KR20140087759A - Photoresist stripper composition - Google Patents

Abstract

The present invention relates to a photoresist stripper composition which improves spreadability of a polyimide alignment layer inducing the alignment of liquid crystal by being applied to the upper side of an inorganic insulating film and suppresses galvanic corrosion by preventing corrosion on metal wiring composed of two or three-layered metal wires containing aluminum, copper, tungsten, molybdenum, titanium, and niobium or an alloy thereof.

Description

[0001] PHOTORESIST STRIPPER COMPOSITION [0002]

The present invention improves the spreadability of a polyimide alignment film which is applied on an organic insulating film through a photoresist stripping process on an organic insulating film in manufacturing a thin film transistor (TFT) during a manufacturing process of a flat panel display substrate, / Photoresist stripping liquid composition having excellent ability to remove photoresist residue by wet etching, excellent corrosion preventing effect due to galvanic phenomenon on metal wiring, and excellent cleaning ability.

Recently, as the demand for high-resolution implementation of flat panel displays increases, efforts to increase the number of pixels per unit area have continued. According to this tendency, reduction of the wiring width is required, which causes an overcurrent, an orientation angle of the liquid crystal increases, leakage of the back light, and ultimately an increase in power consumption. In order to cope with this problem, an insulator for preventing an overcurrent and a current leakage has been required, and an organic insulating film has been used. One of the problems encountered in using the organic insulating film is the floating phenomenon of the alignment film which is applied on the organic insulating film to induce the alignment of the liquid crystal. This is due to the poor spreadability and applicability of the alignment film applied on the organic insulating film.

Korean Patent Laid-Open No. 10-2006-0028523 proposes a photoresist stripper that does not cause corrosion of a metal wiring including alcohol amine, glycol ether, N-methylpyrrolidone and a chelating agent. However, The spreading property of the polyimide alignment film can not be improved when the polyimide alignment film is applied and the polyimide alignment film can be lifted.

Therefore, in order to propose a method for improving the spreadability of such an alignment layer, the present invention does not require a separate process, and a method of utilizing the photoresist stripper composition used for forming the organic insulation layer pattern and a composition for improving the spreadability of the alignment layer A photoresist stripping liquid composition containing the photoresist stripper is proposed.

KR 10-0028523 B

It is another object of the present invention to provide a photoresist stripper composition for improving the spreadability of an orientation film through a photoresist stripping process on an organic insulating film in a manufacturing process of a flat panel display substrate.

It is another object of the present invention to provide a photoresist stripper liquid composition which is excellent in the ability to remove photoresist residue by dry / wet etching.

(B) an amine compound represented by the following formula (2), (c) a water-soluble organic solvent, and (d) a corrosion inhibitor represented by the following formula A photoresist stripper liquid composition applied on the organic insulating film.

In the general formula 1 wherein n is 8 to 100, R ₁ is hydrogen, a substituted or unsubstituted alkyl group, an alkylene group, an allyl group, an allyl group, an alkoxy group, an aryl group, an aryloxy group and an amino group, R ₁ is R ₂ is an alkyl group of 1 to 6 carbon atoms, x is a rational number of 0 to 3, m is an integer of 1 to 10, and R ₂ may be the same or different from each other .

R ₃ , R ₄ and R ₅ are each independently selected from the group consisting of hydrogen, a hydroxyl group, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a hydroxy group having 1 to 10 carbon atoms, An alkyl group, a carboxyl group, an alkoxy group having 1 to 10 carbon atoms which is substituted or unsubstituted with a hydroxyl group, an amino group substituted or unsubstituted with an alkyl group having 1 to 4 carbon atoms, a phenyl group, or a benzyl group, and R ₄ and R ₅ form a ring .

The photoresist stripper liquid composition may further include (e) deionized water.

In addition, the present invention provides a method of manufacturing a flat panel display substrate including a step of cleaning the flat panel display substrate using the photoresist stripper liquid composition.

The photoresist stripper solution composition according to the present invention improves the spreadability of an orientation film applied on an organic insulating film and is excellent in the ability to remove a residue of a photoresist modified by dry / wet etching, and a galvanic phenomenon It is possible to prevent corrosion caused by a galvanic phenomenon of a metal wiring made of aluminum, copper, tungsten, molybdenum, titanium, niobium, and alloy metal wiring comprising the same in a double or triple laminate, .

In addition, when the photoresist stripper composition according to the present invention is used, the defective rate of the flat panel display device can be reduced, thereby reducing the cost of the entire manufacturing process.

1 is a schematic view showing a method of dropping a polyimide alignment liquid on an organic insulating film substrate immersed in a photoresist stripper composition of Comparative Example 4 at 50 DEG C for 1 minute using an apparatus for an ink jet printer (Dimatix, FUJIFILM) And the diameter of the orientation film was measured.
FIG. 2 is a graph showing the results obtained by dropping a polyimide alignment liquid onto an organic insulating film substrate immersed in the photoresist stripper composition of Example 2 at 50 DEG C for 1 minute using an apparatus for an inkjet printer (Dimatix, FUJIFILM) And the diameter of the orientation film was measured.
FIG. 3 is a graph showing the results obtained by dropping a polyimide alignment liquid onto an organic insulating film substrate immersed in the photoresist stripper composition of Example 4 at 50 DEG C for 1 minute using an apparatus for an inkjet printer (Dimatix, FUJIFILM) And the diameter of the orientation film was measured.

Hereinafter, the present invention will be described in more detail.

The present invention improves the spreadability of a polyimide alignment film which is applied on an organic insulating film to induce alignment of a liquid crystal, and it can be used for a metal wiring including aluminum, copper, tungsten, molybdenum, titanium, niobium, To a photoresist stripping liquid composition which does not cause corrosion in a metal wiring made of a laminate and has an effect of suppressing a galvanic phenomenon.

In more detail,

(a) a polyimide alignment film spreadability improver and a galvanic corrosion inhibitor represented by the following formula (1);

(b) an amine compound represented by the following formula (2);

(c) a water-soluble organic solvent; And

(d) a corrosion inhibitor. The present invention relates to a photoresist stripper liquid composition applied on an organic insulating film.

[Chemical Formula 1]

In the general formula 1 wherein n is 8 to 100, R ₁ is hydrogen, a substituted or unsubstituted alkyl group, an alkylene group, an allyl group, an allyl group, an alkoxy group, an aryl group, an aryloxy group and an amino group, R ₁ is R ₂ is an alkyl group of 1 to 6 carbon atoms, x is a rational number of 0 to 3, m is an integer of 1 to 10, and R ₂ may be the same or different from each other .

 (2)

R ₃ , R ₄ and R ₅ are each independently selected from the group consisting of hydrogen, a hydroxyl group, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a hydroxy group having 1 to 10 carbon atoms, An alkyl group, a carboxyl group, an alkoxy group having 1 to 10 carbon atoms which is substituted or unsubstituted with a hydroxyl group, an amino group substituted or unsubstituted with an alkyl group having 1 to 4 carbon atoms, a phenyl group, or a benzyl group, and R ₄ and R ₅ form a ring .

The photoresist stripper liquid composition is applied onto an organic insulating layer to improve the spreadability of the polyimide alignment layer which induces alignment of the liquid crystal, thereby preventing the lifting of the polyimide alignment layer, thereby reducing the defective rate. In addition, And a metal wiring including aluminum, copper, tungsten, molybdenum, titanium, niobium tungsten, molybdenum, titanium, niobium or alloys thereof is formed on a metal wiring made of a double or triple laminate Since it does not cause corrosion, the effect of suppressing the galvanic phenomenon is excellent.

Hereinafter, each component will be described in detail.

(a) a polyimide alignment film spreadability improver represented by the general formula (1) and Galvanic  Corrosion inhibitor

The photoresist stripper composition of the present invention comprises (a) a polyimide alignment film spreadability improver and a galvanic corrosion inhibitor represented by the following formula (1).

[Chemical Formula 1]

In the general formula 1 wherein n is 8 to 100, R ₁ is hydrogen, a substituted or unsubstituted alkyl group, an alkylene group, an allyl group, an allyl group, an alkoxy group, an aryl group, an aryloxy group and an amino group, R ₁ is R ₂ is an alkyl group of 1 to 6 carbon atoms, x is a rational number of 0 to 3, m is an integer of 1 to 10, and R ₂ may be the same or different from each other .

The polyimide alignment film spreadability improver and the galvanic corrosion inhibitor represented by the above formula (1) are polyhedral silsesquioxanes having a variety of shapes such as a random type, a ladder type, a cage type, and a partial cage type Structure, and the structure thereof is not particularly limited.

The polyimide alignment film spreadability improver and the galvanic corrosion inhibitor may improve the spreadability of the polyimide alignment film through the photoresist stripping process on the organic insulating film and may be caused by the galvanic phenomenon in two or more kinds of laminated metal wirings Excellent ability to prevent corrosion.

The polyimide alignment film spreadability improver (a) and the galvanic corrosion inhibitor are preferably contained in an amount of 0.01 wt% to 5 wt%, more preferably 0.05 wt% to 3 wt% with respect to the total weight of the composition. If the content of the polyimide alignment film spreadability improver (a) and the galvanic corrosion inhibitor is less than 0.01% by weight, the improvement degree of spreadability of the polyimide alignment film is not so weak or improved, resulting in lifting of the polyimide alignment film, Corrosion may occur in the aluminum, copper, tungsten, molybdenum, titanium, niobium and alloy metal wirings due to the galvanic phenomenon in the rinsing process. When the amount exceeds 5 wt%, the effect of improving the polyimide orientation film spreadability and corrosion It is not economically advantageous because it is not possible to obtain an improvement in corrosion inhibition effect as the content of the inhibitor increases.

(b) an amine compound represented by the general formula (2)

The photoresist stripper solution composition of the present invention comprises (b) an amine compound represented by the following general formula (2).

(2)

Wherein R ₃ , R ₄ and R ₅ are each independently selected from the group consisting of hydrogen, a hydroxyl group, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a hydroxyalkyl group having 1 to 10 carbon atoms , A carboxyl group, an alkoxy group having 1 to 10 carbon atoms which is substituted or unsubstituted with a hydroxy group, an amino group substituted or unsubstituted with an alkyl group having 1 to 4 carbon atoms, a phenyl group, or a benzyl group, R ₄ and R ₅ may form a ring have.

The amine compound (b) represented by the general formula (2) is preferably an amine compound having at least one hydroxyl group, and specific examples thereof include choline, monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, , N, N-dimethylaminoethanol, N, N-diethylaminoethanol, 2- (2-aminoethylamino) Amino-1-propanol, 4-amino-1-butanol, dibutanolamine, (methoxymethyl) diethanolamine, (Methoxymethyl) aminoethanol, methyl (butoxymethyl) aminoethanol, 2- (2-aminoethoxy) ethanol, dimethyl (methoxymethyl) Hydroxylamine, diethylhydroxylamine, dibutylhydroxylamine, 1- (2-hydroxyethyl) piperidine (2-hydroxyethyl) morpholine, N- (3-hydroxypropyl) morpholine, and the like, and they may be one kind They may be used alone or in combination of two or more.

 The amine compound represented by the above formula (b) (2) may be used as a polymer matrix of a photoresist modified or crosslinked under various process conditions such as dry or wet etching, ashing, or ion implant processing. And breaks the bonds existing in the molecule or between the molecules, thereby forming vacancies in the structurally fragile portions in the resists remaining on the substrate, thereby deforming the photoresist into an amorphous polymer gel lump state, Allowing the attached photoresist to be easily removed.

The amine compound represented by the formula (2) (b) is preferably contained in an amount of 1 to 40% by weight based on the total weight of the composition. (b) The amine compound is more preferably contained in an amount of 1 to 20% by weight, and most preferably 3 to 15% by weight based on the total weight of the composition. When the photoresist stripper composition of the present invention is contained in the above amounts, the photoresist stripper composition of the present invention is insufficient in the effect of peeling the photoresist, and may be caused by a galvanic effect on aluminum, copper, tungsten, molybdenum, titanium, niobium, Exhibit favorable peeling properties without the problem of a rapid increase in corrosion rate.

(c) a water-soluble organic solvent

Specific examples of the water-soluble organic solvent (c) used in the present invention include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol Monoethyl ether, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol Ether compounds such as monomethyl ether, polyethylene glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether and propylene glycol monomethyl ether acetate; Alcohols such as perfluoro alcohol, tetrahydroperfuryl alcohol, diacetone alcohol, ethylene glycol and glycerin; Pyrrolidone compounds such as N-methyl pyrrolidone (NMP) and N-ethyl pyrrolidone; Imidazolidinone compounds such as 1,3-dimethyl-2-imidazolidinone and 1,3-dipropyl-2-imidazolidinone; lactone compounds such as? -butyrolactone; Sulfoxide compounds such as dimethylsulfoxide (DMSO) and sulfolane; Phosphate compounds such as triethyl phosphate, tributyl phosphate and the like; Carbonate compounds such as dimethyl carbonate, ethylene carbonate and the like; N, N-dimethylacetamide, N- (2-hydroxyethyl) acetamide, 3-methoxypyridine, N, N-dimethylformamide, Amide compounds such as N, N-dimethylpropionamide, 3- (2-ethylhexyloxy) -N, N-dimethylpropionamide, 3-butoxy-N, N-dimethylpropionamide and dimethyl lactamide These can be used alone or in admixture of two or more.

The water-soluble organic solvent (c) serves to dissolve the photoresist polymer gelled by the amine compound (b), and further facilitates the removal of the peeling solution by water in rinsing the deionized water after peeling off the photoresist Minimization of reattachment / reattachment of the exfoliation liquid and dissolved photoresist.

The water-soluble organic solvent (c) is preferably contained in an amount of 30 to 95% by weight based on the total weight of the composition. When it is contained in the above-mentioned content range, it is advantageous to exhibit the removal performance of photoresist polymer degraded or crosslinked by etching or the like, and at the same time, it is advantageous in the effect of increasing the number of treatments. If the content of the water-soluble polar solvent is less than 30% by weight, the solubility of the photoresist is lowered and the number of treatments is decreased, and a complete foreign matter removal effect can not be obtained during rinsing with deionized water. Also, when the content of the water-soluble polar solvent exceeds 95% by weight, the content of the basic compound is excessively decreased, and the removability of the crosslinked or deteriorated photoresist is reduced.

(d) Corrosion inhibitor

The photoresist stripper solution composition of the present invention further includes (d) a corrosion inhibitor. Specific examples of the corrosion inhibitor (d) include benzotriazole, tolythriazole, methyltolytriazole, 2,2 '- [[[benzotriazole] methyl] imino] bisethanol, 2,2'- Methyl] imino] bis methanol, 2,2 '- [[[ethyl-1-hydrogen benzotriazol-1-yl] methyl] Ethanol, 2,2 '- [[[methyl-1-hydrogen-benzotriazol-1-yl] methyl] imino] Yl] methyl] imino] bismethylamine, 2,2 '- [[[aminomethyl] 1 -hydrogen-benzotriazol-1-yl] methyl] imino] bis-ethanol, and they may be used singly or in combination of two or more.

The corrosion inhibitor (d) is excellent in the corrosion inhibiting ability of the metal wiring including aluminum and / or the metal wiring including copper, and particularly has excellent anticorrosive power against copper and metal containing it. The corrosion inhibitor (d) is preferably contained in an amount of 0.01 to 5% by weight based on the total weight of the composition. If the content of the corrosion inhibitor (d) is less than 0.01% by weight, corrosion may occur in the copper or a metal wiring including the corrosion inhibitor in the peeling process or the rinsing process with deionized water. If the content of the corrosion inhibitor is more than 5% It is not economically advantageous because improvement of the corrosion prevention effect according to the present invention can not be obtained.

(e) Deionized water

The photoresist stripper composition of the present invention may further comprise (e) deionized water. The (e) deionized water improves the activation of the amine compound (b) to increase the peeling speed of the photoresist, and in particular, improves the peeling force of the denatured photoresist by dry / wet etching. It is possible to quickly and completely remove the organic contaminants remaining on the substrate and the photoresist stripper during the rinsing process with the deionized water mixed with the water-soluble organic solvent (c). In addition, it is economical because it is possible to reduce the cost for the TFT manufacturing process by deionized water.

When the (e) deionized water is included, it is preferably included in an amount of 3 wt% to 50 wt% with respect to the total weight of the composition. If the amount is less than 3% by weight, the effect of improving the removal performance of the crosslinked or denatured photoresist can not be obtained by a dry / wet etching process as compared with a composition containing no deionized water. When the amount exceeds 50% by weight, To reduce the number of treatments, and if the substrate is immersed in the peeling liquid for a long time, corrosion of the metal wiring can be caused.

That is, the photoresist stripper solution composition of the present invention comprises (a) 0.01 to 5% by weight of a polyimide alignment film spreadability improver represented by the general formula (1) and a galvanic corrosion inhibitor; (b) 1 to 40% by weight of an amine compound represented by the formula (2), (c) 30 to 95% by weight of a water-soluble organic solvent; (d) 0.01 to 5% by weight of a corrosion inhibitor; And optionally (e) 3 to 50% by weight of deionized water.

As the method of removing the photoresist using the photoresist stripper composition of the present invention, a dipping method is generally used, but other methods such as a spraying method may also be used. As the cleaning agent after treatment with the composition according to the present invention, it is not necessary to use an organic solvent such as alcohol, and it is sufficient to wash with water.

The photoresist stripper composition of the present invention can be advantageously used in a process for removing a semiconductor or an electronic product, particularly a photoresist for a flat panel display.

The present invention provides a method of manufacturing a flat panel display substrate including a step of cleaning a flat panel display substrate using the photoresist stripper liquid composition described above.

More particularly, the present invention relates to a method of manufacturing a semiconductor device, comprising: forming a gate layer, a semiconductor layer, a source / drain and a pixel electrode on a substrate; Forming an organic insulating film on the electrode; And forming an alignment layer on the organic insulating layer. The electrode forming step and the organic insulating layer forming step may include using a photoresist, And the release liquid composition is the photoresist stripper composition of the present invention.

In addition, the present invention provides a flat panel display substrate manufactured according to the method for manufacturing a flat panel display substrate.

Hereinafter, the present invention will be described in more detail by way of examples. However, the following examples are intended to further illustrate the present invention, and the scope of the present invention is not limited by the following examples. The following examples can be appropriately modified and changed by those skilled in the art within the scope of the present invention.

Example

Example  1 to 4 and Comparative Example  1 to 4: Photoresist Peeling liquid  Preparation of composition

The components shown in the following Table 1 were mixed at the composition ratios to prepare photoresist stripper compositions of Examples 1 to 4 and Comparative Examples 1 to 4.

division
(weight%) Orientation film spreadability improving agent and galvanic corrosion inhibitor Amine compound Water-soluble organic solvent Corrosion inhibitor Deionized water Example 1 SQO 0.5 MDEA 10 NMP 88.5 MG One - Example 2 SQO One AEE 3 NMP 30 BTA One 29 MDEA 7 BDG 29 Example 3 SQO One MEA 3 NMP 60 BTA One MDEA 7 MDG 28 Example 4 SQO One MEA 10 NMF 40 BTA One 20 MDG 28 Comparative Example 1 - - - - NMP 50 - - MDG 50 Comparative Example 2 - - MEA 10 NMP 60 BTA One BDG 29 Comparative Example 3 - - MDEA 10 NMF 90 - - Comparative Example 4 - - AEE 3 NMF 30 MG One 30 MDEA 7 BDG 29

SQO: (3- (2-aminoethyl) aminopropyl) methoxytriminated silsesquioxane (DOW CORNING)

MEA: Monoethanolamine

AEE: 2- (2-aminoethylamino) -1-ethanol

MDEA: N-methyldiethanolamine

NMP: N-methylpyrrolidone

BDG: diethylene glycol monobutyl ether

MDG: diethylene glycol monomethyl ether

NMF: N-methylformamide

BTA: benzotriazole

MG: methyl gallate

< Experimental Example  1> Exfoliation Peel force  evaluation

Photoresist (DWG-520, manufactured by Dongwoo Fine-Chem Co., Ltd.) was coated on a glass substrate (first substrate) according to a conventional method in order to confirm the peeling effect of the photoresist peeling composition of Examples 1 to 4 and Comparative Examples 1 to 4, (First substrate) prepared by coating the substrate with a predetermined thickness (2 占 퐉) and curing at 170 占 폚 for 10 minutes and a glass substrate (second substrate) coated with a photoresist modified by dry etching . The photoresist peeling compositions of Examples 1 to 4 and Comparative Examples 1 to 4 were prepared and kept at a constant temperature of 50 캜. Then, a first substrate having a size of 3 cm x 3 cm and a second substrate The time taken for the cured photoresist to be completely removed on each substrate was measured by observing with the naked eye and shown in Table 2 below. Then, the substrate was cleaned with pure water for one minute to remove the peeling liquid remaining on each substrate, and each substrate was completely dried with nitrogen to remove pure water remaining on the substrate after cleaning.

< Experimental Example  2> Exfoliation  Evaluation of polyimide alignment film spreadability

An organic insulating film substrate such as an actual process in which a photoresist was applied on a glass substrate was prepared according to a conventional method for evaluating the spreadability of the polyimide alignment film of the photoresist stripper liquid compositions of Examples 1 to 4 and Comparative Examples 1 to 4. The above stripper liquid composition was maintained at a constant temperature of 50 ° C., and the substrate was immersed for 2 minutes. After washing and drying, the polyimide alignment liquid used in an actual process was measured using an inkjet printer (Dimatix, FUJIFILM) The diameter of the polyimide alignment film formed by dropping was measured and the performance was evaluated. The results are shown in Table 2 and Figs. 1 and 2, and the results are shown as good, good, and poor.

< Experimental Example  3> Peeling liquid  Metal wiring Revolution  evaluation( Galvanic  Corrosion due to development Preventive force  evaluation)

In order to evaluate the corrosion inhibiting ability of the photoresist stripper solution compositions of Examples 1 to 4 and Comparative Examples 1 to 4 according to a conventional method, thin film sputtering was performed on a glass substrate, After the formation of a double or triple laminated film, a pattern was formed using a photoresist, and then a metal film was etched by a wet etching method and a dry etching method, respectively. Al and Cu wiring was exposed. The substrate was kept at a constant temperature of 50 ° C for 30 minutes, washed, dried, and examined under a scanning electron microscope (SEM, Hitachi S-4700) Respectively. The results are shown in the following Table 2, and the results are shown as &quot; good &quot;,&quot; good &quot;,&quot; good &quot;

division Peeling time Polyimide alignment film diameter
Revolution The first substrate The second substrate Diameter (unit: 탆) evaluation Al Cu Example 1 70 sec Not removed 48 ○ ◎ ◎ Example 2 60 sec 60 sec 137 ◎ ◎ △ Example 3 60 sec 100 sec 140 ◎ ◎ ◎ Example 4 60 sec 60 sec 163 ◎ ◎ ◎ Comparative Example 1 Not removed Not removed 24 × ◎ ◎ Comparative Example 2 60 sec 100 sec 24 × × ◎ Comparative Example 3 70 sec Not removed 24 × × × Comparative Example 4 60 sec 60 sec 24 × ◎ ×

As shown in Table 2, when the photoresist stripping solutions of Examples 1 to 4 were used, the spreadability of the polyimide alignment layer (the size of the diameter of the photoresist stripper liquid compositions of Comparative Examples 1 to 4 ) Can be confirmed to be improved, and spreadability (size of diameter) is different according to the amount of SQO. Further, it can be seen that the damping force against the double or triple laminated film including Al and Cu is excellent.

Referring to FIG. 1, when the photoresist stripper composition of Comparative Example 4 was used, the diameter of the polyimide alignment layer formed by dropping the polyimide alignment liquid using an apparatus for an inkjet printer (Dimatix, FUJIFILM) was measured. As a result, It is possible to observe very small polyimide orientation film spreadability as 24 탆.

2, when the photoresist stripper solution composition according to Example 2 is used, the diameter of the polyimide alignment layer formed by dropping the polyimide alignment solution using the equipment for an inkjet printer (Dimatix, FUJIFILM) 137 탆, which indicates that the polyimide alignment film spreadability is improved as compared with the results using the compositions of Comparative Examples 1 to 4.

3, when the photoresist stripper composition according to Example 4 was used, the diameter of the polyimide alignment layer formed by dropping the polyimide alignment solution using an apparatus for an inkjet printer (Dimatix, FUJIFILM) was 163 탆 , And it can be seen that the spreadability of the polyimide alignment film is greatly improved.

Claims (8)

(a) a polyimide alignment film spreadability improver and a galvanic corrosion inhibitor represented by the following formula (1);
(b) an amine compound represented by the following formula (2);
(c) a water-soluble organic solvent; And
(d) a photoresist stripper liquid composition applied on an organic insulating film, which comprises a corrosion inhibitor;
[Chemical Formula 1]

In the general formula 1 wherein n is 8 to 100, R ₁ is hydrogen, a substituted or unsubstituted alkyl group, an alkylene group, an allyl group, an allyl group, an alkoxy group, an aryl group, an aryloxy group and an amino group, R ₁ is R ₂ is an alkyl group of 1 to 6 carbon atoms, x is a rational number of 0 to 3, m is an integer of 1 to 10, and R ₂ may be the same or different from each other .

(2)

R ₃ , R ₄ and R ₅ are each independently selected from the group consisting of hydrogen, a hydroxyl group, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a hydroxy group having 1 to 10 carbon atoms, An alkyl group, a carboxyl group, an alkoxy group having 1 to 10 carbon atoms which is substituted or unsubstituted with a hydroxyl group, an amino group substituted or unsubstituted with an alkyl group having 1 to 4 carbon atoms, a phenyl group, or a benzyl group, and R ₄ and R ₅ form a ring . [2] The composition according to claim 1, which comprises (a) 0.01 to 5% by weight of a polyimide alignment film spreadability improver and a galvanic corrosion inhibitor represented by formula (1) (b) 1 to 40% by weight of an amine compound represented by the formula (2), (c) 30 to 95% by weight of a water-soluble organic solvent; And (d) 0.01 to 5% by weight of a corrosion inhibitor. 3. The photoresist stripper composition according to claim 2, further comprising (e) 3 to 50% by weight of deionized water based on the total weight of the composition. [Claim 2] The method according to claim 1, wherein the amine compound represented by formula (2) is at least one selected from the group consisting of choline, monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, 2- aminoethanol, 2- (ethylamino) Methylaminoethanol, N, N-dimethylethanolamine, N, N-diethylaminoethanol, 2- (2-aminoethylamino) -1- Amino-1-propanol, 4-amino-1-butanol, dibutanolamine, (methoxymethyl) diethanolamine, (hydroxyethyloxymethyl) diethylamine, methyl (Methoxymethyl) aminoethane, methyl (methoxymethyl) aminoethanol, methyl (butoxymethyl) aminoethanol, 2- (2-aminoethoxy) ethanol, dimethylhydroxylamine, diethylhydroxylamine, dibutyl (2-hydroxyethyl) piperazine, 1- (2-hydroxyethyl) methylpiperazine, N- (2-hydroxyethyl) morpholine and N- -Hydroxypropyl) morpholine. The photoresist stripper liquid composition according to claim 1, wherein the organic photoresist stripper liquid composition is a mixture of at least two kinds of photoresist strippers. The method of claim 1, wherein the water-soluble organic solvent (c) is selected from the group consisting of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl Ether, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol monomethyl Ether, polyethylene glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, furfuryl alcohol, tetrahydroperfuryl But are not limited to, alcohols, diacetone alcohols, ethylene glycols, glycerin, N-methylpyrrolidone (NMP), N-ethylpyrrolidone, N, N-dimethylformamide, N, N-dimethylformamide, N, N-dimethylformamide, dimethylsulfoxide, dimethyl sulfoxide (DMSO), sulfolane, sulfoxide compound, triethyl phosphate, tributyl phosphate, dimethyl carbonate, ethylene carbonate, N-dimethylacetamide, N- (2-hydroxyethyl) acetamide, 3-methoxy-N, N-dimethylpropionamide, 3- (2-ethylhexyloxy) -N, N-dimethylpropionamide, 3-butoxy-N, N-dimethylpropionamide and dimethyl lactamide. , A photoresist stripper liquid composition applied on the organic insulating film. The anticorrosive composition according to claim 1, wherein the corrosion inhibitor (d) is selected from the group consisting of benzotriazole, tolythriazole, methyltolytriazole, 2,2 '- [[[benzotriazole] methyl] imino] - [[[methyl-1-hydrogen-benzotriazol-1-yl] methyl] imino] bist methanol, 2,2 ' ] - [[[methyl-1-hydrogen-benzotriazol-1-yl] methyl] imino] bisethanol, 2,2 ' Yl] methyl] imino] bismethylamine and 2,2 '- [[[[methyl- Amine-1-hydrogen-benzotriazol-1-yl] methyl] imino] bisethanol. Forming a gate layer, a semiconductor layer, a source / drain and a pixel electrode on a substrate; Forming an organic insulating film on the electrode; And forming an alignment film on the organic insulating film, the method comprising the steps of:
Wherein the electrode forming step and the organic insulating film forming step comprise using a photoresist and the stripper liquid composition used in the stripping process of the photoresist is the photoresist stripper liquid composition of claim 1 Gt; 7. A flat panel display substrate manufactured according to the method of claim 7.

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