KR20150075984A - Mask for forming organic layer, method for fabricating the same and method for fabricating flexible organic luminescence emitted diode device using the same - Google Patents

Abstract

The present invention relates to a mask for forming an organic layer, a method for fabricating the mask, and a method for fabricating a flexible organic electroluminescent device using the mask, wherein the mask comprises: a transparent substrate; and mask patterns consisting of at least two patterns which are formed on an edge portion of a non-display area on the mask substrate and whose widths are narrower from lower portions to upper portions.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a mask for forming an organic film, a method of manufacturing the same, and a flexible organic light emitting diode manufacturing method using the same. BACKGROUND ART [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light emitting diode (OLED) device, and more particularly to an OLED display device capable of preventing an erroneous operation of a driving circuit due to external light, Mask, a method of manufacturing the same, and a method of manufacturing a flexible organic electroluminescent device using the same.

An organic electroluminescent device, which is one of a flat panel display (FPD), has a high luminance and a low operating voltage characteristic, and is self-emitting type that emits light by itself. Therefore, it has a large contrast ratio, And the response time is as short as several microseconds (μs), the moving sphere is easy, the viewing angle is unlimited, stable at low temperatures, and driven by a low voltage of 5 to 15 V DC, making it easy to manufacture and design a driving circuit .

In addition, the fabrication process of the organic electroluminescent device is very simple because it is a deposition process and an encapsulation process.

An organic electroluminescent device having such characteristics is largely divided into a passive matrix type and a matrix type. In the passive matrix type, a scan line and a signal line cross each other to form a matrix type device. In order to drive the scanning lines in order to drive the scanning lines sequentially, it is necessary to give an instantaneous luminance equal to the average luminance multiplied by the number of lines in order to obtain the required average luminance.

However, in the active matrix method, a thin film transistor (TFT), which is a switching element for turning on / off a pixel region, is disposed for each pixel region, and a driving thin film transistor A power supply line, and an organic light emitting diode, and is formed for each pixel region.

At this time, the first electrode connected to the driving thin film transistor is turned on / off in units of a pixel region, and the second electrode facing the first electrode serves as a common electrode, Thereby forming the organic electroluminescent diode.

In the active matrix method having such a characteristic, the voltage applied to the pixel region is charged in the storage capacitor Cst, and power is applied until the next frame signal is applied. Thus, Continue to run during the screen.

Accordingly, since the same luminance is exhibited even when a low current is applied, an active matrix type organic electroluminescent device is mainly used since it has advantages of low power consumption, high definition and large size.

The basic structure and operational characteristics of such an active matrix type organic electroluminescent device will be described with reference to the drawings.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a schematic circuit diagram of one pixel region of a general active matrix organic electroluminescent device. FIG.

1, one pixel region of a general active matrix organic electroluminescent device includes a switching thin film transistor STr, a driving thin film transistor DTr, a storage capacitor Cst, and an organic light emitting diode E .

A gate line GL is formed in a first direction and a second direction intersecting the first direction to define a pixel region P together with the gate line GL and a data line DL is formed And a power supply line PL for applying a power supply voltage is formed at a distance from the data line DL.

A switching thin film transistor STr is formed at the intersection of the data line DL and the gate line GL and is electrically connected to the switching thin film transistor STr in each pixel region P A driving thin film transistor DTr is formed.

At this time, the driving thin film transistor DTr is electrically connected to the organic light emitting diode E. That is, the first electrode, which is one terminal of the organic electroluminescent diode E, is connected to the drain electrode of the driving thin film transistor DTr, and the second electrode, which is the other terminal, is connected to the power supply line PL. At this time, the power supply line (PL) transfers the power supply voltage to the organic light emitting diode (E). A storage capacitor Cst is formed between the gate electrode and the source electrode of the driving thin film transistor DTr.

Therefore, when a signal is applied through the gate line GL, the switching thin film transistor STr is turned on and the signal of the data line DL is transmitted to the gate electrode of the driving thin film transistor DTr, The thin film transistor DTr is turned on so that light is output through the organic light emitting diode E. At this time, when the driving thin film transistor DTr is turned on, a level of a current flowing from the power supply line PL to the organic light emitting diode E is determined. Accordingly, the organic light emitting diode E A gray scale can be implemented.

The storage capacitor Cst serves to keep the gate voltage of the driving thin film transistor DTr constant when the switching thin film transistor STr is turned off so that the switching thin film transistor STr is turned off the level of the current flowing through the organic electroluminescent diode E can be maintained constant until the next frame even if the off state is established.

2 is a cross-sectional view schematically showing an organic electroluminescent device according to the prior art.

2, a display area AA is defined on a substrate 11 of a conventional organic electroluminescent device 10, and a non-display area NA is defined outside the display area AA The display area AA is provided with a plurality of pixel areas P defined by a gate line (not shown) and a data line (not shown), and the data line (not shown) And a power supply wiring (not shown) is provided side by side.

A switching thin film transistor (not shown) and a driving thin film transistor DTr are formed in the plurality of pixel regions P, respectively.

The organic electroluminescent device 10 according to the related art is encapsulated with a protective film (not shown) on the substrate 11 on which the driving thin film transistor DTr and the organic electroluminescent device E are formed.

2, a display area AA is defined on a substrate 11, and a non-display area AA is formed outside the display area AA. An area NA is defined and a plurality of pixel areas P defined by a gate wiring (not shown) and a data wiring (not shown) are formed in the display area AA, Power wiring (not shown) is provided in parallel with the data wiring (not shown).

A plurality of switching thin film transistors STr and driving thin film transistors DTr are formed in the display area AA and a switching transistor (not shown) is formed on the substrate 11 in the non-display area NA. A driving circuit is formed.

The switching thin film transistor (not shown) and the driving transistor DTr have the same structure. Although not shown in the drawing, a semiconductor layer (not shown) formed of first, second and third regions (not shown) A gate electrode (not shown) formed on a gate insulating film (not shown) on the semiconductor layer (not shown) and an interlayer insulating film (not shown) formed on the gate insulating film including the gate electrode (Not shown) and a drain electrode (not shown) spaced apart from each other.

On the other hand, a drain contact hole (not shown) for exposing the drain electrode 23b of the driving thin film transistor DTr is formed on the driving thin film transistor DTr and the switching thin film transistor (not shown) ) And a planarization film 15 are laminated on the interlayer insulation film 13 and the planarization film 15, respectively.

The planarization layer 15 is formed on the planarization layer 15. The planarization layer 15 is in contact with a drain electrode (not shown) of the driving thin film transistor DTr through the drain contact hole (not shown) A first electrode 19, which is an anode, is formed.

On the first electrode 19, a bank 21 for separating and forming each pixel region P is formed. At this time, the banks 21 are disposed between adjacent pixel regions P. The bank 21 is formed not only between adjacent pixel regions P but also a portion 21 thereof in a panel outer frame portion, that is, a non-display region NA.

An organic light emitting layer 23 composed of an organic light emitting pattern (not shown) emitting red, green and blue light is formed on the first electrode 19 in each pixel region P surrounded by the bank 21 .

A second electrode 25 which is a cathode is formed on the entire surface of the display region AA on the organic light emitting layer 23 and the bank 21. The organic light emitting layer 23 interposed between the first electrode 21 and the second electrode 25 and the two electrodes 21 and 25 constitutes an organic light emitting diode E. In this case, driving circuits are disposed in the non-display area (NA), for example, a bezel area. The first electrode 21, the organic light emitting layer 23, and the second electrode 25, Is not formed.

On the front surface of the substrate including the second electrode 25, a first passivation film 27 is formed as an insulating film for preventing moisture permeation.

An organic film 29 made of a polymer organic material such as a polymer is formed on the display area AA on the first passivation film 27. [ At this time, an etch-top 29a having a convex shape is formed on the outer edge of the organic film 29 as shown in "A" in FIG.

A second passivation film 31 is additionally formed on the first passivation film 27 including the organic film 29 to prevent moisture from penetrating through the organic film 29.

A barrier film (not shown) for preventing encapsulation and upper moisture permeation of the organic light emitting diode E is formed on the entire surface of the substrate including the second passivation film 31 (PSA) (hereinafter referred to as PSA) (not shown) is sandwiched between the substrate 11 and the protective film (not shown) and the substrate 11 and the protective film And they are in close contact with each other. At this time, the second passivation film 39, the adhesive (not shown), and the protective film (not shown) have a face seal structure.

The substrate 11 and the barrier film (not shown) are fixed by a pressure-sensitive adhesive (not shown) to form a panel state, thereby forming the organic electroluminescent device 10 according to the prior art.

A method of forming an organic layer at the time of manufacturing an organic electroluminescent device according to the related art having the above structure will be described with reference to FIGS. 3A to 3D.

FIGS. 3A to 3D are process cross-sectional views schematically illustrating a method of forming an organic layer in the fabrication of an organic electroluminescent device according to the prior art.

3A, a thin film transistor (not shown) and an organic light emitting diode E are formed on a substrate 20, and then a first passivation film 27 is formed on the organic light emitting diode E .

Next, referring to FIG. 3B, a screen mask 41 having a rectangular mask pattern 43 is disposed on the first passivation film 27. At this time, an organic electroluminescent element formation region is defined between the mask patterns 43 of the screen mask 41, and the mask pattern 43 is formed of a mask oil.

Referring to FIG. 3C, a polymer is applied between the mask patterns 43 of the screen mask 41, followed by curing to form an organic layer 53. At this time, the center portion of the organic film 53 is coated with a flat thin film, but the edge portion of the organic film 53 generates a surface tension and an adhesive force with the side surface of the mask pattern 43, edge-top (53a).

3D, the screen mask 41 is moved upward and separated from the organic film 53 to form the edge-top 53a on the edge of the organic film 53a, Remains as it is.

As described above, according to the conventional method of manufacturing an organic electroluminescent device, when a polymer is coated on a substrate using a screen mask having a rectangular mask pattern, the polymer film in contact with the mask pattern A surface tension and an adhesive force are generated at the edge portion, and a convex edge tower 53a is formed.

Accordingly, since the edge tower 53a formed at the edge of the polymer film is applied in the same shape as a planar convex lens, the portion coated with the flat thin film and the image formed by the reflection and transmission of the surface are observed with the naked eye Resulting in poor appearance quality.

SUMMARY OF THE INVENTION It is an object of the present invention to minimize the contact between a polymer film and a mask pattern of a screen mask so that the surface tension between the mask pattern and the polymer film and the edge- And a method for fabricating the flexible organic electroluminescent device using the mask. The present invention also provides a method of manufacturing a flexible organic electroluminescent device using the same.

According to another aspect of the present invention, there is provided a method of fabricating a flexible organic electroluminescent device including: providing a substrate having a display region including a plurality of pixel regions and a non-display region defined outside the display region; Forming a plurality of thin film transistors in each pixel region and a non-display region on the substrate; Forming a planarizing film on the entire surface of the substrate including the thin film transistors; Forming a first electrode on the planarization layer, the first electrode being connected to the thin film transistor in the display region; Forming a pixel defining layer around each pixel region of the substrate including the first electrode; Forming an organic light emitting layer for each pixel region on the first electrode; Forming a second electrode over the entire display area of the substrate including the organic light emitting layer; Forming a first passivation film on the entire surface of the substrate including the second electrode; A step of depositing a pattern having two or more patterns having different pattern widths on the first passivation film outside the non-display area, and disposing a mask having a mask pattern having a pattern having a small pattern width at the bottom ; Applying a polymer between the at least two mask patterns to form an organic film on the first passivation film; Separating the screen mask from an edge of the organic film; And forming a second passivation film on the organic layer.

According to an aspect of the present invention, there is provided an organic film formation mask comprising: a transparent mask substrate; And a mask pattern formed on an outer portion of the non-display region on the mask substrate, the mask pattern comprising at least two patterns having a narrower pattern width toward the upper side.

According to an aspect of the present invention, there is provided a method of manufacturing a mask for forming an organic film, comprising: forming a mask pattern layer by applying a masking agent on a transparent mask substrate; And exposing the mask pattern layer using at least two or more exposure masks and developing the mask pattern to form a mask pattern having patterns corresponding to the at least two or more patterns and having different pattern widths .

A mask for forming an organic film, a method of manufacturing the same, and a method of manufacturing a flexible organic electroluminescent device according to the present invention are characterized in that in the step of forming an organic film for particle compensation between multiple passivation films at the time of manufacturing a flexible organic electroluminescent device, It is possible to minimize the contact between the organic film and the mask patterns by applying a mask or a trapezoidal mask in which at least two mask patterns having different pattern widths are laminated so that the surface tension and the adhesive force of the side contact between the organic film and the mask pattern It is possible to minimize the edge-top of the convex shape which has occurred in the outer edge portion of the existing organic film.

 Therefore, in the mask for forming an organic film, the method of manufacturing the same, and the method of manufacturing a flexible organic electroluminescent device according to the present invention, the surface tension between the mask pattern and the organic film is eliminated, Since only the tension exists, the effect of the convex shape of the edge tower is improved by about 50% or more.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a schematic circuit diagram of one pixel region of a general active matrix organic electroluminescent device. FIG.
2 is a schematic cross-sectional view of an organic electroluminescent device according to the prior art.
FIGS. 3A to 3D are process cross-sectional views schematically illustrating a method of forming an organic layer in the fabrication of an organic electroluminescent device according to the prior art.
4 is a schematic cross-sectional view of an organic electroluminescent device according to the present invention.
5A to 5K are cross-sectional views illustrating an organic electroluminescent device according to the present invention.
6A to 6H are cross-sectional views of a mask manufacturing process applied to the formation of an organic film in the fabrication of an organic electroluminescent device according to the present invention.
7A to 7C are process cross-sectional views for schematically explaining a method of manufacturing an organic layer at the time of manufacturing an organic electroluminescent device according to the present invention.
FIGS. 8A to 8D are cross-sectional views schematically illustrating a method of manufacturing an organic film using another embodiment of the organic film-forming mask in the fabrication of the organic electroluminescent device according to the present invention.

Hereinafter, a flexible organic electroluminescent device according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

The organic electroluminescent device according to the present invention is divided into a top emission type and a bottom emission type according to the transmission direction of emitted light. would.

4 is a schematic cross-sectional view of an organic electroluminescent device according to the present invention.

4, an organic electroluminescent device 100 according to the present invention includes a substrate 101 on which a plurality of driving thin film transistors DTr and switching thin film transistors (not shown) and a plurality of organic light emitting devices E are formed And is encapsulated by a protective film 137.

4, the organic electroluminescent device 100 according to the present invention includes a substrate 101 having a display area AA including a plurality of pixel areas P and a non-display area NA defined outside the display area AA )and; A switching thin film transistor (not shown) and a driving thin film transistor DTr formed in the respective pixel regions P on the substrate 101; A planarization layer 115 formed on the entire surface of the substrate 101 including the switching thin film transistor and the driving thin film transistor DTr; A first electrode 121 formed on the planarization film 115 and connected to the drain electrode 113b of the driving TFT DTr; A pixel defining layer 125 formed around each pixel region P of the substrate including the first electrode 121; An organic emission layer 127 separated and formed on the first electrode 121 for each pixel region P; A second electrode 129 formed on the entire surface of the substrate including the organic light emitting layer 127; A first passivation film 131 formed on the entire surface of the substrate including the second electrode 129; A flat organic film 153 formed on the first passivation film 131 and having an edge top minimized on a surface of an outer edge portion located in a non-display region; And a second passivation film 155 formed on the organic film 153.

4, a display area AA is defined on the substrate 101, and a ratio of a ratio of the width of the display area AA to the width of the display area AA A display region NA is defined and the display region AA is provided with a plurality of pixel regions P defined as regions captured by gate wirings (not shown) and data wirings (not shown) (Not shown) is provided in parallel with the data line (not shown).

A plurality of switching thin film transistors (not shown) and driving thin film transistors DTr are formed in the display area AA. In the non-display area NA of the substrate 101, And driver circuits including thin film transistors (not shown) are formed.

As the substrate 101, a glass substrate or a flexible substrate can be used. As a flexible substrate, a flexible organic electroluminescent device (OLED) has a flexible characteristic so that display performance can be maintained even if the flexible organic electroluminescent device It is made of flexible glass substrate or plastic material.

A buffer layer (not shown) made of silicon oxide (SiO ₂ ) or silicon nitride (SiNx), which is an inorganic insulating material, is formed on the substrate 101. The reason why the buffer layer (not shown) is formed under the semiconductor layer 103 formed in the subsequent process is that the buffer layer (not shown) is formed by the release of the alkali ions from the inside of the substrate 101 during crystallization of the semiconductor layer 103 So as to prevent the characteristics of the semiconductor layer 103 from deteriorating.

Each pixel region P in the display region AA above the buffer layer (not shown) is made of pure polysilicon corresponding to the driving region (not shown) and the switching region (not shown) A semiconductor layer 103 composed of a first region 103c constituting a channel and second and third regions 103a and 103b doped with impurities at a high concentration on both sides of the first region 103c are formed.

A gate insulating layer 105 is formed on the buffer layer including the semiconductor layer 103. The gate insulating layer 105 is formed on the semiconductor layers 103 (not shown) in the driving region The gate electrode 107 is formed in correspondence to the first region 103c of the gate electrode 107a.

The gate insulating film 105 is connected to the gate electrode 107 formed in the switching region (not shown) and extends in one direction to form a gate wiring (not shown). At this time, the gate electrode 107 and the gate wiring (not shown) may be formed of a first metal material having a low resistance property such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum Mo, and moly titanium (MoTi), and may have a single layer structure, or may be formed of two or more of the first metal materials to have a double layer structure or a triple layer structure. In the drawing, the gate electrode 107 and the gate wiring (not shown) have a single layer structure.

On the other hand, an interlayer insulating film (not shown) made of silicon oxide (SiO ₂ ) or silicon nitride (SiN x), which is an inorganic insulating material, is formed on the entire display region of the substrate including the gate electrode 107 and gate wiring 109 are formed. At this time, the second and third regions 103a and 103b located on both sides of the first region 103c of the semiconductor layer 103 are exposed in the interlayer insulating film 109 and the gate insulating film 105 below the interlayer insulating film 109, A semiconductor layer contact hole (not shown) is provided.

An upper portion of the interlayer insulating film 109 including the semiconductor layer contact hole (not shown) intersects the gate line (not shown), defines the pixel region P, and a second metal material, for example, aluminum (Not shown) made of any one or more of Al, Al alloy, AlNd, Cu, a copper alloy, molybdenum, moly titanium, chromium, And power supply wiring (not shown) is formed therebetween. At this time, the power supply wiring (not shown) may be formed on the layer on which the gate wiring (not shown) is formed, that is, on the gate insulating film 105 and spaced apart from the gate wiring (not shown).

The second and third regions 103a and 103b, which are spaced apart from each other and exposed through the semiconductor layer contact hole (not shown), are formed in respective driving regions (not shown) and switching regions (not shown) on the interlayer insulating film 109, And a source electrode 113a and a drain electrode 113b made of the same second metal material as the data line (not shown) are formed. At this time, the semiconductor layer 103, the gate insulating film 105, the gate electrode 107, and the interlayer insulating film 109 which are sequentially stacked in the switching region (not shown) and the driving region (not shown) The source electrode 113a and the drain electrode 113b constitute a driving thin film transistor DTr.

Although the data line (not shown) and the source electrode 113a and the drain electrode 113b both have a single-layer structure in the figure, these components may have a double layer structure or a triple layer structure have.

Although not shown in the figure, a switching thin film transistor (not shown) having the same layer structure as the driving thin film transistor DTr is also formed in the switching region (not shown). At this time, the switching thin film transistor (not shown) is electrically connected to the driving thin film transistor DTr, the gate wiring (not shown) and the data wiring 113. That is, the gate wiring (not shown) and the data wiring (not shown) are respectively connected to a gate electrode (not shown) and a source electrode (not shown) of the switching thin film transistor A drain electrode (not shown) of the TFT is electrically connected to a gate electrode 107 of the driving thin film transistor DTr.

Although the driving thin film transistor DTr and the switching thin film transistor (not shown) have a polysilicon semiconductor layer 103 and are configured as a top gate type, the driving switching thin film transistor DTr and the switching thin film transistor (DTr) and a switching thin film transistor (not shown) may be composed of a bottom gate type having a semiconductor layer of amorphous silicon.

When the driving thin film transistor DTr and the switching thin film transistor (not shown) are formed of a bottom gate type, the laminated structure is separated from the active layer of the gate electrode / the gate insulating film / the pure amorphous silicon and the ohmic contact of the impurity amorphous silicon And a source electrode and a drain electrode which are separated from each other. At this time, the gate wiring is formed to be connected to the gate electrode of the switching thin film transistor in the layer where the gate electrode is formed, and the data wiring is formed to be connected to the source electrode in the layer in which the source electrode of the switching thin film transistor is formed.

On the other hand, a flattening film 115 is formed on the entire surface of the substrate including the driving thin film transistor DTr and the switching thin film transistor (not shown) in the display area AA. The planarization layer 115 may be formed of an insulating material such as an inorganic insulating material containing silicon oxide (SiO ₂ ) and silicon nitride (SiN x), or an organic insulating material containing photo- Any one of the materials may be selected and used. On the other hand, it can be used as an opaque organic insulating material among the organic insulating materials. In the present invention, a planarizing film 115 is formed using an organic insulating material will be described as an example.

A first electrode 121 formed in a subsequent process is formed on a planarization film 115 corresponding to a display region of the substrate 101 with a drain contact hole (not shown) for electrically contacting the drain electrode 113b, 119 of Fig. 5D) is formed.

The planarization layer 115 is in contact with the drain electrode 113b of the driving thin film transistor DTr through the drain contact hole (see 119 in FIG. 5D) The first electrode 121 is formed.

In addition, an insulating material, for example, benzocyclobutene (BCB), polyimide, or photoelectrode is formed on the first electrode 121 at the boundary of each pixel region P and in the non- A pixel defining layer 125 made of a photo acryl is formed. In this case, the pixel defining layer 125 is formed so as to overlap the rim of the first electrode 121 surrounding the pixel region P, and a lattice having a plurality of openings as a whole in the display region AA . In addition, the pixel defining layer 125 is also formed in the non-display area NA, which is the outer edge of the panel.

On the first electrode 121 in each pixel region P surrounded by the pixel defining layer 125, an organic light emitting layer 127 composed of organic light emitting patterns (not shown) emitting red, green, Respectively. The organic light emitting layer 127 may be formed of a single layer made of an organic light emitting material, or may include a hole injection layer, a hole transporting layer, a light emitting material layer an emitting material layer, an electron transporting layer, and an electron injection layer.

A second electrode 129 is formed on the display area AA of the substrate including the organic light emitting layer 127 and the pixel defining layer 125. The organic light emitting layer 125 interposed between the first electrode 121 and the second electrode 129 and between the two electrodes 121 and 129 constitutes an organic light emitting diode E.

Therefore, when a predetermined voltage is applied to the first electrode 121 and the second electrode 129 according to a selected color signal, the organic light emitting diode E generates a positive voltage, which is injected from the first electrode 121, Electrons provided from the electrode 129 are transported to the organic light emitting layer 127 to form an exciton. When the exciton transitions from the excited state to the ground state, light is emitted and emitted as visible light. At this time, since the emitted light passes through the transparent second electrode 129 and exits to the outside, the organic electroluminescent device 100 realizes an arbitrary image.

A first passivation film 131 made of silicon oxide (SiO ₂ ) or silicon nitride (SiNx), which is an inorganic insulating material, is formed on the entire surface of the substrate including the second electrode 129. Since the second electrode 129 can not completely inhibit moisture penetration into the organic emission layer 127, the first passivation layer 131 is formed on the second electrode 129, It is possible to completely suppress moisture infiltration into the water tank 129.

Further, a screen mask (not shown) having a mask pattern (not shown in FIG. 6A, not shown) having two or more patterns with different pattern widths is formed on the first passivation film 131 outside the non- An edge-top (not shown) is minimized on the outer edge portion B by applying the organic material 141 and the organic film 133 made of a polymer organic substance such as a polymer. As the polymer thin film that constitutes the organic layer 133, an olefin-based polymer such as polyethylene, polypropylene, polyethylene terephthalate (PET), epoxy resin, fluoro resin, polysiloxane ) May be used.

In order to prevent water from penetrating through the organic film 133, an insulating material, for example, silicon oxide (SiO2), which is an inorganic insulating material, is formed on the entire surface of the substrate including the organic film 133 and the first passivation film 131 SiO ₂ ) or silicon nitride (SiN x) is further formed on the second passivation film 135.

Although not shown in the drawing, a protective film (not shown) is covered on the entire surface of the substrate including the second passivation film 135 for encapsulation of the organic light emitting diode E, (Not shown) made of any one of frit, organic insulating material and high molecular material having transparency and adhesive property between the film (not shown) and the substrate 101 and the barrier film Is completely in close contact with the case. At this time, in the present invention, PSA (Press Sensitive Adhesive) is used as the pressure sensitive adhesive (not shown) as an example.

The substrate 101 and the barrier film (not shown) are fixed by a pressure-sensitive adhesive (not shown) to form a panel state, thereby forming the organic electroluminescent device 100 according to the present invention.

A method of fabricating a flexible organic electroluminescent device according to the present invention will now be described with reference to FIGS. 5A to 5K.

5A to 5K are cross-sectional views illustrating an organic electroluminescent device according to the present invention.

As shown in FIG. 5A, a substrate 101 in which a display area AA and a non-display area NA are defined outside the display area AA is prepared. Here, the substrate 101 may be a glass substrate or a flexible substrate. The flexible substrate may be a flexible substrate such as a flexible organic electroluminescent device (OLED) And is made of a flexible glass substrate or a plastic material.

Next, a buffer layer (not shown) made of silicon oxide (SiO ₂ ) or silicon nitride (SiN x), which is an inorganic insulating material, is formed on the substrate 101. The reason why the buffer layer (not shown) is formed under the semiconductor layer 103 formed in the subsequent process is that the buffer layer (not shown) is formed by the release of the alkali ions from the inside of the substrate 101 during crystallization of the semiconductor layer 103 So as to prevent the characteristics of the semiconductor layer 103 from deteriorating.

Subsequently, in each of the pixel regions P in the display region AA on the buffer layer (not shown) corresponding to the driving circuit portions (not shown), the switching regions (not shown) and the non-display regions NA A central region of which is composed of pure polysilicon and includes a first region 103c constituting a channel and second and third regions 103a and 103b doped with impurities at high concentration on both sides of the first region 103c. Layer 103 is formed.

Next, a gate insulating film 105 is formed on the buffer layer including the semiconductor layer 103 and a driving region (not shown), a switching region (not shown) and a non-display region (not shown) are formed on the gate insulating film 105 The gate electrodes 107 are formed corresponding to the first regions 103c of the respective semiconductor layers 103 in the driving circuit portion of the semiconductor layers 103,

The gate insulating film 105 is connected to the gate electrode 107 formed in the switching region (not shown) and extends in one direction to form a gate wiring (not shown). At this time, the gate electrode 107 and the gate wiring (not shown) may be formed of a first metal material having a low resistance property such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum Mo, and moly titanium (MoTi), and may have a single layer structure, or may be formed of two or more of the first metal materials to have a double layer structure or a triple layer structure. In the drawing, the gate electrode 107 and the gate wiring (not shown) have a single layer structure.

Next, as shown in Figure 5b, the gate electrode 107 and the gate wiring insulating the substrate surface including the (not shown) materials, such as inorganic insulating material is silicon oxide (SiO ₂₎ or silicon nitride (SiNx Is formed on the insulating film 109. [

Next, the insulating film 109 and the gate insulating film 105 under the gate insulating film 105 are selectively patterned so that the respective portions of the second and third regions 103a and 103b located on both sides of the first region 103c of each semiconductor layer The semiconductor layer contact holes 111a and 111b are formed.

Then, although not shown in the drawing, a metal (not shown) which intersects a gate wiring (not shown) on the interlayer insulating film 109 including the semiconductor layer contact holes 111a and 111b, To form a material layer (not shown). At this time, the metal material layer (not shown) may be formed of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum, molybdenum, molybdenum, chromium, Or a combination thereof.

Then, a data wiring (not shown) and a data driving circuit wiring (not shown) are formed to selectively pattern the metal material layer (not shown) to cross the gate wiring (not shown) And a power supply wiring (not shown) is formed therebetween. At this time, the power supply wiring (not shown) may be formed on the layer on which the gate wiring (not shown) is formed, that is, on the gate insulating film so as to be spaced apart from the gate wiring (not shown).

In the formation of the data line (not shown), the insulating film 109 is separated from the driving circuit portions (not shown) and the driving circuit portions of the switching region (not shown) and the non-display region (NA) A source electrode 113a and a drain electrode 113b which are in contact with the second regions 103a and 103b exposed through the layer contact holes 111a and 111b and made of the same metal material as the data line (not shown) At the same time. At this time, the source electrode 113a and the source electrode 113a, which are formed separately from the semiconductor layer 103, the gate insulating film 105, the gate electrode 107, and the interlayer insulating film 109 sequentially stacked in the driving region (not shown) The drain electrode 113b forms a driving thin film transistor DTr.

Although the data line (not shown) and the source electrode 113a and the drain electrode 113b both have a single-layer structure in the figure, these components may have a double layer structure or a triple layer structure have.

At this time, a switching thin film transistor (not shown) having the same lamination structure as the driving thin film transistor DTr is formed in the driving circuit portion of the switching region (not shown) and the non-display region NA of the display region AA . At this time, a switching thin film transistor (not shown) of the display area NA is electrically connected to the driving thin film transistor DTr, the gate wiring (not shown) and the data wiring 113. That is, the gate wiring (not shown) and the data wiring (not shown) are respectively connected to a gate electrode (not shown) and a source electrode (not shown) of the switching thin film transistor A drain electrode (not shown) of the TFT is electrically connected to a gate electrode 107 of the driving thin film transistor DTr.

The switching thin film transistor STr of the driving thin film transistor DTr and the switching thin film transistor (not shown) and the non-display area NA has the polysilicon semiconductor layer 103 and the top gate type The driving thin film transistor DTr and the switching thin film transistor (not shown) may be formed of a bottom gate type having a semiconductor layer of amorphous silicon.

When the driving thin film transistor DTr and the switching thin film transistor (not shown) are formed of a bottom gate type, the laminated structure is separated from the active layer of the gate electrode / the gate insulating film / the pure amorphous silicon and the ohmic contact of the impurity amorphous silicon And a source electrode and a drain electrode which are spaced apart from each other. At this time, the gate wiring is formed to be connected to the gate electrode of the switching thin film transistor in the layer where the gate electrode is formed, and the data wiring is formed to be connected to the source electrode in the layer in which the source electrode of the switching thin film transistor is formed.

5C, a switching thin film transistor DTr and a switching thin film transistor (not shown) and a switching thin film transistor (not shown) in a driving circuit portion of a non-display region NA are formed on a flattening film 115 ). The planarization layer 115 may be formed of an insulating material such as an inorganic insulating material including silicon oxide (SiO ₂ ) and silicon nitride (SiN x), or an organic insulating material containing photo- Any one of the insulating materials may be selected and used. In the present invention, a planarizing film 113 is formed using an organic insulating material will be described as an example. Meanwhile, the planarization layer 115 may be formed of an opaque organic insulating material to shield external light.

5D, the planarizing film 115 is subjected to an exposure and development process and then selectively patterned to form a planarization film 115 corresponding to a display region of the substrate 101 in a subsequent process (Not shown in FIG. 5E, not shown) forms a drain contact hole 119 for electrically contacting the drain electrode 113b. 5E, a metal material layer (not shown) is deposited on the entire surface of the substrate including the planarization film 115, and then the metal material layer is selectively patterned, The first electrode 121 is in contact with the drain electrode 113b of the driving thin film transistor DTr through the drain contact hole 119 and has a separate shape for each pixel region P. At this time, the metal material layer (not shown) may be formed of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum, molybdenum, molybdenum, chromium, Or a combination thereof.

5F, an insulating material, for example, benzocyclobutene (BCB), polyimide, and the like are formed on the first electrode 121 in the boundary of each pixel region P and in the non-display region NA. A pixel defining layer 125 made of polyimide or photo acryl is formed. In this case, the pixel defining layer 125 is formed so as to overlap the rim of the first electrode 121 surrounding the pixel region P, and a lattice having a plurality of openings as a whole in the display region AA . In addition, the pixel defining layer 125 is also formed in the non-display area NA, which is the outer edge of the panel.

5G, an organic light emitting pattern (not shown) for emitting red, green, and blue light is formed on the first electrode 121 in each pixel region P surrounded by the pixel defining layer 125, The organic emission layer 127 is formed. The organic light emitting layer 127 may be formed of a single layer made of an organic light emitting material, or may include a hole injection layer, a hole transporting layer, a light emitting material layer an emitting material layer, an electron transporting layer, and an electron injection layer.

5H, a transparent conductive material layer (not shown) made of any one of transparent conductive materials including, for example, ITO and IZO is formed on the entire surface of the substrate including the organic emission layer 127 and the pixel defining layer 125 A second electrode 129 is formed on the display area AA of the substrate including the organic light emitting layer 127 and the pixel defining layer 125. [ The organic light emitting layer 127 interposed between the first electrode 121 and the second electrode 129 and between the two electrodes 121 and 129 constitutes an organic light emitting diode E.

Therefore, when a predetermined voltage is applied to the first electrode 121 and the second electrode 129 according to a selected color signal, the organic light emitting diode E generates a positive voltage, which is injected from the first electrode 121, Electrons provided from the electrode 129 are transported to the organic light emitting layer 127 to form an exciton. When the exciton transitions from the excited state to the ground state, light is emitted and emitted as visible light. At this time, since the emitted light passes through the transparent second electrode 129 and exits to the outside, the organic electroluminescent device 100 realizes an arbitrary image.

Then, as shown in Figure 5i, the second electrode 129 for containing a substrate over an insulating material, in particular the first passivation made of inorganic insulating material is silicon oxide (SiO ₂₎ or silicon nitride (SiNx) film ( 131). Since the second electrode 129 can not completely inhibit moisture penetration into the organic emission layer 127, the first passivation layer 131 is formed on the second electrode 129, It is possible to completely inhibit the penetration of moisture into the heat exchanger 127.

Next, although not shown in the drawing, a stepwise mask (not shown) consisting of at least two patterns (see 143a, 143b, 143c and 143c in FIG. 6h, not shown) having different pattern widths is formed on the first passivation film 131 By applying a mask (see 140 in FIG. 6H, not shown) in which a pattern (see 143 in FIG. 6H) is formed, the central portion and the peripheral edge portion B are flat And an organic film 133 made of a polymer organic material such as a polymer is formed.

A method of manufacturing the mask 140 used for forming the organic layer 133 will be described with reference to FIGS. 6A to 6H.

6A to 6H are cross-sectional views of a mask manufacturing process applied to the formation of an organic film in the fabrication of an organic electroluminescent device according to the present invention.

Referring to FIG. 6A, a masking agent layer is coated on a transparent mask substrate 141 to form a mask pattern layer 142. At this time, an acrylic resin, a urethane resin, or a fluorine resin having a low cohesive strength is used as the mask oil.

Next, a first exposure mask 145 is disposed on the mask pattern layer 142. The first exposure mask 145 includes a transmissive portion 145a and a light intercepting portion 145b. The transmissive portion 145a corresponds to a display region composed of a plurality of pixel regions, and the light intercepting portion 145b Is located corresponding to the outer frame portion of the non-display area.

6B, ultraviolet light is irradiated to the mask pattern layer 142 through the first exposure mask 145 for a predetermined period of time and then developed to form a first pattern 143a having a first width . At this time, the ultraviolet light may be irradiated for a predetermined time or the light amount may be adjusted to a certain level.

Next, referring to FIG. 6C, the first exposure mask 145 is removed, and a second exposure mask 147 having diffraction characteristics is disposed above the first pattern 143a. The second exposure mask 147 is composed of a transmissive portion 147a, a light intercepting portion 147b and a transflective portion 147c. The transmissive portion 147a is located corresponding to a display region composed of a plurality of pixel regions , The light shielding portion 147b and the transflective portion 147c are located on the upper side of the first pattern 143a located in the outer portion of the non-display region. The second exposure mask 147 uses a slit mask or a half-tone mask having diffraction characteristics. Here, a case where a slit mask is used will be described as an example.

Referring to FIG. 6D, ultraviolet light is irradiated to the first pattern 143a through the second exposure mask 147, and then developed to form a second pattern 143b. At this time, the width of the second pattern 143b is wider than the width of the first pattern 143a. Also, the ultraviolet light may be irradiated for a shorter period of time in the formation of the first pattern 143a or by using a small amount of light.

6E, after the second exposure mask 147 is removed, a third exposure mask 149 is disposed above the first and second patterns 143a and 143b. The third exposure mask 149 is composed of a transmissive portion 149a, a light intercepting portion 149b and a transflective portion 149c. The transmissive portion 149a corresponds to a display region composed of a plurality of pixel regions And the light blocking portion 149b and the transflective portion 149c are located corresponding to the outer frame portion of the non-display region. The light shielding portion 149b is located corresponding to a part of the second pattern 143b including the first pattern 143a.

In this case, the third exposure mask 149 uses a slit mask or a half-tone mask having diffraction characteristics. Here, a case using a slit mask will be described as an example.

Referring to FIG. 6F, ultraviolet light is irradiated to the second pattern 143b through the third exposure mask 149, and then developed to form a third pattern 143c. At this time, the width of the third pattern 143c is wider than the width of the second pattern 143b. In addition, the ultraviolet light may be irradiated for a shorter time in the formation of the second pattern 143b, or may be irradiated using a small amount of light.

6G, after the third exposure mask 149 is removed, a fourth exposure mask 151 is disposed on the first, second, and third patterns 143a, 143b, and 143c. The fourth exposure mask 151 includes a transmissive portion 151a, a light intercepting portion 151b and a transflective portion 151c. The transmissive portion 151a corresponds to a display region composed of a plurality of pixel regions, The light shielding portion 151b and the transflective portion 151c are located corresponding to the outer frame portion of the non-display region. The light shielding portion 151b is located corresponding to a part of the third pattern 143c including the first and second patterns 143a and 143b. The fourth exposure mask 151 uses a slit mask or a half-tone mask having diffraction characteristics. Here, a case where a slit mask is used will be described as an example.

6H, ultraviolet light is irradiated to the third pattern 143c through the fourth exposure mask 151 and then developed to form a fourth pattern 143d. At this time, the width of the fourth pattern 143d is wider than the width of the third pattern 143c. In addition, the ultraviolet light may be irradiated for a shorter time in the formation of the third pattern 143c or by using a small amount of light.

In this way, a mask pattern 143 having at least two patterns, for example, the first, second, third and fourth patterns 143a, 143b, 143c and 143d is formed on the mask substrate 141 (140). At this time, the mask pattern 143 includes the first, second, third, and fourth patterns 143a, 143b, 143c, and 143d having different widths.

As described above, in the present invention, the mask pattern 143 composed of the first, second, third, and fourth patterns 143a, 143b, 143c, and 143d having different pattern widths, The mask pattern 143 is not limited to the first, second, third, and fourth patterns 143a, 143b, 143c, and 143d, but may be formed with more patterns depending on the case. That is, when the mask pattern is formed of a plurality of patterns or more as in the case of the other embodiment of the present invention shown in FIG. 8, the mask pattern may be formed in a trapezoidal shape.

A process of forming the organic layer 153 using the mask 140 manufactured as described above will be described with reference to FIGS. 7A to 7C.

FIGS. 7A to 7C are cross-sectional views illustrating a method of forming an organic layer at the time of manufacturing an organic electroluminescent device according to the present invention.

7A, first, a thin film transistor (not shown) and an organic light emitting diode E are formed on a substrate 101, and then a first passivation film 131 is formed on the organic light emitting diode E .

Next, a stepwise mask pattern 143 composed of at least two first, second, third and fourth patterns 143a, 143b, 143c and 143d having different pattern widths is formed on the first passivation film 131 A mask (mask) 140 is disposed. At this time, an organic electroluminescent element formation region is defined between the mask patterns 143 of the mask 140, and the mask pattern 143 is formed of mask oil. At this time, an acrylic resin, a urethane resin, or a fluorine resin having a low cohesive strength is used as the mask oil.

The pattern 143a having the smallest pattern width among the at least two first, second, third and fourth patterns 143a, 143b, 143c, and 143d having the different pattern widths is positioned at the bottom, (131).

7B, a first passivation layer 143 is formed between the mask patterns 143 having at least two first, second, third and fourth patterns 143a, 143b, 143c and 143d having different pattern widths. A polymer is coated on the film 131 and then cured to form an organic film 153. As the polymer thin film constituting the organic layer 153, an olefin-based polymer such as polyethylene, polypropylene, polyethylene terephthalate (PET), epoxy resin, fluoro resin, polysiloxane, Can be used.

The outer edge portion of the organic film 153 may be formed on the side surface of the mask pattern 143, for example, the first and second patterns 143a and 143b, (Not shown) of a convex shape due to the surface tension and the adhesive force of the mask pattern 143. The mask pattern 143 has first and second patterns 143a and 143b so that the surface area of the outer edge portion of the organic film 153 in contact with the first and second patterns 143a and 143b is reduced accordingly.

The first and second patterns 143a and 143b of the mask pattern 143 are formed on the first and second patterns 143a and 143b, The edge-top (not shown) of the outer edge portion of the organic film 153 is minimized by minimizing the surface tension and adhesion between the organic film 153 and the organic film 153.

7C, the mask 140 is moved upward to separate the mask pattern 143 from the outer edge of the organic film 153, so that the edges of the organic film 153 are formed with edges An edge-top (not shown) is minimized, so that the front surface of the organic film 153, that is, the central portion and the wavy edge portion, has a flat surface.

5K, after the organic layer 153 is formed as described above, the organic layer 153 is formed on the entire surface of the substrate including the organic layer 153 and the first passivation layer 131, over material to be isolated to prevent moisture penetration, for example to form the second passivation film 155 made of a silicon oxide inorganic insulating material (SiO ₂₎ or silicon nitride (SiNx).

A protective film (not shown) is then coated on the entire surface of the substrate including the second passivation film 155 for encapsulation of the organic light emitting diode E. The substrate 101 and the protective film The substrate 101 and the protective film (not shown) are completely bonded to each other through an adhesive (not shown) made of any one of frit, organic insulating material, . At this time, in the present invention, PSA (Press Sensitive Adhesive) is used as the pressure sensitive adhesive (not shown) as an example.

The substrate 101 and the barrier film (not shown) are fixed by a pressure-sensitive adhesive (not shown) to form a panel state.

As described above, the method of manufacturing a flexible organic electroluminescent device using the mask for forming an organic film according to the present invention is characterized in that particles are formed between the first and second passivation films 131 and 155, It is possible to minimize the contact area between the organic film and the mask patterns by applying a mask in which a mask pattern composed of at least two or more patterns having different pattern widths in a stepwise pattern is formed on the mask in the step of forming the compensation organic film, By minimizing the surface tension and adhesive force of the side contact between the film and the mask pattern, it is possible to minimize the edge-top of the convex shape that has occurred in the edge portion of the existing organic film.

 Therefore, in the flexible organic electroluminescent device manufacturing method using the organic film-forming mask according to the present invention, the surface tension at the side between the mask pattern and the organic film is lost, and only the surface tension between the air and the organic film So that the convex edge tower can be improved by about 50% compared to the conventional one.

A method of manufacturing an organic film using a mask according to another embodiment of the present invention will be described with reference to FIGS. 8A to 8D.

FIGS. 8A to 8D are cross-sectional views schematically illustrating a method of manufacturing an organic film using another embodiment of the organic film-forming mask in the fabrication of the organic electroluminescent device according to the present invention.

8A, a transparent mask substrate 241 and a mask 240 (not shown) formed on the outer portion of a non-display area on the mask substrate 241 and composed of a mask pattern 243 having a narrower pattern width toward the upper side ). At this time, the mask pattern 243 having a narrower pattern width toward the upper side is formed in a trapezoidal shape having inclined side faces. The trapezoidal mask pattern 243 can be obtained by repeating the steps of applying the masking agent a plurality of times or performing exposure and development using a plurality of exposure masks, as shown in FIG.

8B, a thin film transistor (not shown) and an organic light emitting diode E are formed on a substrate 201 and then a first passivation film 231 is formed on the organic light emitting diode E .

Then, the mask 240 having an inclined trapezoidal mask pattern 243 having a narrow pattern width is formed on the first passivation film 231 toward the upper side. At this time, an organic electroluminescent element formation region is defined between the mask patterns 243 of the mask 240, and the mask pattern 243 is formed of a mask oil. At this time, an acrylic resin, a urethane resin, or a fluorine resin having a low cohesive strength is used as the mask oil.

Further, the portion of the mask pattern 243 having the smallest pattern width is brought into contact with the first passivation film 231.

Next, referring to FIG. 8C, a polymer is applied between the inclined trapezoidal mask patterns 243 and then cured to form an organic layer 253. As the polymer thin film constituting the organic layer 253, an organic polymer such as an olefin-based polymer (poly-ethylene, polypropylene), polyethylene terephthalate (PET), epoxy resin, fluoro resin, polysiloxane ) May be used.

The peripheral portion of the organic film 253 may have a surface tension and an adhesive force with the lower side surface of the mask pattern 243 to form a convex edge, The mask pattern 243 is formed so as to have a gradually narrower pattern width as it goes downward, and the organic film (not shown) contacting the lower side of the mask pattern 243 The surface area of the outer edge portion of each of the first and second end portions 253 and 253 is reduced accordingly.

As a result, the surface area of the outer edge portion of the organic film 253, which is in contact with the lower side surface portion of the mask pattern 243, The edge-top (not shown) of the outer edge portion of the organic film 253 is minimized by minimizing the surface tension and the adhesive force of the organic film 253.

8D, the mask 240 is moved upward to separate the mask pattern 243 from the outer edge of the organic film 253, so that the edge of the organic film 253 is formed with an edge An edge-top (not shown) is minimized so that the entire surface of the organic film 253 has a flat surface.

After the organic film 253 is formed as described above, although not shown in the drawing, the entire surface of the substrate including the organic film 253 and the first passivation film 231 is exposed to moisture in order to prevents the penetration of insulating material, for example, to form an additional second passivation film (not shown) made of a silicon oxide inorganic insulating material (SiO ₂₎ or silicon nitride (SiNx).

A protective film (not shown) is then coated on the entire surface of the substrate including the second passivation film (not shown) for encapsulation of the organic light emitting diode E. The protective film (not shown) The substrate (not shown) and the protective film (not shown) are completely bonded to each other through an adhesive (not shown) made of any one of frit, organic insulating material, Tightly. At this time, in the present invention, PSA (Press Sensitive Adhesive) is used as the pressure sensitive adhesive (not shown) as an example.

The substrate 101 and the barrier film (not shown) are fixed by a pressure-sensitive adhesive (not shown) to form a panel state.

As described above, according to the flexible organic electroluminescent device manufacturing method of the present invention, in the process of forming the organic film for particle compensation between the multiple passivation films at the time of manufacturing the flexible organic electroluminescent device, the stepwise or trapezoidal mask By minimizing the contact area between the organic film and the mask patterns by minimizing the surface tension and adhesion of the side contact between the organic film and the mask pattern by applying the mask having the pattern, The edge-top of the device can be minimized.

 Therefore, since the surface tension between the mask pattern and the organic film is eliminated, and only the surface tension between the air and the organic film is present, the convex edge tower is improved by about 50% Can be obtained.

It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof.

It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

101: substrate 103: semiconductor layer
103c: first regions 103a, 103b: second and third regions 105: gate insulating film 107: gate electrode 109: interlayer insulating film 113a: source electrode
113b: drain electrode 115: planarization film
119: drain contact hole 121: first electrode
123: light blocking film pattern 125: pixel defining film 127: organic light emitting layer 129: second electrode 131: first passivation film 140: mask
141: mask substrate 143: mask pattern
143a, 143b, 143c and 143d: first, second, third and fourth patterns
145, 147, 149, and 151: first, second, third, and fourth exposure masks
153: organic film 155: second passivation film
AA: display area NA: non-display area P: pixel area

Claims (17)

Providing a substrate on which a display region including a plurality of pixel regions and a non-display region on the outer side thereof are defined;
Forming a plurality of thin film transistors in each pixel region and a non-display region on the substrate;
Forming a planarizing film on the entire surface of the substrate including the thin film transistors;
Forming a first electrode on the planarization layer, the first electrode being connected to the thin film transistor in the display region;
Forming a pixel defining layer around each pixel region of the substrate including the first electrode; Forming an organic light emitting layer for each pixel region on the first electrode;
Forming a second electrode over the entire display area of the substrate including the organic light emitting layer;
Forming a first passivation film on the entire surface of the substrate including the second electrode;
Disposing a mask having a mask pattern having two or more patterns having different pattern widths on the first passivation film outside the non-display region;
Applying a polymer between the at least two mask patterns to form an organic film on the first passivation film;
Separating the screen mask from an edge of the organic film; And
And forming a second passivation film on the organic layer. The method of manufacturing a flexible organic electroluminescent device according to claim 1, wherein the mask comprises a step pattern or a trapezoidal mask pattern. 3. The method of claim 2, wherein the stepwise mask pattern comprises a plurality of patterns having a narrower pattern width toward the upper side. The manufacturing method of a flexible organic electroluminescent device according to claim 2, wherein the trapezoidal mask pattern has a narrower pattern width toward the upper side. The manufacturing method of a flexible organic electroluminescent device according to claim 1, wherein the mask pattern is formed of an acrylic resin, a urethane resin, or a fluorine resin having a low cohesive force. The method according to claim 1, wherein a portion of the mask pattern having a narrow pattern width is brought into contact with the first passivation film. A transparent mask substrate;
And a mask pattern formed on an outer frame portion of the non-display region on the mask substrate, the mask pattern comprising at least two patterns having a narrower pattern width toward the upper side. The organic film-forming mask according to claim 7, wherein the mask pattern has a stepped shape or a trapezoidal shape. The organic film formation mask according to claim 8, wherein the stepwise mask pattern comprises at least two or more patterns having a narrower pattern width toward the upper side. The organic film forming mask according to claim 8, wherein the trapezoidal mask pattern has a narrower pattern width toward the upper side. The organic film-forming mask according to claim 7, wherein the mask pattern is formed of an acrylic resin, a urethane resin, or a fluorine resin having a low cohesive force. Forming a mask pattern layer by applying a masking agent on a transparent mask substrate;
And exposing the mask pattern layer using at least two or more exposure masks and developing the mask pattern to form a mask pattern having patterns corresponding to the at least two or more patterns and having different pattern widths A method for manufacturing a mask for forming an organic film. 13. The method of claim 12, wherein the mask pattern has a stepped shape or a trapezoidal shape. 14. The method according to claim 13, wherein the stepwise mask pattern comprises at least two or more patterns having a narrower pattern width toward the upper side. 14. The method of claim 13, wherein the trapezoidal mask pattern has a narrower pattern width toward the upper side. The method for manufacturing an organic film-forming mask according to claim 12, wherein the mask pattern is formed of an acrylic resin, a urethane resin, or a fluorine resin having a low cohesive force. 13. The method according to claim 12, wherein the plurality of exposure masks include a diffraction mask.

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