KR20140029779A - Method for manufacturing graphene and the graphene manufactured by the same - Google Patents

Method for manufacturing graphene and the graphene manufactured by the same Download PDF

Info

Publication number
KR20140029779A
KR20140029779A KR1020120095418A KR20120095418A KR20140029779A KR 20140029779 A KR20140029779 A KR 20140029779A KR 1020120095418 A KR1020120095418 A KR 1020120095418A KR 20120095418 A KR20120095418 A KR 20120095418A KR 20140029779 A KR20140029779 A KR 20140029779A
Authority
KR
South Korea
Prior art keywords
layer
graphene
protective layer
graphene layer
substrate
Prior art date
Application number
KR1020120095418A
Other languages
Korean (ko)
Inventor
정명희
박원배
노종현
문진산
Original Assignee
엘지전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지전자 주식회사 filed Critical 엘지전자 주식회사
Priority to KR1020120095418A priority Critical patent/KR20140029779A/en
Publication of KR20140029779A publication Critical patent/KR20140029779A/en

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

The present invention relates to graphene, and more particularly, to a method for producing graphene and a graphene thereof. The present invention provides a method of manufacturing a semiconductor device, comprising: forming a graphene layer on a catalytic metal layer; Forming a protective layer on the graphene layer; Positioning a support layer on the protective layer; Removing the catalytic metal layer; Positioning a substrate on the graphene layer; And removing the support layer.

Description

TECHNICAL FIELD The present invention relates to a method for manufacturing graphene,

The present invention relates to graphene, and more particularly, to a method for producing graphene and a graphene thereof.

As materials composed of carbon atoms, fullerene, carbon nanotube, graphene, graphite and the like exist. Among them, graphene is a structure in which carbon atoms are composed of one layer on a two-dimensional plane.

In particular, graphene is not only very stable and excellent in electrical, mechanical and chemical properties, but it is also a good conductive material that can move electrons much faster than silicon and can carry much larger currents than copper, It has been proved through experiments that a method of separation has been discovered.

Such graphene can be formed in a large area and has electrical, mechanical and chemical stability as well as excellent conductivity, and thus is attracting attention as a basic material for electronic circuits.

In addition, since graphenes generally have electrical characteristics that vary depending on the crystal orientation of graphene of a given thickness, the user can express the electrical characteristics in the selected direction and thus design the device easily. Therefore, graphene can be effectively used for carbon-based electric or electromagnetic devices.

SUMMARY OF THE INVENTION The present invention provides a method for preparing graphene which can protect or improve the properties of graphene in the process of transferring and applying graphene, and a graphene.

According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a graphene layer on a catalytic metal layer; Forming a protective layer on the graphene layer; Positioning a support layer on the protective layer; Removing the catalytic metal layer; Positioning a substrate on the graphene layer; And removing the support layer.

Here, the protective layer may contain a resin or a polymer.

In addition, the protective layer may include any one of PMMA, PC, COC, and fluorinated polymer.

This protective layer may be directly formed on the graphene layer.

Here, the support layer may include a heat transfer film or a light transfer film.

The substrate may include a semiconductor substrate or a transparent substrate containing PET.

Here, the step of removing the support layer may be removed by applying heat or light.

Further, graphene obtained by the above-described production method can be provided.

The present invention has the following effects.

First, the protective layer may serve to protect the graphene layer in the process of transferring the graphene layer to the substrate and subsequent processes.

When the protective layer is provided, heat or impact generated during the transfer process may not be transferred to the graphene layer, and the graphene layer may be protected from the residual material of the support layer, thereby improving the characteristics of the final graphene layer. It can be improved.

That is, the graphene layer is positioned on the substrate in a state where the graphene layer is protected by the protective layer, so that the graphene layer can be stably transferred without any complicated process in the process of manufacturing the graphene layer to be used in various electronic devices and devices. will be.

In addition, when the graphene layer is electrically connected to the electronic device or used as an electrode or an auxiliary electrode, the protective layer may be removed immediately before such a process, thereby providing maximum protection for the graphene layer. .

1 is a flowchart showing an example of a graphene manufacturing method.
2 is a cross-sectional view showing an example in which a graphene layer is formed on a catalytic metal layer.
3 is a schematic view showing an example of an apparatus for forming a graphene layer.
4 is a cross-sectional view showing an example in which a graphene layer is formed on one surface of a catalyst metal layer.
5 is a cross-sectional view illustrating an example in which a protective layer is formed on a graphene layer.
6 is a cross-sectional view illustrating an example in which a support layer is positioned on a protective layer.
7 is a cross-sectional view showing an example of a state in which the catalyst metal layer is removed.
8 is a cross-sectional view illustrating an example of placing a substrate on a graphene layer.
9 is a cross-sectional view showing an example of removing the support layer.
10 is a cross-sectional view illustrating an example in which a protective layer is removed.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. Rather, the intention is not to limit the invention to the particular forms disclosed, but rather, the invention includes all modifications, equivalents and substitutions that are consistent with the spirit of the invention as defined by the claims.

It will be appreciated that when an element such as a layer, region or substrate is referred to as being present on another element "on," it may be directly on the other element or there may be an intermediate element in between .

Although the terms first, second, etc. may be used to describe various elements, components, regions, layers and / or regions, such elements, components, regions, layers and / And should not be limited by these terms.

1 is a flowchart showing an example of a graphene manufacturing method. Hereinafter, Fig. 1 and corresponding reference drawings will be described together.

As shown in Figs. 1 and 2, a graphene layer 20 is formed on the catalytic metal layer 10 as an example of graphene formation (S10).

The catalyst metal layer 10 may be formed of a metal such as Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, And may be used as a single layer of any one of them, or as an alloy of at least two of them.

Methods for forming the graphene layer 20 include thermal-chemical vapor deposition (CVD), inductively coupled plasma chemical vapor deposition (ICP-CVD), plasma chemical vapor deposition (PE-CVD) And various other methods such as rapid thermal annealing (RTA), atomic layer deposition (ALD), and physical vapor deposition (PVD) may be used.

3 shows an example in which the graphene layer 20 is formed on the catalyst metal layer 10 by chemical vapor deposition (CVD).

This chemical vapor deposition method is a method of growing the graphene layer 20 by placing the catalyst metal layer 10 in the chamber 200, introducing a carbon source, and providing suitable growth conditions.

Examples of the carbon source include a gas such as methane (CH 4 ), acetylene (C 2 H 2 ), etc., and a solid form such as powder or polymer and a liquid such as bubbling alcohol It is possible.

In addition, various carbon sources such as ethane, ethylene, ethanol, acetylene, propane, butane, butadiene, pentane, pentene, cyclopentadiene, hexane, cyclohexane, benzene, toluene,

Hereinafter, examples in which copper (Cu) is used as the catalyst metal layer 10 and methane (CH 4 ) is used as the carbon source is described.

When methane gas is introduced into the hydrogen atmosphere while maintaining a proper temperature on the catalyst metal layer 10, the hydrogen reacts with methane to form the graphene layer 20 on the catalyst metal layer 10. The formation of the graphene layer 20 may be performed at a temperature of approximately 300 to 1500 ° C.

At this time, if there is no space on the lower surface of the catalytic metal layer 10, the graphene layer 20 may be formed only on the upper surface of the catalytic metal layer 10. However, if there is a space on the lower surface of the catalytic metal layer 10, 2, the graphene layer 20 may be formed on both sides of the catalytic metal layer 10. [

As the catalytic metal layer 10, copper has a low solubility in carbon and may be advantageous to form a mono-layer of graphene. This graphene layer 20 may be formed directly on the catalytic metal layer 10.

The catalytic metal layer 10 may be supplied in a sheet form but may be continuously fed while being wound on the first roller 100 as shown in Figure 3, A catalytic metal layer 10 in the form of a foil can be used.

2, if the graphene layer 20 is formed on both surfaces of the graphene layer 20, the graphene layer 20 formed on one side of the catalyst metal layer 10 is removed .

By this process, as shown in FIG. 4, the graphene layer 20 may be formed on one surface of the catalytic metal layer 10.

As such, the protective layer 30 is formed on the graphene layer 20 formed on one surface of the catalyst metal layer 10 (S20). When the protective layer 30 is formed on the graphene layer 20 as shown in FIG. 5.

The protective layer 30 is formed directly on the catalyst metal layer 10 to transfer the graphene layer 20 to the substrate 50 (see FIG. 8), and subsequently, to replace the graphene layer 20. Can play a protective role.

As long as the protective layer 30 is a layer capable of protecting the graphene layer 20, any material may be used. For example, a resin and a polymer layer may be used.

In particular, a resin such as PMMA, PC, cycloolefin copolymer (COC) or a material such as fluorinated polymer may be used.

Since the protective layer 30 has excellent heat resistance and heat absorption, electrical properties such as sheet resistance and electrical conductivity of the graphene layer 20 may be improved.

In addition, the electrical and physical properties of the graphene layer 20 can be prevented from being degraded during the manufacturing process. This is described in detail below.

Thereafter, the support layer 40 is positioned on the protective layer 30 (S30). The support layer 40 may serve to support the graphene layer 20 when the graphene layer 20 is later transferred to substrates of various electronic devices. As such, when the supporting layer 40 is attached on the protective layer 30, the state is as shown in FIG. 6.

As the support layer 40, a transfer film such as a heat transfer film or a light transfer film may be used. In other words, the transfer film is attached onto the protective layer 30. In some cases, a separate support layer may be directly formed on the protective layer 30.

The heat transfer film and the light transfer film include a base material, on which a pressure-sensitive adhesive layer (not shown) is disposed, which loses adhesiveness by heat or light. Thus, this adhesive layer is attached to the protective layer 30.

These adhesive layers include various polymer resins such as polyurethane resins, epoxy resins, acrylic resins, polymer resins, water-based adhesives, vinyl acetate emulsion adhesives, hot melt adhesives, visible light curable adhesives, infrared curable adhesives, electron beam curable adhesives, and polybenizimidazole (PBI) adhesives. Various adhesives, such as polyimide adhesive, silicone adhesive, imide adhesive, BMI (Bismaleimide) adhesive, can be used.

In addition, a rework adhesive may be used as the adhesive layer. That is, it is possible to easily peel off during or after the process, and to retain the residual material even after peeling off.

Such heat transfer film may be detached from the protective layer 30 when the heat is applied later, and the light transfer film may be separated from the protective layer 30 when the light transfer film is subsequently applied with light such as ultraviolet rays. Is possible.

If the transfer layer is directly attached onto the graphene layer 20 without the protective layer 30, the graphene layer 20 may be impacted in the transfer process, thereby providing the graphene layer 20 ), The electrical characteristics may be degraded.

For example, the transfer film may have a physical impact on the adhesive surface while the adhesiveness disappears. For example, in the case of a heat transfer film, when the heat is applied, the particles included in the adhesive become larger and separated from the adhesive surface. In this process, the adhesive surface may have a physical impact.

In addition, such an adhesive surface may leave a residue without clean separation from the object to be attached, which may also adversely affect the physical and electrical properties of the graphene layer 20 (reworkable adhesive Even with the use of layers, there is a possibility that some residual material remains.).

However, when the protective layer 30 is provided, heat or impact generated during the transfer process may not be transferred to the graphene layer 20, and the graphene layer 20 may be protected from the residual material, resulting in final fabrication. Will be to improve the characteristics of the graphene layer (20).

Next, a process of removing the catalyst metal layer 10 is performed (S40). This process can be done by etching.

In this etching method, in the example in which the support layer 40 and the protective layer 30 are attached to the graphene layer 20, the catalyst metal layer 10 is etched while only the catalyst metal layer 10 is immersed in the etching solution. Can be removed.

When the catalyst metal layer 10 is removed by the above process, as shown in FIG. 7, the protective layer 30 and the graphene layer 20 are attached to the support layer 40.

Next, the substrate 50 is attached or formed on the graphene layer 20 exposed by removing the catalyst metal layer 10 (S50).

Such a substrate 50 may be formed by directly coating on the graphene layer 20, or may be attached on the graphene layer 20.

The substrate 50 may be a layer capable of being coupled to various electronic devices together with the graphene layer 20 or may be a part of the electronic device.

That is, it may be a transparent and opaque substrate that can be used directly in various display devices, or may be a substrate that can be used directly in devices such as a touch panel.

In addition, the substrate 50 may be a substrate that can be used in various devices such as a solar cell, an electronic paper, a transparent electronic device, and a flexible device.

As the substrate 50, materials such as polyethylen terephthalate (PET), triacetyl cellulose (TAC), and polycarbonate (PC) may be used, and a semiconductor wafer such as silicon (Si) may be used. In addition, any member in the form of a transparent or opaque film can be used.

Next, when the support layer 40 is removed (S60), as shown in FIG. 9, the graphene layer 20 protected by the protective layer 30 is positioned on the substrate 50.

The process of removing the support layer 40 can be removed by applying heat or by using a solvent, depending on the structure of the support layer 40.

By such a process, the graphene layer 20 is located on the substrate 50 in a state protected by the protective layer 30, and a separate complicated process in the manufacturing process to be used in various electronic devices and devices Will be able to transfer the graphene layer 20 stably without passing through.

The graphene layer 20 positioned on the substrate 50 may be used as an auxiliary electrode in electronic devices such as various display devices.

Alternatively, the present invention may be used as a transparent electrode in a device such as a touch panel display, or may be used as an auxiliary electrode.

As described above, when used in such a device, since the graphene layer 20 is protected by the protective layer 30, the physical and electrical properties of the graphene layer 20 do not deteriorate stably in various devices. Can be applied.

In some cases, as shown in FIG. 10, the protective layer 30 may be removed and used.

That is, when the graphene layer 20 is electrically connected to an electronic device or used as an electrode or an auxiliary electrode, the protective layer 30 may be removed immediately before such a process, and thus the graphene layer 20 may be used. ) Will be able to protect as much as possible.

It should be noted that the embodiments of the present invention disclosed in the present specification and drawings are only illustrative of specific examples for the purpose of understanding and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that other modifications based on the technical idea of the present invention are possible in addition to the embodiments disclosed herein.

10: catalytic metal layer 20: graphene layer
30: protective layer 40: support layer
50: substrate

Claims (8)

Forming a graphene layer on the catalytic metal layer;
Forming a protective layer on the graphene layer;
Positioning a support layer on the protective layer;
Removing the catalytic metal layer;
Positioning a substrate on the graphene layer; And
Method of producing a graphene comprising the step of removing the support layer. The method of claim 1, wherein the protective layer comprises a resin or a polymer. The method of claim 1, wherein the protective layer comprises any one of PMMA, PC, COC, and fluorinated polymer. The method of claim 1, wherein the protective layer is directly formed on the graphene layer. The method of claim 1, wherein the support layer comprises a heat transfer film or a light transfer film. The method of claim 1, wherein the substrate comprises a semiconductor substrate or a transparent substrate including PET. The method of claim 1, wherein the removing of the support layer is performed by applying heat or light. Graphene prepared by the method of any one of claims 1 to 7.
KR1020120095418A 2012-08-30 2012-08-30 Method for manufacturing graphene and the graphene manufactured by the same KR20140029779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020120095418A KR20140029779A (en) 2012-08-30 2012-08-30 Method for manufacturing graphene and the graphene manufactured by the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120095418A KR20140029779A (en) 2012-08-30 2012-08-30 Method for manufacturing graphene and the graphene manufactured by the same

Publications (1)

Publication Number Publication Date
KR20140029779A true KR20140029779A (en) 2014-03-11

Family

ID=50642588

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120095418A KR20140029779A (en) 2012-08-30 2012-08-30 Method for manufacturing graphene and the graphene manufactured by the same

Country Status (1)

Country Link
KR (1) KR20140029779A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150134165A (en) * 2014-05-21 2015-12-01 한화테크윈 주식회사 Method for transferring graphene
WO2016204378A1 (en) * 2015-06-16 2016-12-22 한국원자력연구원 Radiation detector and manufacturing method therefor
US11198612B2 (en) 2016-06-10 2021-12-14 Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University) Graphene structure and method for manufacturing graphene having wrinkle pattern

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150134165A (en) * 2014-05-21 2015-12-01 한화테크윈 주식회사 Method for transferring graphene
WO2016204378A1 (en) * 2015-06-16 2016-12-22 한국원자력연구원 Radiation detector and manufacturing method therefor
US11198612B2 (en) 2016-06-10 2021-12-14 Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University) Graphene structure and method for manufacturing graphene having wrinkle pattern

Similar Documents

Publication Publication Date Title
KR101454463B1 (en) Method for manufacturing graphene
EP2489520B1 (en) Roll-to-roll transfer method of graphene, graphene roll produced by the method, and roll-to-roll transfer equipment for graphene
KR101221581B1 (en) Fabrication method of flexible transparent electrode substrate with graphene, and the flexible transparent electrode substrate substrate thereby
JP5139367B2 (en) Thin film transistor manufacturing method
US9573814B2 (en) High-throughput graphene printing and selective transfer using a localized laser heating technique
WO2012137923A1 (en) Transfer sheet provided with transparent conductive film mainly composed of graphene, method for manufacturing same, and transparent conductor
KR101437449B1 (en) Method for constructing laminate with graphene
KR101284535B1 (en) Transferring method of graphene, and graphene transferred flexible substrate thereby
KR101498082B1 (en) Method for manufacturing graphene using light
KR101320407B1 (en) Direct transfer method of graphene sheet
KR20140029779A (en) Method for manufacturing graphene and the graphene manufactured by the same
KR20130090132A (en) Method for manufacturing graphene and graphene manufactured by the same
JP2012221695A (en) Transfer sheet including transparent conductive film containing graphene as main component and method for producing the same
KR102015912B1 (en) Method for manufacturing graphene and the graphene manufactured by the same
KR101461977B1 (en) Method for doping graphene layer
KR101613558B1 (en) Method for doping graphene layer
KR20140143533A (en) Method for manufacturing patterned graphene and the graphene manufactured by the same
KR101461978B1 (en) Method for manufacturing patterned graphene
US9373429B2 (en) Method of obtaining graphene
KR101829836B1 (en) Method for manufacturing electrode including graphene
TWI358092B (en) Method for making thin film transistor
KR102434700B1 (en) Method of fabricating graphene nano-mesh
KR101716187B1 (en) Method for transferring graphene
KR101706963B1 (en) Method for manufacturing graphene hybrid electrode
KR101828531B1 (en) Method for transferring graphene

Legal Events

Date Code Title Description
E902 Notification of reason for refusal
E90F Notification of reason for final refusal
E601 Decision to refuse application