KR20160099884A - Semiconductor Device - Google Patents
Semiconductor Device Download PDFInfo
- Publication number
- KR20160099884A KR20160099884A KR1020150022134A KR20150022134A KR20160099884A KR 20160099884 A KR20160099884 A KR 20160099884A KR 1020150022134 A KR1020150022134 A KR 1020150022134A KR 20150022134 A KR20150022134 A KR 20150022134A KR 20160099884 A KR20160099884 A KR 20160099884A
- Authority
- KR
- South Korea
- Prior art keywords
- subgate
- insulating film
- region
- gate
- electrode
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 claims description 18
- 230000000149 penetrating effect Effects 0.000 claims 4
- 239000012535 impurity Substances 0.000 description 13
- 230000003071 parasitic effect Effects 0.000 description 12
- 239000000758 substrate Substances 0.000 description 9
- 230000010355 oscillation Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7845—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being a conductive material, e.g. silicided S/D or Gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Abstract
[0001] The present invention relates to a semiconductor device, and more particularly, to a semiconductor device having a semiconductor device including an emitter section into which a carrier flows, a drift section through which a carrier flowing in from the emitter section moves, a plurality of gates that form a channel to move a carrier introduced from the emitter to a drift section, And a collector portion through which a carrier moving through the drift portion is discharged, wherein the subgate includes a emitter electrode and a subgate insulating film surrounding the emitter electrode, and the subgate insulating film The thickness of the portion arranged in the direction toward the collector portion is larger than the thickness of the portion facing the other direction.
Description
The present invention relates to a semiconductor device.
Generally, a power semiconductor device is widely used as a control device of a motor or various kinds of switching devices such as an inverter. Specifically, a power semiconductor device means a semiconductor device used in a power device, and is a core of a power device optimized for power conversion and control.
Typical types of power semiconductor devices include metal oxide semiconductor field effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs).
Power semiconductor devices (MOSFETs or IGBTs) must have high breakdown voltages and low on-resistance values in DC characteristics and fast switching speeds in AC characteristics.
Further, in the power semiconductor device, the flow of current should be cut off in the switch-off operation, and the channel should be made small in order to effectively cut off the current. At this time, the gate contributing to the channel formation is only a part of the total number of gates, and the gate not contributing to the channel formation can form a parasitic capacitance. This parasitic capacitance increases the delay time of the switching operation, increases the conduction loss, and causes an oscillation of the gate signal in the short-circuit evaluation, thereby causing current oscillation and faulty power semiconductor devices .
An object of the present invention is to provide a semiconductor device capable of reducing parasitic capacitance and switching loss.
A semiconductor device according to an embodiment of the present invention includes: an emitter section through which a carrier flows; a drift section through which a carrier introduced from the emitter section moves; a plurality of gates that form a channel for moving a carrier introduced from the emitter to a drift section A subgate formed between the gate and the collector, and a collector for transferring the carrier to and from the drift portion, wherein the subgate includes a emitter electrode and a subgate insulating film surrounding the emitter electrode, The thickness of the portion disposed in the direction toward the collector portion is thicker than the thickness of the portion disposed in the portion facing the other direction.
A semiconductor device according to an embodiment of the present invention includes a first region of a first conductivity type, a second region of a second conductivity type disposed over the first region, a gate electrode disposed in each of the second region, A first gate and a second gate arranged to penetrate from the second region to a portion of the first region and including a gate insulating film, and a portion of the first region from the second region to the first region between the first gate and the second gate Wherein the subgate includes a subgate electrode disposed inside and a subgate insulating film surrounding the subgate electrode, wherein the subgate insulating film is in contact with a lower surface of the subgate electrode The thickness of the portion is thicker than the thickness of the other portions of the subgate insulating film.
A semiconductor device according to another embodiment of the present invention includes a first region of a first conductivity type, a second region of a second conductivity type disposed over the first region, a gate electrode disposed in each of the second region, A first gate and a second gate arranged to penetrate from the second region to a portion of the first region and a second gate and a second gate disposed between the first region and the second gate, And the subgate includes a subgate electrode disposed therein, a subgate dielectric film surrounding the subgate electrode, and a dummy dielectric film extending in a downward direction of the subgate dielectric film do.
The semiconductor device according to the embodiment of the present invention can reduce the parasitic capacitance and the switching loss.
1 is a plan view showing a semiconductor device according to an embodiment of the present invention in which an emitter electrode is omitted.
FIG. 2 is a cross-sectional view of FIG. 1 cut along AA 'and additionally showing an emitter electrode. FIG.
3 is a plan view showing a semiconductor device according to another embodiment of the present invention, in which the emitter electrode is omitted.
FIG. 4 is a cross-sectional view of FIG. 3 cut along BB 'and additionally showing an emitter electrode. FIG.
The embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Furthermore, embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shapes and sizes of the elements in the drawings may be exaggerated for clarity of description, and the elements denoted by the same reference numerals in the drawings are the same elements.
The various embodiments disclosed herein are not limited to a particular type of semiconductor device, but may be applied to other types of semiconductor devices including, for example, MOSFETs, power IGBTs, and various types of thyristors.
Also, the first conductivity type may be an N-type impurity doped with an N-type impurity, and in this case, the second conductivity type may be a P-type doped with a P-type impurity. Conversely, the first conductivity type may be P-type and the second conductivity type may be N-type. The N-type and P-type impurities are generally used in semiconductors. The N-type impurities include phosphorus (P), arsenic (As), and the P-type impurities may include boron (B) and the like.
FIG. 1 is a plan view showing a
1 and 2, a
The emitter part is connected to an external power source and serves to supply a carrier to the drift part. The carrier may be electron or hole. The drift portion is a region where carriers supplied from the emitter portion move. The drift unit may be divided into a plurality of regions of a first conductivity type or a second conductivity type. The carrier moved through the drift unit may be discharged to the outside of the drift unit through the collector unit. Further, the carrier can be moved to the drift portion through the collector portion. In FIG. 2, the emitter portion may correspond to the
The
A channel is formed in a part of the drift region and the carrier can move through the channel in an ON state in which a voltage higher than a specific value is applied to the
In FIG. 2, the collector unit may correspond to the
The
In general, the power semiconductor device is required to cut off the current flow during the switch-off operation and to reduce the channel for effective current shutdown. At this time, a parasitic capacitance can be formed between the gate and the collector electrode. Such parasitic capacitance and hole accumulation increase the delay time of the switching operation, increase the conduction loss, cause oscillation of the gate signal in the short-circuit evaluation, and cause occurrence of current oscillation, It can cause defects.
The
The
The
Thus, the parasitic capacitance generated between the
The portion of the subgate
The
Referring to FIG. 2, the
1 and 2, a
A
The
As described above, generally, in the power semiconductor device, the flow of current should be cut off in the switch-off operation, and the channel should be made small in order to effectively cut off the current. At this time, a parasitic capacitance can be formed between the gate and the collector electrode. Such parasitic capacitance and hole accumulation increase the delay time of the switching operation, increase the conduction loss, cause oscillation of the gate signal in the short-circuit evaluation, and cause occurrence of current oscillation, It can cause defects.
The
The
The
The semiconductor substrate on which the
The
The
The
The
Referring to FIG. 2, when a plurality of
The
The
The
The
The
The
The
3 is a plan view of the
3 and 4, a
Since the
The
The
The
The
Since the
The
The present invention is not limited by the above-described embodiments and the accompanying drawings, but is intended to be limited only by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.
100, 200: semiconductor element
111, 211: first region
112, < / RTI > 212:
113, 213: the third region
114, 214: fourth region
115, 215: fifth region
116, 216: sixth region
120, 120a, 120b, 220, 220a, 220b:
121, 121a, 121b, 221, 221a, 221b:
122, 122a, 122b, 222, 222a, and 222b:
130, 130a, 130b, 230, 230a, 230b:
131, 131a, 131b, 231, 231a, 231b:
132: connecting electrode
133 and 233: Sub-
234a, 234b: a dummy insulating film
140, 240: Emitter electrode
150, 250: collector electrode
160, 260: gate bus
Claims (16)
A drift portion through which the carrier introduced from the emitter portion moves;
A plurality of gates forming a channel such that the carrier introduced from the emitter moves to the drift portion;
A subgate formed between the gates; And
And a collector unit for transferring the carrier to and from the drift unit,
Wherein the subgate includes a emitter electrode and a subgate insulating film surrounding the emitter electrode, wherein a thickness of a portion of the subgate insulating film that is disposed in a direction toward the collector portion is thicker than a thickness of a portion of the subgate insulating film that faces the other direction Semiconductor device.
Wherein the subgate further comprises a connection electrode connecting two or more subgate electrodes included in the two or more subgates between the gates.
Wherein the subgate insulating film surrounds the subgate electrode and the connecting electrode, and a portion of the subgate insulating film facing the subgate electrode is thicker than a thickness of a portion of the subgate insulating film facing the collector electrode, Semiconductor device.
And a fifth region, which is a second conductivity type, disposed in a portion surrounded by a portion in contact with the sub gate electrode and a portion in contact with the connection electrode among the portions arranged in the direction toward the collector portion of the sub gate insulating film in the drift portion Semiconductor device.
Wherein the gate and the sub gate are disposed intruding into the drift portion, and the sub gate electrode is disposed to penetrate the drift portion.
A second region disposed over the first region and being a second conductive type;
A first gate and a second gate including a gate electrode disposed in each of the first region and the gate electrode and a gate insulating film surrounding the gate electrode, the first gate and the second gate penetrating from the second region to a portion of the first region; And
And a subgate disposed between the first gate and the second gate so as to penetrate from the second region to a portion of the first region,
Wherein the subgate includes a subgate electrode disposed inside and a subgate insulating film surrounding the subgate electrode, wherein a thickness of a portion of the subgate insulating film that is in contact with a lower surface of the subgate electrode is different from that of the subgate insulating film The thickness of the semiconductor element being greater than the thickness of the portion.
Wherein the subgate disposed between the first and second gates is at least two, and further comprises a connecting electrode connecting the side surfaces of the respective subgate electrodes.
Wherein the subgate insulating film surrounds the subgate electrode and the connecting electrode and the thickness of the subgate insulating film contacting the bottom surface of the subgate electrode is thicker than the thickness of the subgate insulating film contacting the bottom surface of the connecting electrode.
And a fifth region disposed under the emitter gate insulating film in contact with the lower surface of the connection electrode and being a second conductive type.
The depth penetrated by the subgate and the depth penetrating the gate are the same.
A second region disposed over the first region and being a second conductive type;
A first gate and a second gate including a gate electrode disposed in each of the first region and the gate electrode and a gate insulating film surrounding the gate electrode, the first gate and the second gate penetrating from the second region to a portion of the first region; And
And a subgate disposed between the first gate and the second gate so as to penetrate from the second region to a portion of the first region,
Wherein the subgate includes a subgate electrode disposed inside, a subgate insulating film surrounding the subgate electrode, and a dummy insulating film extending in a downward direction of the subgate insulating film.
The depth penetrated by the subgate and the depth penetrating the gate are the same.
Wherein the dummy insulating film includes a first dummy insulating film and a second dummy insulating film spaced apart from each other.
And a fifth region which is disposed between the first dummy insulating film and the second dummy insulating film and is of the second conductivity type.
Wherein the dummy insulating film includes a first dummy insulating film extending in a downward direction from a lower surface of the subgate insulating film in contact with a side surface of the subgate insulating film facing one side of the first gate, And a second dummy insulating film extending downward from a lower surface of the subgate insulating film in contact with a side surface of the subgate insulating film opposite to the first dummy insulating film, wherein the first dummy insulating film and the second dummy insulating film are spaced apart from each other device.
And a fifth region which is disposed between the first dummy insulating film and the second dummy insulating film and is of the second conductivity type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150022134A KR20160099884A (en) | 2015-02-13 | 2015-02-13 | Semiconductor Device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150022134A KR20160099884A (en) | 2015-02-13 | 2015-02-13 | Semiconductor Device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20160099884A true KR20160099884A (en) | 2016-08-23 |
Family
ID=56875308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150022134A KR20160099884A (en) | 2015-02-13 | 2015-02-13 | Semiconductor Device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20160099884A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130035399A (en) | 2011-09-30 | 2013-04-09 | 주식회사 케이이씨 | Power semiconductor device |
-
2015
- 2015-02-13 KR KR1020150022134A patent/KR20160099884A/en unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130035399A (en) | 2011-09-30 | 2013-04-09 | 주식회사 케이이씨 | Power semiconductor device |
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