KR20150075367A - 표시 장치 및 전자 기기 - Google Patents

표시 장치 및 전자 기기 Download PDF

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Publication number
KR20150075367A
KR20150075367A KR1020140182669A KR20140182669A KR20150075367A KR 20150075367 A KR20150075367 A KR 20150075367A KR 1020140182669 A KR1020140182669 A KR 1020140182669A KR 20140182669 A KR20140182669 A KR 20140182669A KR 20150075367 A KR20150075367 A KR 20150075367A
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South Korea
Prior art keywords
substrate
display device
layer
display
electrode
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Korean (ko)
Inventor
타쿠야 카와타
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20150075367A publication Critical patent/KR20150075367A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020140182669A 2013-12-25 2014-12-17 표시 장치 및 전자 기기 Ceased KR20150075367A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013267177 2013-12-25
JPJP-P-2013-267177 2013-12-25

Publications (1)

Publication Number Publication Date
KR20150075367A true KR20150075367A (ko) 2015-07-03

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KR1020140182669A Ceased KR20150075367A (ko) 2013-12-25 2014-12-17 표시 장치 및 전자 기기

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US (2) US9356246B2 (https=)
JP (2) JP2015143846A (https=)
KR (1) KR20150075367A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
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KR20190035919A (ko) * 2016-08-23 2019-04-03 쓰리엠 이노베이티브 프로퍼티즈 컴파니 일반화된 층 기계적 적합성을 가진 폴더블 디스플레이 설계
US12432865B2 (en) 2021-10-07 2025-09-30 Samsung Display Co., Ltd. Foldable electronic device including support layer including reinforcement fiber

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KR20150021000A (ko) 2013-08-19 2015-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9229481B2 (en) 2013-12-20 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150075367A (ko) * 2013-12-25 2015-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
KR102435833B1 (ko) 2014-02-28 2022-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자 기기
JP6515537B2 (ja) * 2014-04-08 2019-05-22 セイコーエプソン株式会社 有機ｅｌ装置の製造方法、有機ｅｌ装置、電子機器
US9769929B1 (en) * 2014-09-30 2017-09-19 Apple Inc. Interconnect structures for electronic devices with component arrays
KR102417119B1 (ko) * 2015-02-11 2022-07-06 삼성디스플레이 주식회사 플렉서블 디스플레이 장치
KR102273053B1 (ko) 2015-02-16 2021-07-06 삼성디스플레이 주식회사 디스플레이 장치
US10001876B2 (en) * 2015-04-01 2018-06-19 Shanghai Tianma Micro-electronics Co., Ltd. Touch display panel, and driving method and driving circuit for the same
US10204535B2 (en) * 2015-04-06 2019-02-12 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
KR101821782B1 (ko) 2016-03-11 2018-01-25 삼성디스플레이 주식회사 디스플레이 장치 제조방법 및 디스플레이 장치
KR102610769B1 (ko) * 2016-06-09 2023-12-07 삼성디스플레이 주식회사 박막태양전지를 구비한 유기발광 표시장치 및 그 제조방법
CN106206613B (zh) * 2016-08-24 2020-12-29 昆山工研院新型平板显示技术中心有限公司 一种柔性显示基板及其制备方法
JP6762167B2 (ja) * 2016-08-29 2020-09-30 株式会社ジャパンディスプレイ 表示装置
JP6900160B2 (ja) * 2016-08-31 2021-07-07 エルジー ディスプレイ カンパニー リミテッド フレキシブル表示装置
US20190363304A1 (en) * 2017-03-30 2019-11-28 Sharp Kabushiki Kaisha El device producing method and el device producing device
CN107342375B (zh) * 2017-08-21 2019-05-31 深圳市华星光电半导体显示技术有限公司 柔性显示面板的制作方法及柔性显示面板
JP6556812B2 (ja) * 2017-11-28 2019-08-07 Ｎｉｓｓｈａ株式会社 ハードコート付フィルムタイプタッチセンサとこれを用いたフレキシブルディバイス
KR102429769B1 (ko) 2017-12-11 2022-08-04 엘지디스플레이 주식회사 디스플레이 장치 및 이를 포함하는 롤러블 디스플레이 시스템
JP7077001B2 (ja) * 2017-12-15 2022-05-30 株式会社ジャパンディスプレイ 表示装置
KR102547854B1 (ko) 2018-05-04 2023-06-26 삼성디스플레이 주식회사 폴더블 표시 장치 및 폴더블 표시 장치의 제조 방법
JP7271114B2 (ja) * 2018-09-11 2023-05-11 エルジー ディスプレイ カンパニー リミテッド 表示装置
CN109345959A (zh) * 2018-10-12 2019-02-15 京东方科技集团股份有限公司 一种柔性衬底、柔性显示面板、柔性显示装置和制作方法
JP7178867B2 (ja) * 2018-10-25 2022-11-28 三菱電機株式会社 湾曲型表示装置
US11793016B2 (en) 2019-03-29 2023-10-17 Huawei Technologies Co., Ltd. Symmetrically foldable display stack for electronic device
CN110544431B (zh) * 2019-07-25 2021-02-12 华为技术有限公司 一种复合结构、柔性屏组件及折叠显示终端
JP7529455B2 (ja) 2020-06-22 2024-08-06 株式会社ジャパンディスプレイ 検出装置
US12445065B2 (en) 2021-02-15 2025-10-14 Sharp Kabushiki Kaisha Support system and flexible display device comprising support system
WO2022263963A1 (ja) * 2021-06-15 2022-12-22 株式会社半導体エネルギー研究所 表示装置および電子機器

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TWI692108B (zh) 2013-04-10 2020-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR20140123420A (ko) 2013-04-12 2014-10-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR20240067959A (ko) * 2013-04-15 2024-05-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
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CN103531724B (zh) * 2013-09-29 2015-09-09 京东方科技集团股份有限公司 一种显示装置、柔性基板及其制作方法
KR20150075367A (ko) * 2013-12-25 2015-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190035919A (ko) * 2016-08-23 2019-04-03 쓰리엠 이노베이티브 프로퍼티즈 컴파니 일반화된 층 기계적 적합성을 가진 폴더블 디스플레이 설계
US12432865B2 (en) 2021-10-07 2025-09-30 Samsung Display Co., Ltd. Foldable electronic device including support layer including reinforcement fiber

Also Published As

Publication number Publication date
JP2019113869A (ja) 2019-07-11
US20150179717A1 (en) 2015-06-25
US9356246B2 (en) 2016-05-31
JP2015143846A (ja) 2015-08-06
US20160268315A1 (en) 2016-09-15
US9768198B2 (en) 2017-09-19

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