KR20150057377A - High mobility oxide sintered body and novel thin film transistor comprising the same - Google Patents

High mobility oxide sintered body and novel thin film transistor comprising the same Download PDF

Info

Publication number
KR20150057377A
KR20150057377A KR1020130140677A KR20130140677A KR20150057377A KR 20150057377 A KR20150057377 A KR 20150057377A KR 1020130140677 A KR1020130140677 A KR 1020130140677A KR 20130140677 A KR20130140677 A KR 20130140677A KR 20150057377 A KR20150057377 A KR 20150057377A
Authority
KR
South Korea
Prior art keywords
oxide
thin film
film transistor
layer
channel layer
Prior art date
Application number
KR1020130140677A
Other languages
Korean (ko)
Inventor
이승이
강민호
최호윤
양승호
윤원규
박상희
황치선
Original Assignee
희성금속 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 희성금속 주식회사 filed Critical 희성금속 주식회사
Priority to KR1020130140677A priority Critical patent/KR20150057377A/en
Publication of KR20150057377A publication Critical patent/KR20150057377A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)

Abstract

(M + Sn) / (M + Sn + In + Zn) atomic ratio of indium oxide, tin oxide, and zinc oxide to an oxide containing metal ions M (Hf, V, The present invention also provides a thin film transistor formed from the oxide sintered body and having high mobility characteristics and stability, and a method of manufacturing the same.
In the present invention, by optimizing the composition of a semiconductor target used as a channel layer of a thin film transistor, characteristics of a high mobility thin film transistor of 20 cm / Vs or more can be secured.

Description

TECHNICAL FIELD [0001] The present invention relates to a high mobility oxide sintered body and a novel thin film transistor element including the same. BACKGROUND OF THE INVENTION [0002]

The present invention relates to a novel oxide sintered body having a composition optimized so as to exhibit excellent mobility characteristics of the element even if the size of the display is increased, a thin film transistor formed from the oxide sintered body and realizing high mobility and stability and a method for manufacturing the same .

Among the elements of a liquid crystal-based display, thin film transistors which drive a device by displaying a driving voltage are widely used. The thin film transistor is composed of a gate electrode, an insulating film, a semiconductor layer, and a source / drain electrode. The semiconductor layer must be electrically stable and excellent in etching property. The silicon-based material has an advantage of excellent electrical stability and processability, but has a disadvantage in that it may cause malfunction of the thin film transistor due to generation of carriers due to light incidence due to absorption of a visible light region. Further, in the case of a silicon-based material, since a high-temperature process of about 200 ° C or more is required in forming amorphous silicon, the production cost is increased and deposition on a polymer substrate is difficult.

Accordingly, thin film transistors using transparent oxide semiconductors instead of the silicon-based materials have been actively developed. Transparent oxide semiconductors can be formed on a substrate without heating, exhibit a mobility of about 10 cm 2 / Vs or more, and the structure of a thin film transistor can be simply changed compared to the case of using a conventional silicon-based material. As a material of the transparent oxide semiconductor, an InGaZnO-based material including indium, gallium, zinc, and oxygen as a constituent element is typical. InGaZnO can be formed by a vapor phase method such as a sputtering method, a pulse laser vapor deposition method, or an electron beam vapor deposition method by making a polycrystalline sintered body of InGaO 3 (ZnO) x target as a target. In the case of dual mass productivity, the sputtering method is most suitable.

On the other hand, the InGaZnO oxide thin film transistor can realize stable device characteristics, but as the size of the display becomes larger, it is difficult to drive the display of the InGaZnO. Therefore, a high mobility oxide semiconductor of 20 cm / Vs or more is required for application to a device that can be mounted on a large display.

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems, and it is an object of the present invention to provide a method of manufacturing a semiconductor device including an oxide containing indium oxide, tin oxide, zinc oxide and specific metal ions (M = Al, Hf, V) It is an object of the present invention to provide an oxide sintered body having high resistance to chemical etching and excellent environmental resistance characteristics and high mobility by constituting the composition of the high mobility oxide semiconductor

It is another object of the present invention to provide a thin film transistor in which a channel layer of a thin film transistor is formed using an oxide sintered body of the above-mentioned composition and a method of manufacturing the same.

(M + Sn) / (M + Sn + In), wherein the oxide contains indium oxide, tin oxide, zinc oxide and metal ions M + Zn) atomic ratio of 10 to 45 at%. The present invention also provides an oxide sintered body for forming a thin film transistor channel layer.

In addition, the present invention provides a semiconductor device including at least a gate electrode, an insulating film, a channel layer made of an oxide semiconductor, an etch stop layer (ESL), a source electrode and a drain electrode on a substrate, and an etch stop layer (ESL) A source electrode and a drain electrode are formed on the etch stop layer (ESL), and the channel layer is formed from the oxide sintered body for forming the channel layer described above. Preferably, the etch stop layer etch stop layer type thin film transistor.

In addition, the present invention provides a method of manufacturing the above-described thin film transistor.

As a preferable example of the above-described manufacturing method, there are a step of forming a gate electrode on a substrate; Forming an insulating layer on the gate electrode; Forming a channel layer made of an oxide semiconductor of the above composition on the gate insulating layer; Forming an etch stop layer (ESL) on the channel layer, the etch stop layer (ESL) comprising at least one selected from the group consisting of SiO, SiN and Al 2 O 3 ; Forming a drain electrode and a source electrode on the etch stop layer; And a step of bringing the drain electrode and the source electrode into contact with both ends of the channel layer.

Furthermore, the present invention provides a flat panel display device including the thin film transistor described above. Here, the flat panel display device may be a liquid crystal display device or an organic light emitting display device.

In the present invention, the oxide sintered body used as the channel layer of the thin film transistor includes a specific metal ion M (Al, Hf, V) as well as an optimized composition of the atomic ratio thereof. It is possible to exhibit a strong resistance to chemical etching and a significant improvement in element stability characteristics.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a diagram showing mobility characteristics of a transistor manufactured according to Example 1. FIG.
2 is a diagram showing mobility characteristics of a transistor manufactured according to the second embodiment.
3 is a diagram showing mobility characteristics of the transistor manufactured by the third embodiment.
4 is a diagram showing mobility characteristics of the transistor manufactured by Comparative Example 1. FIG.

Hereinafter, the present invention will be described in detail.

The conventional InGaZnO oxide thin film transistor realizes stable device characteristics, but as the display becomes larger, the driving of the InGaZnO oxide is difficult to drive the display.

Accordingly, in order to manufacture an oxide device having a high mobility of 20 cm / Vs or more, the present invention provides an oxide semiconductor having a composition including not only specific metal ions M (Al, Hf, V) but also their atomic ratio .

Such an oxide semiconductor is an amorphous oxide having a high electron carrier concentration. Therefore, the thin film transistor using the amorphous oxide as a channel layer can exhibit a high mobility of 20 cm / Vs or more.

Also, since the oxide semiconductor is a sputtering target that exhibits little change in characteristics of the thin film transistor even when forming a long time, it is possible to manufacture an excellent thin film transistor which simultaneously improves the high mobility characteristics and the element stability when the thin film transistor is formed.

≪ Sintered body for oxide semiconductor film formation &

The oxide semiconductor layer used as the channel layer of the thin film transistor according to the present invention can be formed by forming an oxide sintered body as a sputtering target.

In the present invention, the oxide-sintered body for oxide semiconductor film formation comprises an oxide containing indium oxide, tin oxide, zinc oxide and metal ions M (Hf, V, Al), wherein (M + Sn) / + In + Zn) atomic ratio of 10 to 45 atomic%.

For example, when the oxide specified by the metal ion M (Hf, V, Al) is added to the indium oxide powder, the tin oxide powder and the zinc oxide powder in the ratio of (M + Sn) / (M + Sn + In + Zn) Oxides in the range of 10 to 45 atomic% can be used.

Here, the ratio of the metal ion M means a ratio based on the total amount of Sn + In + Zn.

The oxide-sintered body has the above-described composition and has a relative density of 95% or more and a specific resistance of 1 x 10 < -2 > At this time, when the relative density of the oxide-sintered body is less than 95%, there is a high possibility that an abnormal discharge occurs due to generation of nodules when the film is used as a sputtering target.

Here, the relative density is a value calculated by (actual density / theoretical density) x 100 of the sintered body. For the actual density, the density is calculated by measuring the sintered body at 1 atm and 4 ° C water.

In the case where the oxide-sintered body has 10 to 45 atomic% of (M + Sn) / (M + Sn + In + Zn) Stabilization and adsorption of oxygen in the sintered body to slightly decrease in mobility, which is a device characteristic of the transistor, but excellent characteristics can be observed from the viewpoint of optical reliability. However, when the atomic ratio of (M + Sn) / (M + Sn + In + Zn) is less than 10 atomic%, the influence of the added element is small.

In the present invention, an oxide-sintered body can be produced by a conventional method known in the art, except that the metal oxide of the above-mentioned composition is used. In one preferred embodiment of the method, a slurry is prepared by mixing indium oxide powder, tin oxide powder, zinc oxide powder, and oxides containing the above metal ions M (Hf, V, Al), followed by milling, drying and pulverizing , A step of molding the pulverized material, and a step of sintering the shaped material.

The indium oxide, tin oxide, and zinc oxide may be used without limitation in the conventional components known in the art. For example, they may be In 2 O 3, SnO 2 or ZnO.

When mixing the above-mentioned powders, additives such as binders, dispersants, defoamers, etc., which are known in the art, may be added as needed.

The dispersant is added in order to satisfy the purpose of finely pulverizing the particles while maintaining a stable dispersion evenly in the solution for a long time in the pulverized raw material particles. Nonlimiting examples of usable dispersing agents include organic acid-based ones having a carboxyl group such as citric acid, polyacrylic acid (PAA) or a salt thereof, a copolymer, or a combination thereof. The dispersant may be used in an amount of 0.5 to 3% by weight based on the weight of the powder in the slurry.

The binder is added in order to maintain the molding strength of the formed body in the process of drying the slurry after the powder is dried. Non-limiting examples thereof include polymers such as polyvinyl alcohol and polyethylene glycol. The amount of the binder used may be in the range of 0.01 to 5% by weight based on the powder in the slurry.

The antifoaming agent is used for removing bubbles in the slurry, and silicone oil, octyl alcohol, boric acid and the like can be usually used. The amount of the antifoaming agent used may be in the range of 0.001 to 0.01% by weight relative to the powder in the slurry.

The slurry prepared by mixing the above indium oxide powder, tin oxide powder, zinc oxide powder, metal oxide containing metal ion (M), water and additives is milled and dried to prepare a dry powder.

The milling may be carried out using a conventional ball mill, bead mill or the like known in the art. The viscosity of the slurry obtained through milling is preferably adjusted to 100 cps or less.

The milled slurry is spray-dried using a spray dryer or the like to obtain a dry powder.

Thereafter, the dried powder is subjected to a molding step of producing a molded body having a predetermined shape. It is preferable to use a cold isostatic press (CIP) in consideration of the convenience of the process at the time of manufacturing the molded article.

After the above-described molding step, an oxide sintered body for forming an oxide semiconductor film is produced through a sintering step. The sintering step may be performed in an oxygen gas atmosphere, an inert gas atmosphere, or an oxygen-inert gas mixed atmosphere. The sintering step may be carried out at a temperature in the range of 1000 to 1650 ° C under an atmosphere of oxygen gas or inert gas, or by sintering the shaped body at 900 to 1600 ° C under a pressurized condition of an oxygen or inert gas atmosphere. The pressure conditions may be using the CIP 2 to 3 ton / cm 2 range.

In the present invention, a sintered body for forming an oxide semiconductor film having the above-described composition and physical properties is formed on a substrate by a sputtering method, and the formed amorphous oxide thin film is used as a channel layer of the thin film transistor. For example, the manufactured sintered body is processed into a predetermined size and shape and attached to a cooling metal plate or a backing plate to be used as a sputtering target. In this case, an oxide semiconductor thin film used as a channel layer of the thin film transistor can be manufactured by supplying argon gas mixed with oxygen gas in the range of 0 to 1% in a vacuum tank at a rate of 80 sccm.

<Thin Film Transistor>

A thin film transistor (TFT) according to the present invention includes at least a gate electrode, an insulating film, a channel layer made of an oxide semiconductor, an etch stop layer (ESL), a source electrode and a drain electrode on a substrate.

Such a thin film transistor is an active element having a function of applying a voltage to a gate electrode, controlling a current flowing to a channel layer, and switching a current between a source electrode and a drain electrode.

The thin film transistor is fabricated by depositing an oxide thin film on a substrate by sputtering an oxide sintered body having the above composition and using an amorphous oxide as a channel layer. The fabricated thin film transistor is utilized in a polarization display device.

In the thin film transistor of the present invention, an ESL layer may be formed on the channel layer, and a source electrode and a drain electrode may be formed on the ESL layer. Preferably, the gate electrode is disposed under the channel layer, the source electrode and the drain electrode are located on the etch stop layer, and the both electrodes are provided in contact with both ends of the channel layer, (Etch Stop Layer) type. At this time, the source electrode and the drain electrode are brought into contact with the channel layer through a via hole or the like according to a conventional method known in the art.

The substrate can be any material used for a substrate of a conventional semiconductor device. For example, silicon (Si), glass, inorganic materials, organic materials or metals may be used without limitation.

In this case, the thickness of the substrate is not particularly limited, and when the flexible substrate is used, the thickness is preferably in the range of 50 to 500 mu m. If the thickness of the flexible substrate is less than 50 mu m, it is difficult to maintain sufficient flatness of the substrate itself. If the thickness of the flexible substrate exceeds 500 mu m, flexibility of the substrate itself becomes insufficient and it is difficult to bend the substrate itself It is because.

The substrate may have a moisture barrier layer (gas barrier layer) formed on its surface or back surface to prevent permeation of water vapor and oxygen. As the material of the moisture permeation preventing layer (gas barrier layer), an inorganic material such as silicon nitride and silicon oxide is suitably used. The moisture barrier layer (gas barrier layer) can be formed by, for example, high-frequency sputtering. When a thermoplastic substrate is used, a hard coat layer, an undercoat layer, or the like may be further formed as necessary.

The gate electrode is for applying a voltage to turn on / off the thin film transistor. The gate electrode may be formed using a conductive material such as a metal or a metal oxide. For example, the gate electrode may be formed of a metal such as Pt, Ru, Au, Ag, Mo, Al, W, or Cu or an alloy thereof, IZO (InZnO) A metal such as AZO (AlZnO) or a conductive oxide may be used, or an organic conductive compound such as polyaniline, polythiophene, and polypyrrole, or a mixture thereof may be used.

As the gate electrode, it is preferable to use Mo, Mo alloy or Cr from the viewpoint of reliability of TFT characteristics. The thickness of the gate electrode may be in the range of, for example, 10 nm to 1000 nm.

The method of forming the gate electrode is not particularly limited. For example, the gate electrode is formed by a physical method such as a wet method such as a printing method or a coating method, a vacuum evaporation method, a sputtering method, and an ion plating method, or a chemical method such as CVD or plasma CVD. Of these, the formation method can be appropriately selected in consideration of suitability with the material constituting the gate electrode. For example, when a gate electrode is formed using Mo or Mo alloy, a DC sputtering method is used. When an organic conductive compound is used for the gate electrode, a wet film-forming method may be used.

The gate insulating film can be formed using an insulating material used in a typical semiconductor device, and silicon oxide or nitride can be used. For example, HfO 2 , Al 2 O 3 , Si 3 N 4 , SiNx, YsO 3 , Ta 2 O 5 , or a mixture thereof can be used as the high-K material having a dielectric constant higher than that of SiO 2 or SiO 2 . Or a double layer film made of these materials, or a polymer insulator such as polyimide may also be used.

The thickness of the gate insulating film is not particularly limited, and is preferably in the range of 10 nm to 10 mu m. The gate insulating film needs to have a certain thickness to some extent in order to increase the voltage resistance in order to reduce the leakage current. However, if the film thickness of the gate insulating film is increased, the driving voltage of the TFT is increased. Therefore, the thickness of the gate insulating film is more preferably 50 nm to 1000 nm in the case of the inorganic insulator, and more preferably 0.5 to 5 mu m in the case of the polymer insulator.

In addition, when a high dielectric constant insulator such as HfO 2 is used for the gate insulating film, it is preferable to use a high dielectric constant insulator for the gate insulating film because the transistor can be driven at a low voltage even if the film thickness is increased.

In the present invention, the oxide semiconductor layer constituting the channel layer is produced by using the sintered body for forming an oxide semiconductor described above as a target.

At this time, the oxide semiconductor layer may be formed by sputtering using the sintered body for oxide semiconductor film formation as a target, although the difference in the composition may occur depending on the deposition atmosphere. Therefore, the oxide semiconductor layer has substantially the same composition as the target. Therefore, a metal oxide thin film having substantially the same composition as the above-described sintered body can be formed.

For example, the oxide semiconductor layer includes an oxide containing indium oxide, tin oxide, zinc oxide, and a metal ion M (Hf, V, Al), wherein (M + Sn) / (M + Sn + And is preferably contained in an amount of 10 to 45 atomic%

In the present invention, an etch stop layer (ESL) is provided to effectively protect the channel layer.

The etch stop layer may be formed using an inorganic insulating material, and may be at least one selected from the group consisting of SiO, SiN, Al 2 O 3 , and TiO 2 , for example. The etch stop layer may typically be patterned by dry etching.

The source electrode and the drain electrode may be formed using a conductive material. A metal such as Pt, Ru, Au, Ag, Mo, Al, W, Cu, Cr, Ta and Ti or an alloy thereof, an alloy such as Al-Nd and APC, tin oxide, And may be formed using a metal oxide conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or AZO (AlZnO). It is preferable to use molybdenum (Mo) or molybdenum (Mo) alloy as the material of the source electrode and the drain electrode in view of the reliability of the TFT characteristic and the etching rate with respect to the sacrificial layer. The thickness of the source electrode and the drain electrode may be, for example, in the range of 10 nm to 1000 nm.

The source electrode and the drain electrode may be formed according to a conventional method known in the art. For example, the source electrode and the drain electrode are formed by forming a film, forming a resist pattern on the film by photolithography, and etching the film.

The method of forming the film constituted by the source electrode and the drain electrode is not particularly limited. For example, a physical method such as a wet method such as a printing method or a coating method, a vacuum evaporation method, a sputtering method, an ion plating method, A chemical method such as a plasma CVD method, or the like.

In the present invention, when the source electrode and the drain electrode are formed of Mo or a Mo alloy, for example, a Mo film or an Mo alloy film is formed using DC sputtering, and then a Mo film or a Mo alloy film is coated with a resist pattern And the Mo film or the Mo alloy film is etched by the etching solution to form the source electrode and the drain electrode.

In addition to the above-described configuration, the present invention includes a protective layer for protecting a channel layer, an etch stop layer (ESL), a source electrode and a drain electrode, and isolating the device from an electronic device fabricated on the transistor.

The protective layer may be formed by curing a conventional photosensitive or thermosetting resin composition known in the art or a resin composition containing a metal oxide, a metal nitride, a metal fluoride, or the like.

The method of forming the protective layer is not particularly limited and examples of the protective layer include vacuum vapor deposition, sputtering, reactive sputtering, MBE (molecular beam epitaxy), cluster ion beam, ion plating, plasma polymerization (high frequency excitation ion plating) , A plasma CVD method, a laser CVD method, a thermal CVD method, a gas source CVD method, a coating method, a printing method, or a transfer method.

<Thin Film Transistor Manufacturing Method>

Hereinafter, a method of manufacturing a thin film transistor according to the present invention will be described. However, the present invention is not limited to the following production methods, and the steps of each process may be modified or selectively mixed if necessary.

The thin film transistor of the present invention can be manufactured by a conventional method known in the art. According to a preferred embodiment thereof, there is provided a method of manufacturing a semiconductor device, comprising: forming a gate electrode on a substrate; Forming an insulating layer on the gate electrode; Forming a channel layer made of an oxide semiconductor on the gate insulating layer; Forming an etch stop layer on the channel layer; Forming a source electrode and a drain electrode on the etch stop layer; And a step of bringing the source electrode and the source electrode into contact with both ends of the channel layer.

First, a substrate is prepared, and then a gate electrode is formed on the substrate.

As the substrate, a silicon substrate is generally used, but in addition, a glass substrate, a metal substrate, or a plastic substrate can be used.

The gate electrode may be formed by depositing a metal material on the substrate and patterning the metal material.

Next, a gate insulator is formed on the substrate so as to cover the gate electrode. Here, the gate insulating layer may be made of, for example, silicon oxide or silicon nitride.

Then, a channel layer made of an oxide semiconductor is formed on the gate insulating layer.

At this time, the channel layer includes oxides of metal ions M (Hf, V, Al) in indium oxide powder, tin oxide powder and zinc oxide powder, and the ratio of (M + Sn) / (M + Sn + An amorphous oxide thin film can be formed by depositing an oxide semiconductor sintered body containing 10 to 45 atomic% by the sputtering method.

Thereafter, an etch stop layer (ESL) is formed on the channel layer.

The etch stop layer (ESL) may be formed by depositing one of Al 2 O 3 , SiO 2 , SiN, and TiO 2 by plasma CVD, CVD, or ALD. The thickness of the ESL thin film may be, for example, in the range of 10 nm to 1000 nm, and preferably in the range of 50 to 500 nm (500 to 5000 ANGSTROM).

Here, it is preferable that after subjected to the channel layer formed on the substrate, the atmosphere in the proportion of the additional O 2 / (Ar + O 2 ) to contain oxygen of 10 to 40% of heat-treating at 100 ~ 400 ℃.

Then, a drain electrode and a source electrode are formed on the formed ESL layer according to a conventional method known in the art, and both electrodes are formed to be in contact with both ends of the channel layer. As an example, a molybdenum film can be prepared using a DC sputtering method to a thickness of 100 nm.

Thereafter, a resist film is formed on the molybdenum film, and a resist pattern is formed by photolithography. After the molybdenum film is etched with the wet etching solution, the resist film is peeled off. As a result, a source electrode and a drain electrode formed so as to cover the surface of the ESL layer and a part of the surface of the channel layer are obtained.

In the wet etching step, the etching rate of the sacrificial layer is not particularly limited, and is preferably in the range of 1 to 10 Å / sec. The etchant used for the wet etching may be any conventional etchant known in the art.

Then, a protective layer covering the channel layer, the ESL layer, the source electrode, and the drain electrode is formed, thereby completing the manufacture of the thin film transistor according to the present invention.

The thin film transistor according to the present invention can be applied as a switching device or a driving device to a flat panel display device such as a liquid crystal display device and an organic light emitting display device.

As described above, since the transistor according to the present invention has a mobility of 20 cm 2 / vs or more, and is stable and has little change in characteristics due to light, when applied to a flat panel display device, reliability of the flat panel display device can be improved have. In particular, even if the display size is increased, it can be used stably.

Here, the structures of the above-described liquid crystal display device and organic light emitting display device are well known, and a detailed description thereof will be omitted. The transistor according to the present invention can be applied to various fields of electronic devices such as a memory device and a logic device as well as a flat panel display device.

Hereinafter, the present invention will be described in more detail with reference to Examples. However, the following Examples and Experimental Examples are merely illustrative of the present invention, and the scope of the present invention is not limited by the following Examples and Experimental Examples.

[Example 1]

1-1. Manufacture of transparent oxide sintered body

Each oxide powder of indium oxide (In 2 O 3 ), 1.5 탆 tin oxide (SnO 2 ), zinc oxide (ZnO) and metal ion M having an average particle size of powder of 1.0 탆 was mixed with indium 44 (Hf, V, Al) of 0.32 atomic%, and then mixed to obtain a wet mixed slurry having a concentration of 55%, which was dispersed in a bead mill medium of 0.1 mm in thickness Zirconia beads. The dispersed slurry was spray-dried, and the obtained granulated powder was pressure-molded and sintered at a flow rate of 25 L / min at 1100 to 1500 ° C for 10 hours. The oxide semiconductor target thus obtained had a relative density of 98% and a specific resistance of 3 x 10 &lt; -3 &gt; [Omega] cm. The sintered body was used as an oxide layer.

1-2. Thin Film Transistor Manufacturing

The thin film transistor may have a gate electrode G1 formed on a substrate (glass) B. The substrate B is any of various substrates that can be used in a general semiconductor device process such as a glass substrate, a metal substrate, a plastic substrate, and a plastic film. The gate electrode G1 may be generally formed of an electrode material. A gate insulating layer GI1 may be formed on the substrate B so as to cover the gate electrode G1.

The gate insulating layer GI1 may be a silicon oxide layer or a silicon nitride layer. In the ESL structure, the gate electrode G1 is provided under the channel layer A1, and the source electrode S1 and the drain electrode D1 are in contact with the upper surface of the channel layer A1. The power density was 0.5 to 3.6 W / cm 2 using a high frequency (RF) sputter during the formation of the channel layer (A1) using a mixed gas of argon and oxygen. After the channel layer A1 was formed, the ESL layer A2 was deposited, and a pattern was formed, followed by chemical etching. Thereafter, a source electrode (S1) and a drain electrode (D1) were deposited and a pattern was formed. Then, the source electrode and the drain electrode were separated through chemical etching.

After the sputtering film was formed on the substrate B, the post-heat treatment temperature was further raised at 100 to 400 ° C in an atmosphere containing oxygen having a ratio of O 2 / (Ar + O 2 ) of 10 to 40%.

As a method of measuring the device characteristics, a voltage of 0.1 V and 10 V was applied to the drain electrode D 1 and the source electrode S 1 of the transistor to observe a change in the characteristics of the transistor . As a result of measuring the characteristics of the transistor, the results shown in Table 1 and Fig. 1 were obtained.

[Example 2]

Each oxide powder of indium oxide (In 2 O 3 ), 1.5 탆 tin oxide (SnO 2 ), zinc oxide (ZnO) and metal ion M having an average particle size of powder of 1.0 탆 was mixed with indium 15 (Hf, V, Al) of 0.32 atomic%, and then mixed to obtain a wet mixed slurry having a concentration of 55%, which was dispersed in a bead mill medium of 0.1 mm in thickness Zirconia beads. The dispersed slurry was spray-dried, and the obtained granulated powder was pressure-molded and sintered at a flow rate of 25 L / min at 1100 to 1500 ° C for 10 hours. The relative density of the oxide semiconductor target thus obtained was 98%, the resistivity was measured to be 1 10 -3 ? Cm, and the sintered body was used as an oxide layer. A thin film transistor was fabricated in the same manner as in Example 1.

Using the sintered body, a transistor was fabricated as in Example 1 and the device was measured. As a result, the results shown in Table 1 and FIG. 2 were obtained.

[Example 3]

Each oxide powder of indium oxide (In 2 O 3 ), 1.5 탆 tin oxide (SnO 2 ), zinc oxide (ZnO) and metal ion M having an average particle size of powder of 1.0 탆 was mixed with indium 20 (Hf, V, Al) of 0.32 atomic%, and then mixed to obtain a wet mixed slurry having a concentration of 55%, which was dispersed in a bead mill medium of 0.1 mm in thickness Zirconia beads. The dispersed slurry was spray-dried, and the obtained granulated powder was pressure-molded and sintered at a flow rate of 25 L / min at 1100 to 1500 ° C for 10 hours. The relative density of the oxide semiconductor target thus obtained was 98%, the resistivity was measured to be 1 10 -3 ? Cm, and the sintered body was used as an oxide layer. A thin film transistor was fabricated in the same manner as in Example 1.

The sintered body was used to fabricate a transistor as in Example 1, and the device was measured. As a result, the results shown in Table 1 and FIG. 3 were obtained.

[Comparative Example 1]

Each oxide powder of indium oxide (In 2 O 3 ), 1.5 탆 tin oxide (SnO 2 ), zinc oxide (ZnO) and metal ion M having an average particle size of the powder of 1.0 탆 was mixed with indium 92 (Hf, V, Al) of 0.32 atomic%, and then mixed to obtain a wet mixed slurry having a concentration of 55%, which was dispersed in a bead mill medium of 0.1 mm in thickness Zirconia beads. The dispersed slurry was spray-dried, and the obtained granulated powder was pressure-molded and sintered at a flow rate of 25 L / min at 1100 to 1500 ° C for 10 hours. The relative density of the oxide semiconductor target thus obtained was 98%, the resistivity was measured to be 1 10 -3 ? Cm, and the sintered body was used as an oxide layer. A thin film transistor was fabricated in the same manner as in Example 1. Using this sintered body, a transistor was fabricated as in Example 1 and the device was measured. As a result, the results shown in Table 1 and FIG. 4 were obtained.

Table 1 below is a table showing mobility characteristics of the transistors manufactured in Examples 1 to 3 and Comparative Example 1.

As a result of the experiment, in the present invention, not only the specific metal ions M (Al, Hf, V) are included in the composition of the oxide-sintered body but also the atomic ratio of them is optimized to exhibit a high mobility of 20 cm / Vs or more, (See Table 1).

In Sn Zn M Target density Mobility Example 1 44at% 12at% 44at% 0.32at% 98% 28cm / Vs Example 2 15at% 38at% 47at% 0.32at% 98% 27cm / Vs Example 3 20at% 40at% 40at% 0.32at% 98% 25cm / Vs Comparative Example 1 92at% 6at% 2at% 0.32at% 98% 0cm / Vs

Claims (10)

An oxide containing indium oxide, tin oxide, zinc oxide and metal ions M (Hf, V, Al) and containing 10 to 45 atomic% of (M + Sn) / (M + Sn + Wherein the oxide sintered body is formed of a metal oxide. The oxide sintered body for forming a thin film transistor channel layer according to claim 1, wherein the relative density is 95% or more and the specific resistance is 1 x 10 &lt; -2 &gt; A semiconductor device comprising at least a gate electrode, an insulating film, a channel layer made of an oxide semiconductor, an etch stop layer (ESL), a source electrode and a drain electrode,
An etch stop layer (ESL) is formed on the channel layer, a source electrode and a drain electrode are formed on the etch stop layer (ESL)
Wherein the channel layer is formed from the oxide-sintered body of claim 1. The thin film transistor according to claim 3, wherein the thickness of the etch stop layer is in the range of 100 to 1000 nm. The thin film transistor according to claim 3, wherein the source electrode and the drain electrode are made of molybdenum or a molybdenum alloy. The thin film transistor according to claim 3, wherein the substrate is selected from the group consisting of a glass substrate, a plastic substrate, and a metal substrate. The semiconductor device according to claim 3, wherein the gate electrode is provided under the channel layer,
Wherein the source electrode and the drain electrode are etch stop layers disposed on the etch stop layer so as to be in contact with both ends of the channel layer. A flat panel display comprising the thin film transistor according to claim 3. Forming a gate electrode on a substrate;
Forming a gate insulating layer on the gate electrode;
Forming a channel layer from the oxide semiconductor sintered body of claim 1 on the gate insulating layer;
Forming an etch stop layer (ESL) on the channel layer, the etch stop layer (ESL) comprising at least one selected from the group consisting of SiO, SiN and Al 2 O 3 ;
Forming a drain electrode and a source electrode on the etch stop layer; And
A step of bringing the drain electrode and the source electrode into contact with both ends of the channel layer
The method of manufacturing a thin film transistor according to claim 3, The method according to claim 9, wherein the channel layer is formed by sputtering on the substrate, and further heat-treated at 100 to 400 ° C in an atmosphere containing oxygen at a ratio of O 2 / (Ar + O 2 ) of 10 to 40% Wherein the thin film transistor is a thin film transistor.
KR1020130140677A 2013-11-19 2013-11-19 High mobility oxide sintered body and novel thin film transistor comprising the same KR20150057377A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020130140677A KR20150057377A (en) 2013-11-19 2013-11-19 High mobility oxide sintered body and novel thin film transistor comprising the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020130140677A KR20150057377A (en) 2013-11-19 2013-11-19 High mobility oxide sintered body and novel thin film transistor comprising the same

Publications (1)

Publication Number Publication Date
KR20150057377A true KR20150057377A (en) 2015-05-28

Family

ID=53392259

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130140677A KR20150057377A (en) 2013-11-19 2013-11-19 High mobility oxide sintered body and novel thin film transistor comprising the same

Country Status (1)

Country Link
KR (1) KR20150057377A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019117363A1 (en) * 2017-12-13 2019-06-20 엘티메탈 주식회사 High-mobility oxide sintered body and thin-film transistor comprising same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019117363A1 (en) * 2017-12-13 2019-06-20 엘티메탈 주식회사 High-mobility oxide sintered body and thin-film transistor comprising same

Similar Documents

Publication Publication Date Title
JP5724157B2 (en) Oxide semiconductor target and method of manufacturing oxide semiconductor device using the same
KR101518091B1 (en) Field effect transistor using oxide semiconductor and method for manufacturing the same
KR101538283B1 (en) Field-effect transistor, method for manufacturing same, and sputtering target
TWI453915B (en) Thin film transistor
KR101516034B1 (en) Oxide semiconductor field effect transistor and method for manufacturing the same
TWI517409B (en) Thin film transistor and method for manufacturing the same
WO2010021106A1 (en) Semiconductor device, method for manufacturing semiconductor device, transistor substrate, light emitting device and display device
JP6414946B2 (en) Thin film transistor and zinc oxide sputtering target therefor
WO2014181777A1 (en) Thin-film transistor and method for manufacturing same
KR20090122391A (en) Sputtering target, oxide semiconductor film and semiconductor device
KR20080069607A (en) Semiconductor thin film, method for producing same, thin film transistor and active-matrix-driven display panel
CN103855194A (en) Semiconductor materials, transistors including the same, and electronic devices including transistors
US20040222089A1 (en) Sputtering target and transparent electroconductive film
WO2015119385A1 (en) Thin-film transistor having active layer made of molybdenum disulfide, method for manufacturing same, and display device comprising same
CN104798205A (en) Oxide semiconductor thin film, method for producing same, and thin film transistor
CN103325842A (en) Oxide semiconductor thin film and thin film transistor
KR102486098B1 (en) Oxide sintered body and thin film transistor comprising the same
KR20150057377A (en) High mobility oxide sintered body and novel thin film transistor comprising the same
KR20190070732A (en) High mobility oxide sintered body and thin film transistor comprising the same
TW201936951A (en) Oxide semiconductor thin film, thin film transistor, and sputtering target
TWI767186B (en) Oxide semiconductor thin films, thin film transistors and sputtering targets
WO2012124408A1 (en) Method for producing oxide semiconductor thin film
KR101500175B1 (en) High density oxide sintered body and novel thin film transistor comprising the same
KR101512819B1 (en) ZnO BASED SPUTTERING TARGET, METHOD OF FABRICATING THEREOF AND THIN FILM TRANSISTOR HAVING SHIELDING LAYER DEPOSITED BY THE SAME
JP6252903B2 (en) Thin film transistor and manufacturing method thereof

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
E601 Decision to refuse application