KR20140061899A - Metal mask, organic light emitting display device and method of fabricating thereof - Google Patents

Abstract

The present invention relates to a metal mask for preventing defect of an organic light emitting layer which comprises a plurality of transmissive areas formed on an area corresponding to a blocking area and a panel area formed on a mother substrate; a first alignment groove aligned with a first alignment mark formed on a corner of the mother substrate by being formed on the blocking area; and a second alignment groove aligned with a second alignment mark formed on the panel area of the mother substrate by being formed on each of the transmissive areas.

Description

Technical Field [0001] The present invention relates to a metal mask for a display device, and an organic light emitting display device using the metal mask and a method of manufacturing the same. BACKGROUND ART < RTI ID = 0.0 >

The present invention relates to a metal mask for a display device, and an organic light emitting display device using the same, and a method of manufacturing the same. More particularly, the present invention relates to a metal mask for a display device, And an organic electroluminescent display device using the metal mask and a method of manufacturing the same.

Recently, organic electroluminescent devices using poly (p-phenylenevinylene) (PPV), which is one of conjugate polymers, have been developed, and research on organic materials such as conjugated polymers having conductivity has progressed actively . Studies for applying such organic materials to thin film transistors (TFTs), sensors, lasers, photoelectric elements and the like have been continuing, and organic electroluminescent display devices have been actively studied.

In the case of an electroluminescent device made of a phosphorescent inorganic material, an AC voltage of 200 V or more is required, and since the manufacturing process of the device is formed by vacuum deposition, it is difficult to increase the size of the device. Especially, have. However, since an electroluminescent device made of an organic material can develop an electroluminescent device capable of easily producing an electroluminescent device with excellent light emission efficiency, easiness of large-scale surface preparation, simplicity of process, particularly blue light emission, And is spotlighted as a display device.

Particularly, active matrix electroluminescent display devices having active driving elements in each pixel are actively studied as flat panel displays in the same manner as liquid crystal display devices.

The organic electroluminescent display device includes an anode, a cathode, and an organic light emitting layer between the anode and the cathode, and the organic light emitting layer is typically formed by a thermal evaporation method using a metal mask.

FIG. 1 is a view showing a metal mask for an organic light emitting layer of a conventional organic light emitting display, and FIG. 2 is a view showing an organic light emitting layer formed using a metal mask.

1, the metal mask 20 includes a transmissive portion 21 and a blocking portion 22. When the organic luminescent material is thermally deposited, the organic light-emitting vapor passes through only the transmissive portion 21, 21).

As shown in FIG. 2, a metal mask 20 is disposed below the substrate 10 to block and transmit the organic light-emitting vapor deposited on the substrate 10. At this time, the substrate 10 is formed with a plurality of panel regions 1 as mother substrate. Processes in the substrate 10 of the panel region 1 such as a photo process for forming a thin film transistor and various metals, a process for forming various insulating layers, a thermal deposition process for forming an organic light emitting layer And the organic light emitting display elements are formed in the respective panel regions 1, they are separated into the respective organic light emitting display elements by the cutting means.

The transmissive portion 21 of the metal mask 20 corresponds to the panel region 1 of the mother substrate 10. In the panel region 1, a plurality of pixel regions are formed. Although only the transmissive portion 21 is shown as being opened in the drawing, substantially all of the transmissive portions 21 are formed in a region corresponding to the organic light emitting layer of each of the plurality of pixel regions to be formed in the panel region 1, And the other area is not opened. In other words, a large number of slits corresponding to the organic light emitting layer are formed in the opening 21 of the metal mask 20, and the organic light emitting material is thermally deposited through the slit to form an organic light emitting layer having a fine pattern.

As described above, when the organic luminescent material is thermally deposited in the state that the mother substrate 20 is shut off by the metal mask 20, the vapor 26 passes only through the transmissive portion 21 of the metal mask 20, An organic light emitting material is deposited and thermally deposited on the panel region 1 of the substrate 10. Such a thermal deposition process can be repeated for the R, G, and B organic light emitting layers.

Aligning marks 13 are formed at four corners of the mother substrate 10 and alignment holes 23 are formed at the four corners of the metal mask 20. The alignment mark 13 and the alignment hole 23 align the metal mask 20 and the mother substrate 10 so that the organic light emitting material is always deposited at a desired position upon thermal deposition, It is possible to prevent defects due to misalignment of the organic light emitting layer.

However, the organic electroluminescent display device has the following problems.

The metal mask 20 is typically used repeatedly to form an organic light-emitting layer on a plurality of mother substrate 10. However, as the vapor of the organic luminescent material generated at the time of thermal oxidation is high, the metal mask 20 repeatedly expands and shrinks due to heat as the repetitive metal mask 20 is exposed to the vapor of the high temperature organic luminescent material. Repeated contraction and expansion of the metal mask 20 makes the position of the transmissive portion 21 of the metal mask 20 different from its original position (i.e., the interval between the transmissive portions 21 is different from the original set interval) Even if thermal deposition is performed after aligning the mother substrate 20 with the alignment marks 12 and the alignment holes 23, the position of the transmissive portion 21 of the metal mask 20 The organic light emitting layer formed by thermal evaporation is defective.

In addition, in recent years, the size of a pixel formed in a panel region is reduced as a result of manufacturing a high-resolution organic light emitting display device. As a result, the size of the organic light emitting layer formed in the pixel is also reduced. Therefore, in order to form the organic light emitting layer having such a fine structure, the slit formed in the transmissive portion 21 must also be formed in a minute size. However, as the thermal evaporation is repeated, the organic materials adhere to the ribs between the slits. The adhesion of the organic materials causes the contraction of the metal mask 20 due to the chemical bonding force between the organic materials. Therefore, a change occurs in the slit having a small size, and when the organic light emitting layer is formed by the metal mask 20, a defect occurs.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and it is an object of the present invention to provide a metal mask capable of preventing misalignment with a mother substrate by forming an alignment mark in a panel region of a mother substrate, .

Another object of the present invention is to provide an organic light emitting display device using the metal mask and a method of manufacturing the same.

According to an aspect of the present invention, there is provided a mask comprising: a plurality of transparent regions formed in a region corresponding to a panel region formed in a blocking region and a mother substrate; A first alignment hole formed in the blocking region and aligned with a first alignment mark formed at an edge of the mother substrate; And a second alignment groove formed in each transmissive area and aligned with a second alignment mark formed in the panel area of the mother substrate.

Also, an organic light emitting display device according to the present invention includes a substrate including a dummy region and a display region; A thin film transistor formed in each of a plurality of pixel regions of a display region of the substrate; A pixel electrode formed in a pixel region of the display region; An organic light emitting portion formed in a pixel region of the display region and emitting light; A common electrode formed on the organic light emitting portion and applying a signal to the organic light emitting layer; A first protective layer, an organic insulating layer, and a second protective layer formed on the dummy region and the display region; And an alignment mark formed on the dummy area to align the mask with the substrate.

The alignment mark is formed on the first insulating layer or the second insulating layer.

A method of fabricating an organic light emitting display device according to the present invention includes: providing a substrate including a dummy region and a display region; Forming a thin film transistor in each of a plurality of pixel regions of a display region of the substrate; Forming an alignment mark in a dummy region of the substrate; Forming a pixel electrode in a pixel region of the display region; Forming an organic light emitting portion for emitting light in a pixel region of the display region; Forming a common electrode on the organic light emitting portion; And forming a first protective layer, an organic insulating layer and a second protective layer on the dummy region and the display region.

In the present invention, an alignment mark is formed in units of panel regions as well as an alignment mark is formed in units of mother substrates. An alignment hole of the metal mask is formed not only on the edge of the mask but also on the transmissive portion corresponding to the panel region. As shown in FIG. Therefore, defects of the organic light emitting layer due to misalignment can be prevented.

1 is a view showing a conventional metal mask for an organic electroluminescence display device;
2 is a view showing an organic light-emitting layer formed on a panel region of a mother substrate using a conventional metal mask.
3 is a view showing the formation of an organic light-emitting layer in a panel region of a mother substrate using a metal mask according to the present invention.
4 is a cross-sectional view illustrating a structure of an organic light emitting display device according to the present invention.
5A to 5F are views showing a method of manufacturing an organic electroluminescence display device according to the present invention.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

3 is a schematic view showing deposition of an organic light emitting material of an organic light emitting display device according to the present invention.

As shown in FIG. 3, a plurality of panel regions 101 are formed on the mother substrate 110, and a metal mask 120 is disposed on the lower (or upper) portion of the panel region 101. At this time, the metal mask 120 is provided with a transmitting portion 121 in a region corresponding to the panel region 101 of the mother substrate 110.

Although not shown in the drawings, a plurality of slits are formed in the transmissive region 121 at positions corresponding to the formation regions of the organic light-emitting layers formed in the plurality of pixels of the panel region 101, An organic material is deposited on the organic light emitting layer forming region of the plate 110 to form an organic light emitting layer.

A first alignment mark 113 is formed at four corners of the mother substrate 110 and a second alignment mark 114 is formed at a lower end of each panel region 101. A first alignment hole 123 is also formed at four corners of the metal mask 120 aligned with the mother substrate 110. A second alignment hole 124 is formed at a lower end of each transmissive portion 121 do.

The first alignment mark 113 and the second alignment mark 114, the first alignment hole 123 and the second alignment hole 124 are for accurately aligning the metal mask 120 with the mother substrate 110 . That is, when the metal mask 120 is aligned with the mother substrate 110, the first alignment mark 113 and the first alignment hole 123 are aligned to align the metal mask 120 with the mother substrate 110 And the second alignment mask 114 is aligned with the second alignment hole 124 to align the respective openings 120 with the panel area 101. [

The metal mask 120 is aligned with the mother substrate 110 by using the first alignment mark 113 and the second alignment mark 114, the first alignment holes 123 and the second alignment holes 124, The organic light emitting layer can be formed by laminating the organic light emitting material to the panel region 101 of the mother substrate 110 by thermal deposition.

The alignment of the first alignment mark 113 and the first alignment hole 123 and the alignment of the second alignment mark 114 and the second alignment hole 124 can be performed by the operator through the first alignment hole 123 and / The first alignment mark 113 and the second alignment mark 114 appearing through the second alignment holes 124 may be determined by observing the first alignment marks 113 and the first alignment marks 113, The second alignment mark 114, and the second alignment hole 124, and then the alignment can be automatically determined by the image processing.

Since the R, G, and B organic emission layers are formed in the respective panel regions 101 of the mother substrate 110, the deposition process of the organic emission materials for forming the respective organic emission layers is repeated at least three times, At least three masks, i.e., the positions of the slits, are required for the R, G, and B organic light emitting layers 120. By repeating the deposition process using these three metal masks 120, R, G , And B can be formed.

As described above, in the present invention, the metal mask 120 is not simply aligned with the mother substrate 110 by the first alignment mark 113 and the first alignment hole 123 but the second alignment mark 114 and the second The organic light emitting layer formed in each panel region 101 can be formed at an accurate position by aligning the respective panel regions 101 with the opening portions 121 of the metal mask 120 by the alignment holes 124.

Particularly, in the present invention, since the metal mask 120 and the mother substrate 110 are aligned in the unit of the panel region, even when the metal mask 120 repeatedly expands and contracts due to the thermal deposition process or the like, The organic light emitting layer can be formed at a desired position of the region.

4 is a cross-sectional view illustrating an organic light emitting display device of the present invention manufactured using the metal mask. At this time, only the dummy area in which the outermost pixel of the display area of the panel and the second alignment mark for the panel are formed is shown for convenience of explanation. That is, since the first alignment marks formed on the dummy substrate are not included in the organic light emitting display device processed in the panel area unit, they are omitted.

As shown in FIG. 4, a driving thin film transistor is formed on a display portion of a substrate 210 made of a soft material such as plastic or a rigid material such as glass. Although not shown in the drawing, the driving TFT includes a buffer layer 222 formed on a substrate 210, and a buffer layer 222 formed on a R, G, and B pixel regions on the buffer layer 222, A first insulating layer 223 formed on the entire surface of the substrate 210 on which the semiconductor layer 212 is formed; a gate electrode 211 formed on the first insulating layer 223; A second insulating layer 224 formed over the entire surface of the substrate 210 so as to cover the gate electrode 211 and a second insulating layer 224 formed over the semiconductor layer (not shown) through contact holes formed in the first insulating layer 223 and the second insulating layer 224. [ And a source electrode 214 and a drain electrode 215 which are in contact with the source and drain electrodes 212 and 212, respectively.

The buffer layer 222 may be formed of a single layer or a plurality of layers, and the semiconductor layer 212 may be formed of a transparent oxide semiconductor such as crystalline silicon or IGZO (Indium Gallium Zinc Oxide) And a source electrode 214 and a drain electrode 215 are in contact with the doping layer.

The first insulating layer 223 and the second insulating layer 224 may be formed of a metal such as SiO ₂ , SiNx, or the like. The gate electrode 211 may be formed of a metal such as Cr, Mo, Ta, Cu, , Or a dual layer of SiO ₂ and SiN x. The source electrode 214 and the drain electrode 215 may be formed of Cr, Mo, Ta, Cu, Ti, Al, or Al alloy.

An alignment mark 284 is formed on the second insulation layer 224 of the dummy area. The alignment mark 284 is an alignment mark formed at the lower end of the panel area, not a mark formed at the edge of the mother substrate.

The alignment mark 284 may be formed of a metal for aligning the metal mask with the substrate 210 when aligned with the alignment holes of the metal mask in forming the organic light emitting layer. In particular, the alignment mark 284 may be formed of Cr, Mo, Ta, Cu, Ti, Al, or Al alloy by the same process as the source electrode 214 and the drain electrode 215.

In addition, the alignment mark 284 may be formed on the first insulating layer 223 instead of the second insulating layer 224. In this case, the alignment mark 284 may be formed of the same metal as the gate electrode 211 by the same process.

Although not shown in the drawing, a gate pad for applying a scan signal to the gate electrode 211 of the driving thin film transistor and a data pad for applying a signal to the pixel electrode are formed in the dummy region.

A third insulating layer 226 is formed on the substrate 210 on which the driving TFT is formed, and a pixel electrode 120 is formed thereon. The third insulating layer 226 may be formed of an inorganic insulating material such as SiO ₂ . Although not shown, an overcoat layer may be formed on the third insulating layer 226 to planarize the substrate 210.

A contact hole 229 is formed in the upper third insulating layer 226 of the drain electrode 215 of the driving thin film transistor formed in the pixel region in the display region, (220) is electrically connected to the drain electrode (215) of the driving thin film transistor through the contact hole (229). The pixel electrode 220 is made of a metal such as Ca, Ba, Mg, Al, or Ag, and an image signal is applied from the outside through the drain electrode 215 of the driving TFT.

A bank layer 228 is formed at the boundary of each pixel region on the third insulating layer 226 in the display region. The bank layer 228 is a kind of barrier rib for preventing each pixel region from being mixed and outputting light of a specific color outputted from an adjacent pixel region. In addition, since the bank layer 228 fills a part of the contact hole 229, the step is reduced, and as a result, the organic light emitting part is prevented from being defective due to an excessive step in forming the organic light emitting part. The bank layer 228 is formed to partially extend to the outer area.

An organic light emitting portion 225 is formed on the pixel electrode 220 between the bank layers 228. The organic light emitting part 225 includes an R-organic emitting layer for emitting red light, a G-organic emitting layer for emitting green light, and a B-organic emitting layer for emitting blue light. Although not shown in the drawing, the organic light emitting part 225 includes an electron injection layer for injecting electrons and holes, respectively, as well as an organic light emitting layer, an electron injection layer for transporting electrons and holes injected into the organic light emitting layer, And a hole transport layer may be formed.

Further, the organic light emitting layer may be formed as a white organic light emitting layer which emits white light. In this case, R, G, and B color filter layers are respectively formed in the R, G, and B sub pixel regions on the lower side of the white organic light emitting layer, for example, the insulating layer 224 to form white light that is emitted from the white organic light emitting layer, , And converts it into blue light. The white organic light emitting layer may be formed by mixing a plurality of organic materials that emit red, green, and blue monochromatic light, or a plurality of light emitting layers that emit red, green, and blue monochromatic light, respectively.

The organic light emitting layer is formed by depositing an organic material by thermal evaporation in a state in which the metal mask is aligned with the substrate 210 by the alignment mark 284. [ Such thermal deposition may be used not only to form the organic light emitting layer of the organic light emitting portion 225 but also to form other organic light emitting portions made of an organic material such as an electron injecting layer, a hole injecting layer, an electron transporting layer, and a hole transporting layer. That is, the electron injection layer, the hole injection layer, the electron transport layer, the hole transport layer, and the organic light emitting layer are formed using the same metal mask or another metal mask.

A common electrode 230 is formed on the organic light emitting part 225 of the display part. The common electrode 230 is made of a transparent metal oxide material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

When the common electrode 230 is an anode of the organic light emitting portion 225 and the pixel electrode 220 is a cathode and a voltage is applied to the common electrode 230 and the pixel electrode 220, Electrons are injected into the organic light emitting part 225 and holes are injected from the common electrode 230 into the organic light emitting part 225 to generate an exciton in the organic light emitting layer, Light corresponding to the energy difference between LUMO (Lowest Unoccupied Molecular Orbital) and HOMO (Highest Occupied Molecular Orbital) of the light emitting layer is generated, and the light is emitted to the outside (upward direction of the common electrode 230 in the drawing).

A first passivation layer 241 is formed on the common electrode 230 in the dummy region and the display region, on the bank layer 228, and on the third insulating layer 226 over the entire substrate 210. The first passivation layer 241 is formed of an inorganic material such as SiO ₂ or SiN x.

An organic layer 243 made of an organic material such as a polymer is formed on the first passivation layer 241 and a second passivation layer 244 made of an inorganic material such as SiO ₂ or SiNx is formed on the organic layer 243.

An adhesive layer 246 is formed on the second protective layer 244 and a protective film 248 is disposed on the adhesive layer 246 and the protective film 248 is attached to the second protective layer 244 by the adhesive layer 246.

As the adhesive, any material can be used as long as it has good adhesion and good heat resistance and water resistance. In the present invention, a thermosetting resin such as an epoxy compound, an acrylate compound or an acrylic rubber is used. At this time, the adhesive layer 246 is applied to a thickness of about 5-100 [mu] m and cured at a temperature of about 80-170 [deg.] C. Further, a photo-curing resin may be used as the adhesive. In this case, the adhesive layer 246 is cured by irradiating the adhesive layer with light such as ultraviolet rays.

 The adhesive layer 246 not only bonds the substrate 210 and the protective film 248, but also acts as an encapsulant for preventing moisture from penetrating into the organic electroluminescent display device. Therefore, although the term 246 is referred to as an adhesive in the detailed description of the present invention, this is for convenience only, and the adhesive layer may be referred to as an encapsulant.

The protective film 248 is an encapsulation cap for encapsulating the adhesive layer 246. The encapsulation cap 248 may be a protective film such as a PS (polystyrene) film, a PE (polyethylene) film, a PEN (polyethylene naphthalate) film, Film.

A polarizing plate 249 may be attached to the upper portion of the protective film 248. The polarizing plate 249 transmits light emitted from the organic electroluminescence display device and does not reflect light incident from the outside, thereby improving image quality.

5A to 5F are views showing a method of manufacturing an organic light emitting display device according to the present invention. Here, the drawing is a sectional view, which includes a display area and a dummy area. Here, the present invention is applied to both flexible flexible organic electroluminescent display devices and flexible organic electroluminescent display devices, but the flexible organic electroluminescent display device will be described below.

First, as shown in FIG. 5A, a substrate 210 made of a plastic material such as polyimide (PI) is attached to a large-sized mother substrate 280 made of glass or the like with an adhesive or the like.

Thereafter, a buffer layer 222 made of an inorganic material or the like is formed on the substrate 210. At this time, the buffer layer 222 may be formed as a single layer or a plurality of layers. Then, a transparent oxide semiconductor, crystalline silicon, or the like is stacked over the entire surface of the substrate 210 by a CVD method and then etched to form a semiconductor layer 212 on the buffer layer 222. At this time, the crystalline silicon layer may be formed by laminating crystalline silicon, or may be formed by laminating amorphous silicon and then crystallizing the amorphous material by various crystallization methods such as laser crystallization. The n ⁺ or p ⁺ -type impurity is doped on both sides of the crystalline silicate layer to form a doping layer.

Next, an inorganic insulating material such as SiO ₂ or SiO x is deposited on the semiconductor layer 212 by CVD (Chemical Vapor Deposition) to form a first insulating layer 223, and then Cr, Mo, Ta, Cu , An opaque metal having good conductivity such as Ti, Al or Al alloy is deposited by a sputtering process and etched by a photolithography process to form a gate electrode 211 in each pixel region of the display portion do.

Then, an inorganic insulating material is deposited on the entire surface of the substrate 210 on which the gate electrode 211 is formed by a CVD method to form a second insulating layer 224.

The first insulating layer 223 and the second insulating layer 224 are etched to form a contact hole through which the semiconductor layer is exposed and then Cr, Mo, Ta, Cu, Ti A source electrode 214 and a drain electrode 215 which are electrically connected to the semiconductor layer 212 through the contact holes are formed in the display portion by stacking and then etching the opaque metal having high conductivity such as Al or Al alloy by a sputtering method, And an alignment mark 283 is formed in the dummy area.

Although the alignment mark 283 is formed on the second insulation layer 224 in the drawing, the alignment mark 283 may be formed on the first insulation layer 223 by the same process as the gate electrode 211.

5B, an inorganic insulating material is stacked over the entire surface of the substrate 210 on which the source electrode 214 and the drain electrode 215 and the first metal layer 224 and the second metal layer 294 are formed. A third insulating layer 226 is formed and a part of the region is etched to form a contact hole 229 in the display region. At this time, the third insulating layer 226 may be formed by stacking SiO ₂ , and the drain electrode 215 of the thin film transistor is exposed to the outside by the contact hole 229.

 Thereafter, a metal such as Ca, Ba, Mg, Al, or Ag is stacked over the entire surface of the substrate 210 and etched to form a pixel, which is connected to the drain electrode 215 of the driving thin film transistor through the contact hole 229, Electrode 220 is formed.

Then, as shown in Fig. 5C, a bank layer 228 is formed in a part of the display region and the dummy region. The bank layer 228 in the display section serves to divide each pixel and prevent light of a specific color outputted from adjacent pixels from being mixed and output, and filling a part of the contact hole 229 to reduce a step. At this time, the bank layer 228 is formed by stacking organic insulating materials and then etching, but may be formed by stacking and etching the inorganic insulating material CVD method.

Thereafter, the metal mask 290 on which the transmissive portion 291 and the blocking portion 292 are formed is placed on the substrate 210 and the alignment hole 293 is manually or automatically positioned on the alignment mark 283 formed on the substrate 210 The organic light emitting part 225 is formed by depositing an organic material between the bank layers 228 on the pixel electrode 220 by aligning the metal mask 290 on the substrate 210 by thermal deposition do.

At this time, the electron injecting organic material, the electron transporting organic material, the organic light emitting organic material, the hole transporting organic material and the hole injecting organic material are sequentially deposited in the masked state by the metal mask 290 to form an electron injecting layer, , A hole transporting layer and a hole injecting layer are formed.

In addition, since the organic light emitting part 225 is composed of R, G, and B organic light emitting parts, the R, G, and B organic light emitting parts can be formed by repeating the thermal deposition process using the metal mask 290 do.

In the above description, the bank layer 228 is formed and the organic light emitting portion 225 is formed therebetween, but the organic light emitting portion 225 may be formed first and the bank layer 228 may be formed.

5D, a transparent conductive material such as ITO or IZO is deposited on the bank layer 228 and the organic light emitting portion 225 by sputtering and etched to form the common electrode 221, An inorganic material is deposited on the common electrode 221 and the bank layer 228 to form a first protective layer 241.

5E, an organic material such as a polymer is laminated on the first passivation layer 241 to form an organic layer 242. Next, as shown in FIG. At this time, the organic layer 242 may be formed by a screen printing method. That is, although not shown in the drawing, the screen is disposed on the substrate 210, the polymer is filled on the screen, and the organic layer 242 is formed by applying pressure by a doctor blade or a roll. The organic layer 242 is formed to a thickness of about 8-10 μm and extends to a certain region of the dummy region and the dummy region (chamfered region) to completely cover the bank layer 228. Then, an inorganic material such as SiO ² or SiO x is laminated on the organic layer 242 to form a second protective layer 244 on the organic layer 242.

5F, an adhesive layer 246 is formed by laminating an adhesive on the second protective layer 244, a protective film 248 is placed on the adhesive layer 246, a pressure is applied to the protective film 248, . At this time, a thermosetting resin or a photo-curable resin may be used as the adhesive. When a thermosetting resin is used, heat is applied after bonding the protective film 248, and when the photo-curing resin is used, the adhesive layer 246 is cured by irradiating light after the protective film 248 is bonded. Then, the polarizing plate 249 is attached to the protective film 248 to complete the organic light emitting display device.

Although not shown in the drawing, a plurality of organic electroluminescent display devices are formed in units of a mother substrate, and a deposition mask of the organic light emitting units is aligned with a mother substrate. When a display device is completed in units of panel regions The protective film is attached or the polarizing plate is attached), the organic light emitting display device is cut by the cutting means.

As described above, in the present invention, alignment marks are formed in units of panel regions as well as alignment marks are formed in units of mother substrates, and alignment holes of the metal mask are formed not only in the corners of the mask but also in the transmissive portions corresponding to the panel regions, The metal mask can be accurately aligned with the mother board.

In the above description, the organic electroluminescence display device has a specific structure. However, the present invention is not limited to the organic electroluminescence display device having such a specific structure. For example, in the organic electroluminescent display device described above, a structure is disclosed in which light is emitted upwardly, that is, through a protective film. However, the present invention is not limited to such a structure but may be a structure in which light is emitted in a downward direction, Can also be applied. In this case, a transparent conductive material may be used for the pixel electrode and an opaque metal may be used for the common electrode.

In the detailed description, the structure of the driving thin film transistor is also a top gate structure, but a bottom gate structure and a thin film transistor having various structures can be applied.

In other words, in the detailed description, the structure of the driving thin film transistor, the electrode structure, and the structure of the organic light emitting portion are disclosed in a specific structure, but the present invention is not limited to this specific structure, but is applied to various structures. That is, in the present invention, if the substrate 11 is formed to have a structure in which the substrate 11 is exposed without forming a protective layer in the outermost region of the organic light emitting display, all structures of the currently known driving thin film transistors, .

210: substrate 220: pixel electrode
222: buffer layers 223, 124, 126: insulating layer
225: organic light emitting portion 228: bank layer
230: common electrode 241, 244: protective layer
242: organic layer 280: mother board
284: alignment mark 290: metal mask
293: Alignment hole

Claims (17)

A plurality of transmissive areas formed in areas corresponding to panel areas formed in the blocking areas and the mother substrate;
A first alignment hole formed in the blocking region and aligned with a first alignment mark formed at an edge of the mother substrate; And
And a second alignment groove formed in each transmissive area and aligned with a second alignment mark formed in the panel area of the mother substrate. The mask according to claim 1, wherein the first alignment groove is formed at four corners of the blocking region. A substrate including a dummy region and a display region;
A thin film transistor formed in each of a plurality of pixel regions of a display region of the substrate;
A pixel electrode formed in a pixel region of the display region;
An organic light emitting portion formed in a pixel region of the display region and emitting light;
A common electrode formed on the organic light emitting portion and applying a signal to the organic light emitting layer;
A first protective layer, an organic insulating layer, and a second protective layer formed on the dummy region and the display region; And
And an alignment mark formed on the dummy area to align the mask with the substrate. The organic light emitting display device according to claim 3, wherein the substrate is a flexible substrate. 5. The organic electroluminescent display device according to claim 4, wherein the flexible substrate is made of polyimide. The method of claim 3,
An adhesive layer formed on the second protective layer; And
And a protective film adhered to the second protective layer by the adhesive layer. The thin film transistor according to claim 3,
A semiconductor layer;
A first insulating layer formed on the substrate on which the semiconductor layer is formed;
A gate electrode formed on the first insulating layer;
A second insulating layer formed on the substrate to cover the gate electrode; And
And a source electrode and a drain electrode formed on the second insulating layer. 8. The organic light emitting display as claimed in claim 7, wherein the alignment mark is formed on the first insulating layer. 8. The organic light emitting display according to claim 7, wherein the alignment mark is formed on the second insulating layer. Providing a substrate comprising a dummy region and a display region;
Forming a thin film transistor in each of a plurality of pixel regions of a display region of the substrate;
Forming an alignment mark in a dummy region of the substrate;
Forming a pixel electrode in a pixel region of the display region;
Forming an organic light emitting portion for emitting light in a pixel region of the display region;
Forming a common electrode on the organic light emitting portion; And
And forming a first protective layer, an organic insulating layer, and a second protective layer on the dummy region and the display region. 11. The method of claim 10, wherein forming the thin film transistor comprises:
Forming a semiconductor layer;
Forming a first insulating layer on the substrate on which the semiconductor layer is formed;
Forming a gate electrode over the first insulating layer;
Forming a second insulating layer on the substrate so as to cover the gate electrode; And
And forming a source electrode and a drain electrode on the second insulating layer. 12. The method according to claim 11, wherein forming the alignment mark comprises forming a metal layer on the first insulating layer. 13. The method of claim 12, wherein the metal layer is formed simultaneously with the gate electrode. 12. The method according to claim 11, wherein forming the alignment mark comprises forming a metal layer on the second insulating layer. 15. The method of claim 14, wherein the metal layer is formed simultaneously with a source electrode and a drain electrode. The method of claim 10, wherein providing the substrate comprises providing a mother substrate with a flexible substrate. 17. The method of claim 16, further comprising separating the flexible substrate from the mother substrate after forming the first protective layer, the organic insulating layer, and the second protective layer.

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