KR20140099865A - 광전지용 전도성 기판 - Google Patents

광전지용 전도성 기판 Download PDF

Info

Publication number
KR20140099865A
KR20140099865A KR1020147012293A KR20147012293A KR20140099865A KR 20140099865 A KR20140099865 A KR 20140099865A KR 1020147012293 A KR1020147012293 A KR 1020147012293A KR 20147012293 A KR20147012293 A KR 20147012293A KR 20140099865 A KR20140099865 A KR 20140099865A
Authority
KR
South Korea
Prior art keywords
layer
selenization
molybdenum
metal
barrier layer
Prior art date
Application number
KR1020147012293A
Other languages
English (en)
Korean (ko)
Inventor
예르크 팜
마티유 우리엔
제라드 루이텐베르크
카를로스 레이데르
안드레스 헤이스
에르완 마헤
델핀 뒤퓌
Original Assignee
쌩-고벵 글래스 프랑스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쌩-고벵 글래스 프랑스 filed Critical 쌩-고벵 글래스 프랑스
Publication of KR20140099865A publication Critical patent/KR20140099865A/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020147012293A 2011-11-09 2012-11-09 광전지용 전도성 기판 KR20140099865A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1160210 2011-11-09
FR1160210A FR2982422B1 (fr) 2011-11-09 2011-11-09 Substrat conducteur pour cellule photovoltaique
PCT/FR2012/052586 WO2013068702A1 (fr) 2011-11-09 2012-11-09 Substrat conducteur pour cellule photovoltaïque

Publications (1)

Publication Number Publication Date
KR20140099865A true KR20140099865A (ko) 2014-08-13

Family

ID=47291106

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147012293A KR20140099865A (ko) 2011-11-09 2012-11-09 광전지용 전도성 기판

Country Status (8)

Country Link
US (1) US20140338741A1 (es)
EP (1) EP2777075B1 (es)
JP (1) JP6096790B2 (es)
KR (1) KR20140099865A (es)
CN (1) CN103329277B (es)
ES (1) ES2661862T3 (es)
FR (1) FR2982422B1 (es)
WO (1) WO2013068702A1 (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2983642B1 (fr) * 2011-12-05 2014-01-03 Nexcis Interface perfectionnee entre une couche i-iii-vi2 et une couche de contact arriere, dans une cellule photovoltaique.
US20140030843A1 (en) * 2012-07-26 2014-01-30 International Business Machines Corporation Ohmic contact of thin film solar cell
EP2871681A1 (en) * 2013-11-07 2015-05-13 Saint-Gobain Glass France Back contact substrate for a photovoltaic cell or module
FR3013507B1 (fr) * 2013-11-15 2015-11-20 Saint Gobain Substrat de contact arriere pour cellule photovoltaique
KR101939687B1 (ko) 2014-01-31 2019-01-18 퓨얼 셀 에너지, 인크 수소 생성을 위한 개질기-전해조-정제기(ｒｅｐ) 어셈블리, 이를 통합한 시스템들 및 수소를 생성하는 방법
DE102014223485A1 (de) * 2014-11-18 2016-05-19 Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg Schichtaufbau für eine Dünnschichtsolarzelle und Herstellungsverfahren
WO2017087405A1 (en) 2015-11-16 2017-05-26 Fuelcell Energy, Inc. System for capturing co2 from a fuel cell
EP3425716A1 (en) 2015-11-16 2019-01-09 Fuelcell Energy, Inc. Energy storage using an rep with an engine
CA3005628C (en) 2015-11-17 2021-05-25 Fuelcell Energy, Inc. Fuel cell system having enhanced co2 capture
CA3107519C (en) 2015-11-17 2023-01-31 Fuelcell Energy Inc. Hydrogen and carbon monoxide generation using an rep with partial oxidation
DE202015106923U1 (de) 2015-12-18 2016-01-22 Saint-Gobain Glass France Elektronisch leitfähiges Substrat für Photovoltaikzellen
US11339333B2 (en) 2016-04-21 2022-05-24 Fuelcell Energy, Inc. Fluidized catalytic cracking unit system with integrated reformer-electrolyzer-purifier
US10897055B2 (en) 2017-11-16 2021-01-19 Fuelcell Energy, Inc. Load following power generation and power storage using REP and PEM technology
US11495806B2 (en) 2019-02-04 2022-11-08 Fuelcell Energy, Inc. Ultra high efficiency fuel cell power generation system
JP7086304B2 (ja) * 2019-02-06 2022-06-17 ファースト・ソーラー・インコーポレーテッド 光起電デバイス用の金属酸窒化物バック接点層
KR102077768B1 (ko) * 2019-12-16 2020-02-17 한국과학기술연구원 박막 태양전지 모듈 구조 및 이의 제조 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4442824C1 (de) 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
FR2732696B1 (fr) * 1995-04-06 1997-06-20 Centre Nat Rech Scient Procede de preparation d'un film d'oxyde ou d'hydroxyde d'un element des colonnes ii ou iii de la classification, et les structures composites comprenant un tel film
FR2820241B1 (fr) * 2001-01-31 2003-09-19 Saint Gobain Substrat transparent muni d'une electrode
AU2003275239A1 (en) * 2002-09-30 2004-04-23 Miasole Manufacturing apparatus and method for large-scale production of thin-film solar cells
SE0400631D0 (sv) * 2004-03-11 2004-03-11 Forskarpatent I Uppsala Ab Thin film solar cell and manufacturing method
EP2115783A2 (en) * 2007-01-31 2009-11-11 Jeroen K.J. Van Duren Solar cell absorber layer formed from metal ion precursors
FR2922364B1 (fr) * 2007-10-12 2014-08-22 Saint Gobain Procede de fabrication d'une electrode en oxyde de molybdene
FR2924863B1 (fr) 2007-12-07 2017-06-16 Saint Gobain Perfectionnements apportes a des elements capables de collecter de la lumiere.
JP4829926B2 (ja) * 2008-05-29 2011-12-07 本田技研工業株式会社 太陽電池及び太陽電池の製造方法
US8110738B2 (en) * 2009-02-20 2012-02-07 Miasole Protective layer for large-scale production of thin-film solar cells
US8134069B2 (en) * 2009-04-13 2012-03-13 Miasole Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
US20110162696A1 (en) * 2010-01-05 2011-07-07 Miasole Photovoltaic materials with controllable zinc and sodium content and method of making thereof
US20110247687A1 (en) * 2010-04-08 2011-10-13 Minglong Zhang Thin film solar cell and method for making the same
US8772076B2 (en) * 2010-09-03 2014-07-08 Solopower Systems, Inc. Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells
US20120097234A1 (en) * 2010-10-26 2012-04-26 International Business Machines Corporation Using Diffusion Barrier Layer for CuZnSn(S,Se) Thin Film Solar Cell
KR101219948B1 (ko) * 2011-01-27 2013-01-21 엘지이노텍 주식회사 태양광 발전장치 및 제조방법

Also Published As

Publication number Publication date
ES2661862T3 (es) 2018-04-04
CN103329277B (zh) 2016-12-14
WO2013068702A1 (fr) 2013-05-16
US20140338741A1 (en) 2014-11-20
FR2982422B1 (fr) 2013-11-15
JP6096790B2 (ja) 2017-03-15
EP2777075A1 (fr) 2014-09-17
JP2015502030A (ja) 2015-01-19
FR2982422A1 (fr) 2013-05-10
EP2777075B1 (fr) 2018-01-17
CN103329277A (zh) 2013-09-25

Similar Documents

Publication Publication Date Title
KR20140099865A (ko) 광전지용 전도성 기판
US8809674B2 (en) Back electrode configuration for electroplated CIGS photovoltaic devices and methods of making same
CN103180970A (zh) 用于薄膜太阳能电池的扩散阻挡层
US8987590B2 (en) Thin film solar cells
JP6313428B2 (ja) 光電池又は光電池モジュール用のバックコンタクト基材
US20160064580A1 (en) Back contact substrate for a photovoltaic cell or module
EP2485272A2 (en) Solar power generation apparatus and manufacturing method thereof
US20160064581A1 (en) Back contact substrate for a photovoltaic cell or module
US9202943B2 (en) Niobium thin film stress relieving layer for thin-film solar cells
EP2871681A1 (en) Back contact substrate for a photovoltaic cell or module
CN103339741B (zh) 太阳能电池设备及其制造方法
JP6147926B2 (ja) ナトリウムインジウム硫化物緩衝層を有する薄膜太陽電池のための層システム
CN104022179A (zh) 形成太阳能电池的缓冲层的方法和由此形成的太阳能电池
US9520530B2 (en) Solar cell having doped buffer layer and method of fabricating the solar cell
US20100139757A1 (en) Photovoltaic cell structure
KR20180103676A (ko) 나트륨 인듐 술피드 버퍼 층을 갖는 박층 태양 전지용 층 시스템의 제조 방법
EP2876692A1 (en) Solar cell and method for manufacturing the same
KR20110001798A (ko) 태양전지 및 이의 제조방법
KR20110045181A (ko) 태양전지 및 이의 제조방법
US20140261689A1 (en) Method of manufacturing a photovoltaic device
CN105706247A (zh) 用于光伏电池的后接触基板

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application