KR20150040406A - Method for manufacturing encapsulation film and electronic device including encapsulation film manucactured thereby - Google Patents

Abstract

A manufacturing method of an encapsulation film on an organic electroluminescence device according to an embodiment of the present invention comprises the steps of: forming an encapsulation film substrate by depositing a thin film layer on a substrate; forming a device substrate by depositing an organic polymer thin film on an organic electroluminescence device; combining the organic polymer thin film of the device substrate and the thin film layer of the encapsulation film substrate; and treating the device substrate and the encapsulation film substrate with heat.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an electronic device including an encapsulation film and a sealing film made from the encapsulation film,

The present invention relates to a process for producing a sealing film and an electronic device comprising the sealing film produced therefrom.

Unlike conventional liquid crystal displays (LCDs), organic light emitting diodes (OLEDs), which have been widely recognized as a next generation display, do not require a separate light source for light emission, It has the advantage of being. In addition, organic electroluminescent devices can be manufactured on a flexible substrate, and research and development are currently underway as flexible displays. However, the organic-based device including such an organic electroluminescent device is very vulnerable to atmospheric gases, particularly moisture or oxygen, and has a low durability against heat, thus requiring a thorough sealing process. If the sealing process is not accompanied by an appropriate sealing process, the lifetime of the organic EL device may be drastically reduced, and a dark spot may be formed in the organic EL device, leading to a defective product. On the contrary, when an appropriate sealing process is accompanied in the process of fabricating an organic material device, the reliability of the organic material device can be secured and high quality organic material device can be produced.

Generally, two kinds of methods are used as the sealing process. First, there is a covering method in which a getter is attached to a cover made of glass or metal, and then the cover is attached to an organic material element using an adhesive having a low water permeability. Second, various types of films are laminated There is a thin film method in which the laminated film is attached to an organic material element or the laminated film is directly deposited on an organic material element.

Among these, the films used in the thin film method are mainly composed of materials (SiOx, SiNx, SiOxNy, and AlxOy) having excellent oxygen barrier and water vapor barrier properties. In order to deposit the films, a chemical vapor deposition (CVD) Plasma enhanced chemical vapor deposition (PECVD) methods are used.

However, since the single inorganic thin film is not enough to protect the device from the gas in the atmosphere, there is a limitation in lowering the water vapor transmission rate (WVTR) of the organic device and the oxygen transmission rate (OTR) of the organic device .

Therefore, rather than maintaining the inorganic thin film as a single film, at least five times of repetitive organic-inorganic films are stacked. However, the conventional method for producing an organic-inorganic barrier film has a limitation in forming a uniform thin film, and the interfacial adhesion force is weak, which is still a problem. In addition, in the case of the conventional liquid-phase-based organic thin film deposition method, since an additional solvent is used, there is a problem that the organic substance device manufactured by the liquid-phase-based organic thin film deposition method may cause element damage due to the solvent. Conventional inorganic thin film deposition methods sometimes have a high process temperature or deteriorate the performance of the organic material element by using plasma.

Therefore, there is a need for research on a method capable of producing a sealing film without using a solvent and a method capable of producing a sealing film without damaging the organic field element.

Korean Patent Publication No. 10-2013-0090141 (Publication date: 2013.08.13)

The present invention provides a method for producing a sealing film capable of producing a sealing film without using a solvent and an electronic device including the sealing film produced therefrom.

The present invention also provides a method for manufacturing a sealing film which does not damage an organic field element during the deposition of an organic polymer thin film and an inorganic thin film, and an electronic device including the sealing film produced therefrom.

A method of manufacturing a sealing film according to an embodiment of the present invention is a method of manufacturing a sealing film on an organic electroluminescent device, comprising: forming an encapsulating substrate by depositing a thin film layer on a substrate; An element substrate forming step of forming an element substrate by depositing an organic polymer thin film on the organic electric field element; A bonding step of bonding the organic polymer thin film of the element substrate and the thin film layer of the sealing substrate together; And a heat treatment step of heat-treating the element substrate and the sealing substrate; .

Here, the device substrate forming step may include: a coating step of applying a monomer and an initiator on the organic electric field element; A free radical formation step of pyrolyzing the initiator to form a free radical; And an organic polymer thin film deposition step of depositing the organic polymer thin film on the organic field element by activating the monomer using the free radicals; In the coating step, the free radical forming step, and the organic polymer thin film deposition step, a solvent may not be used.

Here, the heat treatment step may cross-link the organic polymer thin film of the device substrate and the thin film layer of the sealing substrate.

Here, the cross-linking may be a combination of an epoxy group included in the organic polymer thin film and an amine group (NHx) or a hydroxyl group (OH) included in the thin film layer.

In the heat treatment step, the device substrate and the sealing substrate may be heat-treated at a temperature of 50 ° C or more and less than 100 ° C.

Here, the sealing substrate may further include a composite layer between the substrate and the thin film layer.

The organic electroluminescent device may be an organic light emitting diode (OLED).

On the other hand, another category of embodiments of the present invention includes a substrate; An organic field element disposed on the substrate; A bonding layer disposed on the organic field element; And a composite layer disposed on the bonding layer; Wherein the bonding layer comprises an epoxy group, an amine group (NHx) or an epoxy group and a hydroxyl group (OH), wherein the epoxy group and the amine group (NHx) Or the epoxy group and the hydroxyl group (OH) are crosslinked.

Here, the organic electroluminescent device may be an organic electroluminescent device (OLED).

The method for manufacturing a sealing film according to an embodiment of the present invention and the electronic device including the sealing film produced therefrom have an advantage that the organic electronic device can be prevented from being damaged due to the use of a solvent because no solvent is used.

In addition, since the organic polymer thin film and the inorganic thin film are deposited on a separate substrate without being deposited on the organic electric field element, the organic polymer thin film and the inorganic thin film are not deposited on the organic electro- An organic polymer thin film and an inorganic thin film can be formed on the device, thereby maximizing the lifetime of the organic field device.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view of a seal membrane composed of a organic-inorganic composite membrane according to the present invention.
2 is a schematic view of a sealing membrane according to the present invention.
3 is a flow chart for explaining a method of depositing an organic polymer thin film in a method of manufacturing a sealing film according to the first embodiment.
FIG. 4 is a schematic diagram showing pyrolysis of the initiator and activation of the monomers in the deposition method of the organic polymer thin film shown in FIG.
5 is a flowchart for explaining a method for manufacturing a sealing film according to the second embodiment.
6 is a schematic view for explaining the cross-linking between the element substrate and the encapsulation substrate according to the second embodiment.
7 is a schematic view specifically showing the sealing substrate shown in Fig.
8 is a schematic view of an electronic device including a sealing film manufactured by the sealing film manufacturing method according to the second embodiment.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

In the description of the embodiments according to the present invention, in the case where an element is described as being formed on "on or under" another element, the upper (upper) or lower (lower) (On or under) all include that the two elements are in direct contact with each other or that one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

1 is a cross-sectional view of an encapsulating membrane composed of a organic-inorganic composite membrane according to the present invention, and Fig. 2 is a schematic view of an encapsulating membrane according to the present invention.

The encapsulation film of the present invention is formed to protect the substrate 10 from the external environment. The sealing film may be an organic-inorganic composite film 100 including the organic polymer thin film 20 and the inorganic thin film 30.

The organic-inorganic composite film 100 has a structure in which the organic polymer thin film 20 and the inorganic thin film 30 are laminated vertically. The sealing film composed of the organic-inorganic composite membrane 100 can be formed by changing the vertical relationship between the organic polymer thin film 20 and the inorganic thin film 30 or by piling up the organic polymer thin film 20 and the inorganic thin film 30 into a plurality of layers Or may be a laminated structure, and the permeation of external moisture and / or oxygen is blocked in this configuration.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an encapsulating film manufacturing method according to an embodiment of the present invention and an electronic device including a sealing film produced therefrom will be described with reference to the accompanying drawings.

≪ First Embodiment >

The sealing film manufacturing method according to the first embodiment is a method designed to be applied to the deposition of an organic polymer thin film in the production of an organic-inorganic composite film by modifying and applying a chemical vapor deposition (CVD) method.

The chemical vapor deposition method is one of thin film deposition processes, which is a method of depositing a desired material on a substrate. The thin film deposition process mainly includes physical vapor deposition (PVD) and chemical vapor deposition , CVD).

The physical vapor deposition is a deposition technique that does not involve a chemical reaction, and is mainly used for metal thin film deposition. The physical vapor deposition includes a vacuum evaporation method and a sputtering method. On the other hand, chemical vapor deposition is a deposition technique involving a chemical reaction. In order to induce a reaction, a solvent is required and it has to be carried out under harsh conditions.

Chemical vapor deposition processes all proceed through a very complicated process in a reactor, and fluid flow in the reactor, mass transfer and the like act in a complex manner to determine the properties of the deposited film. Therefore, the chemical reaction characteristics of the material to be supplied and the structure of the reactor can also be important variables for thin film formation.

The sealing film manufacturing method according to the first embodiment can deposit the organic polymer thin film by determining the type and condition of the monomer without using such a complicated process.

That is, the method of manufacturing the sealing film according to the first embodiment not only makes it possible to use the method used only for deposition of the conventional inorganic thin film in the deposition of the organic polymer thin film, - Elimination of the inconvenience of the process by omitting circulation of atmospheric pressure - vacuum - atmospheric pressure and enabling the production of the organic - inorganic composite membrane at one time in a single vacuum process.

In addition, the general chemical vapor deposition process requires a high temperature of more than 1000 DEG C at a low temperature of 500 DEG C to induce a desired chemical reaction, whereas a sealing film production method of the first embodiment requires a temperature of 10 DEG C to 40 DEG C The desired organic polymer thin film can be easily deposited on a low-temperature substrate. In addition, it is possible to manufacture the organic-inorganic composite membrane more easily than before by minimizing changes in the pressure and temperature conditions to be performed in the process of depositing the organic film and the inorganic film. The sealing film manufacturing method according to the first embodiment can deposit a desired polymer thin film with a monomer and an initiator in a gas phase condition without using a solvent, particularly an organic solvent, in a vapor deposition process, It is possible to exclude the fear of damage to the substrate due to the solvent even if it is included.

Hereinafter, a method for manufacturing a sealing film according to the first embodiment will be described in detail.

First, a method of depositing the organic polymer thin film 20 will be described with reference to FIG.

FIG. 3 is a flow chart for explaining a method of depositing an organic polymer thin film in a method for manufacturing an encapsulating membrane according to the first embodiment. FIG. 4 is a cross- Fig. Specifically, I in Fig. 4 denotes an initiator, M denotes a monomer, I 'denotes a thermally-radical-initiated initiator, and M' denotes a monomer which has been radicalized by the initiator.

2 and 3, a method of depositing the organic polymer thin film 20 according to the first embodiment includes a step (S100) of applying a monomer and an initiator on the substrate 10 or the inorganic thin film 30, (S300) of activating the monomer using the free radicals (S300); forming a thin film of organic polymer on the substrate (10) or the inorganic thin film (30) (Step S400). Here, the above steps are characterized in that no solvent is used.

Specifically, the substrate 10 as the uppermost layer of the inorganic thin film 30 or the inorganic thin film 30 is subjected to oxygen plasma treatment at a power of 100 W under an oxygen condition of 50 mtorr for 60 seconds. In addition, the substrate 10 is placed in a susceptor of a plasma polymerization reactor and is put into a vacuum chamber. Glycidyl methacrylate (GMA), one of the vaporized monomers, and tert-butylperoxide (TBPO), one of the initiators, were introduced into a chamber of 1.75 to 2.95 sccm (cm ³ / min) The polymerization reaction is initiated by a tungsten filament heated at 220 占 폚. At this time, the pressure of the polymerization reaction is maintained at 200 mtorr. Finally, an organic polymer thin film 20 of polyglycidyl methacrylate (PGMA) having a thickness of 200 nm is formed on the substrate 10 by a polymerization reaction.

4, when a radical initiator (I ') is formed by pyrolysis of the initiator (I), the radical initiator (I') activates the monomer (M) The peripheral monomers (M) are led to the radicalized monomer (M '), and the above process is continued to form an organic polymer thin film.

The substrate 10 may include a flexible substrate, a glass substrate, or the like. Here, the flexible substrate may include polyethylene terephthalate (PET), poly (methyl methacrylate), PMMA, polycarbonate (PC), polyethylenesulfon (PES) .

In addition, the substrate 10 may include an organic field element formed on the substrate. The organic electroluminescent device may be any organic electroluminescent device (OLED), organic photovoltaic cells (PPV), organic thin film transistor (Organic Thin Film Transistors, OTFTs), but the present invention is not limited thereto and can be applied to various other types of organic electronic products.

Here, the thickness of each layer of the organic polymer thin film 20 is 400 nm or less, and the total thickness of the organic-inorganic hybrid film 100 formed by the organic polymer thin film 20 is 10 μm, preferably 2 μm or less.

Here, the monomer means a unit which can be used for forming the organic polymer thin film 20, and is not limited thereto as long as it is an organic material having a property of blocking external moisture and oxygen permeation as constituent components of the sealing film. Examples of monomers include, but are not limited to, Acrylic Acid (AA), Acryl Amide (AcAm), Allylamine, Allyl Methacrylate (AMA), Allyltriethoxysilane, 4-Aminostyrene (4-AS), Benzyl Methacrylate (BMA) (DMEMS), Dimethylphenylvinylsilane (DMPVS), Divinyl benzene (DVB), Dibutyl benzene (DVB), and the like. (EGDMA), Furfuryl methacrylate (FMA), Glycidyl methacrylate (PFDMA), 3,3,4,4,5,5, 5,6, 2-Hydroxyethyle methacrylate (HEMA), Isobornyl acrylate (IBA), 2-hydroxyethyl methacrylate (HMA) Isocyanatoethyl methacrylate, Maleic anhydride (MA), Methacrylic acid (MAA), Methacrylic anhydride, N-isopropylacrylamide (NIPAAm), Pentafluorophenyl methacrylate, Propargyl methacrylate (PMA), Tetrahydrofurfuryl acrylate, Tetrahydrofurfuryl me acrylate, 2,4,6,8-Tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane (V4D4), 2,4,6-Trimethyl-2,4,6-trivinylcyclotrisilazane, 1,3,5-Trimethyl-1 , 3,5-trivinylcyclotrisiloxane (V3D3), 1,2,4-trivinylcyclohexane, vinyl benzoate, N-vinylcaprolactam and 1-vinylpyrrolidone (VP).

Here, the monomer is volatile in a chemical vapor deposition process and may be a substance which can be activated by an initiator. Further, the monomer may be a substance that can be vaporized under reduced pressure and elevated temperature.

The monomers are compounds capable of forming a polymer thin film in the method of the present invention. Those skilled in the art (hereinafter referred to as 'the person skilled in the art' ) Can be appropriately selected and used as a constituent material of the organic polymer thin film. Table 1 below shows an example of a monomer that can be used in the first embodiment of the present invention.

Name Structure AA
(Acrylic Acid)

AcAm
(Acryl Amide)

Allylamine

AMA
(Allyl methacrylate)

Allyltriethoxysilane

4-AS
(4-aminostyrene)

BMA
(Benzyl Methacrylate)

1,4-Butanediol divinyl ether

CHMA
(Cyclohexyl Methacrylate)

1,9-Decadiene

DEAEA
(2- (Diethylamino) ethyl acrylate)

DEAEMA
(2- (Diethylamino) ethyl methacrylate)

DEGDVE
(Di (ethylene glycol) divinyl ether)

DMAEA
(2- (Dimethylamino) ethyl acrylate)

DMAEMA
(2- (Dimethylamino) ethyl Methacrylate)

DMAMS
(Dimethylaminomethyl styrene)

DMPVS
(Dimethylphenylvinylsilane)

DVB
(Divinyl benzene)

PFDA
(1H, 1H, 7H-Dodecafluoroheptyl acrylate)

EGDA
(Ethylene glycol diacrylate)

EGDMA
(Ethylene glycol dimethacrylate)

FMA
(Furfuryl methacrylate)

GMA
(Glycidyl methacrylate)

PFDMA
(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl methacrylate)

HMA
(Hexyl Methacrylate)

HEMA
(2-hydroxyethyl methacrylate)

IBA
(Isobornyl acrylate)

2-Isocyanatoethyl Methacrylate

MA
(Maleic anhydride)

MAA
(Methacrylic acid)

Methacrylic Anhydride

NIPAAm
(N-isopropylacrylamide)

Pentafluorophenyl methacrylate C ₆ F ₅ OCOC (CH ₃ ) = CH ₂ PMA
(Propargyl Methacrylate) HCCCH ₂ OCOC (CH ₃ ) = CH ₂

Tetrahydrofurfuryl acrylate

Tetrahydrofurfuryl meacrylate

V4D4
(2,4,6,8-Tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane)

2,4,6-Trimethyl-2,4,6-trivinylcyclotrisilazane

V3D3
(1,3,5-Trimethyl-1,3,5-trivinylcyclotrisiloxane)

1,2,4-Trivinylcyclohexane

Vinyl benzoate

N-vinylcaprolactam

VP
(1-vinylpyrrolidone)

Here, the initiator is a substance that induces the activation of the first reaction so that the monomers can form a polymer in the process of the present invention. The initiator is preferably a material capable of pyrolyzing at a temperature below the temperature at which the monomer is pyrolyzed to form free radicals. Table 2 below shows an example of an initiator that can be used in the first embodiment of the present invention.

Name Structure
TBPO
(tert-butylperoxide)

Thermal initiator
Benzophenone

Photo-initiator

Referring to Table 2, the initiator may be a peroxide, such as tert-butyl peroxide or benzophenone, but the type of initiator that can be used in the process of the present invention is not limited by the above examples. The monomers and initiator can be applied sequentially in the reactor according to the choice of the person skilled in the art and can be applied simultaneously.

The tert-butyl peroxide is a volatile substance having a boiling point of about 110 캜, which pyrolyzates at about 150 캜. On the other hand, the addition amount of the initiator may be an amount known in the art in an amount required for a conventional polymerization reaction, and may be, for example, 0.5 to 5 mol%, but is not limited to the above range, Or can be written down.

Here, the heat for providing the organic polymer thin film 20 is not limited as long as it is heat provided by a person skilled in the art in a usual manner that can be provided in a gaseous condition. Preferably, the provision of heat of the present invention can be accomplished through filaments. The range of heat that is preferably provided may be 200 ° C to 250 ° C. In the sealing film production method according to the first embodiment, heat is provided by a tungsten filament heated at 220 캜 in a vacuum chamber environment in which a vaporized monomer and an initiator are present, thereby forming an organic polymer thin film on the substrate.

The physical properties of the polymer thin film obtained through the process can be easily controlled by controlling the process parameters of the initiative chemical vapor deposition (iCVD) including the initiator. That is, by adjusting the process pressure, time, temperature, flow rate of the initiator and monomer, filament temperature, and the like, it is possible to control physical properties such as the molecular weight of the polymer thin film, the desired thickness of the thin film,

In a preferred embodiment, the high temperature filament in the reactor of the present invention is maintained at 200 ° C to 250 ° C to induce a gaseous reaction in which the temperature of the filament is sufficiently high for pyrolysis of the tert-butyl peroxide, Most of the organic materials, including the organic matter, are not pyrolyzed, and various kinds of monomers can be converted into polymer thin films without chemical damage.

Hereinafter, a method of depositing the inorganic thin film 30 using atomic layer deposition (ALD) will be described. Here, atomic layer deposition is well understood by a person skilled in the art, so a detailed description thereof will be omitted.

Referring to FIG. 2, an inorganic thin film 30 may be formed on the organic polymer thin film 20. Here, the inorganic thin film 30 may be formed between the substrate 10 and the organic polymer thin film 20.

The inorganic thin film 30 can be deposited on the substrate 10 or the organic polymer thin film 20 using atomic layer deposition. Here, atomic layer deposition is a technique that enables deposition between fine layers through adsorption and substitution of molecules at the gas phase. The inorganic thin film 30 may include amorphous aluminum oxide (AlxOy).

Specifically, deposition of the inorganic thin film 30 including aluminum oxide (Al ₂ O ₃ ) will be described. First, trimethylaluminum (TMA) is adsorbed on a wafer in an atomic layer evaporator chamber to form a monolayer , And trimethylaluminum is purged with nitrogen gas. Water is also reacted with trimethylaluminum in the atomic layer evaporator chamber to grow a film of atomic layers. The above process can be repeated according to the thickness of the inorganic thin film 30. [ Here, the thickness of the inorganic thin film 30 may be less than 40 nm as 1/10 of the organic polymer thin film 20.

Here, the temperature used in the above process is 90 DEG C or lower. Specifically, the chamber temperature was maintained at 90 占 폚, the chamber lid and sidewall temperature at 80 占 폚, and the gas line temperature at 60 占 폚.

Therefore, even when the sealing film is directly deposited on the organic electric field element, the thermal damage of the element can be minimized during the deposition of the inorganic thin film 30. For reference, the heat damage temperature of the organic electroluminescence device OLED is 100 deg.

As described above, the sealing film manufacturing method according to the first embodiment has an advantage that the organic electroluminescent device can be prevented from being damaged due to the use of the solvent because no additional solvent is used.

In the sealing film manufacturing method according to the first embodiment, the deposition process of the organic polymer thin film 20 is usually performed at 15 to 40 ° C., and the deposition process of the inorganic thin film 30 is performed at a relatively low temperature It is possible to maximize the lifetime of the organic electroluminescent device without deteriorating the performance of the organic electroluminescent device included in the substrate 10 during the two deposition processes even when a sealing film is directly deposited on the organic electroluminescent device.

Hereinafter, a method for manufacturing a sealing film according to the second embodiment will be described in detail with reference to Figs. 5 to 7. Fig.

≪ Second Embodiment >

Fig. 5 is a flow chart for explaining a sealing film manufacturing method according to the second embodiment, Fig. 6 is a schematic view for explaining the crosslinking between the element substrate and the sealing substrate according to the second embodiment, Fig. 7 is a cross- 1 is a schematic view specifically showing an illustrated encapsulating substrate.

Referring to FIG. 5, the sealing film manufacturing method according to the second embodiment includes a step S100 'of forming an element substrate and a sealing substrate, a step S200' of attaching the element substrate and the sealing substrate, (S300 ').

Referring to FIGS. 5 to 7, a method of manufacturing a sealing film according to the second embodiment will be described in detail. First, the element substrate 200 and the sealing substrate 300 are formed (S100 '). Specifically, the element substrate 200 including the substrate 10, the organic electric field element 240 and the organic polymer thin film 20 is formed, and the sealing substrate 300 (including the composite layer 50 and the thin film layer 60) ).

The substrate 10 may be the same as the substrate described in the first embodiment.

The organic electroluminescent device 240 includes a first electrode 210, an organic light emitting layer 220, and a second electrode 230. Here, the organic electric field device 240 may be one of an organic light emitting diode (OLED), an organic solar battery (OPVs), and an organic thin film transistor (OTFT).

The organic polymer thin film 20 may be an organic polymer thin film deposited by the method described in FIG. Here, the organic polymer thin film 20 may include polyglycidyl methacrylate (PGMA).

The composite layer 50 may be a layer in which the substrate 10 ', the organic polymer thin film 20 and the inorganic thin film 30 are sequentially formed as shown in FIG. Here, the organic polymer thin film 20 and the inorganic thin film 30 may be of a structure in which the up-and-down relationship is changed or the organic polymer thin film 20 and the inorganic thin film 30 are paired and stacked in a plurality of layers. Here, the organic polymer thin film 20 and the inorganic thin film 30 formed on the composite layer 50 may be formed by the method described in the first embodiment, or may be formed by a known technique. Here, the substrate 10 'may be the same substrate as the substrate 10, or may be another substrate.

The thin film layer 60 is a layer capable of cross-linking with the organic polymer thin film 20 of the device substrate 200. Specifically, the thin film layer 60 can cross-link polyglycidyl methacrylate used in the organic polymer thin film 20 including an amine group (NHx) or a hydroxyl group (OH).

The first method of depositing the thin film layer 60 on the composite layer 50 is first to oxygen plasma treatment the composite layer 50 at a power of 100 W under an oxygen condition of 50 mtorr for 60 seconds. Further, in a state in which the complex layer 50 is mounted on the susceptor of the plasma polymerization reactor, it is put between both electrodes in the vacuum chamber, and the chamber is maintained in a vacuum state. Then, allylamine is charged into the chamber, and the allylamine is plasma-polymerized under a continuous RF discharge at a frequency of 13.56 MHz and a power of 5 W. Here, the pressure of the step of forming the sealing substrate 300 is 100 mtorr. After about 10 minutes, a plasma-polymerized polyallylamine is deposited on the composite layer 50 to a thickness of 100 nm to form a thin film layer 60. As a second method, a monomer containing an amine group or a hydroxyl group is deposited as a polymer film by a chemical vapor deposition method using the initiator described in the first embodiment.

The element substrate 200 and the sealing substrate 300 are bonded together (S200 '). The organic polymer thin film 20 of the element substrate 200 and the thin film layer 60 of the sealing substrate 300 face each other and then a pressure of 1 Pa is applied to the organic polymer thin film 20 And the thin film layer 60 of the sealing substrate 300 are bonded together.

The element substrate 200 and the sealing substrate 300 are heat-treated (S300 '). Specifically, the bonded element substrate 200 and the sealing substrate 300 are heat-treated for 1 to 2 hours while maintaining a temperature of 50 ° C or more and less than 100 ° C. The heat-treated element substrate 200 and the sealing substrate 300 are bonded to the epoxy group of the organic polymer thin film 20 of the organic electroluminescent device 200 and the amine group NHx of the thin film layer 60 of the sealing substrate 300, Or the hydroxyl group (OH) cross-links. A strong adhesive force is formed between the organic polymer thin film 20 of the crosslinked organic electroluminescent device 200 and the thin film layer 60 of the sealing substrate 300 by the heat treatment. Here, the temperature of 50 ° C or more of the heat treatment is a sufficient temperature to allow the epoxy group and the amine group (NHx) or the hydroxyl group (OH) to cross-link, Is a temperature at which the organic electroluminescent device OLED, which is one of the devices, can not be damaged.

Hereinafter, an electronic device including a sealing film manufactured by the sealing film manufacturing method according to the second embodiment will be described with reference to Fig.

8 is a schematic view of an electronic device including a sealing film manufactured by the sealing film manufacturing method according to the second embodiment.

6 to 8, an electronic device including a sealing film manufactured by the sealing film manufacturing method according to the second embodiment includes a substrate 10, an organic electric field element 240, a bonding layer 70, 50).

The substrate 10 may be a flexible substrate, a glass substrate, or the like. Here, the flexible substrate may include polyethylene terephthalate, polymethyl methacrylate, polycarbonate, polyethylene sulfone, and the like.

The organic electric field element 240 is disposed on the substrate 10. The organic electroluminescent device 240 may be an organic light emitting diode (OLED), organic solar cells (OPVs), and organic thin film transistors (OTFTs).

The bonding layer 70 may be a layer in which the organic polymer thin film 20 and the thin film layer 60 are cross-linked, as shown in FIG. Here, the organic polymer thin film 20 may include an epoxy group. In addition, the thin film layer 60 may include an amine group (NHx) or a hydroxyl group (OH). The composite layer 50 may be a layer in which the substrate 10 ', the organic polymer thin film 20 and the inorganic thin film 30 are sequentially formed as shown in FIG. Here, the organic polymer thin film 20 and the inorganic thin film 30 may be of a structure in which the up-and-down relationship is changed or the organic polymer thin film 20 and the inorganic thin film 30 are paired and stacked in a plurality of layers. Here, the organic polymer thin film 20 and the inorganic thin film 30 formed on the composite layer 50 may be formed by the method described in the first embodiment, or may be formed by a known technique. Here, the substrate 10 'may be the same substrate as the substrate 10, or may be another substrate.

As described above, in the sealing film manufacturing method according to the second embodiment, the element substrate 200 including the organic polymer thin film 20 and the sealing substrate 300 are separately formed, and the element substrate 200 and the sealing substrate 300) can be chemically bonded to protect the organic electroluminescent device included in the element substrate 200 from external moisture and oxygen.

Since the encapsulation substrate 300 is formed separately from the element substrate 200 in the encapsulation method of the second embodiment, the organic polymer thin film 20 and the inorganic thin film 30 are deposited on the encapsulation substrate 300 Since the process is independent of the device substrate 200, the organic device included in the device substrate 200 has an advantage of being free from thermal damage due to the process of depositing the organic polymer thin film 20 and the inorganic thin film 30 .

In the sealing film manufacturing method according to the second embodiment, the heat treatment temperature used for bonding the element substrate 200 and the sealing substrate 300 is about 50 to 100 DEG C, which is lower than 500 DEG C used in the chemical vapor deposition The damage caused by heat of the organic electroluminescent device, which may be included in the device substrate 200, can be minimized.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, It will be understood that various changes and modifications may be made without departing from the spirit and scope of the invention. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

10, 10 ': substrate 20: organic polymer thin film
30: inorganic thin film 50: multiple layer
60: thin film layer 70: bonding layer
100: organic-inorganic composite film 200: element substrate
210: first electrode 220: organic light emitting layer
230: second electrode 240: organic field element
300: sealing substrate

Claims (9)

A method for producing an encapsulating film on an organic electric field element,
Forming an encapsulation substrate by depositing a thin film layer on a substrate;
An element substrate forming step of forming an element substrate by depositing an organic polymer thin film on the organic electric field element;
A bonding step of bonding the organic polymer thin film of the element substrate and the thin film layer of the sealing substrate together; And
A heat treatment step of heat-treating the element substrate and the sealing substrate; ≪ / RTI > The method according to claim 1,
In the device substrate forming step,
A coating step of applying a monomer and an initiator to the organic electroluminescent device;
A free radical formation step of pyrolyzing the initiator to form a free radical; And
A step of depositing the organic polymer thin film on the organic electroluminescent device by activating the monomer using the free radical; Lt; / RTI >
Wherein a solvent is not used in the application step, the free radical formation step, and the organic polymer thin film deposition step. 3. The method according to claim 1 or 2,
Wherein the heat treatment step is cross-linked between the organic polymer thin film of the device substrate and the thin film layer of the encapsulation substrate. The method of claim 3,
Wherein the cross-linking is a bond between an epoxy group contained in the organic polymer thin film and an amine group (NHx) or a hydroxyl group (OH) included in the thin film layer. 3. The method according to claim 1 or 2,
Wherein the heat treatment step comprises subjecting the device substrate and the sealing substrate to a heat treatment at a temperature of 50 ° C or more and less than 100 ° C. 3. The method according to claim 1 or 2,
Wherein the sealing substrate further comprises a composite layer between the substrate and the thin film layer. 3. The method according to claim 1 or 2,
Wherein the organic electroluminescent device is an organic light emitting diode (OLED). Board;
An organic field element disposed on the substrate;
A bonding layer disposed on the organic field element; And
A composite layer disposed on the bonding layer; / RTI >
Wherein the bonding layer comprises an epoxy group and an amine group NHx or an epoxy group and a hydroxyl group OH and the epoxy group and the amine group NHx or the epoxy group wherein the epoxy group and the hydroxyl group (OH) are crosslinked. 9. The method of claim 8,
Wherein the organic electroluminescent device is an organic electroluminescent device (OLED).

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