KR20140084978A - Inductor and composition for manufacturing the gap layer of the same - Google Patents

Abstract

The present invention relates to an inductor and a composition for manufacturing a gap layer thereof. The inductor according to the embodiment of the present invention includes a device body and a gap layer which is formed on the device body and includes metal oxide and a shrinkage rate controller. The metal oxide includes at least one among ZrO2, Al2O3, and TiO2.

Description

≪ Desc / Clms Page number 1 > INDUCTOR AND COMPOSITION FOR MANUFACTURING THE GAP LAYER OF THE SAME

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inductor and a composition for fabricating the gap layer. More particularly, the present invention relates to an inductor thinned and improved in capacitance characteristics and a composition for fabricating the gap layer.

With the recent miniaturization and complex functionalization of mobile devices, the miniaturization of electronic components is also progressing. In order to meet this trend, thin-film chip inductors capable of achieving miniaturization and thinning with high inductance characteristics and high Q (high-Q) characteristics are being developed.

A general thin film chip inductor includes a device body having a multilayer structure formed by laminating ceramic insulating sheets, an inner electrode formed on each of the sheets in the device body to form a coil structure, an outer electrode formed on both ends of the device body, And a gap layer for partitioning the internal electrode in the device body. The gap layer is made of a non-magnetic material to cut off the magnetic flux at the center of the device body to reduce a change in inductance L value of the inductor due to current application.

The material of the gap layer is usually a ZnCu ferrite or a Zn-Ti dielectric material, and CuO is added or Fe content is controlled to ensure sinterability. That is, from the viewpoint of the function of the gap layer, it is preferable to use the complete non-magnetic material as the material of the gap layer. However, since the complete non-magnetic material does not secure the sinterability in the manufacturing process of the element body, A material such as CuO is added.

However, when a gap layer is formed as the above-described material, the following problems arise.

First, the gap layer degrades the characteristics of the inductor. Generally, a nickel (Ni) component contained in a material of a device body is diffused into the gap layer and a zinc (Zn) component of the gap layer is diffused into the device body. Due to such a diffusion phenomenon, the thickness of the gap layer becomes substantially thin, and the DC-bias characteristic and the bias-TCL characteristic of the inductor are lowered. In order to prevent this, the thickness of the gap layer must be increased. However, in order to increase the thickness of the gap layer, a thicker gap layer sheet must be used.

Second, the gap layer degrades the capacity characteristics of the inductor. The conventional non-magnetic Zn-Ti ferrite-based dielectric layer diffuses the Ti material into the device body during the firing process for manufacturing the inductor. Particularly, as the firing temperature is increased, the diffusion of the Ti material into the device body becomes larger, which deteriorates the magnetic characteristics of the device body and deteriorates the capacity characteristics of the inductor.

Third, diffusion of the Fe composition and diffusion of the Ni component deteriorate the characteristics of the inductor. In other words, CuO is added to the general gap layer in order to secure sinterability. However, due to the addition of CuO, the gap layer material may have magnetism, and such magnetic properties may be increased by the amount of Cu added. Further, the gap material having a non-magnetic property at room temperature has magnetism due to the diffusion of Fe at a firing temperature of about 900 DEG C or higher. Due to such a diffusion phenomenon, the magnetic property of the element body is lowered, and the capacity of the inductor is lowered.

1. Korean Published Patent No. 10-2011-0116041 2. Korean Patent No. 10-2010-0127878

SUMMARY OF THE INVENTION It is an object of the present invention to provide an inductor having improved DC-bias characteristics and bias-TCL characteristics by preventing diffusion of a gap layer.

SUMMARY OF THE INVENTION An object of the present invention is to provide an inductor having a reduced thickness and improved capacitance characteristics.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a composition for the production of a gap layer which prevents diffusion of a gap layer and improves DC-bias characteristics and bias-TCL characteristics of the inductor.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a composition for manufacturing a gap layer of an inductor capable of improving the thickness and capacity of an inductor.

An inductor according to the present invention includes a device body and a gap layer provided in the device body and having a metal oxide and a shrinkage control agent.

According to an embodiment of the present invention, the metal oxide may include at least one of zirconium dioxide (ZrO 2), aluminum oxide (Al 2 O 3), and titanium dioxide (TiO 2).

According to an embodiment of the present invention, the shrinkage control agent may include at least one of Bi 2 O 3 (Bi 2 O 3), Bi-Li compound oxide, and Bi-B compound oxide.

According to an embodiment of the present invention, the permeability of the gap layer of the inductor may be 4 or less.

According to an embodiment of the present invention, the metal oxide may be zirconium oxide having an average particle diameter of 0.25 탆 or less.

According to an embodiment of the present invention, the gap layer may have a thickness of 20 mu m or less.

According to an embodiment of the present invention, the gap layer may have a shrinkage ratio of 10.00% or more.

According to an embodiment of the present invention, the shrinkage rate regulator is bismuth trioxide, and the content of bismuth in the gap layer may be less than 1.3 wt%.

According to an embodiment of the present invention, the element body is composed of a plurality of sheets, and each of the sheets may be made of a magnetic material of NiZnCu ferrite series.

The composition for fabricating the gap layer of the inductor according to the present invention includes a metal oxide and a shrinkage control agent.

According to an embodiment of the present invention, the metal oxide is at least one of zirconium dioxide (ZrO 2), aluminum oxide (Al 2 O 3), and titanium dioxide (TiO 2), and the shrinkage rate regulator is Bi 2 O 3, Based oxide, and a Bi-B compound-based oxide.

According to an embodiment of the present invention, the metal oxide is zirconium dioxide (ZrO2), the shrinkage rate regulator is Bi2O3, and the content ratio of the zirconium oxide and the bismuth trioxide is 98.75: 1.25 to 95.00: 5.00 have.

According to an embodiment of the present invention, the shrinkage control agent may be added in an amount of 1.00 mol% or more based on the zirconium oxide.

According to an embodiment of the present invention, the shrinkage control agent may be added in an amount of less than 5.00 mol% based on the zirconium oxide.

According to an embodiment of the present invention, the zirconium oxide may include zirconium dioxide having an average particle diameter of 0.25 탆 or less.

The inductor according to the present invention can improve the DC-bias characteristic and the bias-TCL characteristic by preventing the diffusion of the gap layer in the fabrication process by constituting the gap layer with a mixed material of zirconium oxide and bismuth oxide.

The inductor according to the present invention can be made thinner by reducing the thickness of the gap layer compared with the gap layer using the ZnCuFeO ferrite or Zn-Ti dielectric material as the main component, and the thickness of the device body can be relatively increased, .

The composition for the production of the gap layer of the inductor according to the present invention is composed of zirconium oxide as the main component and bismuth oxide as the shrinkage control agent and prevents diffusion of the gap layer as compared with the gap layer mainly composed of ZnCuFeO ferrite or Zn- The DC-bias characteristic and the bias-TCL characteristic of the inductor can be improved.

The composition for manufacturing the gap layer of the inductor according to the present invention can make the thickness of the gap layer thinner and improve the capacity and the thickness of the inductor compared to the gap layer mainly composed of the ZnCuFeO ferrite or Zn-Ti series dielectric.

1 is a cross-sectional view illustrating an inductor according to an embodiment of the present invention.
FIG. 2 is a graph showing a change rate of inductance according to a direct current application of an inductor having a gap layer formed of an inductor and a Ti-based material according to an embodiment of the present invention.
3 is a graph showing the shrinkage ratio according to the two-component system composition ratio of ZrO2 and Bi2O3.
4 is a graph showing an initial inductance value according to a thickness change of a gap layer of an inductor according to an embodiment of the present invention.
FIG. 5 is a graph showing inductance values according to DC-bias variation according to a thickness change of a gap layer of an inductor according to an embodiment of the present invention.
6 is a graph showing DC-bias (TCL-bias) characteristics according to temperature change of an inductor according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. The present embodiments are provided so that the disclosure of the present invention is complete and that those skilled in the art will fully understand the scope of the present invention. Like reference numerals refer to like elements throughout the specification.

The terms used herein are intended to illustrate the embodiments and are not intended to limit the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is to be understood that the terms 'comprise', and / or 'comprising' as used herein may be used to refer to the presence or absence of one or more other components, steps, operations, and / Or additions.

Hereinafter, an inductor according to an embodiment of the present invention and a composition for fabricating the gap layer will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view illustrating an inductor according to an embodiment of the present invention. Referring to FIG. 1, an inductor 100 according to an embodiment of the present invention may include a device body 110, an electrode structure 120, and a gap layer 130.

The element body 110 may have a multi-layer structure consisting of a plurality of sheets 112. The sheets 112 may be formed by laminating a plurality of non-magnetic ceramic insulating sheets or ferrite magnetic sheets. Each of the sheets 112 may be a sheet made of a ferrite-based magnetic material. More specifically, each of the sheets 112 may be a magnetic sheet made of Ni-Zn-Cu ferrite. The Ni-Zn-Cu ferrite may be ferrite containing Fe 2 O 3, NiO, ZnO, CuO, or the like selectively. Alternatively, cobalt (Co), manganese (Mn), tin (Sn), bismuth (Bi), and various other materials may be further contained as the material of the magnetic sheet.

The electrode structure 120 may have an internal electrode 122 provided inside the device body 110 and an external electrode 124 provided outside the device body 110. The internal electrodes 122 may have a structure in which the circuit patterns formed on the respective sheets 112 form a multilayer coil. The internal electrode 122 may be a silver (Ag) circuit pattern. The external electrode 124 may be for electrically connecting the inductor 100 to an external electronic device (not shown). The external electrodes 124 may be provided at both ends of the element body 110 while being electrically connected to the internal electrodes 122. The external electrode 124 may be formed of a metal layer as an external terminal and a plating layer of nickel (Ni) or tin (Sn) formed by performing a plating process on the metal layer.

The gap layer 130 may be provided between the sheets 112 inside the element body 110. The gap layer 130 may be disposed between the sheets 112 in a direction parallel to the sheets 112 to divide the element body 110 into a plurality of regions. The magnetic field generated in each of the regions is blocked by the gap layer 130 so that the flow of the magnetic field between the regions can be minimized. The gap layer 130 may preferably be implemented with a completely non-magnetic material in terms of the magnetic shielding function as described above.

The cap layer 130 may include an insulating material for high-temperature firing as a main component. The high-temperature firing insulating material may be defined as an insulating material used when the temperature of the firing process for manufacturing the inductor 100 is a high temperature of about 800 ° C or more. As one example, zirconium dioxide (ZrO2) may be used as the insulating material for high-temperature firing. As another example, at least one of aluminum oxide (Al 2 O 3) and titanium dioxide (TiO 2) may be used as the insulating material for high-temperature firing. The zirconium dioxide may preferably have an average particle size of about 0.25 占 퐉 or less, more preferably 0.20 占 퐉. Here, the average particle size may be defined as an average particle size that is confirmed in a sample of a certain size. As an example, the average particle size can be defined as a value of about 50% of the particle cumulative distribution (D50) in a sample analyzed by a particle size analyzer. If the average particle size of the zirconium dioxide exceeds 0.25 mu m, the shrinkage ratio of the gap layer 130 may be reduced.

The gap layer 130 may include remnants of a shrinkage control agent added to the composition for manufacturing the gap layer 130. The efficiency of manufacturing the inductor 110 can be improved by making the gap layer 130 substantially equal to the contraction ratio of the element body 110 generated during the manufacturing process of the device body 110. More specifically, when the shrinkage ratio of the gap layer 130 and the device body 110 are different from each other in the firing process, delamination occurs at the interface between the gap layer 130 and the device body 110 due to the difference in shrinkage ratio. ) Or cracks may occur in the process. Therefore, the shrinkage control agent may be provided to minimize the shrinkage difference as described above. In addition, even when the bonding strength between the gap layer 130 and the element body 110 is low, the above-described defects may occur. Therefore, the shrinkage rate regulator may increase the bonding force between the gap layer 130 and the element body 110 It may be preferable to use a material that can be used.

As one example, diisobutyl tin trioxide (Bi2O3) may be used as the shrinkage ratio regulator. As another example, the shrinkage ratio adjuster may be at least one of a Bi-Li compound oxide and a Bi-B compound oxide. When bismuth trioxide is used as the shrinkage modifier, the bismuth trioxide (Bi2O3) is a material for controlling the shrinkage ratio in the gap layer 130 made of zirconium dioxide, which is the high-temperature firing material, and the shrinkage ratio is about 10.00% Or more of the total amount of the additive.

In addition, the shrinkage control agent may be included in the finished product after firing at about 0.1 wt% or more with respect to the gap layer 130. When the content of the shrinkage control agent is 0.1 wt% or less, a sufficient shrinkage ratio can not be secured during the firing process for manufacturing the gap layer 130, which may reduce the manufacturing process efficiency. When bismuth is used as the shrinkage modifier, a part of the bismuth may be vaporized by heat during the baking process, so that the content may be slightly smaller than that of the composition for producing the first gap layer, The content of the shrinkage control agent in an amount of 0.1 wt% or more may be a value considering that part of the shrinkage control agent is removed in the firing step. The preferred content of the shrinkage control agent in the composition state for the production of the gap layer will be described later.

On the other hand, the thickness T1 of the gap layer 130 can be adjusted to approximately 25 mu m or less. In the case of a gap layer using ZnCu ferrite or a Zn-Ti based dielectric as a main component, a function as a gap layer can be exerted only if a thickness of at least 30 μm is secured. However, since the gap layer 130 is made of a zirconium oxide material, which is a completely non-magnetic material, the gap layer 130 has a thickness T1 of 25 μm or less and more preferably 15 μm or less .

FIG. 2 is a graph showing a change rate of inductance according to a direct current application of an inductor having a gap layer formed of an inductor and a Ti-based material according to an embodiment of the present invention. Referring to FIG. 2, the inductance variation graph 10 of the gap layer 130 according to an embodiment of the present invention shows a graph of the inductance variation value 20 of the gap layer made of a Ti-based non- Lt; RTI ID = 0.0 > temperature. ≪ / RTI > Accordingly, the gap layer 130 of the present invention can be provided with a relatively thin thickness, compared with the gap layer made of a Ti-based nonmagnetic material. That is, in the case of a gap layer made of a general Ti-based nonmagnetic material, it must be provided to have a thickness of at least 30 탆 in order to secure the DC-bias characteristic of the inductor. However, the gap layer 130 according to the embodiment of the present invention can provide DC-bias characteristics of the inductor 100 even if the gap layer 130 is provided with a thickness of less than 25 mu m, and further, less than 20 mu m. When the thickness of the gap layer 130 is reduced, the thickness of the device body 110 may be increased to increase the number of layers of the internal electrode 122, so that the capacity of the inductor 100 may be increased. .

3 is a graph showing the shrinkage ratio according to the two-component system composition ratio of ZrO2 and Bi2O3. Referring to FIG. 3, when a composition for producing the cap layer 130 according to an embodiment of the present invention, the content ratio of ZrO 2: Bi 2 O 3 is 98.75: 1.25 when Bi 3 O 3 is used as a shrinkage modifier As a result, it was confirmed that when the content of the shrinkage control agent is higher than the reference value, the shrinkage ratio (%) is improved. Therefore, it was confirmed that when the content of the shrinkage-regulating agent relative to ZrO2 was about 1.00 mol% or more, the shrinkage percentage (%) was improved. When the content of the shrinkage control agent is less than 1.00 mol% based on the composition, it can be expected that a sufficient shrinkage ratio can not be ensured during the firing process for manufacturing the gap layer 130.

4 is a graph showing an initial inductance value according to a thickness change of a gap layer of an inductor according to an embodiment of the present invention. Referring to FIG. 4, inductors having thicknesses of 5 μm, 7 μm, and 10 μm, respectively, are fabricated and the inductance graphs 11, 13, and 15 of the inductors are calculated , And this was compared with the inductance graph (22) when a gap layer with a thickness of 20 μm was fabricated using Zn ferrite. As a result, it was confirmed that the gap layer 130 had a similar initial inductance value compared to a case where a gap layer having a thickness of 20 μm was formed using Zn ferrite with a thickness of only 10 μm. Accordingly, the gap layer 130 of the inductor 100 according to the embodiment of the present invention may have a thin thickness while exhibiting similar performance as a general gap layer.

FIG. 5 is a graph showing inductance values according to DC-bias variation according to a thickness change of a gap layer of an inductor according to an embodiment of the present invention. 5, inductors having thicknesses of 5 μm, 7 μm, and 10 μm, respectively, are manufactured and the inductance change rate graphs 12, 14, and 16 of the inductors are calculated After that, we compared the inductance change rate graph (24) with the case of fabricating the gap layer with 20 μm thickness using Zn ferrite. As a result, it was confirmed that the Isat value, which is the current value at which the DC-bias change rate is -30%, is similar to the value when the gap layer 130 is used at 5 μm. Thus, the gap layer 130 of the inductor 100 according to an embodiment of the present invention exhibits similar performance compared to a conventional gap layer, but with initial inductance characteristics equal to or greater than about 50% Isat value can be indicated.

6 is a graph showing DC-bias (TCL-bias) characteristics according to temperature change of an inductor according to an embodiment of the present invention. Referring to FIG. 6, it is confirmed that the gap layer 130 of the inductor 100 according to the embodiment of the present invention has little change with temperature change.

As described above, the inductor 100 according to the embodiment of the present invention has a structure in which the gap layer 130 provided in the element body 110 to block the magnetic field is composed of zirconium oxide, which is a high-temperature firing material, and bismuth oxide, Lt; / RTI > In this case, there is almost no diffusion between the element body and the gap layer during the firing process, and since the zirconium oxide is a completely non-magnetic material, it is better to use the ZnCuFeO ferrite or the Zn- The magnetic field shielding efficiency can be exerted. Accordingly, the inductor according to the present invention can improve the DC-bias characteristic and the bias-TCL characteristic by preventing the diffusion of the gap layer in the fabrication process by constituting the gap layer with a mixed material of zirconium oxide and bismuth oxide. In addition, the inductor according to the present invention can be made thinner by thinning the thickness of the gap layer compared to the gap layer using ZnCuFeO ferrite or Zn-Ti based dielectrics as a main component, thereby increasing the thickness of the device body relatively. The capacity can be increased.

[ Example ]

A zirconium oxide (ZrO2) powder having an average particle diameter of 100 nm or less and bismuth oxide (Bi2O3) were added in such a ratio as shown in the following Table 1 to the total mixture content to prepare a mixture. Here, in addition to the zirconium oxide (ZrO2) powder and bismuth oxide (Bi2O3), a small amount of element body components such as zinc (Zn) and copper (Cu) or a liquid phase sintering additive can be selectively added, And the sum of the contents of zirconium oxide powder and bismuth oxide was 100 mol%.

 The mixture was prepared in the form of a slurry, and the slurry was dried at a temperature of approximately 120 DEG C for at least 12 hours and pulverized to obtain a powder. 2.5 g of a PVA binder (5% diluent) was added to a toroidal core mold having an outer diameter of 20 mm and an inner diameter of 14 mm by adding about 10 wt% of the powder to the powder, and the mixture was compressed at a pressure of 2 tons for about 1 minute After molding, the mixture was calcined at a calcination temperature of approximately 900 DEG C for approximately 2 hours.

The shrinkage ratio was calculated by measuring the size of the produced toroidal core, and the enamel copper wire was wound 10 turns, and then the inductance L value at 1 MHz was measured to calculate the permeability, Respectively.

The composition of the gap layer produced using the sample 2 and the sample 7 was quantitatively analyzed and summarized in Table 2.

Firing temperature Sample Composition (mol%) Investment ratio Shrinkage (%) ZrO2 Bi2O3 900 ℃ Sample 1 99.37 0.63 3.20 0.85 900 ℃ Sample 2 98.75 1.25 3.39 2.50 900 ℃ Sample 3 98.00 2.00 3.23 10.00 900 ℃ Sample 4 97.50 2.50 3.21 16.25 900 ℃ Sample 5 97.00 3.00 3.20 16.75 900 ℃ Sample 6 96.00 4.00 3.21 18.60 900 ℃ Sample 7 95.00 5.00 3.12 18.40

Bi2O3 content (mol%) in composition for producing gap layer Content (wt%) of constituent elements in the gap layer after firing Bi Zr Cu Fe Zn Ni Total 1.25 0.1 95.0 0.8 2.9 0.3 0.9 100 5 1.3 93.1 0.8 3.4 0.4 1.0 100

Referring to Table 1, it was confirmed that the magnetic permeability of all of the samples 1 to 7 was less than 4 and that the nonmagnetic material was present. Thus, it was confirmed that all of the samples 1 to 7 were sufficiently usable as the material of the gap layer.

Referring to Table 2, it was confirmed that the contents of Bi in the gap layer produced using the sample 2 and the sample 7 were 0.1 wt% and 1.3 wt%, respectively. Accordingly, when the concentration of Bi2O3 in the composition for the production of the gap layer is controlled to approximately 1.25 mol% to 5.00 mol%, it is confirmed that approximately 0.1 wt% to 1.3 wt% is contained in the gap layer. However, as shown in FIG. 2, even if the content of Bi2O3 as the shrinkage control agent is increased to about 1.00 mol% or more, the effect of improving the shrinkage ratio can be exhibited. Also, according to the production process conditions of the inductor, The Bi content is greatly reduced. Considering the minimum amount of Bi2O3 and the manufacturing process conditions of the inductor, it is expected that the minimum Bi content of the gap layer can be lowered to 0.01 wt%.

On the other hand, when the content of Bi2O3 to ZrO2 was 1.25 mol% or less, the shrinkage ratio was 2.50% or less. That is, in the case of Sample 1 and Sample 2, the content of Bi2O3 as a shrinkage-regulating agent was relatively small, and it was confirmed that the function of increasing the shrinkage ratio could not be sufficiently exhibited. However, when the content of Bi2O3 relative to ZrO2 was 2.00 mol% or more, the shrinkage ratio was 10.00% or more. In other words, it was confirmed that the shrinkage ratio increased from 10% or more in the case of Sample 1 to Sample 7, and particularly, as shown in FIG. 3, the shrinkage rate increased sharply from the time when the amount of Bi2O3 added became 1.25 mol% . However, when the content of Bi2O3 is more than 4 mol% or more than 5 mol%, it is confirmed that the shrinkage ratio is not further increased to about 18.50%. That is, in terms of the shrinkage percentage, the content of Bi2O3 had a saturation value at about 4 mol% to 5 mol% or more.

Through the above-described result data, the composition for producing the gap layer of the inductor according to the embodiment of the present invention comprises zirconium oxide, which is a completely insulating material as a high-temperature firing material, and the content of Bi2O3 as a shrinkage- , It is confirmed that the function can be sufficiently secured by the gap layer of the inductor. Particularly, considering that the sintering shrinkage ratio of the gap layer using ZnCuFeO ferrite or Zn-Ti series dielectric as a main component is approximately 10% to 20%, the content ratio of zirconium oxide and Bi2O3 is set to 98.75: 1:25 to 95.00: 5.00 , It is confirmed that the effect is similar or better than that of the conventional gap layer material.

The foregoing detailed description is illustrative of the present invention. It is also to be understood that the foregoing is illustrative and explanatory of preferred embodiments of the invention only, and that the invention may be used in various other combinations, modifications and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, the disclosure and the equivalents of the disclosure and / or the scope of the art or knowledge of the present invention. The foregoing embodiments are intended to illustrate the best mode contemplated for carrying out the invention and are not intended to limit the scope of the present invention to other modes of operation known in the art for utilizing other inventions such as the present invention, Various changes are possible. Accordingly, the foregoing description of the invention is not intended to limit the invention to the precise embodiments disclosed. It is also to be understood that the appended claims are intended to cover such other embodiments.

100: inductor
110: element body
120: Electrode Structure
122: internal electrode
124: external electrode
130: Gap layer

Claims (15)

A device body; And
And an inductor including a gap layer provided in the element body and having a metal oxide and a shrinkage control agent. The method according to claim 1,
Wherein the metal oxide comprises at least one of zirconium dioxide (ZrO2), aluminum oxide (Al2O3), and titanium dioxide (TiO2). The method according to claim 1,
Wherein the shrinkage rate regulator comprises at least one of bismuth trioxide (Bi2O3), a Bi-Li compound oxide, and a Bi-B compound oxide. The method according to claim 1,
And the permeability of the gap layer of the inductor is 4 or less. The method according to claim 1,
Wherein the metal oxide is zirconium oxide having an average particle diameter of 0.25 占 퐉 or less. The method according to claim 1,
Wherein the gap layer has a thickness of 20 占 퐉 or less. The method according to claim 1,
Wherein the gap layer has a shrinkage ratio of 10.00% or more. The method according to claim 1,
Wherein the shrinkage control agent is di-bismuth trioxide,
Wherein the content of bismuth in the gap layer is less than 1.3 wt%. The method according to claim 1,
Wherein the element body comprises a plurality of sheets,
Each of the sheets being made of a magnetic material of the NiZnCu ferrite series. A composition for the production of a gap layer in an element body of an inductor,
A composition for the production of a gap layer of an inductor comprising a metal oxide and a shrinkage control agent. 11. The method of claim 10,
Wherein the metal oxide is at least one of zirconium dioxide (ZrO2), aluminum oxide (Al2O3), and titanium dioxide (TiO2)
Wherein the shrinkage rate regulator is at least one of Bi 2 O 3, Bi-Li compound oxide, and Bi-B compound oxide. 11. The method of claim 10,
The metal oxide is zirconium dioxide (ZrO 2)
The shrinkage control agent is di-bismuth trioxide (Bi2O3)
Wherein the content ratio of zirconium oxide to bismuth trioxide is 98.75: 1.25 to 95.00: 5.00. 11. The method of claim 10,
Wherein the shrinkage control agent is added in an amount of 1.00 mol% or more based on the zirconium oxide. 11. The method of claim 10,
Wherein the shrinkage control agent is added to the zirconium oxide in an amount of less than 5.00 mol%. 11. The method of claim 10,
Wherein the zirconium oxide comprises zirconium dioxide having an average particle size of 0.25 占 퐉 or less.

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