JP5273728B2 - Solar cell with wiring sheet and solar cell module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solar cell and a solar cell with a wiring sheet for reducing a manufacturing cost of the solar cell module, and to provide a solar cell module. <P>SOLUTION: A solar cell includes: a semiconductor substrate on which first conductive type impurity diffused regions and second conductive type impurity diffused regions are formed; electrodes for the first conductive types provided on one surface side of the semiconductor substrate corresponding to the first conductive type impurity diffused regions; and electrodes for the second conductive types provided on one surface side of the semiconductor substrate corresponding to the second conductive type impurity diffused regions. At least one of the electrode for the first conductive types and the electrode for the second conductive types are divided into the number of segments to form the solar cell, the solar cell with the wiring sheet, and the solar cell module. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

The present invention relates to a solar battery cell and a solar cell module with wiring sheet.

  In recent years, in particular, from the viewpoint of protecting the global environment, solar cells that convert solar energy into electrical energy have been rapidly expected as next-generation energy sources. There are various types of solar cells, such as those using compound semiconductors and those using organic materials, but currently, solar cells using silicon crystals are the mainstream.

  Currently, the most manufactured and sold solar cells have an n-electrode formed on the surface on which sunlight is incident (light-receiving surface), and a p-electrode on the surface opposite to the light-receiving surface (back surface). It is of the formed structure.

  For example, Patent Document 1 discloses a back electrode type solar battery cell in which an electrode is not formed on the light receiving surface of the solar battery cell, and an n electrode and a p electrode are formed only on the back surface of the solar battery cell.

JP 2005-310830 A

  The back surface electrode type solar cell unit having the configuration disclosed in Patent Document 1 described above has limited electric energy that can be used. Therefore, a method of electrically connecting a plurality of back electrode type solar cells having the above-described configuration to form a solar cell module has been studied.

  Here, as a method of forming a solar cell module by electrically connecting a plurality of back electrode type solar cells, a solar cell with a wiring sheet in which a back electrode type solar cell is installed on a wiring sheet is sealed. A method of forming a solar cell module by sealing with a stopper is considered.

  Hereinafter, with reference to the schematic cross-sectional views of FIG. 10A and FIG. 10B, an example of a method for producing a solar cell module by sealing the above-described solar cell with wiring sheet with a sealing material. Will be described.

  First, as shown to Fig.10 (a), the back electrode type photovoltaic cell 80 and the wiring sheet 100 are adhere | attached with the insulating adhesive 16, and a photovoltaic cell with a wiring sheet is produced.

  Here, in the solar cell with the wiring sheet, the first conductivity type electrode 6 in contact with the first conductivity type impurity diffusion region 2 on the back surface of the semiconductor substrate 1 of the back electrode type solar cell 80 is the insulating property of the wiring sheet 100. The second conductivity type that is installed on the first conductivity type wiring 12 formed on the base material 11 and is in contact with the second conductivity type impurity diffusion region 3 on the back surface of the semiconductor substrate 1 of the back electrode type solar cell 80. The electrode 7 is installed on the second conductivity type wiring 13 formed on the insulating substrate 11 of the wiring sheet 100.

  A texture structure is formed on the light receiving surface of the semiconductor substrate 1 of the back electrode type solar cell 80, and the antireflection film 5 is formed on the texture structure. A passivation film 4 is formed on the back surface of the semiconductor substrate 1 of the back electrode type solar cell 80.

  Next, as shown in FIG. 10B, the solar cell with a wiring sheet produced as described above is sealed with a transparent substrate 17 such as a glass substrate provided with a sealing material 18 such as ethylene vinyl acetate, and the like. A solar cell module is produced by sandwiching between a back film 19 such as a polyester film provided with a stopper 18.

  Moreover, another example of the method of producing a solar cell module by sealing the solar cell with a wiring sheet into a sealing material in the schematic cross-sectional views of FIGS. 11 (a) and 11 (b). Illustrate.

  In this method, first, as shown in FIG. 11A, a back electrode type solar battery cell 80 and a wiring sheet 100 are adhered by a conductive adhesive 15 to produce a solar battery cell with a wiring sheet.

  Here, the connection between the first conductivity type electrode 6 of the back electrode type solar cell 80 and the first conductivity type wire 12 of the wiring sheet 100, and the second conductivity type electrode 7 of the back electrode type solar cell 80. Are connected to the second conductive type wiring 13 of the wiring sheet 100 using a conductive adhesive 15.

  Next, as shown in FIG. 11 (b), the solar cell with a wiring sheet produced as described above, the transparent substrate 17 provided with the sealing material 18, and the back film 19 provided with the sealing material 18. A solar cell module is produced by sandwiching between the two.

  Further, in the schematic cross-sectional views of FIG. 12A and FIG. 12B, still another example of a method of manufacturing a solar cell module by sealing the above-described solar cell with wiring sheet with a sealing material. Is illustrated.

  In this method, first, as shown in FIG. 12A, the back electrode type solar cell 80 and the wiring sheet 100 are bonded by the conductive adhesive 15 and the insulating adhesive 16, thereby providing the solar with wiring sheet. A battery cell is produced.

  Thereafter, in the same manner as above, as shown in FIG. 12 (b), the solar cell with the wiring sheet produced as described above is formed of the transparent substrate 17 provided with the sealing material 18, and the sealing material 18. A solar cell module is produced by sandwiching between the back film 19 provided.

  In any of the above methods, the conductive adhesive 15 and the insulating adhesive 16 are each applied by a method such as screen printing, dispenser application, or inkjet application.

  In any of the above methods, the conductive adhesive 15 is used to connect the electrodes (the first conductivity type electrode 6 and the second conductivity type electrode 7) of the back electrode type solar battery cell 80 and the wiring ( The first conductive type wiring 12 and the second conductive type wiring 13) are applied to portions to be connected.

  In any of the above methods, the insulating adhesive 16 is formed between the electrodes of the back electrode solar cell 80 (between the first conductivity type electrode 6 and the second conductivity type electrode 7) and It is applied to a region between the wirings of the wiring sheet 100 (between the first conductive type wiring 12 and the second conductive type wiring 13).

  In any of the above methods, the conductive adhesive 15 and the insulating adhesive 16 are cured by a treatment such as ultraviolet irradiation or heating.

  Here, when the conductive adhesive 15 and the insulating adhesive 16 are cured using ultraviolet irradiation, the back electrode type solar cells 80 are cured before being sealed in the sealing material 18.

  When the conductive adhesive 15 and the insulating adhesive 16 are cured by heating, the back electrode type solar cell 80 is cured before or simultaneously with the sealing of the sealing material 18.

  According to the above method, since the plurality of back electrode type solar cells 80 can be electrically connected only by installing the back electrode type solar cells 80 on the wiring sheet 100, the solar cell module can be efficiently used. Can be manufactured automatically.

  However, it is required to further reduce the manufacturing cost of the solar cell module having the above configuration.

In view of the above circumstances, an object of the present invention is to provide a wiring sheet with the solar cell and a solar cell module Ru can be reduced and the manufacturing cost of the solar cell module.

The present invention also includes a solar battery cell and a wiring sheet. The solar battery cell includes a semiconductor substrate on which a first conductivity type impurity diffusion region and a second conductivity type impurity diffusion region are formed, and a first conductivity type impurity. A first conductivity type electrode provided on one surface side of the semiconductor substrate corresponding to the diffusion region, and a second conductivity type provided on one surface side of the semiconductor substrate corresponding to the second conductivity type impurity diffusion region. The wiring sheet has an insulating base, a first conductive type wiring and a second conductive type wiring installed on the insulating base, and the solar cell The first conductivity type electrode is installed in contact with the first conductivity type wiring of the wiring sheet, and the second conductivity type electrode of the solar battery cell is installed in contact with the second conductivity type wiring of the wiring sheet. And at least one of the first conductivity type electrodes is a first conductivity type impurity diffusion region. Ri Na is divided into a plurality for one, it is divided wiring sheet solar cell with the conductive adhesive that is disposed in an area between the first conductivity type electrode.

Here, in the photovoltaic cell with a wiring sheet of the present invention, it is preferable that at least one of the second conductivity type electrodes is divided into a plurality of ones of the second conductivity type impurity diffusion regions .

Here, in the solar cell with the interconnection sheet of the present invention, the conductive adhesive in the region between the second conductivity type electrode may be disposed which is split.

  Moreover, in the photovoltaic cell with a wiring sheet of this invention, the insulating adhesive agent may be installed in the area | region between the electrode for 1st conductivity types and the electrode for 2nd conductivity types which adjoin.

  Furthermore, this invention is a solar cell module by which the photovoltaic cell of the photovoltaic cell with any one of said wiring sheets is sealed by the sealing material.

According to the present invention, it is possible to provide a wiring sheet with the solar cell and a solar cell module Ru can be reduced and the manufacturing cost of the solar cell module.

It is typical sectional drawing of an example of the solar cell module of this invention. (A)-(g) is typical sectional drawing illustrated about an example of the manufacturing method of the back electrode type photovoltaic cell used for the solar cell module of this invention. It is a typical top view of an example of the back of a back electrode type solar cell used for the solar cell module of the present invention. (A)-(d) is typical sectional drawing illustrated about an example of the manufacturing method of the wiring sheet used for the solar cell module of this invention. It is a typical top view of an example of the wiring sheet used for the solar cell module of the present invention. (A) And (b) is typical sectional drawing illustrated about an example of the manufacturing method of the photovoltaic cell with a wiring sheet of this invention. It is typical sectional drawing of another example of the solar cell module of this invention. It is a typical top view of another example of the wiring sheet used for the solar cell module of the present invention. (A) And (b) is typical sectional drawing illustrated about another example of the manufacturing method of the photovoltaic cell with a wiring sheet of this invention. (A) And (b) is typical sectional drawing illustrating about an example of the method of producing a solar cell module by sealing the photovoltaic cell with a wiring sheet to a sealing material. (A) And (b) is typical sectional drawing illustrating about another example of the method of producing a solar cell module by sealing the photovoltaic cell with a wiring sheet to a sealing material. (A) And (b) is typical sectional drawing illustrating about another example of the method of producing a solar cell module by sealing the photovoltaic cell with a wiring sheet to a sealing material.

  Embodiments of the present invention will be described below. In the drawings of the present invention, the same reference numerals represent the same or corresponding parts.

<Embodiment 1>
In FIG. 1, typical sectional drawing of an example of the solar cell module of this invention is shown. The solar cell module having the configuration shown in FIG. 1 includes a solar cell with a wiring sheet in which a back electrode type solar cell 8 is installed on a wiring sheet 10, a transparent substrate 17 such as a glass substrate, and a back film 19 such as a polyester film. It is configured to be sealed in a sealing material 18 such as ethylene vinyl acetate.

  Here, the back electrode type solar cell 8 includes the semiconductor substrate 1, the first conductivity type impurity diffusion region 2 and the second conductivity type impurity diffusion region 3 formed on the back surface of the semiconductor substrate 1, and the first conductivity type impurity. A first conductivity type electrode 6 formed so as to be in contact with the diffusion region 2 and a second conductivity type electrode 7 formed so as to be in contact with the second conductivity type impurity diffusion region 3 are included.

  In addition, a concavo-convex structure such as a texture structure is formed on the light receiving surface of the semiconductor substrate 1 of the back electrode type solar battery cell 8, and an antireflection film 5 is formed so as to cover the concavo-convex structure. A passivation film 4 is formed on the back surface of the semiconductor substrate 1 of the back electrode type solar cell 8.

  In addition, the first conductivity type electrode 6 on the back surface of the back electrode type solar cell 8 is divided into a plurality of parts in one first conductivity type impurity diffusion region 2, and the second conductivity type electrode 7 is one in number. The two conductivity type impurity diffusion region 3 is divided into a plurality of regions.

  In this example, the first conductivity type impurity diffusion region 2 and the second conductivity type impurity diffusion region 3 are each formed in a strip shape extending to the front surface side and / or the back surface side of FIG. The type impurity diffusion regions 2 and the second conductivity type impurity diffusion regions 3 are alternately arranged at predetermined intervals on the back surface of the semiconductor substrate 1.

  Further, in this example, the first conductivity type electrode 6 and the second conductivity type electrode 7 are also formed in strips extending to the front side and / or the back side of the paper surface of FIG. The electrode 6 and the second conductivity type electrode 7 pass through the opening provided in the passivation film 4 along the first conductivity type impurity diffusion region 2 and the second conductivity type impurity diffusion region 3 on the back surface of the semiconductor substrate 1, respectively. The first conductivity type impurity diffusion region 2 and the second conductivity type impurity diffusion region 3 are formed in contact with each other.

  On the other hand, the wiring sheet 10 includes an insulating base material 11 and first conductive type wirings 12 and second conductive type wirings 13 formed in a predetermined shape on the surface of the insulating base material 11. .

  Further, the first conductive type wiring 12 on the insulating base material 11 of the wiring sheet 10 and the first conductive type electrode 6 divided into a plurality on the back surface of the back electrode type solar battery cell 8 one by one. It is formed in a facing shape.

  Further, the second conductive type wiring 13 on the insulating base material 11 of the wiring sheet 10 and the second conductive type electrode 7 divided into a plurality on the back surface of the back electrode type solar cell 8, one by one. It is formed in a facing shape.

  In this example, the first conductivity type wiring 12 and the second conductivity type wiring 13 are also formed in strips extending to the front surface side and / or the back surface side of FIG.

  And the said back electrode type solar cell 8 and said wiring sheet 10 are adhere | attached with the conductive adhesive 15 and the insulating adhesive 16, and the photovoltaic cell with a wiring sheet is formed.

  Here, in the solar cell with the wiring sheet, the first conductivity type electrode 6 of the back electrode type solar cell 8 is installed so as to be in contact with the surface of the first conductivity type wiring 12 of the wiring sheet 10, The second conductivity type electrode 7 of the back electrode type solar cell 8 is installed so as to be in contact with the surface of the second conductivity type wiring 13 of the wiring sheet 10.

  Then, the passivation film 4 of the back electrode type solar cell 8, the adjacent first conductivity type electrode 6 divided into a plurality of the back electrode type solar cell 8, and the adjacent first conductivity type wiring 12 of the wiring sheet 10. The conductive adhesive 15 is filled in the space surrounded by the insulating base material 11 of the wiring sheet 10.

  Further, the passivation film 4 of the back electrode type solar cell 8, the adjacent second conductivity type electrode 7 divided into a plurality of the back electrode type solar cell 8, and the adjacent second conductivity type wiring 13 of the wiring sheet 10. The space surrounded by the insulating base material 11 of the wiring sheet 10 is also filled with the conductive adhesive 15.

  Further, the passivation film 4 of the back electrode type solar cell 8, the first and second conductivity type electrodes 6 and 7 adjacent to each other in the back electrode type solar cell 8, and the adjacent first conductivity type of the wiring sheet 10. An insulating adhesive 16 is filled in the space surrounded by the insulating base 11 of the wiring 12 and the second conductive type wiring 13 and the wiring sheet 10.

  Hereinafter, an example of the manufacturing method of the solar cell module having the configuration shown in FIG. 1 will be described. In the following, after the method for forming the back electrode type solar cell 8 is first described, the method for forming the wiring sheet 10 will be described next, followed by the back electrode type solar cell 8 and the wiring sheet 10. Will be described, and finally a method for forming a solar cell module will be described. In the present invention, the back electrode type solar cell 8 and the wiring sheet 10 are formed. The order is not particularly limited.

  First, as shown in the schematic cross-sectional view of FIG. 2A, a semiconductor substrate 1 in which slice damage 1a is formed on the surface of the semiconductor substrate 1 is prepared by, for example, slicing from an ingot. Here, as the semiconductor substrate 1, for example, a silicon substrate made of polycrystalline silicon, single crystal silicon, or the like having either n-type or p-type conductivity can be used.

  Next, as shown in the schematic cross-sectional view of FIG. 2B, the slice damage 1a on the surface of the semiconductor substrate 1 is removed. Here, the removal of the slice damage 1a is performed, for example, when the semiconductor substrate 1 is made of the above silicon substrate, the surface of the silicon substrate after the above slice is mixed with an aqueous solution of hydrogen fluoride and nitric acid, sodium hydroxide, or the like. It can be performed by etching with an alkaline aqueous solution or the like.

  Here, the size and shape of the semiconductor substrate 1 after removal of the slice damage 1a are not particularly limited, but the thickness of the semiconductor substrate 1 can be set to, for example, 50 μm or more and 400 μm or less.

  Next, as shown in the schematic cross-sectional view of FIG. 2C, the first conductivity type impurity diffusion region 2 and the second conductivity type impurity diffusion region 3 are formed on the back surface of the semiconductor substrate 1, respectively. Here, the first conductivity type impurity diffusion region 2 can be formed, for example, by a method such as vapor phase diffusion using a gas containing the first conductivity type impurity, and the second conductivity type impurity diffusion region 3 is, for example, Further, it can be formed by a method such as vapor phase diffusion using a gas containing a second conductivity type impurity.

  Here, the first conductivity type impurity diffusion region 2 is not particularly limited as long as it includes the first conductivity type impurity and exhibits n-type or p-type conductivity. As the first conductivity type impurity, for example, an n-type impurity such as phosphorus can be used when the first conductivity type is n-type, and when the first conductivity type is p-type, for example, boron or A p-type impurity such as aluminum can be used.

  The second conductivity type impurity diffusion region 3 is not particularly limited as long as it contains the second conductivity type impurity and has a conductivity type opposite to that of the first conductivity type impurity diffusion region 2. As the second conductivity type impurity, for example, an n-type impurity such as phosphorus can be used when the second conductivity type is n-type, and when the second conductivity type is p-type, for example, boron or A p-type impurity such as aluminum can be used.

  The first conductivity type may be either n-type or p-type, and the second conductivity type may be any conductivity type opposite to the first conductivity type. That is, when the first conductivity type is n-type, the second conductivity type is p-type, and when the first conductivity type is p-type, the second conductivity type is n-type.

As the gas containing the first conductivity type impurity, when the first conductivity type is n-type, for example, a gas containing an n-type impurity such as phosphorus such as POCl ₃ can be used. When the type is p-type, for example, a gas containing p-type impurities such as boron such as BBr ₃ can be used.

Further, as the gas containing the second conductivity type impurity, when the second conductivity type is n-type, for example, a gas containing an n-type impurity such as phosphorus such as POCl ₃ can be used. When the type is p-type, for example, a gas containing p-type impurities such as boron such as BBr ₃ can be used.

  Next, as shown in the schematic cross-sectional view of FIG. 2D, a passivation film 4 is formed on the back surface of the semiconductor substrate 1. Here, the passivation film 4 can be formed by a method such as a thermal oxidation method or a plasma CVD (Chemical Vapor Deposition) method.

  Here, as the passivation film 4, for example, a silicon oxide film, a silicon nitride film, or a stacked body of a silicon oxide film and a silicon nitride film can be used, but is not limited thereto.

  The thickness of the passivation film 4 can be set to, for example, 0.05 μm or more and 1 μm or less.

  Next, as shown in the schematic cross-sectional view of FIG. 2E, after forming an uneven structure such as a texture structure on the entire light receiving surface of the semiconductor substrate 1, an antireflection film 5 is formed on the uneven structure. .

  Here, the texture structure can be formed, for example, by etching the light receiving surface of the semiconductor substrate 1. For example, when the semiconductor substrate 1 is a silicon substrate, the semiconductor is used by using an etching solution obtained by heating a solution obtained by adding isopropyl alcohol to an alkaline aqueous solution such as sodium hydroxide or potassium hydroxide to 70 ° C. or more and 80 ° C. or less, for example. It can be formed by etching the light receiving surface of the substrate 1.

  The antireflection film 5 can be formed by, for example, a plasma CVD method. As the antireflection film 5, for example, a silicon nitride film or the like can be used, but is not limited thereto.

  Next, as shown in the schematic cross-sectional view of FIG. 2F, a part of the passivation film 4 on the back surface of the semiconductor substrate 1 is removed to form a contact hole 4a and a contact hole 4b. Here, the contact hole 4 a is formed so as to expose at least part of the surface of the first conductivity type impurity diffusion region 2, and the contact hole 4 b is at least part of the surface of the second conductivity type impurity diffusion region 3. It is formed so as to be exposed.

  The contact hole 4a and the contact hole 4b are formed after a resist pattern having openings at portions corresponding to the formation positions of the contact hole 4a and the contact hole 4b is formed on the passivation film 4 by using, for example, photolithography technology. The method of removing the passivation film 4 from the opening of the pattern by etching or the like, or etching the passivation film 4 by applying an etching paste to the portion of the passivation film 4 corresponding to the location where the contact hole 4a and the contact hole 4b are formed and then heating. Then, it can be formed by a removal method or the like.

  Next, as shown in the schematic cross-sectional view of FIG. 2G, the first conductivity type electrode 6 in contact with the first conductivity type impurity diffusion region 2 through the contact hole 4a and the second conductivity type impurity through the contact hole 4b. A second conductivity type electrode 7 in contact with the diffusion region 3 is formed, and a back electrode type solar cell 8 is produced.

  Here, as the first conductivity type electrode 6 and the second conductivity type electrode 7, for example, an electrode made of a metal such as silver can be used, but is not limited thereto.

  The height of each of the first conductivity type electrode 6 and the second conductivity type electrode 7 can be, for example, not less than 5 μm and not more than 50 μm, particularly preferably about 15 μm.

  In FIG. 3, the typical top view of an example of the back surface of the back electrode type photovoltaic cell 8 produced as mentioned above is shown. Here, on the back surface of the back electrode type solar cell 8, the first conductivity type electrode 6 and the second conductivity type electrode 7 are each formed by being divided into strips. Each of the plurality of strip-shaped first conductivity type electrodes 6 is connected to one strip-shaped first conductivity type collector electrode 60, and each of the plurality of strip-shaped second conductivity type electrodes 7 is formed of one strip-shaped electrode. To the second conductivity type collector electrode 70. In this example, the first conductivity type collector electrode 60 is formed to extend in a direction perpendicular to the first conductivity type electrode 6, and the second conductivity type collector electrode 70 is It is formed to extend in a direction perpendicular to the second conductivity type electrode 7.

  Therefore, on the back surface of the back electrode type solar cell 8 having the configuration shown in FIG. 3, one comb-shaped electrode is formed by one first conductivity type collecting electrode 60 and a plurality of first conductivity type electrodes 6. Thus, one comb-shaped electrode is formed by one second-conductivity-type collecting electrode 70 and a plurality of second-conductivity-type electrodes 7. The first conductivity type electrode 6 and the second conductivity type electrode 7 corresponding to the comb teeth of the comb-shaped electrode are arranged so as to face each other and mesh the two comb teeth. One band-shaped first conductivity type impurity diffusion region 2 is arranged on the back surface portion of the semiconductor substrate 1 where the pair (two) of band-shaped first conductivity type electrodes 6 are in contact with each other. One band-shaped second conductivity type impurity diffusion region 3 is arranged on the back surface portion of the semiconductor substrate 1 in contact with the second electrode 7 for the second conductivity type.

  Moreover, the wiring sheet 10 can be produced as follows, for example. First, as shown in the schematic cross-sectional view of FIG. 4A, the conductive layer 41 is formed on the surface of the insulating base material 11. Here, as the insulating base material 11, for example, a substrate made of a resin such as polyester, polyethylene naphthalate, or polyimide can be used, but is not limited thereto.

  Moreover, the thickness of the insulating base material 11 can be 10 micrometers or more and 200 micrometers or less, for example, and it is preferable to set it especially as about 25 micrometers.

  Moreover, as the conductive layer 41, for example, a layer made of a metal such as copper can be used, but is not limited thereto.

  Next, as shown in the schematic cross-sectional view of FIG. 4B, a resist pattern 42 is formed on the conductive layer 41 on the surface of the insulating substrate 11. Here, the resist pattern 42 is formed in a shape having an opening at a place other than the place where the first conductive type wiring 12 and the second conductive type wiring 13 are formed. As the resist constituting the resist pattern 42, for example, a conventionally known resist can be used, and it is applied by a method such as screen printing, dispenser application or ink jet application.

  Next, as shown in the schematic cross-sectional view of FIG. 4C, the conductive layer 41 is patterned by removing the conductive layer 41 exposed from the resist pattern 42 in the direction of the arrow 43, The first conductive type wiring 12 and the second conductive type wiring 13 are formed from the remaining part of the conductive layer 41.

  Here, similarly to the conductive layer 41, a material made of a metal such as copper can be used for the first conductive type wiring 12 and the second conductive type wiring 13. The conductive layer 41 can be removed by, for example, wet etching using an acid or alkali solution. The height of each of the first conductivity type wiring 12 and the second conductivity type wiring 13 can be, for example, not less than 10 μm and not more than 100 μm, and particularly preferably about 35 μm.

  Next, as shown in the schematic cross-sectional view of FIG. 4D, by removing all the resist patterns 42 from the surface of the first conductive type wiring 12 and the surface of the second conductive type wiring 13, a wiring sheet is obtained. 10 is produced.

  In FIG. 5, the typical top view of an example of the surface of the wiring sheet 10 produced as mentioned above is shown. Here, on the surface of the insulating substrate 11 of the wiring sheet 10, the first conductive type wiring 12 and the second conductive type wiring 13 are each formed in a pair of strips. Further, a strip-like connection wiring 14 is formed on the surface of the insulating base material 11 of the wiring sheet 10, and the first conductivity type wiring 12 and the second conductivity type wiring 13 are formed by the connection wiring 14. Electrically connected. The connection wiring 14 can be formed simultaneously with the first conductivity type wiring 12 and the second conductivity type wiring 13, for example, and is the same as the first conductivity type wiring 12 and the second conductivity type wiring 13. The material can be used.

  Thereafter, as shown in the schematic cross-sectional view of FIG. 6A, after applying the conductive adhesive 15 and the insulating adhesive 16 on the surface of the wiring sheet 10 produced as described above, The back electrode type solar cell 8 produced as described above is placed on the wiring sheet 10.

  Thereby, as shown in the schematic cross-sectional view of FIG. 6B, the first conductive type electrode 6 of the back electrode type solar cell 8 is installed on the surface of the first conductive type wiring 12 of the wiring sheet 10. In addition, the back electrode type solar battery cell is formed by the conductive adhesive 15 and the insulating adhesive 16 in a state where the second conductivity type electrode 7 is placed on the surface of the second conductivity type wiring 13 of the wiring sheet 10. A solar cell with a wiring sheet having a configuration in which 8 and the wiring sheet 10 are bonded to each other is formed.

  In addition, as the conductive adhesive 15, for example, it has at least electrical conductivity that allows current to flow between adjacent electrodes or between adjacent wirings, and the back electrode type solar cells 8 and the wiring sheet 10 are bonded to each other. Possible ones can be used.

  Moreover, as the insulating adhesive 16, for example, it has at least electrical insulation that does not allow current to flow between adjacent electrodes or between adjacent wirings, and the back electrode type solar cells 8 and the wiring sheet 10 are bonded together. What can be used can be used.

  After that, as shown in FIG. 1, the solar cell with the wiring sheet produced as described above is sealed with ethylene vinyl acetate or the like between the transparent substrate 17 such as a glass substrate and the back film 19 such as a polyester film. An example of the solar cell module of the present invention is produced by sealing in the material 18.

  As described above, in the solar cell module having the configuration shown in FIG. 1, the first conductivity type electrode 6 and the second conductivity type electrode 7 on the back surface of the back electrode type solar cell 8 are each divided into a plurality of pieces. The gap between the adjacent first conductivity type electrodes 6 divided into a plurality and the gap between the adjacent second conductivity type electrodes 7 divided into a plurality are respectively filled with the conductive adhesive 15. .

  Therefore, in the solar cell module having the configuration shown in FIG. 1, an expensive metal such as silver is often used, and the cost is increased by reducing the formation area of the first conductivity type electrode 6 and the second conductivity type electrode 7. In addition to reducing the amount of metal used, the manufacturing cost of the solar cell module can be reduced as compared to the conventional case because the cheap conductive adhesive 15 is used instead of such an expensive metal. Further, by reducing the formation area of the first conductivity type electrode 6 and the second conductivity type electrode 7, the first conductivity type electrode 6 and the second conductivity type electrode 7 and the first conductivity type impurity diffusion region 2. Since the contact area with the second conductivity type impurity diffusion region 3 can be reduced, the contact portion between the first conductivity type electrode 6 and the first conductivity type impurity diffusion region 2 and the second conductivity type electrode 7 Surface recombination of carriers at the contact portion with the second conductivity type impurity diffusion region 3 can be suppressed.

  In the above description, the configuration in which all of the first conductivity type electrode 6 and the second conductivity type electrode 7 are divided into a plurality of parts has been described. However, the first conductivity type electrode 6 and the second conductivity type electrode 7 It is sufficient that at least one is divided into a plurality.

  Further, in the concept of the back electrode type solar cell in the present invention, both the first conductivity type electrode and the second conductivity type electrode are formed only on one surface side (back side) of the semiconductor substrate described above. In addition to the configuration, a so-called back contact type solar cell (solar cell) such as an MWT (Metal Wrap Through) cell (a solar cell having a configuration in which a part of an electrode is disposed in a through hole provided in a semiconductor substrate) All of the solar cells having a structure in which current is taken out from the back surface side opposite to the light receiving surface side.

  In addition, the concept of the solar cell with a wiring sheet in the present invention includes not only a configuration in which a plurality of solar cells are installed on the wiring sheet but also a configuration in which one solar cell is installed on the wiring sheet. Is also included.

<Embodiment 2>
In FIG. 7, typical sectional drawing of another example of the solar cell module of this invention is shown. In the solar cell module having the configuration shown in FIG. 7, one first conductivity type wiring 12 corresponds to a pair (two) of first conductivity type electrodes 6 on the back surface of the back electrode type solar cell 8. The second conductive type wiring 13 corresponds to the pair of (two) second conductive type electrodes 7 on the back surface of the back electrode type solar cell 8.

  Hereinafter, an example of the manufacturing method of the solar cell module having the configuration shown in FIG. 7 will be described. The back electrode type solar cell 8 used in the solar cell module having the configuration shown in FIG. 7 is produced in the same manner as in the first embodiment.

  Moreover, as the wiring sheet 10 used for the solar cell module having the configuration shown in FIG. 7, for example, the one having the configuration shown in the schematic plan view of FIG. 8 is used. Here, in the wiring sheet 10 having the configuration shown in FIG. 8, the width of the first conductivity type wiring 12 is widened compared to the wiring sheet 10 having the configuration shown in FIG. 5 used in the first embodiment. In addition, the width of the second conductivity type wiring 13 is widened.

  The wiring sheet 10 having the configuration shown in FIG. 8 can be manufactured in the same manner as in the first embodiment, for example, except that the shape of the resist pattern 42 shown in FIGS. 4B and 4C is different. it can.

  Thereafter, as shown in the schematic cross-sectional view of FIG. 9A, after applying the conductive adhesive 15 and the insulating adhesive 16 on the surface of the wiring sheet 10 produced as described above, The back electrode type solar cell 8 produced as described above is placed on the wiring sheet 10.

  Thereby, as shown in the schematic cross-sectional view of FIG. 9B, the first conductive type electrode 6 of the back electrode type solar cell 8 is installed on the surface of the first conductive type wiring 12 of the wiring sheet 10. In addition, the conductive adhesive 15 and the insulating adhesive in a state where the second conductive type electrode 7 of the back electrode type solar cell 8 is installed on the surface of the second conductive type wiring 13 of the wiring sheet 10. A solar cell with a wiring sheet having a configuration in which the back electrode type solar cell 8 and the wiring sheet 10 are bonded to each other is formed.

  Here, in the photovoltaic cell with a wiring sheet shown in FIG. 9B, the first conductive type adjacent to the passivation film 4 of the back electrode type solar cell 8 and divided into a plurality of back electrode type solar cells 8. A conductive adhesive 15 is filled in a space surrounded by the first conductive type wiring 12 adjacent to the electrode 6 and the wiring sheet 10.

  Further, the passivation film 4 of the back electrode type solar cell 8, the adjacent second conductivity type electrode 7 divided into a plurality of the back electrode type solar cell 8, and the adjacent second conductivity type wiring 13 of the wiring sheet 10. The space surrounded by the insulating base material 11 of the wiring sheet 10 is also filled with the conductive adhesive 15.

  Further, the passivation film 4 of the back electrode type solar cell 8, the first and second conductivity type electrodes 6 and 7 adjacent to each other in the back electrode type solar cell 8, and the adjacent first conductivity type of the wiring sheet 10. An insulating adhesive 16 is filled in the space surrounded by the insulating base 11 of the wiring 12 and the second conductive type wiring 13 and the wiring sheet 10.

  Thereafter, as shown in FIG. 7, the solar cell with the wiring sheet produced as described above is sealed with a transparent substrate 17 such as a glass substrate and a back film 19 such as a polyester film with ethylene vinyl acetate or the like. An example of the solar cell module of the present invention is produced by sealing in the material 18.

  As described above, also in the solar cell module having the configuration shown in FIG. 7, the first conductivity type electrode 6 and the second conductivity type electrode 7 on the back surface of the back electrode type solar cell 8 are each divided into a plurality of parts. The gap between the adjacent first conductivity type electrodes 6 divided into a plurality and the gap between the adjacent second conductivity type electrodes 7 divided into a plurality are respectively filled with the conductive adhesive 15. .

  Therefore, even in the solar cell module having the configuration shown in FIG. 7, expensive metal such as silver is often used by reducing the formation area of the first conductivity type electrode 6 and the second conductivity type electrode 7. In addition to reducing the amount of metal used, the manufacturing cost of the solar cell module can be reduced as compared to the conventional case because the cheap conductive adhesive 15 is used instead of such an expensive metal. Further, by reducing the formation area of the first conductivity type electrode 6 and the second conductivity type electrode 7, the first conductivity type electrode 6, the second conductivity type electrode 7 and the first conductivity type impurity diffusion region 2 are reduced. Since the contact area with the second conductivity type impurity diffusion region 3 can be reduced, the contact portion between the first conductivity type electrode 6 and the first conductivity type impurity diffusion region 2 and the second conductivity type electrode 7 Surface recombination of carriers at the contact portion with the second conductivity type impurity diffusion region 3 can be suppressed.

  Further, in the solar cell module having the configuration shown in FIG. 7, the width of the first conductive type wiring 12 and the second conductive type wiring 13 of the wiring sheet 10 are compared with the solar cell module having the configuration shown in FIG. 1. Therefore, the stability of the connection between the electrode of the back electrode type solar cell 8 and the wiring of the wiring sheet 10 can be further improved.

  In the above description, the configuration in which all of the first conductivity type wiring 12 and the second conductivity type wiring 13 are divided into a plurality of parts has been described. However, the first conductivity type wiring 12 and the second conductivity type wiring 13 It is sufficient that at least one is divided into a plurality.

  In addition, since the description other than the above in the present embodiment is the same as that in the first embodiment, the description is omitted here.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

The present invention can be utilized wiring sheet with the solar cell and a solar cell module, the solar cell and a solar cell module with a wiring sheet using especially the back contact solar cell.

  DESCRIPTION OF SYMBOLS 1 Semiconductor substrate, 1a Slice damage, 2 1st conductivity type impurity diffusion region, 3nd conductivity type impurity diffusion region, 4 Passivation film, 4a, 4b Contact hole, 5 Antireflection film, 6 1st conductivity type electrode, 7 Second conductive type electrode, 8, 80 Back electrode type solar cell, 10, 100 Wiring sheet, 11 Insulating substrate, 12 First conductive type wiring, 13 Second conductive type wiring, 14 Connection wiring, DESCRIPTION OF SYMBOLS 15 Conductive adhesive agent, 16 Insulating adhesive agent, 17 Transparent substrate, 18 Sealing material, 19 Back film, 41 Conductive layer, 42 Resist pattern, 43 Arrow, 60 1st conductivity type collector electrode, 70 2nd electroconductivity Current collecting electrode for mold.

Claims (5)

Solar cells,
Including a wiring sheet,
The solar battery cell includes a semiconductor substrate on which a first conductivity type impurity diffusion region and a second conductivity type impurity diffusion region are formed, and on one surface side of the semiconductor substrate corresponding to the first conductivity type impurity diffusion region. A first conductivity type electrode provided; and a second conductivity type electrode provided on the one surface side of the semiconductor substrate corresponding to the second conductivity type impurity diffusion region;
The wiring sheet has an insulating base, a first conductive type wiring and a second conductive type wiring installed on the insulating base,
The first conductive type electrode of the solar battery cell is placed in contact with the first conductive type wiring of the wiring sheet;
The second conductive type electrode of the solar battery cell is placed in contact with the second conductive type wiring of the wiring sheet;
Ri Na is divided into a plurality to one of the at least one first conductivity type impurity diffusion region of the first conductivity type electrode,
The divided conductive adhesive in the region between the first conductivity type electrode that has been installed, the solar cell with the interconnection sheet. At least one formed by divided into a plurality for one of the second conductivity type impurity diffusion regions, solar cell with the interconnection sheet according to claim 1 of the previous SL second conductivity type electrode. Wherein the conductive adhesive in the region between the second conductivity type electrode which is pre-Symbol split is installed, the solar cell with the interconnection sheet according to claim 2. Adjacent wherein the insulating adhesive is provided in a region between the first conductivity type electrode and the second conductivity type electrode wiring according to any one of claims 1 to 3 Solar cell with sheet. The solar cell module by which the said photovoltaic cell of the photovoltaic cell with a wiring sheet in any one of Claim 1 to 4 is sealed by the sealing material.

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