KR101349975B1 - Etchant composition for molybdenium alloy layer and indium oxide layer - Google Patents

Abstract

The present invention relates to an etching liquid composition of molybdenum alloy film and indium oxide film, 5 to 25% by weight of hydrogen peroxide, 0.1 to 2% by weight of corrosion inhibitor, 0.1 to 2% by weight of fluorine compound, 0.1 to relative to the total weight of the composition A molybdenum alloy film, an indium oxide film, or a molybdenum alloy film and an indium oxide film, comprising 2% by weight of a chlorine-containing compound, 0.1 to 5% by weight of an overwater stabilizer, and water such that the total weight of the total composition is 100% by weight. It relates to an etching liquid composition for multiple membranes.
An object of the present invention is to improve the durability of the etching equipment by controlling the formation of precipitates when etching the molybdenum alloy film, indium oxide film or molybdenum alloy film and indium oxide film used in the TFT-LCD pixel electrode, and lower TFT It is to provide an etchant composition to minimize the copper corrosion used as the source and drain of.

Description

Molybdenum alloy film and indium oxide etching solution composition {ETCHANT COMPOSITION FOR MOLYBDENIUM ALLOY LAYER AND INDIUM OXIDE LAYER}

The present invention is characterized in that the molybdenum alloy film, indium oxide film or molybdenum, characterized in that the deposition control and the copper corrosion prevention performance during the etching process of the molybdenum alloy film and indium oxide film used for the pixel electrode of the ultra-thin liquid crystal display (TFT-LCD). The present invention relates to an etching liquid composition for multiple films of an alloy film and an indium oxide film.

For the pixel electrode of the semiconductor device and the liquid crystal display device such as the TFT-LCD, a single film of a molybdenum alloy film and an indium oxide film, or a multi-layer film of a molybdenum alloy film and an indium oxide film is used. The pixel electrodes are generally stacked on a substrate by a method such as sputtering, a photoresist is uniformly applied on the substrate, light is irradiated through a mask engraved with a pattern, and a photoresist of a desired pattern is formed through development Next, a pattern is transferred to a metal film under the photoresist by dry or wet etching, and then a series of lithography processes are performed to remove unnecessary photoresist by a peeling process.

When the etching of the molybdenum alloy film and the indium oxide film is performed by using the same etching solution, the manufacturing process can be simplified. However, the molybdenum alloy film generally has a problem in that wet etching is not easy because of its excellent chemical resistance, There is a problem that the molybdenum alloy film can not be etched with the oxalic acid based etching solution.

As a conventional technique, although an etchant is disclosed in Korea Patent Publication No. 2008-0045853, Patent Publication No. 2008-0045854, Patent Publication No. 2008-0107502, etc., the molybdenum alloy film and the indium oxide film as the etching solution disclosed in the above technology. In the case of etching, there is a problem in that precipitates are generated by chemical reaction between the etchant and the corresponding alloy film, thereby making a bad pixel, and in the case of continuous use, there is a problem in decreasing the process holding time and durability of the etching equipment. Known. In addition, it is known that there is a problem that the corrosion of the copper film used as the source and drain of the lower TFT is not complete, so that the corrosion of some copper film occurs, resulting in a decrease in overall device yield.

In this way, the chemical reaction to minimize the reaction between the etchant and the molybdenum alloy film and the indium oxide is minimized, or the reaction does not occur, and the molybdenum alloy film, the indium oxide film, or the molybdenum alloy film and the indium oxide film have improved corrosion protection to the copper film below. Development of an etching solution for multiple membranes is required.

KR 2008-0045853 A 2008. 5. 26 KR 2008-0045854 A 2008. 5. 26 KR 2008-0107502 A 2008. 12. 11

Accordingly, an object of the present invention is to improve the reliability of the process by controlling the formation of precipitates when etching molybdenum alloy film, indium oxide film or molybdenum alloy film and indium oxide film used for TFT-LCD pixel electrode. To improve the durability of the process equipment, to provide an etchant composition that can minimize the copper corrosion of the bottom source drain.

In order to achieve the above object, the present invention is 5 to 25% by weight of hydrogen peroxide, 0.1 to 2% by weight of corrosion inhibitor, 0.1 to 2% by weight of fluorine compound, 0.1 to 2% by weight relative to the total weight of the composition A molybdenum alloy film, an indium oxide film, or a molybdenum alloy film and an indium oxide film including an chlorine compound, 0.1 to 5% by weight of an overwater stabilizer and water such that the total weight of the total composition is 100% by weight is provided.

The present invention provides an etching liquid composition for multiple films of a molybdenum alloy film, an indium oxide film, or a molybdenum alloy film and an indium oxide film used for a TFT-LCD pixel electrode, thereby etching the molybdenum alloy film, an indium oxide film, or a molybdenum alloy film and an indium oxide film. In this case, by controlling the precipitates that may be generated, the etching process of the pixel electrode may be improved and the durability of the etching equipment may be improved, thereby stably performing the etching process. In addition, even a small amount of corrosion inhibitor combination can improve the copper corrosion protection of the lower source drain.

1 is a photograph of a substrate surface observed with a scanning electron microscope after etching the molybdenum titanium alloy film with an etchant composition of Example 11 of the present invention.
FIG. 2 is a photograph of a substrate surface observed with a scanning electron microscope after etching an indium tin oxide film with an etchant composition of Example 11 of the present invention.
3 is a photograph of the surface of a substrate observed with a scanning electron microscope after treating a copper / molybdenum alloy film with the etchant composition of Example 11 of the present invention.
4 is a surface photograph of a substrate observed with a scanning electron microscope after treating a copper / molybdenum alloy film with an etchant composition of Comparative Example 1. FIG.
FIG. 5 is a photograph of the chemical solution when the molybdenum titanium alloy and the indium tin oxide were added to the etching solution composition of Example 11 of 1,000 ppm each, followed by stirring.
FIG. 6 is a photograph of a chemical solution in which precipitates are generated when molybdenum titanium alloy and indium tin oxide are added 1,000 ppm in the etching solution composition of Comparative Example 1, respectively, and then stirred.

As the pixel electrode of the TFT-LCD, a single film of molybdenum alloy film and an indium oxide film or multiple films of molybdenum alloy film and indium oxide film is used. Since the formed multiple films can be etched, multiple films made of molybdenum alloy film and indium oxide film and molybdenum alloy film and indium oxide film can be etched with the same etching solution, thereby simplifying etching equipment and the like, and further improving the TFT-LCD manufacturing process. There are advantages such as simplicity.

The molybdenum alloy film may be an alloy with various other metals, preferably a titanium alloy, and the indium oxide film may be an indium tin oxide film (ITO) or an indium zinc oxide film (IZO).

The etching liquid composition for etching the molybdenum alloy film, the indium oxide film or the molybdenum alloy film and the indium oxide film constituting the pixel electrode is 5 to 25% by weight of hydrogen peroxide, 0.1 to 2% by weight of the corrosion inhibitor, 0.1 to 2 wt% of the fluorine-containing compound, 0.1 to 2 wt% of the chlorine-containing compound, 0.1 to 5 wt% of the water stabilizer, and water so that the total weight of the total composition is 100 wt%.

In the etchant composition according to the present invention, the hydrogen peroxide serves as a main oxidant of the molybdenum alloy. The hydrogen peroxide is preferably included 5 to 25% by weight relative to the total weight of the composition, when included in less than 5% by weight is not preferable because the oxidizing power of the molybdenum alloy may not be sufficient, the etching is not performed, 25% by weight When included in excess, excessive etching may occur in the lower layer of the pixel electrode or the like, which is not preferable.

The corrosion inhibitor serves to prevent etching of the copper film used as the source drain electrode, which may occur due to cracks in the contact hole of the pixel electrode and the source drain electrode and the insulating layer during the pixel electrode etching process. The corrosion inhibitor is preferably included in an amount of 0.1 to 2% by weight based on the total weight of the composition, when included in less than 0.1% by weight is not enough corrosion protection for the copper film to prevent corrosion of the copper film used as a source drain electrode It is not preferable because it is difficult, and when included in excess of 2% by weight, the corrosion resistance of the copper film is excellent, but the etching rate of the molybdenum alloy film, the indium oxide film, or the molybdenum alloy film and the indium oxide film that constitute the pixel electrode is increased. It is not preferable because it may be lowered.

As the corrosion inhibitor, a cyclic heteroaromatic compound, a cyclic heteroaliphatic compound or a polyhydric alcohol may be used. Specifically, as the ring heteroaromatic compound, furan, thiophene, pyrrole, oxazole, thiazole, imidazole, pyrazole, triazole, tetrazole, benzofuran, benzothiophene, indole, benzothiazole, benzimidazole , Benzopyrazole, aminotetrazole, methyl tetrazole, tolutriazole, hydrotolutriazole or hydroxy tolutriazole, and the like, and the cyclic heteroaliphatic compound piperazine, methylpiperazine, hydroxylethyl pipe Ragine, pyrrolidine, or alloxane, and the like. The polyhydric alcohols include aromatic polyhydric alcohols such as gallic acid, methyl gallate, ethyl gallate, propyl gallate or butyl gallate, or glycerol, erythritol, sorbitol, and mannitol. Or linear polyhydric alcohols such as xylitol. The ring heteroaromatic compound, the ring heteroaliphatic compound or the polyhydric alcohols may be used alone or in combination of two or more.

The fluorine-containing compound of the present invention acts as a main etchant for the molybdenum alloy film and the indium oxide film and increases the etching rate and removes residues. The fluorine-containing compound is preferably included in an amount of 0.1 to 2% by weight based on the total weight of the composition. When the content of the fluorine compound is less than 0.1% by weight, the etching rate may be slow and residues of the molybdenum alloy film and the indium oxide film may occur after etching. If it is included in an amount exceeding 2% by weight, the etching may be excessively performed on the copper film forming the insulating film and the source drain electrode as the lower film, which is not preferable.

Said fluorinated compound is dissociated F ^- and HF ₂ ^- to a compound that can, preferably HF, NaF, KF, AlF _3, HBF _4, NH ₄ F, NH ₄ HF _2, NaHF _2, KHF ₂ or NH ₄ BF ₄ etc. can be mentioned, 1 type (s) or 2 or more types can be used together.

The chlorine-containing compound not only controls the formation of precipitates, but also works with copper preservatives to increase the corrosion protection of the preservatives against copper. When the molybdenum alloy film and the indium oxide film are etched in an etching solution containing only hydrogen peroxide, a corrosion inhibitor, and a fluorine-containing compound, a decrease in the durability of the etching equipment is inevitable due to the precipitates formed, but when the chlorine compound is added, the molybdenum alloy film Even if the indium oxide film is etched, no precipitate is generated, and thus the durability of the etching equipment can be improved. In addition, when the corrosion inhibitor and the chlorine compound are used together, there is an effect of increasing the corrosion protection against copper as compared to the case of using the corrosion inhibitor alone, it is possible to reduce the amount of the corrosion inhibitor. In addition, the corrosion inhibitor is one of the main causes of the generation of precipitate, so if the amount of the corrosion inhibitor is reduced, the precipitation generation control becomes easier.

In the present invention, the chlorine-containing compound is preferably included in an amount of 0.1 to 2% by weight relative to the total weight of the composition, and when included in less than 0.1% by weight is not preferred because it is not easy to control the formation of precipitates, 2% by weight When included in excess, the etching rate may be slow, which is undesirable.

The chlorine-containing compound is a compound capable of dissociating to give Cl ⁻ ions, and preferably NaCl, FeCl ₃ or AlCl ₃ , and one or two or more thereof may be used together.

The hydrogen peroxide stabilizer acts to increase the maximum number of treatments of the etching solution by controlling the decomposition reaction of the hydrogen peroxide even when the metal ion content in the chemical solution increases due to the increase in the number of treatments as the etching is repeated. The overwater stabilizer is preferably included in an amount of 0.1 to 5% by weight, and more preferably 0.1 to 2% by weight, based on the total weight of the composition. When the perwater stabilizer is included in less than 0.1% by weight it is not preferable because it can not effectively suppress the perhydrolysis reaction, and when included in excess of 5% by weight may not be preferable because the etching rate may be slow.

As the overwater stabilizer, a chelating agent or glycol compound capable of stabilizing metal ions may be used.

The chelating agent is iminodiacetic acid, nitrilotriacetic acid, ethylenediaminetetraacetic acid, diethylenetrinitrilepentaacetic acid, aminotri (methylenephosphonic acid), 1-hydroxyethane (1,1-diylbisproponic acid), ethylenediamine Tetra (methyleneproponic acid), diethylenetriaminepenta (methylenephosphonic acid), sarcosine, alanine, aminobutyric acid, glutamic acid and glycine may be any one or more selected from the group consisting of ethylene glycol, propylene glycol , Polyethylene glycol and polypropylene glycol may be any one or more selected from the group consisting of, more preferably, polyethylene glycol having a molecular weight of 1,000 or less. When the glycols are used as the chelating agent, when the molecular weight exceeds 1,000, the amount of bubbles is increased, which is not suitable for use in etching equipment using a spray.

Although it does not specifically limit as said water, It is preferable to use deionized water, and it is more preferable to use deionized water of 18 dl / cm or more of specific resistance value which is the degree to which ion was removed in water.

When etching the multi-layer pixel electrode of the molybdenum alloy film, indium oxide film or molybdenum alloy film and the indium oxide film as the pixel electrode using the etchant composition according to the present invention, it is possible to minimize the corrosion of the copper, the lower source drain electrode, Even when the metal film is etched with the same etching solution, less precipitates are generated, which improves the durability of the etching equipment and the reliability of the pixel electrode etching process, thereby improving the productivity of the TFT-LCD array substrate for liquid crystal display devices.

Hereinafter, the present invention will be described in more detail with reference to Examples, but these Examples are merely illustrative of the present invention, and the content of the present invention is not limited to the following Examples.

Example  1 to 20 and Comparative Example  1 to 4: Etchant  Preparation of the composition

Each component was mixed with the component contents shown in Table 1 below to prepare the compositions of Examples 1 to 20 according to the present invention and the compositions of Comparative Examples 1 to 4 for comparing the performance of the present invention. The component contents in Table 1 below are weight percent values.

Example
And
Comparative Example Hydrogen peroxide
[weight%] Corrosion inhibitor
[weight%] Fluorine compound
[weight%] Chlorine-containing compound
[weight%] Fruit tree stabilizer
[weight%] water
[weight %] Example 1 10 TAZ 1.0 NH ₄ HF ₂ 0.5 NaCl 1.0 IDA 1.0 86.5 Example 2 10 TAZ 1.0 NH ₄ HF ₂ 0.5 NaCl 1.5 IDA 1.0 86.0 Example 3 10 TAZ 1.0 NH ₄ HF ₂ 0.5 NaCl 1.0 IDA 1.5 86.0 Example 4 10 TAZ 1.5 NH ₄ HF ₂ 0.5 NaCl 1.0 IDA 1.0 86.0 Example 5 10 TAZ 1.5 NH ₄ HF ₂ 0.5 NaCl 1.5 IDA 1.0 85.5 Example 6 15 TAZ 1.0 NH ₄ HF ₂ 0.5 NaCl 1.0 IDA 1.0 81.5 Example 7 15 TAZ 1.0 NH ₄ HF ₂ 0.5 NaCl 1.5 IDA 1.0 81.0 Example 8 15 TAZ 1.0 NH ₄ HF ₂ 0.5 NaCl 1.0 IDA 1.5 81.0 Example 9 15 TAZ 1.5 NH ₄ HF ₂ 0.5 NaCl 1.0 IDA 1.0 81.0 Example 10 15 TAZ 1.5 NH ₄ HF ₂ 0.5 NaCl 1.5 IDA 1.0 80.5 Example 11 20 TAZ 1.0 NH ₄ HF ₂ 0.5 NaCl 1.0 IDA 1.0 76.5 Example 12 20 TAZ 1.0 NH ₄ HF ₂ 0.5 NaCl 1.5 IDA 1.0 76.0 Example 13 20 TAZ 1.0 NH ₄ HF ₂ 0.5 NaCl 1.0 IDA 1.5 76.0 Example 14 20 TAZ 1.5 NH ₄ HF ₂ 0.5 NaCl 1.0 IDA 1.0 76.0 Example 15 20 TAZ 1.5 NH ₄ HF ₂ 0.5 NaCl 1.5 IDA 1.0 75.5 Example 16 25 TAZ 1.0 NH ₄ HF ₂ 0.5 NaCl 1.0 IDA 1.0 71.5 Example 17 25 TAZ 1.0 NH ₄ HF ₂ 0.5 NaCl 1.5 IDA 1.0 71.0 Example 18 25 TAZ 1.0 NH ₄ HF ₂ 0.5 NaCl 1.0 IDA 1.5 71.0 Example 19 25 TAZ 1.5 NH ₄ HF ₂ 0.5 NaCl 1.0 IDA 1.0 71.0 Example 20 25 TAZ 1.5 NH ₄ HF ₂ 0.5 NaCl 1.5 IDA 1.0 70.5 Comparative Example 1 20 TAZ 1.0 NH ₄ HF ₂ 0.5 - - - - 78.0 Comparative Example 2 20 TAZ 1.5 NH ₄ HF ₂ 0.5 - - - - 77.5 Comparative Example 3 20 TAZ 1.5 NH ₄ HF ₂ 1.0 - - - - 77.0 Comparative Example 4 20 TAZ 1.5 - - - - - - 78.5

TAZ: Triazole, IDA: Iminodiacetic acid

Experimental Example  : Etchant  Of the composition Etching  Performance testing

In order to evaluate the effect of the etchant according to the present invention, a molybdenum titanium alloy film having a thickness of 300 kPa as a molybdenum alloy film, an indium tin oxide film having a thickness of 300 kPa as an indium oxide film, and a thickness of 100 kPa as a copper / molybdenum alloy film were used. A molybdenum titanium alloy film and a copper film having a thickness of 3000 kPa were deposited, respectively, and then subjected to a photolithography process to form a pattern to prepare a specimen.

Etching was performed in the sprayable equipment (Mini-etcher ME-001) using the etchant composition of Examples 1 to 20 and the etchant composition of Comparative Examples 1 to 3. After etching, residues of the molybdenum alloy film and the indium oxide film and corrosion of the copper film were observed using a scanning electron microscope (S-4800, manufactured by Hitachi, Inc.). The results are shown in Table 2, and FIGS. In the etching liquid composition of Example 11 of the present invention, a molybdenum titanium alloy film, an indium tin oxide film, and a copper / molybdenum alloy film were respectively etched and photographs of the substrate surface observed with a scanning electron microscope are shown. The copper / molybdenum alloy film was etched using the etchant composition of 1 and the photograph of the substrate surface observed with the scanning electron microscope was shown.

Referring to FIG. 1, the etching solution composition of Example 11 of the present invention is excellent in etching characteristics with respect to the molybdenum titanium alloy film and does not leave a residue of the molybdenum titanium alloy film. Referring to FIG. 2, the present invention It can be seen that the etching solution composition of Example 11 has excellent etching characteristics with respect to the indium tin oxide film (ITO) and does not leave a residue of the indium tin oxide film (ITO). In addition, referring to FIG. 3, it can be seen that the corrosion of the copper / molybdenum alloy film by the etchant composition did not occur, while referring to FIG. 4, the corrosion of the copper / molybdenum alloy film was caused by the etchant composition. can confirm.

In addition, in order to confirm whether precipitates were formed by repeated etching of the molybdenum alloy film and the indium oxide film, 1,000 ppm of molybdenum titanium alloy powder and indium tin oxide powder were added to the etching solution, and then stirred for 12 hours to confirm whether precipitates were formed. After the results are shown in Table 2 together, 1,000 ppm of molybdenum titanium alloy and indium tin oxide were added to the etchant composition of Example 11 and the comparative example 1 of FIGS. 5 and 6, respectively, and then stirred. The photograph of the subsequent chemical | medical solution is shown.

Referring to FIG. 5, it can be seen that the chemical reaction for producing a precipitate was minimized or not occurred between the etching solution composition of Example 11 of the present invention, the molybdenum alloy film, and the indium oxide. Referring to FIG. 6, the comparative example 1 of FIG. The etchant composition may confirm that precipitates are generated by a chemical reaction between the molybdenum alloy film and the indium oxide film.

Example
And
Comparative Example Molybdenum titanium alloy film residue generation Indium tin oxide residue Copper film corrosion Precipitate generation Example 1 X X X X Example 2 X X X X Example 3 X X X X Example 4 X X X X Example 5 X X X X Example 6 X X X X Example 7 X X X X Example 8 X X X X Example 9 X X X X Example 10 X X X X Example 11 X X X X Example 12 X X X X Example 13 X X X X Example 14 X X X X Example 15 X X X X Example 16 X X X X Example 17 X X X X Example 18 X X X X Example 19 X X X X Example 20 X X X X Comparative Example 1 X X O O Comparative Example 2 X X O O Comparative Example 3 X X O O Comparative Example 4 O O O O

<Test Result Display Criteria>

X: no residue, no copper film corrosion, no precipitate.

O: residue is present, copper film is corroded, and precipitates are formed.

As can be seen in Table 2, Examples 1 to 20, which are the etchant compositions according to the present invention, had no residue of the molybdenum alloy film and the indium oxide film, and showed good results without corrosion of the copper film. In addition, even when the molybdenum alloy and the indium oxide film were repeatedly etched, good results without precipitates were obtained.

On the other hand, the etchant composition of Comparative Examples 1 to 3 did not generate a residue after etching the molybdenum alloy film and the indium oxide film, but there was corrosion on the copper film, it was confirmed that the precipitate is difficult to apply to the process. In addition, the etchant composition of Comparative Example 4 generated a residue after etching the molybdenum alloy film and the indium oxide film, there was a corrosion on the copper film, it was confirmed that it is difficult to apply to the process because the precipitate is generated.

From the above results, when the molybdenum alloy film and the indium oxide film used for the pixel electrode are etched, when the etching liquid composition according to the present invention is used, the lower source drain is maintained without attack on the etching equipment by controlling the formation of precipitates. It can be seen that the corrosion of copper can be minimized.

Claims (9)

5 to 25 wt% hydrogen peroxide, 0.1 to 2 wt% corrosion inhibitor, 0.1 to 2 wt% fluorine-containing fluorine compound, 0.1 to 2 wt% chlorine-containing chlorine compound, 0.1 to 5 wt%, relative to the total weight of the composition Stabilizer and water so that the total weight of the total composition is 100% by weight, containing no sulfates or boron-based compounds, wherein the chlorine-containing compound is at least one selected from the group consisting of NaCl, FeCl ₃ and AlCl ₃ A molybdenum alloy film, an indium oxide film or a molybdenum alloy film and an indium oxide film, the etching liquid composition for multiple films, characterized in that.
The method of claim 1,
The corrosion inhibitor is a molybdenum alloy film, indium oxide film or molybdenum alloy film and indium oxide film of the etching liquid composition, characterized in that any one or more selected from the group consisting of heterocyclic aromatic compound, heterocyclic aliphatic compound and polyhydric alcohols.
The method of claim 1,
The fluorine-containing compound is molybdenum, characterized in that any one or more selected from the group consisting of HF, NaF, KF, AlF ₃ , HBF ₄ , NH ₄ F, NH ₄ HF ₂ , NaHF ₂ , KHF ₂ and NH ₄ BF ₄ . An etching solution composition for a multilayer film of an alloy film, an indium oxide film, or a molybdenum alloy film and an indium oxide film.
delete The method of claim 1,
The over-water stabilizer is a molybdenum alloy film, indium oxide film or molybdenum alloy film and indium oxide film of the etching liquid composition, characterized in that any one or more selected from the group consisting of chelating agents or glycols.
3. The method of claim 2,
The heterocyclic aromatic compounds are furan, thiophene, pyrrole, oxazole, thiazole, imidazole, pyrazole, triazole, tetrazole, benzofuran, benzothiophene, indole, benzothiazole, benzimidazole, benzopyra Sol, aminotetrazole, methyl tetrazole, tolutriazole, hydrotolutriazole and hydroxy tolutriazole, cyclic heteroaliphatic compounds are piperazine, methylpiperazine, hydroxylethylpiperazine, pyrrolidine and alloxane At least one selected from the group consisting of,
The polyhydric alcohols are any one or more selected from the group consisting of gallic acid, methyl gallate, ethyl gallate, propyl gallate, butyl gallate, glycerol, erythritol, sorbitol, mannitol and xylitol, and an indium oxide film Or an etching liquid composition for a multilayer film of molybdenum alloy film and indium oxide film.
The method of claim 5,
The chelating agent is iminodiacetic acid, nitrilotriacetic acid, ethylenediaminetetraacetic acid, diethylenetrinitrilepentaacetic acid, aminotri (methylenephosphonic acid), 1-hydroxyethane (1,1-diylbisproponic acid), ethylenediamine At least one selected from the group consisting of tetra (methyleneproponic acid), diethylenetriaminepenta (methylenephosphonic acid), sarcosine, alanine, aminobutyric acid, glutamic acid, and glycine,
The glycols are molybdenum alloy film, indium oxide film or molybdenum alloy film and indium oxide film of the etching liquid composition, characterized in that any one or more selected from the group consisting of ethylene glycol, propylene glycol, polyethylene glycol and polypropylene glycol.
The method of claim 7, wherein
The glycols are molybdenum alloy film, indium oxide film or molybdenum alloy film and indium oxide film, the etching liquid composition for multi-layer film characterized in that the polyethylene glycol having a molecular weight of 1,000 or less.
The method of claim 1,
The indium oxide film is an indium tin oxide film or an indium zinc oxide film, characterized in that the molybdenum alloy film, indium oxide film or molybdenum alloy film and the indium oxide film multi-film etching liquid composition.

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