration as that for heating all the regions of the bottom, a large temperature difference is generated in the surface of the wafer 8, and therefore the in-plane uniformity of the film may be deteriorated.

As a result of intensive studies, the inventors of the present invention have found that when the cap heater 34 is heated around an annular area which is a part of the bottom area in the radial direction, as shown in Fig. 4, And the temperature distribution in the bottom region can be made gentle.

5 and 6, when the heating position in the radial direction (the radius of the cap heater 34) by the cap heater 34 is 90 mm and 110 mm from the center of the process chamber 6, that is, (75 mm) of the radius of the wafer 8a is heated, the in-plane temperature difference of the wafer 8a becomes smaller as compared with the case where the entire area of the bottom is heated. However, a temperature distribution occurs in which the temperature of the outer peripheral side of the lowermost wafer 8a is high and the temperature of the central side is low (see Fig. 5). In addition, the maximum temperature difference within the plane of the wafer 8a is still large, so that the in-plane temperature becomes non-uniform (see Fig. 6). This is because the center side of the wafer 8a is hard to be heated and the outer periphery side of the wafer 8a is double heated by the side heater 2 and the cap heater 34 because there is no heat source on the center side of the wafer 8a Double).

Further, when the heating position in the radial direction by the cap heater 34 is set to 30 mm and 50 mm from the center of the treatment chamber 6, that is, even when the center side is heated more than the middle part of the radius of the wafer 8a in the bottom area, The in-plane temperature distribution of the wafer 8a is improved compared with the case where the entire area of the bottom is heated, but the temperature distribution in the inverse convex shape in which the temperature on the outer peripheral side and the center side is increased in the surface of the lowermost wafer 8a Lt; / RTI > In this case as well, the maximum temperature difference within the plane of the wafer 8a is still large and the in-plane temperature is non-uniform. This is considered to be because the cap heater 34 is too close to the center side, and the heating of the wafer 8a in the vicinity of the middle portion in the radial direction is insufficient.

On the other hand, when the heating position by the cap heater 34 is set to 60 mm or more and 77.5 mm or less from the center of the treatment chamber 6, that is, when the wafer W near the middle portion in the radial direction of the lowermost wafer 8a is heated, The temperature difference did not substantially occur on the outer peripheral side and the center side of the wafer 8a, and a gentle temperature distribution was obtained.

Also, the temperature difference within the plane of the wafer 8a was about 0.6 占 폚 and the in-plane temperature uniformity was improved. In the case where the maximum temperature difference in the plane of the wafer 8a is minimized and the in-plane temperature uniformity is improved, for example, the heating position in the radial direction by the cap heater 34 is set at the center of the wafer 6 ], That is, when the bottom heater is heated to 155 mm with the cap heater 34 having a diameter of 155 mm.

In addition, an improvement of the in-plane temperature distribution was found in the case where the cap heater 34 had an annular region ranging from 60 mm to 180 mm in diameter, compared with the case where all the regions of the bottom were heated. In other words, it is possible to improve the in-plane temperature distribution by heating around the center of the bottom area at the center of the wafer 8a in the bottom area, centered in the annular area having a diameter of 60 mm or more and 180 mm or less. When the diameter of the cap heater 34 is in the range of the circular area smaller than 60 mm or larger than 180 mm, the in-plane temperature distribution is deteriorated due to the temperature difference in the plane of about 2.5 占 폚, and the in-plane uniformity of the film is lowered.

Further, by making the diameter of the cap heater 34 not less than 90 mm and not more than 160 mm, the temperature difference in the surface of the wafer 8a can be made smaller than 2 占 폚, and the improvement of the temperature distribution is further discovered. That is, by heating the inside of the annular region having a diameter of 90 mm or more and 160 mm or less of the bottom region, the temperature distribution can be further improved. In order to further improve the in-plane uniformity in the substrate processing, the temperature difference within the plane of the wafer 8a is preferably 0.6 占 폚 or less, and the diameter of the cap heater 34 is preferably 120 mm or more and 155 mm or less . That is, the diameter of the cap heater 34 is desirably set to an annular region of 120 mm or more and 155 mm or less so as to actively heat the inside of the annular region having a diameter of 120 mm or more and 155 mm or less of the bottom region.

In the above example, the diameter of the wafer is 300 mm, but the diameter of the wafer is not limited to 300 mm. For example, the same effect can be obtained even if the wafer is 150 mm, 200 mm, and 450 mm. That is, if the range of 1/5 to 3/5 of the bottom area is actively heated with respect to the diameter of the wafer, the in-plane temperature distribution is improved. That is, if the diameter of the cap heater 34 is an annular region of 1/5 to 3/5 of the diameter of the wafer, the in-plane temperature distribution is improved. Preferably, if the range from 3/10 to 8/15 of the bottom area is actively heated, the in-plane temperature distribution can be further improved. That is, if the diameter of the cap heater 34 is in the range of 3/10 to 8/15 of the diameter of the wafer or less, the in-plane temperature distribution can be further improved. More preferably, by positively heating the range of 2/5 to 31/60 of the bottom area, the in-plane temperature distribution can be further improved, and the uniformity of the substrate processing can be improved. That is, if the diameter of the cap heater 34 is in the range of 2/5 to 31/60 or less, the in-plane temperature distribution can be further improved, and the in-plane uniformity of the substrate processing can be improved.

As described above, in the process of moving the heating position in the radial direction by the cap heater 34 from the outer periphery side to the center side of the bottom region, that is, in the in-plane temperature of the lowermost wafer 8a is high at the outer periphery side, Plane temperature of the lowermost wafer 8a is high on the outer peripheral side and the center side and the temperature in the plane of the lowermost wafer 8a is between the temperature distribution of the low irregular shape therebetween, There is no temperature distribution.

There is a possibility that the in-plane temperature distribution of the lowermost wafer 8a becomes uniform when the heating position in the radial direction is changed from the outer peripheral side to the center side. Therefore, the heating position where the in-plane temperature distribution of the lowermost wafer 8a is uniform is obtained through experiments and the like, and the uniformity of the substrate processing is improved by obtaining the diameter of the cap heater 34 so as to heat the obtained heating position .

Next, an example of the cap heater 34 of the first embodiment will be described with reference to Figs. 7 to 13. Fig. 7, the cap heater 34 includes a substantially annular heating portion 51 at the upper end and a V-shaped reinforcing portion 52 protruding from both ends of the heat generating portion 51 toward the outer circumferential direction. Here, the heat generating portion 51 is in the form of a ring with a part thereof opened, that is, in the form of an arc (horseshoe shape). 8, the cap heater 34 is provided with a water bottom portion 53 (drooping portion) which is bent at the base portion (outer peripheral side end portion) of the reinforcing portion 52 and extends vertically downward .

On the peripheral surface of the heat insulating portion 31, a first notch 54 is formed over the entire length in the vertical direction. The first notch portion 54 is formed so as to prevent or substantially prevent the water bottom portion 53 from being inserted into and passed through the first notched portion 54 so that the water bottom portion 53 protrudes from the main surface of the heat insulating portion 31 . The water receiving portion 53 is hermetically penetrated through the base 24 and the seal cap 25 and is connected to a power feeding portion which is not shown and the penetration portion of the water receiving portion 53 is connected to a predetermined seal such as a vacuum seam Is sealed by a member.

The position where the first notch 54 is formed, that is, the position where the reinforcing portion 52 is formed is above the gas exhausting portion 17 and the reinforcing portion 52 and the gas exhausting portion 17 are located in the plane direction Match or approximately match.

A plurality of spacers 55 are provided on the upper surface of the heat insulating portion 31 at a predetermined angle pitch between the heat generating portions 51 and a gap is formed between the spacers 55 and the heat generating portion 51. The spacer 55 is formed of a heat insulating member such as quartz and prevents the heat generating portion 51 from directly contacting the heat insulating portion 31 when the cap heater 34 is deformed due to aging deterioration The spacer 55 is formed.

And a second temperature sensor 39 such as a thermocouple is provided on the top surface of the heat generating portion 51 so as to be in contact with the front end portion. The position of the front end of the second temperature sensor 39 is fixed by the support part 56 which is the temperature measuring member supporting part provided on the heat generating part 51. The support section 56 is moved from a position displaced 90 占 from the root section of the reinforcing section 52 to a predetermined angle such as a predetermined angle Lt; RTI ID = 0.0 > 5 < / RTI > The center line of the second temperature sensor 39 is tangent to the imaginary circle (center circle) formed by the center line of the heat generating portion 51 when the second temperature sensor 39 and the heat generating portion 51 are tilted, .

The base end side of the second temperature sensor 39 is directed toward the peripheral edge of the heat insulating portion 31 and bent toward the vertical downward direction at the peripheral edge of the heat insulating portion 31. [ The bent portion of the second temperature sensor 39 is inserted and passed through the second notch 57 formed over the entire length in the vertical direction on the main surface of the heat insulating portion 31 and is passed through a predetermined seal member such as a vacuum seam And is electrically connected to the temperature control unit 38 by airtightly penetrating the base 24 and the seal cap 25.

The second temperature sensor 39 is formed so as not to protrude from the main surface of the heat insulating portion 31 by being inserted and passed through the second notch portion 57 like the water bottom portion 53 of the cap heater 34.

Next, the cap heater 34 will be described in detail with reference to Figs. 10 to 13. Fig. The V-shaped apical angle of the reinforcing portion 52 is, for example, 60 degrees. 10, assuming that the distance between the boundary between the heat generating portion 51 and the reinforcing portion 52 (the length of the V-shaped bottom side (bottom side)) is D1, the heat generating portion 51 and the reinforcing portion 52, Is reduced by the reaction force generated by the distance D1 with respect to the moment M1 in the tangential direction with respect to the main surface of the heat insulating portion 31. [ The distance from the central portion of the heat generating portion 51 to the apex of the V shape is D2 and the distance between the heat generating portion 51 and the reinforcing portion 52 (Moment in the radial direction) M2 in the direction from the heat insulating portion 31 to the boundary portion is reduced by the reaction force generated by the distance D2.

The cap heater 34 includes a quartz protective member 58 of a circular cross section and a lead wire 59 inserted in the protective member 58. The lead wire 59 is made of, It is the conductor of the volume (卷). The conductor 59 forms a heating element, for example, a coil-shaped resistance heating element 61 in the heating portion 51 by using the boundary portion between the heating portion 51 and the reinforcing portion 52 as a heating point. By energizing the resistance heating body 61, the cap heater 34 generates heat.

The lead wires 59 inserted and passed through the heat generating portion 51 are merged in the reinforcing portion 52 and are suspended in the water bottom 53 in the constrained state. The protective glass 62 as an insulating member is mounted in the reinforcing portion 52 in the lead wire 59 and the lead wires 59 are insulated from each other by the protective glass 62.

The protective glass 62 is constituted by, for example, a plurality of connected cylindrical ceramic glasses. Insulating property is ensured between the conductive wires 59 that are held by inserting and passing the conductive wire 59 into the ceramic glass and narrowing the gap between the connected ceramic glass.

Further, only one of the constrained conductive lines 59 is inserted and passed through the protective glass 62 in the water bottom 53. Further, when the diameter of the water receiving portion 53 can be sufficiently secured, both of the restrained lead wires 59 may be inserted into and passed through the protective glass 62.

The lower end of the water receiving portion 53 is sealed in an airtightly and electrically insulated state by a cap 63 formed by an insulating member such as silicone. In other words, the resistance heating body 61 is sealed in the protective member 58 in an electrically insulated state. The lead wire 59 is connected to a power feeding portion which is directed from the lower end of the water bottom 53 in a state covered by an insulating member such as Teflon (registered trademark) and not shown.

As described above, in the present embodiment, one or a plurality of the following effects can be obtained.

(a) Since the heating portion of the cap heater is formed into an arc shape (horseshoe shape) smaller than the diameter of the wafer and the protective member of the cap heater is made of quartz having a small plate thickness, the cap heater can be easily heated and cooled to shorten the recovery time The throughput can be improved.

(b) Since the diameter of the cap heater is made smaller than the diameter of the wafer, the gas is uniformly supplied to the surface of the wafer without inhibiting the flow of the gas flowing from the gas introduction hole toward the gas exhaust portion, Can be improved.

(c) Since the cap heater heats the annular area closer to the center than the peripheral edge of the lowermost wafer, the periphery of the lowermost wafer is prevented from being doubly heated by the side heater and the cap heater, The easily degradable bottom area can be efficiently and uniformly heated, and the in-plane temperature uniformity of the wafer can be improved.

(d) The cap heater includes a V-shaped reinforcing portion protruding from the heat generating portion to the outer periphery. Since the bottom portion is formed by bending the reinforcing portion downward from the root of the reinforcing portion, the strength of the cap heater can be ensured without a separate reinforcing member So that the number of parts can be reduced.

(e) Since the reinforcing portion is located above the gas exhaust portion, even when turbulence is generated in the gas by the V-shaped reinforcing portion, the turbulence can be quickly exhausted so that the generation of turbulence is suppressed and the gas is uniformly supplied to the wafer The in-plane uniformity can be improved.

(f) Since the water bottom is inserted and passed through the first notch portion formed over the entire length in the vertical direction of the heat insulating portion, and the water bottom is prevented from protruding from the main surface of the heat insulating portion, Can be prevented.

(g) Since only one of the constrained conductors is inserted and passed through the protective glass in the water bottom, the inner diameter of the water bottom can be made small, and space saving of the cap heater can be achieved.

(h) Since the cap heater is fixedly installed and the boat is rotated independently of the cap heater, the heating imbalance of the wafer when the cap heater is used can be suppressed, and the wafer can be uniformly heated.

(i) Since the spacer is provided on the upper surface of the heat insulating portion, when the cap heater is deformed due to heat and does not contact directly with the heat insulating portion, heat is not lost to the heat insulating portion, and durability of the cap heater can be improved.

(j) Since the second temperature sensor is provided so as to be in contact with the upper surface of the heating portion of the cap heater, and the temperature of the cap heater can be measured on the side of the wafer to be heated, the accuracy of measurement of the temperature of the cap heater is improved The heating controllability is improved, and the in-plane uniformity of the wafer can be improved.

(k) Since the second temperature sensor is fixed by a support portion provided at a position displaced by a predetermined angle from the position displaced by 90 占 from the root of the reinforcing portion, the contact area between the second temperature sensor and the heat generating portion becomes large, The quartz tube can be heated in a short time, the measurement error can be reduced, and the second temperature sensor can be easily aligned.

(1) By setting the heating position by the cap heater to the middle or the middle of the radius of the wafer, the temperature difference between the outer circumferential side and the center side in the bottom area in the processing chamber becomes small and the bottom area is efficiently and uniformly heated, The in-plane uniformity of the temperature of the substrate can be further improved.

(m) By heating a portion of the lower portion of the processing chamber where the temperature is likely to be lowered by the cap heater, the crack length can be extended downward to the processing chamber, so that the dummy wafer can be reduced. That is, the number of processed wafers can be increased and the productivity can be improved.

Fig. 14 shows a modification of the first embodiment. A cap heater 34 'having a diameter smaller than that of the cap heater 34 is provided concentrically with the cap heater 34. [ Further, the structure of the cap heater 34 'is the same as that of the cap heater 34, and a description thereof will be omitted.

The depth of the notch of the first notched portion 54 is made to be deeper and the depth of the bottom of the cap heater 34 (see FIG. 8) and the bottom of the cap heater 34 ' The lower portion of the water can be provided without protruding from the main surface of the heat insulating portion 31 by being inserted into the first notch portion 54 together.

By providing a plurality of cap heaters 34 and 34 'in the annular region and controlling the respective cap heaters 34 and 34' individually, heating controllability by the cap heaters 34 and 34 ' The bottom area can be heated more effectively and the in-plane temperature uniformity of the wafer 8 can be further improved. 14, only one second temperature sensor 39 is provided. However, by providing the second temperature sensor 39 to each of the cap heaters 34, 34 ', more precise temperature control becomes possible, Can be further improved.

Next, a second embodiment of the present invention will be described with reference to FIG. In Fig. 15, the same components as those in Fig. 7 are denoted by the same reference numerals and description thereof is omitted.

In the second embodiment, the cap heater 34 includes a heating portion 66 having a dual structure in which the outer circumferential portion 66a and the inner circumferential portion 66b are formed into a concentric multi-circle shape. The cap heater 34 is bent along the upper surface of the water bottom portion 53 (see FIG. 8) and the heat insulating portion 31 inserted and passed through the first notched portion 54 and is bent from the water bottom portion 53 to the heat insulating portion 31 extending in a direction perpendicular to the center axis.

The outer circumferential portion 66a is fixed to the prolongation portion 65 on the base end side by welding or the like. The outer circumferential portion 66a and the inner circumferential portion 66b are fixed by welding or the like at a position substantially opposite to the extended portion 65, that is, at the distal end side. Also, on the leading end side, the outer circumferential portions 66a and the inner circumferential portions 66b are not connected to each other, but the leading end of the heat generating portion 66 is separated. That is, the heat generating portion 66 has a double structure in which the outer casing 66a and the inner casing 66b are integrated into one volume. Although not shown in the figure, like the first embodiment, a coil-shaped resistance heating element is sealed in the heating portion 66 with the boundary portion between the extended portion 65 and the outer circumferential portion 66a serving as a heating point.

In the second embodiment, the heat generating portion 66 is doubly made. Therefore, the output of the cap heater 34 can be increased, and the bottom region beneath the processing chamber 6 (see Fig. 1) can be heated more effectively. Since the cap heater 34 can be constituted by one lead 59 (see Fig. 11), the number of the power feed portions may be one for the cap heater 34 including the dual heat generating portions 66, The control system can be simplified and the number of parts can be reduced.

Fig. 16 shows a modification of the second embodiment of the present invention. In the modification of the second embodiment, the cap heater 34 has a reinforcing portion 67 of the same shape as the V-shaped reinforcing portion 52 (see Fig. 7) of the first embodiment in place of the extended portion 65 of the second embodiment .

The lower portion of the reinforcing portion 67 is bent downward to form a lower portion (not shown) so that the cap heater 34 is separated from the heat insulating portion 31 in the direction along the main surface of the heat insulating portion 31 The strength with respect to the direction can be improved.

Next, a third embodiment of the present invention will be described with reference to Figs. 17 and 18. Fig. 7 are denoted by the same reference numerals, and description thereof is omitted.

In the third embodiment, the water receiving portion 53 is formed at the center of the heat generating portion 51 in a plan view. The cap heater 34 includes a leading portion 65 bent in the horizontal direction above the water receiving portion 53 and directed outward from the center of the heat insulating portion 31. The outgoing portions 65 are formed in a pair of I-shaped shapes so as to be connected to both ends of the heat generating portion 51, and are merged into one at the upper end of the water receiving portion 53. The second temperature sensor 39 is formed to be bent from the center of the heat generating portion 51 in the direction opposite to the extending portion 65 along the upper surface of the heat insulating portion 31 to be connected to the side surface of the heat generating portion 51 . The upper end of the water bottom 53 is configured to be larger in diameter than the lower portion of the water bottom 53 because the pair of outgoing portions 65 and the second temperature sensor 39 join together as shown in Fig. The second temperature sensor 39 includes a first sensor 39A for detecting the temperature of the heat generating portion 51 and a second sensor 39B for detecting the temperature in the vicinity of the center of the bottom region.

The heat generating portion 51 is formed in a substantially cardioid shape. In other words, the heat generating portion 51 has a shape in which the cusp of the cardioid type is separated. As in the first embodiment, a coil-shaped resistance heating body is sealed in the heating portion 51 with the boundary portion between the extended portion 65 and the heating portion 51 as a heat generating point. Preferably, the curved portion of the cardioid type is formed in a circular shape. The water bottom portion 53 is provided so as to pass through the hole 30, the seal cap 25, and the base 24.

Since the resistance heating body is sealed up to the tip of the cardioid type, the heating part in the annular area by the heating part 51 can be increased, and the heating performance by the cap heater 34 can be improved. Thereby, the bottom region can be heated more effectively, and the in-plane temperature uniformity of the wafer 8 can be further improved. In addition, since the heat generating portion 51 is supported by the water bottom portion 53 provided at the central position of the heat generating portion 51 in the plan view, the heat generating portion 51 is not sagged or distorted due to aged deterioration. Since the cap heater 34 can be operated in the long term, the productivity can be improved.

In the first embodiment, the second embodiment and the third embodiment, the coil-shaped resistance heating body is exemplified as the heating body, but it goes without saying that a lamp heater such as a halogen lamp may be used as the heating body.

The present invention is preferably applicable not only to the formation of the oxide film exemplified in the foregoing description but also to the formation of the nitride film. For example, the nitride film can be formed by using the source gas exemplified in the above-mentioned description and the NH 3 gas as the reaction gas.

A metal thin film containing a metal element such as titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), or tungsten The present invention can be preferably applied.

(Preferred form of the present invention)

Hereinafter, preferred embodiments of the present invention will be described in detail.

(Annex 1)

According to one aspect of the present invention,

A substrate support for holding a plurality of substrates;

A heat insulating part provided below the substrate supporting part;

A reaction tube including therein a processing chamber for processing the substrate;

A first heating unit disposed around the reaction tube;

A second heating part provided between the substrate holding part and the heat insulating part;

And,

The second heating unit

A substantially annular heating portion; And

A water bottom which is directed downward from the heat generating portion;

Lt; / RTI >

And the heat generating portion is housed in an annular region having a diameter smaller than the diameter of the substrate.

(Annex 2)

As the apparatus described in appendix 1,

The diameter of the annular area is 1/5 to 3/5 of the diameter of the substrate.

(Annex 3)

As the apparatus described in Annex 1 or Annex 2,

And a temperature measuring member connected to a surface of the heat generating portion.

(Note 4)

As an apparatus according to any of App. 1 to 3,

Wherein the first heating unit comprises:

An upper heater for heating an upper region in which the substrate support in the treatment chamber is accommodated; And

A lower heater for heating a lower region in which the heat insulating portion in the treatment chamber is accommodated;

And,

The heating portion is provided at least at a height equal to or higher than a height position of a boundary between the upper heater and the lower heater.

(Note 5)

As the apparatus described in note 4,

The temperature of the heat generating portion is lower than the temperature of the lower heater.

(Note 6)

As an apparatus described in appended claims 1 to 3,

The heat generating portion has an arc shape (horseshoe shape).

(Note 7)

As the apparatus described in note 4,

And the second heating portion includes a V-shaped reinforcing portion protruding from the heat generating portion toward the outer peripheral side.

(Annex 8)

Preferably, the second heating unit further comprises a temperature measurement member support portion provided on the heat generation portion, wherein the temperature measurement member is in contact with the upper surface of the heat generation portion by the temperature measurement member support portion .

(Note 9)

As the apparatus described in note 8,

The temperature measurement member support portion is provided at a position where the center line of the temperature detector is tangent to the imaginary circle formed by the center line of the heat generation portion or at a position where the center line of the temperature detector is substantially tangential.

(Note 10)

As the apparatus described in note 7,

The base portion of the reinforcing portion and the water bottom portion are connected to each other. In the water bottom portion, the insulating member is mounted on only one of the pair of heat generating elements.

(Note 11)

As the apparatus described in note 8,

And a spacer provided on an upper surface of the heat insulating portion and below the heat generating portion,

A gap is formed between the spacer and the heat generating portion.

(Note 12)

As the apparatus described in Note 11,

The reinforcing portion is provided above the exhaust portion of the treatment chamber.

(Note 13)

As the apparatus described in Annex 1 or Annex 2,

A plurality of the second heating portions are provided concentrically.

(Note 14)

As the apparatus described in Annex 1 or Annex 2,

Wherein the heating portion includes an outer circumferential portion and an inner circumferential portion provided in a circular concentric circle shape and the outer circumferential portion is connected to the reinforcing portion at the base end side and the outer circumferential portion and the inner circumferential portion are connected at the distal end side .

(Annex 15)

As an apparatus described in appended claims 1 to 14,

Further comprising a notch portion formed over the whole length of the main surface of the heat insulating portion in the up and down direction, and the water bottom is inserted and penetrated into the notch portion.

(Note 16)

As the apparatus described in Annex 1 or Annex 2,

The heating portion is formed in a cardioid shape.

(Note 17)

As the apparatus described in note 16,

And the water bottom is formed at a central position of the heat generating portion in a plan view.

(Note 18)

As the apparatus described in Note 2,

The diameter of the annular area is 1/5 to 3/5 of the diameter of the substrate.

(Note 19)

As the apparatus described in note 18,

The diameter of the annular region is 3/10 or more and 8/15 or less of the diameter of the substrate.

(Note 20)

As an apparatus described in appended claims 1 to 19,

The diameter of the heat generating portion is a value capable of heating a position where the in-plane temperature distribution of the substrate at the lowermost end becomes uniform.

(Note 21)

According to another aspect of the present invention,

A step of bringing a substrate support provided above the heat insulating portion and holding a plurality of substrates into a treatment chamber;

Heating the inside of the processing chamber by a first heating portion provided around the processing chamber and a substantially annular second heating portion provided between the substrate holding portion and the heat insulating portion; And

Supplying a process gas into the process chamber;

/ RTI >

The substrate processing method or the semiconductor device manufacturing method for heating the bottom area in the processing chamber by the heat generating part of the second heating part formed to be accommodated in the annular area having a diameter smaller than the diameter of the substrate in the step of heating the inside of the processing chamber / RTI >

(Note 22)

According to another aspect of the present invention,

A step of bringing a substrate support provided above the heat insulating portion and holding a plurality of substrates into a process chamber;

Heating the inside of the processing chamber by a first heating part provided around the processing chamber and a substantially annular second heating part provided between the substrate holding part and the heat insulating part; And

Supplying a process gas into the process chamber;

Lt; / RTI >

Wherein the step of heating the inside of the processing chamber comprises the step of causing a computer to execute a program for causing the computer to heat the bottom area in the processing chamber by a heating part of the second heating part formed to be accommodated in an annular area having a diameter smaller than the diameter of the substrate, A computer-readable recording medium is provided.

(Annex 23)

According to another aspect of the present invention,

There is provided a heating unit provided between a substrate holding unit for holding a plurality of substrates and a heat insulating unit provided below the substrate holding unit,

The heating unit includes:

A substantially annular heating portion; And

A water bottom extending (extending) downward from the heat generating portion;

Lt; / RTI >

The heating portion is configured so that the heating portion is housed in an annular region having a diameter smaller than the diameter of the substrate.

(Note 24)

According to another aspect of the present invention,

A substrate support for holding a substrate;

A heat insulating part provided below the substrate supporting part;

A reaction tube including a processing chamber for processing a substrate therein;

A first heating unit installed to surround the reaction tube; And

A second heating part provided between the substrate holding part and the heat insulating part;

And,

The second heating portion is an annular shape having a diameter smaller than the diameter of the substrate and is configured to heat a part of the lower portion of the processing chamber in the radial direction.

(Annex 25)

According to another aspect of the present invention,

A step of charging a substrate backplane for holding a substrate into a processing chamber;

Heating the inside of the processing chamber by a first heating section and a second heating section;

Supplying and exhausting a process gas into the process chamber; And

A step of removing the substrate support from the processing chamber;

/ RTI >

Wherein the step of heating the inside of the processing chamber heats the portion of the substrate in the radial direction from the lower side of the substrate support to the center of the substrate by the second heating portion in an annular shape, do.

2: side heater 6: treatment chamber
7: boat 31:
34: cap heater 38: temperature controller
51, 66: heat generating portion 53: water bottom
61: Resistance heating element

Claims (15)

A substrate holder (holder) for holding a plurality of substrates;
A heat insulating portion provided below (below) the substrate supporting portion;
A processing chamber for accommodating the substrate support and processing the plurality of substrates;
A first heating unit installed around the treatment chamber and heating the inside of the treatment chamber from a side portion; And
A second heating unit disposed in the processing chamber and disposed between the substrate holding unit and the heat insulating unit;
And,
The second heating unit
A substantially annular heating portion; And
A lower portion (extending portion) extending downward (extending) from the heat generating portion;
Lt; / RTI >
Wherein the heat generating portion is housed in an annular region having a diameter smaller than the diameter of the plurality of substrates. The method according to claim 1,
Wherein the diameter of the annular area is 1/5 to 3/5 of the diameter of the plurality of substrates. The method according to claim 1,
And a temperature measuring member connected to a surface of the heat generating portion. The method according to claim 1,
Wherein the first heating unit comprises:
An upper heater for heating an upper region in which the substrate support in the treatment chamber is accommodated; And
A lower heater for heating a lower region in which the heat insulating portion in the treatment chamber is accommodated;
And,
Wherein the heat generating portion is installed at least at a height equal to or higher than a height of a boundary between the upper heater and the lower heater. 5. The method of claim 4,
Wherein the temperature of the heat generating portion is equal to or lower than the temperature of the lower heater. The method according to claim 1,
Wherein the heat generating portion has a horseshoe shape. The method of claim 3,
Wherein the second heating part further comprises a temperature measurement member support part provided on the heating part, and the temperature measurement member is held in contact with the upper surface of the heating part by the temperature measurement member support part. The method according to claim 1,
Wherein one lead wire is sealed in the second heating portion and the lead wire forms a resistance heating element in the heating portion. The method according to claim 1,
And the second heating portion includes a V-shaped reinforcing portion protruding from the heat generating portion toward the outer peripheral side. 8. The method of claim 7,
And a spacer provided on an upper surface of the heat insulating portion and below the heat generating portion,
And a gap is formed between the spacer and the heating unit. The method according to claim 1,
Wherein a notch portion is formed in the heat insulating portion over the entire length in the vertical direction, and the water bottom is inserted and passed through the notch portion. The method according to claim 1,
Wherein the heat generating portion has a cardioid shape. 13. The method of claim 12,
And the water bottom is disposed at a central position of the heat generating portion when viewed from above. There is provided a heating unit provided between a substrate holding unit for holding a plurality of substrates and a heat insulating unit provided below the substrate holding unit,
The heating unit includes:
A substantially annular heating portion; And
A water bottom which is directed downward from the heat generating portion;
Lt; / RTI >
And the heating portion is configured to be accommodated in an annular region having a diameter smaller than the diameter of the substrate. A step of bringing a substrate support provided above the heat insulating portion and holding a plurality of substrates into a treatment chamber;
A first heating portion provided around the processing chamber and a second heating portion provided between the substrate holding portion and the heat insulating portion and including a substantially annular heating portion and a water bottom extending downward from the heating portion, Heating the inside of the treatment chamber by a heating unit; And
Supplying a process gas into the process chamber;
/ RTI >
Wherein in the step of heating the inside of the processing chamber, the bottom region in the processing chamber is heated by the heat generating portion formed to be accommodated in an annular region having a diameter smaller than the diameter of the plurality of substrates.
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