KR20150002803A - Metal material for electronic component - Google Patents

Abstract

Provided is a metallic material for electronic parts having a high in-plane sliding abrasion resistance, a high interpolation performance, a low whisker resistance and a low insertion force. A layer of Sn, In, or an alloy thereof is formed on a substrate, and a layer B of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir, or an alloy thereof is formed between the substrate and the layer A And a C layer composed of one or more selected from the group consisting of Ni, Cr, Mn, Fe, Co, and Cu is formed between the substrate and the B layer, and the thickness of the A layer is 0.01 The thickness of the C layer is 0.05 占 퐉 or more, and the ratio of the thickness of the A layer / the thickness of the B layer is 0.02 to 4.00, and the thickness of the B layer is 0.05 to 0.5 占 퐉. .

Description

[0001] METAL MATERIAL FOR ELECTRONIC COMPONENT [0002]

A connector that is a connecting part for electronic appliances for consumer use and automotive electronic equipment is made of a material obtained by plating Ni or Cu on the surface of brass or phosphor bronze and further plating Sn or Sn alloy thereon. Sn or Sn alloy plating generally requires characteristics of low contact resistance and high solder wettability. Recently, it has also been required to reduce the insertion force when male terminals and female terminals are formed by press working. In addition, whiskers that are needle-shaped crystals that cause problems such as short-circuiting may occur on the surface of the plating in the manufacturing process, and it is also necessary to suppress the occurrence of whiskers.

In addition, depending on the connector (in particular, connection equipment for automobile electronic equipment), high in-plane sliding abrasion resistance and high-interpolation voicing (contact resistance does not increase even when male and female terminals are repeatedly fitted and detached) Is also required.

On the other hand, in Patent Document 1, Ag or an Ag alloy is partially coated on a substrate made of Ni, Co or an alloy thereof with a surface layer of 0.05 m or more in thickness from the surface, and Ag or Ag alloy Layered material is coated with a layer of In, Zn, Sn, Pd or an alloy thereof in a thickness of 0.01 to 1.0 mu m. According to this, it is described that excellent solderability as an electrical material and connectivity in mechanical electrical connection can be maintained over a long period of time.

Patent Document 2 discloses a method of forming a first coating layer of Ni, Co, or an alloy thereof on the surface of a Cu or Cu alloy base material, forming a second coating layer of Ag or Ag alloy on the surface thereof, Or a Sn alloy coating material having a Sn alloy coating layer formed thereon. According to this, it is described that regardless of the use at a high temperature, there is no oxidation discoloration of the surface, an increase in contact resistance is small, and a Sn or Sn alloy coating material excellent in appearance and contact properties can be provided over a long period of time have.

Patent Document 3 discloses a method in which a first coating layer of Ni, Co, or an alloy thereof is formed on the surface of a Cu or Cu alloy base material, a second coating layer of Ag or Ag alloy is formed on the surface thereof, Or a Sn solidified coating layer of a Sn alloy is formed on the surface of the Sn-Sn alloy coating material. According to this, regardless of the use at a high temperature, there is no oxidation discoloration of the surface and an increase in contact resistance is small, and it is possible to provide a Sn or Sn alloy coating material having excellent appearance and contact properties over a long period of time have.

Patent Document 4 discloses that (a) is any of metal thin films for grounding selected from the group consisting of palladium, platinum, bismuth, indium, nickel, zinc, titanium, zirconium, aluminum, chromium and antimony, And (b) forming a plating film of tin or a tin alloy on the metal thin film for undercoating, wherein a pre-treatment method for preventing tin whisker is provided. According to this, it is described that tin whiskers can be effectively prevented by a simple operation in a tin-based coating film formed to secure solderability and the like on the surface of the object to be cast including the copper-based substrate.

Patent Document 5 discloses a silver plating structure obtained by forming a silver plating layer on the surface of a plating substrate and further forming a plating layer of tin or indium or zinc having a thickness of 0.001 to 0.1 탆 on the surface of the silver plating layer. A plating structure is disclosed. According to this, there is provided a light-emitting element containing support which is excellent in heat resistance and in which the reflectance is not lowered by silver sulfide to a small extent, and a coating method for electric parts having an inherent luster of silver, Can be provided.

Japanese Patent Application Laid-Open No. 61-124597 Japanese Unexamined Patent Application Publication No. 1-306574 Japanese Unexamined Patent Application Publication No. 2-301573 Japanese Laid-Open Patent Publication No. 2003-129278 Japanese Laid-Open Patent Publication No. 2011-122234

However, the techniques described in Patent Documents 1 to 5 can not sufficiently satisfy the characteristics such as the resistance to abrasion due to sliding, the interpolation performance, the low whisker property, and the low-frequency vibrational property.

As described above, the conventional metallic material for electronic parts having a Sn / Ag / Ni underlying plating structure has problems with respect to abrasion resistance, intrinsic vibra- tion, low whisker property, and low-sputtering property. It was not.

An object of the present invention is to provide a metallic material for electronic parts having a micro-sliding abrasion resistance, an internal vibration, a low whisker property and a low-sputtering property, and a manufacturing method thereof.

Further, the micro-sliding wear resistance refers to a property that the contact resistance does not increase even when the fitting portion is micro-sliding (the sliding distance is 1.0 mm or less) in the connector in which male and female terminals are fitted.

The interpolation and vocalization refers to a property that the contact resistance of the connector does not increase even if the male and female terminals are repeatedly inserted and removed a plurality of times.

The whisker property refers to a property in which whiskers do not easily occur.

The term "low-pass sound" refers to low insertion force generated when male and female terminals are fitted.

As a result of intensive investigations, the inventors of the present invention have found that a C layer, a B layer, and an A layer made of a predetermined metal are sequentially formed on a substrate, Of the present invention can be manufactured by controlling the ratio of the ratio or the amount of the metal particles to a predetermined range so as to produce a metallic material for electronic parts having both a high in-plane sliding abrasion resistance, a high interpolation performance, a low whisker property and a low-

According to one aspect of the present invention, the present invention is completed on the basis of the above findings. According to one aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming an A layer made of Sn, In, or an alloy thereof on a substrate; And a B layer formed of Rh, Os, Ir, or an alloy thereof is formed between the substrate and the B layer, and at least one, or two or more species selected from the group consisting of Ni, Cr, Mn, Fe, Wherein the thickness of the A layer is 0.01 to 0.3 mu m, the thickness of the B layer is 0.05 to 0.5 mu m, the thickness of the C layer is 0.05 mu m or more, the thickness of the A layer / And the thickness ratio of the B layer is 0.02 to 4.00.

According to another aspect of the present invention, there is provided a method for manufacturing a semiconductor device, comprising the steps of: forming a layer A composed of Sn, In, or an alloy thereof on a substrate; forming a layer of Ag, Au, Pt, Pd, Ru, , Or a B layer composed of an alloy thereof, and a C layer composed of one or more selected from the group consisting of Ni, Cr, Mn, Fe, Co, and Cu is formed between the substrate and the B layer Wherein the adhesion amount of the A layer is 7 to 230 占 퐂 / cm2, the adhesion amount of the B layer is 50 to 550 占 퐂 / cm2, the adhesion amount of the C layer is not less than 0.03 mg / And the ratio of the adhesion amount of the B layer is 0.10 to 3.00.

In the metallic material for electronic parts of the present invention, when the Depth analysis is performed by XPS (X-ray photoelectron spectroscopy), the concentration of C layer is 20 at%

Concentration of layer A (at%) <Concentration of layer B (at%) + 30

.

In the metallic material for electronic parts of the present invention, it is preferable that the alloy composition of the A layer is at least 50 mass% of Sn, In, or Sn and In, and the remaining alloy components are As, Bi, Cd , Co, Cr, Cu, Fe, Mn, Mo, Ni, Sb, W and Zn.

In the metal material for electronic parts of the present invention, it is preferable that the alloy composition of the B layer is Ag, Au, Pt, Pd, Ru, Rh, Os, Ir, And at least 50 mass% of the total of Rh, Os and Ir, and the remaining alloy component is at least one selected from the group consisting of Bi, Cd, Co, Cu, Fe, Mn, Mo, Ni, Pb, Sb, Se, W, One or more selected metals.

In the metallic material for electronic parts according to one embodiment of the present invention, the alloy composition of the C layer is 50 mass% or more in total of Ni, Cr, Mn, Fe, , Or two or more metals selected from the group consisting of metals.

In another embodiment of the metallic material for electronic parts of the present invention, the Vickers hardness of the surface is Hv 100 or more.

In another embodiment of the metallic material for electronic parts of the present invention, the indentation hardness of the surface of the metal material for electronic parts is 1000 MPa or more when the surface is measured with a load of 0.1 mN by ultrafine microhardness test.

In another embodiment of the metallic material for electronic parts of the present invention, the Vickers hardness of the surface is Hv1000 or less.

In another embodiment of the metallic material for electronic parts of the present invention, the indentation hardness of the surface when measured by ultrafine hardness test is 0.100 mN with a load of 0.1 mN, and the surface hardness is 10000 MPa or less.

In another embodiment of the metallic material for electronic parts of the present invention, the arithmetic mean height (Ra) of the surface is 0.1 占 퐉 or less.

In another embodiment of the metallic material for electronic parts of the present invention, the maximum height (Rz) of the surface is 1 占 퐉 or less.

In the metal material for electronic parts according to another embodiment of the present invention, when the Depth analysis is performed using XPS (X-ray photoelectron spectroscopy), the maximum value of atomic concentration (at%) of Sn or In in the A layer is indicating position (D _1), the B layer of Ag, Au, Pt, Pd, Ru, Rh, Os or positions that represent the highest value of the atomic concentrations (at%) of Ir (D _2), of the C layer Ni, Cr And a position (D ₃ ) indicating the maximum value of the atomic concentration (at%) of Mn, Fe, Co or Cu exist in the order of D ₁ , D ₂ and D ₃ from the outermost surface.

In the metal material for electronic parts according to another embodiment of the present invention, when the depth is analyzed by XPS (X-ray photoelectron spectroscopy), the maximum value of the atomic concentration (at%) of Sn or In in the A layer, And a peak value of atomic concentration (at%) of Ag, Au, Pt, Pd, Ru, Rh, Os or Ir of the B layer is 10 at% or more, And the depth at which the atomic concentration (atomic%) of Co or Cu is 25 at% or more is 50 nm or more.

According to another aspect of the present invention, there is provided a connector terminal using a metallic material for electronic parts of the present invention as a contact portion.

In a further aspect of the present invention, there is provided a connector using the connector terminal of the present invention.

According to another aspect of the present invention, there is provided an FFC terminal using a metal material for electronic parts of the present invention as a contact portion.

According to another aspect of the present invention, there is provided an FPC terminal using a metal material for electronic parts of the present invention as a contact portion.

In another aspect, the present invention is an FFC using the FFC terminal of the present invention.

In another aspect, the present invention is an FPC using the FPC terminal of the present invention.

According to another aspect of the present invention, there is provided an electronic component using the metal material for electronic parts of the present invention as an electrode for external connection.

According to another aspect of the present invention, there is provided a method of manufacturing a metal material for electronic parts according to the present invention, comprising the steps of: forming a female terminal connecting portion on one side of a mounting portion for mounting a metallic material for an electronic component of the present invention; And is press-fitted into the formed through-hole to be mounted on the substrate.

According to the present invention, it is possible to provide a metallic material for electronic parts having a high in-plane sliding abrasion resistance, a high interpolation performance, a low whisker resistance, and a low insertion force.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a configuration of a metallic material for an electronic part according to an embodiment of the present invention. Fig.
Fig. 2 shows the Depth measurement result of XPS (X-ray photoelectron spectroscopy) related to Example 2. Fig.

Hereinafter, a metallic material for an electronic part according to an embodiment of the present invention will be described. 1, a C layer 12 is formed on a surface of a substrate 11, a B layer 13 is formed on the surface of the C layer 12, And the A layer 14 is formed on the surface of the B layer 13. [

&Lt; Configuration of metal material for electronic parts &

(materials)

The base material 11 is not particularly limited, and for example, metal base materials such as copper and copper alloy, Fe base material, stainless steel, titanium and titanium alloy, aluminum and aluminum alloy can be used. It is also possible to combine a metal substrate with a resin layer. Examples of the composite of a metal substrate and a resin layer include an electrode portion on an FPC or FFC substrate.

(A layer)

The A layer 14 needs to be Sn, In, or an alloy thereof. Sn and In are characterized by being relatively soft in metal although they are metals having oxidizing properties. Therefore, even when an oxide film is formed on the surfaces of Sn and In, for example, when a metal material for electronic parts is used as a contact material and an male terminal and a female terminal are fitted, the oxide film is easily shaved, A low contact resistance is obtained.

In addition, Sn and In are excellent in gas corrosion resistance against gases such as chlorine gas, sulfurous acid gas and hydrogen sulfide gas. For example, Ag and C layers 12 having inferior gas corrosion resistance to the B layer 13 The corrosion resistance of the metallic material for electronic parts is improved when Ni and Ni which are inferior in gas corrosion resistance and copper and copper alloys having inferior gas corrosion resistance to the base material 11 are used. In Sn and In, Sn is preferable because In is strictly regulated on the basis of the technical guidance on prevention of health trouble of Ministry of Health, Labor and Welfare of Japan.

Bi, Cd, Co, Cr, Cu, Fe, Mn, Mo, Ni, and Ni in a total amount of 50 mass% or more of Sn, In, Pb, Sb, W, Zn, or two or more metals. When the A layer 14 is formed of, for example, Sn-Ag plating or the like, its composition becomes an alloy, thereby enhancing the high-resistance sliding abrasion, high interpolation voicing, low whisker resistance, and low-noise sputtering.

The thickness of the A layer 14 is required to be 0.01 to 0.3 mu m. When the thickness of the A layer 14 is less than 0.01 탆, sufficient gas corrosion resistance can not be obtained. When the metallic material for electronic parts is subjected to a gas corrosion test such as chlorine gas, sulfurous acid gas, or hydrogen sulfide gas, The contact resistance is greatly increased as compared with before. In addition, sufficient interpolation and voicing can not be obtained, and most of the plating is shaved, thereby increasing the contact resistance. In addition, when the thickness is increased, the adhesion wear of Sn or In is increased, the abrasion resistance of the inner fine sliding member is poor, the force of spalling is large, and whiskers are easily generated. In order to obtain a more satisfactory micro-sliding abrasion resistance, a low-sputtering property and a low whisker resistance, the thickness is set to 0.3 μm or less. Whiskers are generated by the generation of spiral dislocations, and bulks having a thickness of several hundreds nm or more are required to generate spiral dislocations. When the thickness of the A layer 14 is 0.3 占 퐉 or less, it is not a sufficient thickness for generating a spiral dislocation, and basically whisker does not occur. Further, the A layer 14 and the B layer 13 are likely to undergo single-pass diffusion at room temperature, and since the alloy is easily formed, whiskers do not occur.

The adhesion amount of Sn and In in the A layer 14 should be 7 to 230 占 퐂 / cm2. Here, the reason for defining the adhesion amount will be described. For example, when the thickness of the A layer 14 is measured by a fluorescent X-ray film thickness meter, there is a case where an error occurs in the measured thickness value due to the alloy layer formed between the A layer and the B layer below have. On the other hand, when the deposition amount is controlled, accurate quality control can be performed without depending on the formation state of the alloy layer. If the adhesion amount of Sn and In of the A layer 14 is less than 7 占 퐂 / cm2, sufficient gas corrosion resistance can not be obtained. If the metallic material for electronic parts is subjected to gas corrosion test such as chlorine gas, sulfurous acid gas, And the contact resistance is greatly increased as compared with that before the gas corrosion test. In addition, sufficient interpolation and voicing can not be obtained, and most of the plating is shaved, thereby increasing the contact resistance. Also, when the amount of adhesion increases, the adhesion wear of Sn or In becomes large, and the fine sliding abrasion resistance is poor, the force of spalling is large, and whiskers are likely to occur. In order to obtain a more satisfactory micro-sliding abrasion resistance, low-sputtering property and low whisker resistance, it is set to 230 占 퐂 / cm2 or less. The whiskers are generated by the generation of spiral dislocations, which require bulk deposition of several hundreds of g / cm &lt; 2 &gt; or more in order to generate spiral dislocations. When the deposition amount of the A layer 14 is 230 占 퐂 / cm &lt; 2 &gt; or less, it is not a sufficient deposition amount at which a spiral dislocation occurs, and basically whisker does not occur. In addition, the A layer and the B layer are likely to undergo single-pass diffusion at room temperature, and since the alloy is easily formed, no whisker is generated.

(B layer)

The B layer 13 needs to be formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir, or an alloy thereof. Ag, Au, Pt, Pd, Ru, Rh, Os and Ir are relatively heat-resistant in the metals. Accordingly, the composition of the base material 11 and the C layer 12 is prevented from diffusing toward the A layer 14 side to improve the heat resistance. These metals form a compound with Sn or In of the A layer 14 to suppress the formation of an oxide film of Sn or In, thereby improving solder wettability. Among Ag, Au, Pt, Pd, Ru, Rh, Os and Ir, Ag is more preferable from the viewpoint of conductivity. Ag has high conductivity. For example, when Ag is used for a high frequency signal application, the impedance resistance is lowered due to the skin effect.

The alloy composition of the B layer 13 is 50 mass% or more in total of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or Ag, Au, Pt, Pd, Ru, Rh, And the remaining alloy component is one or more metals selected from the group consisting of Bi, Cd, Co, Cu, Fe, In, Mn, Mo, Ni, Pb, Sb, Se, Sn, W, . The B layer 13 is formed of, for example, Sn-Ag plating or the like, and the composition of the B layer 13 becomes an alloy, thereby enhancing the high-resistance sliding abrasion and the high-interpolation voicing.

The thickness of the B layer 13 needs to be 0.05 to 0.5 mu m. If the thickness is less than 0.05 占 퐉, sufficient high in-plane micro-sliding abrasion resistance and internal vibration can not be obtained, and most of the plating is shaved, thereby increasing the contact resistance. Further, when the thickness is increased, the thin film lubrication effect by the hard base material 11 or the C layer is lowered and the spalling force is larger than the target (reduced by 15% or more from the Comparative Example 1). Therefore, There is a need.

The deposition amount of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or their alloys of the B layer 13 should be 50 to 550 占 퐂 / cm2. Here, the reason for defining the adhesion amount will be described. For example, when the thickness of the B layer 13 is measured by a fluorescent X-ray film thickness meter, the value of the thickness measured by the alloy layer formed between the A layer 14 and the B layer 13 below it An error may occur. On the other hand, when the deposition amount is controlled, accurate quality control can be performed without depending on the formation state of the alloy layer. In order to obtain a sufficient high-fine-sliding abrasion or interpolation sounding, an adhesion amount of 50 ㎍ / cm 2 or more is preferable. In addition, when the adhesion amount is large, the thin film lubricating effect due to the hard base material 11 or the C layer is lowered and the spalling force is larger than the target (reduced by 15% or more from the Comparative Example 1). Therefore, .

(C layer)

It is necessary to form a C layer 12 composed of one kind or two or more kinds selected from the group consisting of Ni, Cr, Mn, Fe, Co and Cu between the base material 11 and the B layer 13. [ By forming the C layer 12 using one or two or more metals selected from the group consisting of Ni, Cr, Mn, Fe, Co and Cu, the thin film lubrication effect is improved by the formation of the hard C layer, And the C layer 12 prevents diffusion of the constituent metal of the base material 11 into the B layer so as to improve the durability such as the increase of the contact resistance after the heat resistance test and the gas corrosion resistance test and the deterioration of the solder wettability, do.

The alloy composition of the C layer 12 is 50% by mass or more in total of the sum of Ni, Cr, Mn, Fe, Co, and Cu and one or two or more selected from the group consisting of B, P, . The alloy composition of the C layer 12 has such a constitution that the hardening of the C layer 12 further improves the thin film lubrication effect and improves the low- The durability is improved by further preventing the constituent metal from diffusing into the B layer and suppressing the increase of the contact resistance and the deterioration of the solder wettability after the heat resistance test and the gas corrosion test.

The thickness of the C layer 12 needs to be 0.05 m or more. If the thickness of the C layer 12 is less than 0.05 mu m, the thin film lubrication effect due to the hard C layer is lowered and the low-temperature sputtering is deteriorated, the constituent metal of the base material 11 is easily diffused into the B layer, The durability is deteriorated such that the contact resistance after the gas corrosion test is increased and the solder wettability is easily deteriorated.

The adhesion amount of Ni, Cr, Mn, Fe, Co, and Cu in the C layer 12 should be 0.03 mg / cm2 or more. Here, the reason for defining the adhesion amount will be described. For example, when the thickness of the C layer 12 is measured by a fluorescent X-ray film thickness meter, the thickness measured by the X layer 14, the B layer 13, and the alloy layer formed of the substrate 11, There is a case where an error occurs in the value of &quot; On the other hand, when the deposition amount is controlled, accurate quality control can be performed without depending on the formation state of the alloy layer. If the adhesion amount is less than 0.03 mg / cm &lt; 2 &gt;, the thin film lubrication effect by the hard C layer is deteriorated and the low-temperature sputtering is deteriorated, the constituent metal of the base material 11 is easily diffused into the B layer, Durability is deteriorated, such as an increase in contact resistance and an easy deterioration of solder wettability.

(Relationship between layer A and layer B)

The ratio of the thickness [占 퐉] of the A layer 14 / the thickness [占 퐉] of the B layer 13 needs to be 0.02 to 4.00. If the ratio of the thickness A of the A layer 14 to the thickness B of the B layer 13 is less than 0.02, sufficient gas corrosion resistance can not be obtained and the metallic material for electronic parts can be used as a chlorine gas, a sulfur dioxide gas, Is corroded when the gas corrosion test is performed, and the contact resistance is greatly increased as compared with that before the gas corrosion test. If the ratio of the thickness [占 퐉] of the A layer 14 / the thickness [占 퐉] of the B layer 13 exceeds 4.00, there is a large amount of the A layer 14 in the surface layer and the abrasion resistance in the fine sliding is deteriorated.

The ratio of the adhesion amount [占 퐂 / cm2] of the A layer 14 / the adhesion amount [占 퐂 / cm2] of the B layer 13 needs to be 0.10 to 3.00. If the ratio of the amount of adhesion [占 퐂 / cm2] of the A layer 14 / the amount of adhesion [占 퐂 / cm2 of the B layer 13 is less than 0.10, sufficient gas corrosion resistance can not be obtained, and the metallic material for electronic parts is chlorine gas, , Hydrogen sulfide gas or the like is corroded and the contact resistance is greatly increased as compared with that before the gas corrosion test. If the ratio of the adhesion amount [占 퐂 / cm2] of the layer 14 / the adhesion amount [占 퐂 / cm2] of the B layer 13 exceeds 3.00, the A layer 14 is present in the surface layer to a great extent, It falls out.

(At%) of the layer A (concentration at%) + (concentration of the layer B) + (concentration of the layer B) when the depth of the layer C is 20 at% 30]. If the concentration of the A layer (at%)? [The concentration of the B layer (at%) + 30], there is a large amount of the A layer 14 in the surface layer and the abrasion resistance in the inside may deteriorate.

&Lt; Characteristics of metallic material for electronic parts &

The Vickers hardness of the surface of the A layer 14 (measured from the surface of the A layer) is preferably Hv100 or more. When the Vickers hardness of the surface of the A layer 14 is Hv 100 or more, the thin film A improves the thin film lubricating effect and improves the low-tunability. On the other hand, the Vickers hardness of the surface of the A layer 14 (measured from the surface of the A layer) is preferably Hv1000 or less. When the Vickers hardness of the surface of the A layer 14 is Hv1000 or less, the bending workability is improved. In the case where the metallic material for electronic parts of the present invention is press-molded, cracks are not easily generated in the molded part, (Durability).

The indentation hardness of the surface of the A layer 14 (measured from the surface of the A layer) is preferably 1000 MPa or more. When the indentation hardness of the surface of the A layer 14 is 1000 MPa or more, the lubricating effect of the thin film is improved by the hard A layer, and the low-sputtering performance is improved. On the other hand, the indentation hardness of the surface of the A layer 14 (measured from the surface of the A layer) is preferably 10000 MPa or less. When the indentation hardness of the surface of the A layer 14 is 10000 MPa or less, the bending workability is improved. In the case where the metal material for electronic parts of the present invention is press molded, cracks are not generated in the molded part, Corrosion (durability) deterioration is suppressed.

The arithmetic mean height (Ra) of the surface of the A layer 14 is preferably 0.1 占 퐉 or less. When the arithmetic mean height (Ra) of the surface of the A layer (14) is 0.1 m or less, the convex parts which are relatively easily corroded are reduced and smoothed.

The maximum height (Rz) of the surface of the A layer 14 is preferably 1 占 퐉 or less. When the maximum height (Rz) of the surface of the A layer 14 is 1 占 퐉 or less, the convex parts which are relatively easily corroded are reduced and smoothed, so that gas gas corrosion resistance is improved.

(D ₁ ) indicating the highest value of the atomic concentration (atomic%) of Sn or In of the outermost layer (A layer) 14, a middle layer (layer B A position (D ₂ ) indicating the highest atomic concentration (atomic%) of Ag, Au, Pt, Pd, Ru, Rh, Os or Ir of the lower layer (C layer) It is preferable that the position (D ₃ ) indicating the maximum value of the atom concentration (at%) of Mn, Fe, Co or Cu exists in the order of D ₁ , D ₂ and D ₃ from the outermost surface. If there is no order of D ₁ , D ₂ and D ₃ from the outermost surface, sufficient gas corrosion resistance can not be obtained. If a gas corrosion test such as a chlorine gas, a sulfur dioxide gas or a hydrogen sulfide gas is applied to a metal material for electronic parts There is a possibility that the contact resistance is greatly increased as compared with that before the gas corrosion test.

(Atomic%) of Sn or In in the outermost layer (layer A) 14 and the maximum atomic concentration (atomic%) of atomic concentration (atomic%) in the outermost layer (layer B) Cr, Mn, Fe, and Co of the lower layer (C layer) 12 are 10 at% or more, respectively, when the atomic concentration (atomic%) of Ag, Au, Pt, Pd, Ru, Or the depth at which the atomic concentration (atomic%) of Cu is 25 at% or more is 50 nm or more. Au, Pt, Pd, Ru, Rh, Os or Ir of the middle layer (B layer) 13 and the maximum value of the atomic concentration (at%) of Sn or In of the outermost layer The atomic concentration (at%) of the Ni, Cr, Mn, Fe, Co or Cu of the lower layer (C layer) 12 is 25 at% or more When the thickness is less than 50 nm, the base component may diffuse into the outermost layer (A layer) 14 or the intermediate layer (B layer) 13 to deteriorate due to the low-temperature sputtering and durability (heat resistance, gas corrosion resistance, solder wettability etc.) .

&Lt; Use of metal material for electronic parts &

The use of the metal material for electronic parts of the present invention is not particularly limited, and examples thereof include a connector terminal using a metal material for electronic parts as a contact portion, an FFC terminal or FPC terminal using a metal material for an electronic part as a contact portion, And an electronic component in which a metal material for external connection is used as an electrode for external connection. Regarding the terminal, it is not limited to the method of bonding to the wiring side such as a crimp terminal, a soldering terminal, a press-fit terminal, or the like. The external connection electrodes include connecting parts subjected to surface treatment of taps and materials subjected to surface treatment for under bump metal of semiconductors.

Further, a connector may be manufactured using the connector terminal formed as described above, or an FFC or an FPC may be manufactured using an FFC terminal or an FPC terminal.

In which a metal terminal for electronic parts is mounted on a housing, a female terminal connecting portion is formed on one side of the mounting portion, and a substrate connecting portion is formed on the other side, and the substrate connecting portion is press-fitted into the through- The terminal is also a metal material for electronic parts of the present invention.

Both the male terminal and the female terminal of the connector may be a metal material for electronic parts of the present invention or only a male terminal or a female terminal. Further, both the male terminal and the female terminal are made of the metallic material for electronic parts of the present invention, whereby the low-temperature and low-voltage generation is further improved.

&Lt; Method for producing metallic material for electronic parts &

As a method for producing the metallic material for electronic parts of the present invention, wet (electroless, electroless) plating, dry (sputtering, ion plating, etc.) plating and the like can be used. As a specific method, the C layer 12 is formed on the material 11, the B layer 13 is formed on the C layer 12, and the A layer 14 is formed on the B layer 13 And the A layer 14 and the B layer 13 form an alloy layer by diffusion. With this production method, by further reducing the cohesive force of Sn, high in-plane sliding abrasion and high-frequency interpolation voicing are obtained, and characteristics such as low-sputtering and low whiskers are improved.

(Heat treatment)

After the formation of the A layer 14, heat treatment may be performed for the purpose of improving the high-resistance sliding abrasion, the high-frequency vibration, the low whisker property, and the low-noise performance. It is easy to form the alloy layer between the A layer 14 and the B layer 13 by the heat treatment and the cohesion force of Sn is further reduced to obtain the high in-plane sliding abrasion resistance and the high-frequency interpolation voicing, The characteristics are improved. In this heat treatment, the processing conditions (temperature x time) can be appropriately selected. In addition, this heat treatment is not particularly required.

The heat treatment is preferably carried out at a temperature of 500 DEG C or less and within 12 hours. If the temperature exceeds 500 占 폚, the contact resistance may be increased and the solder wettability may become poor. If the heat treatment time exceeds 12 hours, the contact resistance may be increased and the solder wettability may become poor.

After the heat treatment is performed on the A layer 14 or the A layer 14 for the purpose of improving the in-plane micro-sliding abrasion, the high-interpolation phonation, the low-insertion performance and the high durability (heat resistance, gas corrosion resistance, solder wettability etc.) Post-processing may be performed. The post-treatment improves the lubricity, achieves additional low-sputtering, suppresses oxidation of the A layer and the B layer, and improves durability such as heat resistance, gas corrosion resistance and solder wettability. Specific post-treatments include phosphate treatment, lubrication treatment and silane coupling treatment using an inhibitor. In this heat treatment, the processing conditions (temperature x time) can be appropriately selected. In addition, this heat treatment is not particularly required.

Example

EXAMPLES Hereinafter, examples of the present invention are shown together with comparative examples, but they are provided for better understanding of the present invention and are not intended to limit the present invention.

Samples formed by forming the substrate, the C layer, the B layer, and the A layer in this order and performing the heat treatment were prepared as the examples and the comparative examples under the conditions shown in Tables 1 to 7 below, respectively.

Table 2 shows the fabrication conditions of the C layer, Table 3 shows the fabrication conditions of the B layer, Table 4 shows the fabrication conditions of the A layer, and Table 5 shows the heat treatment conditions. In Table 6 (Table 6-1, Table 6-2, and Table 6-3), conditions for forming each layer and conditions of heat treatment used in the respective Examples are shown in Table 7, Respectively.

[Table 1]

[Table 2]

[Table 3]

[Table 4]

[Table 5]

[Table 6-1]

[Table 6-2]

[Table 6-3]

[Table 7]

(Measurement of thickness)

The thicknesses of the A layer, the B layer, and the C layer were each subjected to a surface treatment on a substrate not having the elements of the A layer, the B layer and the C layer, and the fluorescence X-ray film thickness gauge (SFT9500X manufactured by Seiko Instruments, collimator 0.1 mm Φ). For example, in the case of Sn plating, when the base material is Cu-10 mass% Sn-0.15 mass% P, Sn has a base and the thickness of the Sn plating is not known accurately. And the thickness was measured with Cu-30 mass% Zn.

(Measurement of adhesion amount)

Each sample was acid-decomposed with sulfuric acid or nitric acid, and the amount of each metal deposited was measured by ICP (inductively coupled plasma) emission spectroscopy. The specific acid used differs depending on the composition of each sample.

(Determination of composition)

Based on the measured adhesion amount, the composition of each metal was calculated.

(Determination of layer structure)

The layer structure of the obtained sample was determined as a depth profile by XPS (X-ray photoelectron spectroscopy) analysis. The analyzed elements are composition of C layer, A layer, B layer and C layer. These elements are used as designation elements. The concentration (at%) of each element was analyzed with the total of the designated elements being 100%. The thickness in the XPS (X-ray photoelectron spectroscopy) analysis corresponds to the distance (in terms of SiO ₂ ) on the horizontal axis of the chart by analysis.

The surface of the obtained sample was also subjected to qualitative analysis by Survey measurement by XPS (X-ray photoelectron spectroscopy) analysis. The resolution of the concentration of the qualitative analysis was 0.1 at%.

As the XPS device, an ultimate vacuum degree of 5.7 x 10 &lt; ^-9 &gt; Torr and an excitation source of monochromatic AlK alpha, an output of 210 W, a detection area of 800 mu m phi, an incident angle of 45 deg. : 45 degrees, no neutralization was observed, and the measurement was made under the following sputter conditions.

Ion species: Ar ⁺

Acceleration voltage: 3 kV

Sweep area: 3 mm x 3 mm

Rate: 2.8 nm / min. (In terms of SiO ₂ )

(evaluation)

Each sample was subjected to the following evaluations.

A. My Fine Sliding Abrasion

The sliding resistance and the contact resistance were measured with a sliding distance of 0.5 mm, a sliding speed of 1 mm / s, a contact load of 1 N, and a sliding number of 500 reciprocating conditions using the CRS-G2050 manufactured by Yamazaki Research Institute, Was evaluated. The number of samples was 5, and the range of the minimum value to the maximum value of each sample was adopted. The target characteristic is a contact resistance of 50 m? Or less at a sliding time of 100 times. The contact resistance was classified as <50, 50 to 200 mΩ.

B. interpolation vocalization

Quot; Quot ;, &quot; shoveling force &quot;, and the contact resistance after the insertion test was evaluated. The target characteristic is a contact resistance of 10 m? Or less. The contact resistance was classified into 1 to 5, 2 to 7, 3 to 9, and 10 <mΩ.

C. Shovel power

The shoveling force was measured by using a commercially available Sn reflow plated female terminal (090 type Sumitomo TS / Yasaki 090II series female terminal non-discharge / F090-SMTS) and plated male terminals related to the examples and comparative examples Respectively.

The measurement apparatus used in the test was 1311NR manufactured by IECO Engineering Ltd., and the sliding distance of the male pin was 5 mm. The number of samples was 5, and the insertion force and the releasing force were equal to each other. Therefore, the value obtained by averaging the values of the maximum insertion force of each sample was adopted. A sample of Comparative Example 1 was used as the blank material for the sprung force.

The target of the shoveling force is less than 85% as compared with the maximum shoveling force of Comparative Example 1. This is aimed at a reduction in the insertion force of the comparative example 4, which is greater than that of the comparative example 1, by 90% compared with the maximum insertion force of the comparative example 1.

D. Whiskers

The whiskers were evaluated by the load test (former indenter method) of JEITA RC-5241. That is, each sample was subjected to a load test, and the sample after the load test was observed at a magnification of 100 to 10,000 times with an SEM (manufactured by JEOL, type JSM-5410) to observe occurrence of whiskers. The load test conditions are shown below.

Diameter of spherical indenter: Φ 1 ㎜ ± 0.1 ㎜

Test load: 2 N ± 0.2 N

Examination time: 120 hours

Number of samples: 10

The aimed characteristic is that no whisker having a length of 20 占 퐉 or more does not occur, but the largest target is that no whisker occurs.

E. Contact Resistance

The contact resistance was measured by a four-terminal method under the condition of a contact load of 50 g using the Yamazaki periodical contact contact simulator CRS-113-Au type. The number of samples was 5, and the range of the minimum value to the maximum value of each sample was adopted. The target characteristic is a contact resistance of 10 m? Or less.

F. Heat resistance

The heat resistance was evaluated by measuring the contact resistance of the sample after the atmospheric heating (155 ° C × 500 h) test. The aimed characteristic is that the contact resistance is 10 m? Or less, but the maximum target is that the contact resistance does not change before and after the heat resistance test (equivalent). The heat resistance was classified as contact resistance of 1 to 3, 2 to 4, 3 to 7, and 10 <mΩ.

G. My Gas Corrosion

The gas corrosion resistance was evaluated in the following test environment. The evaluation of gas corrosion resistance is the contact resistance and appearance of the sample after the environmental test. The target property is a contact resistance of 10 m? Or less and the appearance is free of discoloration. However, the maximum target of the contact resistance was set to be unchanged (equivalent) before and after the gas gas corrosion test. The gas corrosion resistance was classified into contact resistance of 1 to 3, 2 to 4, 6 to 9, and 10 <mΩ.

Hydrogen sulfide gas corrosion test

Sulfuric acid concentration: 3 ppm

Temperature: 40 ° C

Humidity: 80% RH

Exposure time: 96 h

Number of samples: 5

H. Solder Wettability

The solder wettability was evaluated after plating. A solder checker (SAT-5000, manufactured by Rescasa) was used, and solder wetting time was measured by a meniscol method using commercially available 25% rosin methanol flux as a flux. Sn-3Ag-0.5Cu (250 DEG C) was used as the solder. The number of samples was 5, and the range of the minimum value to the maximum value of each sample was adopted. The target characteristic is zero cross time 5 seconds (s) or less. Zero cross was classified as 1 to 3, 5 <s.

I. Bending workability

The bending workability was evaluated by bending at 90 degrees under the condition that the ratio of the thickness of the sample to the bending radius became 1 by using a W-shaped mold. In the evaluation, the surface of the bending portion was observed with an optical microscope, and when it was judged that there was no problem in practical use when no crack was observed, the evaluation was &amp; cir &amp; In addition, the number of samples was three.

J. Vickers hardness

The Vickers hardness of the outermost surface layer (A layer) was measured from the sample surface by applying a load of 980.7 mN (Hv0.1) and a load holding time of 15 seconds.

K. Indentation hardness

The indentation hardness of the outermost surface layer (A layer) was measured by ultrafine hardness test (Elionix ENT-2100 manufactured by Elionics) with a load of 0.1 mN applied to the sample surface. Also, the measurement was performed five times per sample.

L. Surface roughness

The measurement of the surface roughness (arithmetic mean height (Ra) and maximum height (Rz)) was carried out using a noncontact type three-dimensional measuring device (manufactured by Mitaka Photonics, model NH-3) in accordance with JIS B 0601. The cutoff was 0.25 mm, and the measurement length was 1.50 mm. Five measurements were made per sample.

The respective conditions and evaluation results are shown in Tables 8 to 16.

[Table 8]

[Table 9]

[Table 10]

[Table 11]

[Table 12]

[Table 13]

[Table 14]

[Table 15]

[Table 16]

Examples 1 to 76 were electronic parts metal materials having both excellent sliding abrasion resistance and interpolation and voicing.

Comparative Example 1 is a blank material.

Comparative Example 2 was made by thinning the Sn plating of the blank material of Comparative Example 1, but the solder wettability was poor.

Comparative Example 3 was manufactured without heat treatment as compared with Comparative Example 2, but the spindle force was higher than the target.

The comparative example 4 was manufactured by applying Cu plating to the middle layer as compared with the comparative example 2, and the spalling force was 90% as compared with the comparative example 1.

Comparative Example 5 was produced by thinning the Sn plating as compared with Comparative Example 4, but the solder wettability was poor.

Comparative Example 6 was manufactured without heat treatment as compared with Comparative Example 5, but the shoveling force was higher than the target.

Comparative Example 7 was produced by subjecting the lower layer to Cu plating as compared with the blank material of Comparative Example 1, but the characteristics of Comparative Example 1 were not changed.

Comparative Example 8 was produced by thickening Ni plating in the lower layer as compared with the blank material of Comparative Example 1, but the characteristics of Comparative Example 1 were not changed.

In Comparative Examples 9 to 13, the thickness and adhesion amount of the B layer were thinner and smaller than the target, but the inner sliding abrasion resistance was poor, and the interpolation and voicing performance was also high.

In Comparative Example 14, the thickness and adhesion amount of the A layer were thinner and smaller than the target, but the gas corrosion resistance was poor, and discoloration was observed on the appearance after the test.

In Comparative Example 15, the thickness and the deposition amount of the A layer were thicker than the target, and the ratio of the A layer in the relation between the A layer and the B layer was large, and in the Depth measurement with XPS (X-ray photoelectron spectroscopy) Because it was present at a higher concentration than the target, the micro-sliding abrasion was bad.

In Comparative Example 16, the thickness and adhesion amount of the A layer were thinner and smaller than the target, but the gas corrosion resistance was poor, and discoloration was observed on the appearance after the test.

In Comparative Example 17, the thickness and the amount of the layer A were thicker than the target, and the thickness of the layer A and the amount of the layer A were thicker than the target and the abrasion resistance was poor.

In Comparative Example 18, the thickness and adhesion amount of the A layer were thinner and smaller than the target, but the gas corrosion resistance was poor, and discoloration was observed on the appearance after the test.

In Comparative Example 19, the thickness and the amount of the A layer were thicker than the target, and the thickness of the A layer was larger than the target but the abrasion resistance was poor because the thickness and the amount of the A layer were too thick. Also, the shovel strength was high.

In Comparative Examples 20 to 22, the thickness and the deposition amount of the B layer were thicker than the target and there were many, but the insertion force was high.

In Comparative Example 23, the thickness and the adhesion amount of the C layer were thinner and smaller than the target, but the insertion force was high, and the heat resistance and the solder wettability were bad.

In Comparative Example 24, the time was longer than the target heat treatment, but the solder did not get wet.

In Comparative Example 25, the temperature was set to be higher than the target heat treatment, but the solder did not get wet.

In the comparative example 26, the thickness and the deposition amount of the A layer are thinner and smaller than the target. In the Depth measurement by XPS (X-ray photoelectron spectroscopy), the maximum value of the atom concentration (at%) of Sn or In in the A layer is 10 at% or less, poor gas corrosion resistance, and the contact resistance after the hydrogen sulfide gas corrosion test exceeded the target.

In Comparative Example 27, the thickness and the deposition amount of the B layer were thinner and smaller than the target. In the Depth measurement by XPS (X-ray photoelectron spectroscopy), the maximum value of the atom concentration (at%) of the B layer was 10 at% , Heat resistance and solder wettability were bad.

In Comparative Example 28, the thickness and the amount of the C layer were thinner and smaller than the target, but the insertion force was high and the heat resistance and the solder wettability were bad.

Comparative Example 29 was prepared by reversing the plating procedure of Sn and Ag as compared with Example 2. In Depth measurement by XPS (X-ray photoelectron spectroscopy), Sn or In atoms of the outermost layer (A layer) A position (D ₁ ) indicating the maximum value of the concentration (atomic%), a position indicating the maximum atomic concentration (atomic%) of Ag, Au, Pt, Pd, Ru, Rh, Os or Ir in the middle layer D ₂ ) exist in the order of D ₂ and D ₁ , the gas resistance is poor, and the contact resistance after the hydrogen sulfide gas corrosion test exceeds the target.

Fig. 2 shows the Depth measurement result of XPS (X-ray photoelectron spectroscopy) related to Example 2. Fig. From Fig. 2, it can be seen that the concentration (at%) of the layer A &lt; (the concentration of the layer B (at%) + 30) satisfies the range in which the C layer becomes 20 at% from the most peak.

In addition, the position that represents the highest value of the A layer of Sn or In of atomic concentration _{(at%) (D 1)} , the B layer Ag, Au, Pt, Pd, Ru, Rh, (at%) Atomic concentration of Os or Ir the position that represents the highest value (D _2), where represents the peak of the C-layer of Ni, Cr, Mn, Fe, Co or an atom concentration (at%) of Cu (D ₃₎ is D _1, D ₂ from the outermost surface, present in the order of D _3, and the highest value of the a layer of Sn or in of atomic concentration (at%), and, the B layer Ag, Au, Pt, Pd, Ru, Rh, (at% atomic concentration of Os or Ir And the depth of the atomic concentration (at%) of Ni, Cr, Mn, Fe, Co or Cu in the C layer is 25 atomic percent or more is 50 nm or more.

10; Metal parts for electronic parts
11; materials
12; C layer
13; Floor B
14; A floor

Claims (22)

A layer of Sn, In, or an alloy thereof is formed on a substrate,
A B layer made of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir, or an alloy thereof is formed between the substrate and the A layer,
A C layer composed of at least one selected from the group consisting of Ni, Cr, Mn, Fe, Co, and Cu is formed between the substrate and the B layer,
The thickness of the A layer is 0.01 to 0.3 mu m,
The thickness of the B layer is 0.05 to 0.5 mu m,
The thickness of the C layer is 0.05 占 퐉 or more,
Wherein the ratio of the thickness of the A layer / the thickness of the B layer is 0.02 to 4.00. A layer of Sn, In, or an alloy thereof is formed on a substrate,
A B layer made of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir, or an alloy thereof is formed between the substrate and the A layer,
A C layer composed of at least one selected from the group consisting of Ni, Cr, Mn, Fe, Co, and Cu is formed between the substrate and the B layer,
The deposition amount of the A layer is 7 to 230 占 퐂 /
The deposition amount of the B layer is 50 to 550 占 퐂 /
The adhesion amount of the C layer is 0.03 mg / cm2 or more,
Wherein the ratio of the amount of the layer A to the amount of the layer B is 0.10 to 3.00. 3. The method according to claim 1 or 2,
When the depth was analyzed by XPS (X-ray photoelectron spectroscopy), in the range where the concentration of the C layer was 20 at% from the peak,
Concentration of layer A (at%) <Concentration of layer B (at%) + 30
Is satisfied. 4. The method according to any one of claims 1 to 3,
Wherein the alloy composition of the layer A is 50 mass% or more of Sn, In, or Sn and In, and the remaining alloy component is As, Bi, Cd, Co, Cr, Cu, Fe, Mn, Mo, Ni, Sb, W, and Zn. The metal material for electronic parts according to claim 1, 5. The method according to any one of claims 1 to 4,
Wherein the alloy composition of the B layer is at least 50 mass% of the total of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or Ag, Au, Pt, Pd, Ru, Rh, Os and Ir, A metallic material for electronic parts composed of one or two or more metals selected from the group consisting of Bi, Cd, Co, Cu, Fe, Mn, Mo, Ni, Pb, Sb, Se, W, . 6. The method according to any one of claims 1 to 5,
An electronic component made of one or more metals selected from the group consisting of B, P and Zn in an amount of 50 mass% or more in total of the alloy composition of the C layer of Ni, Cr, Mn, Fe, Metal material for. 7. The method according to any one of claims 1 to 6,
Wherein the Vickers hardness of the surface is Hv 100 or more. 8. The method according to any one of claims 1 to 7,
Wherein the surface hardness of indentation is 1000 MPa or more when the surface is measured with an ultrafine hardness test and the surface is loaded with a load of 0.1 mN. 9. The method according to any one of claims 1 to 8,
Wherein the Vickers hardness of the surface is Hv1000 or less. 10. The method according to any one of claims 1 to 9,
Wherein the surface hardness of indentation is not more than 10000 MPa when the surface is measured with a super fine microhardness test and the surface is subjected to a load of 0.1 mN. 11. The method according to any one of claims 1 to 10,
And the arithmetic average height (Ra) of the surface is 0.1 占 퐉 or less. 12. The method according to any one of claims 1 to 11,
And a maximum height (Rz) of the surface is 1 占 퐉 or less. 13. The method according to any one of claims 1 to 12,
A position (D ₁ ) indicating the maximum value of the atomic concentration (atomic%) of Sn or In in the layer A, a position (D ₁ ) indicating the maximum value of the atomic concentration of Ag, Au, Pt, (Atomic concentration (at%) of Ni, Cr, Mn, Fe, Co or Cu of the C layer) at a position (D ₂ ) showing the highest atomic concentration (at%) of Pd, Ru, Rh, And the position (D ₃ ) representing the position of the metal layer is present from the outermost surface in the order of D ₁ , D ₂ , and D ₃ . 14. The method according to any one of claims 1 to 13,
Au, Pt, Pd, Ru, and Rh of the B layer when the Depth analysis was performed using XPS (X-ray photoelectron spectroscopy) , The atomic concentration (at%) of Os or Ir is 10 at% or more, and the depth of atomic concentration (at%) of Ni, Cr, Mn, Fe, Co or Cu in the C layer is 25 at% Metallic materials for electronic parts of 50 nm or more. A connector terminal using the metallic material for electronic parts according to any one of claims 1 to 14 as a contact portion. A connector using the connector terminal according to claim 15. An FFC terminal using the metal material for electronic parts according to any one of claims 1 to 14 as a contact portion. An FPC terminal using the metal material for electronic parts according to any one of claims 1 to 14 as a contact portion. An FFC using the FFC terminal according to claim 17. An FPC using the FPC terminal according to claim 18. An electronic part using the metal material for electronic parts according to any one of claims 1 to 14 as an electrode for external connection. A method for manufacturing a metal material for electronic parts according to any one of claims 1 to 14, characterized in that a female terminal connecting portion is formed on one side of a mounting portion for mounting the metallic material for electronic components on the housing and a board connecting portion is provided on the other side, Wherein the through-hole is formed in the through-hole.

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