KR20140037703A - Transition metal dichalcogenides device formed by re-crystallization and transistor device using the same - Google Patents
Transition metal dichalcogenides device formed by re-crystallization and transistor device using the same Download PDFInfo
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- 229910052723 transition metal Inorganic materials 0.000 title claims abstract description 58
- 238000001953 recrystallisation Methods 0.000 title claims abstract description 10
- 150000003624 transition metals Chemical class 0.000 title abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 27
- 239000013078 crystal Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract 6
- -1 transition metal chalcogenide Chemical class 0.000 claims description 47
- 239000002356 single layer Substances 0.000 claims description 19
- 230000007704 transition Effects 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 7
- 229910016001 MoSe Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000005224 laser annealing Methods 0.000 abstract description 16
- 238000000137 annealing Methods 0.000 abstract description 4
- 238000005137 deposition process Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 description 9
- 239000010410 layer Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000004770 chalcogenides Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000003377 silicon compounds Chemical class 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000011856 silicon-based particle Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001786 chalcogen compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000006250 one-dimensional material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
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Abstract
Description
본 발명은 재결정화된 전이금속 칼코겐화합물 소자 및 이를 이용한 트랜지스터 소자에 관한 것으로서, 보다 상세하게는 증착에 의해 형성되는 비결정질 전이금속 칼코겐화합물을 레이저 어닐링에 의해 단결정 또는 다결정으로 형성되도록 한 발명에 관한 것이다.The present invention relates to a recrystallized transition metal chalcogenide device and a transistor device using the same, and more particularly, to an amorphous transition metal chalcogenide compound formed by vapor deposition to be formed into a single crystal or polycrystal by laser annealing. It is about.
최근 차세대 디스플레이에 관한 연구로서 플렉시블 디스플레이, 투명 디스플레이, 3D 디스플레이 및 고해상도 디스플레이에 관한 연구가 매우 활발히 진행중에 있다. 이러한 차세대 디스플레이 구현을 위해 현재의 기술은 비결정질 실리콘(a-Si), LTPS(low temperature poly silicon) 박막형 필름을 채널물질로 사용한 TFT(thin film transistor)를 이용하지만 고온 증착시 플렉시블 기판의 기계적 변형에 의한 문제점이 있다. 또한, 구부러지는 동안 쉽게 깨지는 특성, 불투명성, 및 무엇보다도 가장 큰 단점인 물질의 이동도가 30cm2/Vsec 이하이므로 고해상도를 적용하기에 큰 한계성을 보이고 있었다.
Recently, research on flexible display, transparent display, 3D display, and high resolution display has been actively conducted as a research on next generation display. Current technology uses thin film transistor (TFT) using amorphous silicon (a-Si) and low temperature poly silicon (LTPS) thin film as channel material for realizing next-generation display, but it is effective in mechanical deformation of flexible substrate at high temperature deposition. There is a problem. In addition, because of the property of breaking easily during bending, opacity, and most of all, the material's mobility is 30 cm 2 / Vsec or less showed a big limitation to apply high resolution.
차세대 디스플레이에 대한 조건으로 종래의 실리콘은 투명하지 않고, 이동도가 상술한 바와 같이 30cm2/V·sec 이하이고, 기계적 안정성 즉, 구부러짐 동안 박막 타입인 실리콘은 쉽게 깨지는 현상이 발생되어 차세대 디스플레이에 대한 요건을 만족시키지 못하고 있다.
As a condition for the next generation display, the conventional silicon is not transparent, the mobility is 30 cm 2 / V · sec or less as described above, and the mechanical stability, that is, the thin film type silicon during the bending is easily broken, so Does not meet the requirements.
따라서, 실리콘이 갖지 못한 차세대 디스플레이에 대한 요건을 만족시키기 위해 고이동도, 고유연성, 및 고투과성을 보이는 반도체 채널물질의 개발이 필요되고 있었다.Accordingly, there has been a need for the development of semiconductor channel materials that exhibit high mobility, high flexibility, and high transparency in order to satisfy the requirements for the next generation display that silicon does not have.
따라서, 본 발명은 전술한 바와 같은 문제점을 해결하기 위하여 창출된 것으로서, 성장 조건에 따라 이동도가 낮게 형성 시 전자의 이동도 향상과 기판의 손상을 막기 위해 기존의 열처리를 대신하여 레이저 어닐링을 통해 순간적으로 비결정질 전이금속 칼코겐화합물을 단결정 또는 다결정질 물질로 재결정화하여 반도체 채널을 형성함으로써 이동도를 향상시키는 발명을 제공하는데 그 목적이 있다.Therefore, the present invention was created in order to solve the problems described above. When the mobility is low depending on the growth conditions, laser annealing is used instead of the conventional heat treatment to improve electron mobility and prevent damage to the substrate. An object of the present invention is to provide an invention for improving mobility by instantaneously recrystallizing an amorphous transition metal chalcogenide compound into a single crystal or polycrystalline material to form a semiconductor channel.
그러나, 본 발명의 목적들은 상기에 언급된 목적으로 제한되지 않으며, 언급되지 않은 또 다른 목적들은 아래의 기재로부터 당업자에게 명확하게 이해될 수 있을 것이다.However, the objects of the present invention are not limited to the above-mentioned objects, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.
전술한 본 발명의 목적은, 증착에 따른 비결정질 전이금속 칼코겐화합물을 어닐링에 의해 단결정 또는 다결정 전이금속 칼코겐화합물로 재결정화하여 반도체 채널물질을 형성하는 것을 특징으로 하는 재결정화된 전이금속 칼코겐화합물 소자를 제공함으로써 달성될 수 있다.The above-described object of the present invention is a recrystallized transition metal chalcogen characterized in that the amorphous transition metal chalcogenide according to the deposition is recrystallized into a single crystal or polycrystalline transition metal chalcogenide by annealing to form a semiconductor channel material. It can be achieved by providing a compound device.
또한, 재결정은 에너지 빔의 조사에 의해 이루어진다.In addition, recrystallization is made by irradiation of an energy beam.
또한, 전이금속 칼코겐화합물은, 단층 또는 다층으로 이루어진다.In addition, the transition metal chalcogenide compound consists of a single layer or multiple layers.
또한, 단층 전이금속 칼코겐화합물은 직접 천이 밴드갭에 의해 빛을 흡수하고, 다층 전이금속 칼코겐화합물은 간접 천이 밴드갭에 의해 빛을 흡수한다.In addition, the single-layer transition metal chalcogenide absorbs light by the direct transition bandgap, and the multilayer transition metal chalcogenide absorbs light by the indirect transition bandgap.
또한, 전이금속 칼코겐화합물은, MoS2, MoSe2, WSe2, MoTe2, 및 SnSe2 중 적어도 어느 하나의 화합물이다.The transition metal chalcogenide compound is at least one of MoS 2 , MoSe 2 , WSe 2 , MoTe 2 , and SnSe 2 .
또한, 다층 전이금속 칼코겐화합물은, 자외선에서 근적외선 영역까지의 파장을 흡수한다.
In addition, the multilayer transition metal chalcogenide absorbs wavelengths from the ultraviolet to the near infrared region.
한편, 본 발명의 목적은 게이트, 드레인, 소스로 형성되는 복수의 전극, 및On the other hand, an object of the present invention is a plurality of electrodes formed of a gate, a drain, a source, and
제 1 항에 따른 재결정화된 전이금속 칼코겐화합물 소자에 의해 드레인 및 소스 전극 사이에 형성된 반도체 채널을 포함하는 것을 특징으로 하는 재결정화된 전이금속 칼코겐화합물을 이용한 트랜지스터 소자를 제공함으로써 달성될 수 있다.It can be achieved by providing a transistor device using a recrystallized transition metal chalcogenide compound comprising a semiconductor channel formed between the drain and the source electrode by the recrystallized transition metal chalcogenide device according to claim 1. have.
전술한 바와 같은 본 발명에 의하면 레이저 어닐링에 의한 재결정화를 통해 비결정질 전이금속 칼코겐화합물이 단결정 또는 다결정질 물질로 결정화됨에 따라 산란이 줄어들어 전자의 이동도가 빨라지는 효과가 있다.According to the present invention as described above, as the amorphous transition metal chalcogenide crystallizes into a single crystal or a polycrystalline material through recrystallization by laser annealing, scattering is reduced and electron mobility is increased.
또한, 전이금속 칼코겐화합물에 의해 고투과성 및 고유연성을 구현함으로써 투명 디스플레이 또는 플렉시블 디스플레이에 사용될 수 있는 효과가 있다.In addition, by implementing a high permeability and high flexibility by the transition metal chalcogenide compound has an effect that can be used in a transparent display or a flexible display.
또한, 다층 전이금속 칼코겐화합물이 재결정화를 통해 다결정질 물질로 됨에 따라 실리콘 물질에 비해 이동도가 더욱 빨라지는 효과가 있다.In addition, as the multi-layered transition metal chalcogenide becomes a polycrystalline material through recrystallization, mobility of the multilayer transition metal chalcogen compound is faster than that of the silicon material.
또한, 전자의 이동도가 빨라짐에 따라 전력소모가 작고 소자의 크기를 줄일 수 있는 효과가 있다.In addition, as the mobility of electrons increases, power consumption is small and the size of the device can be reduced.
본 명세서에 첨부되는 다음의 도면들은 본 발명의 바람직한 일실시예를 예시하는 것이며, 발명의 상세한 설명과 함께 본 발명의 기술적 사상을 더욱 이해시키는 역할을 하는 것이므로, 본 발명은 그러한 도면에 기재된 사항에만 한정되어 해석 되어서는 아니 된다.
도 1은 단층 MoS2의 삼차원적 구조를 나타낸 도면이고,
도 2는 단층 MoS2 트랜지스터의 삼차원적 도면이고
도 3은 서로 다른 두께를 가지는 MoS2 결정의 흡수 스펙트럼 도면이고,
도 4는 벌크 MoS2의 밴드 구조를 나타낸 도면이고,
도 5는 직접 천이 밴드갭의 E-k 도면이고
도 6은 간접 천이 밴드갭의 E-k 도면이고
도 7은 MoS2 포토트랜지스터의 Id-Vgs 특성곡선이다.
도 8은 세 종류의 고체를 도시한 도면이고,
도 9는 엑시머 레이저 빔이 전이금속 칼코겐화합물에 조사되는 도면이고,
도 10은 레이저 빔의 조사에 의해 비결정질 물질이 다결정질 물질로 재결정화되어 그레인 바운드리가 넓어진 도면이고,
도 11, 도 12, 도 13은 레이저 빔의 조사 전/후를 나타낸 특성곡선이다.BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate preferred embodiments of the invention and, together with the description, serve to further the understanding of the technical idea of the invention, It should not be construed as limited.
1 is a view showing a three-dimensional structure of a single layer MoS 2 ,
2 is a three-dimensional view of a single layer MoS 2 transistor
3 is an absorption spectrum diagram of MoS 2 crystals having different thicknesses,
4 is a view showing the band structure of the bulk MoS 2 ,
5 is an Ek diagram of a direct transition bandgap
6 is an Ek diagram of an indirect transition bandgap.
7 is an Id-Vgs characteristic curve of a MoS 2 phototransistor.
8 shows three kinds of solids,
9 is a diagram in which an excimer laser beam is irradiated to a transition metal chalcogenide compound,
10 is a view in which the grain boundary is widened by recrystallizing an amorphous material into a polycrystalline material by irradiation of a laser beam,
11, 12, and 13 are characteristic curves showing before and after irradiation of a laser beam.
이하, 도면을 참조하여 본 발명의 바람직한 일실시예에 대해서 설명한다. 또한, 이하에 설명하는 일실시예는 특허청구범위에 기재된 본 발명의 내용을 부당하게 한정하지 않으며, 본 실시 형태에서 설명되는 구성 전체가 본 발명의 해결 수단으로서 필수적이라고는 할 수 없다.
Hereinafter, a preferred embodiment of the present invention will be described with reference to the drawings. In addition, the embodiment described below does not unduly limit the content of the present invention described in the claims, and the entire structure described in this embodiment is not necessarily essential as the solution means of the present invention.
<재결정화된 전이금속 Recrystallized transition metal
칼코겐화합물Chalcogenide
소자의 구성> Device Configuration>
2차원 물질은 일차원 물질과 비교했을 때 복잡한 구조를 제조하기가 상대적으로 쉬어 차세대 나노전자소자의 물질로 이용하기에 적합하다. 이러한 2차원 물질 중 2차원 전이금속 칼코겐화합물(2D Transition Metal Dichalcogenides)은 판상구조를 갖으며 MoS2, MoSe2, WSe2, MoTe2, 또는 SnSe2의 화합물로 이루어진다.
Compared with one-dimensional materials, two-dimensional materials are relatively easy to manufacture complex structures, making them suitable for use as materials for next-generation nanoelectronic devices. Of these two-dimensional materials, 2D transition metal dichalcogenides have a plate-like structure and are formed of MoS 2 , MoSe 2 , WSe 2 , MoTe 2 , or SnSe 2 . It consists of a compound.
(단층 전이금속 (Single layer transition metal
칼코겐화합물과Chalcogen Compounds
다층 전이금속 Multilayer transition metal
칼코겐화합물의Chalcogenide
차이점) difference)
이 중에서 단층 MoS2의 구조 및 단층 MoS2를 이용한 트랜지스터는 도 1 및 도 2에 도시된 바와 같다. 도 1에 도시된 바와 같이 단층 MoS2 결정은 수직적으로 쌓여있는 구조이고 단층(single layer)의 두께는 6.5Å으로 반더발스(van der Waals) 상호작용으로부터 층을 형성하고 있다.
Among them, a transistor using a single-layer structure, and MoS 2, MoS 2, a single layer is shown in Figs. As shown in FIG. 1, the monolayer MoS 2 crystals are vertically stacked, and the single layer has a thickness of 6.5 Å to form a layer from van der Waals interaction.
단층 전이금속 칼코겐화합물인 MoS2는 1.8eV의 고유 밴드갭을 가지며 물질 고유의 이동성(mobility)은 0.5 ~ 3cm2V-1s-1이다. 상술한 단층 MoS2는 도 3의 T2, T3 그래프와 같이 약 700nm 아래의 파장을 흡수할 수 있다. 도 3에 도시된 T1, T2, T3는 MoS2 결정의 두께를 나타내며, 두께는 T1 > T2 > T3 순으로서 T1은 약 40nm, T2는 약 4nm, T3는 약 1nm이다.
MoS 2 , a monolayer transition metal chalcogenide, has an intrinsic bandgap of 1.8 eV and inherent mobility of 0.5 to 3 cm 2 V −1 s −1 . The single layer MoS 2 described above can absorb wavelengths below about 700 nm as shown in the T2 and T3 graphs of FIG. 3. T1, T2 and T3 shown in Figure 3 is MoS 2 The thickness of the crystal is shown in the order of T1>T2> T3, T1 is about 40 nm, T2 is about 4 nm, and T3 is about 1 nm.
도 3 및 도 4에 도시된 흡수 최고점 "A", "B"는 가전자 밴드(valance band) 스핀-궤도 결합으로부터 에너지 분리된 직접 천이 밴드갭에 상응하며, 꼬리 "I"는 간접 천이 밴드갭에 상응한다.
The absorption peaks “A” and “B” shown in FIGS. 3 and 4 correspond to direct transition bandgaps which are energy separated from the valence band spin-orbit coupling, and tail “I” corresponds to the indirect transition bandgap. Corresponds to
한편, 도 5에 도시된 바와 같이 직접 천이 밴드갭은 가전자대의 에너지 Ev(k)가 전도대의 에너지 Ec(k)와 같은 파수 k로 발생하는 경우이고, 도 6에 도시된 바와 같이 위의 두 에너지가 다른 파수 값에서 생기는 것을 간접 천이 밴드갭이라 한다. 직접 천이 밴드갭은 광 방사 에너지 
Meanwhile, as illustrated in FIG. 5, the direct transition band gap is a case where the energy E v (k) of the valence band occurs at a wave number k equal to the energy E c (k) of the conduction band, and as shown in FIG. 6. It is called indirect transition bandgap that the two energies of are generated at different frequency values. Direct transition bandgap is light emission energy
따라서, 직접 천이 밴드갭에서의 
Therefore, in the direct transition bandgap
에너지 갭이 1.8eV에서 1.35eV로 낮아지는 경우에는 다음의 수학식 1에 의해 파장 값이 변하게 된다.
When the energy gap is lowered from 1.8eV to 1.35eV, the wavelength value is changed by Equation 1 below.
에너지 갭이 1.8eV인 경우보다 1.35eV인 경우, 즉 스몰 밴드갭(small bandgap)인 경우에 파장(
If the energy gap is 1.35 eV rather than 1.8 eV, i.e. small bandgap, the wavelength (
단층 MoS2의 경우에는 일반적으로 700nm 아래의 파장을 흡수할 수 있으나, 본 발명에 따른 다층 MoS2(바람직하게는 3층 이상)의 경우에는 1000nm 아래의 모든 파장을 흡수할 수 있다. 이는 근적외선(near IR)에서부터 자외선(ultra violet)까지의 파장대를 감지할 수 있음을 의미한다.
In the case of a single layer MoS 2 it can generally absorb a wavelength below 700nm, in the case of a multi-layer MoS 2 (preferably three or more layers) according to the present invention can absorb all wavelengths below 1000nm. This means that the wavelength range from near IR to ultra violet can be detected.
단층 또는 다층 전이금속 칼코겐화합물 소자는 도 7에 도시된 바와 같이 빛이 입사되지 않을 때와 빛이 입사될 때(633nm의 50mWcm-2 강도)의 Id가 약 103 차이가 남을 알 수 있으며 이에 의해 스위칭 소자로 사용될 수 있다.
In the single- or multi-layered transition metal chalcogenide device, as shown in FIG. 7, when the light is not incident and when the light is incident (intensity of
상술한 단층 또는 다층 전이금속 칼코겐화합물은 화학기상증착(CVD), PE-CVD, 원자층 증착(ALD), 또는 스퍼터(sputter) 등의 종래의 일반적인 증착방식을 이용하여 증착되므로 대면적 증착이 용이하다.
The above-described single layer or multilayer transition metal chalcogenide compound is deposited by using a conventional general deposition method such as chemical vapor deposition (CVD), PE-CVD, atomic layer deposition (ALD), or sputtering. It is easy.
(단결정 또는 (Single crystal or
다결정Polycrystalline
다층 전이금속 Multilayer transition metal
칼코겐화합물Chalcogenide
소자) device)
일반적으로 반도체에 사용되는 고체는 단결정, 다결정, 비정질 이 세가지로 나눌 수 있다. 결정이라함은 분자의 규칙적인 배열이라고 정의되며 이 규칙적인 배열이 고체 전체에 균일하게 이루어져 있으면 단결정(결정질, Crystalline)이라고 하고, 부분적으로는 결정을 이루지만 전체적으로는 하나의 균일한 결정이 아닌 경우를 다결정(다결정질, Poly Crystal)이라 한다. 한편, 비정질(Amorphous, 비결정질)은 고체이지만 분자가 무작위로 배열되어 규칙이 없는 경우를 말한다. 이러한 예가 도 8에 단결정(10), 다결정(20), 비정질(30)로 나타나있다.
Generally, solids used in semiconductors can be classified into three types: monocrystalline, polycrystalline, and amorphous. Crystals are defined as regular arrays of molecules, and when these regular arrays are homogeneous throughout the solid, they are called single crystals (crystalline, crystalline), and they form crystals in part but not as a single uniform crystal as a whole. Is called polycrystalline (polycrystalline). On the other hand, amorphous (amorphous) is a case in which there are no rules due to random arrangement of molecules. An example of this is shown in FIG. 8 as
이때, 결정질은 한 개의 그레인(grain)으로 이루어진 물질이고, 다결정질은 여러 개의 그레인으로 이루어진 물질로 각 그레인마다 결정 방향이 다르다. 비정질은 도 8에 도시된 바와 같이 분자가 무작위로 배열되어 있고, 중간 중간의 불순물 성분 때문에 산란(scattering)이 발생되어 전자 이동이 더디다. 따라서 비정질을 이용하여 반도체 채널을 형성하는 경우 이동도가 좋지 않다.
At this time, the crystalline is a material consisting of one grain (grain), the polycrystalline material is made of a plurality of grains, the crystal direction is different for each grain. In amorphous, molecules are randomly arranged as shown in FIG. 8, and scattering occurs due to an intermediate impurity component, resulting in slow electron transfer. Therefore, in the case of forming the semiconductor channel using amorphous, the mobility is not good.
여기서, 단층 또는 다층 전이금속 칼코겐화합물의 일반적인 대면적 성장은 앞서 설명한 증착방식과 동일하게 스퍼터링, ALD, CVD 등의 방식을 택하여 증착한다. 그러나 이렇게 증착이 되면 비결정질로 증착이 되어서 전이금속 칼코겐화합물이 실질적으로 가지고 있는 고유의 이동도를 구현할 수 없게 된다.
Here, the general large area growth of the single- or multi-layered transition metal chalcogenide compound is deposited by sputtering, ALD, CVD, etc. in the same manner as the deposition method described above. However, if the deposition is made in such a way that the deposition is amorphous, it is impossible to realize the inherent mobility of the transition metal chalcogenide substantially.
따라서, 본 발명에서는 이러한 물질의 이동도 향상과 기판상의 손상을 막기 위해 기존의 열처리를 대신하여 팸토세컨 레이저 어닐링을 통해 순간적으로 비결정질 물질을 단결정 또는 다결정질 물질로 재결정화하여 물질의 이동도를 향상시킨다. 레이저 어닐링은 채널물질의 결정화를 도울 뿐만 아니라, 반도체-도체의 접합부분에서도 적용하여 접촉저항(contact resistance)를 낮춤으로써 전기적 전도도를 향상시킬 수도 있다.
Therefore, in the present invention, in order to improve the mobility of the material and to prevent damage on the substrate, instead of the conventional heat treatment, instantaneous recrystallization of the amorphous material into a single or polycrystalline material through femtosecond laser annealing to improve the mobility of the material. Let's do it. Laser annealing not only helps to crystallize the channel material but can also be applied at the junction of the semiconductor-conductor to improve the electrical conductivity by lowering the contact resistance.
도 9에 도시된 바와 같이 본 발명에 따른 레이저 어닐링은 엑시머 레이저 어닐링으로서 기판(40) 위에 증착된 물질(5, 일예로 단층 또는 다층 전이금속 칼코겐화합물)에 레이저 빔(60)을 조사하여 비결정질 물질을 단결정 또는 다결정질 물질로 재결정화한다. 재결정화된 단층 또는 다층 전이금속 칼코겐화합물은 도 10에 도시된 바와 같이 비결정질(30)에서 다결정질(20)로 재결정화되어 그레인 바운드리(grain boundary)가 넓어져서 산란이 방지되어 이동도가 증가한다. 또한, 엑시머 레이저 어닐링에 의해 다층 전이금속 칼코겐화합물과 소스/드레인 전극의 접합부분의 접합저항을 향상시킴으로 이동도가 빨라지게 된다.
As shown in FIG. 9, the laser annealing according to the present invention is an excimer laser annealing that irradiates a
상술한 바와 같이, 본 발명에서는 팸토세컨 레이저 어닐링을 통해 기판의 기계적 손상없이 전이금속 칼코겐화합물을 재결정화하여 반도체 채널물질을 형성한다. 특히, 다층 전이금속 칼코겐화합물의 경우에는 스퍼터링에 의한 비결정질 증착에 의해 물질 고유의 이동도가 줄어드는 문제점을 레이저 어닐링을 통한 재결정화에 의해 이동도를 150cm2/V·sec로 향상시킬 수 있다. 이러한 전이금속 칼코겐화합물의 재결정화에 따른 이동도는 앞서 설명한 실리콘에 의한 이동도에 비해 우수함을 알 수 있다.
As described above, in the present invention, the semiconductor metal material is formed by recrystallizing the transition metal chalcogenide compound without mechanical damage to the substrate through femtosecond laser annealing. In particular, in the case of a multi-layered transition metal chalcogenide, the mobility inherent in the material is reduced by amorphous deposition by sputtering, and the mobility may be improved to 150 cm 2 / V · sec by recrystallization through laser annealing. It can be seen that the mobility due to the recrystallization of the transition metal chalcogenide compound is superior to the mobility due to the silicon described above.
도 11에 도시된 바와 같이 레이저 어닐링 전/후에 따라 드레인 전류가 변화되어 이동도가 향상됨을 알 수 있다. 또한, 도 12는 레이저 어닐링 전이며, 도 13은 레이저 어닐링 후로서 레이저 어닐링 전/후에 따라 비결정질 전이금속 칼코겐화합물이 단결정 또는 다결정 전이금속 칼코겐화합물로 재결정화되어 드레인 전류가 더욱 증가함을 알 수 있다.
As shown in FIG. 11, it can be seen that drain current is changed according to before and after laser annealing, thereby improving mobility. 12 shows that before the laser annealing, and FIG. 13 shows that after the laser annealing, before and after the laser annealing, the amorphous transition metal chalcogenide is recrystallized into a single crystal or a polycrystalline transition metal chalcogenide to increase the drain current. Can be.
(재결정화된 전이금속 (Recrystallized transition metal
칼코겐화합물을Chalcogenide
이용한 트랜지스터 소자) Transistor element)
도 2에 도시된 바와 같이 드레인 및 소스 전극 사이에 상술한 재결정화된 전이금속 칼코겐화합물을 이용하여 채널물질을 형성함으로써 차세대 디스플레이에 적합한 TFT를 구성할 수 있다.
As shown in FIG. 2, a channel material is formed using the above-described recrystallized transition metal chalcogen compound between the drain and source electrodes, thereby forming a TFT suitable for a next generation display.
상술한 게이트, 드레인, 및 소스 전극을 투명 전극으로 구성하는 경우에는 고투과성을 지닌 투명 디스플레이를 구현할 수 있다.
When the gate, drain, and source electrodes described above are configured as transparent electrodes, a transparent display having high transparency can be implemented.
이상, 본 발명의 일실시예를 참조하여 설명했지만, 본 발명이 이것에 한정되지는 않으며, 다양한 변형 및 응용이 가능하다. 즉, 본 발명의 요지를 일탈하지 않는 범위에서 많은 변형이 가능한 것을 당업자는 용이하게 이해할 수 있을 것이다.Although the present invention has been described with reference to the embodiment thereof, the present invention is not limited thereto, and various modifications and applications are possible. In other words, those skilled in the art can easily understand that many variations are possible without departing from the gist of the present invention.
1 : 단층 MoS2 트랜지스터
10 : 단결정
20 : 다결정
30 : 비정질(비결정질)
40 : 기판
50 : 증착물질
60 : 레이저 빔1: single layer MoS 2 transistor
10: single crystal
20 polycrystalline
30: amorphous (amorphous)
40: substrate
50: deposition material
60: laser beam
Claims (7)
A recrystallized transition metal chalcogenide device, characterized in that a semiconductor channel material is formed by recrystallization of an amorphous transition metal chalcogenide compound by deposition into a single crystal or polycrystalline transition metal chalcogenide compound.
상기 재결정은 에너지 빔의 조사에 의해 이루어지는 것을 특징으로 하는 재결정화된 전이금속 칼코겐화합물 소자.
The method of claim 1,
The recrystallization is a recrystallized transition metal chalcogenide device, characterized in that by the irradiation of the energy beam.
상기 전이금속 칼코겐화합물은,
단층 또는 다층으로 이루어지는 것을 특징으로 하는 재결정화된 전이금속 칼코겐화합물 소자.
The method of claim 1,
The transition metal chalcogenide compound,
A recrystallized transition metal chalcogenide device, comprising a single layer or multiple layers.
단층 전이금속 칼코겐화합물은 직접 천이 밴드갭에 의해 빛을 흡수하고,
다층 전이금속 칼코겐화합물은 간접 천이 밴드갭에 의해 빛을 흡수하는 것을 특징으로 하는 재결정화된 전이금속 칼코겐화합물 소자.
The method of claim 3, wherein
Monolayer transition metal chalcogenides absorb light directly by the transition bandgap,
A multi-layered transition metal chalcogenide compound absorbs light by an indirect transition bandgap.
상기 전이금속 칼코겐화합물은,
MoS2, MoSe2, WSe2, MoTe2, 및 SnSe2 중 적어도 어느 하나의 화합물인 것을 특징으로 하는 재결정화된 전이금속 칼코겐화합물 소자.
The method of claim 1,
The transition metal chalcogenide compound,
A recrystallized transition metal chalcogenide device, characterized in that the compound is at least one of MoS 2 , MoSe 2 , WSe 2 , MoTe 2 , and SnSe 2 .
상기 다층 전이금속 칼코겐화합물은,
자외선에서 근적외선 영역까지의 파장을 흡수할 수 있는 것을 특징으로 하는 다결정 다층 전이금속 칼코겐화합물 소자.
5. The method of claim 4,
The multilayer transition metal chalcogenide compound,
A polycrystalline multilayer transition metal chalcogenide device, which can absorb wavelengths from the ultraviolet to the near infrared region.
제 1 항에 따른 재결정화된 전이금속 칼코겐화합물 소자에 의해 드레인 및 소스 전극 사이에 형성된 반도체 채널을 포함하는 것을 특징으로 하는 재결정화된 전이금속 칼코겐화합물을 이용한 트랜지스터 소자.A plurality of electrodes formed of a gate, a drain, a source, and
A transistor device using a recrystallized transition metal chalcogenide compound comprising a semiconductor channel formed between a drain and a source electrode by the recrystallized transition metal chalcogenide device according to claim 1.
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