KR102013226B1 - A insulated gate bipolar transistor - Google Patents

A insulated gate bipolar transistor Download PDF

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KR102013226B1
KR102013226B1 KR1020120130550A KR20120130550A KR102013226B1 KR 102013226 B1 KR102013226 B1 KR 102013226B1 KR 1020120130550 A KR1020120130550 A KR 1020120130550A KR 20120130550 A KR20120130550 A KR 20120130550A KR 102013226 B1 KR102013226 B1 KR 102013226B1
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South Korea
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region
conductivity type
electrode
semiconductor substrate
emitter
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KR1020120130550A
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Korean (ko)
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KR20140063327A (en
Inventor
양일석
김종대
구용서
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한국전자통신연구원
단국대학교 산학협력단
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Priority to KR1020120130550A priority Critical patent/KR102013226B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]

Abstract

The lateral insulated gate bipolar transistor according to an embodiment of the present invention may include a semiconductor substrate of a first conductivity type, a drift region of a second conductivity type formed on the semiconductor substrate of the first conductivity type, and a semiconductor substrate of the first conductivity type. A gate electrode disposed on the first electrode, the first emitter electrode disposed on the semiconductor substrate of the first conductivity type so as to be adjacent to one side of the gate electrode, and the gate electrode spaced apart from the gate electrode. The collector electrode disposed on the second conductive semiconductor substrate so as to be adjacent to the other side of the electrode, the second emitter electrode disposed between the gate electrode and the collector electrode, and within the drift region of the second conductive type. And a trench insulating film formed between the second emitter electrode and the collector electrode.

Description

Insulated gate bipolar transistor

The present invention relates to an insulated gate bipolar transistor, and more particularly, to a lateral insulated gate bipolar transistor.

The power industry is becoming increasingly important because of the rapid development of the IT industry and energy efficiency issues. Sustaining the power industry is silicon-oriented semiconductor technology. Insulated gate bipolar transistor is a power switching device that combines the advantages of metal oxide semiconductor field effect transistor (MOSFET) and bipolar junction transisrtor (BJT). .

Since insulated gate bipolar transistors were invented by BJ Baliga in the 1980s, they can overcome the complex current control circuits of bipolar transistors, slow switching speed problems, low breakdown characteristics of insulated gate transistors, and poor current control. It is received as a substitute element.

The insulated gate bipolar transistor may be divided into a vertical insulated gate bipolar transistor (VIGBT) and a horizontal insulated gate bipolar transistor (LIGBT). Among these, the horizontally insulated gate bipolar transistors can be arranged in a plane and are easily isolated between devices, thereby enabling one-chip integration with power integrated circuits such as IPM (Intelligent Power Module) or PMIC (Power Management IC).

The problem to be solved by the present invention relates to an insulated gate bipolar transistor with improved electrical characteristics.

The problem to be solved by the present invention is not limited to the above-mentioned problem, another task that is not mentioned will be clearly understood by those skilled in the art from the following description.

 The lateral insulated gate bipolar transistor according to an embodiment of the present invention may include a semiconductor substrate of a first conductivity type, a drift region of a second conductivity type formed on the semiconductor substrate of the first conductivity type, and a semiconductor substrate of the first conductivity type. A gate electrode disposed on the first electrode, the first emitter electrode disposed on the semiconductor substrate of the first conductivity type so as to be adjacent to one side of the gate electrode, and the gate electrode spaced apart from the gate electrode. The collector electrode disposed on the second conductive semiconductor substrate so as to be adjacent to the other side of the electrode, the second emitter electrode disposed between the gate electrode and the collector electrode, and within the drift region of the second conductive type. And a trench insulating film formed between the second emitter electrode and the collector electrode.

Insulated gate bipolar transistor according to an embodiment of the present invention forms a trench insulating film disposed between the second emitter electrode and the collector electrode in the drift region of the second conductivity type to high breakdown without increasing the third drift length (L3) May have a voltage.

1 is a cross-sectional view of a general horizontal insulated gate bipolar transistor.
2 is a cross-sectional view of a lateral insulated gate bipolar transistor in which two general emitters are formed.
3 is a cross-sectional view of a lateral insulated gate bipolar transistor according to an exemplary embodiment of the present invention.
FIG. 4 is a photograph showing holes flow during turn-off of a lateral insulated gate bipolar transistor according to an exemplary embodiment of the present invention.
5 is a graph comparing latch-up characteristics of a general horizontal insulated gate bipolar transistor and a horizontal insulated gate bipolar transistor of the present invention.
6 is a graph comparing breakdown voltage characteristics of the lateral insulated gate bipolar transistors illustrated in FIGS. 1 to 3.

Advantages and features of the present invention, and methods for achieving them will be apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In this specification, the singular also includes the plural unless specifically stated otherwise in the phrase. As used herein, the words "comprises" and / or "comprising" refer to the presence of one or more other components, steps, operations and / or elements. Or does not exclude additions.

In addition, the embodiments described herein will be described with reference to cross-sectional and / or plan views, which are ideal exemplary views of the present invention. In the drawings, the thicknesses of films and regions are exaggerated for effective explanation of technical content. Accordingly, shapes of the exemplary views may be modified by manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention are not limited to the specific forms shown, but also include variations in forms generated by the manufacturing process. For example, the etched regions shown at right angles may be rounded or have a predetermined curvature. Accordingly, the regions illustrated in the figures have schematic attributes, and the shape of the regions illustrated in the figures is intended to illustrate a particular form of region of the device and not to limit the scope of the invention.

1 is a cross-sectional view of a general horizontal insulated gate bipolar transistor.

Referring to FIG. 1, the semiconductor substrate 101 of the first conductivity type may include a drift region 103 of the second conductivity type.

The first conductive semiconductor substrate 101 may be, for example, a semiconductor substrate doped with a P type. The drift region 103 of the second conductivity type may be a remaining region except for a portion of a lower region of the semiconductor substrate 101 of the first conductivity type. The drift region 103 of the second conductivity type may be, for example, an N-type doped region.

A gate electrode 121 may be disposed on an upper surface of the first conductive semiconductor substrate 101, and each of the first electrodes may be spaced apart from the gate electrode 121 and disposed at both sides of the gate electrode 121. Emitter electrode 137 and collector electrode 115 may be formed. The separation distance between the gate electrode 121 and the first emitter electrode 137 may be shorter than the separation distance between the gate electrode 121 and the collector electrode 115.

A first base region 131 adjacent to the first emitter electrode 137 may be formed in the drift region 103 of the second conductivity type. A second conductivity type well region 111 adjacent to the collector electrode 115 may be formed in the second conductivity type drift region 103. The first base region 131 and the second conductive well region 111 may be formed to be spaced apart from each other. The first base region 131 may be a p-type doped region, and the second conductivity type well region 111 may be an n-type doped region.

The first base region 131 may include a first emitter region 133 and a second emitter region 135. The first emitter region 133 and the second emitter region 135 may be disposed on both sides of the first emitter electrode 137. The first emitter region 133 and the second emitter region 135 may be formed to contact each other. The first emitter region 133 may be a p-type doped region, and the second emitter region 135 may be an n-type doped region. The second conductivity type well region 111 may include a collector region 113. The collector region 113 may be formed to be adjacent to the collector electrode 115. The collector region 113 may be a p-type doped region.

In the horizontal insulating gate bipolar transistor 100, when a voltage equal to or greater than a threshold voltage is applied to the gate electrode 121, an N − − channel may be formed on a surface of the first base region 131 doped with a p-type. Electrons are introduced into the drift region 103 of the second conductivity type adjacent to the first base region 131 through the N − − channel formed on the surface of the first base region 131. Accordingly, the PNP bipolar configured by the collector region 113, the drift region 103 of the second conductivity type, and the first emitter region 133 may be operated. The length between the first base region 131 and the well region 111 of the second conductivity type may be a first drift length L1.

When a positive voltage is applied to the collector electrode 115, holes are injected into the drift region 103 of the second conductivity type adjacent to the collector region 113, and the holes may open the first base region 131. It exits to the first emitter electrode 137 through. That is, current flows to the first base region 131. In this case, when the current rises by a predetermined level or more, the PNPN including the collector region 113, the drift region 103 of the second conductivity type, the first base region 131, and the second emitter region 135 is formed. The thyristor is activated. When the PNPN thyristor is operated, latch-up due to parasitic thyristors may occur. When the latch-up occurs, it is impossible to control the current to the gate electrode 121.

2 is a cross-sectional view of a lateral insulated gate bipolar transistor in which two general emitters are formed.

For brevity of description, descriptions of technical and structural features that overlap with the embodiments described with reference to FIG. 1 will be omitted.

Referring to FIG. 2, a second emitter electrode 241 may be formed on the upper surface of the first conductive semiconductor substrate 101 between the gate electrode 121 and the collector electrode 115. In detail, the separation distance between the gate electrode 121 and the second emitter electrode 241 may be shorter than the separation distance between the second emitter electrode 241 and the collector electrode 113. A second base region 243 adjacent to the second emitter electrode 241 may be formed in the drift region 103 of the second conductivity type. The second base region 243 may be formed to be spaced apart from the first base region 131 and the well region 111 of the second conductivity type. In detail, the separation distance between the second base region 243 and the first base region 131 is greater than the separation distance between the second base region 243 and the well region 111 of the second conductivity type. It can be short. The first base region 131 and the second base region 243 may have the same depth. The second base region 243 may be a p-type doped region.

The second base area 243 may include a third emitter area 245 and a fourth emitter area 247. The third emitter region 245 and the fourth emitter region 247 may be disposed on both sides of the second emitter electrode 241. The third emitter region 245 and the fourth emitter region 247 may be formed to contact each other. The third emitter region 245 may be an n-type doped region, and the fourth emitter region 247 may be a p-type doped region.

The horizontal insulated gate bipolar transistor 200 has N − on the surfaces of the first base region 131 and the second base region 243 doped with p-type when a voltage equal to or greater than a threshold voltage is applied to the gate electrode 121. - a channel can be formed. That is, two N − − channels are formed in the drift region 103 of the second conductivity type. Accordingly, the amount of electrons flowing into the drift region 103 of the second conductivity type is increased as compared to the horizontally insulated gate bipolar transistor 100 having one emitter electrode 137 of FIG. 1. Thus, the lateral insulated gate bipolar transistor 200 may have a low forward voltage.

In addition, when the second emitter electrode 241 is further formed, the current flows in the first base region 131 and the second base region 243 so that the horizontal type having one emitter electrode. The latch-up phenomenon generated in the insulated gate bipolar transistor 100 can be reduced.

When the second emitter electrode 241 is formed, the second drift length L2 formed between the second base region 243 and the second conductivity type well region 111 is the first in FIG. 1. It may be shorter than the first drift length L1 formed between the base region and the well region of the second conductivity type. The drift length is directly proportional to the breakdown voltage of the lateral insulated gate bipolar transistor. Thus, the lateral insulated gate bipolar transistor 200 comprising two first and second emitter electrodes 137 and 241 includes the lateral insulated gate bipolar including one first emitter electrode 137. It has a lower breakdown voltage than the transistor 100.

3 is a cross-sectional view of a lateral insulated gate bipolar transistor according to an exemplary embodiment of the present invention.

For brevity of description, descriptions of technical and structural features overlapping with the embodiments described with reference to FIG. 2 will be omitted.

Referring to FIG. 3, a trench insulating layer 311 disposed between the second base region 243 and the second conductivity type well region 111 may be formed in the drift region 103 of the second conductivity type.

An upper surface of the trench insulating layer 311 may be exposed to an upper surface of the semiconductor substrate 101 of the first conductivity type. A width of an upper surface of the trench insulating layer 311 may be wider than a width of a lower surface of the trench insulating layer 311. In detail, the trench insulating layer 311 may include an upper region and a lower region, and the width of the upper region of the trench insulating layer 311 may be wider than the width of the lower region of the trench. One side of the upper portion of the trench insulating layer 311 may be in contact with the second base region 243, and the other side of the upper portion of the trench insulating layer 311 may be the well region 111 of the second conductivity type. ) May be contacted.

The maximum depth of the trench insulating layer 311 may be shallower than or the same as that of the second base region 243 and the second conductive type well region 111. The trench insulating layer 311 may include silicon oxide (SiO 2 ) and silicon nitride (Si 3 N 4 ).

The length between the second base region 243 and the second conductivity type well region 111 may be a third drift length L3. The third drift length L3 is shorter than the first drift length L1 shown in FIG. 1 and may be equal to the second drift length L2 shown in FIG. 2.

The trench insulating layer 311 may be formed to increase the breakdown voltage while maintaining the third drift length L3. By distributing an electric field on the surface of the trench insulating layer 311, the breakdown voltage of the lateral insulating gate bipolar transistor 300 may be increased. That is, the lateral insulated gate bipolar transistor 300 may improve the latch-up phenomenon described with reference to FIG. 1 and the low breakdown voltage described with reference to FIG. 2.

FIG. 4 is a photograph showing holes flow during turn-off of a lateral insulated gate bipolar transistor according to an exemplary embodiment of the present invention.

Referring to FIG. 4, when the lateral insulated gate bipolar transistor 300 shown in FIG. 3 is turned off, holes remaining in the drift region 103 of the second conductivity type pass through the first base region 131. It can be seen that the first emitter region 133 passes through the second base region 243 and exits to the fourth emitter region 247. Thus, the lateral insulated gate bipolar transistor 300 may have a faster turn-off time.

5 is a graph comparing latch-up characteristics of a general horizontal insulated gate bipolar transistor and a horizontal insulated gate bipolar transistor of the present invention.

Referring to FIG. 5, (A) is a lateral insulated gate bipolar transistor 100 having one emitter electrode shown in FIG. 1, and (B) is two emitter electrodes and a trench insulating film shown in FIG. 3. It is a lateral insulated gate bipolar transistor 300 having a.

Latch A - up current is about 1.0x10 -4, latch B - up current is about 3.0 x10 - 4. That is, B has a higher latch-up current than A. Thus, it can be seen that B has improved latch-up characteristics.

6 is a graph comparing breakdown voltage characteristics of the lateral insulated gate bipolar transistors illustrated in FIGS. 1, 2, and 3.

Referring to FIG. 6, (A) is a lateral insulated gate bipolar transistor 100 having one emitter electrode shown in FIG. 1, and (B) is two emitter electrodes and a trench insulating film shown in FIG. 3. Is a lateral insulated gate bipolar transistor 300 having a lateral insulated gate bipolar transistor 200 having two emitter electrodes shown in FIG. 2.

Since the first drift length L1 (see FIG. 1) of A is longer than the second drift length L2 (see FIG. 2) of C, it can be confirmed that the breakdown voltage of A is larger than C. The second drift length L2 (see FIG. 2) of C is the same as the third drift length L3 (see FIG. 3) of B, but a trench insulating film 311 (see FIG. 3) is formed in B so that B is greater than It can be seen that it has a larger breakdown voltage.

The present invention is not limited by the above-described embodiment and the accompanying drawings, but is intended to be limited by the appended claims. Accordingly, various forms of substitution, modification, and alteration may be made by those skilled in the art without departing from the technical spirit of the present invention described in the claims, which are also within the scope of the present invention. something to do.

101: semiconductor substrate of first conductivity type
111: Well region of the first conductivity type
115: collector electrode
121: gate electrode
137: first emitter electrode
241: second emitter electrode
243: second base region
311: transistor insulating film

Claims (10)

A semiconductor substrate of a first conductivity type;
A second conductivity type drift region formed on the first conductivity type semiconductor substrate;
A gate electrode disposed on the first conductive semiconductor substrate;
A first emitter electrode spaced apart from the gate electrode and disposed on the first conductive semiconductor substrate so as to be adjacent to one side of the gate electrode;
A collector electrode spaced apart from the gate electrode and disposed on the semiconductor substrate of the first conductivity type to be adjacent to the other side of the gate electrode;
A second emitter electrode disposed between the gate electrode and the collector electrode; And
A trench insulating film formed between the second emitter electrode and the collector electrode in the drift region of the second conductivity type;
The second emitter electrode is spaced apart from the first emitter electrode is used as a power switching element,
A voltage is applied to the first emitter electrode and the second emitter electrode, respectively, to operate a first PNPN thyristor at the first emitter electrode and the collector electrode, and at the second emitter electrode and the collector electrode. Horizontally Isolated Gate Bipolar Transistor with 2 PNPN Thyristors
The method of claim 1,
And an upper surface of the trench insulating layer is exposed to an upper surface of the first conductive semiconductor substrate.
The method of claim 1,
And a width of an upper surface of the trench insulating layer is wider than a width of a lower surface of the trench insulating layer.
The method of claim 1,
The trench insulating film is:
Upper region; And
And a lower region having a width narrower than that of the upper region.
The method of claim 1,
And a base region provided adjacent to the second emitter electrode in the drift region of the second conductivity type.
The method of claim 5,
And a side surface of the upper portion of the trench insulating layer is in contact with the base region.
The method of claim 6,
And a second conductivity type well region provided in the drift region of the second conductivity type adjacent to the collector electrode.
The method of claim 7, wherein
And the other side surface of the upper portion of the trench insulating layer is in contact with the well region of the second conductivity type.
The method of claim 8,
And a maximum depth of the trench insulating layer is shallower than or equal to that of the base region and the well region of the second conductivity type.
The method of claim 1,
The trench insulating layer may include silicon oxide.
KR1020120130550A 2012-11-16 2012-11-16 A insulated gate bipolar transistor KR102013226B1 (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012009799A (en) * 2010-05-26 2012-01-12 Denso Corp Lateral insulated gate bipolar transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080068658A (en) * 2008-04-17 2008-07-23 후지 덴키 홀딩스 가부시끼가이샤 Soi trench lateral igbt

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012009799A (en) * 2010-05-26 2012-01-12 Denso Corp Lateral insulated gate bipolar transistor

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