KR20140129609A - Semiconductor light emimitting device and manufacturing method of the same - Google Patents

Semiconductor light emimitting device and manufacturing method of the same Download PDF

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Publication number
KR20140129609A
KR20140129609A KR1020130048123A KR20130048123A KR20140129609A KR 20140129609 A KR20140129609 A KR 20140129609A KR 1020130048123 A KR1020130048123 A KR 1020130048123A KR 20130048123 A KR20130048123 A KR 20130048123A KR 20140129609 A KR20140129609 A KR 20140129609A
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South Korea
Prior art keywords
electrode
semiconductor layer
layer
current blocking
semiconductor
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KR1020130048123A
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Korean (ko)
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박은현
전수근
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주식회사 세미콘라이트
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Priority to KR1020130048123A priority Critical patent/KR20140129609A/en
Priority to EP14766651.5A priority patent/EP2851969B1/en
Priority to US14/383,420 priority patent/US9312453B2/en
Priority to CN201480001069.4A priority patent/CN104471727B/en
Priority to PCT/KR2014/003862 priority patent/WO2014178651A1/en
Publication of KR20140129609A publication Critical patent/KR20140129609A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body

Abstract

The present disclosure relates to a semiconductor light emitting device and a manufacturing method thereof. The semiconductor light emitting device includes a plurality of semiconductor layers which includes a first semiconductor layer with a first conductivity, a second semiconductor layer with a second conductivity which is different from the first conductivity, and an active layer which is interposed between the first semiconductor layer and the second semiconductor layer and generates light by the recombination of an electron and a hole, and which is successively grown by using a growth substrate; a current diffusion conductive layer which is located on the second semiconductor layer; a first electrode which is located on the current diffusion conductive layer; and a current blocking layer which is interposed between the second semiconductor layer and the current diffusion conductive layer, is located under the first electrode, and includes an incline which is formed on the edge thereof.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device,

The present disclosure relates generally to a semiconductor light emitting device and a manufacturing method thereof, and more particularly to a semiconductor light emitting device having improved light extraction efficiency and a method of manufacturing the same.

Here, the semiconductor light emitting element means a semiconductor light emitting element that generates light through recombination of electrons and holes, for example, a group III nitride semiconductor light emitting element. The Group III nitride semiconductor is made of a compound of Al (x) Ga (y) In (1-x-y) N (0? X? 1, 0? Y? 1, 0? X + y? A GaAs-based semiconductor light-emitting element used for red light emission, and the like.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

1 is a view showing an example of a conventional semiconductor light emitting device.

The semiconductor light emitting device is grown on a substrate 10 (e.g., a sapphire substrate), a buffer layer 20 grown on the substrate 10, an n-type semiconductor layer 30 grown on the buffer layer 20, and an n-type semiconductor layer 30 The p-type semiconductor layer 50 grown on the active layer 40, the current diffusion conductive film 60 formed on the p-type semiconductor layer 50, and the p-type semiconductor layer 50 formed on the current diffusion conductive film 60, An n-side electrode 80 formed on the n-type semiconductor layer 30 exposed by the mesa etching of the p-type semiconductor layer 50 and the active layer 40, and a protective film 90.

The current diffusion conductive film 60 is provided to supply current to the entire p-type semiconductor layer 50 well. The current diffusion conductive film 60 is formed over substantially the entire surface of the p-type semiconductor layer 50. For example, the current diffusion conductive film 60 may be formed of a transparent conductive film using ITO or Ni and Au, As shown in FIG.

The p-side electrode 70 and the n-side electrode 80 are metal electrodes for supplying electric current, for example, nickel, gold, silver, chromium, titanium, platinum, palladium, rhodium, iridium, aluminum, , Tantalum, copper, cobalt, iron, ruthenium, zirconium, tungsten, molybdenum, or any combination thereof.

The protective film 90 is formed of a material such as SiO 2, and may be omitted.

As a result of the large-sized semiconductor light emitting device and high power consumption, branch electrodes and a plurality of electrodes are introduced for smooth current diffusion in the semiconductor light emitting device. For example, by providing the branch electrode in the p-side electrode 70 and the n-side electrode 80 according to the size of the semiconductor light emitting device (for example, 1000um / 1000um in width / In addition, a plurality of p-side electrodes 70 and n-side electrodes 80 are provided for supplying sufficient current.

the electrodes of the metal such as the p-side electrode 70 and the n-side electrode 80 are thick and deteriorate the light extraction efficiency of the light emitting device because of the large light absorption loss.

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, there is provided a semiconductor device comprising: a first semiconductor layer having a first conductivity; a second semiconductor layer having a second conductivity different from the first conductivity; A plurality of semiconductor layers interposed between the first and second semiconductor layers and having an active layer that generates light through recombination of electrons and holes, the plurality of semiconductor layers being sequentially grown using a growth substrate; A current diffusion conductive film overlying the second semiconductor layer; A first electrode located on the current diffusion conductive film; And a current blocking layer interposed between the second semiconductor layer and the current diffusion conductive film and located below the first electrode, wherein the current blocking layer has a sloped surface formed at an edge thereof. / RTI >

According to another aspect of the present disclosure, there is provided a semiconductor device including: a first semiconductor layer having a first conductivity, which is sequentially grown using a growth substrate; a second semiconductor layer having a second conductivity different from the first conductivity; Preparing a plurality of semiconductor layers interposed between the two semiconductor layers and having an active layer that generates light through recombination of electrons and holes; Forming a current blocking layer on the second semiconductor layer; An etching step of forming a mask so as to cover a certain region of the current blocking layer, removing the current blocking layer in a region not covered with the mask, and forming an inclined surface at an edge of the remaining current blocking layer located under the edge of the mask ; Forming a current diffusion conductive film to cover the second semiconductor layer and the residual current blocking layer; And forming an electrode on the current diffusion conductive film so as to be positioned above the residual current blocking layer.

This will be described later in the Specification for Implementation of the Invention.

1 is a view showing an example of a conventional semiconductor light emitting device,
2 is a view showing an example of a semiconductor light emitting device according to the present disclosure,
3 is a cross-sectional view taken along line AA in Fig. 2,
4 is a graph showing simulation results showing the relationship between the thickness of the current blocking layer and the reflectance,
5 to 7 are views showing a method of forming a current blocking layer having an inclined surface,
8 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
9 is a view showing still another example of the semiconductor light emitting device according to the present disclosure,
10 is a view showing still another example of the semiconductor light emitting device according to the present disclosure;

The present disclosure will now be described in detail with reference to the accompanying drawings.

FIG. 2 is a view showing an example of a semiconductor light emitting device according to the present disclosure, and FIG. 3 is a cross-sectional view taken along line A-A of FIG.

2 and 3, the semiconductor light emitting device 100 includes a substrate 110, a buffer layer 120, a first semiconductor layer 130, an active layer 140, a second semiconductor layer 150, Layer 160, a current diffusion conductive layer 170, a first electrode 180, and a second electrode 190.

A buffer layer 120, a first semiconductor layer 130 having a first conductivity, an active layer 140 generating light through recombination of electrons and holes, and an active layer 140 having a second conductivity different from the first conductivity. 2 semiconductor layers 150 are sequentially formed.

The current diffusion conductive film 170 is positioned on the second semiconductor layer 150 and the first electrode 180 is positioned on the current diffusion conductive film 170. The current blocking layer 160 is located under the first electrode 180 between the second semiconductor layer 150 and the current diffusion conductive film 170. That is, the current blocking layer 160 is provided on the second semiconductor layer 150, and the current diffusion conductive layer 170 covers the current blocking layer 160 and the second semiconductor layer 150.

The semiconductor layers which are epitaxially grown on the substrate 110 are mainly grown by metal organic chemical vapor deposition (MOCVD), and each layer may again include sub-layers as required. A GaN-based substrate is used as the substrate 110, and a sapphire substrate, a SiC substrate, a Si substrate, or the like is used as the different substrate. However, any substrate may be used as long as the substrate can grow a group III nitride semiconductor layer. The substrate 110 may be finally removed, and the buffer layer 120 may be omitted. The second electrode 190 may be formed on the side of the first semiconductor layer 130 on which the substrate 110 is removed or on the side of the substrate 110 having conductivity when the substrate 110 is removed or has conductivity. The first semiconductor layer 130 and the second semiconductor layer 150 are formed to have different conductivity. The first semiconductor layer 130 may be an n-type semiconductor layer 130 (for example, an n-type GaN layer), and the second semiconductor layer 150 may include a p-type semiconductor layer 150 Layer), and vice versa.

After the first semiconductor layer 130, the active layer 140 and the second semiconductor layer 150 are formed, the second semiconductor layer 150 and the active layer 140 are etched in a mesa form, (130) is exposed. A dry etching method, for example, ICP (Inductively Coupled Plasma) may be used as a method of removing a plurality of semiconductor layers. The second electrode 190 is located on the exposed first semiconductor layer 130.

The current blocking layer 160 may be made of an insulator and may be formed of a transparent dielectric material having a lower refractive index than the material to which the current blocking layer 160 contacts, that is, the first semiconductor layer 150 (for example, the P- As shown in Fig. The current blocking layer 160 may include at least one selected from the group consisting of SiO x , TiO x , Ta 2 O 5 , MgF 2 , SiN, SiON, Al 2 O 3 , AlO x, and NiO x . Meanwhile, the current blocking layer 160 may include a distributed Bragg reflector (DBR). As a specific example, the current blocking layer 160 may be formed of a single dielectric film made of a transparent dielectric material such as SiO x and TiO x , or a plurality of different dielectric films having different refractive indexes (e.g., SiO 2 / TiO 2 , SiO 2 / Ta 2 O 5 , SiO 2 / TiO 2 / Ta 2 O 5 or the like) or a distributed Bragg reflector (SiO 2 / TiO 2 or SiO 2 / Ta 2 O 5 combination) : DBR) alone or in combination of a dielectric film and a distributed Bragg reflector as described above. When the current blocking layer 160 is composed of a plurality of dielectric films or includes a distributed Bragg reflector, each layer can be designed to have a reflectance of 90% or more in the LED wavelength band. When the current blocking layer 160 is made of a distributed Bragg reflector alone, the distributed Bragg reflector is formed in a relatively large number of combinations, and when the current blocking layer 160 is made of a combination of a distributed Bragg reflector and a dielectric film such as SiO 2 , Bragg reflectors can be made in a relatively small number of combinations. As described above, when the current blocking layer 160 includes the distributed Bragg reflector, the light blocking layer 160 can effectively perform the light absorption preventing function even if the current blocking layer 160 has a relatively small thickness.

The current diffusion conductive film 170 has light transmittance and improves the uniformity of light. The current diffusion conductive film 170 is mainly formed of ITO or a Ni / Au oxide film. The current diffusion conductive film 170 is preferably formed to be thin because it absorbs a part of light generated in the active layer 140 even when it is made of the most general ITO. If the current diffusion conductive film 170 is too thin, the current diffusion conductive film 170 is excessively thin I do not. Therefore, the current diffusion conductive layer 170 is formed to have a thin thickness within the range of 200 ANGSTROM to 1000 ANGSTROM, in order to minimize the absorption of light generated while the current diffusion function can be smoothly performed without increasing the operating voltage.

Since the current blocking layer 160 is made of an insulator, the current blocking layer 160 has a very high resistance and functions to cut off the current flowing to the active layer 140 under the first electrode 180, There is an advantage that the loss of light due to the light can be reduced. At this time, the current is diffused through the current diffusion conductive film 170. On the other hand, the current blocking layer 160 also functions to prevent light absorption by the first electrode 180. Since the current blocking layer 160 is made of a material having a refractive index lower than that of the material of the second semiconductor layer 150, light generated in the active layer 140 is transmitted through the second semiconductor layer 150 and the current blocking layer 160, So that absorption of light by the first electrode 180 can be reduced. Specifically, the critical angle is determined by the difference in refractive index between the second semiconductor layer 150 and the current blocking layer 160. Light entering the critical angle is reflected only at a certain amount at the interface, and light entering at an angle larger than the critical angle is totally reflected. Accordingly, the amount of light absorbed by the first electrode 180 can be reduced. In order to be affected by the refractive index of the medium in which the light is encountered, the thickness of the medium should be equal to or greater than the thickness of the light. Therefore, the refractive index of the P-type GaN constituting the second semiconductor layer 150 is about 2.4, the refractive index of the SiO 2 forming the current blocking layer 160 is about 1.5, the refractive index of the ITO constituting the current diffusion conductive film 170 The effect of preventing light from being absorbed by the first electrode 180 may be small when the thickness of the current blocking layer 160 is thin. Therefore, it is preferable that the thickness T of the current blocking layer 160 is sufficiently thick, and the larger the reflectance between the first semiconductor layer 150 and the current blocking layer 160, the better the external quantum efficiency.

The current blocking layer 160 is formed in an island shape under the first electrode 180, for example. If the width of the current blocking layer 160 is excessively wide, the region where the current is cut off becomes too large and the efficiency of the device may deteriorate. In addition, the light generated in the active layer 140, The width of the current blocking layer 160 can not be effectively reflected when the width of the current blocking layer 160 is narrower than the width of the current blocking layer 160. Therefore, The width of the first electrode 18 is preferably equal to or slightly wider than the width of the first electrode 18.

4 is a graph showing a simulation result showing the relationship between the thickness of the current blocking layer and the reflectance. 4, the abscissa represents the incident angle of the light incident on the current blocking layer 160, and the ordinate represents the reflectance. The current blocking layer 160 is made of SiO 2 , and the thickness is changed and simulated. Typically, a graph simulating a case where the thickness is 2500 Å and 3000 Å is shown. When the incident angle is very small or large, it can be seen that the reflectance does not vary greatly depending on the thickness T of the current blocking layer 160. However, it can be seen that the reflectance greatly varies with the thickness T of the current blocking layer 160 when the light is incident at an oblique angle of approximately 25 ° to 70 °. When the thickness T of the current blocking layer 160 is increased, The reflectance decreases sharply when the thickness T of the current blocking layer 160 is less than 3000 angstroms and the reflectance is high regardless of the angle of incidence when the thickness T of the current blocking layer 160 is more than 3000 angstroms. Therefore, the thickness T of the current blocking layer 160 may affect the reflection efficiency of light. In order to effectively reflect light, the current blocking layer 160 preferably has a thickness of 3000 ANGSTROM or more.

The current blocking layer 160 also has an inclined surface 165 formed at the edge. It is preferable that the inclined plane 165 of the current blocking layer 160 has a gentle slope? Of 45 degrees or less with respect to the upper surface of the second semiconductor layer 150. [ For example, when the thickness T of the current blocking layer 160 is in the range of 3000 ANGSTROM to 20000 ANGSTROM (0.3 mu m to 2 mu m) inclusive, it is formed into an inclined plane 165 having a gentle slope? .

Since the side surface of the current blocking layer 160 is formed of the inclined surface 165, damage to the current diffusion conductive film 170 can be prevented. Specifically, the current blocking layer 160 has a thermal expansion coefficient different from that of the current blocking layer 160 and the current diffusion layer 170, and the current blocking layer 160 has a high thermal expansion coefficient And the current diffusion conductive film 170 is formed to be significantly thinner than the current diffusion conductive film 170, there is a possibility that the current diffusion conductive film 170 is damaged locally, such as breakage. Particularly, the side surface of the current blocking layer 160 is formed as a vertical surface or a sloped surface close to the vertical direction, so that a portion where the inclination changes abruptly in the current diffusion conductive film 170 (for example, ) Is present, the current diffusion conductive film 170 is more likely to be damaged due to uneven expansion due to the difference in thermal expansion coefficient. However, as described above, since the current blocking layer 160 has the inclined surface 165 having a gentle inclination at the edge, the inclination change of the current diffusion conductive film 170 is relaxed, so that the current diffusion conductive film 170, It is possible to prevent damage to the current diffusion conductive film 170, thereby preventing an increase in the operating voltage due to the damage of the current diffusion conductive film 170.

The current blocking layer 160 may be formed on the second semiconductor layer by, for example, PECVD (Plasma Enhanced Chemical Vapor Deposition), LPCVD (Low Pressure Chemical Vapor Deposition), sputtering, E-beam Evaporation, thermal evaporation, or the like, and then removing unnecessary portions. The process of removing unnecessary portions may be performed, for example, by wet etching. In this process, the current blocking layer 160 has the inclined surface 165 formed at the edge.

5 to 7 are views showing a method of forming a current blocking layer having an inclined surface. 5, the current blocking layer 160 'is first formed to cover the second semiconductor layer 150 in order to form the current blocking layer 160 having the inclined plane 165. Referring to FIG. This current blocking layer 160 'is divided into a region a to be remained and a region b to be removed and a mask 163 is formed to cover the region a to be remained. The mask 163 may be formed of a photoresist. Thereafter, wet etching is performed to remove the current blocking layer (b) in the region to be removed which is not covered with the mask 163, as shown in Fig. Thereafter, as shown in FIG. 7, the mask 163 is removed to leave only the current blocking layer (a) in the region to be remained on the second semiconductor layer 150. In this wet etching process, the inclined surface 165 is formed at the edge of the residual current blocking layer 160 located below the edge of the mask 163. Specifically, in the process in which the current blocking layer (b) of the region to be removed is gradually removed from contact with the etching liquid, the portion of the current blocking layer (a) to be remained below the edge of the mask 163 The sides are gradually exposed to the etchant from the top to the bottom. Therefore, the etchant penetrates deeper horizontally at the upper portion of the current blocking layer (a) to be left in the process of etching, and the etchant penetrates less at the lower portion. That is, the upper portion of the current blocking layer (a) having a large contact with the etchant at the edge of the current blocking layer (a) to be remained is relatively more removed and the lower portion thereof is removed less, An inclined surface 165 is formed at the edge of the base plate. In order to obtain a more gentle slope, for example, a method of weakening the adhesion between the photoresist used as the mask 163 and the SiO 2 layer constituting the uppermost layer of the current blocking layer (a) may be used, So that it can penetrate under the photoresist to obtain a slope 165 having a more gentle inclination. In order to weaken the adhesive force between the photoresist and the SiO 2 layer, the photoresist is treated with SiO 2 (SiO 2 ) in a state in which the process using HMDS (Hexamethyl Di Silane, Si 2 (CH 3 ) 6 ) Layer, or performing a wet etching process while maintaining the temperature of the etchant within a range of 30 占 폚 to 50 占 폚, which is higher than room temperature.

Following the formation of the current blocking layer 160, the current diffusion barrier layer 150 is formed so as to cover almost the entire surface of the second semiconductor layer 150 and the current blocking layer 150 by using a sputtering method, an electron beam evaporation method, 170 are formed. The current diffusion conductive film 170 can be easily formed with good quality since the current blocking layer 160 has the inclined surface 165 having a gentle slope a at the edge. Specifically, when the side surface of the current blocking layer 160 is formed as a vertical surface or a slope close to the vertical direction, it is difficult to form a current diffusion conductive film 170 of good quality on the side surface of the current blocking layer 160, It is more difficult to form the current diffusion conductive film 170 of a low quality. However, as described above, since the current blocking layer 160 is formed to have a sloped surface having a gentle inclination at the edge, the current diffusion conductive film 170 having a good quality can be easily formed.

Next, a first electrode 180 and a second electrode 190 are formed using a method such as a sputtering method, an electron beam evaporation method (Ebeam Evaporation), a thermal evaporation method, or the like. The first electrode 180 and the second electrode 190 may be formed, for example, by laminating chromium, nickel, and gold. The second electrode 190 is formed on the exposed first semiconductor layer 130 by mesa etching and the first electrode 180 is formed on the current diffusion barrier layer 170 on the current blocking layer 160. For example, as shown in FIG. 2, the first electrode 180 and the second electrode 190 may be located on opposite sides of the first electrode 180 and the second electrode 190 ) May be varied in various ways.

8 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 200 is substantially the same as the semiconductor light emitting device 100 described in FIGS. 2 and 3, except that it further includes the first branched electrode 285. Accordingly, the same elements are denoted by corresponding reference numerals and redundant explanations are omitted.

The semiconductor light emitting device 200 further includes a first branched electrode 285 extending from the first electrode 280 on the current diffusion conductive layer 270. The first branched electrode 285 facilitates smooth current diffusion through good electrical contact with the current diffusion conductive film 270. In this case, since the light generated in the active layer 240 is also partially contained in the first branched electrode 285, the current blocking layer 260 is formed between the second semiconductor layer 250 and the current diffusion conductive layer 270 1 electrode 280 as well as under the first branched electrode 285. [ Of course, also in the portion of the current blocking layer 260 located under the first branched electrode 285, the edge is formed by the inclined plane 265.

9 is a view showing still another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 300 is substantially the same as the semiconductor light emitting device 200 described in FIG. 8, except that it further includes a non-conductive reflective film 375. Accordingly, the same elements are denoted by corresponding reference numerals and redundant explanations are omitted.

The semiconductor light emitting device 300 has a non-conductive reflective film 375 so that it has a flip chip shape. The nonconductive reflective film 375 is formed on the second semiconductor layer 350 so as to reflect light from the active layer 340 toward the first semiconductor layer 330 side on the growth substrate 310 side, The branch electrode 385 and the current diffusion conductive film 370, as shown in Fig. A first electrical connection 383 extending upward to penetrate the non-conductive reflective film 375 is provided on the first electrode 380. [ A first pad electrode 387 electrically connected to the first electrode 380 through the first electrical connection 383 is provided on the non-conductive reflective film 375. The non-conductive reflective film 375 may also be formed on a portion of the first semiconductor layer 330 and the second electrode 390 that are etched and exposed. It should be borne in mind by those skilled in the art that the non-conductive reflective film 375 does not necessarily cover all areas on the semiconductor layers 330 and 350 on the opposite side of the substrate 310. [

But the non-conductive reflection film 375 functions as a reflection film, preferably made of a translucent material to avoid absorption of light and, for example, a translucent dielectric material such as SiO x, TiO x, Ta 2 O 5, MgF 2 Lt; / RTI > Since the non-conductive reflective film 375 has a refractive index lower than that of the first semiconductor layer 350 (e.g., P-type GaN) when it is made of SiO x , it can partially reflect light having a critical angle or more toward the semiconductor layers 330, 340 and 350 do. On the other hand, when the non-conductive reflective film 375 is made of a distributed Bragg reflector (DBR) (e.g., a combination of SiO 2 and TiO 2 ), a larger amount of light is reflected toward the semiconductor layers 130, 140 and 150 . 9, the non-conductive reflective film 375 has a dual structure consisting of the distributed Bragg reflector 375a and the dielectric film 375b having a refractive index lower than that of the first semiconductor layer 350. [ Although the dielectric film 375b having a certain thickness is formed prior to the deposition of the distribution Bragg reflector 375a requiring precision, deposition materials 350, 370, 380, 385, and 390 having a heterogeneous and irregular shape are present on the semiconductor layers 330, 340 and 350 , The distribution Bragg reflector 375a can be stably manufactured, and also the reflection of light can be assisted. In the case of the dielectric film 375b, SiO 2 is suitable as the material, and its thickness is suitably from 0.2um to 1.0um. In the case of distributed Bragg reflector 375a, each layer is made of TiO 2 / SiO 2 and is designed to have an optical thickness of 1/4 of a given wavelength, the number of which is 4 to 20 pairs Do.

The first pad electrode 387 is electrically connected to the nonconductive reflective film 375 on the second semiconductor layer 350 in view of helping to reflect light from the active layer 340 toward the substrate 310 side or the first semiconductor layer 330 side. ), Which is a conductive reflective film. At this time, metals such as Al and Ag having high reflectance may be used.

10 is a view showing still another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 400 is substantially the same as the semiconductor light emitting device 300 described in FIG. 9, except that it further includes a second branched electrode 495 and a second electrical connection 493. Accordingly, the same elements are denoted by corresponding reference numerals and redundant explanations are omitted.

The semiconductor light emitting device 400 further includes a second branched electrode 495 extending from the second electrode 490 on the first semiconductor layer 430 exposed by the mesa etching. The second branched electrode 495 helps smooth current diffusion through good electrical contact with the first semiconductor layer 430.

On the other hand, the non-conductive reflective film 475 is formed to cover all the regions on the semiconductor layers 430 and 450 opposite to the substrate 410. That is, the non-conductive reflective film 475 covers the first electrode 480, the first branched electrode 485, and the current diffusion conductive film 470 on the second semiconductor layer 450, The second branched electrode 490 and the second branched electrode 495 are covered. A first electrical connection 483 extending upwardly through the non-conductive reflective film 475 on the first electrode 480 and a second electrical connection 483 extending upwardly from the non-conductive reflective film 475 on the first electrode 490, A second electrical connection 493 extending upwardly to penetrate through the first and second connectors 475 and 475 is provided. The non-conductive reflective film 475 is electrically connected to the first electrode 480 through the first electrical connection 483 and the first pad electrode 487 and the second electrode 490 electrically connected to the non- And a second pad electrode 497 electrically connected to the first pad electrode 493 through the second pad electrode 497.

The first pad electrode 487 and the second pad electrode 497 are insulated from each other from the viewpoint of helping to reflect light from the active layer 440 toward the substrate 410 side or the first semiconductor layer 430 side It is preferable to be a conductive reflective film covering all or almost all of the non-conductive reflective film 475. [ At this time, metals such as Al and Ag having high reflectance may be used.

Various embodiments of the present disclosure will be described below.

(1) The semiconductor light emitting device according to (1), wherein the inclined surface has an inclination of 45 degrees or less with respect to the upper surface of the second semiconductor layer.

(2) The current blocking layer has a thickness within a range of 3000 ANGSTROM to 20000 ANGSTROM.

(3) The current diffusion conductive film has a thickness within a range of 500 ANGSTROM to 1000 ANGSTROM.

(4) The semiconductor light emitting device according to any one of (1) to (4), wherein the current blocking layer comprises at least one of SiO 2 , SiN, SiON, TiO 2 , AlO x and NiO x .

(5) The semiconductor light emitting device according to (5), wherein the current blocking layer includes a distributed Bragg reflector.

(6) a first branched electrode extending from the first electrode on the current diffusion conductive film, wherein the current blocking layer is located between the first semiconductor layer and the current diffusion conductive film and located under the first electrode and the first branched electrode, Wherein the semiconductor light emitting device is a semiconductor light emitting device.

(7) a non-conductive reflective film formed on the second semiconductor layer so as to cover the first electrode, the first branched electrode, and the current diffusion conductive film so as to reflect light from the active layer to the first semiconductor layer side on the growth substrate side; And a first electrical connection extending upward to penetrate the nonconductive reflective film on the first electrode.

(8) The semiconductor light emitting device according to (8), wherein the non-conductive reflective film includes a distributed Bragg reflector.

(9) a second electrode overlying a first semiconductor layer exposed by a mesa etch; A second branched electrode extending from the second electrode over the first semiconductor layer exposed by the mesa etching; A first electrode, a first branch electrode, and a current diffusion film are formed on the second semiconductor layer so that light from the active layer is reflected toward the first semiconductor layer on the growth substrate side. A non-conductive reflective film formed so as to cover the first conductive film; A first electrical connection extending upwardly through the non-conductive reflective film over the first electrode; And a second electrical connection extending upward to penetrate the nonconductive reflective film on the second electrode.

(10) The method of manufacturing a semiconductor light emitting device according to claim 1, wherein the inclined surface has an inclination of 45 degrees or less with respect to the upper surface of the second semiconductor layer.

(11) The method for fabricating a semiconductor light emitting device according to claim 1, wherein the etching step is performed by a wet etching method.

12. The mask method of manufacturing a semiconductor light emitting device which comprises one of a photoresist and SiO 2.

According to one semiconductor light emitting device according to the present disclosure, light extraction efficiency can be improved.

According to another semiconductor light emitting device according to the present disclosure, damage to the current diffusion conductive film can be prevented.

According to the method for manufacturing a semiconductor light emitting device according to the present disclosure, a semiconductor light emitting device having improved light extraction efficiency can be provided.

According to another semiconductor light emitting device manufacturing method according to the present disclosure, it is possible to provide an improved semiconductor light emitting device in which damage to a current diffusion conductive film is prevented.

100, 200, 300, 400: semiconductor light emitting device 110, 310, 410:
120: buffer layer 130, 330, 430: first semiconductor layer
140, 240, 340, 440:
150, 250, 350, 450: second semiconductor layer 160, 160 ', 260: current blocking layer
163: mask 165, 265: inclined surface
170, 270, 370, 470: current diffusion conductive film
180, 280, 380, 480: first electrode 190, 390, 490: second electrode
285, 385, 485: First branch electrode 375, 475: Non-conductive reflective film
375a: distribution Bragg reflector 375b: dielectric film
383: first electrical connection 387, 487: first pad electrode
493: second electrical connection 495: second electrode
497: second pad electrode

Claims (14)

A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer disposed between the first and second semiconductor layers and generating light through recombination of electrons and holes, A plurality of semiconductor layers sequentially grown by using a growth substrate;
A current diffusion conductive film overlying the second semiconductor layer;
A first electrode located on the current diffusion conductive film; And
And a current blocking layer interposed between the second semiconductor layer and the current diffusion conductive film and located under the first electrode, wherein the current blocking layer has a sloped surface formed at an edge thereof. The method according to claim 1,
And the inclined surface has an inclination of 45 DEG or less with respect to the upper surface of the second semiconductor layer. The method according to claim 1,
Wherein the current blocking layer has a thickness of 3000 ANGSTROM or more. The method according to claim 1,
Wherein the current diffusion conductive film has a thickness within a range of 200 ANGSTROM to 1000 ANGSTROM. The method according to claim 1,
A current blocking layer is SiO x, TiO x, Ta 2 O 5, MgF 2, SiN, SiON, Al 2 O 3, AlO x and x NiO Wherein the semiconductor light emitting device comprises at least one of a light emitting diode and a light emitting diode. The method according to claim 1,
Wherein the current blocking layer comprises a distributed Bragg reflector. The method according to claim 1,
And a first branched electrode extending from the first electrode on the current diffusion conductive film,
And the current blocking layer is located under the first electrode and the first branch electrode between the second semiconductor layer and the current diffusion conductive film. The method of claim 7,
A non-conductive reflective film formed on the second semiconductor layer so as to cover the first electrode, the first branched electrode, and the current diffusion conductive film so as to reflect light from the active layer to the first semiconductor layer side on the growth substrate side; And
And a first electrical connection extending upwardly to penetrate the non-conductive reflective film over the first electrode. The method of claim 8,
Wherein the non-conductive reflective film comprises a distributed Bragg reflector. The method of claim 7,
A second electrode overlying a first semiconductor layer exposed by a mesa etch;
A second branched electrode extending from the second electrode over the first semiconductor layer exposed by the mesa etching;
A first electrode, a first branch electrode, and a current diffusion film are formed on the second semiconductor layer so that light from the active layer is reflected toward the first semiconductor layer on the growth substrate side. A non-conductive reflective film formed so as to cover the first conductive film; And
A first electrical connection extending upwardly through the non-conductive reflective film over the first electrode; And
And a second electrical connection extending upward to penetrate the nonconductive reflective film on the second electrode. A second semiconductor layer having a second conductivity different from the first conductivity, and a second semiconductor layer interposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer having a first conductivity, Preparing a plurality of semiconductor layers having an active layer that generates light through recombination of the plurality of semiconductor layers;
Forming a current blocking layer on the second semiconductor layer;
An etching step of forming a mask so as to cover a certain region of the current blocking layer, removing the current blocking layer in a region not covered with the mask, and forming an inclined surface at an edge of the remaining current blocking layer located under the edge of the mask ;
Forming a current diffusion conductive film to cover the second semiconductor layer and the residual current blocking layer; And
And forming an electrode on the current diffusion conductive film so as to be positioned above the residual current blocking layer. The method of claim 11,
And the inclined surface has an inclination of 45 DEG or less with respect to the upper surface of the second semiconductor layer. The method of claim 11,
Wherein the etching step is performed by a wet etching method. The method of claim 11,
Wherein the mask is made of a photoresist.
KR1020130048123A 2013-04-30 2013-04-30 Semiconductor light emimitting device and manufacturing method of the same KR20140129609A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020130048123A KR20140129609A (en) 2013-04-30 2013-04-30 Semiconductor light emimitting device and manufacturing method of the same
EP14766651.5A EP2851969B1 (en) 2013-04-30 2014-04-30 Semiconductor light emitting device
US14/383,420 US9312453B2 (en) 2013-04-30 2014-04-30 Semiconductor light emitting device
CN201480001069.4A CN104471727B (en) 2013-04-30 2014-04-30 Light emitting semiconductor device
PCT/KR2014/003862 WO2014178651A1 (en) 2013-04-30 2014-04-30 Semiconductor light emitting device

Applications Claiming Priority (1)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160057163A (en) * 2014-11-13 2016-05-23 삼성전자주식회사 Light emitting diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160057163A (en) * 2014-11-13 2016-05-23 삼성전자주식회사 Light emitting diode

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