KR20150021166A

KR20150021166A - substrate support Unit

Info

Publication number: KR20150021166A
Application number: KR20130098069A
Authority: KR
Inventors: 배일중; 김윤수
Original assignee: 세메스 주식회사
Priority date: 2013-08-19
Filing date: 2013-08-19
Publication date: 2015-03-02

Abstract

The present invention provides a unit for supporting a substrate, an apparatus and a method having the unit. The substrate processing apparatus includes a chamber for providing a space for processing a process substrate therein, a substrate support unit for supporting the process substrate in the chamber, and a gas supply unit for supplying a process gas to the process substrate, The unit includes a susceptor having a substrate receiving groove formed on an upper surface thereof, a substrate holder which is insertable into the substrate receiving groove and has a circular mounting groove on an upper surface thereof and on which the processing substrate is placed, And a shielding plate for shielding the exposed area of the shielding plate. The blocking member blocks the exposed region of the mounting groove on which the process substrate is seated, so that the process gas can be prevented from entering the exposed region of the mounting groove.

Description

[0001] The present invention relates to a substrate support unit,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for processing a substrate, and more particularly, to a unit for supporting a substrate, and an apparatus and a method having the unit.

Metal organic chemical vapor deposition (MOCVD), which deposits a thin film on a process substrate by using a thermal decomposition reaction of a metal organic compound and a hydrogen compound in a semiconductor device manufacturing process, has been used. In general, a process substrate used in a thin film deposition process may be, for example, sapphire (Al ₂ O ₃ ) and silicon carbide (SiC) substrates used in the manufacture of epi wafers during LED manufacturing processes, A silicon wafer used for manufacturing a circuit (IC), or the like. This metal organic chemical vapor deposition method rotates and heats a susceptor having grooves on which a process substrate is placed, and supplies a process gas to form a thin film on the process substrate.

FIG. 1 shows an example in which a process substrate is placed on a general substrate supporting unit. A plurality of receiving grooves are formed in the susceptor 2, and a substrate holder having a process substrate S inserted therein is placed in each receiving groove. The substrate holder has a circular seating groove, and the processing substrate is placed in the seating groove. When a process substrate S having a flat zone F is inserted into the mounting groove, a partial area A of the bottom surface of the mounting groove is exposed to the outside, and the process by-product is deposited on the exposed area A.

As a result, when the next process substrate is placed in the exposed region (A), the process substrate (S) is tilted by the thickness of the deposited process by-products. As a result, the uniformity of the thin film according to the region of the process substrate S is lowered.

Korea Patent Registration No.: No. 10-0972976

The present invention seeks to provide an apparatus and method for uniformly depositing a thin film on a process substrate.

It is another object of the present invention to provide an apparatus and a method that can prevent a process gas from flowing into an exposed region of a mounting groove into which a process substrate is inserted.

The present invention also provides an apparatus and a method that can prevent the process substrate from being seated in a tilted state.

An embodiment of the present invention provides a unit for supporting a substrate, an apparatus and a method having the unit. The substrate processing apparatus includes a chamber for providing a space for processing a process substrate therein, a substrate support unit for supporting the process substrate in the chamber, and a gas supply unit for supplying a process gas to the process substrate, The unit includes a susceptor having a substrate receiving groove formed on an upper surface thereof, a substrate holder which is insertable into the substrate receiving groove and has a circular mounting groove on an upper surface thereof and on which the processing substrate is placed, And a shielding plate for shielding the exposed area of the shielding plate.

The blocking plate may have a shape corresponding to the exposed region of the seating groove in the state where the processing substrate is placed in the seating groove, and may be located in the exposed region. The process substrate may have a shape having a flat zone in which a part of an edge region of the original plate is cut, and the blocking plate may have a shape corresponding to a shape cut to have the flat zone in the original plate. The upper surface of the blocking plate may be provided to have the same height as the upper surface of the substrate holder. The upper surface of the blocking plate may be provided to have a lower height than the upper surface of the substrate holder. The blocking plate may be detachably provided to the substrate holder in the seating groove. The mounting groove is defined by a bottom surface and an inner surface of the substrate holder, and a mounting groove is formed on the bottom surface. The mounting plate may include a protrusion that can be inserted into the mounting groove. Optionally, the blocking plate may be provided integrally with the substrate holder. And a dummy substrate having a size corresponding to the seating groove.

The substrate support unit includes a susceptor having a substrate receiving groove formed on an upper surface thereof, a substrate holder insertable into the substrate receiving groove and having a circular seating groove on the upper surface thereof, And a blocking plate for blocking an exposed area of the seating groove.

The blocking plate may have a shape corresponding to the exposed region of the seating groove in the state where the processing substrate is placed in the seating groove, and may be located in the exposed region. The blocking plate may be detachably provided to the substrate holder in the seating groove.

A method of processing a process substrate using the substrate processing apparatus, comprising: placing a process substrate in the seating groove; providing the blocking plate in an exposed region of the seating groove to block the exposed region; And the process substrate is processed.

Wherein a plurality of the substrate receiving grooves are provided, and each of the substrate receiving grooves is inserted with the substrate holder, wherein an exposed region of the seating groove of the first substrate holder provided with the process substrate among the substrate holders is blocked by the blocking plate , The exposed region of the seating groove of the substrate holder not provided with the process substrate can block the dummy substrate. The blocking plate may be detachably provided to the substrate holder. The upper surface of the blocking plate may be provided lower than the upper surface of the first substrate holder, and the processing substrate may be positioned in the seating groove of the first substrate holder such that the side thereof faces the side surface of the blocking plate.

According to the embodiment of the present invention, since the blocking member blocks the exposed region of the mounting groove on which the processing substrate is seated, the process gas can be prevented from flowing into the exposed region of the mounting groove.

According to the embodiment of the present invention, since the process gas is prevented from entering the exposed region of the mounting groove, it is possible to prevent the process substrate from being seated in a tilted state, so that the thin film can be uniformly deposited on the process substrate .

According to the embodiments of the present invention, various types of process substrates can be placed in the seating grooves.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a plan view showing a process substrate mounted on a conventional substrate support unit.
2 is a cross-sectional view schematically showing a substrate processing apparatus according to a first embodiment of the present invention.
3 is a plan view schematically showing the susceptor of Fig.
4 is a cross-sectional view of the substrate holder of FIG. 2;
FIG. 5 is a view showing a state in which a blocking plate and a process substrate are inserted into the substrate holder of FIG. 4;
FIG. 6 is a perspective view showing the substrate holder and the shielding plate of FIG. 5;
Fig. 7 is a cross-sectional view showing the gas supply unit of Fig. 2;
8 is a view showing a substrate holder and a dummy substrate according to a second embodiment of the present invention.
9 is a view showing a shielding plate and a process substrate according to a third embodiment of the present invention.
10 is a view showing a substrate holder and a shield plate according to a fourth embodiment of the present invention.
11 is a view showing a substrate holder and a shielding plate according to a fifth embodiment of the present invention.
12 is a view in which a dummy substrate is placed on the substrate holder of Fig.

Hereinafter, a substrate processing apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. Therefore, the shapes and the like of the illustrated components in the drawings are exaggerated in order to emphasize a clear explanation.

According to an embodiment of the present invention, the substrate processing apparatus is a metal organic chemical vapor deposition apparatus for manufacturing an LED, and the process substrate to be provided may be a sapphire substrate and a silicon carbide substrate. Alternatively, the substrate processing apparatus may be a metal organic chemical vapor deposition apparatus for manufacturing semiconductor chips, and the process substrate may be a silicon wafer.

The process substrate may also be a substrate on which a part of the edge region is cut. The cut portion of the process substrate may be a flat zone or a notch.

Next, the substrate processing apparatus of this embodiment will be described in detail with reference to Figs. 2 to 14 as an example.

2 is a view showing a substrate processing apparatus according to a first embodiment of the present invention. 2, the substrate processing apparatus 1000 includes a chamber 200, a substrate support unit 300, a shutoff plate 100, a liner unit 400, a heater 500, a gas supply unit 600, And a gas exhaust unit 700. The chamber 200 provides a space in which process processing is performed. The substrate support unit 300 supports the process substrate S and the liner unit 400 protects the inner walls of the chamber 200. The heater 500 heats the process substrate S. The gas supply unit 600 supplies a process gas to the process substrate S and the gas exhaust unit 700 exhausts the process gas provided in the process substrate S process out of the chamber 200. Hereinafter, each configuration will be described in detail.

A space in which the process substrate S is processed is formed in the chamber 200. The chamber 200 is combined with the upper wall 210, the side wall 220, and the lower wall 230 to form an inner space. The top wall 210 may open the interior of the chamber 200. When the operator maintains the apparatus provided inside the chamber 200, the operator opens the top wall 210. In addition, when the process substrate S enters and exits the chamber 200, the top wall 210 can be opened. The chamber 200 may be provided with a metal material having a low heat resistance. The chamber 200 may be made of stainless steel.

The substrate support unit 300 supports the process substrate S within the chamber 200. The substrate supporting unit 300 can simultaneously support a plurality of process substrates S. According to an embodiment, the substrate support unit 300 includes a susceptor 310, a substrate holder 320, and a susceptor driver 330.

3 is a plan view schematically showing the susceptor of Fig. Referring to FIG. 3, the susceptor 310 is located within the chamber 200. The susceptor 310 is an original plate having a predetermined thickness, and its upper surface has a larger radius than the bottom surface, and the side surface can be inclined downward. As shown in FIG. 3, a central groove 312 and a substrate receiving groove 311 are formed on the upper surface of the susceptor 310. Each of the central groove 312 and the substrate receiving groove 311 may have a circular groove and a predetermined depth. The central groove 312 is formed in the center region of the upper surface of the susceptor 310. The end of the nozzle 610 may be positioned in the central groove 312.

A plurality of substrate receiving grooves 311 are provided. The substrate receiving grooves 311 are formed in the upper surface edge region of the susceptor 310. The substrate receiving grooves 311 are formed in the periphery of the central groove 312. The substrate receiving grooves 311 may be arranged in various shapes. In one example, the substrate receiving grooves 312 are provided in ten, and each of the substrate receiving grooves 312 may be arranged in a ring shape in combination with each other. Each of the substrate receiving grooves 312 may be provided with the same distance from the central groove 312. The gap between the substrate receiving grooves 312 adjacent to each other can be provided equally.

Projections 104 and 313, an ejection hole 314, and a guide groove 315 are formed on the bottom surfaces of the substrate receiving grooves 311. The projections 104 and 313 protrude to a predetermined height from the center of the bottom surface of the substrate receiving groove 311. A plurality of injection holes 314 are formed around the projections 104 and 313. The injection holes 314 are connected to gas supply passages 317 for supplying gas, and inject gas. The injected gas floats the substrate holder 320 placed in the substrate receiving groove 311.

The guide groove 315 guides the flow of gas injected from the injection hole 314. The guide grooves 315 are connected to the injection holes 314, respectively. The guide groove 315 has a predetermined length and is provided round. The gas injected in the injection hole 314 moves along the guide groove 315 and rotates the floated substrate holder 320.

The susceptor driving unit 330 rotates and elevates the susceptor 310. The susceptor driving unit 330 includes a rotating shaft 331 and a motor 332. The rotating shaft 331 supports the susceptor 310 at a lower portion of the susceptor 310. The motor 332 rotates and lifts the rotating shaft 331. According to the embodiment, the motor 332 can rotate the susceptor 310 while the substrate holder 320 is rotated.

4 is a cross-sectional view of the substrate holder of FIG. 2; Referring to FIG. 4, the substrate holder 320 is accommodated in the substrate receiving groove 311 with a thin disk. On the upper surface of the substrate holder 320, a seating groove 321 is formed. The seating groove 321 is formed to a predetermined depth and accommodates the process substrate S therein. The seating groove 321 can be defined by an inner surface and a bottom surface of the substrate holder 320. According to one example, the seating groove 321 may be provided in a circular shape. The seating groove 321 may have a radius that is greater than or equal to the radius of the process substrate S. [ A fixing groove 322 is formed on the bottom surface of the substrate holder 320. The protrusions 104 and 313 formed on the bottom surface of the substrate receiving groove 311 can be inserted into the fixing groove 322. The substrate holder 320 may be provided with a material having a high electrical conductivity. The substrate holder 320 may be provided with a graphite material. A plurality of substrate holders 320 are provided and accommodated in each of the substrate receiving grooves 311.

A mounting groove 323 is formed on the bottom surface of the substrate holder 320 defining the seating groove 321. The mounting groove 323 is formed in the edge area at the bottom surface of the substrate holder 320. [ The mounting groove 323 fixes the position of the shield plate 100 to be described later.

According to one example, the process substrate S may be formed with a flat zone F in its edge region. The blocking plate 100 blocks the exposed region (A in Fig. 1) of the seating groove 321 in a state where the process substrate S is placed in the seating groove 321. [ FIG. 5 is a view showing a state in which a blocking plate and a process substrate S are inserted into the substrate holder of FIG. 4, and FIG. 6 is a perspective view showing the substrate holder and the blocking plate of FIG. Referring to Figs. 5 and 6, the shield plate 100 includes a body 102 and a projection 104. Fig. The body 102 is positioned in the seating groove 321 so that the mounting groove 323 formed on the bottom surface of the seating groove 321 is obscured. The body 102 has a shape and size corresponding to the portion cut from the disk to form the flat zone F in the process substrate S. [ Thus, one side of the body 102 is provided with a rounded curve, and the other side is provided with a straight line. According to an example, the body 102 mounted on the substrate holder 320 may be provided such that the upper surface thereof is flush with the upper surface of the substrate holder 320. The size of the open area of the seating groove 321 in the state where the blocking plate 100 is placed can be provided in a size corresponding to the process substrate S. [

The protrusion 104 is provided so as to protrude downward from the bottom surface of the shield plate 100. The projection 104 is provided in a shape corresponding to the mounting groove 323 and is provided so as to be insertable into the mounting groove 323. [ The projection 104 may be inserted into the mounting groove 323 to mount the body 102 to the substrate holder 320.

Referring again to FIG. 2, the liner unit 400 is located inside the chamber 200 and protects the inner wall of the chamber 200. The liner unit 400 blocks the process gas from adhering to the inner wall of the chamber 200 or from reacting with the inner wall of the chamber 200. The liner unit 400 includes an upper liner 410, a side liner 420, and a fastening member 430.

The upper liner 410 is a thin plate and is disposed parallel to the upper surface of the susceptor 310 at the top of the susceptor 310. The top liner 410 is spaced a predetermined distance from the top wall 210 of the chamber 200. The upper liner 410 has an area larger than the upper surface of the susceptor 310. According to the embodiment, the upper liner 410 is a disk and has a larger radius than the upper surface of the susceptor 310. [ An insertion hole is formed at the center of the upper liner 410. The nozzle 610 is located in the insertion hole.

The side liner 420 is opened in its upper and lower surfaces and has a cylindrical shape in which a space is formed therein. The side liner 420 supports the top liner 410 at the bottom of the top liner 410. The side liner 420 has a radius corresponding to the top liner 410 and a top liner 410 is placed on top. The side liner 420 is disposed to surround the periphery of the susceptor 310. The space defined by the top liner 410 and the side liner 420 is provided to a processing space 422 where process processing for the process substrate S is performed.

The upper liner 410 and the side liner 420 are made of a material superior in heat resistance to the chamber 200. The upper liner 410 and the side liner 420 may be provided with a graphite material.

The fastening member 430 fixes the upper liner 410 to the upper wall 210 of the chamber 200. The fastening member 430 includes a flange 431 and a bolt 432. The flange 431 is fastened to the inner end of the upper liner 410 with the insertion hole formed therein. The bolt 432 engages the flange 431 with the top wall 210 of the chamber 200. And moves integrally with the upper liner 410 and the upper wall 210 of the chamber 200 by the fastening member 430. When the top wall 210 opens the interior of the chamber 200, the top liner 410 moves with the top wall 210.

The heater 500 is located below the susceptor 310. The heater 500 is spaced a predetermined distance from the bottom surface of the susceptor 310. The heater 500 is provided as a coil, and wound around the rotary shaft 331 a plurality of times in a spiral shape at the same height. The heat generated in the heater 500 is transferred to the process substrate S through the susceptor 310 and the substrate holder 320 to heat the process substrate S. The heater 500 heats the process substrate S to a high temperature. According to an embodiment, the process substrate S may be heated to 700 占 폚 to 1300 占 폚.

The gas supply unit 600 supplies a process gas and a purge gas into a space between the upper liner 410 and the susceptor 310.

Fig. 7 is a view showing the gas supply unit in Fig. 2; 7, the gas supply unit 600 includes a nozzle 610, a first gas supply line 641, a second gas supply line 642, and a purge gas supply line 643.

The nozzle 610 is provided downward from the center of the upper wall 210 of the chamber 200 and its end is located in the central groove 312 of the susceptor 310. The nozzle 610 may be supported on the top wall 210 of the chamber 200 at the top. Purge gas jetting openings 621 and 622 and process gas jetting openings 623 to 625 may be formed on the side wall of the nozzle 610.

The purge gas jetting openings 621 and 622 may be formed in a region adjacent to the nozzle 610 region adjacent to the upper liner 410 and an area adjacent to the end of the nozzle 610, respectively. A plurality of purge gas jetting openings 621 and 622 are formed along the circumference of the nozzle 610. The purge gas jetting openings 621 and 622 communicate with the third space 613. According to one example, the purge gas injection port 622 formed in the region adjacent to the end of the nozzle 610 may be located in the central groove 312.

The process gas injection ports 623 to 625 are divided into a first gas injection port 623 for injecting the first gas and a second gas injection port 624 and 625 for injecting the second gas. The first gas injection opening 623 is formed between the purge gas injection openings 621 formed at the upper portion and the purge gas injection openings 622 formed at the lower portion. A plurality of first gas ejection openings 623 are formed along the periphery of the nozzle 610. The second gas ejection openings 624 and 625 are provided in the region between the purge gas ejection openings 621 and the first gas ejection openings 623 formed at the upper portion and the region between the first gas ejection openings 623 and the purge gas ejection openings 622 Respectively. A plurality of second gas jet openings 624 and 625 are formed along the circumference of the nozzle 610. The first and second gases injected from the first gas injection port 623 and the second gas injection port 624 and 625 are mixed in the process space 422 and deposited on the process substrate S.

The first gas supply line 641 is connected to the first gas injection port 623. The first gas supply line 641 supplies the first gas to the first gas injection port 623. The first gas may be a Group III element gas which is an organic metal. The first gas may be trimethyl gallium (TMG) or trimethyl aluminum (TMA).

The second gas supply line 642 is connected to the second gas ejection openings 624 and 625. The second gas supply line 642 supplies the second gas to the second gas injection openings 624 and 625. The second gas may be provided as a hydride of a Group V element. The second gas may be phosphine (PH ₃ ), arsenic hydride (AsH ₃ ), or ammonia (NH ₃ ).

The purge gas supply line 643 is connected to the purge gas injection ports 621 and 622. The purge gas supply line 643 supplies purge gas to the purge gas injection openings 621 and 622. The purge gas may be nitrogen gas (N ₂ ).

Referring again to FIG. 2, the gas exhaust unit 700 exhausts the gas staying in the processing space 422 after processing the processing substrate S out of the chamber 200. Referring to FIG. 2, the gas exhaust unit 700 includes an exhaust plate 710 and an exhaust pipe 720. The exhaust plate 710 is a ring-shaped plate and is provided along the circumference of the susceptor 310. The upper surface of the exhaust plate 710 may correspond to the lower surface of the susceptor 31 or lower. A side liner 420 is placed on the upper surface of the exhaust plate 710. An exhaust hole 711 is formed in the upper surface area of the exhaust plate 710 inside the area where the side liner 420 is placed. A plurality of exhaust holes 711 are formed along the upper surface of the exhaust plate 710.

An exhaust passage 712 is formed in the exhaust plate 710. The exhaust passage 712 is formed in a ring shape along the circumference of the exhaust plate 710 and communicates with the exhaust holes 711.

The vacuum pressure applied from the vacuum pump is applied to each of the exhaust holes 711 via the exhaust flow path 712. Since the vacuum pressure passes through the exhaust passage 712, the vacuum pressure can be uniformly applied to each of the exhaust holes 711. The vacuum pressure applied to the exhaust holes 711 is applied to the processing space 422 and the gas staying in the processing space 422 flows into the exhaust holes 711. [ The gas can be uniformly introduced into each of the exhaust holes 711. [

Next, a method of processing the process substrate S using the above-described substrate processing apparatus will be described. A shield plate 100 is mounted on each of the seating grooves 321 of the substrate holders 320 and the process substrate S is inserted into the seating grooves 321 so that the flat zone F faces the shield plate 100 . The shield plate 100 and the substrate holders 320 into which the process substrate S is inserted are inserted into the respective substrate receiving grooves. When the inner space of the chamber is sealed, the gas exhaust unit 700 keeps its internal space in a vacuum state. The heater 500 heats the susceptor 310 to heat the process substrate S that is seated on the susceptor 310 to a predetermined temperature. The susceptor 310 is rotated by the rotation axis 330 and the nozzle 610 supplies a process gas onto the process substrate S placed on the susceptor 310 to deposit a thin film on the process substrate S do.

As described above, the susceptor 310 is provided with a plurality of substrate receiving grooves 310. The process substrate S may be provided in a part of the substrate receiving groove 310 according to the number of the process substrates S in process and the process substrate S may not be provided in the remainder. So that process by-products can be introduced into the substrate holder 320 where the process substrate S is not provided. The substrate processing apparatus may further include a dummy substrate 120 for preventing the entry of the process by-products into the substrate holder 320 where the process substrate S is not provided. 8 is a view showing a substrate holder and a dummy substrate according to a second embodiment of the present invention. Referring to FIG. 8, the dummy substrate 120 is provided to have a circular plate shape. The dummy substrate 120 is provided so as to have a size corresponding to the seating groove 321 of the substrate holder 320. [ According to one example, a portion of each substrate receiving groove 311 is provided with first substrate holders with a process substrate S inserted therein, and the remainder with second substrate holders not including the process substrate S . In this case, the first substrate holder 320 may be provided with the shielding plate 100 and the process substrate S, and the second substrate holder 320 may be provided with the dummy substrate 120. Accordingly, the dummy substrate 120 can prevent the process by-products from flowing into the bottom surface of the second substrate holder 320 to be deposited.

In the first embodiment described above, the process substrate S on which the flat zone F is formed has been described. However, according to the third embodiment of the present invention, the process substrate S may be formed with a notch of "V" shape in the edge region as shown in Fig. The blocking plate 100a may be provided in a shape corresponding to the shape of the notch so as to block the area exposed by the notches of the process substrate S. [

According to the fourth embodiment of the present invention, the shielding plate 100b may be integrally provided with the inner surface of the substrate holder 320 as shown in FIG. In this case, the blocking plate 100b may be provided with the same material as the substrate holder 320. [ The dummy substrate 120 may be provided so as to have the same shape as the process substrate S. The dummy substrate 120 may be provided in a shape in which a flat zone F is formed in a part of the edge region in a circular shape.

According to the fifth embodiment of the present invention, the blocking plate 100c can be provided integrally with the inner surface of the substrate holder 320. [ The upper surface of the blocking plate 100c may be provided lower than the upper surface of the substrate holder 320 as shown in FIG. The process substrate S may be provided in the seating groove 321 of the substrate holder 320 so that one side thereof faces the shield plate 100. [ According to an example, the upper surface of the blocking plate 100c may be provided at the same height as the upper surface of the process substrate S inserted into the substrate holder 320, or may be provided at a lower level. Optionally, the blocking plate 100c may be provided detachably to the substrate holder 320. [

When the shield plate 100c of the fifth embodiment is used, the dummy substrate 120a may be provided in a disk shape corresponding to the size of the seating groove 321 when viewed from above as shown in FIG. The dummy substrate 120a may be placed on the upper surface of the shield plate 100 in the seating groove 321. [

100: blocking plate 120: dummy substrate
300: substrate support unit 310: susceptor
311: substrate receiving groove 320: substrate holder
600: gas supply unit

Claims

A chamber for providing a space for processing the processing substrate therein;
A substrate support unit for supporting the process substrate in the chamber; And
And a gas supply unit for supplying a process gas to the process substrate,
Wherein the substrate supporting unit comprises:
A susceptor having a substrate receiving groove formed on an upper surface thereof;
A substrate holder which is insertable into the substrate receiving groove and in which a circular mounting groove on which the processing substrate is placed is formed on an upper surface thereof;
And a blocking plate for blocking an exposed region of the seating groove in a state where the processing substrate is placed.

The method according to claim 1,
Wherein the blocking plate has a shape corresponding to an exposed region of the seating groove in a state where the process substrate is placed in the seating groove and is located in the exposed region.