KR20150115498A - Nano Beam Scan Exposure - Google Patents

Abstract

The present invention relates to a nano beam scan exposure apparatus, comprising: a mask in contact with a photo resist (PR) and a protective film coated on upper level layers formed on a substrate film; an exposure table on which the upper level layers of the substrate film as well as the mask in contact with the PR and the protective film placed the upper level layer are placed; an optical system for irradiating a line beam on the mask during an exposure; and a light source driving device for scanning and driving the substrate layer and an upper part of the mask while irradiating a line beam from the optical system wherein in a state of making the mask to come into contact with the substrate film, the upper level layers, the PR coated thereon, and the protective film during an exposure, a continuous exposure is performed by scanning a line beam having a nano wavelength while escaping a lower part adhering roller in link with the light source driving device in a lower part of the exposure table in one direction.

Description

Nano Beam Scan Exposure [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an exposure apparatus (Photo Exposure), and more particularly, to a method of forming a circuit pattern by applying a protective film and a photoresist on a substrate, In order to produce necessary wiring and electrodes by using light photosensitivity, Nano Beam Scan Exposure Machine which precisely exposes while scanning using conventional collimation light and scattered light method and Nano Line Light .

Semiconductor manufacturing processes include wafer fabrication and circuit design (stage 1), wafer fabrication (FAB, Fabrication) (stage 2), and wafer chip assembly, ) Process.

Wafer fabrication and circuit design phases consist of single crystal growth, silicon rod cutting, wafer surface polishing, circuit pattern design using a CAD system, and mask or reticle fabrication with a designed circuit pattern.

The wafer fabrication (FAB) fabrication process includes an oxidation process, a photoresist application, an exposure process, a development process, an etching process, an ion implantation process , A chemical vapor deposition (CVD) process, and a metalization process.

The assembling and inspecting steps include chip automatic probe testing, chip sawing, chip attaching, wire bonding, and molding.

The exposure technology used to manufacture the copper-clad wiring in the PCB (Printed Circuit Board) manufacturing technology has been applied to the semiconductor and display fields requiring the micro-pattern.

In the exposure device, a mask on which a circuit pattern is formed is placed on a wafer coated with a photoresist (PR), and a desired circuit pattern is transferred to the photoresist PR by irradiating UV rays Device. The exposure process irradiates light from a light source onto a wafer to generate a photochemical reaction to transfer a mask (or a reticle) pattern onto a photoresist (PR) on the mask. In the exposure, the light of the light source is irradiated to the wafer through the mask, so that a pattern of the portion irradiating the photoresist (the transparent portion of the mask) and the portion not irradiated (the opaque portion of the mask) is formed on the mask . The film quality of the photoresist (PR) is changed by the photochemical reaction at the portion irradiated with light.

Exposure machines are classified as contact exposure, proximity exposure, and projection exposure.

An initially used contact exposure apparatus overlaps a mask on which a pattern is indicated by contacting a wafer coated with a photoresist (PR), and exposes it by irradiating parallel rays. However, since the mask and the wafer are brought into close contact with each other, the particles and the photoresist (PR) on the wafer once transferred to the wafer in the subsequent process.

The proximity exposure apparatus uses a proximity exposure method with a small gap of about 100 μm between the mask and the wafer. Since the wafer and the mask are not in close contact with each other, the system has the effect of reducing transfer defects, Since it is low cost, it is used in LCD, PCB, and MEMS.

The projection exposure apparatus uses a squared projection exposure apparatus and a reduced projection exposure apparatus in such a manner that a light beam passing through a mask is irradiated onto a wafer through a projection lens and exposed.

In order to manufacture a nano pattern, a current exposure machine is performing a multi-layer precision exposure using a reduction projection exposure apparatus among a projection exposure apparatus, and the projection exposure apparatus is also used for a cost of tens to hundreds of millions of expensive semiconductors The cost of purchasing the exposure equipment was too high.

Exposure machines for making PCB wiring or touch screen wiring with a line width of 3 [㎛] or more are mainly composed of an exposure device using collimation light.

In the market situation, in the field of touch screen manufacturing, the size of the screen is enlarged and the display pixel is refined so that it is necessary to make a non-visible wiring which is installed on the front surface of the screen.

In the case of a wiring having a width of 7 mu m which is produced at present because the display pixel is precisely produced, the exposure apparatus is difficult to use due to a moire interference phenomenon which is a screen wave phenomenon.

Therefore, it is necessary to overcome the moiré phenomenon and to develop a process that surpasses the sheet resistance characteristic of ITO (Indium Tin Oxide) which is an irreversible conductive material.

It is a formulated theory that a person can not recognize a wiring if the line width of an optical line width of 1.8 ㎛ or less and the mesh wiring of 300 탆 or more are formed.

In order to respond to the market demand, we are currently trying to implement precise wiring using materials such as Ag paste, Nano wire, and Ni-Cu.

Precision wiring manufacturing method in the semiconductor manufacturing process is a method in which precision molds are formed on rollers, imprinted on a film (FILM), then imprinted with a conductive material, or laser engraved However, a negative (NEGATIVE) method of applying a UV RESIN to a FILM and filling a pattern with an embossed pattern by an exposure process is mainly used.

This equipment is used as essential equipment for mass production and pattern of touch screen. It has a line width of 1.8μm, line spacing of 50μm or more, and a transmittance of 89% or more. Film (FILM) Width 600 [mm] or more, a large-sized exposure machine is in desperate need.

Table 1 shows the characteristics of each fine pattern manufacturing method.

   ITEM productivity  Production method Production COST   Line width   resistance Mass production      Remarks SPUTTERING  GOOD ROLL2ROLL    M 2 to 3 [占 퐉]   50Ω Early Mass Production PR photo UV EMBED  BAD  SHEET    M 5 to 10 [占 퐉] 50 to 100 Ω Early Mass Production Laser Scratch Stamped EMBED  GOOD ROLL2ROLL    L 6 to 10 [占 퐉]   0.5Ω Mass production preparation Roller mold  Electronic printing  BAD ROLL2ROLL    L   10Ω Mass production preparation Offset printing

However, the conventional exposure apparatus used in the semiconductor manufacturing process irradiates the patterns of all the masks to the wafer in one shot in units of chips step by step using parallel light, and in particular, the projection exposure apparatus emits parallel light light has a large optical system and the cost of the expensive equipment of the semiconductor exposure apparatus, which is several tens to several hundreds of millions, has been increased.

It is an object of the present invention to solve the above-described problems and provide a manufacturing method of a semiconductor manufacturing process, in which an optical system such as a metal mesh for a touch screen panel (TSP) The line width of the circuit is about 1.5 to 3 占 퐉 at the time of exposure and in a state in which the mask is in contact with the circuit pattern formed on the substrate and the upper layer and the protective film on the protective film at the time of exposure, (UV beam) in the optical system in line contact while moving the lower contact roller connected with the light source driving device and the roll motion control device to the lower part of the table, and the line width of the circuit is kept at 1.8 탆 or less, And a nano-beam scanning exposure apparatus for continuously exposing a circle while scanning.

In order to accomplish the object of the present invention, a nano-beam scanning exposure apparatus includes: a photoresist (PR, Photo Resist) having a plurality of layers formed on a substrate film; A mask disposed on an upper surface of the protective film; An exposure table on which the substrate film, the protective film, and the mask are mounted; An optical system disposed on the mask at the time of exposure to irradiate a line beam; And an optical system traveling device for traveling the optical system such that a linear light source irradiated by the optical system travels while scanning an upper portion of the mask, wherein an optical system for irradiating the linear light source runs by the light source traveling device, And is exposed while scanning.

The nano-beam scanning exposure apparatus further includes a lower contact roller positioned under the exposure table and operated in conjunction with the light source travel apparatus.

The optical system includes a lamp housing (12) for housing an ultraviolet lamp; A reflection plate 13 formed in a semi-cylindrical shape and reflecting ultraviolet light (UV light); An ultraviolet lamp (UV lamp) 14 for providing ultraviolet rays; A light oil conduit 15 for guiding an ultraviolet (UV) beam light source provided from the ultraviolet lamp 14 to an induction tube; Shutting off the light of the optical pipe (15) and releasing the light, and shutting off the optical source when the exposure is completely completed by the light source driving device; And an optical condensing optical system 17 for converting the light source provided through the optical tube 15 into a source of light.

The optical system further includes a heat-dissipating fan 11 disposed on one side of the upper surface and the other side of the left side of the lamp housing 12 to dissipate heat emitted from the ultraviolet lamp.

And the line width of the circuit at the time of the exposure is about 1.5 to 3 mu m.

In the method of scanning and exposing the linear light source of the nano-wavelength, the substrate film and a plurality of layers formed thereon, a photoresist (PR), a mask on the protective film are brought into contact with each other, Is focused through a lenticular lens and irradiated with a line beam to expose the mask.

The nano-beam scanning exposure apparatus further includes a main body for use in a photometer, an adhesion sensor, an exposure table up / down driving device, a mask, and an up / down driving device for attaching / detaching a protective film.

The nano-beam scanning exposure apparatus includes: a substrate supplier for supplying the substrate film; And a protective film feeder for feeding the mask protective film and regulating the roll tension.

The nano-beam scanning exposure apparatus includes a substrate film winding for rewinding the substrate and the protective film to be introduced into the film roll after the exposure is finished, recovering the exposed substrate by adjusting the roll tension, And a roll movement control device having a protective film winding function by adjusting the roll tension and using a protective film cleaning roller.

The upper and lower driving devices are roll motion control devices that automatically rewind the substrate film and the protective film when exposure is finished and clean the contaminated photoresist PR in the cleaning roller before the automatic rewinding And is reusable.

The nano-beam scanning exposure apparatus according to the present invention includes a photoresist (PR) coated on a substrate, an upper layer, and a protective film in a line width of a circuit of about 1.5 to 3 μm at the time of exposure in a semiconductor manufacturing process, (UV Beam) is irradiated on the mask in a line-contact manner while the lower contact roller interlocked with the light source traveling device and the roll motion control device runs under the unidirectional exposure table in a state in which the mask is in contact with the circuit pattern formed on the mask An exposure apparatus was fabricated in which the line width of the circuit was kept at 1.8 탆 or less, and continuous exposure was performed while scanning a nano-wavelength source.

The exposure equipment is not complicated, and the optical system used in manufacturing the solar cell is not so complicated and relatively inexpensive at several hundreds of millions of Won. The wafer and the mask are contacted to minimize the problem caused by the diffracted light, touch screen.

The nano-beam scanning exposure apparatus of the present invention uses a nano-wavelength optical source scanning method, and the optical system is simpler than the conventional parallel optical system and is not affected by external distortion such as vibration.

An exposure device using a nano-wavelength optical source scan method is used by scanning with a nano-wavelength source using a micro lens. The line width of the circuit is about 1.5 to 3 μm, It is low in irregularity, is used in the manufacture of TSP, LED, and PDP, and the price of exposure machine is hundreds of millions of yuan, and it is expected to realize import substitution effect by implementing exposing equipment at economical price.

1 is a simple configuration diagram of a nano-beam scanning exposure apparatus.
Fig. 2 is a view showing the parts constituting the nano-wavelength source.
FIG. 3 is a diagram comparing the scattered light method, the parallel light method, and the new technology of the nano-wavelength light source scan method of the present invention.
4 and 5 are contact structures of the light source, the mask, the protective film and the substrate upon exposure.
6 is a configuration diagram of an exposure apparatus using a nano-wavelength source scan method.
7 is a photograph showing an example of a fine nickel line width fabricated by implementing the nano-beam scanning exposure apparatus of the present invention.

The objects, features, and advantages of the present invention will become more apparent from the detailed description and the preferred embodiments with reference to the accompanying drawings. In the drawings, the same reference numerals are given to the same components as they are in the drawings, even if they are shown in different drawings. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a simple configuration diagram of a nano-beam scanning exposure apparatus.

The nano-beam scanning exposure apparatus of the present invention comprises a photoresist (PR, Photo Resist) formed on a substrate film and having a plurality of layers formed thereon, and a protective film placed on the photoresist; A mask disposed on an upper surface of the protective film; An exposure table on which the substrate film, the protective film, and the mask are mounted; An optical system disposed on the mask at the time of exposure to irradiate a line beam; And an optical system traveling device for traveling the optical system such that a linear light source irradiated by the optical system travels while scanning an upper portion of the mask, wherein an optical system for irradiating the linear light source runs by the light source traveling device, And is exposed while scanning.

The nano-beam scanning exposure apparatus further includes a lower contact roller positioned under the exposure table and operated in conjunction with the light source travel apparatus.

As shown in FIG. 6, the optical system includes a lamp housing 12 for housing an ultraviolet lamp; A reflection plate 13 formed in a semi-cylindrical shape and reflecting ultraviolet light (UV light); An ultraviolet lamp (UV lamp) 14 for providing ultraviolet rays; A light oil conduit 15 for guiding an ultraviolet (UV) beam light source provided from the ultraviolet lamp 14 to an induction tube; Shutting off the light of the optical pipe (15) and releasing the light, and shutting off the optical source when the exposure is completely completed by the light source driving device; And an optical condensing optical system 17 for converting the light source provided through the optical tube 15 into a source of light.

The optical system further includes a heat-dissipating fan 11 disposed on one side of the upper surface and the other side of the left side of the lamp housing 12 to dissipate heat emitted from the ultraviolet lamp.

And the line width of the circuit at the time of the exposure is about 1.5 to 3 mu m.

In the method of scanning and exposing the linear light source of the nano-wavelength, the substrate film and a plurality of layers formed thereon, a photoresist (PR), a mask on the protective film are brought into contact with each other, Is focused through a lenticular lens and irradiated with a line beam to expose the mask.

The nano-beam scanning exposure apparatus further includes a main body for use in a photometer, an adhesion sensor, an exposure table up / down driving device, a mask, and an up / down driving device for attaching / detaching a protective film.

The nano-beam scanning exposure apparatus includes: a substrate supplier for supplying the substrate film; And a protective film feeder for feeding the mask protective film and regulating the roll tension.

The nano-beam scanning exposure apparatus includes a substrate film winding for rewinding the substrate and the protective film to be introduced into the film roll after the exposure is finished, recovering the exposed substrate by adjusting the roll tension, And a roll movement control device having a protective film winding function by adjusting the roll tension and using a protective film cleaning roller.

The upper and lower driving devices are roll motion control devices that automatically rewind the substrate film and the protective film when exposure is finished and clean the contaminated photoresist PR in the cleaning roller before the automatic rewinding And is reusable.

The optical system further includes a heat-dissipating fan 11 disposed on one side of the upper surface and the other side of the left side of the lamp housing 12 to dissipate heat emitted from the ultraviolet lamp.

In the method of scanning and exposing the linear light source of the nano-wavelength, the substrate film and the upper layers formed thereon, the photoresist (PR), and the photo mask are brought into contact with a mask, and the ultraviolet rays reflected from the ultraviolet lamps (UV Beam) is focused through a lenticular lens and a line beam is irradiated to expose the mask.

The nano-beam scanning exposure apparatus further includes a main body and a mask used as a light amount measuring device, an adhesion sensor, an exposure table up / down driving device, and an up / down driving device for attaching / detaching a protective film.

The nano-beam scanning exposure apparatus includes: a substrate supplier for supplying the substrate film; And a protective film feeder (310) for supplying the mask protective film and regulating the roll tension.

The nano-beam scanning exposure apparatus includes a substrate film winding that rewinds the substrate and the protective film that are introduced into the film roll after exposure and regulates the roll tension to recover the exposed substrate, And a roll movement control device (110, 120) having a protective film winding function using a protective film cleaning roller by adjusting the tension.

Nano Beam Scan Exposure Machine is equipped with anti-vibration and airflow control FFU (FAN FILTER UNIUT); Temperature control device; And an accessory device for performing exposure including a power control device.

Since the accessory device for performing the exposure causes damages to the fine pattern due to vibration, heat, dust of polluted air, etc., the horizontal holding device and the vibration preventing device, and the air purifying device and the exhaust for dissipating the divergent heat of the UV lamp A fan and an exhaust device.

The roll motion control device automatically rewinds the substrate film and the protective film when the exposure is completed and reuses the contaminated photoresist PR in the cleaning roller before the automatic rewinding. do.

The nano-beam scanning exposure apparatus aligns the substrate layer and the mask, and then operates the lower and upper driving tables to operate the mask, the protective film, The substrate is completely brought into close contact with the UV lamp of the optical system and the substrate layer and the mask are run by the light source driving device and the lower contact roller on a contacted contact mask, ) Was exposed on the mask,

When the light source driving apparatus completes the exposure, the shutter is interlocked with the lenticular lens to block the light source and the light amount is closed in a predetermined direction. In the state where the front exposure is finished, the exposure table is opened upward and downward , The protective film and the substrate are automatically transferred by a feeding device.

A nano-beam scanning exposure apparatus according to an exemplary embodiment of the present invention includes a mask having upper layers formed on a substrate film, a photoresist (PR) applied to the upper layer, and a protective film; An exposure table 220 in which upper layers are formed on the substrate film, a photoresist (PR) applied to the upper layer and a mask in contact with the protective film are placed; An optical system for irradiating a line beam on the mask during exposure; A light source traveling device 210 that travels the upper part of the mask while scanning a linear light source of a nanometer wavelength from the optical system, and scans the light;

A protective film feeder (310) for supplying the mask protective film and regulating the roll tension; A substrate feeder 320 for regulating the roll tension to feed the substrate film;

A substrate film winding that recovers the exposed substrate by adjusting the roll tension and rewinding of the substrate film and the protective film that are introduced into the film roll after the exposure is completed, A roll movement control device (120, 110) having a function of winding a protective film using a protective film cleaning roller;

A main frame 230 used as a light amount measuring device, an adhesion sensor, and an exposure table up / down driving device; A top and bottom drive device for masking and attaching and detaching a protective film;

Vibration control and airflow control FFU (Fan FILTER UNIT), temperature control unit, and power control unit.

The Nano Beam Scan Exposure Machine manufactured the exposure equipment at a low cost, relatively few hundreds of millions of Won, while the optical system is not large and complicated when manufacturing the TSP. In the semiconductor manufacturing process, the line width of the circuit is about 1.5 to 3 μm, An optical system that maintains a line width of 1.8 占 퐉 or less and provides a line beam by a lower contact roller that is interlocked with the light source travel device, and an optical system that travels the light source travel device while scanning the nano- An exposure apparatus for continuously exposing the photoresist onto the mask was prepared. Further, the wafer and the mask are brought into contact with each other to minimize the problem caused by the diffracted light.

In a nano-beam scanning exposure apparatus, upper layers are formed on a substrate film at the time of exposure in a semiconductor manufacturing process, and in contact with a photoresist (PR, Photo Resist) applied to the upper layer and a mask A lower contact roller running in conjunction with a light source driving device runs under the unidirectional exposure table, and a UV beam from the UV lamp of the optical system scans a line beam of a nanometer wavelength, Exposure is performed.

1) In the optical system configuration, there are currently scattering optical systems and parallel optical systems in which optical systems used for manufacturing fine patterns are optically coupled with masks.

The scattered light method is difficult to manufacture a precise pattern. Generally, an exposure apparatus is formed by a parallel light method to attach a mask directly to a substrate. However, in the case of a large area, parallel light (Mask) close-coupled type in which a line width of 3 to 7 μm is realized because many additional optical devices are required to obtain the uniformity and intensity of the mask.

In the present invention, in order to simplify an existing complicated optical system, an optical system for concentrating a lenticular lens used as a 3D stereoscopic technique and providing a line beam at the bottom of an ultraviolet lamp (UV lamp) .

As shown in FIG. 2, the basic structure of the present system is composed of parts that provide a source of nano-wavelength light.

The parts that provide the nano-wavelength source are the reflector (1), UV lamp (2), light guide tube (3), lenticular lens (4) And a circle (Nano Line Beam) 5.

The reflector 1 is a semi-cylindrical reflector and reflects ultraviolet light emitted from a UV lamp.

The light guide tube 3 functions as a point light source such as FLY-EYE LENS used in the manufacture of parallel light, and a light spread occurs due to a diffraction phenomenon for a light source having a specific wavelength (λ = 365 nm) And a lenticular lens 4 having the characteristics of a convex lens formed in a row in a line form a parallel focusing light.

The length of the light guide tube 3 and the collecting speed and width of the lenticular lens are designed according to the light source to be used.

The optical system uses a linear beam scanning method of a nanowire with a structure of a line beam, is simple compared to a conventional parallel optical system, and is not affected by external distortion such as vibration.

FIG. 3 is a diagram comparing the scattered light method, the parallel light method, and the new technology of the nano-wavelength light source scan method of the present invention.

In general, the exposure apparatus is in contact, proximity, and projection according to the position of the mask and the substrate. In addition, the projection system with the enlargement / reduction magnification and the contact system (CONTACT) The contact can increase the performance of exposure in order to reduce the diffraction of the light passing through the mask in the parallel light source of the light source, but usually the proximity (PROXIMITY) due to contamination of the substrate and mask surface I am using it.

The scattered light method is used to manufacture a PCB with a line width of about 80 μm by directly irradiating the UV Lamp light. When the mirror surface is irregular due to irregular reflection, light interference is large and the exposure apparatus is comparatively inexpensive.

The parallel light method uses parallel light using a reflector (reflective mirror), and the line width of the circuit is about 7 μm. It is used for manufacturing LCD, PDP, SEMI, LED, TSP and irregular photosensitive surface In the case of a mirror-type substrate, light interference is large. In a parallel light type projection exposure system, an optical system is large and complicated, and tens or hundreds of billions of expensive equipments are required.

In order to simplify a complicated optical system, the nano-wavelength optical source scan method of the present invention is used to manufacture an optical system that concentrates a lenticular lens, which is one of 3D stereoscopic technologies, in the optical system to provide a linear light source of a line beam structure The light source driving device is driven by scanning a line beam from an optical system, and is scanned by a lower contact roller to continuously expose the mask on the mask.

The exposure apparatus using the nano-wavelength optical source scan method according to the present invention is used by scanning with a nano-wavelength source using a micro lens. The line width of the circuit is about 1.5 to 3 μm, (TSP), LED (Light Emitting Diode) and PDP (Plasma Display Panel), and the price of the exposure machine is hundreds of millions of Won, which is comparatively economical.

The exposure table is a work table for causing the substrate layer coated with the photoresist (PR) used as a photosensitive agent to closely contact with a mask to scan and run the exposure light source.

4 and 5 are contact structures of the light source, the mask, the protective film and the substrate upon exposure.

In the present invention, a protective film is driven on a surface of a mask such that a roller is interlocked with a light source driving device attached to a lower portion of a unidirectional exposure table for supplying a protective film that is not contaminated at all times.

4A is a view showing the limit of the resolution of the contact exposure and the collimation beam.

For example, a circuit pattern (black portion) is formed on a substrate, a copper layer, a photoresist (PR), and a protective film, and a photo mask And irradiated with ultraviolet rays (UV Beam) by an optical system. The contact exposure system is advantageous in that there is no damage to the mask, low resolution, difficulty in adjusting the mask uniformity interval, difficulty in alignment of materials and mask flatness, and difficulty in automatic alignment and half shadow region.

As shown in FIG. 5, the nano-beam scanning exposure apparatus of the present invention includes a substrate, a copper layer, a photo resist, a circuit pattern (black (UV) beam from the ultraviolet lamps of the line structure of the optical system is attached to the lower part of the exposure table in a state in which a photo mask is adhered thereon, ) Is scanned with a source of light of a nano wavelength, and a continuous exposure is performed on the mask.

6 is a configuration diagram of an exposure apparatus using a nano-wavelength source scan method.

The optical system (12-17) includes a lamp housing (12) for housing an ultraviolet lamp; A reflection plate 13 formed in a semi-cylindrical shape and reflecting ultraviolet light (UV light); An ultraviolet lamp (UV lamp) 14 for providing ultraviolet rays; A light oil conduit 15 for guiding an ultraviolet (UV) beam light source provided from the ultraviolet lamp 14 to an induction tube; Shutting off the light of the optical pipe (15) and releasing the light, and shutting off the optical source when the exposure is completely completed by the light source driving device; And a light focusing optical system (17) for making the light source provided through the optical tube (15) a source of light,

The optical system further includes an exhaust fan (heat-dissipating fan) 11 disposed on one side of the upper surface and the other side of the left side of the lamp housing 12 to dissipate heat emitted from the ultraviolet lamp.

The optical system stopped at the initial position generates a line beam while the ultraviolet light source of the ultraviolet lamps of the line beam structure is turned on and continuously exposes the mask while scanning the light source traveling apparatus.

In the method of scanning and exposing the linear light source of the nano-wavelength, the substrate film and the upper layers formed thereon, the photoresist (PR), and the photo mask are brought into contact with a mask, and the ultraviolet rays reflected from the ultraviolet lamps (UV Beam) is focused through a lenticular lens and a line beam is irradiated to expose the mask.

The roll motion control device is a device applied when a substrate to be exposed is a film type.

After the linear light source is scanned with the substrate layer and the mask in the form of a line beam and the exposure is completed, the roll motion control device rewinds the substrate and the protective film, which are fed into the film roll, A substrate film winding for regulating the roll tension to recover the exposed substrate, and a protective film winding function using a protective film cleaning roller by adjusting the roll tension.

The roll movement control device for supplying the protective film to the upper part of the substrate is automatically rewound when the exposure of the substrate and the protective film supplied from the substrate and the protective film feeder is completed, roller, the contaminated photoresist PR can be cleaned and reused.

Since the accessories that perform exposure cause damage to the pattern due to vibration, heat, dust of polluted air, etc., it is necessary to use the horizontal holding device and anti-vibration measures, heat dissipation heat of the air purifying device and ultraviolet lamp And an exhaust fan for exhausting the exhaust gas.

According to the present embodiment, when the substrate and the mask for exposure are fabricated in a size of 1: 1 and the protective film and the substrate are supplied to the exposure table with a mask size to be exposed, alignment of the substrate and the mask is confirmed, The upper and lower table portions are operated to completely close the mask, the protective film, and the substrate.

An ultraviolet light source is generated by turning on a nano-ray light source device of an ultra-violet lamp configured in the form of a line beam of an optical system stopped at an initial position.

At this time, a light amount meter is operated to measure the quality of the light source, and it is inspected whether the light source output is generated according to the sensitivity of the photoresist (PR) applied to the substrate layer and the stacked thickness including the substrate.

When the quality of the light quantity becomes the quality required for exposure of the substrate, the optical system travels the mask upper part at regular intervals by the linear servo apparatus of the light source traveling apparatus installed on the equipment, and when the mask enters the mask, It is possible to maintain strong close contact with the line contact by a roller for lower contact running running in conjunction with the underneath of the running of the one which is opened while being opened.

When the light source driving apparatus 210 completes the exposure, the light shutter, which is a light source interrupter interlocked with the lenticular lens, closes the light amount in a predetermined direction.

With the front exposure completed, the exposure table is opened up and down, and the protective film and the substrate are automatically transferred by the roll feeding device.

In the repetitive operation, the operation order is the same except that the start position of the upper light source is different.

In order to obtain a fine line width of 1.8 ㎛ or less, the design of a precise lenticular lens and the length of a light source wavelength (= 365 nm) induction tube should be determined in hardware, and the quality should be maintained in the PHOTO RESIST Coating thickness management is very important.

FIG. 7 is a photograph showing an example of a fine nickel line width fabricated by implementing the apparatus of the nano-beam scanning exposure apparatus of the present invention.

Substrate: 100 mu m PET FILM,

Wiring layer: 350 ° A Front deposition

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken in conjunction with the present invention. The present invention can be variously modified or modified.

11: FAN for heat dissipation
12: Lamp Housing
13: UV Light reflector
14: UV lamp (UV lamp)
15: Light guide tube
16: optical shutter
17: Light focusing system (lenticular type)

Claims (10)

A photoresist (PR, Photo Resist) having a plurality of layers formed on a substrate film and applied to an upper layer of the plurality of layers, and a protective film placed on the photoresist;
A mask disposed on an upper surface of the protective film;
An exposure table on which the substrate film, the protective film, and the mask are mounted;
An optical system disposed on the mask at the time of exposure to irradiate a line beam; And
And an optical system traveling device that travels the optical system so that a linear light source irradiated by the optical system travels while scanning an upper portion of the mask,
Wherein an optical system for irradiating the linear light source travels by the light source travel device and exposes the linear light source while scanning the linear light source. The method according to claim 1,
And a lower contact roller disposed under the exposure table and operated in conjunction with the light source travel device. The method according to claim 1,
The optical system
A lamp housing (11) for housing an ultraviolet lamp;
A reflection plate 13 formed in a semi-cylindrical shape and reflecting ultraviolet light (UV light);
An ultraviolet lamp (UV lamp) 14 for providing ultraviolet rays;
A light oil conduit 15 for guiding an ultraviolet (UV) beam light source provided from the ultraviolet lamp 14 to an induction tube;
Shutting off the light of the optical pipe (15) and releasing the light, and shutting off the optical source when the exposure is completely completed by the light source driving device; And
A light focusing optical system 17 for making the light source provided through the optical tube 15 a source of light;
/ RTI > scan beam exposure apparatus. The method of claim 3,
The optical system
Further comprising a heat dissipating fan (11) disposed on one side of the upper surface and the other side of the left side of the lamp housing (12) to dissipate heat emitted from the ultraviolet lamp. The method according to claim 1,
Wherein the line width of the circuit during the exposure is about 1.5 to 3 占 퐉. The method according to claim 1 or 3,
In the method of scanning and exposing the linear light source of the nano-wavelength, the substrate film and a plurality of layers formed thereon, a photoresist (PR), a mask on the protective film are brought into contact with each other, Is focused through a lenticular lens and irradiated with a line beam to expose the mask to the mask. The method according to claim 1,
A nano-beam scanning exposure apparatus further comprising: a main frame used as a light intensity meter, an adhesion sensor, an exposure table up / down driving device, a mask, and an upper and a lower driving device for attaching and detaching a protective film. The method according to claim 1,
A substrate feeder for supplying the substrate film; And
Further comprising a protective film feeder for feeding said mask protective film and regulating roll tension. The method according to claim 1,
After the exposure is completed, a substrate film winding that rewinds the substrate and the protective film that are fed with a film roll, adjusts the roll tension to recover the exposed substrate, and adjusts the roll tension Further comprising a roll motion control device having a protective film winding function using a protective film cleaning roller. 8. The method of claim 7,
The upper and lower driving devices are roll motion control devices that automatically rewind the substrate film and the protective film when exposure is finished and clean the contaminated photoresist PR in the cleaning roller before the automatic rewinding Wherein the nano-beam scanning exposure apparatus is capable of being reused.

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