KR20140118445A - Hybrid vacuum vapor deposition method - Google Patents

Hybrid vacuum vapor deposition method Download PDF

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KR20140118445A
KR20140118445A KR1020130034352A KR20130034352A KR20140118445A KR 20140118445 A KR20140118445 A KR 20140118445A KR 1020130034352 A KR1020130034352 A KR 1020130034352A KR 20130034352 A KR20130034352 A KR 20130034352A KR 20140118445 A KR20140118445 A KR 20140118445A
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deposition
coating layer
arc
deposition method
sputter
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KR1020130034352A
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Korean (ko)
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허정
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(주)국민진공
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention relates to a hybrid vacuum deposition method and, more specifically, to a hybrid vacuum deposition method for forming a double coating layer by using the different deposition methods mixed with each other inside one chamber. According to the present invention, an arc depositing device and a sputter depositing device are included in one vacuum chamber. Moreover, the hybrid vacuum deposition method is characterized by forming a second coating layer by consecutive secondary sputter deposition after a first coating layer is formed by primary arc deposition when a target is deposited on a deposition material to be deposited inside the chamber. An arc deposition method is applied to the first coating layer of the deposition material, so adhesion, corrosion resistance, and hardness are improved. Moreover, a sputter deposition method is applied to the second coating layer, so the second coating layer is finished after conductivity, friction coefficient, surface roughness, and gloss are improved. Therefore, the present invention has the advantage of manufacturing the high efficiency of a hybrid coating layer by maintaining advantages of the arc deposition method and the sputter deposition method, and removing disadvantages thereof.

Description

하이브리드 진공증착방법{HYBRID VACUUM VAPOR DEPOSITION METHOD}[0001] HYBRID VACUUM VAPOR DEPOSITION METHOD [0002]

본 발명은 진공증착방법에 관한 것으로, 더 상세하게 설명하면 서로 하나의 챔버 내 다른 증착방식을 혼용하여 이중코팅층이 형성되도록 한 하이브리드 진공증착방법에 관한 것이다.
The present invention relates to a vacuum deposition method, and more particularly, to a hybrid vacuum deposition method in which a dual coating layer is formed by mixing different deposition methods in one chamber.

일반적으로 진공증착은, 진공 챔버 내에서 타켓물질을 증발시킨 다음, 그 증발물질을 증착물의 표면에 박막코팅이 입혀지도록 하는 것을 말한다.Vacuum deposition generally refers to evaporating the target material in a vacuum chamber and then allowing the thin film coating to coat the surface of the deposition material.

이러한, 진공증착방법의 종류로는 크게 물리증착(physical vapor deposititon : PVD)과 화학증착(chemical vapor deposition: CVD)으로 나뉘고, 다시 물리증착은 증발(evaporation), 스퍼터링(sputtering), 이온플레이팅(ionplating), 아크증착(arc deposition), 이언빔보조증착(ion beamassisted deposition), 등으로 나뉠 수 있다.These types of vacuum deposition methods are divided into physical vapor deposition (PVD) and chemical vapor deposition (CVD). Physical vapor deposition is performed by evaporation, sputtering, ion plating ion plating, arc deposition, ion beam assisted deposition, and the like.

여기에서, 종래에는 증착 물질계 및 응고 방법에 따라 상기의 진공증착방법 중, 어느 하나를 선택하여 단일방식으로 증착하는 것이 대부분이었다.Conventionally, most of the above-mentioned vacuum deposition methods are selected in accordance with the deposition material system and the solidification method and are deposited in a single manner.

그러나, 이렇게 단일방식으로 증착된 증착물은 증착방식에 따라 각각의 장단점을 가지게 된다.However, the deposits thus deposited in a single manner have respective advantages and disadvantages depending on the deposition method.

예를 들어, 아크증착은 타겟의 표면에 아크방전으로 타겟재료를 용융증발시켜 기화된 타겟물질을 증착물에 증착되도록 하는 것으로, 높은 이온화율에 의한 빠른 증착 속도를 보장하고 높은 이온화에너지에 의해 밀착성과 경도가 향상되나, 용융풀(droplet)의 발생과 높은 이온화에너지로 표면조도가 거칠고, 마찰계수가 높고, 광택이 매끄럽지 못하며, 고융점물질은 사용이 곤란하여 타겟에 대한 제한이 따르는 문제점이 있고, For example, arc evaporation deposits a vaporized target material onto a deposition material by melting the target material by arc discharge on the surface of the target by arc discharge, thereby ensuring a fast deposition rate by a high ionization rate, The hardness is improved but the generation of droplets and high ionization energy cause roughness of the surface roughness, high coefficient of friction, poor smoothness, difficulty in using the high melting point material,

스퍼터증착은 이온화된 아르곤가스를 타겟에 가속 충돌시켜 분출된 타겟물질을 증착물에 증착되도록 하는 것으로, 비용융방식으로 타겟에 대한 제한이 없고 표면조도가 우수하고 낮은 마찰계수와 광택이 매끄러우나, 증착속도가 느리고 밀착력과 경도가 떨어지는 문제점이 있다.
The sputter deposition causes the ionized argon gas to accelerate collide with the target so that the ejected target material is deposited on the deposition material. Thus, there is no restriction on the target in a cost-effective manner, an excellent surface roughness, a low friction coefficient and smoothness, There is a problem that the speed is slow and the adhesion and hardness are decreased.

출원번호 1019940034833, 1020047004398, 1020107000899, 2020060028922.Application Nos. 1019940034833, 1020047004398, 1020107000899, 2020060028922.

본 발명은 종래의 진공증착방식에서 나타나는 장점은 살리되, 단점은 제거되도록 함으로써, 단일방식에서 얻기 어려운 고효율의 코팅층이 형성되도록 함에 그 목적이 있다.
It is an object of the present invention to provide a coating layer having a high efficiency, which is difficult to obtain in a single system, by eliminating the disadvantages of the conventional vacuum deposition system.

상기 목적을 달성하기 위해 본 발명은, 하나의 진공 챔버 내 아크증착장치부와, 스퍼터증착장치부를 구성하고, 상기 챔버 내 증착하고자 하는 증착물에 타겟 증착시, 1차 아크증착으로 제1코팅층을 형성한 다음, 연속해서 2차 스퍼터증착으로 제2코팅층을 형성하여서 완성함을 특징으로 한다.In order to accomplish the above object, the present invention provides an arc evaporation apparatus and a sputter deposition apparatus in one vacuum chamber, wherein a first coating layer is formed by first arc vapor deposition during deposition of the deposition material to be deposited in the chamber And then a second coating layer is formed by secondary sputter deposition successively.

상기와 같이 된 본 발명은, 증착물의 제1코팅층은 아크증착방식을 적용하여 밀착성, 내식성, 경도를 향상시키고, 제2코팅층은 스퍼트증착방식을 적용하여 전도성, 마찰계수, 표면조도, 광택을 향상시켜 마감함으로써, 아크증착방식과 스퍼터증착방식이 가지고 있는 장점은 그대로 살리되, 단점은 제거시킬 수 있기 때문에 고효율의 하이브리드 코팅층을 생산할 수 있는 이점이 있다.
In the present invention as described above, the first coating layer of the deposition material is improved in adhesion, corrosion resistance and hardness by applying an arc vapor deposition method, and the second coating layer is improved in conductivity, friction coefficient, surface roughness and gloss by applying a sputter deposition method The advantages of the arc evaporation method and the sputter deposition method are retained, but the disadvantage can be eliminated, which is advantageous in that a high-efficiency hybrid coating layer can be produced.

본 발명을 달성하기 위해 진공증착장치는 아래 그림과 같이, In order to achieve the present invention, as shown in the following figure,

Figure pat00001
Figure pat00001

하나의 진공 챔버 내 아크증착장치부(Are Source)와 스퍼터증착장치부(UBMS Source)를 동시에 구성하고, 플라즈마화학증착장치부(PECVD)는 선택적으로 부가한다.An arc source device and a sputter deposition device are simultaneously formed in one vacuum chamber, and a plasma chemical vapor deposition (PECVD) device is selectively added.

이렇게 하면, 증착물의 종류에 따라 아크증착과 스퍼터증착과 플라즈마화학증착을 단일 또는 혼용하여 구사할 수 있다. In this way, arc deposition, sputter deposition and plasma chemical vapor deposition can be used singly or in combination, depending on the kind of deposition material.

상기에서 하나의 챔버 내 세 가지 증착장치부를 구성하는 데는 증착원리가 유사하기 때문에 어렵지 않다. 다만, 각자의 증착방식에 따른 순서와 환경조건 적합하게 적용하여 운용하면 된다.
It is not difficult to construct the three deposition units in one chamber because the deposition principle is similar. However, the order and environmental conditions according to the respective deposition methods may be suitably applied.

본 발명은 상기의 진공증착장치에서 챔버 내 증착하고자 하는 증착물에 타겟 증착시, 1차 아크증착으로 제1코팅층을 형성한 다음, 연속해서 2차 스퍼터증착으로 제2코팅층을 형성하여서 완성함을 특징으로 한다.The present invention is characterized in that a first coating layer is formed on the deposition material to be deposited in the chamber by the primary arc deposition at the time of target deposition and then a second coating layer is formed by secondary sputter deposition successively .

이렇게 하면, 제1코팅층은 아크증착방식을 적용하여 밀착성, 내식성, 경도를 향상시키고, 제2코팅층은 스퍼트증착방식을 적용하여 전도성, 마찰계수, 표면조도, 광택을 향상시켜 마감함으로써, 아크증착방식과 스퍼터증착방식이 가지고 있는 장점은 그대로 살리되, 단점은 제거시킬 수 있기 때문에 고효율의 하이브리드 코팅층을 생산할 수 있는 이점이 있다.
In this case, the first coating layer is improved in adhesion, corrosion resistance and hardness by applying an arc vapor deposition method, and the second coating layer is improved in conductivity, friction coefficient, surface roughness and gloss by applying a sputter deposition method, And a sputter deposition method, but it has a merit that a high efficiency hybrid coating layer can be produced because the disadvantage can be removed.

이하, 진공증착시 코팅하고자 하는 타겟에 따른 주적용 분야와, 그 기능들을 나타낸 아래의 표와 함께 본 발명의 바람직한 실시 예를 설명하면 다음과 같다.Hereinafter, preferred embodiments of the present invention will be described with reference to the main application fields and functions of the targets to be coated in vacuum deposition.

Figure pat00002

Figure pat00002

예를 들면, DLC 타겟의 경우, 높은 경도(Hv5000이상)를 필요로 하는 공구 등에는 아크증착을 하는 게 일반적이고, 마찰계수(0.1 이하)가 중요한 자동차, 기계부품 등에는 스퍼터증착을 하는 게 일박적이다. For example, in the case of a DLC target, arc deposition is generally performed in a tool requiring a high hardness (Hv5000 or more), and in an automobile or a machine part in which a friction coefficient (less than 0.1) is important, It is enemy.

그러나, 높은 경도(Hv3000이상)와 마찰계수(0.2이하)를 동시에 만족하여야 하는 금형의 경우는, 본 발명에 의해 1차 아크증착하고 후, 연속해서 2차 스퍼터증착을 수행하면 경도와 마찰계수 두 가지를 동시에 만족시킬 수 있게 된다.
However, in the case of a mold in which a high hardness (Hv3000 or higher) and a friction coefficient (0.2 or lower) must be satisfied at the same time, when the primary arc deposition is performed according to the present invention and then the secondary sputter deposition is continuously performed, Branches can be satisfied at the same time.

또 다른 예로, 내식성과 전도성이 중요한 금속분리판의 경우, CrN으로 1차 아크증착하고, 2차 스퍼트증착하게 되면, 1차 아크증착시 내식성은 향상되나 표면에 용융풀(Droplet) 현상으로 전도성이 떨어지게 되는데, 이것을 2차 스퍼트증착으로 보완할 수 있기 때문에, 내식성과 전도성을 동시에 만족시킬 수 있게 된다.
As another example, in the case of a metal separator, which is important in corrosion resistance and conductivity, the primary arc deposition with CrN and the secondary sputter deposition improve the corrosion resistance in the primary arc deposition, but the conduction due to the droplet phenomenon on the surface Since this can be compensated by the secondary sputter deposition, the corrosion resistance and the conductivity can be satisfied at the same time.

한편, 본 발명에서 1차 아크증착 한 후, 2차 스퍼터증착을 할 때, 플라즈마화학장치부에 의한 플라즈마화학증착을 혼용함이 더욱 바람직하다. In the present invention, it is more preferable to mix the plasma chemical vapor deposition by the plasma chemical apparatus when performing the primary arc deposition and the secondary sputter deposition.

그 이유는 스퍼트증착의 특성상 증착속도가 상당히 느린데, 이때 타겟을 사용하지 않고 가스를 분출하여 증착하는 플라즈마화학증착을 혼용하게 되면, 증착속도의 현저한 개선과 동시에 표면코팅의 균일성을 더욱 향상시킬 수는 효과가 있다.
This is because the deposition rate is considerably slow due to the nature of the sputter deposition. If the plasma chemical vapor deposition in which the gas is sprayed without using the target is mixed, the uniformity of the surface coating can be further improved while remarkably improving the deposition rate Is effective.

또 다르게는, 본 발명에서 진공 챔버에 가스이온세정활성화장치를 더 부가하고, 1차 아크증착 전, 가스이온세정활성화장치를 통하여 증착물 표면에 가스 이온세정으로 표면세정을 활성화함과, 금속이온세정시간을 단축하여 증착 전 표면조도를 향상시킨 다음, 아크증착과 스퍼터증착을 순차적으로 수행함이 더욱 바람직하다.Alternatively, the present invention may further include a gas ion cleaning activating device in the vacuum chamber, activating the surface cleaning by gas ion cleaning on the surface of the deposition material through the gas ion cleaning activating device before the primary arc deposition, It is more preferable that the time is shortened to improve the surface roughness before deposition and then the arc deposition and the sputter deposition are sequentially performed.

그 이유는 표면조도 향상을 위해 아크증착 후, 스퍼터증착을 시도하더라도, 아크증착 전 표면의 거칠기가 심하면, 결과적으로 고도로 향상된 표면조도를 얻을 수 없다. 이에 아크증착 전 가스 이온세정으로 증착물의 표면을 고르게 하는 전처리단계를 거친 후, 아크증착과 스퍼터증착을 수행하게 되면, 결과적으로 스퍼터증착에 의한 표면조도가 월등히 향상되는 효과가 있다.The reason for this is that even if the sputter deposition is attempted after the arc deposition to improve the surface roughness, if the surface roughness before the arc deposition is large, a highly improved surface roughness can not be obtained as a result. If the arc deposition and the sputter deposition are performed after the pretreatment step of adjusting the surface of the deposition material by the gas ion cleaning before the arc deposition, the surface roughness due to the sputter deposition is significantly improved.

상기에서 금속이온세정을 단축하는 이유는 금속이온세정과정에서 용융풀(Droplet) 현상으로 표면조도가 떨어지기 때문이다.The reason for shortening the cleaning time of the metal ion is that the surface roughness drops due to the droplet phenomenon in the metal ion cleaning process.

상기에서 가스 이온세정활성화장치 및 방식은 본 발명의 특허권자/발명자가 선출원한 출원번호 20-2006-0028922호에 제시한 바 있다.
The apparatus and method for activating the gas ion cleaning in the above is disclosed in Application No. 20-2006-0028922, filed by the inventor / inventor of the present invention.

상기와 같이 본 발명을 설명하였으나, 본 발명을 설명함에 있어 선등록된 공지기술 및 통상적 기술에 대한 구체적 설명은 본 발명의 요지를 흐릴 수 있어 생략 또는 간단한 명칭 등으로 대체하였다. 그러나 본 발명과 관련된 해당기술분야의 숙련된 당업자라면 본 발명에 기재된 설명만으로 충분히 이해할 수 있을 것이라 사료되고, 이를 기반으로 다양하게 수정 및 변경, 응용시킬 수 있을 것이며, 본 발명을 계기로 진공증착분야에 한 층 더 나은 기술개발이 이루어질 수 있을 것이다.While the present invention has been described in connection with the exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. However, those skilled in the art will appreciate that the present invention can be fully understood by those skilled in the art, and various modifications, changes, and adaptations can be made based thereon. It will be possible to achieve better technology development.

Claims (3)

하나의 진공 챔버 내 아크증착장치부와, 스퍼터증착장치부를 구성하고, 상기 챔버 내 증착하고자 하는 증착물에 타겟 증착시, 1차 아크증착으로 제1코팅층을 형성한 다음, 연속해서 2차 스퍼터증착으로 제2코팅층을 형성하여서 완성함을 특징으로 하는 하이브리드 진공증착방법.
An arc evaporation unit in one vacuum chamber and a sputter deposition unit are constituted. A first coating layer is formed by primary arc deposition at the time of target deposition in the deposition material to be deposited in the chamber, and then, by secondary sputter deposition Wherein the second coating layer is formed and completed.
제 1항에 있어서,
상기 진공 챔버 내 플라즈마화학증착장치부를 더 부가하고, 2차 스퍼터증착시 플라즈마화학증착을 혼용하여 제2코팅층을 형성함을 포함하는 하이브리드 진공증착방법.
The method according to claim 1,
Further comprising adding a plasma chemical vapor deposition device in the vacuum chamber, and forming a second coating layer by using a plasma chemical vapor deposition during the secondary sputter deposition.
제 1항에 있어서,
상기 진공 챔버에 가스이온세정활성화장치를 더 부가하고, 1차 아크증착 전, 가스이온세정활성화장치를 통하여 증착물 표면에 가스 이온세정을 한 다음, 아크증착과 스퍼터증착을 수행함을 포함하는 하이브리드 진공증착방법.The method according to claim 1,
A gas ion cleaning activating device is further provided in the vacuum chamber, and a gas ion cleaning is performed on the surface of the deposition material through a gas ion cleaning activating device before the first arc vapor deposition, and then an arc vapor deposition and a sputter deposition are performed, Way.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101701440B1 (en) * 2016-06-07 2017-02-01 (주)디쉬뱅크 A method for production of Plasma Hybrid Deposition System

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101701440B1 (en) * 2016-06-07 2017-02-01 (주)디쉬뱅크 A method for production of Plasma Hybrid Deposition System

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