KR20160052769A - 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출 - Google Patents

다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출 Download PDF

Info

Publication number
KR20160052769A
KR20160052769A KR1020167010766A KR20167010766A KR20160052769A KR 20160052769 A KR20160052769 A KR 20160052769A KR 1020167010766 A KR1020167010766 A KR 1020167010766A KR 20167010766 A KR20167010766 A KR 20167010766A KR 20160052769 A KR20160052769 A KR 20160052769A
Authority
KR
South Korea
Prior art keywords
spectra
polishing
end point
substrate
chemical mechanical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020167010766A
Other languages
English (en)
Korean (ko)
Inventor
준 킨
시바쿠말 단다파니
해리 큐. 리
토마스 에이치. 오스터헬드
자이즈 츄
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20160052769A publication Critical patent/KR20160052769A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020167010766A 2008-05-02 2009-04-29 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출 Ceased KR20160052769A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US4996508P 2008-05-02 2008-05-02
US61/049,965 2008-05-02
PCT/US2009/042085 WO2009134865A2 (en) 2008-05-02 2009-04-29 Endpoint detection in chemical mechanical polishing using multiple spectra

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020107027159A Division KR101619374B1 (ko) 2008-05-02 2009-04-29 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출

Publications (1)

Publication Number Publication Date
KR20160052769A true KR20160052769A (ko) 2016-05-12

Family

ID=41255749

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020107027159A Active KR101619374B1 (ko) 2008-05-02 2009-04-29 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출
KR1020167010766A Ceased KR20160052769A (ko) 2008-05-02 2009-04-29 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1020107027159A Active KR101619374B1 (ko) 2008-05-02 2009-04-29 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출

Country Status (5)

Country Link
US (1) US20090275265A1 (enExample)
JP (1) JP5542802B2 (enExample)
KR (2) KR101619374B1 (enExample)
CN (2) CN103537975A (enExample)
WO (1) WO2009134865A2 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8260446B2 (en) 2005-08-22 2012-09-04 Applied Materials, Inc. Spectrographic monitoring of a substrate during processing using index values
US8392012B2 (en) * 2008-10-27 2013-03-05 Applied Materials, Inc. Multiple libraries for spectrographic monitoring of zones of a substrate during processing
US20100103422A1 (en) * 2008-10-27 2010-04-29 Applied Materials, Inc. Goodness of fit in spectrographic monitoring of a substrate during processing
TWI496661B (zh) * 2010-04-28 2015-08-21 Applied Materials Inc 用於光學監測之參考光譜的自動產生
US9579767B2 (en) 2010-04-28 2017-02-28 Applied Materials, Inc. Automatic generation of reference spectra for optical monitoring of substrates
WO2011139571A2 (en) * 2010-05-05 2011-11-10 Applied Materials, Inc. Dynamically or adaptively tracking spectrum features for endpoint detection
US8666665B2 (en) 2010-06-07 2014-03-04 Applied Materials, Inc. Automatic initiation of reference spectra library generation for optical monitoring
US8954186B2 (en) 2010-07-30 2015-02-10 Applied Materials, Inc. Selecting reference libraries for monitoring of multiple zones on a substrate
US20120034844A1 (en) * 2010-08-05 2012-02-09 Applied Materials, Inc. Spectrographic monitoring using index tracking after detection of layer clearing
TW201223702A (en) * 2010-08-06 2012-06-16 Applied Materials Inc Techniques for matching measured spectra to reference spectra for in-situ optical monitoring
US8535115B2 (en) * 2011-01-28 2013-09-17 Applied Materials, Inc. Gathering spectra from multiple optical heads
US8547538B2 (en) * 2011-04-21 2013-10-01 Applied Materials, Inc. Construction of reference spectra with variations in environmental effects
US8755928B2 (en) 2011-04-27 2014-06-17 Applied Materials, Inc. Automatic selection of reference spectra library
KR101981814B1 (ko) * 2011-04-28 2019-05-23 어플라이드 머티어리얼스, 인코포레이티드 연마를 위한 모델 기반 스펙트럼 라이브러리의 생성
US20140024293A1 (en) * 2012-07-19 2014-01-23 Jimin Zhang Control Of Overpolishing Of Multiple Substrates On the Same Platen In Chemical Mechanical Polishing
US8808059B1 (en) 2013-02-27 2014-08-19 Applied Materials, Inc. Spectraphic monitoring based on pre-screening of theoretical library
CN103887206B (zh) * 2014-04-02 2017-05-31 中国电子科技集团公司第四十五研究所 化学机械平坦化终点检测方法及装置
US20160033958A1 (en) * 2014-08-01 2016-02-04 Globalfoundries Inc. Endpoint determination using individually measured target spectra
JP6399873B2 (ja) * 2014-09-17 2018-10-03 株式会社荏原製作所 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法
CN105057712B (zh) * 2015-08-24 2019-04-23 佛山新成洪鼎机械技术有限公司 轴自动定位深孔盲孔加工机床
TWI779986B (zh) * 2016-11-30 2022-10-01 美商應用材料股份有限公司 使用神經網路的光譜監測
US11507824B2 (en) 2018-06-28 2022-11-22 Applied Materials, Inc. Training spectrum generation for machine learning system for spectrographic monitoring

Family Cites Families (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5747380A (en) * 1996-02-26 1998-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Robust end-point detection for contact and via etching
US5770948A (en) * 1996-03-19 1998-06-23 International Business Machines Corporation Rotary signal coupling for chemical mechanical polishing endpoint detection with a strasbaugh tool
US6489624B1 (en) * 1997-07-18 2002-12-03 Nikon Corporation Apparatus and methods for detecting thickness of a patterned layer
JP4460659B2 (ja) * 1997-10-22 2010-05-12 株式会社ルネサステクノロジ 薄膜の膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその製造装置
TW374050B (en) * 1997-10-31 1999-11-11 Applied Materials Inc Method and apparatus for modeling substrate reflectivity during chemical mechanical polishing
JPH11325840A (ja) * 1998-05-19 1999-11-26 Dainippon Screen Mfg Co Ltd メタル残膜判定方法およびメタル残膜判定装置
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
US6106662A (en) 1998-06-08 2000-08-22 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6361646B1 (en) * 1998-06-08 2002-03-26 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
TW398036B (en) * 1998-08-18 2000-07-11 Promos Technologies Inc Method of monitoring of chemical mechanical polishing end point and uniformity
IL125964A (en) * 1998-08-27 2003-10-31 Tevet Process Control Technolo Method and apparatus for measuring the thickness of a transparent film, particularly of a photoresist film on a semiconductor substrate
US6159073A (en) * 1998-11-02 2000-12-12 Applied Materials, Inc. Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing
WO2000026613A1 (en) * 1998-11-02 2000-05-11 Applied Materials, Inc. Optical monitoring of radial ranges in chemical mechanical polishing a metal layer on a substrate
US6908374B2 (en) * 1998-12-01 2005-06-21 Nutool, Inc. Chemical mechanical polishing endpoint detection
US6184985B1 (en) * 1998-12-11 2001-02-06 Filmetrics, Inc. Spectrometer configured to provide simultaneous multiple intensity spectra from independent light sources
US6204922B1 (en) * 1998-12-11 2001-03-20 Filmetrics, Inc. Rapid and accurate thin film measurement of individual layers in a multi-layered or patterned sample
US6172756B1 (en) * 1998-12-11 2001-01-09 Filmetrics, Inc. Rapid and accurate end point detection in a noisy environment
US6190234B1 (en) * 1999-01-25 2001-02-20 Applied Materials, Inc. Endpoint detection with light beams of different wavelengths
US6334807B1 (en) * 1999-04-30 2002-01-01 International Business Machines Corporation Chemical mechanical polishing in-situ end point system
JP3327289B2 (ja) * 2000-03-29 2002-09-24 株式会社ニコン 工程終了点測定装置及び測定方法及び研磨装置及び半導体デバイス製造方法及び信号処理プログラムを記録した記録媒体
WO2000071971A1 (en) * 1999-05-24 2000-11-30 Luxtron Corporation Optical techniques for measuring layer thicknesses
US6358327B1 (en) * 1999-06-29 2002-03-19 Applied Materials, Inc. Method for endpoint detection using throttle valve position
US6340602B1 (en) * 1999-12-10 2002-01-22 Sensys Instruments Method of measuring meso-scale structures on wafers
JP3259225B2 (ja) * 1999-12-27 2002-02-25 株式会社ニコン 研磨状況モニタ方法及びその装置、研磨装置、プロセスウエハ、半導体デバイス製造方法、並びに半導体デバイス
JP3506114B2 (ja) * 2000-01-25 2004-03-15 株式会社ニコン モニタ装置及びこのモニタ装置を具えた研磨装置及び研磨方法
AU2001279126A1 (en) * 2000-07-31 2002-02-13 Silicon Valley Group Inc In-situ method and apparatus for end point detection in chemical mechanical polishing
AU2001279247A1 (en) * 2000-08-10 2002-02-25 Sensys Instruments Corporation Database interpolation method for optical measurement of diffractive microstructures
US6511363B2 (en) * 2000-12-27 2003-01-28 Tokyo Seimitsu Co., Ltd. Polishing end point detecting device for wafer polishing apparatus
WO2002065545A2 (en) * 2001-02-12 2002-08-22 Sensys Instruments Corporation Overlay alignment metrology using diffraction gratings
JP3946470B2 (ja) * 2001-03-12 2007-07-18 株式会社デンソー 半導体層の膜厚測定方法及び半導体基板の製造方法
US6812478B2 (en) * 2001-03-19 2004-11-02 Lam Research Corporation In-situ detection of thin-metal interface using optical interference via a dynamically updated reference
US6676482B2 (en) * 2001-04-20 2004-01-13 Speedfam-Ipec Corporation Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling
US6966816B2 (en) * 2001-05-02 2005-11-22 Applied Materials, Inc. Integrated endpoint detection system with optical and eddy current monitoring
US6762838B2 (en) * 2001-07-02 2004-07-13 Tevet Process Control Technologies Ltd. Method and apparatus for production line screening
JP3932836B2 (ja) * 2001-07-27 2007-06-20 株式会社日立製作所 薄膜の膜厚計測方法及びその装置並びにそれを用いたデバイスの製造方法
US6618130B2 (en) * 2001-08-28 2003-09-09 Speedfam-Ipec Corporation Method and apparatus for optical endpoint detection during chemical mechanical polishing
US6678046B2 (en) * 2001-08-28 2004-01-13 Therma-Wave, Inc. Detector configurations for optical metrology
US6898596B2 (en) * 2001-10-23 2005-05-24 Therma-Wave, Inc. Evolution of library data sets
US6678055B2 (en) * 2001-11-26 2004-01-13 Tevet Process Control Technologies Ltd. Method and apparatus for measuring stress in semiconductor wafers
US6939198B1 (en) * 2001-12-28 2005-09-06 Applied Materials, Inc. Polishing system with in-line and in-situ metrology
US6942546B2 (en) * 2002-01-17 2005-09-13 Asm Nutool, Inc. Endpoint detection for non-transparent polishing member
US6813034B2 (en) * 2002-02-05 2004-11-02 Therma-Wave, Inc. Analysis of isolated and aperiodic structures with simultaneous multiple angle of incidence measurements
US6609086B1 (en) * 2002-02-12 2003-08-19 Timbre Technologies, Inc. Profile refinement for integrated circuit metrology
US6806948B2 (en) * 2002-03-29 2004-10-19 Lam Research Corporation System and method of broad band optical end point detection for film change indication
US20040007325A1 (en) * 2002-06-11 2004-01-15 Applied Materials, Inc. Integrated equipment set for forming a low K dielectric interconnect on a substrate
US6947135B2 (en) * 2002-07-01 2005-09-20 Therma-Wave, Inc. Reduced multicubic database interpolation method for optical measurement of diffractive microstructures
US20040018647A1 (en) * 2002-07-02 2004-01-29 Applied Materials, Inc. Method for controlling the extent of notch or undercut in an etched profile using optical reflectometry
US20050061674A1 (en) * 2002-09-16 2005-03-24 Yan Wang Endpoint compensation in electroprocessing
JP4542324B2 (ja) * 2002-10-17 2010-09-15 株式会社荏原製作所 研磨状態監視装置及びポリッシング装置
US6885467B2 (en) * 2002-10-28 2005-04-26 Tevet Process Control Technologies Ltd. Method and apparatus for thickness decomposition of complicated layer structures
US7265382B2 (en) * 2002-11-12 2007-09-04 Applied Materials, Inc. Method and apparatus employing integrated metrology for improved dielectric etch efficiency
CN100349267C (zh) * 2002-11-27 2007-11-14 东洋橡胶工业株式会社 研磨垫及半导体器件的制造方法
IL153894A (en) * 2003-01-12 2010-05-31 Nova Measuring Instr Ltd Method and system for measuring the thickness of thin conductive layers
US7049156B2 (en) * 2003-03-19 2006-05-23 Verity Instruments, Inc. System and method for in-situ monitor and control of film thickness and trench depth
JP2004363201A (ja) * 2003-06-03 2004-12-24 Matsushita Electric Ind Co Ltd ウェハの研磨方法および研磨装置
US7008296B2 (en) * 2003-06-18 2006-03-07 Applied Materials, Inc. Data processing for monitoring chemical mechanical polishing
US20050026542A1 (en) * 2003-07-31 2005-02-03 Tezer Battal Detection system for chemical-mechanical planarization tool
US7097537B1 (en) * 2003-08-18 2006-08-29 Applied Materials, Inc. Determination of position of sensor measurements during polishing
JP4464642B2 (ja) * 2003-09-10 2010-05-19 株式会社荏原製作所 研磨状態監視装置、研磨状態監視方法、研磨装置及び研磨方法
CN1910011B (zh) * 2004-01-26 2010-12-15 Tbw工业有限公司 使用原位修整制程的化学机械平面化制程控制
US7255771B2 (en) * 2004-03-26 2007-08-14 Applied Materials, Inc. Multiple zone carrier head with flexible membrane
JP5017765B2 (ja) * 2004-03-30 2012-09-05 日本電気株式会社 光変調器とその製造方法並びに変調光学系とこれを用いた光インターコネクト装置並びに光通信装置
US7120553B2 (en) * 2004-07-22 2006-10-10 Applied Materials, Inc. Iso-reflectance wavelengths
US7393459B2 (en) * 2004-08-06 2008-07-01 Applied Materials, Inc. Method for automatic determination of substrates states in plasma processing chambers
US7406394B2 (en) * 2005-08-22 2008-07-29 Applied Materials, Inc. Spectra based endpointing for chemical mechanical polishing
JP5534672B2 (ja) * 2005-08-22 2014-07-02 アプライド マテリアルズ インコーポレイテッド 化学機械的研磨のスペクトルに基づく監視のための装置および方法
US7409260B2 (en) * 2005-08-22 2008-08-05 Applied Materials, Inc. Substrate thickness measuring during polishing
US7764377B2 (en) * 2005-08-22 2010-07-27 Applied Materials, Inc. Spectrum based endpointing for chemical mechanical polishing
US20070077671A1 (en) * 2005-10-03 2007-04-05 Applied Materials In-situ substrate imaging
US7277819B2 (en) * 2005-10-31 2007-10-02 Eastman Kodak Company Measuring layer thickness or composition changes
KR101381341B1 (ko) * 2006-10-06 2014-04-04 가부시끼가이샤 도시바 가공 종점 검지방법, 연마방법 및 연마장치
US7998358B2 (en) * 2006-10-31 2011-08-16 Applied Materials, Inc. Peak-based endpointing for chemical mechanical polishing
US7612873B2 (en) * 2006-11-13 2009-11-03 Dainippon Screen Mfg. Co., Ltd. Surface form measuring apparatus and stress measuring apparatus and surface form measuring method and stress measuring method
US7444198B2 (en) * 2006-12-15 2008-10-28 Applied Materials, Inc. Determining physical property of substrate
KR101678082B1 (ko) * 2007-02-23 2016-11-21 어플라이드 머티어리얼스, 인코포레이티드 연마 엔드포인트들을 결정하기 위한 스펙트럼 사용
US7663766B2 (en) * 2007-09-05 2010-02-16 Advanced Micro Devices, Inc. Incorporating film optical property measurements into scatterometry metrology
US20100114532A1 (en) * 2008-11-03 2010-05-06 Applied Materials, Inc. Weighted spectrographic monitoring of a substrate during processing
CN101509741A (zh) 2009-03-19 2009-08-19 上海交通大学 换热器翅片以及翅片管式热交换器

Also Published As

Publication number Publication date
CN103537975A (zh) 2014-01-29
JP2011520264A (ja) 2011-07-14
WO2009134865A2 (en) 2009-11-05
JP5542802B2 (ja) 2014-07-09
KR101619374B1 (ko) 2016-05-10
CN102017094A (zh) 2011-04-13
US20090275265A1 (en) 2009-11-05
CN102017094B (zh) 2013-11-20
WO2009134865A3 (en) 2010-02-18
KR20110021842A (ko) 2011-03-04

Similar Documents

Publication Publication Date Title
KR101619374B1 (ko) 다중 스펙트럼들을 이용한 화학 기계적 연마에서의 종료점 검출
US8369978B2 (en) Adjusting polishing rates by using spectrographic monitoring of a substrate during processing
US8874250B2 (en) Spectrographic monitoring of a substrate during processing using index values
US10766119B2 (en) Spectra based endpointing for chemical mechanical polishing
US9142466B2 (en) Using spectra to determine polishing endpoints
US10589397B2 (en) Endpoint control of multiple substrate zones of varying thickness in chemical mechanical polishing
US8392012B2 (en) Multiple libraries for spectrographic monitoring of zones of a substrate during processing
US20100114532A1 (en) Weighted spectrographic monitoring of a substrate during processing
US20100103422A1 (en) Goodness of fit in spectrographic monitoring of a substrate during processing
US20100120330A1 (en) Endpoint control of multiple-wafer chemical mechanical polishing
US20110282477A1 (en) Endpoint control of multiple substrates with multiple zones on the same platen in chemical mechanical polishing
KR101616024B1 (ko) 프로세싱 동안에 기판의 분광 사진 모니터링에 있어서의 적합도

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20160422

Application number text: 1020107027159

Filing date: 20101202

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20160520

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20160713

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20161216

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20160713

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I