KR20160019285A - Solar cell module and manufacturing method thereof - Google Patents

Abstract

The present invention relates to a solar cell module and a method for manufacturing the same. According to an embodiment of the present invention, the solar cell module comprises: a solar cell including a semiconductor substrate and a plurality of first electrodes and a plurality of second electrodes which are formed to be spaced apart from each other on the rear surface of the semiconductor substrate; a plurality of first wires connected to the first electrodes provided on the rear surface of the semiconductor substrate via a conductive adhesive; and a plurality of second wires connected to the second electrodes provided on the rear surface of the semiconductor substrate via a conductive adhesive, wherein the conductive adhesive includes a metallic material having a melding point between 165-300°C. Moreover, according to an embodiment of the present invention, the method for manufacturing the solar cell module comprises the following steps of: arranging the semiconductor substrate including the first electrodes and the second electrodes on a curved structure with a curved surface formed thereon; bending the semiconductor substrate along a curved shape of the curved structure; placing the first wires and the second wires respectively over the first electrodes and the second electrodes, and connecting the first wires and the second wires respectively to the first electrodes and the second electrodes; and releasing the bending of the semiconductor substrate. Therefore, the structural stability of the solar cell module can be further increased.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a solar cell module,

The present invention relates to a solar cell module and a manufacturing method thereof.

A typical solar cell has a substrate made of different conductivity type semiconductors, such as p-type and n-type, an emitter, and an electrode connected to the substrate and the emitter, respectively. At this time, a p-n junction is formed at the interface between the substrate and the emitter.

The solar cell using the semiconductor substrate can be divided into various types such as a conventional type and a rear type depending on the structure.

In the conventional type, the emitter portion is located on the front surface of the substrate, the electrode connected to the emitter portion is disposed on the front surface of the substrate, the electrode connected to the substrate is positioned on the rear surface of the substrate, And all of the electrodes are located on the rear surface of the substrate.

Since the electrodes of the rear contact type solar cell are all formed on the rear surface of the substrate, the electrodes formed on the rear surface of the substrate are connected in series to the electrodes of the adjacent solar cells via the interconnector or another conductive metal to form the solar cell module .

The present invention provides a solar cell module and a manufacturing method thereof.

A solar cell module according to an example of the present invention includes: a solar cell having a semiconductor substrate and a plurality of first electrodes and a plurality of second electrodes formed on a rear surface of the semiconductor substrate, the solar cells being spaced apart from each other; A plurality of first wires connected to a plurality of first electrodes provided on a rear surface of a semiconductor substrate through a conductive adhesive; And a plurality of second wires connected to a plurality of second electrodes provided on a rear surface of the semiconductor substrate through a conductive adhesive, wherein the conductive adhesive includes a metal material having a melting point between 165 ° C and 300 ° C.

Here, the conductive adhesive may include at least one metal material selected from the group consisting of Sn, SnCuAg, SnCu, and SnPb.

Such a conductive adhesive is coated on the surface of each of the first and second wiring lines or the conductive adhesive is applied between the first wiring and the first electrode of each portion where the plurality of first wiring lines and the plurality of first electrodes cross each other Or between the second wiring and the second electrode of each portion where the plurality of second wires and the plurality of second electrodes intersect with each other.

Here, the conductive adhesive may be in the form of a solder paste containing a metal material or a metal material in a resin of at least one of epoxy or silicone.

The plurality of first and second electrodes may be formed long in the first direction on the rear surface of the solar cell, and each of the plurality of first and second wirings may include a plurality of first and second electrodes in a second direction crossing the first direction. Can be connected to the electrode.

The width of the plurality of first and second wirings may be between 0.15 mm and 3 mm.

According to another aspect of the present invention, there is provided a method of manufacturing a solar cell module, comprising: disposing a semiconductor substrate having a plurality of first and second electrodes on a curved surface structure having a curved surface; Bending a semiconductor substrate along a curved shape of the curved structure; Disposing a plurality of first wires and a plurality of second wires on the plurality of first and second electrodes and connecting each of the plurality of first and second wires to the plurality of first and second electrodes in a heat treatment step; And releasing the banding of the semiconductor substrate.

In the step of arranging the semiconductor substrate here on the curved structure, the semiconductor substrate may be arranged so that the first and second electrodes are directed in the opposite direction to the surface of the curved structure.

Here, the curved surface structure may be formed in a curved surface along a second direction that is not curved in the first direction but is flat and crosses the first direction.

Specifically, the cross-section in the second direction in the curved structure may have a curved surface in which the middle portion is convex than the edge portion. In addition, a vacuum suction port may be formed on the curved surface of the curved structure.

Further, in the step of bending the semiconductor substrate, the semiconductor substrate may be adsorbed to the vacuum suction port and bent.

In the step of bending the semiconductor substrate, the semiconductor substrate may be bent so that both ends of the semiconductor substrate are different in height from the center of the semiconductor substrate by 1 mm to 30 mm in the front direction of the semiconductor substrate.

Further, in the step of arranging and connecting the plurality of first and second wirings, the plurality of first and second wirings are arranged long in the second direction equal to the direction in which the curved surface is formed in the curved structure, and the first and second wirings are bent .

In the step of disposing and connecting the plurality of first and second wirings, the heat treatment process may be performed in a state in which the first and second wirings are bent.

In addition, in the step of disposing and connecting the plurality of first and second wirings, the temperature of the heat treatment step may be between 165 캜 and 300 캜.

Further, the unbending step can be performed by releasing the vacuum of the vacuum suction port formed on the surface of the curved structure.

Then, the semiconductor substrate can be restored to its pre-bending state by the unbending step.

Such a debandling step may be performed before the conductive adhesive is cured by the heat treatment process in the connection step.

For example, the unbending step may be performed within two minutes of immediately after the heat treatment process of the connection step is completed.

After the banding-releasing step, the solar cell is placed on the first encapsulant coated on the transparent substrate, and then the second encapsulant and the back sheet are disposed on the plurality of solar cells, followed by thermocompression bonding. can do.

Forming an insulating layer paste on a portion of the plurality of first and second electrodes where a plurality of first and second wirings are not connected and curing the insulating layer before arranging the semiconductor substrate on the curved structure; And applying a conductive adhesive onto a portion of the plurality of first and second electrodes provided on the rear surface of the substrate to be connected to the plurality of first and second wirings.

Here, the curing step of the insulating layer paste may be performed at a temperature between 210 ° C and 250 ° C.

Also, in the step of applying the conductive adhesive, the conductive adhesive may include at least any one of metallic materials represented by the formula Sn, SnCuAg, SnCu or SnPb.

The conductive adhesive may be in the form of a solder paste containing a metal material or a metal material in a resin of at least one of epoxy and silicone.

The solar cell module according to the present invention includes a metallic material having a melting point of 165 ° C to 300 ° C in a conductive adhesive agent for connecting a plurality of first and second wires to the rear surface of the solar cell, .

In addition, a method of manufacturing a solar cell module according to the present invention includes connecting a plurality of first and second wirings to the rear surface of a solar cell through the conductive adhesive in a state where the semiconductor substrate of the solar cell is pre- The problem can be solved.

FIG. 1 is a cross-sectional view of an example of a solar cell module according to the present invention.
2 is a partial perspective view showing an example of a solar cell applied to FIG.
FIG. 3 shows a rear pattern of the first and second electrodes C141 and C142 of the solar cell shown in FIG.
FIG. 4A is a cross-sectional view taken along line Cy1-Cy1 in FIG. 1, FIG. 4B is an enlarged view of a portion in FIG. 4A, Sectional views of the first and second wirings P1 and P2.
Fig. 5 is a view for explaining a modular cross section of a string in which a plurality of solar cells connected in series shown in Figs. 1 and 4 (a) are modulated.
6 is a flowchart for explaining an example of a method of manufacturing a solar cell module as shown in Fig.
7 is a view for explaining the insulating layer forming step (S1) shown in Fig.
FIG. 8 is a view for explaining the banding structure shown in FIG. 6; FIG.
Fig. 9 is a diagram for explaining the arrangement step S3 shown in Fig. 6;
FIG. 10 is a view for explaining a bending step of the semiconductor substrate 110 shown in FIG.
Fig. 11 is a view for explaining the connection step S5 of the first and second wirings P1 and P2 described in Fig. 6;
12 is a view for explaining the banding releasing step (S6) shown in Fig.
13 (a) is a rear view of another example of the solar cell module according to the present invention, and FIG. 13 (b) is a cross-sectional view taken along the line cy3-cy3 in FIG.
FIG. 14 is a view for explaining another example of the arrangement step (S3) of the semiconductor substrate in FIG.
FIG. 15 is a view for explaining another example of the plurality of first and second wiring connection steps (S5) in FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention in the drawings, portions not related to the description are omitted, and like reference numerals are given to similar portions throughout the specification.

Hereinafter, the front surface may be one surface of the semiconductor substrate to which the direct light is incident, and the rear surface may be the opposite surface of the semiconductor substrate in which direct light is not incident, or reflected light other than direct light may be incident.

Hereinafter, a solar cell module according to an embodiment of the present invention will be described with reference to the accompanying drawings.

1 to 5 are views for explaining an example of a solar cell module that can be manufactured according to the method of manufacturing a solar cell module according to the present invention.

2 is a perspective view illustrating a solar cell according to an embodiment of the present invention. FIG. 3 is a cross-sectional view of the solar cell shown in FIG. 2, 4 (a) is a cross-sectional view taken along line Cy1-Cy1 in Fig. 1, and Fig. 4 (b) is a cross- (a) is enlarged. Fig. 4 (c) shows an example of a cross section of the first and second wirings P1 and P2. Fig. 5 is a view for explaining a modular cross section of a string in which a plurality of solar cells connected in series shown in Figs. 1 and 4 (a) are modulated.

As shown in FIG. 1, a solar cell module according to the present invention includes a plurality of solar cells C1 and C2 and a plurality of first and second wirings P1 and P2.

Each of the plurality of solar cells C1 and C2 includes a semiconductor substrate 110 and a plurality of first and second electrodes C141 and C142 formed on the rear surface of the semiconductor substrate 110, The first electrode P1 may be connected to the plurality of first electrodes C141 and the plurality of second wires P2 may be connected to the plurality of second electrodes C142.

The solar cell may include a plurality of first electrodes C141 and a plurality of second electrodes C142 formed at least on the rear surface of the semiconductor substrate 110 and the semiconductor substrate 110,

2 and 3, a solar cell according to the present invention includes a semiconductor substrate 110, an antireflection film 130, an emitter section 121, a back surface (BSF) 172, a plurality of first electrodes C141, and a plurality of second electrodes C142.

Hereinafter, the antireflection film 130 and the backside electrical part 172 may be omitted. However, the antireflection film 130 and the backside electrical part 172 may be omitted, for example, as shown in FIG. 2 and FIG. Explain.

The semiconductor substrate 110 may be a semiconductor substrate 110 of a first conductivity type, for example, n-type conductivity type silicon. The semiconductor substrate 110 may be formed by doping an impurity of the first conductivity type, for example, an impurity of n-type conductivity, in a semiconductor wafer formed of a crystalline silicon material.

A plurality of emitter portions 121 are spaced apart from each other in a rear surface of the semiconductor substrate 110 facing the front surface and extend in a first direction x. The plurality of emitter portions 121 may include impurities of a second conductivity type opposite to the conductivity type of the semiconductor substrate 110, for example, a p-type conductivity type impurity.

Accordingly, a p-n junction can be formed by the semiconductor substrate 110 and the emitter section 121.

A plurality of the rear electric components 172 are spaced apart from each other in the rear surface of the semiconductor substrate 110 and extend in a first direction x parallel to the plurality of emitter portions 121. Therefore, as shown in FIGS. 2 and 3, a plurality of emitter sections 121 and a plurality of rear electric sections 172 may be alternately arranged on the rear surface of the semiconductor substrate 110.

The plurality of rear electric field sections 172 may be n + + impurity regions containing impurities of the same conductivity type as the semiconductor substrate 110 at a higher concentration than the semiconductor substrate 110.

1 and 4, the illustration of the emitter section 121 and the rear electric section 172 is omitted for the sake of understanding of the drawings.

The plurality of first electrodes C141 may be physically and electrically connected to the emitter section 121 and may be formed on the rear surface of the semiconductor substrate 110 along the emitter section 121. [

The plurality of second electrodes C142 are formed on the rear surface of the semiconductor substrate 110 along the plurality of rear electric sections 172 and electrically connected to the semiconductor substrate 110 through the rear electric section 172, .

Each of the plurality of first electrodes C141 may extend in a first direction x as shown in FIG. 3, and each of the plurality of first electrodes C141 may extend in a first direction x, May be spaced apart from each other in a second direction (y) that intersects.

Each of the plurality of second electrodes C142 may extend in a first direction x as shown in FIG. 3, and each of the plurality of second electrodes C142 may extend in a first direction x, (Y) in the second direction (y).

In addition, the first and second electrodes C141 and C142 may be spaced apart from each other and electrically isolated, and the first electrode C141 and the second electrode C142 may be alternately arranged.

Here, the ratio of the width TC to the thickness TC of each of the first and second electrodes C141 and C142 may be between 1: 200 and 1500. In other words, for example, the thickness TC of each of the first and second electrodes C141 and C142 may be between 0.2 μm and 1 μm, and each of the first and second electrodes C141 and C142 may have a width (WC) may be formed between 200 mu m and 300 mu m.

Thus, by making the ratio of the width TC to the thickness TC of each of the first and second electrodes C141 and C142 between 1: 200 and 1500, the manufacturing cost of the solar cell can be minimized.

In this case, the cross-sectional areas of the first and second electrodes C141 and C142 are excessively reduced so that the resistance of each of the first and second electrodes C141 and C142 may be a problem. However, By appropriately setting the number and the width of the first and second wirings P1 and P2 connected to the first and second wirings C141 and C142, respectively. The plurality of first and second electrodes C141 and C142 may be formed by a sputtering method, for example.

The holes collected through the first electrode (C141) and the electrons collected through the second electrode (C142) in the solar cell according to the present invention manufactured using the above structure are used as electric power of the external device through the external circuit device .

The solar cell applied to the solar cell module according to the present invention is not necessarily limited to those shown in FIG. 2 and FIG. 3, and the first and second electrodes C141 and C142 provided in the solar cell are formed only on the rear surface of the semiconductor substrate 110 Other components can be changed at any time.

For example, in the solar cell module of the present invention, a part of the first electrode C141 and the emitter part 121 are located on the front surface of the semiconductor substrate 110, and a part of the first electrode C141 is formed on the semiconductor substrate 110 And a MWT type solar cell connected to the remaining part of the first electrode C141 formed on the rear surface of the semiconductor substrate 110 through the formed hole.

As shown in FIGS. 1 and 4, a plurality of such solar cells may be arranged long in the second direction y. At this time, the longitudinal direction of the first and second electrodes C141 and C142 provided in the first and second solar cells C1 and C2 may be oriented in the first direction x.

1 to 3 illustrate and illustrate the case where a plurality of first and second electrodes C141 and C142 are arranged in a stripe shape in a first direction x, Each of the first and second electrodes C141 and C142 is arranged long in the first direction (x), but may be arranged in a state where the intermediate middle is broken.

1, the first and second electrodes C141 and C142 may not be formed in a portion where the insulating layer IL is formed in each of the first and second electrodes C141 and C142. That is, each of the plurality of first electrodes C141 is arranged long in the first direction (x), but the first electrode C141 may not be formed at a portion intersecting the plurality of second wirings P2, The plurality of second electrodes C142 may be arranged long in the first direction x and the second electrodes C142 may be spaced apart from each other at portions intersecting the plurality of second wires P2. have. In such a case, the insulating layer IL as shown in Fig. 1 may also be omitted.

1, a plurality of first and second wirings P1 and P2 may be arranged long in a second direction y which intersects with the first and second electrodes C141 and C142.

As shown in FIGS. 1 and 4A, each of the first and second wirings P1 and P2 includes a plurality of first and second electrodes C141 and C142 provided in each solar cell, The conductive adhesive agent CA.

More specifically, as shown in Figs. 1 and 4A, in each of the first and second solar cells C1 and C2, the plurality of first wirings P1 includes a plurality of first electrodes C141, The plurality of second wirings P2 can be connected to the plurality of first electrodes C141 through the conductive adhesive agent CA at the intersections with the plurality of second electrodes C142, CA to the plurality of second electrodes C142.

Here, the conductive adhesive (CA) may be either a solder paste type including a metal material having excellent adhesion between metal materials, or a form containing a metal material in at least one resin of epoxy or silicone One can be used.

As shown in Figs. 1 and 4A, such a conductive adhesive CA has a structure in which a plurality of first wirings P1 and a plurality of first electrodes C141 intersect each other, P1 and the first electrode C141 or between the second wiring P2 and the second electrode C142 in each portion where the plurality of second wirings P2 and the plurality of second electrodes C142 cross each other, As shown in FIG.

4A, it is preferable that the conductive adhesive CA be located only at a portion where a plurality of first and second wirings P1 and P2 intersect with the first and second electrodes C141 and C142 4A and 4B, the conductive adhesive CA may be coated on the entire surface of each of the first and second wirings P1 and P2, where, as shown in Figs. 4B and 4C, At portions where the first and second wirings P1 and P2 and the portions intersecting the first and second electrodes C141 and C142 should be connected to each other as shown in FIG. A plurality of first and second wirings P1 and P2 and a plurality of first and second electrodes C141 and C142 can be connected to each other by a conductive adhesive CA coated on the surfaces of the two wirings P1 and P2 have.

Thus, when the conductive adhesive agent CA is coated on the surface of each of the first and second wirings P1 and P2, the coating thickness TCA may be between approximately 10 μm and 30 μm. In addition, the widths of the first and second wirings P1 and P2 may be between 0.15 mm and 3 mm.

At this time, as shown in FIG. 4 (b), a plurality of first and second wirings P1 and P2 are formed at a portion where the plurality of first and second wirings P1 and P2 intersect with the plurality of first and second electrodes C141 and C142, A plurality of first and second electrodes C141 and C142 are formed at a portion where a plurality of first and second wirings P1 and P2 are to be connected by a part of the conductive adhesive CA coated on the surfaces of the wirings P1 and P2, C142.

The plurality of first wirings P1 in each of the first and second solar cells C1 and C2 are electrically connected to the plurality of second electrodes C142 by an insulating layer IL at a portion intersecting the plurality of second electrodes C142. And the plurality of second wirings P2 may be insulated from the plurality of first electrodes C141 by an insulating layer IL at a portion intersecting the plurality of first electrodes C141 .

Here, the insulating layer IL may be any insulating material, and for example, an epoxy resin or a silicon-based insulating resin may be used.

At this time, for example, it is preferable that the material to be applied to the insulating layer IL has a melting temperature of about 400 ° C or higher and a curing temperature of 210 ° C to 250 ° C. Here, however, the curing temperature may differ from the above-described temperature range depending on the production method.

1, when the semiconductor substrate 110 of the first and second solar cells C1 and C2 is viewed from the rear side, the ends of the first and second wirings P1 and P2 are connected to the respective semiconductor It may be drawn out of the substrate 110 and connected to a separate interconnector (IC).

1, the end of the first wiring P1 is drawn out of the semiconductor substrate 110 in the first solar cell C1, the second wiring of the second solar cell C2 is drawn out of the semiconductor substrate 110, The first wiring P1 of the first solar cell C1 and the second wiring P2 of the second solar cell C2 are connected to the first and second solar cells C1, And can be connected to an interconnection IC located between the batteries C1 and C2.

The first wiring P1 of the first solar cell C1 and the second wiring P2 of the second solar cell C2 are connected to each other through the interconnection IC, As shown in FIG.

1 and 4A, the length direction of the interconnector IC is the same as the length direction of the first and second electrodes C141 and C142 of each solar cell in the first direction x ). ≪ / RTI > Here, the interconnector (IC) may be formed of a metal pad.

Thus, the plurality of solar cells C1 and C2 extending long in the second direction y can be connected in series by the first and second wirings P1 and P2 to form one string.

1 and 4A, a first wiring P1 of the first solar cell C1 and a second wiring P2 of the second solar cell C2 are separately connected to an interconnection IC However, the first and second solar cells C1 and C2 may be formed by only the first wiring P1 and the second wiring P2 without providing an interconnection IC separately. It is also possible to connect them in series.

Specifically, unlike FIG. 1 and FIG. 4 (a), the first wiring P1 connected to the first electrode C141 of the first solar cell C1 is not connected to the second May extend to the back surface of the semiconductor substrate 110 of the solar cell C2 and may be connected to the second electrode C142 of the second solar cell C2.

The second wiring P2 connected to the second electrode C142 of the first solar cell C1 also extends to the rear surface of the semiconductor substrate 110 of another adjacent solar cell, And may be connected to the first electrode C141 of another solar cell adjacent to the opposite side of the second solar cell C2.

As such, the strings of the plurality of solar cells connected in series shown in Figs. 1 and 4 (a) can be modularized as shown in Fig.

5, a plurality of solar cells connected in series to each other by a plurality of first and second wirings P1 and P2 are placed on a first encapsulation material EC1 coated on a transparent substrate FG Thereafter, it can be modularized by a lamination process in which a second sealing material EC2 and a back sheet (BS) are disposed on a plurality of solar cells C1 and C2, and thermocompression bonding is performed. At this time, the heat treatment temperature in the lamination process may be between 145 ° C and 165 ° C.

Here, the transparent substrate FG may be made of a light-transmitting glass or a plastic material. The first and second sealing materials EC1 and EC2 are made of elastic material and insulating material, and may include EVA, for example. In addition, the backsheet BS may be formed of an insulating material having a moisture-proof function.

On the other hand, in such a solar cell module, the conductive adhesive (CA) for electrically connecting the plurality of first and second electrodes (C141, C142) and the first and second wirings (P1, P2) to each other has a melting point of 165 Lt; 0 > C to 300 < 0 > C. As a specific example, the conductive adhesive (CA) may include at least any one of metal materials represented by Sn, SnCuAg, SnCu or SnPb.

Therefore, when the conductive adhesive agent (CA) is provided in the form of a solder paste, a conductive adhesive paste, or a conductive adhesive film as described above, the conductive adhesive agent (CA) The material may comprise at least one of the Sn, SnCuAg, SnCu or SnPb materials as described above.

As described above, the use of the conductive adhesive (CA) containing at least one metal material among the materials represented by Sn, SnCuAg, SnCu, or SnPb in the solar cell module according to the present invention ensures the structural stability of the solar cell .

More specifically, the conductive adhesive (CA) that can be used for a solar cell includes SnIn, SnBi, SnPb, Sn, SnCuAg, and SnCu.

Here, SnIn has a melting point of about 118 캜, SnBi has a melting point of about 138 캜, SnPb has a melting point of about 180 캜, and Sn, SnCuAg and SnCu may have a melting point of about 220 캜.

Therefore, when SnIn and SnBi, which have melting points lower than the heat treatment temperature of the lamination process, are used as the conductive adhesive (CA) when forming the solar cell module, the first and second wirings (P1 and P2) The connection step may be performed together with the lamination process for connecting the first and second electrodes C141 and C142 formed on the rear surface of the substrate 110 to the first and second electrodes C141 and C142.

In such a case, the process of the solar cell module can be further simplified. However, when the solar cell module is operated, the internal temperature of the solar cell module may rise to 130 ° C to 150 ° C due to an influence such as a hot spot. In addition, a conductive adhesive having a relatively low melting point (CA ), SnIn or SnBi is used, the bonding force or adhesive force of the conductive adhesive (CA) can be greatly weakened due to the increased internal temperature.

This increases the contact resistance between the first and second electrodes C141 and C142 connected to each other by the conductive adhesive CA and the first and second wirings P1 and P2, Thereby increasing the internal temperature of the battery. This makes it possible to generate a vicious cycle that further deteriorates the adhesive force of the conductive adhesive CA. In a severe case, the first and second electrodes C141 and C142 and the first and second wirings P1 and P2 are partially .

Accordingly, in such a case, the efficiency of the solar cell module may be greatly reduced.

However, as in the present invention, when the internal temperature of a solar cell module using at least one of Sn, SnCuAg, SnCu, or SnPb as a conductive adhesive (CA) is increased to 130 ° C to 150 ° C or even 150 ° C to 160 ° C The metal material such as Sn, SnCuAg, SnCu and SnPb used as the conductive adhesive (CA) has a relatively high melting point. As a result, as described above, the adhesive strength of the conductive adhesive (CA) And it is possible to greatly prevent the disconnection between the first and second electrodes C141 and C142 and the first and second wirings P1 and P2.

Thus, the efficiency of the solar cell module can be prevented from lowering, and the structural stability of the solar cell module can be further secured.

However, when at least one of Sn, SnCuAg, SnCu or SnPb is used as the conductive adhesive (CA) as in the present invention, since the melting point of the conductive adhesive (CA) is higher than the heat treatment temperature in the lamination process, The connection step of connecting the plurality of first and second wirings P1 and P2 to the rear surface of the semiconductor substrate 110 can not be performed together with the lamination process and can not be performed separately.

In this case, during the heat treatment process for connecting the plurality of first and second wirings P1 and P2 to the plurality of first and second electrodes C141 and C142, a plurality of silicon semiconductor substrates 110 and a plurality of The semiconductor substrate 110 of the solar cell may be bent due to a difference in thermal expansion coefficient between the first and second wirings P1 and P2.

In other words, the first and second wirings P1 and P2 are basically examples, and a conductive metal material such as Cu can be used. The first and second wirings P1 and P2 have a thermal expansion coefficient May be much higher than the thermal expansion coefficient of the silicon semiconductor substrate 110.

Therefore, after the heat treatment process of the connection step is completed, tensile force acts on the first and second wirings P1 and P2 while the semiconductor substrate 110 is bent. At this time, the height difference between the both ends of the bent semiconductor substrate 110 and the central portion may be approximately 2 cm to 5 cm.

In such a case, it is very difficult or almost impossible to proceed the lamination process due to the banding of the semiconductor substrate 110. Even if the transparent substrate FG, the first and second sealing materials EC1 and EC2 and the rear sheet BS are modularized together with the solar cell by the lamination process, The portion to which the two wirings P1 and P2 are connected is affected by the tension generated when the plurality of first and second wirings P1 and P2 is continuously cooled.

In addition, due to the tensile stress generated when the first and second wirings P1 and P2 are cooled, the thermal expansion stress of the portion where the first and second wirings P1 and P2 are connected in the semiconductor substrate 110 is continuously received, A plurality of first and second wirings P1 and P2 and a plurality of first and second electrodes C141 and C142 may be formed on the first and second wirings P1 and P2 when the hot spot is generated as described above, May be weakened or disconnected.

However, this problem can be solved by the manufacturing method of the present invention to be described later.

In the following Figs. 6 to 12, an example of a method for manufacturing a solar cell module capable of solving the above-described problems will be described.

6 is a flowchart for explaining an example of a method of manufacturing a solar cell module as shown in Fig. 1, Fig. 7 is a view for explaining an insulating layer forming step (S1) shown in Fig. 6, FIG. 9 is a view for explaining the arrangement step S3 shown in FIG. 6, and FIG. 10 is a view for explaining a bending step of the semiconductor substrate 110 shown in FIG. 6 Fig. 11 is a view for explaining the connection step S5 of the first and second wirings P1 and P2 shown in Fig. 6, Fig. 12 is a diagram for explaining the connection step S5 Fig.

7A is a view of the rear surface of the semiconductor substrate 110 with the insulating layer IL and the conductive adhesive CA coated thereon, ) Is a cross-sectional view taken along the line cy2-cy2 in Fig. 7 (a).

A method of manufacturing a solar cell module according to an exemplary embodiment of the present invention includes the steps of forming an insulating layer S1, applying a conductive adhesive S2, arranging a semiconductor substrate S3, bending a semiconductor substrate S4, 2 wiring connection step S5, a semiconductor substrate unbending step S6, and a lamination step S7.

The insulating layer forming step S1 and the conductive adhesive applying step S2 may be omitted in some cases. However, as shown in FIG. 6, the insulating layer forming step S1 and the conductive adhesive applying step S2 The case where the insulating layer forming step S1 and the conductive adhesive applying step S2 are omitted will be described separately.

First, in the insulating layer forming step S1 shown in Fig. 6, as shown in Figs. 7A and 7B, a plurality of first and second wirings C141 and C142 among the plurality of first and second electrodes C141 and C142, A process of applying and curing an insulating layer (IL) paste on a portion where the first and second electrodes P1 and P2 are not connected can be performed. Here, the curing step of the insulating layer (IL) paste may be performed at a temperature of 210 ° C to 250 ° C.

7A and 7B, a plurality of first and second electrodes C141 and C142 provided on the rear surface of the semiconductor substrate 110 are formed in the conductive adhesive applying step S2 shown in FIG. 6, A step of applying and drying a conductive adhesive (CA) may be performed on a portion to which a plurality of first and second wirings P1 and P2 are to be connected.

As described above, the conductive adhesive (CA) to be applied may include a metal material having a melting point of between 165 ° C and 300 ° C. As a concrete example, at least one of metal materials represented by Sn, SnCuAg, SnCu or SnPb Any one of the metal materials may be included.

The metal material of the conductive adhesive (CA) may be in the form of a solder paste or contained in at least one resin of epoxy or silicone.

Here, the area to which the conductive adhesive agent CA is applied may be applied over the area to be connected with the first wiring line P1 among the plurality of first electrodes C141 as already described in Fig. 1, The second electrode C142 may be formed on the second electrode C142.

In addition, the region where the insulating layer IL is formed can be coated on a region of the plurality of first electrodes C141 intersecting with the second wiring P2 as already described in Fig. 1, May be applied over the region of the two electrodes (C142) intersecting with the first wiring (P1).

6, a semiconductor substrate 110 having a plurality of first and second electrodes C141 and C142 may be disposed on a curved surface structure BE having a curved surface.

Here, the curved surface structure BE may have a shape as shown in Fig. 8, for example.

That is, the curved surface BE may have a curved surface along a second direction y which is flat without being formed with a curved surface in the first direction (x) and which intersects the first direction (x).

Therefore, the cross-section from the curved surface structure BE to the second direction y can have a curved surface having a convex shape at the center portion than the edge portion.

In such a curved surface structure BE, the height difference (HD) between the edge portion and the center portion may be approximately 5 mm to 30 mm by the convex curved surface shape.

Here, a vacuum suction port IH may be formed on the curved surface of the curved surface structure BE. Here, the vacuum inlet IH may serve to adsorb the semiconductor substrate 110 on the curved surface of the curved surface structure BE in order to bend the semiconductor substrate 110.

However, as shown in Fig. 8, the vacuum inlet IH in the curved structure BE may be omitted. In such a case, both ends of the semiconductor substrate 110 may be fixed to both ends of the curved surface structure BE by using a fixing tape to bend the semiconductor substrate 110.

9, when the semiconductor substrate 110 is disposed on the curved surface structure BE of FIG. 8, the semiconductor substrate 110 is formed such that the first and second electrodes C141 and C142 are faced upward So that a plurality of the first and second electrodes C141 and C142 can be exposed. That is, a plurality of first and second electrodes C141 and C142 provided on the semiconductor substrate 110 are disposed so as to face the surface of the curved surface structure BE, and the front surface of the semiconductor substrate 110 is curved BE). ≪ / RTI >

1, the longitudinal direction of the first and second electrodes C141 and C142 formed on the rear surface of the semiconductor substrate 110 is a curved surface in the curved surface structure BE, Can be arranged in parallel with the first direction (x) which is not formed. That is, as shown in FIG. 9, the longitudinal direction of the first and second electrodes C141 and C142 may be arranged so as to cross the second direction y in which the curved surface is formed in the curved surface structure BE.

As described above, the semiconductor substrate bending step S4 may be performed in a state where the semiconductor substrate 110 is disposed on the curved surface structure BE.

Next, the semiconductor substrate bending step S4 shown in FIG. 6 may bend the semiconductor substrate 110 along the curved surface shape of the curved surface structure BE.

Specifically, as shown in FIG. 10, the semiconductor substrate bending step S4 may be performed by adsorbing the semiconductor substrate 110 on the vacuum suction port IH. However, as described above, when there is no vacuum suction port IH, it is also possible to fix both ends of the semiconductor substrate 110 to both ends of the curved surface structure BE using a fixing tape.

Accordingly, a plurality of first and second electrodes C141 and C142 extending in the first direction x and a plurality of first and second electrodes C141 and C142 are formed on the semiconductor substrate 110 in the first direction x by the bending step S4 of the semiconductor substrate 110. [ Are not bent, and only the section in the second direction y on the semiconductor substrate 110 can be bent.

10, the both ends of the semiconductor substrate 110 are spaced apart from the center of the semiconductor substrate 110 by 5 mm or more in the front direction of the semiconductor substrate 110, Can be banded to produce a 30 mm height difference (SHD).

Bending the semiconductor substrate 110 such that a height difference (SHD) of 5 mm to 30 mm is generated in the front direction is usually performed by bending the semiconductor substrate 110 with a plurality of first and second wirings P1 and P2 are respectively connected to the first and second electrodes C141 and C142, the semiconductor substrate 110 is bent by approximately 10 mm to 30 mm due to thermal expansion stress.

As described above, the present invention can prevent banding of the semiconductor substrate 110 by pre-bending the semiconductor substrate 110 in a direction opposite to the direction in which the semiconductor substrate 110 is bent.

According to the present invention, the semiconductor substrate 110 is barely bent or can be bent to 5 mm or less even if bent, so that the subsequent lamination step S7 can be easily performed.

6, a plurality of first wirings P1 and a plurality of second wirings P2 (not shown) are formed on the rear surface of the plurality of first and second electrodes C141 and C142, And the plurality of first and second wirings P1 and P2 can be connected to the plurality of first and second electrodes C141 and C142 respectively by the heat treatment process.

Specifically, as shown in Fig. 11, in the plurality of first and second wiring connection steps S5, a plurality of first and second wirings P1 and P2 are formed in the same direction as the curved surface in the curved surface structure BE, Direction and the first and second wirings P1 and P2 can be bent.

As described above, the heat treatment process is performed in a state where the first and second wirings P1 and P2 are bent so that each of the first and second wirings P1 and P2 is electrically connected to the first and second electrodes C141, C142, respectively. At this time, the temperature of the heat treatment process may be between 165 ° C and 300 ° C.

Here, the heat treatment process may be performed, for example, by spraying hot wind on the conductive adhesive CA. However, other heat treatment methods may be used.

In order to more easily dissolve the conductive adhesive (CA), the curved structure (BE) itself may have a temperature of 50 ° C to 100 ° C during the heat treatment process or the heat treatment process.

After each of the first and second wirings P1 and P2 is connected to each of the first and second electrodes C141 and C142 by the heat treatment process as described above, the semiconductor substrate of step S6 ) Can be performed.

The unbending step S6 may be performed by releasing the vacuum state of the vacuum suction inlet IH formed on the surface of the curved surface structure BE. If the fixed tape is used, the banding of the semiconductor substrate 110 can be released by removing the fixing tape again.

12, the semiconductor substrate 110 is restored to its pre-bending state, and the semiconductor substrate 110 can be restored to its original flat state (step S6) have.

Here, the unbending step S6 of the semiconductor substrate may be performed after the heat treatment step of the connection step S5, before the conductive adhesive CA is cured. Specifically, the unbending step S6 may be performed within two minutes immediately after the heat treatment process of the connection step S5 is completed. For example, it is also possible that the unbending step S6 of the semiconductor substrate is performed between 2 seconds and 3 seconds immediately after the heat treatment step of the connection step S5 is completed.

After the unbending step S6 of the semiconductor substrate, the lamination step S7 may be performed.

5, the solar cell is placed on the first encapsulation material EC1 coated on the transparent substrate FG, and then the second encapsulation material EC2 (not shown) is formed on the plurality of solar cells. In this lamination step S7, ) And a back sheet (BS) are disposed.

As described above, after the first and second wirings P1 and P2 are connected and the first and second wirings P1 and P2 are connected in a state where the semiconductor substrate 110 is bent, 110 is released, the above-described thermal expansion stress can be almost completely eliminated.

More specifically, as shown in Fig. 11, each of the first and second wirings P1 and P2 is divided into a plurality of first and second electrodes C141 and C142 by a heat treatment process of a plurality of first and second wiring connection steps S5, The first and second wirings P1 and P2 are subjected to a tensile force in the longitudinal direction of the first and second wirings P1 and P2 due to the thermal expansion coefficients of the first and second wirings P1 and P2, The lengths of the two wirings P1 and P2 can be contracted in the direction of the arrow in Fig.

In such a case, the thermal expansion stress may occur as described above in the portion where the first and second wirings P1 and P2 are connected. As shown in Fig. 12 of the present invention, the bending of the semiconductor substrate 110 is released Even if the first and second wirings P1 and P2 shrink in the longitudinal direction of the first and second wirings P1 and P2 when the semiconductor substrate 110 is planarized, no tensile force is generated and the above- Can be solved.

Thus, it is possible to prevent the semiconductor substrate 110 from being bent in advance.

Accordingly, as shown in FIG. 6, even if the lamination step S7 is performed thereafter, the string in which a plurality of solar cells are connected in series is not disturbed, and the lamination step S7 can be performed more stably.

In addition, since the solar cell module manufactured as described above is in a state in which the thermal expansion stress is eliminated as described above, the structural stability of the solar cell module can be further improved.

In addition, since a conductive adhesive (CA) containing a metal material having a melting point of 165 ° C. to 300 ° C. is used, even if a hot spot rising to 130 ° C. to 150 ° C. occurs in the solar cell module, It is possible to prevent the adhesion and the contact resistance between the first and second electrodes C141 and C142 of the first and second wirings P1 and P2 and the plurality of first and second wirings P1 and P2 from being weakened to further improve the structural stability of the solar cell module have.

6 shows an example in which the conductive adhesive applying step S2 is performed after the insulating layer forming step S1. Alternatively, after the conductive adhesive applying step S2, the insulating layer forming step S1 is performed .

6 shows an example in which the insulating layer forming step S1 and the conductive adhesive applying step S2 are performed before the semiconductor substrate arranging step S3. However, after the semiconductor substrate placing step S3, It is also possible that the insulating layer forming step (S1) and the conductive adhesive applying step (S2) are performed before the first and second wiring connecting steps (S5).

6 illustrates an example in which both the application and curing of the insulating layer (IL) paste are performed in the insulating layer forming step (S1). Alternatively, only the step of applying the insulating layer (IL) It is also possible to carry out the curing process of the insulating layer (IL) paste first in the plurality of first and second wiring connecting steps (S5) before the placing step (S3).

Here, it is also possible to omit the insulating layer forming step S1 and the conductive adhesive applying step S2.

1, each of the plurality of first electrodes C141 is arranged in a long direction in a first direction x, and a plurality of first electrodes C141 are arranged at a portion intersecting the plurality of second wirings P2, A plurality of second electrodes C142 are arranged in a long direction in the first direction x and a plurality of second electrodes C142 are formed in a portion intersecting the plurality of second wires P2, In the case where the two electrodes C142 are formed without being formed, the insulating layer IL is not required, so that the insulating layer forming step S1 shown in FIG. 6 may be omitted.

When the conductive adhesive agent CA is previously coated on each of the first and second wirings P1 and P2 as described in Figs. 4 (b) and 4 (c), the conductive adhesive agent The application step S2 may be omitted.

A plurality of first and second wirings P1 and P2 connected to the rear surface of the semiconductor substrate 110 through a conductive adhesive CA are formed on the first and second electrodes C141 and C142 provided in the solar cell, A plurality of first and second wirings P1 and P2 are formed on the rear surface of the semiconductor substrate 110 in parallel with the first and second electrodes C141 and C142, As shown in FIG.

This will be described in detail with reference to FIGS. 13 to 15. FIG. In the following Figs. 13 to 15, the description of the parts overlapping with the parts described in the preceding Figs. 1 to 12 will be omitted, and the other parts will be mainly described.

13 (a) is a rear view of another example of the solar cell module according to the present invention, and FIG. 13 (b) is a cross-sectional view taken along the line cy3-cy3 in FIG.

13A, a solar cell module according to another exemplary embodiment of the present invention includes a plurality of first and second electrodes C141 and C142 formed on the rear surface of a semiconductor substrate 110, The first and second wirings P1 and P2 may be arranged in the same direction as the longitudinal direction of the first and second wirings P1 and P2 connected to the first and second electrodes C141 and C142 through the conductive adhesive CA.

13 (a), in the solar cell module according to another example of the present invention, a plurality of first, second, and third solar cells C1, C2, and C3 are arranged in the second direction y When the second and third solar cells C2 and C3 are disposed adjacent to both sides of the first solar cell C1 and arranged in a line along the first and second solar cells C1, The longitudinal direction of the plurality of first and second electrodes C141 and C142 and the plurality of first and second wirings P1 and P2 may be elongated in the second direction y.

The plurality of first electrodes C141 provided in the first solar cell C1 and the plurality of second electrodes C142 provided in the second and third solar cells C2 and C3 are disposed on the same line And the plurality of second electrodes C142 provided in the first solar cell C1 and the plurality of first electrodes C141 provided in the second and third solar cells C2 and C3 are connected to the same line- Lt; / RTI >

The plurality of first wirings P1 are connected to the plurality of first electrodes C141 provided in the first solar cell C1 and the plurality of second electrodes C142 provided in the second solar cell C2, And the first and second solar cells C1 and C2 can be connected in series to each other through the conductive adhesive CA.

The plurality of second wirings P2 are connected to the plurality of second electrodes C142 provided in the first solar cell C1 and the plurality of first electrodes C141 provided in the third solar cell C3, And the first and third solar cells C1 and C3 can be connected in series to each other through the conductive adhesive CA.

Here, the conductive adhesive (CA) may be a solder paste, or a form including a metal material in at least one resin of epoxy or silicone.

13B, the conductive adhesive CA is placed only between a plurality of first and second electrodes C141 and C142 and a plurality of first and second wirings P1 and P2, The conductive adhesive CA may be coated on the entire surface of each of the first and second wirings P1 and P2 as described in FIGS. 4 (b) and 4 (c).

The conductive adhesive (CA) may include a metal material having a melting point of 165 ° C to 300 ° C, for example, Sn, SnCuAg, SnCu, SnPb, SnPb, or SnPb.

13, a plurality of first and second wirings P1 and P2 connected to a plurality of first and second electrodes C141 and C142 provided in the first solar cell C1 through a conductive adhesive CA, The first and second electrodes C141 and C142 provided in the adjacent second and third solar cells C2 and C3 are connected in series without a separate interconnection IC, May be connected in series with an adjacent second, third solar cell C2, C3 connected to a separate interconnector (IC), as shown in Fig.

As described above, a method of manufacturing a solar cell module according to another example of the present invention will be described with reference to FIGS. 14 and 15. FIG.

FIG. 14 is a view for explaining another example of the arrangement step (S3) of the semiconductor substrate in FIG. 6, and FIG. 15 is a view for explaining another example of the plurality of first and second wiring connection steps (S5) Respectively.

The manufacturing method of the solar cell module according to another example of the present invention may be similar to that described in FIG. 6, but some manufacturing steps may be omitted or varied.

That is, except for the insulating layer forming step (S1) and the conductive adhesive applying step (S2), the manufacturing method of the solar cell module according to another example of the present invention includes the semiconductor substrate arranging step (S3) A semiconductor substrate bending step S4, a plurality of first and second wiring connecting steps S5, a semiconductor substrate unbending step S6, and a lamination step S7.

Accordingly, in the manufacturing method of the solar cell module according to another example of the present invention, the insulating layer forming step (S1) and the conductive adhesive applying step (S2) in the manufacturing method described with reference to FIG. 6 may be omitted.

Specifically, a plurality of first electrodes C141, a plurality of second wirings P2, and a plurality of second electrodes (not shown) that do not need to be connected to each other in the first solar cell C1 of the solar cell module shown in Fig. C142 and the plurality of first wirings P1 do not overlap or intersect with each other, the insulating layer IL as described with reference to FIG. 1 may not be required. Therefore, the insulating layer forming step (S1) as described in Fig. 6 can be omitted.

In addition, as described above, even when the conductive adhesive agent CA is coated on the entire surface of each of the first and second wirings P1 and P2, the step S2 of applying the conductive adhesive agent described in Fig. 6 is omitted .

14, in the semiconductor substrate arranging step S3 of the method for manufacturing a solar cell module according to another example of the present invention, the semiconductor substrate 110 has a plurality of first and second electrodes C141 and C142 upward So that a plurality of the first and second electrodes C141 and C142 can be exposed. That is, the front surface of the semiconductor substrate 110 faces the surface of the curved surface structure BE. Here, the curved surface structure BE may have the same structure as that described above with reference to FIG.

14, the longitudinal direction of a plurality of first and second electrodes C141 and C142 formed on the rear surface of the semiconductor substrate 110 is a curved surface formed in the curved surface structure BE And may be disposed so as to face the second direction (y). As described above, the semiconductor substrate bending step S4 may be performed in a state where the semiconductor substrate 110 is disposed on the curved surface structure BE.

Next, the semiconductor substrate bending step S4 may bend the semiconductor substrate 110 along the curved surface shape of the curved surface structure BE in the same manner as described above with reference to FIGS.

Next, in the plurality of first and second wiring connection steps S5, the longitudinal direction of the first and second electrodes C141 and C142 and the direction in which the curved surface of the curved surface structure BE is formed Similarly, a plurality of first wirings P1 and a plurality of second wirings P2 are arranged long in the second direction y, and each of the first and second wirings P1 and P2 is divided into a plurality of Can be connected to the first and second electrodes C141 and C142, respectively.

Specifically, as shown in FIG. 15, in a plurality of first and second wiring connection steps S5, a plurality of first and second wirings P1 and P2 are formed in the same direction as the curved surface in the curved surface structure BE, Direction and the first and second wirings P1 and P2 can be bent.

 The conductive bonding agent CA coated on the surfaces of the first and second wirings P1 and P2 is melted by heat treatment in a state where the first and second wirings P1 and P2 are bent, The first and second wirings P1 and P2 may be connected to the first and second electrodes C141 and C142, respectively. At this time, the temperature of the heat treatment process may be between 165 ° C and 300 ° C.

Thereafter, the step of releasing the semiconductor substrate from the unbending process (S6) is performed as described above with reference to Figs. 6 and 12, so that the solar cell module as described in Figs. 13A and 13B can be formed.

Thereafter, the same lamination step S7 as described above in Fig. 6 can be performed.

As described above, the method of manufacturing a solar cell module according to the present invention is a method of manufacturing a solar cell module in which a plurality of first and second wirings P1 and P2 are connected to a semiconductor substrate 110 And a plurality of first and second wirings P1 and P2 are connected to each of the first and second electrodes C141 and C142 while the semiconductor substrate 110 is bent, The banding problem of the solar cell module can be solved, thereby further securing the structural stability of the solar cell module.

It will be apparent to those skilled in the art that various modifications, substitutions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. will be.

Therefore, the embodiments disclosed in the present invention and the accompanying drawings are intended to illustrate and not to limit the technical spirit of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments and the accompanying drawings . The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

Claims (26)

1. A solar cell comprising: a semiconductor substrate; a plurality of first electrodes and a plurality of second electrodes spaced apart from each other on a rear surface of the semiconductor substrate;
A plurality of first wires connected to the plurality of first electrodes provided on a rear surface of the semiconductor substrate through a conductive adhesive; And
And a plurality of second wires connected to the plurality of second electrodes provided on the rear surface of the semiconductor substrate through the conductive adhesive,
Wherein the conductive adhesive includes a metal material having a melting point of 165 ° C to 300 ° C. The method according to claim 1,
Wherein the conductive adhesive comprises at least one metal material selected from the group consisting of Sn, SnCuAg, SnCu and SnPb. The method according to claim 1,
Wherein the conductive adhesive is coated on the surface of each of the first and second wiring lines,
Wherein the conductive adhesive is located between the first wiring and the first electrode of each of the portions where the plurality of first wires and the plurality of first electrodes cross each other or between the plurality of second wires and the plurality of second electrodes And the second electrode and the second electrode of each intersecting portion. The method according to claim 1,
Wherein the conductive adhesive is in the form of a solder paste containing the metallic material or a metallic material contained in a resin of at least one of epoxy or silicone. The method according to claim 1,
Wherein the plurality of first and second electrodes are elongated in a first direction on a rear surface of the solar cell. 6. The method of claim 5,
Wherein each of the plurality of first and second wirings is connected to the plurality of first and second electrodes in a second direction intersecting with the first direction. The method according to claim 1,
Wherein a width of the plurality of first and second wirings is between 0.15 mm and 3 mm. Disposing a semiconductor substrate having a plurality of first and second electrodes on a rear surface thereof on a curved surface structure having a curved surface;
Bending both ends of the semiconductor substrate in a front direction along a curved shape of the curved surface structure;
Arranging a plurality of first wirings and a plurality of second wirings on the plurality of first and second electrodes and connecting each of the plurality of first and second wirings to the plurality of first and second electrodes in a heat treatment step ; And
And releasing the bending of the semiconductor substrate. 9. The method of claim 8,
In the step of disposing the semiconductor substrate on the curved structure,
Wherein the semiconductor substrate is disposed such that the first and second electrodes are oriented in a direction opposite to a surface of the curved surface structure. 9. The method of claim 8,
Wherein the curved surface structure is formed without a curved surface in a first direction and is formed in a flat shape along a second direction intersecting with the first direction. 11. The method of claim 10,
Wherein the cross-section in the second direction in the curved surface structure has a curved surface having a convex shape at an intermediate portion than an edge portion. 9. The method of claim 8,
Wherein the curved surface of the curved structure has a vacuum suction port. 13. The method of claim 12,
In the step of bending the semiconductor substrate,
Wherein the semiconductor substrate is adsorbed to the vacuum inlet and is bent. 9. The method of claim 8,
In the step of bending the semiconductor substrate,
Wherein the semiconductor substrate is bent so that both ends of the semiconductor substrate have a height difference of 1 mm to 30 mm in a front direction of the semiconductor substrate from a center portion of the semiconductor substrate. 9. The method of claim 8,
In the step of arranging and connecting the plurality of first and second wirings,
Wherein the first and second wirings are arranged long in the second direction which is the same as the direction in which the curved surface is formed in the curved structure so that the first and second wirings are bent. 9. The method of claim 8,
In the step of arranging and connecting the plurality of first and second wirings,
Wherein the heat treatment process is performed while the plurality of first and second wirings are bent. 9. The method of claim 8,
In the step of arranging and connecting the plurality of first and second wirings,
Wherein the temperature of the heat treatment process is between 165 ° C and 300 ° C. 13. The method of claim 12,
Wherein the unbending step is performed by releasing the vacuum of the vacuum inlet formed on the surface of the curved structure. 9. The method of claim 8,
And the semiconductor substrate is restored to a state before bending by the bending releasing step. 9. The method of claim 8,
Wherein the unbending step is performed before the conductive adhesive is cured by a heat treatment process in the connecting step. 9. The method of claim 8,
Wherein the unbending step is performed within two minutes immediately after the heat treatment process of the connection step is completed. 9. The method of claim 8,
After the unbending step,
And a lamination step of placing the solar cell on a first encapsulant applied on a transparent substrate and then thermally bonding the second encapsulant and the back sheet on the plurality of solar cells. Gt; 9. The method of claim 8,
Before the step of disposing the semiconductor substrate on the curved structure,
An insulating layer forming step of applying and curing an insulating layer paste on a portion of the plurality of first and second electrodes not connected to the plurality of first and second wirings;
And applying a conductive adhesive to a portion of the plurality of first and second electrodes provided on the rear surface of the semiconductor substrate to be connected to the plurality of first and second wirings. 24. The method of claim 23,
Wherein the curing step of the insulating layer paste is performed at a temperature of 210 ° C to 250 ° C. 24. The method of claim 23,
In the step of applying the conductive adhesive,
Wherein the conductive adhesive includes at least one metal material selected from the group consisting of Sn, SnCuAg, SnCu and SnPb. 26. The method of claim 25,
Wherein the conductive adhesive is in the form of a solder paste containing the metallic material or a metallic material contained in at least one resin of epoxy or silicone.

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