KR20150120679A - Chemical cleaning equipment leak repair and reinforcement method - Google Patents

Abstract

The present invention relates to a method for repairing and reinforcing a sink part of a cleaning equipment that is used to clean a semiconductor, LED and LCD. To this end, the present invention comprises; the first reinforcement step(S100) of cleaning the sink part of the cleaning equipment and reinforcing the leakage regions; the second reinforcement step(S200) of forming the lower reinforcing layer with SHT-715(SHT-715A as a subject and SHT-715B as acuring agent) on the bottom surface of the sink part; the third reinforcement step(S300) of forming the middle reinforcing layer with SHT-146(UV Filler Coat) on the upper part of the lower reinforcing layer and sidewalls of the sink part; and the fourth reinforcement step(S400) of forming the upper reinforcing layer with SHT-1500(UV Coat) on the surface of the middle reinforcing layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a chemical cleaning equipment leak repair and reinforcement method,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0002] The present invention relates to a method of reinforcing a sink device leak / repair of a cleaning device used in a semiconductor / LED / LCD cleaning technology.

○ Overview of semiconductor cleaning technology

In recent years, the integration of ULSI fabrication technology has reached the area of several tens of microns. As a result, the storage capacity of DRAM has already entered the age of giga-bit, Is widely studied. Such high integration is not only a two-dimensional reduction due to a reduction in the line width of design technology, but also a development of new materials for various thin films constituting devices represented by a gate insulating film, a multilayer insulating film and wiring materials and capacitors including copper, . For example, in the case of a gate insulating film, which is a typical example of semiconductor integration, the thickness of a thin film is about several tens of angstroms. As a result, the transition to a new high-dielectric film is attempted due to an increase in tunneling current. As semiconductor devices become so highly integrated, the number of manufacturing processes increases, and after each process, many residues or contaminants remain on the surface, and the importance of a cleaning process for removing them is becoming more important. Currently, the semiconductor device manufacturing process has about 400 manufacturing steps, and at least 20% of these processes consist of a cleaning process and a surface treatment process to prevent contamination of wafers. Contaminants generated during the semiconductor device manufacturing process must be removed because it degrades the structural shape of the device and degrades the electrical characteristics thereof, thereby greatly affecting the performance, reliability, and yield of the device.

○ Semiconductor process use Chemical

Semiconductor cleaning chemicals were RCA in the 1970s. (HCM), hydrochloric acid and peroxide mixture (product name: APM: Ammonia Peroxide Mixture / product name: Standard Chemical-1, SC1) and hydrogen peroxide mixture proposed by W. Kern, (Diluted hydrofluoric acid, diluted hydrofluoric acid, D-hydrofluoric acid), buffered oxide etchant (BOE), and organic cleaning chemicals are generally used in addition to the standard chemical-2. Of these, fluorine-based chemicals that do not use hydrogen peroxide are used to remove oxide films.

Ammonia hydrogen peroxide mixture was developed by RCA in USA and used until now. The most important role is to remove particle pollution such as particles, and it has higher efficiency than other chemical solutions. The ratio varies slightly depending on the equipment used and the main application process, but generally ammonia: hydrogen peroxide: water is used in a ratio of 1: 1: 5 to 1: 4: 20, and the temperature is slightly different from 25 ° C to 70 ° C. In the case of ammonia hydrogen peroxide mixed solution, alkali cleaning with high pH is excellent in particle washing ability and can prevent reverse contamination to other wafers and has a feature of etching the wafer surface and converting the surface to hydrophilic property. In order to improve the particle removal performance, a surfactant or the like may be added and used.

Diluted hydrofluoric acid is used in etching processes such as natural oxide removal and is effective for impurity cleaning such as metal contamination except copper. It is usually diluted to a concentration of about 50: 1 to 1000: 1 by mixing with ultrapure water. As a cleaning agent, a combination of dilute hydrofluoric acid for buffering oxide, buffered hydrofluoric acid and ammonia hydrogen peroxide mixture for removing particles is required. For reference, in the removal of metals, diluted hydrofluoric acid, hydrochloric acid hydrogen peroxide mixture or ozone water is used. However, recently, exposure of metal film materials is increased, and acid treatment which does not include hydrogen peroxide, diluted hydrofluoric acid treatment, . Sulfuric acid The hydrogen peroxide mixture solution is a strong acid fire and is a mixture of sulfuric acid and hydrogen peroxide. Typically, it is used to remove the photoresist (PR), and the mechanism is dehydrated by the sulfuric acid and the remnant is reacted and removed by the oxidizing agent hydrogen peroxide. Sulfuric acid is effective in removing organic contamination, but residual sulfur can also cause contamination. In the future, removal of the photoresist solution using a mixture of sulfuric acid and hydrogen peroxide can be replaced by a combination of high concentration ozonated water for some processes. However, in the case of removing the sensitizing solution after metal film etching, inorganic or organic treatment is essential to be.

○ Cleaning process of semiconductor device fabrication

The first cleaning of the semiconductor process is a pretreatment process using an ammonia hydrogen peroxide mixture cleaning solution and ultrasonic cleaning to remove impurities and particles on the silicon surface before depositing the first oxide film using oxygen gas in a high temperature environment of 1000 ° C. or more above the silicon substrate Go ahead. After the first oxide film, a nitride film used as a mask of an active silicon etched polysilicon etching process is deposited, followed by an exposure and a dry etching process.

After the active semiconductor device is cleaned, the dry plasma etching is performed to remove the organic residues by washing the mixed solution of sulfuric acid and hydrogen peroxide and ammonia hydrogen peroxide. When the first oxide film and the mask nitride film are completed on the silicon substrate, the photolithography process is performed on the first oxide film and the mask nitride film. The first photoresist mask, the second nitride film mask, the third silicon nitride film, Substrates are successively etched in a dry plasma using fluorine and chlorine gas. After the dry etching process is completed, organic materials and particles remaining between the surface of the substrate and the pattern are removed using a mixture of sulfuric acid, hydrofluoric acid mixture and ammonia hydrogen peroxide, thereby completing the fabrication of the active semiconductor device.

When the active semiconductor device fabrication process is completed, the process of filling the oxide film for electrical isolation between the patterns is called fine gap isolation, and the oxide film quality region is referred to as a field.

Pull-back cleaning is a cleaning process for pushing the upper mask nitride film into the silicon to improve the hole phenomenon occurring at the triple point of the oxide film when the field oxide film is deposited in the fine gap isolation region, A silicon oxynitride (SiON) deposition process is performed to protect the oxide film boundary and the silicon surface. This silicon oxynitride is called a liner film. However, if there is a particle between the lining silicon oxide film and the active silicon interface, it is difficult to fill the oxide film in the subsequent field region and it may cause a hole in the field oxide film. Therefore, the lining silicon oxide film is pre- A process of removing particles and a natural oxide film on the surface is carried out using a cleaning liquid for a hydrogen peroxide mixture. At this time, the first oxide film on the upper surface of the active silicon is also etched and retreated due to the film-like etching ability of the cleaning liquid, and the degree of the oxide film filling is different according to the degree of etching with the upper mask nitride film . In addition, when the pad oxide film is etched due to the application of the fluorine cleaning liquid and the lower active silicon is exposed, the silicon nitride is grown on the silicon in the subsequent lining deposition process. After that, a low-pressure chemical vapor deposition (CVD) process is used to fill the etched spaces between the active silicon layers. When the chemical mechanical polishing process is performed, the active process, which is a basic substrate structure of the semiconductor transistors, is completed.

At this time, the cleaning before the lining film deposition process proceeds with the combination of the diluted hydrofluoric acid cleaning liquid and the ammonia hydrogen peroxide mixture in order to remove the natural oxide film on the active top and side walls and to remove the impurities on the surface. The pad oxide film between the upper mast nitride films is laterally etched.

Since the cleaning liquid used in the semiconductor cleaning technology includes hydrogen peroxide and hydrofluoric acid which are strong oxidizing agents, there is a problem that the cleaning equipment is corroded and often scattered to the floor of the work, which hinders the working environment.

Patent Registration No. 10-1017102 (Publication date February 25, 2011)

SUMMARY OF THE INVENTION It is an object of the present invention to provide a leakage / maintenance / reinforcement method of a sink portion of a cleaning device, which can repair and reinforce a sink portion of a cleaning device used in a semiconductor / LED / LCD cleaning technology.

The objects of the present invention are not limited to the above-mentioned objects, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

According to another aspect of the present invention, there is provided a method of reinforcing a leak in a sink portion of a semiconductor / LED / LCD cleaning equipment, comprising: a first reinforcing step (S100) of cleaning a sink portion of the cleaning equipment and reinforcing a leakage portion of the sink portion; A second reinforcing step (S200) of forming a lower reinforcing layer with SHT-715 (SHT-715A (subject) + SHT-715B (curing agent)) on the bottom surface of the sink portion; A third reinforcing step (S300) of forming an intermediate reinforcing layer by SHT-146 (UV Filler Coat) on the upper portion of the lower reinforcing layer and the wall surface of the sink portion; And a fourth reinforcing step (S400) of forming an upper reinforcing layer by SHT-1500 (UV Coat) on the surface of the intermediate reinforcing layer (S400). do.

According to the present invention, the problem of connection weakness can be fundamentally solved by a coating agent application method. In other words, it is possible to obtain a perfect sealing effect with the integrated structure with the sink part. It is also reinforced with durability with a combination of high-strength filler and triple-layer coating. That is, quadruple steel structure maximizes the physical / chemical resistance.

In addition, direct application of a high-performance coating agent improves workability and shortens construction time due to ease of use.

1 is a perspective view of an object to which a method of reinforcing and repairing leakage of a sink portion of a semiconductor / LED / LCD cleaning apparatus according to the present invention is applied;
FIGS. 2 to 5 are views schematically showing a procedure of a sink portion leakage / repairing method of semiconductor / LED / LCD cleaning equipment according to the present invention.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of reinforcing leakage and maintenance of a sink portion (100) of a cleaning device (200) used in semiconductor, LED or LCD processes.

The method for leaking and repairing a sink portion 100 of a semiconductor / LED / LCD cleaning apparatus 200 according to the present invention includes the steps of cleaning the sink portion 100 of the cleaning equipment and cleaning the leakage portions 21 and 22 of the sink portion 100 , A first reinforcing step (SlOO) for reinforcing (30) A second reinforcing step S200 of forming a lower reinforcing layer 40 with SHT-715 (SHT-715A (subject) + SHT-715B (curing agent)) on the bottom surface 12 of the sink section 100; A third reinforcing step S300 of forming an intermediate reinforcing layer 50 by SHT-146 (UV Filler Coat) on the upper side of the lower reinforcing layer 40 and the wall surface 11 of the sink 100; And a fourth reinforcing step (S400) of forming an upper reinforcing layer (60) with SHT-1500 (UV Coat) on the surface of the intermediate reinforcing layer (50).

In the leaking water maintenance and reinforcement method, the water leakage reinforcement 30 in the step S100 is characterized by welding, SHT-146 (UV Filler Coat) or SHT-1500 (UV Coat).

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.

Prior to the description, the terms SHT-715 (SHT-715A + SHT-715B), SHT-146 and SHT-1500 used in the present invention are as follows.

1. SHT-715A

end. Product Name / Specification

SHT-715A (Topic) / Eco-friendly sealant filler

I. Recommended use of the product and restrictions on its use

Urethane resin filler

All. Name and content of ingredients

Chemical name A common name tinnitus CAS number contain polyether 폴리올 Polyol 25791-96-2 97.5 Others 2.5

2. SHT-715B

end. Product Name / Specification

SHT-715B (hardener) / environment-friendly sealant filler

I. Recommended use of the product and restrictions on its use

Urethane resin filler

All. Name and content of ingredients

Chemical name A common name tinnitus CAS number contain DiphenylMethaned Diisocyanate MDI 9016-87-9 97 Others 3

3. SHT-146

end. Product Name / Specification

SHT-146 (UV Filler Coat (transparent)) / UV curing Filler coating

I. Name and content of ingredients

4. SHT-1500

end. Product Name / Specification

SHT-1500 (UV Coat (transparent)) / ultraviolet ray curing room temperature dry type coating reinforcing agent

I. Name and content of ingredients

The leakage and repairing method according to the present invention includes a first reinforcing step S100 for cleaning the sink 100 of the cleaning equipment and reinforcing 30 the leakage portions 21, 22, 23, 24 of the sink 100, )Wow; A second reinforcing step S200 of forming a lower reinforcing layer 40 with SHT-715 (SHT-715A (subject) + SHT-715B (curing agent)) on the bottom surface 12 of the sink section 100; A third reinforcing step (S300) of forming an intermediate reinforcing layer (50) by SHT-146 (UV Filler Coat) on the upper side of the lower reinforcing layer (40) and the wall surface (11) of the sink part (100); And a fourth reinforcing step (S400) of forming an upper reinforcing layer (60) with SHT-1500 (UV Coat) on the surface of the intermediate reinforcing layer (50).

Specifically,

"Sink part drying work - Removing existing PATCH, sink part (100) sanding & welding - SHT-1500 or SHT-146 application work - SHT-715 application work - SHT-146 application work - SHT-1500 application work"

Lt; / RTI >

<Drying work of sink part>

1. Remove water in the sink unit 100 by using a clean paper.

2. After removing water, naturally dry for 10 ~ 20 minutes.

&Lt; Existing PATCH removal, sink part (100) sandwich & welding >

1. If there is existing PATCH installed, proceed with removal.

2. Carry out the sanding work on the leakage areas (21, 22, 23, 24).

3. Vacuum hose is connected during sanding to remove foreign matter generated by sanding operation.

4. Proceed with welding at the leakage point (21,22,23,24) & crack point.

<Application of SHT-1500 or SHT-146 (see FIG. 2)>

1. Apply SHT-1500 or SHT-146 after confirming the state of sink part (30).

2. Proceed with hardening of SHT-1500 or SHT-146.

3. Curing time should be about 5 ~ 10 minutes.

<SHT-715 application work>

1. A lower stiffening layer 40 is formed by applying SHT-715 (SHT-715A (subject) + SHT-715B (hardener)) to reinforce secondarily (see FIG.

2. Measure the thickness of the construction using a thickness gauge or steel jig (3 to 5 mm from the bottom surface 12 of the sink 100).

3. Perform natural hardening (about 30 minutes).

<SHT-146 application work>

1. After confirming the state of the sink part 100, an intermediate reinforcing layer 50 is formed by applying SHT-146 (UV Filler Coat) to the upper part of the lower reinforcing layer 40 and the wall surface 11 of the sink part 100, (See Fig. 4).

2. Proceed with hardening of SHT-146.

3. Measure the thickness of the construction using a thickness gauge or steel jig (1 to 3 mm).

4. Curing work time is about 15 minutes.

<SHT-1500 application work>

1. After confirming the state of the sink part 100, the upper stiffening layer 60 is formed on the surface of the intermediate stiffening layer 50 with SHT-1500 (UV Coat) or SHT-146 (UV Filler Coat) 5).

2. Proceed with hardening of SHT-1500.

3. Measure the thickness of the construction using a thickness gauge or steel jig (1 mm).

4. The curing time should be about 15 minutes.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is evident that many alternatives, modifications, and variations will readily occur to those skilled in the art without departing from the spirit and scope of the invention. Therefore, it should be understood that the disclosed embodiments are to be considered in an illustrative rather than a restrictive sense, and that the true scope of the invention is indicated by the appended claims rather than by the foregoing description, and all differences within the scope of equivalents thereof, .

100: sink unit 200: cleaning equipment
11: wall surface 12: bottom surface
21, 22, 23, 24: leakage area 30: reinforcement
40: lower reinforcing layer 50: middle reinforcing layer
60: Upper stiffening layer

Claims (2)

A method of reinforcing leakage / repair of a sink (100) of a semiconductor / LED / LCD cleaning apparatus (200)
A first reinforcing step (S100) of cleaning the sink part (100) of the cleaning equipment and reinforcing (30) the leakage areas (21, 22, 23, 24) of the sink part (100);
A second reinforcing step S200 of forming a lower reinforcing layer 40 with SHT-715 (SHT-715A (subject) + SHT-715B (curing agent)) on the bottom surface 12 of the sink section 100;
A third reinforcing step (S300) of forming an intermediate reinforcing layer (50) by SHT-146 (UV Filler Coat) on the upper side of the lower reinforcing layer (40) and the wall surface (11) of the sink part (100);
A fourth reinforcing step (S400) of forming an upper reinforcing layer (60) with SHT-1500 (UV Coat) on the surface of the intermediate reinforcing layer (50);
LED / LCD cleaning equipment sink part leakage / repairing method.
The method according to claim 1,
The leaking area reinforcement 30 in step S100 is composed of welding, SHT-146 (UV Filler Coat) or SHT-1500 (UV Coat). .

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