KR20140025817A - Etchant composition for molybdenum alloy layer and indium oxide layer - Google Patents

Abstract

According to the present invention, a molybden alloy layer and an indium oxide layer etchant composition comprises hydrogen peroxide, a fluorid compound, a compound having a sulfonic acid group, an anticorrosive agent, an auxiliary oxidizing agent, a peroxide stabilizer, and water. The etching speed of the molybden alloy layer and the indium oxide layer is maintained, and the etching speed of SiNx which is a lower insulating layer of a pixel electrode is reduced. Therefore, failure due to irregular coating is reduced when an alignment layer is coated which is a post-process.

Description

TECHNICAL FIELD [0001] The present invention relates to a molybdenum alloy film and an etchant composition for an indium oxide film. [0002] ETCHANT COMPOSITION FOR MOLYBDENUM ALLOY LAYER AND INDIUM OXIDE LAYER [0003]

The present invention relates to an etchant composition for use in a process for etching multiple layers of a molybdenum alloy film, indium oxide film or molybdenum alloy film and indium oxide film used for a pixel electrode of an ultra-thin liquid crystal display (TFT-LCD)

For the pixel electrode of the semiconductor device and the liquid crystal display device such as the TFT-LCD, a single film of a molybdenum alloy film and an indium oxide film, or a multi-layer film of a molybdenum alloy film and an indium oxide film is used. The pixel electrodes are generally stacked on a substrate by a method such as sputtering, a photoresist is uniformly applied on the substrate, light is irradiated through a mask engraved with a pattern, and a photoresist of a desired pattern is formed through development Next, a pattern is transferred to a metal film under the photoresist by dry or wet etching, and then a series of lithography processes are performed to remove unnecessary photoresist by a peeling process.

When the etching of the molybdenum alloy film and the indium oxide film is performed by using the same etching solution, the manufacturing process can be simplified. However, the molybdenum alloy film generally has a problem in that wet etching is not easy because of its excellent chemical resistance, There is a problem that the molybdenum alloy film can not be etched with the oxalic acid based etching solution.

In the prior art, Korean Patent Laid-Open Publication No. 2008-0070101 discloses a molybdenum alloy film containing hydrogen peroxide, a fluorine compound, a water-soluble cyclic amine compound, an inorganic acid and water, and an etchant of indium oxide, Patent Publication No. 2008-0107502 A Fe ^{3 +} compound, a molybdenum alloy film including hydrogen fluoride and water, and an indium oxide film etching solution. However, the fluorine compound in the above composition etches the SiN _x , which is the insulating film between the source and drain electrodes and the pixel electrode, together with the molybdenum alloy film, the indium oxide film or the molybdenum alloy film and the indium oxide film. If the etching of the insulating film increases, it may cause defective operation that the TFT-LCD does not operate normally due to non-uniform application during the application of the alignment film in the subsequent process.

Korean Patent Publication No. 10-2008-0107502 Korean Patent Publication No. 10-2012-0070101

In order to solve the above-mentioned problems, the present invention provides a method of manufacturing a semiconductor device including a molybdenum alloy film, an indium oxide film or a molybdenum alloy film, and an indium oxide film, which can reduce the etching rate of the insulating film SiN _x while maintaining the etching rate of the molybdenum alloy film and the indium oxide film A multi-layer etchant composition and an etching method using the same.

The present invention relates to a hydrogen peroxide composition comprising 5 to 25% by weight of hydrogen peroxide; 0.1 to 2% by weight of a fluorine compound; 0.001 to 2% by weight of a compound having a sulfonic acid group; 0.1 to 2% by weight of a corrosion inhibitor; From 0.01 to 1% by weight of a co-oxidant; An indium oxide film or a molybdenum alloy film and an indium oxide film, wherein water is contained so that the total weight of the composition is 100 wt%.

In the present invention, the sulfonic acid group-containing compound may be at least one selected from the group consisting of alkyl sulfonic acid, alkyl disulfonic acid, alkylbenzene sulfonic acid, alkylphenyl ether disulfonic acid, alkyl naphthalene sulfonic acid, naphthalene sulfonic acid, naphthalene disulfonic acid, polymers of formaldehyde and naphthalene sulfonic acid, A compound having a sulfonic acid group selected from a polymer of methyl propanesulfonic acid, a copolymer of acrylic acid and acrylamidomethylpropanesulfonic acid, and a vinylbenzenesulfonic acid polymer or a salt thereof.

In the present invention, the fluorine compound is preferably at least one selected from the group consisting of HF, NaF, KF, AlF ₃ , HBF ₄ , NH ₄ F, NH ₄ HF ₂ , NaHF ₂ , KHF ₂ and NH ₄ BF ₄ Do.

In the present invention, the corrosion inhibitor is preferably at least one selected from a ring heteroaromatic compound, a ring heteroaliphatic compound, an aromatic polyhydric alcohol, and a straight chain polyhydric alcohol.

In the present invention, the ring heteroaromatic compound is preferably selected from the group consisting of furan, thiophene, pyrrole, oxazole, thiazole, imidazole, pyrazole, triazole, tetrazole, benzofuran, benzothiophene, indole, benzothiazole, At least one member selected from the group consisting of imidazole, benzopyrazole, aminotetrazole, methyltetrazole, tolutoriazole, hydrotolurriazole and hydroxytoluuriaol,

The cyclic heteroaliphatic compound is preferably at least one selected from the group consisting of piperazine, methylpiperazine, hydroxylethylpiperazine, pyrrolidine and allyoxane.

In the present invention, the aromatic polyhydric alcohol is at least one selected from the group consisting of gallic acid, methyl gallate, ethyl gallate, propyl gallate and butyl gallate,

The linear polyhydric alcohol is preferably at least one selected from the group consisting of glycerol, erythritol, sorbitol, mannitol, and xylitol.

In the present invention, the auxiliary oxidizing agent is preferably an inorganic acid or an inorganic salt, and is preferably at least one selected from the group consisting of nitric acid, sulfuric acid, phosphoric acid, hydrochloric acid, hypochlorous acid, permanganic acid and salts thereof.

In the present invention, it is preferable that the hydrous stabilizer is at least one selected from the group consisting of a chelating agent and a glycol compound.

In the present invention, the chelating agent may be at least one selected from the group consisting of iminodiacetic acid, nitrilotriacetic acid, ethylenediaminetetraacetic acid, diethylenetri nylpentaacetic acid, aminotri (methylenephosphonic acid), 1-hydroxyethane At least one member selected from the group consisting of ethylene diamine tetra (methylene propanoic acid), diethylenetriamine penta (methylene phosphonic acid), sarcosine, alanine, aminobutyric acid, glutamic acid and glycine,

The glycol compound is preferably at least one selected from the group consisting of ethylene glycol, propylene glycol, polyethylene glycol and polypropylene glycol.

The present invention also provides an etching method using the above-mentioned molybdenum alloy film, an indium oxide film, or an etchant composition for a multiple film of a molybdenum alloy film and an indium oxide film.

The etchant composition according to the present invention reduces the etching rate of SiN _x while maintaining the etching rate of the multiple films of the molybdenum alloy film, the indium oxide film or the molybdenum alloy film and the indium oxide film by using the compound having a sulfonic acid group, Thereby reducing defects due to application.

1 shows a scanning electron micrograph of a molybdenum titanium alloy film (MoTi) etch profile of the composition according to Example 1. Fig.
2 shows a scanning electron micrograph of an indium tin oxide (ITO) etch profile of the composition according to Example 1. Fig.
3 shows a scanning electron micrograph of passivation (SiNx) damage of the composition according to Example 1. Fig.
Figure 4 shows a scanning electron micrograph of the passivation (SiNx) damage of the composition according to Comparative Example 1.

The present invention relates to a process for the production of a hydrogen peroxide solution comprising 5 to 25% by weight of hydrogen peroxide, 0.1 to 2% by weight of a fluorine compound, 0.001 to 2% by weight of a compound having a sulfonic acid group, 0.1 to 2% by weight of a corrosion inhibitor, 0.01 to 1% % And a total weight of the composition of 100% by weight based on the total composition of the molybdenum alloy film, the indium oxide film or the molybdenum alloy film and the indium oxide film.

In the present invention, the hydrogen peroxide acts as a main oxidizing agent. The hydrogen peroxide may be included in an amount of 5 to 25% by weight, preferably 10 to 20% by weight, more preferably 12 to 18% by weight based on the total weight of the composition. If it is contained in an amount less than 5% by weight, the oxidizing power of the molybdenum alloy may not be sufficient and the etching may not be performed. If it exceeds 25% by weight, excessive etching may occur in the underlying film of the pixel electrode, Phase control becomes difficult, which is not preferable.

In the present invention, the fluorine compound functions as a main etching agent for the multi-layer film of the molybdenum alloy film, the indium oxide film or the molybdenum alloy film and the indium oxide film, and acts to increase the etching rate and to remove residues. The fluorinated compound may be present in an amount of 0.1 to 2% by weight, preferably 0.1 to 1% by weight, more preferably 0.2 to 0.8% by weight based on the total weight of the composition. If it is contained in an amount of less than 0.1% by weight, the etching rate is slowed, and the residue of the multi-layer film of the molybdenum alloy film, the indium oxide film or the molybdenum alloy film and the indium oxide film may be formed after the etching, Which is undesirable because it can excessively etch the copper film constituting the source and drain electrodes.

The fluorine compound is dissociated F ^- and HF ₂ ^-, and compounds that yield, HF, NaF, KF, AlF 3, HBF 4, NH 4 F, NH 4 HF 2, NaHF 2, KHF 2 and NH ₄ BF ₄ And the like. Specifically, the hydrogen fluoride (HF) easily reacts with titanium in the molybdenum-titanium alloy film to generate titanium fluoride, whereby the molybdenum-titanium alloy film is etched and the etching rate is increased. Further, the indium oxide film reacts with hydrogen fluoride to generate indium fluoride (In ₂ F ₆ ) and water, thereby etching the indium oxide film and increasing the etching rate.

In the present invention, the sulfonic acid group-containing compound serves to reduce the etching rate of SiN _x while maintaining the etching rate of the molybdenum alloy and the indium oxide film in the presence of the fluorine compound by protecting the insulating film SiN _x . That is, the selectivity of etching of SiN _x is controlled in comparison with the etching of multiple films of molybdenum alloy film, indium oxide film or molybdenum alloy film and indium oxide film. The compound having a sulfonic acid group may be used in an amount of 0.001 to 2% by weight, preferably 0.01 to 1% by weight, more preferably 0.01 to 0.7% by weight, based on the total weight of the composition.

The sulfonic acid group-containing compound may be a polymer of an alkylsulfonic acid, an alkylsulfonic acid, an alkylbenzenesulfonic acid, an alkylphenylether disulfonic acid, an alkylnaphthalenesulfonic acid, a naphthalenesulfonic acid, a naphthalene disulfonic acid, a polymer of formaldehyde and naphthalenesulfonic acid, , A copolymer of acrylic acid and acrylamidomethylpropanesulfonic acid, and a vinylbenzene sulfonic acid polymer, or a salt thereof. In the case of a low-molecular substance, the number of carbon atoms of the alkyl is not particularly limited, and preferably 2 to 10 carbon atoms can be used. Preferred examples thereof include salts of 2-ethylhexylsulfonic acid, dodecylbenzenesulfonic acid, sodium xylene sulfonate, disodium 2,6-naphthalene disulfonate, sodium hexanesulfonate, sodium cumene sulfonate, ethylbenzene sulfonate, Acrylamido-2-methylpropanesulfonic acid) and poly (vinylbenzenesulfonic acid).

In the present invention, the corrosion inhibitor includes at least one selected from ring heteroaromatics, ring heteroaliphatic compounds, aromatic polyhydric alcohols, and linear polyhydric alcohols.

In the present invention, the corrosion inhibitor acts to prevent the etching of the copper film used as the source / drain electrode, which can be caused by cracks in the contact holes of the pixel electrode, the source / drain electrode and the insulating film in the pixel electrode etching process. The corrosion inhibitor may be 0.1 to 2 wt%, preferably 0.5 to 1.5 wt%, more preferably 1 wt%, based on the total weight of the composition. If it is contained in an amount of less than 0.1% by weight, the corrosion resistance of the copper film is insufficient and it is difficult to prevent the corrosion of the copper film used as the source drain electrode. When the copper film is contained more than 2% by weight, The etch rate of the molybdenum alloy film, the indium oxide film or the molybdenum alloy film and the indium oxide film constituting the pixel electrode may be lowered, which is not preferable.

In the present invention, the ring heteroaromatic compound is preferably selected from the group consisting of furan, thiophene, pyrrole, oxazole, thiazole, imidazole, pyrazole, triazole, tetrazole, benzofuran, benzothiophene, indole, benzothiazole, Wherein the ring heteroaliphatic compound is at least one selected from the group consisting of imidazole, benzopyrazole, aminotetrazole, methyltetrazole, tolutriazole, hydrotolurriazole, and hydroxytoluuridazole, , Methylpiperazine, hydroxylethylpiperazine, pyrrolidine and allyloxane.

In the present invention, the aromatic polyhydric alcohol is at least one selected from the group consisting of gallic acid, methyl gallate, ethyl gallate, propyl gallate and butyl gallate, and the straight chain polyhydric alcohol is glycerol, erythritol, sorbitol , Mannitol, and xylitol.

In the present invention, the auxiliary oxidant acts as a co-oxidant for a multi-layer film of a molybdenum alloy film, indium oxide film or molybdenum alloy film and indium oxide film. As the pixel electrode, not only a single film of a molybdenum alloy and an indium oxide film but also a multi-film of a molybdenum alloy film and an indium oxide film are used. In the case of the multi-layered film, the molybdenum alloy film is tip or undercut due to the difference in etch rate between the molybdenum alloy film and the indium oxide film. The auxiliary oxidant increases the etch rate of the molybdenum alloy to prevent tip or undercuts from being produced.

The auxiliary oxidizing agent may be 0.01 to 1% by weight, preferably 0.05 to 0.5% by weight, more preferably 0.1 to 0.3% by weight based on the total weight of the composition. If it is contained in an amount less than 0.01% by weight, the increase in the molybdenum etch rate is not sufficient, and if it exceeds 1% by weight, an additional effect of increasing the etching rate can not be obtained. The auxiliary oxidizing agent may be an inorganic acid or an inorganic salt, preferably at least one selected from the group consisting of nitric acid, sulfuric acid, phosphoric acid, hydrochloric acid, hypochlorous acid, permanganic acid and salts thereof.

In the present invention, the etchant composition may contain at least one member selected from the group consisting of a chelating agent and a glycol compound as a hydrous stabilizer. The hydrogen peroxide stabilizer acts to increase the maximum number of treatments of the etching solution by controlling the decomposition reaction of the hydrogen peroxide even when the metal ion content in the chemical solution increases due to the increase in the number of treatments as the etching is repeated. The hydrous stabilizer may be present in an amount of 0.1 to 5% by weight, preferably 0.5 to 4% by weight, more preferably 1 to 3% by weight based on the total weight of the composition.

 If the hydrous stabilizer is contained in an amount of less than 0.1% by weight, the hydrolysis reaction can not be effectively inhibited, and if it exceeds 5% by weight, the etching rate may be lowered.

As the hydrous stabilizer, a chelating agent or a glycol compound capable of stabilizing the metal ion may be used. The chelating agent may be selected from the group consisting of iminodiacetic acid, nitrilotriacetic acid, ethylenediaminetetraacetic acid, diethylenetri nylpentaacetic acid, aminotri (methylenephosphonic acid), 1-hydroxyethane (1,1- The glycol compound may be at least one selected from the group consisting of tetra (methylene propionic acid), diethylenetriamine penta (methylenephosphonic acid), sarcosine, alanine, aminobutyric acid, glutamic acid, and glycine, and the glycol compound may be ethylene glycol, Polyethylene glycol, and polypropylene glycol. More preferably, it may be polyethylene glycol having a molecular weight of 1000 or less. If the molecular weight is excessively high, bubbles are generated more and may be unsuitable for etching equipment using spray.

The water contained in the composition of the present invention is not particularly limited, but deionized water can be used, and preferably deionized water having a resistivity value of 18 M OMEGA. / Cm or more is used to show the degree of removal of ions in water.

The present invention also provides an etching method using a multi-layer etchant composition of a molybdenum alloy film, indium oxide film or molybdenum alloy film and indium oxide film.

Here, the molybdenum alloy film may be a molybdenum-titanium alloy film or a molybdenum-cobalt alloy film, and the indium oxide film may be an indium zinc oxide film (IZO) or an indium tin oxide film (ITO) as a transparent conductive film.

Here, the substrate may be a glass substrate for a TFT-LCD.

Hereinafter, the present invention will be described in more detail with reference to Examples. However, the present invention is not limited to the following Examples.

< Example  1 to 12, Comparative Example  1 and 2: Etchant  Preparation of the composition >

The components of the compositions of Examples 1 to 12 according to the present invention and the compositions of Comparative Examples 1 and 2 for comparing the performance of the present invention were prepared by mixing each component with the component contents shown in Table 1 below.

Example
And
Comparative Example Hydrogen peroxide
[weight%] Corrosion inhibitor
[weight%] Auxiliary oxidant Fluorine compound
[weight%] A compound containing a sulfonic acid group
[weight%] Fruit stabilizer
[weight%] water
[weight%] Example 1 15 TAZ 1.0 nitrate 0.2 NH ₄ HF ₂ 0.5 S-01 0.5 PEG 2.0 81 Example 2 15 TAZ 1.0 nitrate 0.2 NH ₄ HF ₂ 0.5 S-02 0.5 PEG 2.0 81 Example 3 15 TAZ 1.0 nitrate 0.2 NH ₄ HF ₂ 0.5 S-03 0.5 PEG 2.0 81 Example 4 15 TAZ 1.0 nitrate 0.2 NH ₄ HF ₂ 0.5 S-04 0.5 PEG 2.0 81 Example 5 15 TAZ 1.0 nitrate 0.2 NH ₄ HF ₂ 0.5 S-05 0.5 PEG 2.0 81 Example 6 15 TAZ 1.0 nitrate 0.2 NH ₄ HF ₂ 0.5 S-06 0.5 PEG 2.0 81 Example 7 15 TAZ 1.0 nitrate 0.2 NH ₄ HF ₂ 0.5 S-07 0.5 PEG 2.0 81 Example 8 15 TAZ 1.0 nitrate 0.2 NH ₄ HF ₂ 0.5 S-08 0.5 PEG 2.0 81 Example 9 15 TAZ 1.0 nitrate 0.2 NH ₄ HF ₂ 0.5 S-09 0.5 PEG 2.0 81 Example 10 15 TAZ 1.0 Hydrochloride 0.2 NH ₄ HF ₂ 0.5 S-01 0.5 PEG 2.0 81 Example 11 15 TAZ 1.0 Hydrochloride 0.2 NH ₄ HF ₂ 0.5 S-02 0.5 PEG 2.0 81 Example 12 15 TAZ 1.0 Hydrochloride 0.2 NH ₄ HF ₂ 0.5 S-03 0.5 PEG 2.0 81 Comparative Example 1 15 TAZ 1.0 nitrate 0.2 NH ₄ HF ₂ 0.5 - - PEG 2.0 81.5 Comparative Example 2 15 TAZ 1.0 - - NH ₄ HF ₂ 0.5 - - PEG 2.0 81.5

TAZ: triazole,

PEG: Polyethylene glycol (poly (ethylene glycol),

S-1: 2-ethylhexylsulfonate,

S-2: Dodecylbenzenesulfonic acid,

S-3: sodium xylene sulfonate,

S-4: disodium 2,6-naphthalene disulfonic acid salt,

S-5: Disodium hexanesulfonate,

S-6: sodium cumene sulfonate,

S-7: Ethylbenzenesulfonic acid salt,

S-8: Poly (acrylic acid-2-acrylamido-2-methylpropanesulfonic acid)

S-9: Poly (vinylbenzene sulfonic acid)

Experimental Example  One : Etchant  Performance testing of the composition

A 300 Å molybdenum titanium alloy film and a 500 Å indium tin oxide film were deposited on the glass substrate and then the molybdenum alloy film and the indium oxide double film were patterned by a photolithography process of a molybdenum titanium alloy 100 Å and indium tin oxide film 300 Å, . The etching was carried out in a sprayable apparatus (Mini-etcher ME-001). After the etching, the residue of Mo film, indium oxide film, indium oxide film, indium oxide film, indium oxide film, MoTi tip, and SiN _x were damaged by PAS damage using a scanning electron microscope (Hitachi, S-4800) Respectively.

1 and 2 show a molybdenum titanium alloy film (MoTi) etch profile and an indium tin oxide (ITO) etch profile using the composition according to Example 1, respectively.

Figure 3 shows a scanning electron micrograph for passivation (SiNx) damage when using the composition according to Example 1 and Figure 4 shows a graph of the damage to passivation (SiNx) A scanning electron microscope photograph is shown.

The experimental results are summarized in Table 2.

Example
And
Comparative Example Molybdenum titanium alloy film residue Indium tin
Oxide film
Residual occurrence Double membrane residue Whether a double-wall MoTi tip occurs PAS damage
(Å, 100 s etch) Example 1 X X X X 277 Example 2 X X X X 210 Example 3 X X X X 236 Example 4 X X X X 220 Example 5 X X X X 278 Example 6 X X X X 245 Example 7 X X X X 269 Example 8 X X X X 244 Example 9 X X X X 276 Example 10 X X X X 259 Example 11 X X X X 299 Example 12 X X X X 234 Comparative Example 1 X X X X 595 Comparative Example 2 X X X O 574

X: No residue. No tip

O: Residual occurred. Has a tip

Referring to Table 2, it was confirmed that the compositions of Examples 1 to 12 according to the present invention did not leave a residue around the pattern after the etching process and did not generate a molybdenum titanium tip (FIGS. 1 and 2). On the other hand, the composition of Comparative Example 2 produced a molybdenum titanium tip. Also in the case of passivation damage (PAS damage), it was confirmed that Comparative Examples 1 and 2 were two times higher than those of Examples 1 to 12 (Figs. 3 and 4).

The above results show that when the etchant composition of the present invention is used to etch a molybdenum-titanium alloy film used as an electrode of a TFT-LCD display, the TFT-LCD display profile is improved due to excellent double film residue, tip and passivation damage characteristics .

Claims (10)

5 to 25 wt% hydrogen peroxide, 0.1 to 2 wt% fluorine compound, 0.001 to 2 wt% compound with sulfonic acid group, 0.1 to 2 wt% corrosion inhibitor, 0.01 to 1 wt% auxiliary oxidant, 0.1 to 5 wt% perwater stabilizer and total A molybdenum alloy film, an indium oxide film or an molybdenum alloy film containing water so that the total weight of the composition is 100% by weight, the etching liquid composition for a multi-layer film.
According to claim 1, wherein the compound having a sulfonic acid group is alkyl sulfonic acid, alkyl disulfonic acid, alkylbenzene sulfonic acid, alkylphenyl ether disulfonic acid, alkyl naphthalene sulfonic acid, naphthalene sulfonic acid, naphthalene disulfonic acid, polymer of formaldehyde and naphthalene sulfonic acid, acrylamime A molybdenum alloy film, an indium oxide film, or a molybdenum alloy film, which is a compound having a sulfonic acid group or a salt thereof selected from a polymer of domethylpropanesulfonic acid, a copolymer of acrylic acid and acrylamidomethylpropanesulfonic acid, and a vinylbenzene sulfonic acid polymer. Etching liquid composition for multi-layer of indium oxide film.
The fluorine compound according to claim 1, wherein the fluorine compound is at least one selected from the group consisting of HF, NaF, KF, AlF ₃ , HBF ₄ , NH ₄ F, NH ₄ HF ₂ , NaHF ₂ , KHF ₂ and NH ₄ BF ₄ Characterized in that it comprises a molybdenum alloy film, an indium oxide film or a molybdenum alloy film and an indium oxide film.
The method according to claim 1, wherein the corrosion inhibitor is at least one selected from the group consisting of a ring heteroaromatic compound, a ring heteroaliphatic compound, an aromatic polyhydric alcohol, and a straight chain polyalcohol, and a molybdenum alloy film, an indium oxide film or a molybdenum alloy film, Of an etchant composition.
The method of claim 4, wherein the ring heteroaromatic compound is selected from the group consisting of furan, thiophene, pyrrole, oxazole, thiazole, imidazole, pyrazole, triazole, tetrazole, benzofuran, benzothiophene, indole, benzothiazole, At least one member selected from the group consisting of benzoimidazole, benzopyrazole, aminotetrazole, methyltetrazole, tololliazole, hydrotolurriazole and hydroxytoluroliazole,
Wherein the cyclic heteroaliphatic compound is at least one selected from the group consisting of piperazine, methylpiperazine, hydroxylethylpiperazine, pyrrolidine and alooxane, a molybdenum alloy film, an indium oxide film or a molybdenum alloy film and an indium oxide film Of an etchant composition.
The method according to claim 4, wherein the aromatic polyhydric alcohol is at least one selected from the group consisting of gallic acid, methyl gallate, ethyl gallate, propyl gallate and butyl gallate,
Wherein the linear polyhydric alcohol is at least one selected from the group consisting of glycerol, erythritol, sorbitol, mannitol, and xylitol, and an etchant composition for a multiple film of a molybdenum alloy film, indium oxide film or molybdenum alloy film and indium oxide film.
The etchant composition according to claim 1, wherein the co-oxidant is an inorganic acid or an inorganic salt. An etching solution composition for a multilayer film of a molybdenum alloy film, indium oxide film or molybdenum alloy film and indium oxide film.
The method according to claim 7, wherein the inorganic acid or the inorganic salt is at least one selected from the group consisting of nitric acid, sulfuric acid, phosphoric acid, hydrochloric acid, hypochlorous acid, permanganic acid and salts thereof. And an indium oxide film.
The etchant composition according to claim 1, wherein the hydrothermal stabilizer is at least one selected from the group consisting of a chelating agent and a glycol compound, and an etchant composition for a multiple film of an indium oxide film or a molybdenum alloy film and an indium oxide film.
The method of claim 9, wherein the chelating agent is selected from the group consisting of iminodiacetic acid, nitrilotriacetic acid, ethylenediaminetetraacetic acid, diethylenetri nylpentaacetic acid, aminotri (methylenephosphonic acid), 1-hydroxyethane At least one member selected from the group consisting of ethylenediaminetetra (methylene propanoic acid), diethylenetriamine penta (methylenephosphonic acid), sarcosine, alanine, aminobutyric acid, glutamic acid and glycine,
Wherein the glycol compound is at least one selected from the group consisting of ethylene glycol, propylene glycol, polyethylene glycol, and polypropylene glycol, an etchant composition for a multiple film of an indium oxide film or a molybdenum alloy film and an indium oxide film.

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