KR20150010056A

KR20150010056A - gas scrubber with parallel type

Info

Publication number: KR20150010056A
Application number: KR1020130084453A
Authority: KR
Inventors: 김재용
Original assignee: 김재용
Priority date: 2013-07-18
Filing date: 2013-07-18
Publication date: 2015-01-28

Abstract

The present invention provides a parallel-type gas scrubber for cleaning various kinds of gases exhausted from semiconductor manufacturing equipment, in which burning chambers are combined in parallel with each other. According to an embodiment of the present invention, the parallel-type gas scrubber which cleans gas exhausted from a process chamber of semiconductor manufacturing equipment includes: a plurality of gas input lines having an input port connected to the process chamber of the semiconductor manufacturing equipment; burning chambers parallel to each other to burn the gas introduced through the gas input lines, wherein the number of burning chambers corresponds to that of the process chambers; a cooling chamber including gas exhausting lines installed on a lower side of the burning chamber to cool the burned exhausted gas and to collect the cooled exhausted gas into one place such that the collected gas is exhausted to the outside; and a drain chamber installed on one side of the cooling chamber to store and drain a secondary by-product generated during the cleaning process of exhaust gases.

Description

A gas scrubber of parallel type (gas scrubber with parallel type)

The present invention relates to a parallel type gas scrubber, and more particularly, to a parallel type gas scrubber capable of using burning chambers of a gas scrubber for purifying various exhaust gases emitted from semiconductor manufacturing equipment in parallel.

In general, when a gas is purified by passing an ignitable gas or a toxic gas discharged from a semiconductor manufacturing process through a gas scrubber, a gas scrubber of a wetting type and a burning type is used.

The wetting type scrubber is a structure for cleaning and cooling the exhaust gas by using water. Since the wetting type scrubber has a relatively simple structure, the wetting type scrubber can be easily manufactured and can have a large capacity. On the other hand, the treatment of the water-insoluble exhaust gas is not possible, and it is inadequate for the treatment of exhaust gas containing a hydrogen group having particularly high ignitability.

The burning scrubber is used for burning a burner such as a hydrogen burner by directly passing the exhaust gas through the burner or by forming a high-temperature chamber using a heat source, passing the exhaust gas through the burner, Structure. Such a burning type scrubber has an excellent effect in the treatment of flammable gas, but it is not suitable for the treatment of unburned waste gas.

On the other hand, since the semiconductor manufacturing process is performed at a high temperature higher than room temperature, a mixed gas scrubber combining a wet scrubber and a burning scrubber is used so that the exhaust gas can be cleaned and the exhaust gas can be cooled at the same time.

A gas scrubber disclosed in Patent Application No. 10-2008-0063516 (Jul. 1, 2008) is provided with a burning chamber for burning an exhaust gas to be introduced, a cooling chamber for cooling the burned exhaust gas and filtering the harmful substances contained in the exhaust gas And a drain chamber for storing moisture generated during the process.

The mixed gas scrubber has a structure in which the exhaust gas discharged from the semiconductor manufacturing equipment is firstly burnt to remove the ignitable gas and the explosive gas, and then the second gas is contained in the water tank to dissolve the water-soluble toxic gas in the water.

In the mixed gas scrubber, the amount of the exhaust gas (H 2, NH 3, PH 3, AsH 3, etc.) discharged during the semiconductor manufacturing process is very large in the semiconductor manufacturing equipment, in particular, the metal organic chemical vapor deposition (MOCVD) do.

As a result, a single gas scrubber provided per process chamber of the MOCVD equipment is used as one set, and the exhaust gas treatment capacity is limited. At this time, since the MOCVD equipment has one to four process chambers and the process chambers are additionally used if necessary, four gas scrubbers are required when four process chambers are provided in the MOCVD equipment.

As described above, since one gas scrubber is connected to each of the process chambers of the MOCVD equipment, a lot of installation space is required to install the gas scrubbers, and the amount of utility required in the exhaust gas treatment equipment is increased The cost is increased.

In addition, the number of management points of the exhaust gas treatment equipment is increased, and a large number of managers are required, resulting in an increase in labor costs. In addition, there is a problem that an initial cost burden due to purchase of a plurality of gas scrubbers must be paid.

In the embodiment of the present invention, when the exhaust gas discharged from equipment for manufacturing LEDs and the like is purified, a burner chamber is formed in parallel with the number of process chambers of the equipment to form a gas scrubber, It is associated with a parallel gas scrubber that reduces initial cost of purchase and reduces A / S costs by reducing the management points of the exhaust gas treatment equipment.

The embodiment of the present invention minimizes the space restriction for installing the gas scrubber because the number of gas scrubbers used is reduced and the amount of utilities required by the exhaust gas treatment equipment can be reduced by half compared to the conventional system, Of the gas scrubber.

In a parallel type gas scrubber according to an embodiment of the present invention,

A gas scrubber for purifying an exhaust gas discharged from a process chamber of a semiconductor manufacturing equipment, comprising:

A plurality of gas inlet lines to which an inlet port is connected to a process chamber of the semiconductor manufacturing equipment;

A burning chamber configured in parallel with the number of the process chambers and burning the exhaust gas flowing through the gas inlet line;

A cooling chamber installed below the burning chamber to cool the exhausted exhaust gas, and a gas discharge line for collecting the cooled exhaust gas and discharging the exhausted gas to the outside;

And a drain chamber which is installed at one side of the cooling chamber and stores and drains the secondary byproducts generated in the exhaust gas purifying process.

According to a preferred embodiment, at least two or more of the burning chambers are configured in parallel to form a packaged burning chamber unit.

The embodiment of the present invention configured as described above has the following advantages.

In the case of purifying the exhaust gas discharged from equipment for manufacturing LEDs and the like, the gas scrubber is constituted by combining the burning chambers in parallel in correspondence with the number of process chambers of the equipment, thereby reducing the initial cost of purchasing the gas scrubber, The management points of the exhaust gas treatment equipment can be reduced, thereby reducing the A / S cost.

In addition, since the number of gas scrubbers to be used is reduced, the space restriction for installing the gas scrubber is reduced, and the amount of utilities required for the exhaust gas treatment equipment can be reduced by half compared with the conventional system, thereby reducing the equipment operation cost.

FIG. 1 is a schematic view of an apparatus to which a gas scrubber according to an embodiment of the present invention is applied,
FIG. 2 is a block diagram of a parallel-type gas scrubber according to an embodiment of the present invention; FIG.
FIG. 3 is a use state of a parallel type gas scrubber according to an embodiment of the present invention,
4 is a schematic configuration diagram of a chamber for purifying an exhaust gas in a parallel type gas scrubber according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings, which are intended to illustrate the present invention in order to facilitate those skilled in the art to which the present invention pertains, The present invention is not limited thereto.

In the parallel type gas scrubber according to an embodiment of the present invention shown in FIGS. 1 to 4,

A plurality of gas inlet lines (14, 15, 16, 17) through which inlet ports are connected to the process chambers (10, 11, 12, 13) of the semiconductor manufacturing equipment;

And a burning chamber 18 (18a, 18b) for burning the exhaust gas flowing through the gas inlet lines 14, 15, 16, 17, , 18b, 18c, 18d);

A cooling chamber 18 is provided under the burning chambers 18a, 18b, 18c and 18d to cool the exhaust gas discharged from the burning chamber 18, and a gas discharge line 19 for collecting the cooled exhaust gas and discharging the exhausted gas to the outside is formed. (20; 20a, 20b, 20c, 20d);

And a drain chamber 21 installed at one side of the cooling chamber 20 (20a, 20b, 20c, 20d) for storing and draining secondary byproducts generated in the exhaust gas purifying process.

At least two or more of the burning chambers 18a, 18b, 18c and 18d are formed in parallel to form packaged burning chamber units S1 and S2.

In the drawings, reference character C denotes a controller for controlling the operation of the gas scrubber by constituting the exhaust gas treatment equipment (A).

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an example of using a gas scrubber according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

As shown in FIGS. 1 to 4, exhaust gases (H2, NH3, PH3, AsH3, etc.) discharged from the process chambers 10, 11, 12 and 13 of the MOCVD equipment for manufacturing LEDs are supplied to the gas inlet line 14, 15, 16, 17) into the burning chamber 18.

That is, when various process gases used in a process for manufacturing a semiconductor including LED and the like are introduced into the burning chamber 18 (18a, 18b, 18c, 18d), the high temperature 1100 ° C), the exhaust gas flowing into the burning chamber 18 is heated while reacting with the air.

At this time, the heated exhaust gas generates water when hydrogen and ammonia gas react with air. H 2 O 2 → H 2 O and 4 NH 3 + 5 O 2 → 6 H 2 O + 4 NO.

Meanwhile, the burning chamber 18 is formed in parallel with the corresponding number of the process chambers 10, 11, 12, and 13 of the MOCVD equipment. That is, when four MOCVD equipment are provided as the process chambers 10, 11, 12 and 13, four burning chambers 18a, 18b, 18c and 18d are combined in parallel in one set of gas scrubber D . Therefore, a large amount of exhaust gas generated in the MOCVD equipment 10, 11, 12, 13 and flowing through the gas inflow lines 14, 15, 16, 17 is purified from one set of gas scrubbers D .

As described above, the exhaust gas discharged from the semiconductor manufacturing equipment is burned in the burning chamber 18 in the gas scrubber, the burned exhaust gas is cooled in the cooling chamber 20, and the secondary by-products discharged from the cooling chamber are collected and discharged The configuration of the drain chamber 21 is the technical content used in the gas scrubber disclosed in the above-mentioned Japanese Patent Application No. 63516, so that detailed description of these structures will be omitted.

Therefore, the initial cost of purchasing the gas scrubber can be reduced, and the management point of the exhaust gas treatment equipment (A) can be reduced, thereby reducing maintenance cost and time, thereby improving productivity. The amount of utility gas (B) required by the exhaust gas treatment equipment (A) is reduced to 1/2 of that of the conventional system without being limited by the space for installing the gas scrubber, Cost can be reduced.

The exhaust gas from which the explosive and ignitable gases have been removed by the burning chamber 18 is introduced into the cooling chambers 20 (20a, 20b, 20c, 20d) provided below the burning chambers 18a, 18b, 18c, do. The high-temperature exhaust gas is cooled (the exhaust gas is maintained at about 60 ° C) by the mutual heat exchange action between the cooling water accommodated in the absorber installed in the cooling chamber and the cooling water accommodated in the water-cooled jacket, and hydrogen or ammonia gas Etc. are converted into water by reacting with oxygen, and secondary byproducts such as water flow into the drain chamber 21.

The exhaust gas cooled by the cooling chamber 20 is collected in one place through the gas discharge line 19 and discharged to the outside.

Secondary byproducts including water flowing into the drain chamber 21 are accumulated according to the exhaust gas purifying process and are discharged to the outside by the drain pump 22 which is operated when the accumulated by- The secondary by-products in the drain chamber 21 can maintain a predetermined water level.

10, 11, 12, 13; Process chamber
14, 15, 16, 17; Gas inflow line
18; Burning chamber
19; Gas discharge line
20; Cooling chamber
21; Drain chamber
S1, S2; Packaged burning chamber unit

Claims

A gas scrubber for purifying an exhaust gas discharged from a process chamber of a semiconductor manufacturing equipment, comprising:
A plurality of gas inlet lines to which an inlet port is connected to a process chamber of the semiconductor manufacturing equipment;
A burning chamber configured in parallel with the number of the process chambers and burning the exhaust gas flowing through the gas inlet line;
A cooling chamber provided below the burning chamber for cooling exhausted combustion gas, and a gas discharge line for collecting cooled exhaust gas in one place and discharging the exhaust gas to the outside;
And a drain chamber installed at one side of the cooling chamber for storing and draining secondary byproducts generated in the exhaust gas purifying process.

The gas scrubber of claim 1, wherein at least two of the burning chambers are configured in parallel to form a packaged burning chamber unit.