KR20140135184A - 배면측-조명 센서들을 제조하기 위한 방법 - Google Patents

배면측-조명 센서들을 제조하기 위한 방법 Download PDF

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Publication number
KR20140135184A
KR20140135184A KR1020147025054A KR20147025054A KR20140135184A KR 20140135184 A KR20140135184 A KR 20140135184A KR 1020147025054 A KR1020147025054 A KR 1020147025054A KR 20147025054 A KR20147025054 A KR 20147025054A KR 20140135184 A KR20140135184 A KR 20140135184A
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KR
South Korea
Prior art keywords
backside
semiconductor
thin plate
light sensor
thickness
Prior art date
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KR1020147025054A
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English (en)
Korean (ko)
Inventor
벤카테산 머랄리
아르빈드 차리
고팔 프라부
크리스토퍼 제이. 페티
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지티에이티 코포레이션
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Application filed by 지티에이티 코포레이션 filed Critical 지티에이티 코포레이션
Publication of KR20140135184A publication Critical patent/KR20140135184A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020147025054A 2012-02-08 2013-02-05 배면측-조명 센서들을 제조하기 위한 방법 Withdrawn KR20140135184A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261596694P 2012-02-08 2012-02-08
US61/596,694 2012-02-08
US13/425,877 2012-03-21
US13/425,877 US8871608B2 (en) 2012-02-08 2012-03-21 Method for fabricating backside-illuminated sensors
PCT/US2013/024684 WO2013119513A1 (en) 2012-02-08 2013-02-05 Method for fabricating backside-illuminated sensors

Publications (1)

Publication Number Publication Date
KR20140135184A true KR20140135184A (ko) 2014-11-25

Family

ID=48903240

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147025054A Withdrawn KR20140135184A (ko) 2012-02-08 2013-02-05 배면측-조명 센서들을 제조하기 위한 방법

Country Status (5)

Country Link
US (1) US8871608B2 (https=)
EP (1) EP2812920A4 (https=)
JP (1) JP2015508233A (https=)
KR (1) KR20140135184A (https=)
WO (1) WO2013119513A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3009428B1 (fr) * 2013-08-05 2015-08-07 Commissariat Energie Atomique Procede de fabrication d'une structure semi-conductrice avec collage temporaire via des couches metalliques
JP7364343B2 (ja) * 2019-02-26 2023-10-18 浜松ホトニクス株式会社 光検出装置の製造方法、及び光検出装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
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US4162505A (en) 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US6159824A (en) 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method
JP4450126B2 (ja) 2000-01-21 2010-04-14 日新電機株式会社 シリコン系結晶薄膜の形成方法
JP4220819B2 (ja) * 2003-03-27 2009-02-04 浜松ホトニクス株式会社 放射線検出器
US7339110B1 (en) 2003-04-10 2008-03-04 Sunpower Corporation Solar cell and method of manufacture
US7425460B2 (en) 2004-09-17 2008-09-16 California Institute Of Technology Method for implementation of back-illuminated CMOS or CCD imagers
US7468485B1 (en) 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
AU2006335142B2 (en) 2005-12-21 2011-09-22 Sunpower Corporation Back side contact solar cell structures and fabrication processes
US20070169808A1 (en) 2006-01-26 2007-07-26 Kherani Nazir P Solar cell
US20070277874A1 (en) 2006-05-31 2007-12-06 David Francis Dawson-Elli Thin film photovoltaic structure
US7928317B2 (en) 2006-06-05 2011-04-19 Translucent, Inc. Thin film solar cell
US20080070340A1 (en) 2006-09-14 2008-03-20 Nicholas Francis Borrelli Image sensor using thin-film SOI
US7781715B2 (en) * 2006-09-20 2010-08-24 Fujifilm Corporation Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device
US20080092944A1 (en) 2006-10-16 2008-04-24 Leonid Rubin Semiconductor structure and process for forming ohmic connections to a semiconductor structure
JP5166745B2 (ja) 2007-03-07 2013-03-21 信越化学工業株式会社 単結晶シリコン太陽電池の製造方法
US8481845B2 (en) 2008-02-05 2013-07-09 Gtat Corporation Method to form a photovoltaic cell comprising a thin lamina
JP2009206356A (ja) * 2008-02-28 2009-09-10 Toshiba Corp 固体撮像装置およびその製造方法
EP2281307A4 (en) * 2008-05-28 2011-06-29 Sarnoff Corp REAR-LIGHTED ILLUMINATOR WITH ULTRA-THIN SILICIUM ON INSULATOR SUBSTRATES
US8338209B2 (en) 2008-08-10 2012-12-25 Twin Creeks Technologies, Inc. Photovoltaic cell comprising a thin lamina having a rear junction and method of making
JP4799594B2 (ja) * 2008-08-19 2011-10-26 株式会社東芝 固体撮像装置およびその製造方法
US20100139755A1 (en) 2008-12-09 2010-06-10 Twin Creeks Technologies, Inc. Front connected photovoltaic assembly and associated methods
JP5356872B2 (ja) * 2009-03-18 2013-12-04 パナソニック株式会社 個体撮像装置の製造方法
US7964431B2 (en) 2009-03-19 2011-06-21 Twin Creeks Technologies, Inc. Method to make electrical contact to a bonded face of a photovoltaic cell
JP5482025B2 (ja) * 2009-08-28 2014-04-23 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器

Also Published As

Publication number Publication date
WO2013119513A1 (en) 2013-08-15
US20130203205A1 (en) 2013-08-08
EP2812920A1 (en) 2014-12-17
EP2812920A4 (en) 2015-10-07
JP2015508233A (ja) 2015-03-16
US8871608B2 (en) 2014-10-28

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20140905

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid