KR20140050993A - Zn compound semiconductor and thin film transistor comprising the same - Google Patents

Zn compound semiconductor and thin film transistor comprising the same Download PDF

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Publication number
KR20140050993A
KR20140050993A KR1020120117503A KR20120117503A KR20140050993A KR 20140050993 A KR20140050993 A KR 20140050993A KR 1020120117503 A KR1020120117503 A KR 1020120117503A KR 20120117503 A KR20120117503 A KR 20120117503A KR 20140050993 A KR20140050993 A KR 20140050993A
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South Korea
Prior art keywords
compound semiconductor
thin film
film transistor
channel
phase
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KR1020120117503A
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Korean (ko)
Inventor
류명관
손경석
한승우
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삼성전자주식회사
서울대학교산학협력단
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Priority to KR1020120117503A priority Critical patent/KR20140050993A/en
Publication of KR20140050993A publication Critical patent/KR20140050993A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Abstract

Zn compound semiconductor and a thin film transistor including the same. The disclosed Zn compound semiconductor can control the carrier concentration in the Zn compound semiconductor to an appropriate level by adding Cl.

Description

Zn compound semiconductor and a thin film transistor including the Zn compound semiconductor and the thin film transistor,

The disclosed embodiments relate to a compound semiconductor and a thin film transistor including the compound semiconductor. More particularly, the present invention relates to a semiconductor material to which a new substance is added to a Zn compound and a thin film transistor including the same.

BACKGROUND ART [0002] Thin film transistors are currently used in various fields. In particular, they are used as switching and driving devices in a display field, and are used as selection switches of a cross-point type memory device.

Currently, liquid crystal display (LCD) is the main axis for TV panels, and organic light emitting displays are being studied for application to TV. The development of display technology for TVs is developing in a way to meet the demands of the market. The market requires large-sized TV or DID (Digital Information Display), low price, high definition (video expression power, high resolution, brightness, contrast ratio, color reproduction). In order to meet such requirements, there is a need for a thin film transistor to be applied as a switching and driving device of a display having excellent performance, along with enlargement of a substrate such as glass.

An amorphous silicon thin film transistor (a-Si TFT) is used as a driving and switching element of a display. This is the most widely used device which can be formed uniformly on a large substrate over 2m * 2m at low cost. However, due to the trend toward larger and higher-resolution displays, high performance is required for device performance, and it is believed that the conventional a-Si TFT having a mobility of 0.5 cm 2 / Vs will reach the limit. Therefore, there is a need for high-performance TFTs and manufacturing techniques with higher mobility than a-Si TFTs.

Polycrystalline silicon thin film transistor (poly-Si TFT), which has much higher performance than a-Si TFT, has a high mobility of several tens to several hundreds cm 2 / Vs, and thus can be applied to a high- . In addition, the problem of deterioration of the device characteristics is very small as compared with the a-Si TFT. However, in order to fabricate a poly-Si TFT, a complicated process is required compared to an a-Si TFT, and the additional cost is also increased. Therefore, p-Si TFT is suitable for high definition display and products such as OLED, but its cost is inferior to that of conventional a-Si TFT, so its application is limited. In the case of p-Si TFTs, manufacturing processes using large-sized substrates larger than 1 m have not been realized so far due to technical problems such as limitations of manufacturing equipment and unevenness in uniformity. Thus, application to TV products is difficult.

Accordingly, there is a demand for a new TFT technology having both advantages of a-Si TFT and advantages of poly-Si TFT. Research has been actively conducted on this, and a representative example thereof is a Zn compound semiconductor device. Zn compound semiconductors are Zn oxide semiconductors based on Zn-based multi-cation compounds and Zn oxynitride semiconductor devices doped with multi-anion compositions.

One aspect of the present invention relates to a Zn compound semiconductor including Cl.

Another aspect of the present invention relates to a thin film transistor using a Zn compound semiconductor including Cl in a channel region.

In the embodiment of the present invention,

In the Zn compound semiconductor,

The Zn compound semiconductor is composed of Zn and nitrogen,

The Zn compound semiconductor can provide a Zn compound semiconductor further containing Cl.

The Zn compound semiconductor may include Zn oxynitride to which Cl is added.

The Zn compound semiconductor may be formed of a material containing nitrogen and Cl in Zn.

The Zn compound semiconductor may include an amorphous phase.

The Zn compound semiconductor may include a nanocrystalline phase.

The Zn compound semiconductor may have a mixed phase structure of an amorphous phase and a crystalline phase.

The Zn compound semiconductor may be a Group I element, a Group II element, a Group III element, a Group IV element or an Ln series element (La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, , Yb, Lu).

Further, in the embodiment of the present invention,

A gate electrode;

A channel formed at a position corresponding to the gate electrode and formed by adding Cl to a Zn compound semiconductor containing Zn and nitrogen;

A gate insulator formed between the gate electrode and the channel; And

And a Zn compound semiconductor having a source and a drain formed in contact with both sides of the channel, respectively.

According to the embodiment of the present invention, by adding Cl to the Zn compound semiconductor, the characteristics of the high mobility device can be ensured by controlling the carrier concentration in the Zn compound semiconductor to an appropriate level.

1 is a view illustrating a bottom structure thin film transistor including a Zn compound semiconductor according to an embodiment of the present invention.
FIG. 2 is a view showing a top-type thin film transistor including a Zn compound semiconductor according to an embodiment of the present invention.
3A to 3E are views illustrating a method of manufacturing a thin film transistor including a Zn compound semiconductor according to an embodiment of the present invention.
FIGS. 4A and 4B show transfer curves of a thin film transistor using a thin film not doped with Cl and a thin film doped with Cl in a Zn compound semiconductor as a channel, and the gate voltage (V GS ) -drain current I DS ).

Hereinafter, a Zn compound semiconductor and a thin film transistor including the Zn compound semiconductor according to an embodiment of the present invention will be described in detail with reference to the drawings. It should be borne in mind that the thickness and width of each layer shown in the figures are exaggerated for clarity.

1 is a cross-sectional view illustrating a structure of a thin film transistor including a Zn compound semiconductor according to an embodiment of the present invention. 1 shows a bottom gate type thin film transistor.

1, a thin film transistor including a Zn compound semiconductor according to an embodiment of the present invention includes a substrate 10, a gate electrode 14 formed on the substrate 10, a substrate 10, and a gate electrode 14, And a gate insulating layer 16 formed on the gate insulating layer 16. A channel 19 may be formed on the region of the gate insulating layer 16 corresponding to the gate electrode 14 and a source 18a and a drain 18b may be formed on the gate insulating layer 16 on both sides of the channel 19. [ Can be formed.

The oxide layer 12 may be formed on the substrate 10 and the oxide layer 12 may be a layer formed by thermally oxidizing the surface of the substrate 10.

2 is a cross-sectional view illustrating a structure of a thin film transistor including a Zn compound semiconductor according to an embodiment of the present invention. 2 shows a top gate type thin film transistor.

2, a substrate 20, a channel 22 formed on the substrate 20, and a source 24a and a drain 24b formed on both sides of the channel 22, respectively. A gate insulating layer 26 may be formed on the substrate 20, the source 24a and the drain 24b, and a gate electrode 28 may be formed on the gate insulating layer 26. [ Alternatively, an insulating layer may be further formed on the surface of the substrate 20, and the insulating layer may be a thermal oxidation layer formed by thermally oxidizing the substrate surface.

The Zn compound semiconductor according to an embodiment of the present invention may be a substance in which Cl is further added to Zn oxynitride or a substance containing nitrogen and Cl in Zn, . The Zn compound semiconductor according to an embodiment of the present invention may be formed in a mixed phase including both crystalline, amorphous, crystalline, and amorphous phases. In addition, the thin film transistor including the Zn compound semiconductor according to the embodiment of the present invention may be formed of a material containing Zn-oxynitride with Cl added thereto or a material containing Zn, 22).

Hereinafter, materials constituting each layer of the Zn compound semiconductor and the thin film transistor including the Zn compound semiconductor according to the embodiment of the present invention shown in FIGS. 1 and 2 will be described.

The substrates 10 and 20 can be made of Si, glass, or a substrate including an organic material, and there is no particular limitation to the use of a substrate used for a semiconductor device. An insulating layer may be selectively formed on the surfaces of the substrates 10 and 20, for example, SiO 2 formed by thermally oxidizing the surfaces of the Si substrates 10 and 20.

The gate electrodes 14 and 28 may be formed of a conductive material, and may include at least one of a metal, an alloy, a conductive metal oxide, and a conductive metal nitride. For example, the gate electrodes 14 and 28 may be formed of a metal such as Ti, Pt, Ru, Au, Ag, Mo, Al, W, or Cu or an alloy containing them, a conductive material such as IZO (InZnO) or AZO (AlZnO) Oxide or the like.

The gate insulating layers 16 and 26 may be formed using an insulating material used in a semiconductor device. For example, HfO 2 , Al 2 O 3 , and Si (high-k) materials having a dielectric constant higher than that of SiO 2 or SiO 2 3 N 4, or a mixture thereof.

The sources 18a and 24a and the drains 18b and 24b may be formed of a conductive material and may include at least one of a metal, an alloy, a conductive metal oxide, and a conductive metal nitride. For example, it may be formed of a metal such as Ti, Pt, Ru, Au, Ag, Mo, Al, W or Cu or an alloy containing them or a conductive oxide such as IZO (InZnO) or AZO (AlZnO).

The channels 19 and 22 are formed of a Zn compound semiconductor. Specifically, the channels 19 and 22 may be a material formed by adding Cl to Zn oxynitride or a material containing nitrogen and Cl in Zn. The channels 19 and 22 may be formed in a structure of an amorphous phase or a nanocrystalline phase and may be formed of a mixed phase including both an amorphous phase and a nanocrystal phase. In addition, the channels 19 and 22 may be formed by adding Group I elements such as Li and K, Group II elements such as Mg, Ca and Sr, Group III elements such as Ga, Al, In and Y, Ce, Pr, Nd, Pm, Sm, Eu, Gd and Tb such as Ta, Vb, Nb and Sb or Group V elements such as Ti, Zr, Si, , Dy, Ho, Er, Tm, Yb, Lu), and the like.

The Zn compound semiconductor according to the embodiment of the present invention can be used as a driving transistor used in a flat panel display, a liquid crystal display (LCD), or an OLED (Organic Light Emitting Diodes), a transistor constituting a peripheral circuit of a memory element, Channel material.

Hereinafter, a method of manufacturing a thin film transistor including a Zn compound semiconductor according to an embodiment of the present invention will be described with reference to FIGS. 3A to 3E. Here, a method of manufacturing the bottom gate type thin film transistor shown in FIG. 1 will be described.

Referring to FIG. 3A, a substrate 10 is first provided. The substrate 10 may be made of Si, glass, or a substrate formed of an organic material. Alternatively, if the substrate 10 using the Si substrate, the insulating layer 12 may include SiO 2 formed by the Si substrate 10 is surface oxidized by the thermal oxidation process. Then, a conductive material layer 13 such as a metal, a metal alloy, a conductive metal oxide, or a conductive metal nitride is formed on the substrate 10.

Referring to FIG. 3B, the gate electrode 14 can be formed by patterning the conductive material layer 13. Referring to FIG. 3C, an insulating material layer is formed on the gate electrode 14 and is patterned to form the gate insulating layer 16. The gate insulating layer 16 may be formed of an insulating material such as silicon oxide, silicon nitride, hafnium (Hf) oxide, aluminum oxide, or the like.

3D, after forming a Zn compound layer in which Cl is added by a process such as PVD (Physical Vapor Deposition), CVD (Chemical Vapor Deposition) or ALD (atomic layer deposition) on the gate insulating layer 16, The channel 19 can be formed by patterning the Zn compound layer so as to remain on the gate insulating layer 16 corresponding to the electrode 14. The step of injecting Cl into the Zn compound may be a process such as plasma treatment, implantation, cosputtering, CVD or solution process. For example, a channel can be formed by a reactive sputtering process while mounting a Zn target in a chamber in the chamber and supplying chlorine, oxygen, and nitrogen gas. Alternatively, a Zn-Cl alloy target or an individual target of Zn and Cl may be placed in a chamber and oxygen and nitrogen gas may be supplied. The Cl composition ratio in the Zn compound semiconductor can be easily adjusted by changing the current value applied to the Cl target or by controlling the sputtering time.

Referring to FIG. 3E, a metal, a metal alloy, a conductive metal oxide, or a conductive metal nitride, which is a conductive material, is formed on the channel 19 and the gate insulating layer 16 and then patterned by a source 18a and a drain 18b. In addition, a heat treatment process can be further performed using a furnace, a rapid thermal annealing (RTA), a laser, or a hot plate.

FIGS. 4A and 4B are transfer curves of a thin film transistor using a Zn compound semiconductor as a channel, and are graphs showing changes in gate voltage (V GS ) -drain current (I DS ). Here, FIG. 4A shows a case of using a Zn compound semiconductor not doped with Cl as a channel, and FIG. 4B shows a transfer cuff when a Zn compound semiconductor doped with Cl is used as a channel. Here, the change in the drain current (I DS ) relative to the gate voltage (V GS ) was measured for each of the specimens 4 (PT1, PT2, PT3, PT4)

Referring to FIGS. 4A and 4B, in the case of FIG. 4B, the ON current is about 10 -2 to 10 -3 A, the OFF current is 10 -10 A or less, and the ON / 10 7 or more, indicating high on / off current ratio and low off current, and satisfies the characteristics as a transistor. On the other hand, in the case of FIG. 4A, the off current value is high, so that the on / off current ratio is lower than that of FIG. 4B. That is, when Cl is added to the Zn chemical semiconductor, the off current value is relatively decreased and the on / off current ratio is increased.

In addition, mobility and swing value tended to decrease when Cl was gradually added to the Zn compound semiconductor. When the composition of Cl is increased in the Zn compound semiconductor, the carrier concentration in the Zn compound semiconductor can be controlled to an appropriate level and the swing value of the transfer curve can be reduced. In the Zn compound semiconductor, the composition ratio of Cl to materials other than Zn can be selectively controlled.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Various electronic devices such as transistors for constitution can be manufactured. The composition ratio of the Zn compound semiconductor and the I DS -V GS graph according to the embodiment of the present invention can be changed depending on the type of the target used, the target applied voltage at the time of deposition, the deposition equipment, the deposition pressure, the oxygen partial pressure condition, . Also, even if the deposited thin film composition is the same, the characteristics of the thin film can be changed according to the deposition conditions. For example, the composition ratio of the Zn compound semiconductor can be controlled by controlling the partial pressure of oxygen or nitrogen gas supplied in the sputtering process.

The oxide thin film transistor according to an embodiment of the present invention can be used as a bottom gate type or a top gate type. As a result, the scope of the present invention is not to be determined by the described embodiments but should be determined by the technical idea described in the claims.

10, 20 ... substrate 12 ... insulating layer
14, 28 ... gate electrode 16, 26 ... gate insulating layer
19, 22 ... channels 18a, 24a ... source
18b, 24b ... drain

Claims (12)

In the Zn compound semiconductor,
The Zn compound semiconductor is composed of Zn and nitrogen,
Wherein the Zn compound semiconductor further comprises Cl. The method according to claim 1,
Wherein the Zn compound semiconductor is Zn compound semiconductor containing Zn oxynitride to which Cl is added. The method according to claim 1,
The Zn compound semiconductor is formed of a material containing nitrogen and Cl in Zn. The method according to claim 1,
Wherein the Zn compound semiconductor includes an amorphous phase. The method according to claim 1,
The Zn compound semiconductor includes a nanocrystalline phase. The method according to claim 1,
The Zn compound semiconductor has a mixed phase structure of an amorphous phase and a crystalline phase. The method according to claim 1,
The Zn compound semiconductor may be a Group I element, a Group II element, a Group III element, a Group IV element or an Ln series element (La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, , Yb, Lu). A gate electrode;
A channel formed at a position corresponding to the gate electrode and formed by adding Cl to a Zn compound semiconductor containing Zn and nitrogen;
A gate insulator formed between the gate electrode and the channel; And
And a Zn compound semiconductor having a source and a drain formed in contact with both sides of the channel. 9. The method of claim 8,
Wherein the Zn compound semiconductor includes a Zn compound semiconductor that is Zn oxynitride to which Cl is added. 9. The method of claim 8,
Wherein the Zn compound semiconductor comprises a Zn compound semiconductor including an amorphous phase. 9. The method of claim 8,
Wherein the Zn compound semiconductor includes a Zn compound semiconductor including a nanocrystalline phase. 9. The method of claim 8,
Wherein the Zn compound semiconductor includes a Zn compound semiconductor having a mixed phase structure of an amorphous phase and a crystalline phase.
KR1020120117503A 2012-10-22 2012-10-22 Zn compound semiconductor and thin film transistor comprising the same KR20140050993A (en)

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