KR20140066646A - Transfer mask for the structured evaporation and evaporation method using thereof - Google Patents

Abstract

The present invention relates to a transfer mask (1) for structured deposition of substrates (20) which has a transparent intermediate carrier (2); a method for producing the transfer mask; a deposition method; and a deposition apparatus which can be used in deposition using the transfer mask (1). A layer stack (13) is arranged on a back surface (14) of the intermediate carrier, and the layer stack has an absorption layer (6), and an evaporation layer (12) of materials to be continuously evaporated thereon. The layer stack (13) of the transfer mask (1) also has multiple spacers (7) so as to set a gap of the evaporation layer (12) with respect to the substrates (20) in non-evaporation areas. The spacers (7) are formed in the absorption layer, a spacer layer (11), or an intermediate layer (8) in the layer stack (13) so as to prevent a layer error in the deposited layer while providing transfer masks with a variable material and structure, particularly transfer masks for organic materials.

Description

TECHNICAL FIELD [0001] The present invention relates to a transfer mask for structured deposition, and a deposition method using the same. ≪ Desc / Clms Page number 1 >

The present invention generally relates to a method of depositing a material to be deposited from a transfer mask onto a substrate using deposition, by first regenerating the structures of the layer to be produced on a transfer mask, locally evaporating the light through the transfer mask, Lt; RTI ID = 0.0 > coating < / RTI > substrates. The present invention is particularly concerned with a transfer mask that can be used in such a manner.

The use of masks is known in various subtractive and additive ways. In the case of subtraction, for example, in photolithography, the layer deposited on the entire surface of the substrate is later structured in a variety of ways using masks, while the transfer masks are applied in an additive manner, i. E. Structures. Due to the layer thickness in the range of approximately 100 nm to be deposited by such methods, the pulsed energy input is sufficient for evaporation in many cases. Deposition using transfer masks is also possible in the context of continuous working methods.

DE 10 2009 041 324 A1 discloses an addition method for locally depositing a substrate using a transfer mask. In this method, a transparent intermediate carrier is used to locally vaporize the coating material from the intermediate carrier to the substrate. For deposition, the coating material is deposited on the entire surface of the transfer mask, but the coating material is subsequently evaporated only at desired locations. To this end, the intermediate carrier of the transfer mask has reflective and absorptive regions of essential structure. If the transfer mask is positioned on a substrate or on a substrate (such as in the case of multiple materials and especially organic materials), then only in areas where the coating material sufficiently receives energy for evaporation as a result of the reflective and absorptive structure of the transfer mask, Energy input by radiation and subsequent evaporation is achieved.

As an alternative to transfer masks having structured reflective layers and / or absorbing layers, it is also known to perform local subdivision of the energy input into the absorber using shadow masks, in the case of the shadow masks The absorbent layer is sufficiently heated only in such non-shaded areas to evaporate the material of the evaporation layer in the unshaded areas.

In order to achieve the highest possible resolution, the distance between the transfer mask and the substrate will ideally be very small. Preferably, a contact is made between the two objects. However, in the contact mode, unintended effects, such as textures, may occur in layer form. In order to set these very small intervals while avoiding these textures, a reflective layer having a thickness corresponding to the spacing is formed in US 2009/0169809 A1 and the reflective layer is formed by arranging spacer elements arranged in non-evaporation areas in a structured form do. However, the cost of the reflective layer, which is usually made of noble metal, is increased, thereby limiting the structure of the transfer mask and the variability to the material used.

It is therefore an object of the present invention to provide a structured deposition using a transfer mask so that the structure usable in the transfer mask and the usable materials, in particular the organic materials usable for evaporation, are more variable while avoiding known layer errors in the deposited layer And to design a transfer mask that can be used for such deposition.

To achieve the above object, there is proposed a transfer mask according to claim 1, a method for manufacturing the transfer mask according to claim 7, a deposition method according to claim 9, and a deposition apparatus usable for the deposition according to claim 12. Each subordinate clause related to this describes the preferred formations claimed by the subject of the independent claim.

With the proposed transfer mask, the distance between the substrate and the substrate (target object-substrate-spacing) between the evaporation layer (more precisely, the evaporation areas of the evaporation layer, referred to below as evaporation areas, Is set to match the exact transfer value of the evaporation material that can be reproduced between the substrates. It has been found that the setting of the spacing between the substrate and the surface of the evaporation layer (referred to herein as the target object-substrate-spacing) and the associated free volume formation between the surfaces of the two objects for mass transfer, Thereby reducing the adverse effects due to growth.

According to the present invention, spacers are integrated in the mask structure to carefully set and precisely set the target object-substrate-spacing. The spacers are alternatively (in the cross-sectional view of the transfer mask) embodied according to the invention either by means of an absorber layer or in the absorber layer, by a special spacer layer or by means of a special spacer layer, by an intermediate layer, The height distance of the spacers is reflected in the evaporation layer due to the deposition of at least on the horizontal layer surfaces, as in the interlayers added in this case, to a uniform thickness of the layers lying above the layer surfaces, especially the evaporation layer.

The height distances formed by the spacers are such that in the mask structure according to the present invention there is a distance between the evaporation layer surface and the substrate surface to be coated to be set in the non-evaporation regions and the corresponding non- It is reproduced around by the laying layers. The interval to be set between the surface of the evaporation layer and the surface of the substrate to be coated is also referred to hereinafter as the target object-substrate-interval. Layers overlying the spacers to continue the basic height profile of these spacers up to the layers overlying the spacers can be deposited conformally, i.e., uniform thickness independent of the surface tilt. Alternatively, layer thickness variations may occur in individual surface portions. The surfaces of the layers that run parallel to the surface of the intermediate carrier, regardless of the mask position, are understandable horizontally.

The spacers are arranged in the regions of the transfer mask as viewed in the transverse direction, and no deposition of the substrate should occur from these regions of the transfer mask. These regions are referred to below as non-evaporation regions and are defined by the structures of the absorber and / or reflective layer in accordance with the locally subdivided energy input or alternatively by the structure of the shadow mask for radiation of the transfer mask.

The arrangement of spacers according to the invention in the non-evaporated regions of the transfer mask with the use of various layers is advantageous because the deposition is not affected by the spacers and the variability in the shape, . Also, materials, layer thicknesses and structure sizes that can be used in the reflective layer in accordance with the cost and method aspects can be optimized without restriction. Alternatively, transfer masks which do not have a reflective layer or have a reflective layer embedded are also possible.

According to the present invention, the spacers can be made of the material of the absorbent layer and can be formed in the absorbent layer or by the structuring of the layer itself. At the same time, the spacers can be integrated in a conventional transfer mask, which is likewise minimized in terms of the number of layers, and can be formed with known transfer mask manufacturing methods without additional method steps. Spacers may alternatively be made of other materials and may be fabricated in the spacer layer or in the interlayer within the layer stack, if necessary or important due to the height of the spacers, the materials, the conductivity of those materials, the deposition characteristics. The above two methods for producing a spacer can be carried out without affecting the absorption characteristics of the mask.

The intermediate layer within the layer stack has various functions that regularly improve the coating conformability of the transfer mask, such as, for example, thermal separation between the reflective layer and the absorbent layer, or improvement of the adhesion of the reflective layer and the absorbent layer or neighboring layers. In addition to these functions, the target object-substrate-spacing can also be set in the alternative formation example of the present invention.

Separate spacer layers are also possible which provide maximum variability with respect to available materials and layer thicknesses to be produced. Unlike the intermediate layer, the spacer layer has no additional function in addition to the target object-substrate-spacing setting, and can be inserted at all possible positions in the transfer mask layer stack as the lowest layer as well as at the uppermost layer or at all possible intermediate positions. The spacer elements are formed by the structural elements of the structured spacer layer in this example of formation.

The desired target object-substrate-spacing can be made as intended by the height of the spacers in each of the three layers mentioned and / or by the thickness profile of the layers deposited thereon, as the case may be. In all cases, the spacers are disposed in non-evaporation areas.

In the formation example of the transfer mask, the transfer mask includes a structured reflection layer, and spacers are disposed in the structure regions of the reflection layer.

In the above-mentioned formation example of the transfer mask, the spacers may be arranged in a manner spaced apart from the evaporation regions or surrounding the individual evaporation regions. The spacing between the spacers and the evaporation zones permits gas exchange between the evaporation zones which occur within the volume formed between the transfer mask and the substrate during the evaporation process.

In alternative or additional configurations of spacers, when the spacers are arranged such that one spacer surrounds one evaporation zone each, so that when crater-shaped arrays with grooves are created, only the area of the spacers Since the transfer mask is in contact, gas discharge from the cavity formed as described above can be prevented. Such an arrangement may be advantageous for high-digitized structures, for example.

As long as the transfer mask includes a structured reflective layer corresponding to a further formation example, the spacers may likewise be formed by some structural regions or by all structural regions, i.e. also in the structuring of the regions in which the previously deposited reflective layers are maintained .

In the described alternative formations in which the spacers are made of different layers of material, additional layers are added into the transfer mask that can make the deposition more efficient and closer to the desired target. Thus, in a further embodiment of the invention a continuous, i.e. non-stopping, cover layer can be integrated, resulting in improved separation of the evaporation material during the evaporation process and an edge effect can be avoided. The cover layer can also be easily fabricated in one method step without recreating the height distances of the spacers and structuring. As long as the cover layer is not used for the spacers, this point can be equally applied to the intermediate layer.

Due to the aforementioned variable geometry of the spacers, the example of the formation of the transfer masks according to the invention can be applied to all known types of transfer masks, whether transfer masks without reflectors, transfer masks with which the shadow mask is activated, The reflective layer may also be applied to transfer masks embedded in an intermediate carrier.

In the implementation of the deposition method with the target object-substrate spacing defined by the spacers, the substrate contacts the transfer mask, more precisely the substrate is brought into contact with the ridges formed by the spacers of the transfer mask, resulting in at least evaporation A precise target object-substrate-interval can be set in the evaporation areas of the transfer mask.

In addition to the transfer mask according to the present invention, the deposition apparatus used for carrying out the above-mentioned deposition method has fixing apparatuses for fixing the transfer mask and the at least one substrate so that the substrate and the transfer mask are opposed to each other, At least one of the masks may be moved to the respective other member by suitable translation means of the fixture to translationally set the target substrate-to-substrate spacing and, optionally, also the mask-to-substrate spacing.

Due to the maximum target object-substrate-spacings in so-called proximity distances which are required in these deposition methods and which range generally in the range of about 10 μm, for example 30 μm in known methods, Mechanically precise translational motion means are desirable to achieve a precise and intact approach. In order to set the target object-to-substrate interval using the spacers, an approximate position setting for setting the mask-substrate interval may be performed first, in which the transfer mask and the substrate are not yet in contact with each other have. The mask-substrate-spacing is, for example, in the range of 0.5 μm to 500 μm, and may also deviate from the boundaries of such ranges depending on the shape of the transfer mask and the materials to be deposited. In the present invention, such an interval can be set and changed very accurately by the position sensors.

The substrate and the transfer mask are in contact with each other so that the target object-substrate-interval is set while the additional approach using the above-described translational motion means, which follows from this position, is in progress. By having the spacers have a desired height, target object-substrate-spacings in the range of 0.1 mu m to 10 mu m or a wider range can be precisely set using the transfer mask according to the invention with the spacers.

The target structure, the mask structure, and the target object-substrate-space that can be set in the micrometer range can all be applied to the deposition method in which the energy input into the transfer mask is performed by the RTP (Rapid Thermal Processing) process. The transfer mask according to the present invention can uniformly heat the entire thickness of the evaporation layer even when the energy pulse is very short so that a high pressure generated in the thermal boundary range for evaporation in the evaporation layer can be prevented. Particularly the evaporation input of a flash type high RTP process carried out up to the evaporation temperature, which is input only into the lowermost regions of the evaporation layer towards the absorber layer, and thus the fragmentation that can occur in the evaporation layer, Shrinkage transport is prevented by the ability to store heat in the transfer mask.

Typically, so-called RTP methods are methods for inputting energy using light rays, in which a particularly high temperature rise rate or cooling rate can be achieved. High energy lamps, such as halogen lamps or flash lamps, are used to achieve such high rates of temperature rise and cooling. By means of such types of spinning means it is in principle possible to heat up the irradiated and absorbing regions strongly, for example from several hundreds to 1000 degrees Celsius, while at the same time bringing the regions (in many cases layer carriers) It is also possible to heat up to the depth of the meter. Deeper positioned layers or regions of the substrate are maintained at least in this case at least at an outlet temperature due to reaction time and high power density. Typically, the RTP process is carried out with a switching time of a few seconds or less, preferably 100 ms or less, preferably less than 10 ms, more preferably less than 1 ms.

In order to produce a transfer mask according to the present invention, at least one absorber layer, a cover layer and an evaporation layer thereon and optionally a spacer layer (spacers formed from the spacer layer due to the structuring thereof) or a reflective layer or further intermediate layers are included The individual layers of the transfer mask are deposited in a transparent intermediate carrier in suitable ways and are structured after their respective deposition layers to be structured.

Various deposition methods are suitable for deposition of the above-described transfer mask layers. For example, sputtering, vapor deposition, CVD, spin coating or sol-gel process is possible. Both a unified method (e.g., sputtering) for fabricating the entire transfer mask, depending on the layer structure of the transfer mask and the properties of the individual layers required, and combinations of the aforementioned methods are all possible with a continuous working method. In addition, subtractive method steps are also used to fabricate structures or layer systems of individual layers such as dry etching or wet etching using photolithography or mechanical or mechanical-chemical polishing. To achieve the best layer properties and method combinations, such addition and subtraction methods are well known to those skilled in the art.

Furthermore, it may appear desirable that a method sequence for depositing and structuring the transfer mask layers has a pre-processing step and an intermediate processing step likewise employing different techniques. Thus, for example, adhesion of discrete layers can be improved by plasma cleaning or by providing an adhesive layer.

Structuring using localized plasma etching may be advantageous, especially in the case of spacers formed in the reflective layer, but also in the formation of such spacers, for example when precise positioning of the spacers is important, e.g. as in the crater structures described above. Plasma etching results in steep edges with high aspect ratios, and as a result, for example, the sidewall slope of the edges in the reflective layer can be affected. Conversely, if undercutting methods are used, such as wet etching or other structuring methods with less steep edges, or wet chemical etching, where flat edge profiles and strong bottom etching with low aspect ratio occur, Edge profiles are considered.

Hereinafter, the present invention will be described in more detail with reference to embodiments.

1A-1C are cross-sectional views of an alternative embodiment of an intermediate carrier with an absorber layer and spacer elements of a transfer mask according to the invention,
2A and 2B are plan views of an alternative embodiment of an intermediate carrier with an absorption layer and spacer elements of a transfer mask according to the invention,
3 shows an arrangement of a transfer mask according to the present invention facing a substrate having a target object-substrate spacing a _f , and
4 is a diagram showing the arrangement of a transfer mask according to the present invention facing a substrate having a mask-substrate-spacing a _g .

The drawings described below are highly schematic illustrations of respective features that are important to understanding the present invention. In the drawings, all components of an actual product or an actual device are shown or the size or size ratio shown is not shown corresponding to the actual situation.

The embodiments of the transfer mask 1 according to the present invention based on Figs. 1A to 1C show the transfer masks 1 according to the present invention, in which the cover layer (not shown) covering the mask structure for better overview, And the evaporation layer are not shown. All three embodiments have a structured reflective layer 4 on a transparent intermediate carrier 2.

1A shows an example of the formation of a transfer mask in which a planar absorber layer 6 of the transfer mask covering the structured reflective layer 4 is formed on the structural regions of the reflective layer 4, The spacer elements 7 are formed on the substrate.

An absorbing layer 6 is deposited on the structured reflective layer 4 in FIG. 1A to be leveled. The structural regions of the reflective layer 4 shown in the figure are areas where the absorption layer 6 placed thereon is not heated to a temperature required for evaporation because the irradiation of the transfer mask 1 is made through the intermediate carrier 2. According to the invention, the regions forming the non-evaporation regions 9 are used, for example, in the arrangement of the spacer elements 7 made of the spacer layer 11. To this end, the spacer elements 7 have a height corresponding to the target object-to-substrate spacing a _f to be set. The so-called evaporation areas 15 are arranged between the non-evaporation areas 9.

On the structured reflective layer 4 in Fig. 1B, a first absorbent layer 6, which is treated flat, is deposited. In addition, the spacer elements 7 are made of the same absorbing material, for example by a lift-off method, in the structural areas of the reflective layer 4. Therefore, the spacer elements 7 are generated from the absorbing layer 6.

On the structured reflective layer 4 in Fig. 1C, a first absorbent layer 6 is deposited which is treated flat. Further, the spacer elements 7 are made of, for example, a spacer layer 11 and covered with a layer of the same absorbing material. Therefore, the spacer elements 7 are produced in the absorbing layer 6. [

1B and 1C, the evaporation areas 15 and the non-evaporation areas 9 are determined by the structured reflective layer 4, as in the embodiment according to FIG.

The absorbent layer 6 above the structured reflective layer 4, which is followed by layers overlying it, such as a cover layer (not shown in the figure) and an evaporation layer (not shown in the figure) The transfer mask 1 also has a ridge as shown in height a _f in the evaporation layer.

The embodiment of the transfer mask 1 shown in Figs. 2A and 2B shows the position of the evaporation regions 15 relative to the position of the spacer elements 7 in plan view with respect to the mask surface. In these figures as well, the spacer elements 7 are likewise always located in the shadow region of the structured suitable elements lying under the absorbent layer 6, such as a shadow mask or reflective layer beneath the intermediate carrier 2, The height (in the viewing direction) of the spacer elements protrudes from the evaporation regions by the target object-substrate-interval value a _f .

In the formation example according to FIG. 2A, for example, in the regions between the evaporation regions 15 shown in a rectangular shape, a plurality of spacer elements 7 in the spacer layer 11 are disposed. The spacer elements 7 (in the spacer layer 11) shown in FIG. 2B are arranged in a ring shape around the evaporation areas 15.

Figure 3 shows a transfer mask 1 which is in contact with the substrate 20 through the evaporation layer 12 in the region of the spacer elements 7 and in the non-evaporation region 9 therewith, , The target object-substrate-interval a _f exists in the evaporation area 15 of the transfer mask 1 where evaporation is to be performed.

The transfer mask according to FIG. 3 comprises an intermediate carrier 2 as described above in connection with FIG. 1, and a layer stack 13 is deposited on the backside 14 of the intermediate carrier. The rear surface 14 in the present application is provided on the side opposite to the side where the radiation is directed toward the substrate 20 in the deposition method of the substrate 20 and by the light source (not shown in the figure) The surface of the intermediate carrier 2 is referred to. As the material for the intermediate carrier, for example, quartz glass, white glass and sapphire glass are suitable, and these glass materials are not only very strong mechanically and chemically but also have excellent transmission.

A reflective layer 4 is embedded in the intermediate carrier 2. The reflective layer is structured so that only the reflective areas reflect light from the light source and only those areas of the substrate 20 that are not to be vapor deposited. These regions are referred to herein as non-evaporation zones 9 in the present application. The embedding can be carried out in various ways depending on the type of intermediate carrier 2, for example by laminating with a structured reflective layer 4 lying in the middle in the case of plastic materials or by a glass intermediate carrier 2 with a structured reflective layer 4 ) With silicon dioxide.

The layer stack 13 includes a spacer layer 11 deposited by sputter deposition directly over the intermediate carrier 2. [ 1A, the spacer layer 11 is deposited to a thickness corresponding to the target object-to-substrate spacing a _f to form the spacer elements 7. In addition, the spacer layer 11 is structured so that the structural regions of the spacer layer are always located only on the structural regions of the reflective layer 4, i.e. in the shadow regions of the reflective layer in relation to the light incidence have.

As a result of the deposition of the absorber layer 6 on the spacer layer 11, the absorber layer consequently follows and follows the elevations of the height of the spacer layer 11 which reproduce the basic lateral structure of the spacer layer 11 . An intermediate layer 8 can optionally be deposited between the spacer layer 11 and the absorber layer 6 so that the intermediate layer is etched away from the spacer layer 11 in the etched areas of the spacer layer 11, (2).

The mask structure is covered with a cover layer 10 having a thickness of 10 to 200 nm. The cover layer was also sputtered. On the cover layer 10, an evaporated, e.g. organic or metallic, material of the evaporation layer 12 is applied by thermal vacuum deposition. As in the case of the absorbent layer 6, the two layers follow the elevations of the elevated portions of the spacer layer 11, so that the areas of the evaporation layer 12 overlying the spacers 7 have values a _f ).

In Fig. 3, a specific example of the formation of a transfer mask is shown, wherein the absorption layer of the transfer mask is distinguished from Fig. 1A due to the layer thickness being non-isotropic. The embodiment of this absorbent layer 6 exhibits less thickness on the vertical surfaces of the spacer elements 7, i.e. on the edges of the structured intermediate layer 8 compared to the horizontal surfaces. The above-described vapor deposition is performed by, for example, sputtering. The low edge matching enables a reduction or interruption of the heat conduction occurring in the absorbing layer 6, as well as an improved resolution of the structures to be reproduced. This non-equilibrium deposition of the absorbent layer 6 in the illustrated embodiment continues in the layers overlying it. Alternatively, any layer overlying the absorber layer may also have no such layer thickness profile, or only a small number of such layers may have such a layer thickness profile, or the absorber layer may also be conformally reproduced.

Fig. 4 shows an apparatus for carrying out the deposition method with the transfer mask 1 according to the present invention. The transfer mask 1 and the substrate 20 are supported by two fixing devices 24 and 24 'so as to face each other. In order to clarify the deposition method, the transfer mask 1 is shown in Figure 4 without the above-described layer structures, which are schematically and alternatively possible.

The fixation device 24 of the substrate 20, alternatively also the other fixation device or both fixation devices have translational motion means in which the substrate 20 is movable in a micrometer-scale dynamic Can be moved back and forth to the transfer mask 1 in a resolution (shown by a bi-directional arrow in the figure).

The surface of the transfer mask 1 covered with the evaporation layer 12 for structured deposition of the substrate 20 using the transfer mask 1 (structure and spacer elements not shown in the figure for easier overview) Substrate-spacing a _f relative to the substrate 20 as described in connection with Fig. The substrate 20 and the transfer mask 1 are spaced apart from each other by the mask-substrate spacing a _g at the time of positioning. Facing each other. From this position, the gap is reduced until the substrate 20 contacts the transfer mask 1 in the area of the spacer of the transfer mask and the target object-substrate-interval a _f is set.

Subsequently, the evaporation material of the transfer mask 1 is exposed through the transparent intermediate carrier 2 of the transfer mask by a light source 22, i.e., a flash lamp-array. The light source 22 may be switched on or switched off via a shutter 28 similar to the case of optical lithography. The flash lamp-array operates in an exposure mode to heat the evaporation layer 12 for the purpose of evaporation of the evaporation layer 12.

The absorbing layer 6 is heated by the energy input of the light source 22 in accordance with its inherent structure or shadow mask structure (not shown in the figure) or against the structure of the reflective layer 4, The material evaporates only at corresponding locations and is deposited on the surface areas of the substrate 20 facing the heated absorbent layer 6 as a structured coating 26.

After the light source 22 is switched off by the shutter 28, the absorbent layer 6 is quickly cooled by the thermal coupling with the intermediate carrier 2, which has a relatively high heat capacity. By this method, structures smaller than the 10 mu m range can be transferred from the transfer mask 1 to the substrate 20. [

1: transfer mask 2: intermediate carrier
4: reflective layer 6:
7: spacer 8: middle layer
9: non-evaporation zone 10: cover layer
11: spacer layer 12: evaporation layer
13: Layer stack 14: Rear
15: evaporation zone 20: substrate
22: Light source 24, 24 ': Fixing device
26: translational motion means 28: shutter
a _g : mask-substrate-spacing
a _f : target object - substrate-spacing
d _a : thickness of the absorbing layer

Claims (12)

A transfer mask for depositing substrates (20) having a transparent intermediate carrier (2) in a structured manner,
A layer stack (13) is arranged on the rear face (14) of the intermediate carrier, the layer stack comprising at least one absorbent layer (6) consisting of a light absorbing material and on which the vaporization layer (12) Wherein the layer stack (13) of the transfer mask (1) comprises a continuous evaporation layer (12) of material to be vaporized so that it can only be evaporated in the deposition chamber (15) A plurality of spacers 7 of equal height to set the spacing of the evaporation layer 12 relative to the substrate 20 to be deposited in the non-evaporation zones 9 of the evaporation layer 12,
Spacers 7 are formed in the absorber layer 6 or the spacer layer 11 or the intermediate layer 8 made of a light-absorbing material inside the layer stack 13,
Warrior mask. The method according to claim 1,
Wherein the transfer mask 1 comprises a structured reflective layer 4 and the spacers 7 are arranged in the structural areas of the reflective layer 4 forming the non-
Warrior mask. 3. The method of claim 2,
Wherein said spacers (7) are arranged in a manner spaced apart from and / or surrounding individual evaporation zones (15)
Warrior mask. 4. A transfer mask for local deposition according to any one of claims 1 to 3,
Wherein the layer stack (13) has a continuous covering layer (10) over the absorber layer (6) and a continuous evaporation layer (12)
Warrior mask. 5. The method according to any one of claims 1 to 4,
Wherein the layer stack (13) does not comprise a reflective layer (4)
Warrior mask. 5. The method of claim 4,
And a structured reflective layer (4) formed in such a way that the layer stack (13) is embedded in the intermediate carrier (2)
Warrior mask. As a method for manufacturing the transfer mask 1,
Characterized in that the individual layers of the layer stack (13) according to any one of the claims 1 to 6 are deposited on the transparent intermediate carrier (2) one over the other and, if necessary for each layer, Lt; / RTI >
A method for manufacturing a transfer mask. 8. The method of claim 7,
The spacers 7 are formed by local plasma etching or by local wet chemical etching of the previously deposited but not structured absorber layer 6 or spacer layer 11 or intermediate layer 8,
A method for manufacturing a transfer mask. A deposition method for locally distinguishably depositing a transfer mask (1) and a substrate (20)
The transfer mask comprises at least one absorbent layer 6 on a transparent intermediate carrier 2 and a continuous evaporation layer 12 of material to be vaporized thereon such that the vaporization layer 12 can only be vaporized locally While the evaporation material is evaporated only locally by energy input into the absorbent layer 6 using radiation corresponding to the structures to be deposited and is applied locally to the substrate 20 facing the transfer mask 1 ≪ / RTI >
Characterized in that the transfer mask (1) according to any one of the claims 1 to 6 is deposited and a target object-substrate defined as the distance between the evaporation areas of the evaporation layer (12) The spacing a _f is set while the substrate 20 is in contact with the ridges formed by the spacers 7 of the transfer mask 1,
A deposition method for locally distinguishably depositing a transfer mask and substrates. 10. The method of claim 9,
The mask-substrate interval a _g is set before the target object-substrate interval a _f is set and the contact between the transfer mask 1 and the substrate 20 is not made at the mask- ,
A deposition method for locally distinguishably depositing a transfer mask and substrates. 11. The method of claim 10,
In the case where the deposition is performed by the RTP (Rapid Thermal Processing) process,
A deposition method for locally distinguishably depositing a transfer mask and substrates. A deposition apparatus for depositing locally identifiable substrates (20)
The deposition apparatus comprises at least one absorbent layer 6 on a transparent intermediate carrier 2 and a continuous evaporation layer 12 of material to be vaporized thereon such that the vaporization layer 12 can only be vaporized locally A light source 22 for inputting energy into the transfer mask 1 using radiation and a fixing member 22 for fixing the transfer mask 1 and the at least one substrate 20 so as to face each other, Devices 24, 24 '
The deposition apparatus of claim 1 to claim 6 comprising, at least one retainer (24, 24 ') of the transfer mask (1) according to any one of items are targeted-substrate distance (a _f) a translation Having a translation means (26)
A deposition apparatus for depositing substrates locally.

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