KR20230142395A - Substrate processing method and method of manufacturing organic light emitting device using the same - Google Patents

Abstract

The present invention includes a process of forming a first insulating layer on the upper surface of a substrate; A process of pattern forming a second insulating layer on the first insulating layer; and etching the first insulating layer using the second insulating layer as a mask.

Description

Substrate processing method and method of manufacturing organic light emitting device using the same {SUBSTRATE PROCESSING METHOD AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DEVICE USING THE SAME}

The present invention relates to a substrate processing method, and more specifically, to an etching process for etching a thin film formed on a substrate.

Generally, in order to manufacture solar cells, semiconductor devices, flat panel displays, etc., it is necessary to form a predetermined thin film layer, thin film circuit pattern, or optical pattern on the surface of the substrate. To do this, deposit a thin film of a specific material on the substrate. Semiconductor manufacturing processes such as a thin film deposition process, a photo process that selectively exposes a thin film using a photosensitive material, and an etching process that forms a pattern by removing the thin film from the selectively exposed portion are performed.

This semiconductor manufacturing process is carried out inside a substrate processing device designed in an optimal environment for the process, and recently, substrate processing devices that perform a deposition or etching process using plasma have been widely used.

Substrate processing devices using plasma include PECVD (Plasma Enhanced Chemical Vapor Deposition) devices that form thin films using plasma, and plasma etching devices that etch and pattern thin films.

1 is a diagram schematically showing a general substrate processing apparatus.

When described with reference to FIG. 1, the substrate processing apparatus includes a chamber 15; At least one substrate (1) disposed inside the chamber (15); a substrate placing unit 2 that forms plasma for depositing a thin film on the surface of the substrate 1 and places the substrate 1 thereon; a ground electrode (7) connected to the substrate placing portion (2); a gas injection unit (3) facing the substrate placing unit (2) and spraying a deposition gas for depositing a thin film on the surface of the substrate (1) or an etching gas for etching the thin film; a gas supply unit (5) connected to the gas injection unit (3) to supply gas; It may include an RF electrode 8 that supplies high-frequency power for forming plasma to the gas injection unit 3.

A mask is required to etch a thin film, but when using a mask, not only is a separate process required to clean the mask, but it also takes time to insert and remove the mask, which reduces productivity.

The present invention was designed to solve the above-described conventional problems, and the purpose of the present invention is to provide a substrate processing method for etching a thin film without using a separate shadow mask during the etching process.

Additionally, the purpose of the present invention is to provide a substrate processing method that increases the etching speed in order to simultaneously etch thin films with different etch rates when etching a thin film without a separate shadow mask.

Additionally, the purpose of the present invention is to provide a substrate processing method that can improve productivity by improving the etching speed of the thin film, and can also prevent elements inside the thin film from being damaged by performing the etching process quickly.

In order to achieve the above object, the present invention includes a process of forming a first insulating layer on the upper surface of a substrate; A process of pattern forming a second insulating layer on the first insulating layer; and etching the first insulating layer using the second insulating layer as a mask.

The process of forming the first insulating layer may be performed using atomic layer deposition without a mask, and the process of forming the second insulating layer as a pattern may be performed using chemical vapor deposition using a mask.

The process of forming the first insulating layer is performed using atomic layer deposition without a mask, and the process of forming the second insulating layer as a pattern involves attaching an opposing substrate to the first insulating layer using an adhesive layer. It can be done including.

The thickness of the second insulating layer before the process of etching the first insulating layer may be thicker than the thickness of the first insulating layer and the thickness of the second insulating layer after the process of etching the first insulating layer.

The present invention also includes a process of forming a device layer including a light emitting device and a wiring layer on a substrate; A process of forming a first passivation layer on the device layer; A process of pattern forming a second passivation layer on the first passivation layer; and a process of etching the first passivation layer using the second passivation layer as a mask, wherein the process of forming the first passivation layer includes forming the first passivation layer to cover the entire light emitting device and the wiring layer. and the process of etching the first passivation layer includes exposing the end region of the wiring layer.

The process of forming the first passivation layer may be performed using atomic layer deposition without a mask, and the process of forming the second passivation layer as a pattern may be performed using chemical vapor deposition using a mask.

The thickness of the second passivation layer before the process of etching the first passivation layer may be thicker than the thickness of the first passivation layer and the thickness of the second passivation layer after the process of etching the first passivation layer.

It further comprises a step of forming an additional passivation layer as a pattern on the first passivation layer before the step of patterning the second passivation layer and a step of pattern forming a particle cover layer on the additional passivation layer, 2 The passivation layer can be patterned on the particle cover layer.

The present invention also includes a process of forming a device layer including a light emitting device and a wiring layer on a substrate; A process of forming at least one passivation layer on the device layer; forming an adhesive layer on the at least one passivation layer and adhering a counter substrate on the adhesive layer; and a process of etching the at least one passivation layer using the counter substrate as a mask, wherein the process of forming the at least one passivation layer includes forming the at least one passivation layer to cover the entire light emitting device and the wiring layer. and the process of etching the at least one passivation layer includes exposing an end region of the wiring layer.

The process of forming the at least one passivation layer can be performed using atomic layer deposition or chemical vapor deposition without a mask.

The present invention also includes a first process of transferring the substrate into the chamber and placing it in the substrate holding unit; a second process of injecting a first etching gas into a remote plasma device connected to the chamber; a third process of dissociating the first etching gas in the remote plasma device; a fourth process of spraying the dissociated first etching gas onto the substrate 10; A fifth process of spraying a second etching gas onto the substrate from a gas injection unit connected to the chamber; and a sixth process of dissociating the second etching gas by applying plasma to the sprayed second etching gas. The present invention provides a substrate processing method for etching the thin film formed on the substrate.

The second process and the fifth process can be performed simultaneously.

The fourth process and the sixth process can be performed simultaneously.

After starting the second process, the fifth process may be started before the second process ends.

After starting the fourth process, the sixth process may be started before the fourth process ends.

After starting the fifth process, the second process may be started before the fifth process ends.

After starting the sixth process, the fourth process may be started before the sixth process ends.

At least one of the first etching gas and the second etching gas may include nitrogen trifluoride (NF ₃ ) gas.

The process temperature for etching the substrate may be 80°C to 100°C.

The step of etching the substrate may include physical etching and chemical etching simultaneously.

An inert gas may be injected into the chamber before the first etching gas is injected into the chamber.

The remote plasma device may include a plurality of devices arranged symmetrically from the center of the gas injection unit and sprayed through the gas injection unit.

The remote plasma device may include a plurality of injection holes disposed at different positions above the gas injection unit.

According to the present invention as described above, the following effects are achieved.

By improving the etching speed of the thin film, production can be increased, and by improving the etching speed, the elements inside the thin film can be prevented from being damaged.

1 is a diagram schematically showing a general substrate processing apparatus.
Figure 2 is a diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention.
Figure 3 is a diagram schematically showing a gas injection sequence in a substrate processing method according to an embodiment of the present invention.
Figure 4 is a diagram schematically showing a gas injection sequence in a substrate processing method according to another embodiment of the present invention.
Figure 5 is a diagram schematically showing a gas injection sequence in a substrate processing method according to another embodiment of the present invention.
Figure 6 is a flowchart showing a substrate processing method according to an embodiment of the present invention.
Figure 7 is a flowchart showing a substrate processing method according to another embodiment of the present invention.
Figure 8 is a flowchart showing a substrate processing method according to another embodiment of the present invention.
Figure 9 is a graph showing the results of the etching speed comparing the present invention with the prior art.
10 is a diagram schematically showing a substrate processing apparatus according to another embodiment of the present invention.
11 is a diagram schematically showing a substrate processing apparatus according to another embodiment of the present invention.
12A to 12C are cross-sectional process views showing a substrate processing method according to another embodiment of the present invention.
Figures 13a to 13d are cross-sectional process views showing a method of manufacturing an organic light-emitting device according to an embodiment of the present invention.
14A to 14D are cross-sectional process views showing a method of manufacturing an organic light-emitting device according to another embodiment of the present invention.

The advantages and features of the present invention and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various different forms. These embodiments only serve to ensure that the disclosure of the present invention is complete and that common knowledge in the technical field to which the present invention pertains is not limited. It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining embodiments of the present invention are illustrative, and the present invention is not limited to the matters shown. Like reference numerals refer to like elements throughout the specification. Additionally, in describing the present invention, if it is determined that a detailed description of related known technologies may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. When 'includes', 'has', 'consists of', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the plural is included unless specifically stated otherwise.

When interpreting a component, it is interpreted to include the margin of error even if there is no separate explicit description.

In the case of a description of a positional relationship, for example, if the positional relationship of two parts is described as 'on top', 'on the top', 'on the bottom', 'next to', etc., 'immediately' Alternatively, there may be one or more other parts placed between the two parts, unless 'directly' is used.

In the case of a description of a temporal relationship, for example, if a temporal relationship is described as 'after', 'successfully after', 'after', 'before', etc., 'immediately' or 'directly' Unless used, non-consecutive cases may also be included.

Although first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are merely used to distinguish one component from another. Accordingly, the first component mentioned below may also be the second component within the technical spirit of the present invention.

Each feature of the various embodiments of the present invention can be combined or combined with each other, partially or entirely, and various technological interconnections and operations are possible, and each embodiment can be implemented independently of each other or together in a related relationship. It may be possible.

Figure 2 is a diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention.

When described with reference to FIG. 2, the substrate processing apparatus includes a chamber 100; At least one substrate 10 disposed inside the chamber 100; a substrate placing unit 20 that forms plasma for depositing a thin film on the surface of the substrate 10 and places the substrate 10 thereon; a gas injection unit 30 facing the substrate placing unit 20 and spraying a first etching gas and a second etching gas; a remote plasma device 50 connected to the gas injection unit 30 and decomposing the first etching gas; a first etching gas supply unit 40 connected to the remote plasma device 50 to supply the first etching gas; It may include a second etching gas supply unit 60 that supplies the second etching gas; and an RF electrode 80 connected to the gas injection unit 30 and for forming plasma.

At least one of the substrates 10 may be disposed in the reaction space between the gas injection unit 30 and the substrate placing unit 20 . At this time, the at least one substrate 10 is one of a substrate (or wafer) for solar cell manufacturing, a semiconductor substrate (or wafer) for manufacturing semiconductor devices, a substrate (or glass substrate) for manufacturing flat panel displays, and an organic light emitting device (OLED) substrate. It can be. A thin film or device may already be formed on the substrate 10.

The gas injection unit 30 is provided with a first etching gas supplied from the first etching gas supply unit 40 and decomposed through the remote plasma device 50, and a first etching gas supplied from the second etching gas supply unit 60. The second etching gas may be supplied to the reaction space inside the chamber 100. At this time, the gas injection unit 30 may be configured to include a plurality of diffusion members in order to uniformly supply the first etching gas and the second etching gas into the chamber 100. For example, the gas injection unit 30 includes a first diffusion member (not shown) for primary diffusion of the gas supplied from outside the reaction space, and primary diffusion by the first diffusion member (not shown). It may be configured to include a second diffusion member (not shown) having a plurality of shower holes that secondarily diffuse the gas into the reaction space. Here, at least one of the first and second diffusion members may be rotated, but is not limited to this. The gas injection unit 30 may be connected to the remote plasma device 50. The gas injection unit 30 may be connected to the remote plasma device 50 to spray the first etching gas.

The gas injection unit 30 may be connected to the second etching gas supply unit 60. The gas injection unit 30 may be connected to the second etching gas supply unit 60 to spray the second etching gas.

The gas injection unit 30 may be disposed opposite to the substrate placing unit 20 . The gas injection unit 30 is disposed opposite to the substrate placing unit 20 and can spray the first etching gas decomposed from the remote plasma device 50 into the reaction space. The gas injection unit 30 may uniformly spray the first etching gas decomposed from the remote plasma device 50 into the reaction space. The gas injection unit 30 may spray the second etching gas supplied from the second etching gas supply unit 60 into the reaction space.

The substrate placing portion 20 may be disposed in the lower portion of the chamber 100 to face the gas injection portion 30 . The substrate placing unit 20 may place the plurality of substrates 10 . The substrate placing portion 20 may be connected to the ground electrode 70 . The substrate seating portion 20 may be used as an electrode to form plasma.

The first etching gas supply unit 40 may be connected to the remote plasma device 50. The first etching gas supply unit 40 may be connected to the remote plasma device 50 to supply first etching gas.

The remote plasma device 50 may be connected to the gas injection unit 30. The remote plasma device 50 is connected to the first etching gas supply unit 40 and can decompose the first etching gas supplied from the first etching gas supply unit 40 into plasma. The first etching gas decomposed from the remote plasma device 50 may be supplied into the reaction space of the chamber 100 and sprayed on the substrate 10 . The remote plasma device 50 may be connected to the waveguide 90. The first etching gas decomposed from the remote plasma device 50 may be supplied to the gas injection unit 30 through the waveguide 90.

The second etching gas supply unit 60 may be connected to the gas injection unit 30. The second etching gas supply unit 60 supplies the second etching gas, and the second etching gas may be injected into the reaction space through the gas injection unit 30. The second etching gas may be the same as the first etching gas, but is not limited thereto.

The ground electrode 70 may be connected to the substrate placing portion 20 . The ground electrode 70 is connected to the substrate placing portion 20 and can be used as an electrode to generate plasma.

The RF electrode 80 may be connected to the gas injection unit 30. The RF electrode 80 is electrically connected to the gas injection unit 30 and can supply high-frequency power to the gas injection unit 30.

The ground electrode 70 and the RF electrode 80 may be formed by changing their positions. That is, the ground electrode 70 may be connected to the gas injection unit 30, and the RF electrode 80 may be connected to the substrate placing unit 20.

In order to electrically insulate the back and side surfaces of the substrate seating portion 20, an insulating portion (not shown) may be disposed below the substrate seating portion 20. As such, the insulating portion (not shown) may be made of ceramic material or Teflon material to increase the density of plasma generated in the reaction space and prevent bottom discharge from occurring, and is preferably made of Teflon material. It is desirable. Here, the insulating part (not shown) made of Teflon has a higher dielectric constant compared to ceramic, so a high insulating effect can be expected with a low thickness (for example, 40 mm or less), and is not reactive to etching gas, so the substrate holding part (20) ) can be minimized.

The ground electrode 70 and the RF electrode 80 are formed so that a reactive ion etching reaction can be formed inside the chamber 100. As a reactive ion etching reaction is formed inside the chamber 100, the gas injected from the gas injection unit 30 is decomposed by plasma and accelerated to the substrate 10 on the substrate placing unit 20, thereby increasing the etching rate. may increase.

Figure 3 is a diagram schematically showing the gas injection sequence of a substrate processing method according to an embodiment of the present invention, and Figure 4 is a diagram schematically showing the gas injection sequence of a substrate processing method according to another embodiment of the present invention. Figure 5 is a diagram schematically showing a gas injection sequence in a substrate processing method according to another embodiment of the present invention.

3 to 5, the first etching gas is supplied to the remote plasma device 50, the remote plasma device 50 generates remote plasma, and the first etching gas is supplied to the remote plasma device 50. It may be dissociated by remote plasma generated in the plasma device 50. After the first etching gas is dissociated by remote plasma, it may be injected into the reaction space through the gas injection unit 30 to perform an etching process. The first etching gas supply process and the remote plasma generation process may be performed during the same period of time.

The second etching gas supplied from the second etching gas supply unit 60 may be injected into the reaction space through the gas injection unit 30. The second etching gas may be injected into the reaction space and dissociated by plasma within the chamber, and then an etching process may be performed. The process of supplying the second etching gas and the process of generating plasma within the chamber may be performed during the same period of time.

At this time, as shown in FIG. 3, the first etching gas supply process, the remote plasma generation process, the second etching gas supply process, and the plasma generation process within the chamber may be performed simultaneously during the same period. In the case of FIG. 3, the first etching gas and the second etching gas may be supplied simultaneously. In addition, in the case of FIG. 3, the process of forming plasma in the remote plasma device 50 and the process of forming plasma in the chamber for dissociating the second etching gas may be performed simultaneously.

Alternatively, as shown in FIG. 4, the first etching gas supply process and the remote plasma generation process are started simultaneously and performed for the same period, and the second etching gas supply process and the plasma generation process in the chamber are performed. The first etching gas supply process and the remote plasma generation process may start later, and the second etching gas supply process and the plasma generation process within the chamber may be performed during the same period. Therefore, in the case of FIG. 4, the second etching gas is injected before the injection of the first etching gas ends, so that etching by the first etching gas and the second etching gas can be performed simultaneously for a predetermined period of time. . Additionally, in the case of FIG. 4 , a chamber plasma that dissociates the second etching gas may be formed before plasma formation in the remote plasma device 50 is completed.

Alternatively, as shown in FIG. 5, the second etching gas supply process and the plasma generation process within the chamber are started simultaneously and performed for the same period, and the first etching gas supply process and the remote plasma generation process are performed. The second etching gas supply process and the plasma generation process within the chamber may be started later than the first etching gas supply process and the remote plasma generation process may be performed during the same period of time. In the case of FIG. 5, the first etching gas is injected before the injection of the second etching gas ends, and the first etching gas and the second etching gas may be injected simultaneously for a predetermined period of time. In addition, in the case of FIG. 5, plasma may be formed in the remote plasma device 50 before the plasma formation in the chamber applied to the second etching gas is terminated, so that plasma may be generated in the remote plasma device 50 for a predetermined period of time. Forming and forming a plasma in the chamber that dissociates the second etch gas may occur simultaneously.

The process of etching the substrate 10 may be performed repeatedly. The process of etching the substrate 10 may be performed repeatedly until the desired thickness can be etched.

Before the first and second etching gases are injected into the chamber 100, an inert gas may be injected into the chamber 100. The inert gas may include argon (Ar), helium (He), etc.

FIG. 6 is a flowchart showing a substrate processing method according to an embodiment of the present invention, FIG. 7 is a flowchart showing a substrate processing method according to another embodiment of the present invention, and FIG. 8 is a flowchart showing a substrate processing method according to another embodiment of the present invention. This is a flowchart showing the substrate processing method.

6 to 8 , the substrate processing method according to an embodiment of the present invention includes a first process of transporting the substrate 10 into the chamber 100 and placing it in the substrate placing unit 20; a second process of injecting a first etching gas into the remote plasma device 50 connected to the chamber 100; a third process of dissociating the first etching gas 200 from the remote plasma device 50; a fourth process of spraying the dissociated first etching gas onto the substrate 10; A fifth process of spraying a second etching gas 300 onto the substrate 10 from a gas injection unit 30 connected to the chamber 100; And a sixth process of dissociating the second etching gas by applying plasma to the sprayed second etching gas 300 may include etching the thin film formed on the substrate 10.

As shown in Figure 6, the second process, the third process, and the fourth process can be performed in order, and the fifth process and the sixth process can be performed in order. At this time, the second process and the fifth process may be performed simultaneously, and the fourth process and the sixth process may also be performed simultaneously.

As shown in FIG. 7, the second process, the third process, and the fourth process may be performed in order, and the fifth process and the sixth process may be performed in order. At this time, the fifth process may be started after starting the second process but before the second process ends, and the sixth process may be started after starting the fourth process but before the fourth process ends.

As shown in FIG. 8, the fifth process and the sixth process may be performed in order, and the second process, the third process, and the fourth process may be performed in that order. At this time, the second process may be started after starting the fifth process but before the fifth process ends, and the fourth process may be started after starting the sixth process but before the sixth process ends.

The first etching gas may include nitrogen trifluoride (NF ₃ ), but is not limited thereto, and may include a material having etching properties that can etch the thin film formed on the substrate 10. The second etching gas may include nitrogen trifluoride (NF ₃ ), and the second etching gas may include the same gas as the first etching gas. When the second etching gas includes the same gas as the first etching gas, the first etching gas and the second etching gas may be sprayed from the first etching gas supply unit 40.

The process temperature for etching the substrate 10 may be 80°C to 100°C. If the process temperature is 80°C or lower, the etch rate of the thin film formed on the substrate 10 may decrease, and if the process temperature is 100°C or higher, the temperature of the device formed on the substrate 10 may increase. Devices formed on the substrate 10 may be damaged.

The process of etching the substrate 10 may include physical etching and chemical etching simultaneously. The first etching gas dissociated through the remote plasma device 50 causes a chemical reaction with the thin film formed on the substrate 10, causing the thin film to separate from the substrate 10, thereby forming the thin film formed on the substrate 10. Thin films can be chemically etched. In addition, the speed at which the first etching gas and the second etching gas dissociated through the RF electrode 80 and the ground electrode 70 collide with the substrate 10 is improved to increase the collision speed on the substrate 10. Physical etching can be performed to etch the formed thin film.

The thin film deposited and etched on the substrate 10 may include, but is not limited to, silicon nitride (SiN _x ). When the thin film deposited and etched on the substrate 10 is silicon nitride (SiN _x ), etching may occur by reacting with the first etch gas 200 containing nitrogen trifluoride (NF ₃ ), Etching efficiency can be improved.

Figure 9 is a graph showing the results of the etching speed comparing the present invention with the prior art.

If explained with reference to FIG. 9, the etching rate when the etching process is performed using a conventional remote plasma and the etching rate when the etching process is performed according to the present invention can be compared. It can be seen that the etching speed of the present invention is improved by 33% to 35% compared to the conventional case. When the etching speed is improved according to the present invention, etching efficiency can be improved, and since the etching speed is improved, the temperature of the device formed on the substrate 10 increases, thereby reducing damage to the device.

10 and 11 are diagrams schematically showing a substrate processing apparatus according to another embodiment of the present invention.

When described with reference to FIGS. 10 and 11, a plurality of remote plasma devices 50 may be arranged symmetrically from the center of the gas injection unit 30 and injected through the gas injection unit 30. there is. When the remote plasma device 50 is symmetrically disposed from the center of the gas injection unit 30 and sprays through the gas injection unit 30, etch uniformity can be increased.

The remote plasma device 50 may include a plurality of injection holes disposed at different positions on the gas injection unit 30. When the remote plasma device 50 includes a plurality of injection holes disposed at different positions above the gas injection unit 30, etch uniformity can be increased.

12A to 12C are cross-sectional process views showing a substrate processing method according to another embodiment of the present invention.

First, as can be seen in FIG. 12A, a first insulating layer 210a is formed on the substrate 200.

The first insulating layer 210a is formed on the entire upper surface of the substrate 200 without a mask using an atomic layer deposition method such as plasma enhanced atomic layer deposition.

The first insulating layer 210a may be made of a silicon-based insulating material such as silicon nitride or silicon oxide.

The first insulating layer 210a is formed to have a first thickness t1.

Next, as can be seen in FIG. 12B, the second insulating layer 220 is patterned on the first insulating layer 210a.

The second insulating layer 220 is formed using a chemical vapor deposition method such as plasma enhanced chemical vapor deposition. The second insulating layer 220 is formed to have a predetermined pattern on the first insulating layer 210a using a mask pattern such as a shadow mask.

The second insulating layer 220 may be made of a silicon-based insulating material such as silicon nitride.

In some cases, the second insulating layer 220 may be made of an opposing substrate such as a transparent glass substrate. At this time, the counter substrate may be attached to the first insulating layer 210a using a predetermined transparent adhesive layer.

The second insulating layer 220 is laminated to have a second thickness t2. The second thickness t2 of the second insulating layer 220 is thicker than the first thickness t1 of the first insulating layer 210a.

Next, as can be seen in FIG. 12C, an etching process is performed on the first insulating layer 210a using the second insulating layer 220 as a mask. Then, a portion of the first insulating layer 210a that is not covered by the second insulating layer 220 is removed by an etching process, and is located under the second insulating layer 220 to form the second insulating layer 210a. The other portion of the first insulating layer 210a covered by the insulating layer 220 remains without being removed by the etching process, and the desired pattern of the first insulating layer 210 is obtained.

The first insulating layer 210 obtained through this etching process has the same pattern as the second insulating layer 220.

When performing the etching process, the upper surface of the second insulating layer 220, which serves as a mask, may also be etched. At this time, since the second thickness (t2) of the second insulating layer 220 is thicker than the first thickness (t1) of the first insulating layer (210a), a portion of the first insulating layer (210a) is etched. Even if completely removed, the second insulating layer 220 may not be completely removed and its thickness may be reduced. That is, the third thickness t3 of the second insulating layer 220 after the etching process may be thinner than the second thickness t2 of the second insulating layer 220 before the etching process.

However, it is not necessarily limited thereto, and if the second insulating layer 220 is made of a transparent glass substrate, the thickness of the second insulating layer 220 is not reduced by the etching process, and therefore, the second insulating layer 220 after the etching process is not limited to this. The third thickness t3 of the insulating layer 220 may be the same as the second thickness t2 of the second insulating layer 220 before the etching process.

The etching process can be performed through an etching process using the various substrate processing devices described above.

According to another embodiment of the present invention, the first insulating layer 210a deposited using atomic layer deposition is patterned using the second insulating layer 220 as a mask. There is an advantage in that the pattern of the first insulating layer 210 can be obtained without a separate shadow mask.

In order to obtain the first insulating layer 210 pattern, it is also possible to directly form the first insulating layer 210 pattern on the substrate 200 by atomic layer deposition using a shadow mask in the process of FIG. 12a described above. However, since the first insulating layer 210 pattern formed by the atomic layer deposition method has excellent step coverage characteristics, the first insulating layer 210 pattern can penetrate into the area under the shadow mask, so-called. There is a problem in that a precise first insulating layer 210 pattern cannot be obtained due to a shadow effect.

On the other hand, in another embodiment of the present invention, after forming the first insulating layer 210a on the entire upper surface of the substrate 200 without a mask as shown in FIG. 12A, the second insulating layer 210a is formed as shown in FIG. 12C described above. Since the first insulating layer 210a is patterned through an etching process using the insulating layer 220 pattern as a mask, the finally obtained first insulating layer 210 has a desired precise pattern. At this time, since the second insulating layer 220 is formed using a chemical vapor deposition method that does not have excellent step coverage characteristics, a shadow effect does not occur when forming the pattern of the second insulating layer 220 in the process of FIG. 12b, thereby ensuring precise manufacturing. Since a pattern of two insulating layers 220 can be obtained and the first insulating layer 210a is patterned through an etching process in the process of FIG. 12C using such a precise pattern of the second insulating layer 220 as a mask, The pattern of the obtained first insulating layer 210 is also precise. Even when the second insulating layer 220 is used as a transparent glass substrate, a similarly precise pattern of the first insulating layer 210 can be obtained.

Figures 13a to 13d are cross-sectional process views showing a method of manufacturing an organic light-emitting device according to an embodiment of the present invention.

First, as can be seen in FIG. 13A, a barrier layer 310 is formed on the substrate 300, and a device layer 400 is formed on the barrier layer 310.

The barrier layer 310 may be made of an inorganic insulating material such as SiO, SiN, or Al ₂ O ₃ . The barrier layer 310 may be formed by atomic layer deposition or chemical vapor deposition.

The device layer 400 includes a thin film transistor 410, a light emitting device 420, a wiring layer 430, and a protective layer 440.

The thin film transistor 410 includes a gate electrode, an active layer, a source electrode, and a drain electrode, and may be formed in various forms known in the art.

The light emitting device 420 is formed on the protective layer 440. The light emitting device 420 is connected to the thin film transistor 410 and is provided to emit a predetermined amount of light by driving the thin film transistor 410. For this purpose, the protective layer 440 is provided with a contact hole, and the light emitting device 420 can be connected to the thin film transistor 410 through the contact hole.

The light emitting device 420 includes an anode electrically connected to the thin film transistor 410, an organic light emitting layer provided on the anode electrode, and a cathode electrode provided on the organic light emitting layer.

The wiring layer 430 is connected to the thin film transistor 410. A predetermined signal may be applied to the thin film transistor 410 through the wiring layer 430. Since the wiring layer 430 is connected to an external circuit element, it may be formed to be exposed to the outside without being obscured by the protective layer 440.

The protective layer 440 is formed on the thin film transistor 410 to protect the thin film transistor 410. The protective layer 440 may be made of a silicon-based insulating material such as silicon oxide or silicon nitride.

Next, as can be seen in FIG. 13B, a first passivation layer 510a is formed on the device layer 400.

The first passivation layer 510a is formed on the entire upper surface of the substrate 300 without a mask using an atomic layer deposition method such as plasma enhanced atomic layer deposition. Accordingly, the first passivation layer 510a is formed on the device layer 400 and the barrier layer 310, and the wiring layer 430 is covered by the first passivation layer 510a.

The first passivation layer 510a may be made of a silicon-based insulating material such as silicon nitride or silicon oxide.

The first passivation layer 510a is formed to have a first thickness t1.

Next, as can be seen in FIG. 13C, a second passivation layer 520, a particle cover layer 600, and a third passivation layer 530 are sequentially formed on the first passivation layer 510a. do.

The second passivation layer 520 is formed in a predetermined pattern on the first passivation layer 510a. The second passivation layer 520 is formed using a chemical vapor deposition method such as plasma enhanced chemical vapor deposition. The second passivation layer 520 is formed to have a predetermined pattern on the first passivation layer 510a using a mask pattern such as a shadow mask. The second passivation layer 520 may be made of a silicon-based insulating material such as silicon nitride.

The second passivation layer 520 is laminated to have a second thickness t2. The second thickness t2 of the second passivation layer 520 is thicker than the first thickness t1 of the first passivation layer 510a.

The particle cover layer 600 is formed in a predetermined pattern on the second passivation layer 520. The particle cover layer 600 may be formed in the same pattern as the second passivation layer 520. The particle cover layer 600 may be formed through an inkjet process. The particle cover layer 600 may be made of an organic insulating material such as acrylic. The particle cover layer 600 serves to block particles that may be generated during the process of forming the first passivation layer 510a and the second passivation layer 520.

The particle cover layer 600 is laminated to have a third thickness t3. The third thickness t3 of the particle cover layer 600 is formed to be thicker than the first thickness t1 of the first passivation layer 510a.

The third passivation layer 530 is formed in a predetermined pattern on the particle cover layer 600. The third passivation layer 530 is formed using a chemical vapor deposition method such as plasma enhanced chemical vapor deposition. The third passivation layer 530 is formed to have a predetermined pattern on the particle cover layer 600 using a mask pattern such as a shadow mask. The third passivation layer 530 may be patterned to cover the top and side surfaces of the second passivation layer 520 and the particle cover layer 600. The third passivation layer 530 may be made of a silicon-based insulating material such as silicon nitride.

The third passivation layer 530 is formed to have a fourth thickness t4. The fourth thickness t4 of the third passivation layer 530 is thicker than the first thickness t1 of the first passivation layer 510a.

Meanwhile, the particle cover layer 600 may be omitted, and in that case, the third passivation layer 530 may also be omitted.

The second passivation layer 520, the particle cover layer 600, and the third passivation layer 530 are patterned so as not to obscure the end area of the wiring layer 430 constituting the device layer 400.

Next, as can be seen in FIG. 13D, an etching process is performed on the first passivation layer 510a using the third passivation layer 530 as a mask. Then, a portion of the first passivation layer 510a that is not covered by the third passivation layer 530 is removed by an etching process, and is located below the third passivation layer 530 to form the third passivation layer 530. The other portion of the first passivation layer 510a hidden by the passivation layer 530 remains without being removed by the etching process, thereby obtaining the desired pattern of the first passivation layer 510, and thus the wiring layer 430 The end area of is exposed to the outside. The end area of the wiring layer 430 exposed to the outside serves as a pad connected to an external circuit element.

When performing the etching process, the upper surface of the third passivation layer 530, which serves as a mask, may also be etched. At this time, since the fourth thickness t4 of the third passivation layer 530 is thicker than the first thickness t1 of the first passivation layer 510a, a portion of the first passivation layer 510a is etched. Even if it is completely removed, the third passivation layer 530 may not be completely removed and its thickness may be reduced. That is, the fifth thickness t5 of the third passivation layer 530 after the etching process may be thinner than the fourth thickness t4 of the third passivation layer 530 before the etching process.

The etching process can be performed through an etching process using the various substrate processing devices described above.

Like the embodiment according to FIGS. 12A to 12C described above, in the embodiment according to FIGS. 13A to 13D, the first passivation layer 510a deposited using an atomic layer deposition method is formed by forming the third passivation layer 530. By forming a pattern through an etching process using as a mask, a precise first passivation layer 510 pattern can be obtained without a separate shadow mask.

Meanwhile, when the particle cover layer 600 and the third passivation layer 530 are omitted in the above-described process of FIG. 13c, the second passivation layer 520 is used as a mask in the process of FIG. 13d. 1 By etching a portion of the passivation layer 510a, the desired first passivation layer 510 pattern can be obtained and the end region of the wiring layer 430 can be exposed to the outside. In this case, the thickness of the second passivation layer 520 after the etching process may be thinner than the second thickness t2 of the second passivation layer 520 before the etching process.

14A to 14D are cross-sectional process views showing a method of manufacturing an organic light-emitting device according to another embodiment of the present invention.

First, as can be seen in FIG. 14A, a barrier layer 310 is formed on the substrate 300, and a device layer 400 is formed on the barrier layer 310.

Since the process according to FIG. 14A is the same as the process according to FIG. 13A described above, repeated description will be omitted.

Next, as can be seen in FIG. 14B, a first passivation layer 510a, a second passivation layer 520a, a third passivation layer 530a, a fourth passivation layer 540a, and The fifth passivation layer 550a is sequentially formed.

Each of the first passivation layer 510a, the second passivation layer 520a, the third passivation layer 530a, the fourth passivation layer 540a, and the fifth passivation layer 550a is formed without a mask. It is formed on the entire upper surface of the substrate 300. Accordingly, the first to fifth passivation layers 510a, 520a, 530a, 540a, and 550a are formed on the device layer 400 and the barrier layer 310, and the first to fifth passivation layers 510a , 520a, 530a, 540a, 550a), the wiring layer 430 is covered.

The first to fifth passivation layers 510a, 520a, 530a, 540a, and 550a may be formed using an atomic layer deposition method such as plasma enhanced atomic layer deposition, but may be formed using a chemical vapor deposition method such as plasma enhanced chemical vapor deposition. It can also be formed.

The first to fifth passivation layers 510a, 520a, 530a, 540a, and 550a may be made of a silicon-based insulating material such as silicon nitride, silicon oxide, or silicon oxynitride.

The first to fifth passivation layers 510a, 520a, 530a, 540a, and 550a may be made of the same material or may be made of different materials.

Some of the first to fifth passivation layers 510a, 520a, 530a, 540a, and 550a may be omitted. That is, at least one layer among the second to fifth passivation layers 520a, 530a, 540a, and 550a may be omitted. Additionally, at least one passivation layer may be additionally formed on the fifth passivation layer 550a.

Next, as can be seen in FIG. 14C, an adhesive layer 700 is formed on the fifth passivation layer 550a and the opposing substrate 800 is adhered on the adhesive layer 700.

The adhesive layer 700 and the opposing substrate 800 are formed so as not to obscure the end area of the wiring layer 430 constituting the device layer 400.

The adhesive layer 700 may be made of a transparent adhesive material, and the counter substrate 800 may be made of transparent glass.

Next, as can be seen in FIG. 14D, an etching process is performed on the first to fifth passivation layers 510a, 520a, 530a, 540a, and 550a using the opposing substrate 800 as a mask.

Then, a portion of the first to fifth passivation layers 510a, 520a, 530a, 540a, and 550a that are not covered by the opposing substrate 800 is removed by an etching process, and the opposing substrate 800 Other portions of the first to fifth passivation layers 510a, 520a, 530a, 540a, and 550a located below and covered by the opposing substrate 800 remain without being removed by the etching process, thereby forming the desired first to fifth passivation layers 510a, 520a, 530a, 540a, and 550a. 5 A pattern of the passivation layers 510, 520, 530, 540, and 550 is obtained, and thus the end area of the wiring layer 430 is exposed to the outside. The end area of the wiring layer 430 exposed to the outside serves as a pad connected to an external circuit element.

The etching process can be performed through an etching process using the various substrate processing devices described above.

Although embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made without departing from the technical spirit of the present invention. . Accordingly, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but are for illustrative purposes, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, the embodiments described above should be understood in all respects as illustrative and not restrictive. The scope of protection of the present invention should be interpreted in accordance with the claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of rights of the present invention.

10: substrate 20: substrate holding portion
30: gas injection unit 40: first etching gas supply unit
50: remote plasma device 60: second etch gas supply unit
70: ground electrode 80: RF electrode
90: waveguide 100: chamber

Claims (12)

A process of forming a first insulating layer on the upper surface of the substrate;
A process of pattern forming a second insulating layer on the first insulating layer; and
A process of etching the first insulating layer using the second insulating layer as a mask,
A substrate processing method wherein the thickness of the second insulating layer before the process of etching the first insulating layer is greater than the thickness of the first insulating layer. According to paragraph 1,
The process of forming the first insulating layer is performed using atomic layer deposition without a mask,
A substrate processing method in which the process of patterning the second insulating layer is performed using a chemical vapor deposition method using a mask. According to paragraph 1,
The process of forming the first insulating layer is performed using atomic layer deposition without a mask,
A substrate processing method in which the process of patterning the second insulating layer includes attaching an opposing substrate to the first insulating layer using an adhesive layer. According to paragraph 2,
A substrate processing method wherein the thickness of the second insulating layer before the process of etching the first insulating layer is thicker than the thickness of the second insulating layer after the process of etching the first insulating layer. A process of forming a device layer including a light emitting device and a wiring layer on a substrate;
A process of forming a first passivation layer on the device layer;
A process of pattern forming a second passivation layer on the first passivation layer; and
It includes a process of etching the first passivation layer using the second passivation layer as a mask,
The process of forming the first passivation layer includes forming the first passivation layer to cover the entire light emitting device and the wiring layer,
The process of etching the first passivation layer includes exposing the end region of the wiring layer,
The thickness of the second passivation layer before the process of etching the first passivation layer is thicker than the thickness of the first passivation layer and the thickness of the second passivation layer after the process of etching the first passivation layer. Manufacturing method. According to clause 5,
The process of forming the first passivation layer is performed using atomic layer deposition without a mask,
A method of manufacturing an organic light-emitting device in which the process of patterning the second passivation layer is performed using a chemical vapor deposition method using a mask. According to clause 5,
Before the process of patterning the second passivation layer, it further includes a process of forming an additional passivation layer as a pattern on the first passivation layer and a process of forming a pattern of a particle cover layer on the additional passivation layer,
The second passivation layer is a method of manufacturing an organic light-emitting device in which a pattern is formed on the particle cover layer. A process of forming a device layer including a light emitting device and a wiring layer on a substrate;
A process of forming at least one passivation layer on the device layer;
forming an adhesive layer on the at least one passivation layer and adhering a counter substrate to the adhesive layer; and
A process of etching the at least one passivation layer using the opposing substrate as a mask,
The process of forming the at least one passivation layer includes forming the at least one passivation layer to cover the entire light emitting element and the wiring layer,
A method of manufacturing an organic light emitting device wherein the process of etching the at least one passivation layer includes exposing an end region of the wiring layer. According to clause 8,
A method of manufacturing an organic light-emitting device in which the process of forming the at least one passivation layer is performed using atomic layer deposition or chemical vapor deposition without a mask. According to paragraph 1,
The process of etching the first insulating layer is,
A first process of transporting the substrate into the chamber and placing it on the substrate holding unit;
a second process of injecting a first etching gas into a remote plasma device connected to the chamber;
a third process of dissociating the first etching gas in the remote plasma device;
a fourth process of spraying the dissociated first etching gas onto the substrate 10;
A fifth process of spraying a second etching gas onto the substrate from a gas injection unit connected to the chamber; and
A substrate processing method including a sixth process of dissociating the second etching gas by applying plasma to the sprayed second etching gas. According to clause 5,
The process of etching the first passivation layer is,
A first process of transporting the substrate into the chamber and placing it on the substrate holding unit;
a second process of injecting a first etching gas into a remote plasma device connected to the chamber;
a third process of dissociating the first etching gas in the remote plasma device;
a fourth process of spraying the dissociated first etching gas onto the substrate 10;
A fifth process of spraying a second etching gas onto the substrate from a gas injection unit connected to the chamber; and
A method of manufacturing an organic light emitting device comprising a sixth process of dissociating the second etching gas by applying plasma to the sprayed second etching gas. According to clause 8,
The process of etching the at least one passivation layer includes:
A first process of transporting the substrate into the chamber and placing it on the substrate holding unit;
a second process of injecting a first etching gas into a remote plasma device connected to the chamber;
a third process of dissociating the first etching gas in the remote plasma device;
a fourth process of spraying the dissociated first etching gas onto the substrate 10;
A fifth process of spraying a second etching gas onto the substrate from a gas injection unit connected to the chamber; and
A method of manufacturing an organic light emitting device comprising a sixth process of dissociating the second etching gas by applying plasma to the sprayed second etching gas.