KR20140042157A - Deposition method for die-bonding film - Google Patents

Abstract

The present invention relates to a method for depositing a die-bonding film capable of generating plasma in a process chamber having a substrate by applying an RF to a susceptor from RF power which is arranged on the lower part of the substrate and of assigning a direction for the lower part to the ion of a deposition response material. The present invention is provided to perform deposition by using PECVD of a reactive ion deposition (RID) type which applies the RF to the lower part of the substrate, thereby assigning the direction to the ion of the deposition response material and functioning as a shower head part as a ground electrode. The present invention is provided to uniformly form the plasma generated when the area of the shower head is larger than the area of the susceptor, thereby uniformly distributing the plasma formed in the process chamber and easily depositing a film having the same thickness. The present invention is provided to deposit the deposition response material before dissociation and form a thin film in which the hardening degree of the film is low without adding oxygen gas, thereby easily exfoliating the film in the final process and preventing the damage of a circuit pattern. [Reference numerals] (AA) Carry a substrate in which a circuit pattern is formed; (BB) Supply a deposition response material; (CC) Organic silicon precursor/O_2; (DD) Apply an RF from the lower part to the substrate; (EE) Generate plasma and assign a direction to the ion of the deposition response material; (FF) Complete the deposition of die-bonding film

Description

[0001] DEPOSITION METHOD FOR DIE-BONDING FILM [0002]

The present invention relates to a deposition method of a pressure-sensitive adhesive film for semiconductor packaging, and more particularly to a vapor deposition method for a pressure-sensitive adhesive film for semiconductor packaging, particularly a die bonding film, which can uniformly control the thickness of a film, To a method of depositing a die-bonding film which can prevent the pattern from being damaged.

 In general, the die bonding film is an ultra-thin film adhesive that bonds an IC chip and a circuit substrate, or an IC chip and an IC chip, and is used in post-semiconductor processing.

Korean Patent No. 816881 discloses a point bonding layer 20 composed of a support base layer 10, a point / adhesive layer 21 and a point / adhesive reinforcing layer 22, a wafer bonding layer 30 ) And a wafer bonding protective layer 40 are sequentially laminated on the surface of the wafer.

As disclosed in Korean Patent No. 816881, in order to fix the diced semiconductor chip frame and the related members to each other, the die-bonding film is put in a state in which the film-shaped dots and adhesive are fixed to the semiconductor wafer frame, , In the dicing step, dicing is performed in such a state that the adhesive fixing function is given by such a dicing die bonding film (point and adhesive film), and after the dicing, the semiconductor chip is bonded to the lower surface of the wafer bonding layer When a semiconductor chip including such a wafer bonding layer is required to be adhered to a portion to be adhered, it is completely adhered to the portion to be adhered.

On the other hand, in the manufacturing process of the semiconductor wafer package having the multilayered laminated structure, as shown in Fig. 2, the back side 1b of the circuit formation surface 1a of the wafer is ground to reduce the thickness of the semiconductor package, A thinning step is carried out to reduce the thickness of the substrate. For this thinning process, the adhesive 3 is uniformly applied to the pattern surface of the semiconductor wafer, the hard support such as glass is adhered and reinforced thereto, the wafer is conveyed to cut the back surface of the wafer, (4) or the like is removed.

When the hard support is peeled, the circuit pattern formed on the wafer must not be damaged by the peeling of the hard support, and peeling should be easy. For this purpose, not only the hardness of the film must be low but also the thickness of the film must be uniform over the entire area.

However, in the conventional method of depositing a die bonding film by PECVD, it has been pointed out that the circuit pattern already formed when the adhesive is removed in the final step is damaged.

Conventionally, a method of depositing a die-bonding film by PECVD deposition is performed by applying an RF power to a showerhead disposed on an upper portion of a substrate and grounding a lower susceptor to generate a plasma, or a lower ground is small, So that the film thickness of the die bonding film becomes thick. As a result, peeling becomes difficult at the time of peeling in the above-mentioned final step, and the circuit pattern may be damaged.

Further, in the conventional method of depositing a die-bonding film by PECVD, RF is applied to a showerhead to generate plasma, so that the precursor used for deposition of the die-bonding film is well dissociated by the plasma, There is a problem that the circuit pattern is damaged when peeling off.

 It is an object of the present invention to provide a method and apparatus for uniformly controlling the thickness of a film of a die bonding film so that a circuit pattern formed on a substrate by a pressure- And to provide a method of depositing a die-bonding film which can prevent the occurrence of the problem.

Another object of the present invention is to provide a method of depositing a die-bonding film in which an adhesive film can be easily peeled off at the time of debonding by lowering the hardness of a film formed by deposition of a die-bonding film.

In order to achieve the above object, a method of depositing a die-bonding film according to the present invention includes supplying a deposition reaction material to a surface of a substrate, and applying RF to a susceptor on which the substrate is placed from an RF power source disposed below the substrate. Thereby generating a plasma in the process chamber in which the substrate is placed and imparting a downward direction to the ions of the deposition reactant.

Here, the susceptor is an RF electrode, and the showerhead disposed on the susceptor and the substrate is a ground electrode.

Here, the deposition reaction material is an organic silicon precursor.

Here, the deposition reaction material is an organic silicon precursor and an oxygen gas.

Here, the flow rate ratio of the oxygen gas to the organic silicon precursor is 0% to 100%.

Wherein the organic silicon precursor is hexamethyldisiloxane.

The deposition thickness of the die-bonding film is in the range of 1,000 Å to 2,000 Å.

According to the method of depositing the die-bonding film of the present invention having the above-described structure, since the PECVD is performed by RID (Reactive Ion Deposition) type in which RF is applied to the lower portion of the substrate, The showerhead portion functions as a ground electrode and the area of the showerhead where the showerhead is grounded is formed to be larger than the area of the susceptor to which the RF power source is applied and the generated plasma is uniformly generated, And thus it is easy to deposit a film having a uniform thickness.

In addition, since the deposition reaction material such as the organic silicon precursor is deposited before dissociation, it is possible to form a dilute film having a low hardness even without adding oxygen gas, thereby facilitating peeling of the film in the final process, It is possible to prevent wearing.

In addition, since the process can be performed at relatively high pressure as compared with the conventional PECVD deposition method in which RF is applied to the showerhead, it is possible to improve the process efficiency and reduce the cost and time required for the process.

Further, it is possible to deposit a film having a lower hardness by appropriately adjusting the flow rate ratio of the organic silicon precursor and the oxygen gas.

1 and 2 are views showing a die-bonding film according to the prior art.
3 is a schematic diagram of an apparatus for carrying out RID-type PECVD deposition according to the present invention.
4 is a flowchart illustrating a method of depositing a die-bonding film according to the present invention.
5 is a SEM photograph of a film deposited by the method of depositing a die-bonding film according to the present invention.

Hereinafter, a method of depositing a die-bonding film according to the present invention will be described in detail with reference to the accompanying drawings. In describing the embodiments according to the present invention, the same reference numerals are used for the same components, and the description thereof may be omitted if necessary.

As shown in Figs. 3 to 5, in the method for depositing a die-bonding film according to the present invention, a substrate on which a circuit pattern is formed is first prepared, and the substrate is transferred into the process chamber. Then, a deposition reaction material is supplied to the surface of the substrate 1. [

RF is then applied from the RF power source 100 disposed below the substrate 1 to the susceptor 110 on which the substrate is placed to generate the plasma 130 in the process chamber in which the substrate is placed.

At this time, since the deposition reaction material is deposited by RED (Reactive Ion Deposition) type PECVD which applies RF to the lower part of the substrate, it is possible to impart downward directionality to the ions of the deposition reaction material, The potential difference between the cathode ends of the plasma sheath and the substrate (or heater) is increased to increase the energy of ions incident on the substrate.

Here, the susceptor is an RF electrode connected to the RF power source 100 disposed below the substrate 1, and the showerhead 120 disposed opposite to the susceptor functions as a ground electrode.

As a result, since the deposition is performed by PECVD of RID (Reactive Ion Deposition) type in which RF is applied to the lower portion of the substrate, the ions of the deposition reaction material are oriented, and the showerhead portion functions as a ground electrode, The area is formed to be larger than the area of the susceptor to which the RF power is applied, so that the generated plasma is uniformly generated, so that the plasma formed in the process chamber can be evenly distributed, and thereby it is easy to deposit a film having a uniform thickness.

In addition, since the deposition reaction material such as the organic silicon precursor is deposited before dissociation, it is possible to form a dilute film having a low hardness even without adding oxygen gas, thereby facilitating peeling of the film in the final process, It is possible to prevent wearing.

On the other hand, the deposition reaction material is exemplified by an organosilicon precursor. The organosilicon precursor is supplied into the process chamber in a gaseous state and is contacted with the substrate and deposited at a deposition temperature of about 25-40 < 0 > C.

The organic silicon precursor is preferably a linear siloxane. An example of the linear siloxane is hexamethyldisiloxane (HMDSO) represented by the following formula (1).

[Chemical Formula 1]

As described above, the experimental results are shown in Table 1 for the film thickness and ease of peeling with the use of hexamethyldisiloxane as the deposition reaction material.

number HMDSO flow rate thickness() Peelability One 10 500 Bad 2 10 1000 Good 3 10 2000 Good

As shown in Table 1, when hexamethyldisiloxane was used as a deposition reaction material and the deposition was carried out to a thickness of 500 Å, the hardness of the deposited film was very high, so that debonding was difficult in the final process and the circuit pattern was damaged .

However, when the thickness of the film was deposited to a thickness of 1,000 ANGSTROM to 2,000 ANGSTROM, the degree of hardness of the film was lowered, which facilitated debonding in the final process and prevented the circuit pattern from being damaged.

On the other hand, the deposition reaction material may add oxygen gas (O 2) as a reactive gas to the organic silicon precursor. The hardness of the surface of the film of the die-bonding film deposited by adding oxygen gas as the deposition reaction material can be lowered.

As shown in FIG. 5, when oxygen gas (O 2) is added as a reactive gas to the organosilicon precursor, the porous property of the deposited film is increased to increase the roughness of the film itself and the film hardness It is found that the peeling of the film is facilitated later.

Table 2 shows the results obtained by adding oxygen gas (O2) as a reactive gas to the organosilicon precursor in the respective proportions by the conventional PECVD deposition method as the deposition reaction material. The results are shown in Table 2, and the RID type PECVD deposition method Are shown in Table 3, respectively.

Here, the non-uniformity is a ratio of the difference in film thickness between the center portion and the edge portion of the substrate.

number HMDSO flow rate Oxygen flow rate Thickness (Å) Non-uniformity Peelability One 10 - 3,968 8.3 Bad 2 10 10 2,541 17.1 usually

number HMDSO flow rate Oxygen flow rate Thickness (Å) Non-uniformity Peelability One 10 - 1,109 3.47 Good 2 10 10 1,484 16.6 Great

As can be seen from Tables 2 and 3, when the die-bonding film was deposited using the conventional PECVD method, the thickness of the film was not uniform. As a result of the experiment conducted by the present inventors, it was found that when the RVD type PECVD deposition method according to the present invention was used, the nonuniformity of the film was 5% when the film was deposited with HMDSO precursor without oxygen, Or more, and improved by about 75% or more.

In addition, when deposited by the conventional PECVD deposition method, it was found that the grounding at the lower end is small, plasma is crowded and the density of the film is increased, thereby increasing the hardness of the film and deteriorating the peelability. Further, in the case of deposition by the conventional PECVD deposition method, even when oxygen gas is added, the hardness of the film becomes slightly poor, but the uniformity of the film thickness becomes poor, and there is a limit to the improvement of the hardness due to the addition of oxygen gas There is a limit to improvement in peelability.

On the other hand, in the case of depositing by the RID type PECVD deposition method according to the present invention, as shown in Table 3 and FIG. 5, the showerhead portion functions as a ground electrode and the area of the showerhead, Is formed to be larger than the area of the susceptor to which the plasma is uniformly distributed, so that the uniformity is improved and the film is deposited in a dilute form with a low hardness, so that the peelability is improved.

It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to be exemplary and explanatory only and are not to be construed as limiting the scope of the inventive concept. And it is obvious that it is included in the technical idea of the present invention.

1: substrate
2: die bonding film deposition film
3: Adhesive
4: Glass
100: RF power supply
110: susceptor
120: Shower head

Claims (7)

A method of depositing a die bonding film on a substrate,
Supplying a deposition reactant to a surface of the substrate;
Applying RF to a susceptor on which the substrate is placed from an RF power source disposed at the bottom of the substrate to generate a plasma in a process chamber in which the substrate is placed and to impart downward directivity to the ions of the deposition reactant; A method of depositing a die bonding film, characterized in that.
The method according to claim 1,
Wherein the susceptor is an RF electrode and the showerhead disposed on the susceptor and the substrate is a ground electrode.
The method according to claim 1,
Lt; RTI ID = 0.0 > 1, < / RTI > wherein the deposition reactant comprises an organosilicon precursor.
The method according to claim 1,
And the deposition reaction material comprises an organosilicon precursor and oxygen gas.
The method according to claim 3 or 4,
Wherein the organic silicon precursor is hexamethyldisiloxane. ≪ RTI ID = 0.0 > 11. < / RTI >
6. The method of claim 5,
Wherein the deposition thickness of the die-bonding film is in the range of 1,000 A to 2,000 A.
3. The method of claim 2,
Wherein the area of the showerhead is larger than the area of the susceptor.

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