KR20140027558A - 회전 마그넷 스퍼터 장치, 스퍼터 방법 및, 회전 마그넷 스퍼터 장치의 냉각 방법 - Google Patents

회전 마그넷 스퍼터 장치, 스퍼터 방법 및, 회전 마그넷 스퍼터 장치의 냉각 방법 Download PDF

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Publication number
KR20140027558A
KR20140027558A KR1020147003542A KR20147003542A KR20140027558A KR 20140027558 A KR20140027558 A KR 20140027558A KR 1020147003542 A KR1020147003542 A KR 1020147003542A KR 20147003542 A KR20147003542 A KR 20147003542A KR 20140027558 A KR20140027558 A KR 20140027558A
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KR
South Korea
Prior art keywords
spiral
magnet
target
rotating
flow path
Prior art date
Application number
KR1020147003542A
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English (en)
Korean (ko)
Inventor
타다히로 오오미
테츠야 고토
타카아키 마츠오카
Original Assignee
고쿠리츠다이가쿠호진 도호쿠다이가쿠
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 고쿠리츠다이가쿠호진 도호쿠다이가쿠, 도쿄엘렉트론가부시키가이샤 filed Critical 고쿠리츠다이가쿠호진 도호쿠다이가쿠
Publication of KR20140027558A publication Critical patent/KR20140027558A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020147003542A 2009-05-15 2010-03-19 회전 마그넷 스퍼터 장치, 스퍼터 방법 및, 회전 마그넷 스퍼터 장치의 냉각 방법 KR20140027558A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009118169 2009-05-15
JPJP-P-2009-118169 2009-05-15
PCT/JP2010/054867 WO2010131521A1 (ja) 2009-05-15 2010-03-19 回転マグネットスパッタ装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020117027136A Division KR20120008528A (ko) 2009-05-15 2010-03-19 회전 마그넷 스퍼터 장치, 스퍼터 방법, 전자 장치의 제조 방법 및 회전 마그넷 스퍼터 장치의 냉각 방법

Publications (1)

Publication Number Publication Date
KR20140027558A true KR20140027558A (ko) 2014-03-06

Family

ID=43084900

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020147003542A KR20140027558A (ko) 2009-05-15 2010-03-19 회전 마그넷 스퍼터 장치, 스퍼터 방법 및, 회전 마그넷 스퍼터 장치의 냉각 방법
KR1020117027136A KR20120008528A (ko) 2009-05-15 2010-03-19 회전 마그넷 스퍼터 장치, 스퍼터 방법, 전자 장치의 제조 방법 및 회전 마그넷 스퍼터 장치의 냉각 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020117027136A KR20120008528A (ko) 2009-05-15 2010-03-19 회전 마그넷 스퍼터 장치, 스퍼터 방법, 전자 장치의 제조 방법 및 회전 마그넷 스퍼터 장치의 냉각 방법

Country Status (6)

Country Link
US (1) US20120064259A1 (zh)
JP (1) JPWO2010131521A1 (zh)
KR (2) KR20140027558A (zh)
CN (1) CN102421932B (zh)
DE (1) DE112010002010T5 (zh)
WO (1) WO2010131521A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101140195B1 (ko) * 2007-03-16 2012-05-02 도쿄엘렉트론가부시키가이샤 마그네트론 스퍼터 장치
WO2008126811A1 (ja) * 2007-04-06 2008-10-23 National University Corporation Tohoku University マグネトロンスパッタ装置
JP5687049B2 (ja) * 2010-12-27 2015-03-18 キヤノンアネルバ株式会社 搬送装置及び真空処理装置
KR102348947B1 (ko) * 2014-10-30 2022-01-11 삼성전자 주식회사 전자장치의 화면 표시 제어 방법 및 장치
JP6841130B2 (ja) * 2017-03-30 2021-03-10 Tdk株式会社 モータ
DE102020100061A1 (de) 2020-01-03 2021-07-08 Schott Ag Kühlvorrichtung und Kühlverfahren für Sputtertargets
WO2023274558A1 (de) 2021-07-02 2023-01-05 Schott Ag Kühlvorrichtung und kühlverfahren für sputtertargets

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5399253A (en) * 1992-12-23 1995-03-21 Balzers Aktiengesellschaft Plasma generating device
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
JP3803520B2 (ja) * 1999-02-22 2006-08-02 忠弘 大見 マグネット回転スパッタ装置
JP2001032067A (ja) * 1999-07-22 2001-02-06 Sanyo Shinku Kogyo Kk 成膜用磁石とそれを用いた成膜方法及びその装置
JP2005133110A (ja) * 2003-10-28 2005-05-26 Konica Minolta Opto Inc スパッタリング装置
ATE395447T1 (de) * 2004-06-22 2008-05-15 Applied Materials Gmbh & Co Kg Zerstäubungskatode für beschichtungsprozesse
TW200710243A (en) * 2005-05-02 2007-03-16 Honeywell Int Inc Target assemblies, targets, backing plates, and methods of target cooling
CN101283114B (zh) 2005-10-07 2012-04-18 国立大学法人东北大学 磁控溅射装置
US20070089982A1 (en) * 2005-10-24 2007-04-26 Hendryk Richert Sputtering target and method/apparatus for cooling the target
WO2008126811A1 (ja) * 2007-04-06 2008-10-23 National University Corporation Tohoku University マグネトロンスパッタ装置

Also Published As

Publication number Publication date
CN102421932B (zh) 2014-02-19
DE112010002010T5 (de) 2012-06-28
WO2010131521A1 (ja) 2010-11-18
JPWO2010131521A1 (ja) 2012-11-01
CN102421932A (zh) 2012-04-18
KR20120008528A (ko) 2012-01-30
US20120064259A1 (en) 2012-03-15

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