KR20140104755A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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KR20140104755A
KR20140104755A KR1020130018647A KR20130018647A KR20140104755A KR 20140104755 A KR20140104755 A KR 20140104755A KR 1020130018647 A KR1020130018647 A KR 1020130018647A KR 20130018647 A KR20130018647 A KR 20130018647A KR 20140104755 A KR20140104755 A KR 20140104755A
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layer
barrier layer
quantum
layers
light emitting
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KR102015908B1 (en
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이종현
심은덕
김영선
윤석호
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삼성전자주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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Abstract

According to an aspect of the present invention, a semiconductor light emitting device includes a first conductive semiconductor layer; an active layer which is formed on the first conductive semiconductor layer and includes a quantum barrier layer and a quantum well layer; and a second conductive semiconductor layer formed on the active layer. The quantum barrier layer includes a first guide layer and a second guide layer on which impurities in an n type are doped, and an inner barrier layer, which is arranged between the first guide layer and the second guide layer and includes impurities in a p type doped thereon. According to an embodiment of the present invention, the semiconductor light emitting device having an increased efficiency of inner quantum and a reduced droop effect can be obtained.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device,

The present invention relates to a semiconductor light emitting device.

BACKGROUND ART A light emitting diode (LED), which is a kind of semiconductor light emitting device, is a semiconductor device capable of generating light of various colors by recombination of electrons and holes, and has a long lifetime, low power, And high vibration resistance. Therefore, demand is continuously increasing. Particularly, in recent years, group III nitride semiconductors capable of generating light in the short wavelength range of the blue series have been spotlighted. On the other hand, as the use range of the semiconductor light emitting element becomes wider, a high output light emitting element is required. However, when a high current is applied for a high output, a so-called droop phenomenon in which the luminous efficiency of the semiconductor light emitting device is gradually reduced is a problem. Further, there is a need to improve the low internal quantum efficiency due to non-luminescent coupling between electrons and holes.

Accordingly, there is a need in the art to improve the droop phenomenon of the semiconductor light emitting device and to improve the recombination efficiency of electrons and holes in the active layer.

It should be understood, however, that the scope of the present invention is not limited thereto and that the objects and effects which can be understood from the solution means and the embodiments of the problems described below are also included therein.

According to an aspect of the present invention, there is provided a light emitting device comprising: a first conductive semiconductor layer; an active layer formed on the first conductive semiconductor layer and including a quantum barrier layer and a quantum well layer; and a second conductive semiconductor layer formed on the active layer, Wherein the quantum barrier layer comprises first and second guide layers doped with n-type impurities, and an inner barrier layer disposed between the first and second guide layers and doped with p-type impurities And a semiconductor light emitting device.

Wherein the quantum barrier layer and the quantum well layer are each a plurality of, and the plurality of quantum barrier layers and the plurality of quantum well layers may be alternately arranged.

Here, each of the plurality of quantum barrier layers

Figure pat00001
The value may be 1 or more and 300 or less. (Where N p is the p-type impurity concentration of the inner barrier layer and N n1 and N n2 are the n-type impurity concentration of the first and second guide layers)

In this case, the plurality of quantum barrier layers

Figure pat00002
Value can be made smaller toward the second conductivity type semiconductor layer.

In addition, the p-type impurity concentration of the inner barrier layer included in the plurality of quantum barrier layers may increase as the second conductivity type semiconductor layer is closer to the second conductivity type semiconductor layer.

In addition, the thickness of the inner barrier layer included in the plurality of quantum barrier layers may be larger as the second barrier layer is closer to the second conductivity type semiconductor layer.

On the other hand, the n-type impurity concentrations of the first and second guide layers may be 5 × 10 17 / cm 3 or more and 2 × 10 19 / cm 3 or less, respectively.

P-type impurity concentration of the inner barrier layer is 5 × 10 18 / cm 3 at least 5 × 10 19 / cm 3 or less can.

The thickness of the inner barrier layer may be 1.5 ANGSTROM or more and 13 ANGSTROM or less.

The semiconductor light emitting device may further include an undoped barrier layer disposed between the first guide layer, the inner barrier layer, and the second guide layer, the undoped barrier layer not doped with n-type and p-type impurities.

In addition, the solution of the above-mentioned problems does not list all the features of the present invention. The various features of the present invention and the advantages and effects thereof will be more fully understood by reference to the following specific embodiments.

According to one embodiment of the present invention, it is possible to obtain a semiconductor light emitting device in which the internal quantum efficiency is improved and the droop phenomenon is alleviated.

However, the advantageous effects and advantages of the present invention are not limited to those described above, and other technical effects not mentioned can be easily understood by those skilled in the art from the following description.

1 is a cross-sectional view schematically showing a semiconductor light emitting device according to an embodiment of the present invention.
2 is an energy band diagram for explaining one feature of a semiconductor light emitting device according to an embodiment of the present invention.
3 and 4 are cross-sectional views schematically showing a semiconductor light emitting device according to another embodiment of the present invention.
5 is a graph showing a comparison experiment for explaining the effect of the semiconductor light emitting device according to the embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shapes and sizes of the elements in the drawings and the like can be exaggerated for clarity.

1 is a cross-sectional view of a semiconductor light emitting device according to an embodiment of the present invention.

1, the semiconductor light emitting device according to the present embodiment includes a substrate 110, a first conductive semiconductor layer 130 formed on the substrate 110, a first conductive semiconductor layer 130, An active layer 140 formed on the active layer 140 and including a quantum well layer 10 and a quantum barrier layer 20; a second conductive semiconductor layer 150 formed on the active layer 140; And first and second electrodes 130a and 150a electrically connected to the two-conductivity-type semiconductor layers 130 and 150, respectively.

In the present embodiment, the quantum barrier layer 20 is disposed between the first and second guide layers 21a and 21b doped with n-type impurities and the first and second guide layers 21a and 21b and an inner barrier layer 22 doped with a p-type impurity.

The substrate 110 is provided as a substrate for semiconductor growth and may be made of an insulating, conductive, or semiconducting material such as sapphire, Si, SiC, MgAl 2 O 4 , MgO, LiAlO 2 , LiGaO 2 , GaN, In this case, it is most preferable to use sapphire having electrical insulation, sapphire having hexagonal-rhombo-symmetry (Hexa-Rhombo R3c) symmetry and having lattice constants of 13.001 Å and 4.758 Å in the c- And has a C (0001) plane, an A (1120) plane, an R (1102) plane, and the like. In this case, the C-plane is relatively easy to grow the nitride film, and is stable at high temperature, and thus is mainly used as a substrate for nitride growth. Other materials suitable for use as the substrate include, for example, a Si substrate, and mass productivity can be improved by using a Si substrate that is more suitable for large-scale curing and relatively low in cost. When a Si substrate is used, a nucleation layer made of a material such as Al x Ga 1 - x N may be formed on a substrate, and then a nitride semiconductor having a desired structure may be grown thereon.

Meanwhile, the substrate 110 may be removed after the light emitting structure including the first and second conductive semiconductor layers 130 and 150 and the active layer 140 disposed therebetween is grown. For example, the sapphire substrate may be removed using an LLO process or the like that irradiates a laser between the interface with the light emitting structure, and the Si to SiC substrate may be removed by a method such as polishing or etching.

In this embodiment, a buffer layer 120 may be disposed between the substrate 110 and the first conductivity type semiconductor layer 130. Generally, when a light emitting structure is grown on the substrate 110, for example, when a GaN thin film is grown as a light emitting structure on a different substrate, dislocation due to lattice constant mismatch between the substrate 110 and the GaN thin film The same lattice defect may occur, and cracks may occur in the light emitting structure due to warping of the substrate 110 due to a difference in thermal expansion coefficient. For this defect control and warping control, a buffer layer 120 may be formed on the substrate 110, and then a first conductive semiconductor layer 130 of a desired structure, for example, a nitride semiconductor, may be grown thereon . The buffer layer 120 may be a low-temperature buffer layer formed at a temperature lower than a single crystal growth temperature of the light emitting structure, but is not limited thereto.

As the material of the buffer layer 120, Al x In y Ga 1 -x- y N (0? X? 1, 0? Y? 1), in particular GaN, AlN and AlGaN may be used. The buffer layer 120 may have an undoped GaN layer doped with no impurity to a predetermined thickness.

Of course, the present invention is not limited to this, and any structure may be employed as long as it improves the crystallinity of the light emitting structure, and materials such as ZrB 2 , HfB 2 , ZrN, HfN, TiN and ZnO may also be used. It is also possible to combine a plurality of layers or to use a layer whose composition is gradually changed.

1 and the second conductivity type semiconductor layers 130 and 150 may be made of a semiconductor doped with an n-type or a p-type impurity, respectively. However, the present invention is not limited thereto and conversely, it may be a p- . The first and second conductivity type semiconductor layers 130 and 150 may be formed of a nitride semiconductor such as Al x In y Ga 1-xy N (0? X? 1, 0? Y? 1, 0? 1). However, other materials such as AlGaInP-based semiconductor and AlGaAs-based semiconductor may also be used.

The active layer 140 disposed between the first and second conductivity-type semiconductor layers 130 and 150 emits light having a predetermined energy by recombination of electrons and holes, and the quantum well layer 10 and the quantum barrier layer The quantum well layer 10 is made of InGaN (the In content can be changed) and the quantum well layer 10 is made of InGaN (the In content can be changed) when the quantum well layer 20 is a multi-quantum well (MQW) 20 may be made of GaN.

In the present embodiment, the quantum barrier layer 20 has a band gap energy structure in which the influence of the piezoelectric polarization is relaxed and the recombination efficiency of electrons and holes is increased. Accordingly, the so-called droop phenomenon in which the luminous efficiency is gradually reduced when a high current is applied can be improved, and a detailed description thereof will be given later.

The first and second conductive semiconductor layers 130 and 150 and the active layer 140 may be formed by metal organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE) '), Molecular beam epitaxy (MBE), and the like.

The first and second electrodes 130a and 150a are electrically connected to the first and second conductivity type semiconductor layers 130 and 150 to provide driving power to the light emitting device, A material selected from known electroconductive materials such as Ag, Al, Ni, Cr, Pd, Cu, Pt, Sn, W, Au, Rh, Ir, Ru, Mg, Zn and the like by vapor deposition, . Ag / Ag / Ag / Ni / Al / Zn / Al / Ag / Pd / The present invention is not limited to the above-mentioned materials, and thus it is not limited as long as it is a conductive material, and the electrode (s) As shown in FIG.

Meanwhile, an ohmic electrode layer 160 may be formed between the second conductive semiconductor layer 150 and the second electrode 150a. The ohmic electrode layer 160 may be formed of a material having electrical ohmic characteristics with respect to the second conductive semiconductor layer 150. For example, The ohmic electrode layer 160 may be formed of a transparent material such as ITO, CIO, or ZnO having a high light transmittance and relatively good ohmic contact performance among the materials for the transparent electrode. May be formed of a conductive oxide.

For example, the first and second electrodes 130a and 150a may be formed in a structure in which the light generated in the active layer 140 is emitted to the outside via the first conductivity type semiconductor layer 130. For example, In the case of a so-called flip-chip type light emitting device mounted on the ohmic electrode layer 160, the ohmic electrode layer 160 may be formed of a light reflective material, for example, a highly reflective metal. However, the ohmic electrode layer 160 is not necessarily a necessary element in the present embodiment, and may be omitted in some cases.

1, the first and second electrodes 130a and 150a are disposed on the first conductivity type semiconductor layer 130 and the ohmic electrode layer 160, respectively. However, The electrodes may be formed at various positions of the light emitting structure including the first and second conductive semiconductor layers 130 and 150 and the active layer 140. [

2 is an energy band diagram for more specifically illustrating the active layer 140 according to an embodiment of the present invention.

For specific contrast, FIG. 2 (a) shows the energy band diagram of the active layer implemented with the quantum well layer 10 'and the quantum barrier layer 20' without doping the impurity, together with the wave function of the carrier.

In the case of nitride semiconductors grown on a polar surface such as the C face of a sapphire substrate, an electrostatic field is generated inside due to spontaneous polarization of Ga atoms and N atoms and piezoelectric polarization due to strain due to lattice constant mismatch. 2 (a) can cause distortion of the energy band of the active layer.

Specifically, referring to the energy level of the conduction band E c , the conduction band energy level of the quantum well layer 10 'is lowered toward the direction (right side) in which the p-type nitride semiconductor layer is disposed, The conduction band energy level of the layer 20 'may protrude from both interfaces contacting the quantum well layer 10', but falling down may occur in the region between them. Thus, the peak of the wave function (A) representing the distribution of electrons appears biased to the side (right side) where the p-type nitride semiconductor layer is disposed at the center, and the wave function B The wave function A and the wave function B of the electron are located opposite to each other in the quantum well layer 10 ' The efficiency of light recombination is proportional to the overlapping area where the two wave functions are overlapped, and the efficiency of recombination of electrons and holes is decreased.

Particularly, the reduction of the luminous efficiency due to the internal electrostatic field induced by the piezoelectric polarization is pointed out as a main cause of the semiconductor light emitting device droop phenomenon.

The semiconductor light emitting device according to the present embodiment employs the active layer 140 having the inner barrier layer 22 and the quantum barrier layer 20 including the guide layers 21a and 21b.

2 (b), the quantum barrier layer 20 according to the present embodiment includes first and second guide layers 21a and 21b doped with n-type impurities, first and second guide layers 21a and 21b, And an inner barrier layer 22 disposed between the layers 21a and 21b and doped with a p-type impurity. The guide layers 21a and 21b are disposed on both sides of the inner barrier layer 22 to prevent the p-type impurity doped in the inner barrier layer 22 from being mixed into the quantum well layer 10 , It is possible to ensure that each of the quantum barrier layer 20 and the quantum well layer 10 has better crystallinity.

For example, the n-type impurity concentrations of the first and second guide layers 21a and 21b may be 5 × 10 17 / cm 3 or more and 2 × 10 19 / cm 3 or less, respectively, The p-type impurity concentration of the barrier layer 22 may be 5 × 10 18 / cm 3 or more and 5 × 10 19 / cm 3 or less.

According to the present embodiment, the internal electrostatic field applied to the active layer 140 can be relaxed, and thus the recombination efficiency of electrons and holes can be improved. Specifically, when the quantum barrier layer 20 is doped with the n-type impurity, the energy level of the conduction band is lowered to a certain level. Conversely, when the p-type impurity is doped, Can be increased to a certain level.

This is because the semiconductor region doped with the n-type impurity is provided with the donor level so that the Fermi level is increased to a certain level as compared with the intrinsic semiconductor to which the impurity is not doped. Conversely, the semiconductor region doped with the p- As a result, the quantum barrier layer 20 according to the present embodiment is formed by the first and second guide layers 21a and 21b doped with the n-type impurity, And the inner barrier layer 22 doped with the p-type impurity is included, thereby mitigating the distortion of the energy band and the influence of the internal electrostatic field and effectively improving the mismatch of wave function of electrons and holes. According to this, since the efficiency of recombination of electrons and holes is increased, a semiconductor light emitting device with improved internal quantum efficiency can be obtained.

In addition, the semiconductor light emitting device of this embodiment can be controlled so as to have better optical characteristics by controlling the impurity concentration ratios of the guide layers 21a and 21b and the inner barrier layer 22, respectively. This will be described in more detail with reference to FIG.

3 shows a semiconductor light emitting device according to another embodiment of the present invention.

3, the semiconductor light emitting device according to the present embodiment includes a substrate 110, a first conductive semiconductor layer 130 formed on the substrate 110, a first conductive semiconductor layer 130, An active layer 140 formed on the active layer 140 and including a quantum well layer 10 and a quantum barrier layer 20; a second conductive semiconductor layer 150 formed on the active layer 140; And first and second electrodes 130a and 150a electrically connected to the two-conductivity-type semiconductor layers 130 and 150, respectively.

In the present embodiment, the quantum barrier layer 20 is disposed between the first and second guide layers 21a and 21b doped with n-type impurities and the first and second guide layers 21a and 21b and an inner barrier layer 22 doped with a p-type impurity. Hereinafter, the same elements as those described in the previous embodiment will be omitted, and only modified configurations will be described.

In the present embodiment, the n-type impurity concentrations of the first and second guide layers 21a and 21b are defined as N n1 and N n2 , respectively, and the p-type impurity concentration of the inner barrier layer 22 is N p When defined,

Figure pat00003
The closer to the second conductivity type semiconductor layer 150, the smaller the value can be. More specifically, for example,
Figure pat00004
May be gradually decreased as the distance from the second conductivity type semiconductor layer 150 is in a range of 1 to 300. [

This is because the more the p-type impurity of each inner barrier layer 22 included in the plurality of quantum barrier layers 20 is closer to the second conductivity type semiconductor layer 150 or the more the quantum barrier layer 20 is doped, The n-type impurity of each of the first and second guide layers 21a and 21b included in the first conductive semiconductor layer 130 may be less doped as it is closer to the first conductive semiconductor layer 130. [

In addition,

Figure pat00005
Value may be realized by varying the thickness ratio of each guide layer and the inner barrier layer 22 even if the concentration of the impurity is not changed. For example, each of the inner barrier layers 22 included in the plurality of quantum barrier layers 20 is thicker (d a <d b <d c ) as it is closer to the second conductivity type semiconductor layer 150, or, the first and second guide layers (21a, 21b) respectively, the second closer to the conductive type semiconductor layer 150 is thin in thickness is formed (t 1a + t 1b> t 2a + t 2b> t 3a + t 3b ),
Figure pat00006
The second conductivity type semiconductor layer 150 may be formed to have a smaller value. In this case, though not limited thereto, the thickness of the inner barrier layer 22 is in the range of 1.5 ANGSTROM to 13 ANGSTROM, and each of the first and second guide layers 21A and 21B is in the range of 15 ANGSTROM to 2.5 ANGSTROM Lt; / RTI &gt;

Meanwhile, the second conductive semiconductor layer 150 may be a p-type semiconductor layer, but it is not limited thereto, and may be an n-type semiconductor layer. Specific characteristics obtained when the second conductivity type semiconductor layer 150 is an n-type semiconductor layer will be described later, and characteristics obtained when the second conductivity type semiconductor layer 150 is a p- .

When the second conductive semiconductor layer 150 is a p-type semiconductor layer, it can be understood that the concentration ratio of the p-type impurity increases as the quantum barrier layer 20 is closer to the p-type semiconductor layer.

In this case, the phenomenon that electrons injected into the active layer 140 overflows the second conductive semiconductor layer 150 (p-type semiconductor layer) can be effectively reduced.

The electrons injected from the first conductivity type semiconductor layer 130 (n-type semiconductor layer) into the active layer 140 are injected into the quantum well layer 10) to the second conductive semiconductor layer 150 (p-type semiconductor layer) through the active layer 140 without being bonded to the holes.

However, according to this embodiment, the concentration ratio of the p-type impurity increases as the quantum barrier layer 20 is closer to the p-type semiconductor layer. In this case, the quantum barrier layer 20 20 functioning to prevent electrons from easily flowing into the p-type semiconductor layer can prevent electrons from overflowing.

Of course, an electron blocking layer having a large band gap energy may be disposed between the active layer 140 and the p-type semiconductor layer in order to prevent electrons from overflowing. Generally, the band gap energy of the electron blocking layer is large. There is a problem in that the mobility is deteriorated and the problem of raising the driving voltage is pointed out. However, in the case of this embodiment, it is possible to effectively prevent the electron overflow without forming a separate electron blocking layer, and to sufficiently compensate for the low mobility of holes due to the p-type impurity contained in the inner barrier layer 22 Therefore, a favorable effect can be obtained in terms of both the driving voltage reduction and the internal quantum efficiency.

Meanwhile, the second conductive semiconductor layer 150 may be an n-type semiconductor layer. That is, it can be understood that the closer the p-type impurity concentration ratio of the quantum barrier layer 20 is to the n-type semiconductor layer, the larger it can be understood. In this case, the quantum barrier layer 20 can more effectively compensate the low mobility of holes.

The recombination of electrons and holes is not uniformly generated in the entirety of the plurality of quantum well layers 10 provided in the active layer 140. In most of the quantum well layers 10, the inefficiency occurring only in the region close to the p-type semiconductor layer is pointed out.

However, when the concentration of the p-type impurity in the quantum barrier layer 20 increases as the n-type semiconductor layer is closer to the n-type semiconductor layer as in the present embodiment, the low mobility of holes can be more effectively compensated, The recombination ratio of electrons and positive spaces can also be increased.

4 shows a semiconductor light emitting device according to still another embodiment of the present invention.

4, the semiconductor light emitting device according to the present embodiment includes a substrate 110, a first conductive semiconductor layer 130 formed on the substrate 110, a first conductive semiconductor layer 130, An active layer 140 formed on the active layer 140 and including a quantum well layer 10 and a quantum barrier layer 20; a second conductive semiconductor layer 150 formed on the active layer 140; And first and second electrodes 130a and 150a electrically connected to the two-conductivity-type semiconductor layers 130 and 150, respectively.

In the present embodiment, the quantum barrier layer 20 is disposed between the first and second guide layers 21a and 21b doped with n-type impurities and the first and second guide layers 21a and 21b and an inner barrier layer 22 doped with a p-type impurity and is disposed between the first guide layer 21a, the inner barrier layer 22, and the second guide layer 21b, An undoped undoped barrier layer 24 is disposed.

That is, the undoped barrier layer 24 is formed between the first guide layer 21a doped with the n-type impurity and the inner barrier layer 22 doped with the p-type impurity, and between the inner barrier layer 22 and the second guide layer 22, (21b). In this case, impurities can be prevented from being mixed with each other.

The present embodiment can be applied to various embodiments described above in the foregoing embodiments. That is, according to this embodiment, the internal quantum efficiency and droop phenomenon of the light emitting device can be effectively improved.

5 is experimental result data of a semiconductor light emitting device according to an embodiment of the present invention.

5A is a graph of internal quantum efficiency versus current density (A / cm 2 ) applied to the semiconductor light emitting device. FIG. 5B is a graph showing the R region enlarged in FIG. It is a graph.

Here, (i) and (ii) show the case where the undoped semiconductor layer is used as the quantum barrier layer 20 and the case where the semiconductor layer in which the n-type impurity and the p-type impurity are doped together Of the semiconductor light emitting device. In addition, (iii) and (iv) show a case in which a quantum barrier having first and second guide layers doped with n-type impurities and an inner barrier layer disposed between the guide layers and doped with p-type impurity is employed Of the semiconductor light emitting device. Particularly, the thicknesses of the inner barrier layers 22 of (iii) and (iv) were set to 5 Å and 10 Å, respectively.

5 the maximum value (m) and, current densities of (a) Referring to Figure 5 (b) with the respective (i) to the internal quantum efficiency is represented by the semiconductor light-emitting device of (iv) (IQE) 35A / cm 2 The internal quantum efficiency value (a) shown in Table 1 is summarized as shown in Table 1 below. Here, the droplet rate was calculated as a ratio of the internal quantum efficiency (a) at a current density of 35 A / cm 2 to a maximum internal quantum efficiency (m). (

Figure pat00007
)

Maximum IQE (%) IQE (%) when applied at 35 A / cm 2 Rate (%) (i) 83.6 76.9 8.01 (ii) 84.6 77.5 8.40 (iii) 82.2 76.8 6.52 (iv) 80.7 76.1 5.66

According to the above results, the semiconductor light emitting devices of (iii) and (iv) according to an embodiment of the present invention can realize that although the maximum internal quantum efficiency is reduced to a certain level, .

In particular, as the current applied to the semiconductor light emitting device increases as shown in FIG. 5A, the semiconductor light emitting device according to this embodiment exhibits improved internal quantum efficiency as compared with the embodiments (i) and (ii) can confirm.

The present invention is not limited to the above-described embodiment and the accompanying drawings, but is intended to be limited by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

110: substrate 120: buffer layer
130: first conductivity type semiconductor layer 140: active layer
150: second conductivity type semiconductor layer 160: ohmic electrode layer
130a: first electrode 150a: second electrode
10: quantum well layer 20: quantum barrier layer
21a: first guide layer 21b: second guide layer
22: inner barrier layer 24: undoped barrier layer

Claims (10)

A first conductive semiconductor layer;
An active layer formed on the first conductive semiconductor layer, the active layer including a quantum barrier layer and a quantum well layer; And
And a second conductivity type semiconductor layer formed on the active layer,
Wherein the quantum barrier layer comprises first and second guide layers doped with n-type impurities and an inner barrier layer disposed between the first and second guide layers and doped with p-type impurities. device.
The method according to claim 1,
Wherein the quantum barrier layer and the quantum well layer are each a plurality of layers,
Wherein the plurality of quantum barrier layers and the plurality of quantum well layers are alternately arranged.
3. The method of claim 2,
Each of the plurality of quantum barrier layers
Figure pat00008
And a value of 1 or more and 300 or less.
(Where N p is the p-type impurity concentration of the inner barrier layer and N n1 and N n2 are the n-type impurity concentration of the first and second guide layers)
The method of claim 3,
The quantum barrier layer
Figure pat00009
Value is closer to the second conductivity type semiconductor layer.
3. The method of claim 2,
Wherein the p-type impurity concentration of the inner barrier layer included in the plurality of quantum-
And the second conductive semiconductor layer is closer to the second conductive semiconductor layer.
3. The method of claim 2,
Wherein the thickness of the inner barrier layer included in the plurality of quantum barrier layers is a thickness of the inner barrier layer,
And the second conductive semiconductor layer is closer to the second conductive semiconductor layer.
The method according to claim 1,
Wherein the n-type impurity concentration of the first and second guide layers is 5 × 10 17 / cm 3 to 2 × 10 19 / cm 3, respectively .
The method according to claim 1,
And the p-type impurity concentration of the inner barrier layer is not less than 5 x 10 18 / cm 3 and not more than 5 x 10 19 / cm 3 .
The method according to claim 1,
Wherein the thickness of the inner barrier layer is 1.5 ANGSTROM or more and 13 ANGSTROM or less.
The method according to claim 1,
And an undoped barrier layer which is disposed between the first guide layer, the inner barrier layer and the second guide layer and is not doped with n-type and p-type impurities.
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