KR20140075092A - donor film for transfer, manufacturing method thereof, and transfer method using the same - Google Patents

Abstract

A donor film for transfer of the present invention includes: a base film; a plurality of transfer electrodes which are extended in a first direction and are separately formed with an interval in a second direction on the base film; a heat expansion layer formed on the transfer electrode to cover the transfer electrode; and an organic material layer formed on the heat expansion layer.

Description

[0001] The present invention relates to a donor film for transferring, a manufacturing method thereof, and a transfer method using the donor film,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescence display, and more particularly, to a transfer donor film for forming an organic layer for an organic electroluminescence display, a method of manufacturing the same, and a transfer method using the same.

2. Description of the Related Art Flat panel displays having excellent characteristics such as thinning, lightening, and low power consumption have been widely developed and applied to various fields.

An organic electroluminescent display device or an organic electroluminescent display device, also referred to as an organic light emitting diode (OLED), has a structure in which charges are injected into a light emitting layer formed between a cathode serving as an electron injecting electrode and a cathode serving as a hole injecting electrode Is injected to form a pair of electrons and holes, and the light is emitted while disappearing. Such an organic electroluminescent display device can be formed not only on a flexible substrate such as a plastic but also has excellent color sensitivity due to self-luminescence and is superior to a plasma display panel or inorganic electroluminescent display It has the advantage that it can be driven at low voltage (10V or less) and has relatively low power consumption.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing a structure of a general organic electroluminescent display device in a band diagram. FIG.

1, an organic electroluminescent display device includes an emitting layer 14 between an anode electrode 11, which is an anode, and a cathode electrode 17, which is a cathode. Between the anode electrode 11 and the light emitting layer 14 and between the cathode electrode 17 and the light emitting layer 14 in order to inject holes from the anode electrode 11 and electrons from the cathode electrode 17 into the light emitting layer 14. [ A hole transporting layer 13 and an electron transporting layer 15 are respectively disposed. In order to inject holes and electrons more efficiently, a hole injecting layer 12 is formed between the anode electrode 11 and the hole transporting layer 13, a hole injecting layer 12 is formed between the electron transporting layer 15 and the cathode electrode 17, Further includes an electron injecting layer 16.

1, the lower line is the highest energy level of the valence band, the highest occupied molecular orbital (HOMO), the upper line is the lowest energy level of the conduction band, LUMO (lowest unoccupied molecular orbital). The energy difference between the HOMO level and the LUMO level is the band gap.

In the organic electroluminescent display device having such a structure, holes (+) injected from the anode electrode 11 into the light emitting layer 14 through the hole injecting layer 12 and the hole transporting layer 13 and electrons injected from the cathode electrode 17 Electrons injected into the light emitting layer 14 through the electron injection layer 16 and the electron transport layer 15 are recombined to form an exciton 18, Light of a color corresponding to the band gap of the light emitting layer 14 is emitted.

The organic electroluminescent display device includes a plurality of pixels for displaying an image, and each pixel includes red, green, and blue sub-pixels, and a thin film transistor and a light emitting diode are formed in a thin film form for each sub-pixel.

Red, green, and blue subpixels are patterned with red, green, and blue emission layers corresponding to the respective subpixels. Generally, the emission layer is formed by a vacuum deposition method using a shadow mask. However, the vacuum deposition method has a disadvantage in that it is difficult to finely pattern the light emitting layer and thus it is difficult to apply the light emitting layer to a high resolution.

In order to solve this problem, a method of patterning the light emitting layer through laser induced thermal imaging (LITI) has been proposed.

2A and 2B are views illustrating a process of forming a light emitting layer by a conventional laser induced thermal imaging method.

2A, a plurality of patterns 22 defining a pixel region are formed on a substrate 20, and a donor film 30 is disposed thereon.

The donor film 30 includes a base film 32, a light-to-heat conversion layer (LTHC layer) 34, an interlayer 36 and an organic layer 38 .

Here, the donor film 30 is arranged so that the organic layer 38 faces the substrate 20. [

Next, a laser beam is irradiated to a portion corresponding to the pixel region. 2B, the volume of the light-to-heat conversion layer 34 and the interlayer film 36 that have received the laser beam are expanded, and the organic layer 38 of the bulged portion is expanded in the substrate 20, So that the light emitting layer 24 patterned for each pixel region is formed.

However, when the organic layer is transferred by irradiating the laser beam, the process time (tact time) for scanning each pixel region is long and the size of the laser beam is limited, The problem arises due to the overlapping portion due to the occurrence of the mura problem.

In order to minimize the energy loss, a laser beam having a larger energy output than the energy required for actual transfer is required. In order to minimize energy loss, It is necessary to develop a light-to-heat conversion layer material having a high thermal conversion efficiency.

In order to solve the problems described above, it is an object of the present invention to provide a transfer donor film which can simplify a process, reduce a time and cost, a manufacturing method thereof, and a transfer method using the donor film.

It is another object of the present invention to provide a transfer donor film for forming a thin film which can be applied to a high resolution and a large area, a manufacturing method thereof, and a transfer method using the same.

In order to accomplish the above object, the present invention provides a base film comprising: a base film; A plurality of transfer electrodes extending along the first direction on the base film and spaced apart from each other along the second direction; A thermal expansion layer formed on the transfer electrode and covering the transfer electrode; And an organic layer formed on the thermal expansion layer.

The base film is made of polyethylene terephthalate (PET), polyimide, or polyamide.

The transfer electrode is made of molybdenum.

Both ends of the transfer electrode are connected to each other.

The width of the transfer electrode corresponds to one pixel region of the organic electroluminescence display device, and the distance between the transfer electrodes corresponds to two pixel regions of the organic electroluminescence display device.

The transfer donor film of the present invention further includes a heat fault layer between the base film and the transfer electrode.

Further, the present invention provides a method of manufacturing a transfer donor film, comprising: disposing a transfer donor film on an image receiving substrate; Supplying power to the transfer electrode to generate heat; And expanding the thermal expansion layer by the heat to transfer the organic material layer onto the substrate to be transferred.

In the step of generating the heat, the transfer electrode reaches 150 to 250 degrees Celsius.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a plurality of transfer electrodes extending along a first direction on a base film and spaced apart from each other along a second direction; Forming a thermal expansion layer covering the transfer electrode on the transfer electrode; And forming an organic layer on the thermal expansion layer.

The method for manufacturing a transfer donor film of the present invention may further comprise forming the base film on a glass substrate prior to forming the plurality of transfer electrodes, And removing from the base film.

In the present invention, a transfer donor film including a plurality of transfer electrodes is formed, power is supplied to the transfer electrodes, heat is generated, and the organic layers are transferred. As a result, equipment and processes can be simplified and time saved, resulting in cost savings.

In addition, the transfer donor film of the present invention can reduce the width of the transfer electrode and can be manufactured in a large size, so that it can be applied to a high resolution and a large area.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing a structure of a general organic electroluminescent display device in a band diagram. FIG.
2A and 2B are views illustrating a process of forming a light emitting layer by a conventional laser induced thermal imaging method.
3 is a cross-sectional view illustrating an array substrate for an organic electroluminescence display device according to an embodiment of the present invention.
4 is a cross-sectional view schematically showing a transfer donor film according to an embodiment of the present invention.
5 is a plan view schematically showing a transfer donor film according to an embodiment of the present invention.
6A to 6C are schematic process sectional views illustrating a transfer method using a transferred donor film according to an embodiment of the present invention.
7 is a plan view schematically showing the arrangement of transfer donor films and an image receiving substrate according to an embodiment of the present invention.
8A to 8C are schematic process sectional views showing a method of manufacturing a transfer donor film according to an embodiment of the present invention.
9A to 9D are schematic process sectional views showing a method of manufacturing a transfer donor film according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a cross-sectional view illustrating an array substrate for an organic electroluminescence display device according to an embodiment of the present invention.

A thin film transistor Tr composed of a semiconductor layer 122, a gate electrode 132, and source and drain electrodes 142 and 144 is formed on an insulating substrate 110 in each pixel region, Respectively. A gate insulating layer 130 is located between the semiconductor layer 122 and the gate electrode 132 and an interlayer insulating layer 140 is located between the gate electrode 132 and the source and drain electrodes 142 and 144.

A passivation layer 150 is formed on the top of the thin film transistor Tr to cover the thin film transistor Tr and the passivation layer 150 has a contact hole 150a for exposing the drain electrode 144. [ The protective layer 150 may be formed of an organic insulating material and have a flat surface. On the other hand, an insulating layer made of an inorganic insulating material may be further included between the thin film transistor Tr and the protective film 150.

A first electrode 162 is formed on the passivation layer 150 to correspond to each pixel region and the first electrode 162 contacts the drain electrode 144 through the drain contact hole 150a. Here, the first electrode 162 becomes a pixel electrode.

A bank layer 172 is formed on the first electrode 162. The bank layer 172 is located between adjacent pixel regions and covers the edge of the first electrode 162, exposing the first electrode 162 in the pixel region.

First to third light emitting layers 182a, 182b and 18bc are formed on the bank layer 172 to contact the exposed first electrodes 162. The first to third light emitting layers 182a, 182b and 18bc Are formed corresponding to one pixel region. The first to third light emitting layers 182a, 182b, and 182c emit red, green, and blue light, respectively.

A second electrode 184 is formed on the first to third light emitting layers 182a, 182b, and 182c to correspond to the entire surface of the substrate 110. [

Here, the first electrode 162, the light emitting layers 182a, 182b, 182c, and the second electrode 184 form a light emitting diode, the first electrode 162 serves as an anode electrode of the light emitting diode, The electrode 184 may serve as a cathode electrode of the light emitting diode.

Although not shown, an electron transport layer and an electron injection layer may be sequentially formed between the first to third emission layers 182a, 182b, and 182c and the second electrode 184 to efficiently inject electrons. A hole injecting layer and a hole transporting layer may be sequentially formed between the first electrode 162 and the first to third light emitting layers 182a, 182b, and 182c.

In the present invention, the first to third light emitting layers 182a, 182b, and 182c are patterned corresponding to one pixel region. However, the first light emitting layer may be formed on the entire surface of the substrate, And the second and third pixel regions may be formed to further include the second and third light emitting layers, respectively.

These light emitting layers 182a, 182b, and 182c are formed by a transfer method using the transfer donor film according to the embodiment of the present invention.

FIG. 4 is a cross-sectional view schematically showing a transfer donor film according to an embodiment of the present invention, and FIG. 5 is a plan view schematically showing a transfer donor film according to an embodiment of the present invention.

4 and 5, the transfer donor film 200 of the present invention includes a base film 210, a thermal barrier layer 220, a transfer electrode 232, a thermal expansion layer 240, and an organic layer 250, .

The base film 210 is preferably made of a material having high heat resistance, and may be made of, for example, polyethylene terephthalate (PET), polyimide, or polyamide.

A thermal barrier layer 220 is formed on the base film 210 and a plurality of transfer electrodes 232 are formed on the thermal barrier layer 220. Here, the heat fault layer 220 may be omitted. The transfer electrode 232 is made of a metal material, and may be formed of molybdenum, for example. The transfer electrodes 232 can be electrically connected to each other at both ends thereof.

A thermal expansion layer 240 covering the transfer electrode 232 is formed on the transfer electrode 232. The thermal expansion layer 240 may be made of, for example, an acrylic resin or an epoxy resin.

An organic layer 250 is formed on the thermal expansion layer 240. The organic layer 250 includes a light emitting material as a layer to be transferred.

An interlayer for protecting the organic layer 250 may be further formed between the thermal expansion layer 240 and the organic layer 250. The interlayer film may be a silicon nitride film (SiN x) or a silicon oxide film (SiO ₂ ).

The transfer method using the transferred donor film of the present invention will be described with reference to FIGS. 6A to 6C and FIG.

FIGS. 6A to 6C are cross-sectional views schematically illustrating a transfer method using a transfer donor film according to an embodiment of the present invention. FIG. 7 is a cross-sectional view of a transfer donor film according to an embodiment of the present invention, And is a schematic plan view. Here, the image receiving substrate corresponds to the array substrate of the organic electroluminescence display device of Fig. 3, and the other components are omitted.

As shown in Figs. 6A and 7, the transfer donor film 200 is disposed on the image receiving substrate 100. Fig.

The transfer source substrate 100 includes a pixel electrode 162 corresponding to a pixel region on the insulating substrate 110 and a bank layer 172 above the pixel electrode 162. [ The bank layer 172 covers the edge of the pixel electrode 162 and exposes the pixel electrode 162 in the pixel region.

The donor film 200 includes a base film 210 and a heat shield layer 220 sequentially formed at a lower portion thereof. A transfer electrode 232, a thermal expansion layer 240, and an organic layer 250 are formed. The plurality of transfer electrodes 232 extend along the first direction and are spaced apart from each other along the second direction, and both ends thereof can be connected to each other.

At this time, the donor film 200 is arranged so that the transfer electrodes 232 correspond to the pixel electrodes 162 between the adjacent bank layers 172.

Here, the length of the transfer electrode 232 is preferably larger than the length of the transfer substrate 100 in the first direction, and the width of the transfer electrode 232 may be equal to or less than the distance between the adjacent bank layers 172 . On the other hand, the interval between the transfer electrodes 232 corresponds to two pixel regions.

Next, as shown in Figs. 6B and 7, power is supplied to both ends of the transfer electrode 232. Fig. At this time, it is preferable to apply a constant current for a predetermined time so that the transfer electrode 232 reaches a temperature of about 150 to 250 degrees Celsius. For example, a current of about 750 V is allowed to flow for about 50 ms.

The thermal expansion layer 240 under the transfer electrode 232 is expanded by the heat generated in the transfer electrode 232 and the organic layer 250 under the expanded thermal expansion layer 240 is transferred onto the pixel electrode 162 .

6C, the transfer donor film 200 is removed, and the donor film 200 is removed from the substrate 100 to form a light emitting layer 182 having the pixel electrode 162 patterned thereon. Here, the light emitting layer 182 may be partially formed on the bank layer 172 as well.

This process can be repeated to form red, green and blue light emitting layers, respectively.

As described above, in the present invention, the donor film 200 including the transfer electrode 232 is used to form a light emitting layer, so that the equipment and the process are simplified and can be applied to a high resolution and a large area.

Hereinafter, a method for producing a transfer donor film of the present invention will be described with reference to the drawings.

8A to 8C are schematic process sectional views showing a method of manufacturing a transfer donor film according to an embodiment of the present invention.

As shown in FIG. 8A, a heat fault layer 320 is formed on the entire upper surface of the base film 310. Next, a metal material is deposited on the heat fault layer 320 by sputtering or the like, and patterned to form a transfer electrode 332 spaced at a previous interval. Here, the base film 310 may be made of polyethylene terephthalate (PET), and the transfer electrode 332 may be made of molybdenum. On the other hand, the heat fault layer 320 may be omitted.

Although the width and interval of the transfer electrode 332 are similar in the drawing, the width of the actual transfer electrode 332 corresponds to one pixel region, and the interval corresponds to two pixel regions. Although not shown, both ends of the transfer electrode 332 are electrically connected.

Next, as shown in Fig. 8B, a thermal expansion layer 240 is formed on the transfer electrode 332 so that the thermal expansion layer 240 expands due to corruption upon heating.

Next, as shown in FIG. 8C, an organic material layer 350 is formed on the entire surface of the thermal expansion layer 340 by vacuum deposition, spin coating, or slit coating.

Thus, the transferred donor film is completed.

9A to 9D are schematic process sectional views showing a method of manufacturing a transfer donor film according to another embodiment of the present invention.

9A, a base film 412 is formed by coating polyimide or polyamide on the glass substrate 410 in a flat manner.

Next, a thermal insulation layer 420 is formed on the entire upper surface of the base film 412, a metal material is deposited on the thermal insulation layer 420 by sputtering and patterned to form a transfer electrode 432 spaced from the first insulation layer 420, . Here, the transfer electrode 432 may be made of molybdenum, and the heat fault layer 420 may be omitted.

Next, as shown in FIG. 9B, a thermal expansion layer 440 is formed on the transfer electrode 432 to expand the decay upon heating.

9C, an organic material layer 450 is formed on the entire surface of the thermal expansion layer 440 by vacuum deposition, spin coating, or slit coating.

Next, as shown in Fig. 9D, the glass substrate (410 in Fig. 9C) is separated from the base film 412 to remove the glass substrate (410 in Fig. 9C).

Thus, the transferred donor film is completed.

The present invention is not limited to the above-described embodiments, and various changes and modifications may be made without departing from the spirit of the present invention.

200: donor film 210: base film
220: heat fault layer 232: transfer electrode
240: thermal expansion layer 250: organic layer

Claims (10)

A base film;
A plurality of transfer electrodes extending along the first direction on the base film and spaced apart from each other along the second direction;
A thermal expansion layer formed on the transfer electrode and covering the transfer electrode;
The organic layer formed on the thermal expansion layer
≪ / RTI >
The method according to claim 1,
Wherein the base film is made of polyethylene terephthalate (PET), polyimide, or polyamide.
The method according to claim 1,
Wherein the transfer electrode is made of molybdenum.
The method according to claim 1,
Wherein both ends of the transfer electrode are connected to each other.
The method according to claim 1,
Wherein a width of the transfer electrode corresponds to one pixel region of the organic electroluminescence display device and an interval between the transfer electrodes corresponds to two pixel regions of the organic electroluminescence display device.
The method according to claim 1,
Further comprising a heat fault layer between the base film and the transfer electrode.
A transfer method using the transferred donor film according to any one of claims 1 to 6,
Disposing the transferred donor film on an image receiving substrate;
Supplying power to the transfer electrode to generate heat;
Exposing the thermal expansion layer by the heat to transfer the organic layer onto the substrate to be transferred
/ RTI >
8. The method of claim 7,
Wherein the transfer electrode reaches 150 DEG C to 250 DEG C in the heat generating step.
Forming a plurality of transfer electrodes extending along the first direction on the base film and spaced apart from each other along the second direction;
Forming a thermal expansion layer covering the transfer electrode on the transfer electrode;
Forming an organic layer on the thermal expansion layer
≪ / RTI >
10. The method of claim 9,
Further comprising forming the base film on a glass substrate prior to forming the plurality of transfer electrodes, and removing the glass substrate from the base film after forming the organic layer ≪ / RTI > wherein the donor film is a film.

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