KR20160092466A - Liquid crystal display and manufacturing method thereof - Google Patents

Liquid crystal display and manufacturing method thereof Download PDF

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Publication number
KR20160092466A
KR20160092466A KR1020150080379A KR20150080379A KR20160092466A KR 20160092466 A KR20160092466 A KR 20160092466A KR 1020150080379 A KR1020150080379 A KR 1020150080379A KR 20150080379 A KR20150080379 A KR 20150080379A KR 20160092466 A KR20160092466 A KR 20160092466A
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KR
South Korea
Prior art keywords
electrode
gate
layer
pixel
pixel electrode
Prior art date
Application number
KR1020150080379A
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Korean (ko)
Inventor
이금희
최영주
Original Assignee
삼성디스플레이 주식회사
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Priority to US14/805,237 priority Critical patent/US20160216584A1/en
Publication of KR20160092466A publication Critical patent/KR20160092466A/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F2001/136295—

Abstract

According to the liquid crystal display device and the manufacturing method thereof according to the embodiment of the present invention, a planar common electrode is formed directly on the common voltage line, a semiconductor layer is formed on the common electrode and the gate line, and is used as a gate insulating film. Therefore, by forming the common electrode and the pixel electrode on one substrate and forming the common electrode directly on the common voltage line, the signal delay of the common voltage can be prevented, and an increase in manufacturing cost can be prevented.

Description

TECHNICAL FIELD [0001] The present invention relates to a liquid crystal display (LCD)

The present invention relates to a liquid crystal display device and a manufacturing method thereof.

BACKGROUND ART [0002] A liquid crystal display (LCD) is one of the most widely used flat panel displays. The liquid crystal display displays liquid crystal molecules in a liquid crystal layer by applying voltage to electrodes, Device.

The liquid crystal display device has the advantage of being easy to be thinned, but has a disadvantage that the side visibility is lower than that of the front view, and various arrangements of the liquid crystal array and the driving method for overcoming this are being developed. As a method for realizing such a wide viewing angle, a liquid crystal display device in which a pixel electrode and a common electrode are formed on one substrate has attracted attention. In this type of liquid crystal display device, a common voltage line for transmitting a common voltage is formed to prevent signal delay of the common voltage applied to the common electrode.

However, in order to form a common voltage line, a pixel electrode, and a common electrode on one substrate and to form another region including electrodes such as a direct connection portion of a pixel, different photomasks are required, which increases manufacturing cost.

SUMMARY OF THE INVENTION The present invention provides a liquid crystal display device and a manufacturing method thereof that can prevent an increase in manufacturing cost by forming two electric field generating electrodes and forming direct connection portions of pixels without adding a photomask process .

A liquid crystal display according to an embodiment of the present invention includes a substrate, gate lines and pixel electrodes formed on the substrate, a semiconductor layer formed on the gate lines, a data line formed on the semiconductor layer, And a drain electrode, wherein the drain electrode is formed so as to overlap with a portion of the pixel electrode, and a portion of the pixel electrode is formed of a first electrode made of poly indium tungsten oxide (poly-ITO) And a second layer formed of a metal and a portion of the pixel electrode excluding the portion includes the first layer and does not include the second layer.

A gate electrode formed of the same material as the gate line, a gate insulating film formed on a part of the gate electrode, and a direct connection portion including a contact electrode formed on the gate electrode and the gate insulating film .

The contact electrode may contact a portion of the gate electrode to transfer a gate signal from the driver to the gate electrode.

The gate line and the gate electrode may include a first layer formed of amorphous indium tungsten oxide (a-ITO) and a second layer formed of a metal.

A protective layer formed on the source electrode, the drain electrode, and the pixel region; and a common electrode formed on the protective layer.

The common electrode may include a plurality of branched electrodes.

A method of manufacturing a liquid crystal display device according to an embodiment of the present invention includes forming a gate line and a first pixel electrode on a substrate, forming a gate insulating film on the gate line, And forming a data line, a source electrode, and a drain electrode on the gate insulating layer, wherein the drain electrode overlaps with a portion of the second pixel electrode, The first layer is made of amorphous indium tungsten oxide (a-ITO) and the first layer is made of poly-indium tin oxide (poly-ITO).

Wherein the step of changing includes the steps of laminating the gate insulating film on the gate line and the first pixel electrode through a high temperature deposition method and etching the gate insulating film stacked on the first pixel, The first layer of the electrode may be changed to the first layer of the second pixel electrode when the gate insulating film is laminated.

Wherein the step of forming the drain electrode includes the steps of laminating an electrode layer on the gate insulating film and the second pixel electrode and patterning the electrode layer, And etching the remaining portions except for the step of etching.

The portion of the second pixel electrode may include a second layer formed of a metal.

Forming a passivation layer on the source electrode, the drain electrode, and the pixel region; and forming a common electrode on the passivation layer.

The forming of the common electrode may include forming the plurality of branched electrodes.

According to the embodiments of the present invention, it is possible to prevent the increase of the manufacturing cost by forming the thin film transistor and the pixel region together with the direct connection portion to reduce the number of mask processes and connecting the drain electrode with the pixel electrode. The reliability of the connection can be guaranteed.

1 is a layout diagram of a liquid crystal display device according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view of the liquid crystal display device of FIG. 1 taken along line II-II.
FIG. 3 is a cross-sectional view of the liquid crystal display device of FIG. 1 taken along line III-III.
FIGS. 4, 7, 10, and 13 are layout views sequentially illustrating a method of manufacturing a liquid crystal display device according to an embodiment of the present invention.
5, 8, 11, and 14 are sectional views sequentially illustrating a method of manufacturing a liquid crystal display device according to an embodiment of the present invention, and are cross-sectional views taken along line II-II in FIG.
Figs. 6, 9, 12 and 15 are sectional views sequentially showing the method of manufacturing the liquid crystal display device according to the embodiment of the present invention, and are cross-sectional views taken along line III-III in Fig.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

In the drawings, the thickness is enlarged to clearly represent the layers and regions. Like parts are designated with like reference numerals throughout the specification. Whenever a portion of a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the case where it is "directly on" another portion, but also the case where there is another portion in between. Conversely, when a part is "directly over" another part, it means that there is no other part in the middle.

Hereinafter, a liquid crystal display device according to an embodiment of the present invention will be described with reference to FIGS. 1 to 3. FIG. FIG. 1 is a layout diagram of a liquid crystal display device according to an embodiment of the present invention. FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1, -III line in Fig.

A liquid crystal display according to an embodiment of the present invention includes a first display panel and a second display panel facing each other, and a liquid crystal layer injected between the first display panel and the second display panel.

First, the first display panel will be described with reference to Figs.

A plurality of gate lines 121 and a common voltage line 131 are formed on the first substrate 110.

Each gate line 121 includes a plurality of gate electrodes 124. The gate electrode 124 may be formed of two layers. In an embodiment of the present invention, the gate electrode 124 may include a transparent electrode layer 124p such as amorphous indium tungsten oxide (a-ITO) And a metal layer 124q made of copper (Cu) or the like. A pixel electrode 191 is formed on the same layer as the gate electrode 124 in the pixel region. At this time, the pixel electrode 191p is made of a transparent electrode material such as poly ITO. The first pixel electrode 191p is formed of a transparent electrode material such as amorphous ITO and then converted into poly ITO due to a high temperature process. A gate electrode 125 of the direct connection portion is formed in the same layer as the gate electrode 124 in the direct connection portion. The gate electrode 125 of the direct connection portion may include a transparent electrode layer 125p such as a-ITO and a metal layer 125q made of copper or the like as the plurality of gate electrodes 124. [

A gate insulating layer 140 is formed on the gate electrode 124 and the gate electrode 125 of the direct connection portion.

A semiconductor layer 154 is formed on the gate insulating layer 140.

On the semiconductor layer 154, resistive contact members 163 and 165 are formed. On the resistive contact members 163 and 165, a data line 171, a source electrode 173, a drain electrode 175 is formed.

The data line 171 transmits a data signal and extends mainly in the vertical direction and crosses the gate line 121.

The source electrode 173 is part of the data line 171 and is arranged on the same line as the data line 171. The drain electrode 175 is formed so as to extend in parallel with the source electrode 173. Therefore, the drain electrode 175 is in parallel with a part of the data line 171. [

A passivation layer 180 is formed on the semiconductor layer 154, the data line 171, the source electrode 173, the drain electrode 175, and the pixel electrode 191.

A common voltage line 131 and a common electrode 270 are formed on the passivation layer 180. The common voltage line 131 is connected across a plurality of pixel regions to apply a common voltage to a plurality of common electrodes 270 located in a plurality of pixels. The common electrode 270 includes a plurality of branched electrodes, and the pixel electrode is formed in a planar shape. The planar pixel electrode 191 overlaps the plurality of branch electrodes of the common electrode 270 with the protective film 180 interposed therebetween.

The pixel electrode 191 to which the data voltage is applied generates an electric field in the liquid crystal layer together with the common electrode 270 to which the common voltage is applied to thereby determine the direction of the liquid crystal molecules in the liquid crystal layer and display the corresponding image.

A first alignment layer is applied to the inner surface of the first display panel.

Next, the second display panel will be described. The second display panel includes a second substrate. A second alignment film is coated on the inner surface of the second substrate.

The first alignment film and the second alignment film may be horizontal alignment films.

The liquid crystal layer between the first display panel and the second display panel includes a plurality of liquid crystal molecules and the liquid crystal molecules may be oriented such that their long axes are horizontal with respect to the surface of the two display panels in the absence of an electric field.

The display panel may further include a backlight unit (not shown) outside the substrate 110 of the first display panel to generate light to provide light to the two display panels.

Hereinafter, a manufacturing method of a liquid crystal display device according to an embodiment of the present invention will be described with reference to FIGS. 4 to 15 together with FIGS. 1 to 3. FIG. FIGS. 4, 7, 10, and 13 are layout views sequentially illustrating a method of manufacturing a liquid crystal display device according to an embodiment of the present invention. 5, 8, 11, and 14 are sectional views sequentially illustrating a method of manufacturing a liquid crystal display device according to an embodiment of the present invention, and are cross-sectional views taken along line II-II in FIG. Figs. 6, 9, 12 and 15 are sectional views sequentially showing the method of manufacturing the liquid crystal display device according to the embodiment of the present invention, and are cross-sectional views taken along line III-III in Fig.

4 to 6, a gate line 121, a gate electrode 124, a pixel electrode 191, and a gate electrode 125 of a direct connection portion are formed on a first substrate 110, . The gate line 121, the gate electrode 124, the pixel electrode 191, and the gate electrode 125 are simultaneously formed of the same material and can be etched using the first mask. The first mask may be a kind of full-tone mask. In an embodiment of the present invention, the gate line 121, the gate electrode 124, the pixel electrode 191, and the gate electrode 125 of the direct connection portion may be formed of two layers. The first layers 124p, 125p and 191p may be formed of a transparent electrode material such as a-ITO and the second layers 124q, 125q and 191q located above the first layers 124p, 125p and 191p And may be formed of a metal material such as copper.

7 to 9, a gate insulating film 140, a semiconductor layer 154, and resistive contact members 163 and 165 are formed. A portion of the gate insulating film 140, the semiconductor layer 154, and the resistive contact members 163 and 165 is patterned using a second mask. The second mask may be a kind of half-tone mask. A photoresist (not shown) formed using a second mask in a photolithography process is formed by depositing a relatively thick portion disposed over the resistive contact members 163 and 165, a relatively thin portion disposed over the semiconductor layer 154, And an opening disposed over the pixel electrode 191 and the gate electrode 125. [ In one embodiment of the present invention, a high-temperature process such as chemical vapor deposition (CVD) is used in forming the gate insulating layer 140, so that a-ITO constituting the first layer 124p, 125p, Can be changed to poly ITO. Thereafter, the poly-ITO is left unremoved by the etchant at the time of patterning the source electrode 173 and the drain electrode 175.

10 to 12, the data line 171, the source electrode 173, and the drain electrode 175 are formed using a third mask. Where the third mask may be one kind of full-tone mask. At this time, according to one embodiment of the present invention, the drain electrode 175 extends to cover a part of the second layer 191q of the pixel electrode 191. A portion of the second layer 191q of the pixel electrode 191 which is not covered with the drain electrode 175 is removed at the time of patterning and only the first layer 191p changed to poly ITO remains to serve as a pixel electrode . According to the present invention, the problem associated with the protrusion of the semiconductor layer 154 is solved. If a protrusion is present in the semiconductor layer 154, a photocurrent generated by the light of the backlight is generated. In the present invention, since the semiconductor layer 154 is etched using the second mask and then the source and drain electrodes 173 and 175 are etched independently using the third mask, Is not present. In addition, the critical dimension (CD) problem of the source and drain electrodes 173 and 175 is also solved.

The contact electrode 178 of the direct connection portion is also formed together with the data line 171, the source electrode 173, and the drain electrode 175. A part of the contact electrode 178 is contacted with a part of the gate electrode 125 since a part of the gate insulating film 140 located on the gate electrode 125 of the direct connection part is removed when the gate insulating film 140 is formed, The gate electrode 178 can transfer the gate signal from the driver to the gate electrode.

Next, as shown in Figs. 13 to 15, a protective film 180 is formed on the semiconductor layer 154, the data line 171, the source electrode 173, the drain electrode 175, and the pixel electrode 191 do. The protective film 180 is etched using the fourth mask to open the pad portion. The fourth mask may be one kind of full-tone mask.

Next, as shown in Figs. 1 to 3, the common voltage line 131 and the common electrode 270 are formed using a fifth mask. The fifth mask may be one kind of full-tone mask. The common electrode 270 may be formed on the upper portion of the pixel electrode 191 and the common electrode 270 may include a plurality of branches extending in the longitudinal direction.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, Of the right.

110: first substrate
121: gate line
131: common voltage line
154: semiconductor layer
171: Data line
173: source electrode
175: drain electrode
180: Shield
191:
270: common electrode

Claims (12)

Board,
A gate line and a pixel electrode formed on the substrate,
A semiconductor layer formed on the gate line, and
A data line, a source electrode, and a drain electrode
/ RTI >
The drain electrode is formed so as to overlap a portion of the pixel electrode, and a part of the pixel electrode is formed of a first layer formed of poly indium tungsten oxide (poly-ITO) Wherein a portion of the pixel electrode excluding the portion includes the first layer and does not include the second layer.
The method of claim 1,
A gate electrode formed of the same material as the gate line,
A gate insulating film formed on a part of the gate electrode, and
The gate electrode and the gate electrode formed on the gate insulating film,
And a direct connection portion including the first electrode and the second electrode.
3. The method of claim 2,
And the contact electrode contacts a portion of the gate electrode to transfer a gate signal from the driver to the gate electrode.
3. The method of claim 2,
Wherein the gate line and the gate electrode comprise a first layer formed of amorphous indium tungsten oxide (a-ITO) and a second layer formed of a metal.
The method of claim 1,
A protective film formed on the source electrode, the drain electrode, and the pixel region, and
The common electrode
And the liquid crystal display device.
The method of claim 5,
Wherein the common electrode includes a plurality of branched electrodes.
Forming a gate line and a first pixel electrode on a substrate,
Forming a gate insulating film on the gate line, changing the first pixel electrode to a second pixel electrode, and
Forming a data line, a source electrode, and a drain electrode on the gate insulating film
Lt; / RTI >
Wherein the drain electrode overlaps with a portion of the second pixel electrode,
Wherein the first layer of the first pixel electrode is made of amorphous indium tungsten oxide (a-ITO) and the first layer of the second pixel electrode is made of poly indium tungsten oxide (poly-ITO) A method of manufacturing a liquid crystal display device.
8. The method of claim 7,
Wherein the changing comprises:
Depositing the gate insulating film on the gate line and the first pixel electrode through a high-temperature deposition method, and
Etching the gate insulating film stacked on the first pixel
Lt; / RTI >
Wherein the first layer of the first pixel electrode is changed to the first layer of the second pixel electrode when the gate insulating layer is stacked.
9. The method of claim 8,
Wherein forming the drain electrode comprises:
Laminating an electrode layer on the gate insulating layer and the second pixel electrode, and
Patterning the electrode layer,
Lt; / RTI >
The patterning may include etching the remaining portion of the second pixel electrode excluding the portion
And the second electrode is electrically connected to the second electrode.
The method of claim 9,
Wherein a portion of the second pixel electrode comprises a liquid crystal display including a second layer formed of a metal
8. The method of claim 7,
Forming a protective film on the source electrode, the drain electrode, and the pixel region, and
Forming a common electrode on the protective film
The method comprising the steps of:
12. The method of claim 11,
Wherein forming the common electrode comprises:
Forming the plurality of branch electrodes
And the second electrode is electrically connected to the second electrode.
KR1020150080379A 2015-01-26 2015-06-08 Liquid crystal display and manufacturing method thereof KR20160092466A (en)

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KR1020150012142 2015-01-26

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108828859A (en) * 2018-05-31 2018-11-16 昆山龙腾光电有限公司 Array substrate and preparation method thereof and display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108828859A (en) * 2018-05-31 2018-11-16 昆山龙腾光电有限公司 Array substrate and preparation method thereof and display device

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