KR20130128536A - Light emitting device array and illuminating system including the same - Google Patents

Light emitting device array and illuminating system including the same Download PDF

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KR20130128536A
KR20130128536A KR1020120052324A KR20120052324A KR20130128536A KR 20130128536 A KR20130128536 A KR 20130128536A KR 1020120052324 A KR1020120052324 A KR 1020120052324A KR 20120052324 A KR20120052324 A KR 20120052324A KR 20130128536 A KR20130128536 A KR 20130128536A
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light emitting
layer
semiconductor layer
electrode
conductive semiconductor
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KR1020120052324A
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Korean (ko)
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KR101915214B1 (en
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이대희
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엘지이노텍 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Embodiments include at least two light emitting structures disposed adjacent to each other and including a first conductive semiconductor layer and a second conductive semiconductor layer and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. ; First electrodes electrically connected to first conductive semiconductor layers of the respective light emitting structures; And second electrodes electrically connected to second conductive semiconductor layers of the respective light emitting structures, and a transparent conductive layer disposed between the first conductive semiconductor layer and the first electrode. do.

Description

LIGHT EMITTING DEVICE ARRAY AND ILLUMINATING SYSTEM INCLUDING THE SAME}

Embodiments relate to an array of light emitting devices and an illumination system comprising the same.

Light emitting devices such as light emitting diodes or laser diodes using semiconductors of Group 3-5 or 2-6 compound semiconductor materials of semiconductors have various colors such as red, green, blue, and ultraviolet rays due to the development of thin film growth technology and device materials. It is possible to realize efficient white light by using fluorescent materials or combining colors, and it has low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps. Has an advantage.

Therefore, a transmission module of the optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting element capable of replacing a fluorescent lamp or an incandescent lamp Diode lighting, automotive headlights, and traffic lights.

The light emitting device emits light having energy determined by an energy band inherent in a material in which electrons injected through the first conductive semiconductor layer and holes injected through the second conductive semiconductor layer meet each other to form an active layer (light emitting layer). do. In the light emitting device package, the phosphor is excited by the light emitted from the light emitting device to emit light having a longer wavelength region than the light emitted from the active layer.

1 is a view showing a conventional light emitting device array.

In the conventional light emitting device array 100, a plurality of light emitting structures 120 are disposed on a substrate 110. The light emitting structures 120 include a first conductive semiconductor layer 122, an active layer 124, and a second conductive layer. Type semiconductor layer 126.

A passivation layer 190 is disposed at an edge of each light emitting structure 120, and a first electrode 170 is disposed outside the passivation layer 190, and the first electrode 170 is a passivation layer 190. It extends inwardly and is in electrical contact with the first conductivity-type semiconductor layer 122. In the illustrated light emitting device array 100, the substrate 110 serves as a second electrode. Light emitted from the active layer 124 may mainly travel toward the upper direction of the light emitting structure 120 in FIG. 1.

However, the above-described conventional light emitting device array 100 has the following problems.

The first electrode 170 disposed around the passivation layer 190 may be disposed to have a thin thickness. As shown in the drawing, a part of the first electrode 170 may be opened in the 'A' region. In this case, when the first electrode 170 is opened, no current is supplied to the first conductivity-type semiconductor layer 122, so that electrons and holes are not coupled in the active layer 124, thereby not emitting light.

In particular, in the light emitting device array 100 as shown in the drawing, adjacent light emitting structures 120 are connected to each other in series, so that the opening of one first electrode 170 does not allow current to flow through the entire plurality of light emitting structures 120. You may not.

The embodiment is intended to improve the luminous efficiency of the light emitting device array according to the opening of the electrode.

Embodiments include at least two light emitting structures disposed adjacent to each other and including a first conductive semiconductor layer and a second conductive semiconductor layer and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. ; First electrodes electrically connected to first conductive semiconductor layers of the respective light emitting structures; And second electrodes electrically connected to second conductive semiconductor layers of the respective light emitting structures, and a transparent conductive layer disposed between the first conductive semiconductor layer and the first electrode. do.

The light emitting device array may further include a passivation layer surrounding the light emitting structure, and the first electrode may extend from 0.8 micrometers to 1.2 micrometers from the passivation layer to contact the first conductive semiconductor layer.

Adjacent light emitting structures may be disposed at least 10 micrometers apart.

The passivation layer and the first electrode disposed around the adjacent light emitting structure may be disposed at least 5 micrometers apart.

The transparent conductive layer may be disposed at a thickness of 1 nanometer to 5 nanometers.

Unevenness is disposed on at least a portion of the surface of the light emitting structure, and the depth of the unevenness may be at least 0.2 micrometers.

The average depth of the unevenness may be 0.8 micrometers to 1.2 micrometers.

The first electrode may be inserted into the surface of the light emitting structure by at least the depth of the irregularities.

The light emitting device array may further include a current blocking layer disposed on the second conductivity type semiconductor layer.

The first electrode in electrical contact with the first conductivity-type semiconductor layer of the n-1 light emitting structure is in electrical contact with the second electrode in electrical contact with the second conductivity-type semiconductor layer of the nth light emitting structure, and the nth The first electrode in electrical contact with the first conductive semiconductor layer of the light emitting structure may be in electrical contact with the second electrode in electrical contact with the second conductive semiconductor layer of the n + 1 light emitting structure.

The first electrode may be disposed to extend to the side of the light emitting structure with the transparent electrode layer interposed therebetween.

The first electrode and the second electrode electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer in one light emitting structure may be disposed with an etch stop layer therebetween.

An etch stop layer may be disposed between the second electrodes electrically connected to respective second conductive semiconductor layers of light emitting structures adjacent to each other.

An etch stop layer may contact the passivation layer.

Another embodiment provides an illumination system including the above-described light emitting element array.

In the light emitting device according to the present exemplary embodiment, since the transparent conductive layer is disposed inside the electrode around each light emitting structure, a current may be supplied to the light emitting structure even when the electrode is defective in some regions.

1 is a view showing a conventional light emitting device array,
2 is a view showing a light emitting device array according to the embodiment;
3A to 3N illustrate an embodiment of a method of manufacturing a light emitting device array;
4 is a view showing another embodiment of a light emitting device array,
5 is a view illustrating an embodiment of a light emitting device package in which a light emitting device array is disposed;
6 is a view showing an embodiment of a lighting device in which a light emitting element array is disposed;
7 is a diagram illustrating an embodiment of an image display apparatus in which a light emitting device array is disposed.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG.

In the description of the embodiment according to the present invention, in the case of being described as being formed "on or under" of each element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

2 is a view showing a light emitting device array according to an embodiment.

According to the present embodiment, a vertical light emitting device is disposed, and a plurality of light emitting structures 220 are disposed adjacent to each other, and each light emitting structure 220 has a first conductivity type semiconductor layer 222 and a second conductivity type. And an active layer 224 disposed between the semiconductor layer 226 and the first conductive semiconductor layer 222 and the second conductive semiconductor layer 226. Two or more light emitting structures 220 may be disposed adjacent to each other.

The first conductive semiconductor layer 222 may be formed of a semiconductor compound. The first conductive semiconductor layer 222 may be implemented with compound semiconductors such as Groups 3-5 and 2-6, and may be doped with the first conductive dopant. When the first conductive semiconductor layer 222 is an N-type semiconductor layer, the first conductive dopant may be an N-type dopant, and may include Si, Ge, Sn, Se, or Te, but is not limited thereto.

The first conductive semiconductor layer 222 includes a semiconductor material having a composition formula of Al x In y Ga (1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). can do. The first conductive semiconductor layer 222 may be formed of any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP.

Unevenness may be formed on the surface of the light emitting structure 220, that is, the surface of the first conductivity-type semiconductor layer 222 to increase the light extraction effect. In addition, the first electrode 270 to be described later may pass through the passivation layer 290 to be electrically connected to the uneven surface of the first conductive semiconductor layer 222.

The first electrode 270 may be made of a conductive material, and specifically, may include at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au). It can be formed into a single layer or a multi-layer structure.

The active layer 224 has energy inherent in the material of the electrons injected through the first conductive semiconductor layer 222 and holes injected through the second conductive semiconductor layer 226 formed thereafter to meet each other to form the active layer 224. It is a layer that emits light with energy determined by the band. Here, holes may be injected through the first conductive semiconductor layer 222, and electrons may be injected through the second conductive semiconductor layer 226.

The active layer 224 may be a double heterojunction structure, a single quantum well structure, a multi quantum well (MQW), a quantum-wire structure, or a quantum dot structure Or at least one of them may be formed. For example, the active layer 120 may be injected with trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and trimethyl indium gas (TMIn) to form a multi-quantum well structure. It is not limited to this.

InGaN / InGaN, InGaN / InGaN, InAlGaN / GaN, InAlGaN / InAlGaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) / AlGaP, and the well layer / barrier layer of the active layer 224 may be formed of, But it is not limited thereto. The well layer may be formed of a material having a bandgap narrower than the bandgap of the barrier layer.

A conductive clad layer (not shown) may be formed on and / or below the active layer 224. The conductive clad layer may be formed of a semiconductor having a band gap wider than the band gap of the barrier layer of the active layer. For example, the conductive clad layer may include GaN, AlGaN, InAlGaN, superlattice structure, or the like. In addition, the conductive clad layer may be doped with n-type or p-type.

The second conductive semiconductor layer 226 may be formed of a semiconductor compound. The second conductive semiconductor layer 226 may be implemented with compound semiconductors such as Groups 3-5 and 2-6, and may be doped with the second conductive dopant. For example, it may include a semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). When the second conductive semiconductor layer 226 is a P-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, Ba, or the like as a P-type dopant.

The passivation layer 290 may be disposed around the light emitting structure 220, and the passivation layer 290 may be disposed covering the side and the top of the light emitting structure 220 at a predetermined thickness.

The passivation layer 290 may be made of an insulating material, and the insulating material may be made of an oxide or nitride that is nonconductive. As an example, the passivation layer 290 may be formed of a silicon oxide (SiO 2 ) layer, an oxynitride layer, or an aluminum oxide layer.

The transparent conductive layer 275 may be disposed between the passivation layer 290 and the first electrode 270. The transparent conductive layer 275 is made of a conductive material, but may be made of a translucent material to prevent reflection of light emitted from the active layer 224. For example, a transparent conducting oxide such as indium tin oxide (ITO) or ZnO It can be made of a series of materials.

Since the first electrode 270 extends from the bottom surface of the passivation layer 290 to the surface of the uneven structure of the surface of the first conductivity type semiconductor layer 222, the first electrode 270 may be a passivation layer ( 290 may extend from 0.8 to 1.2 micrometers from below.

In FIG. 2, the height h is a numerical value obtained by adding the thickness of the first electrode 270, the thickness of the transparent conductive layer 275, the thickness of the passivation layer 290, and the depth of the uneven structure from the top of the first electrode 270. Can be.

The transparent conductive layer 275 may be disposed at a thickness t 2 of 1 nanometer to 5 nanometers. If the thickness t 2 of the transparent conductive layer 275 is too thin, it may not be sufficient to supply a current to the first conductivity type semiconductor layer 222 in the case of poor openness of the first electrode 270, and is too thick. Even a small amount of surface light transmittance can be reduced.

In addition, the width t 1 of the first electrode 270 may be 8 to 20 micrometers. If the width t 1 is too thin, the current supply may be reduced, and if the thickness t 1 is too thick, the light emitted from the active layer 224 may be reduced. The reflection of can be increased.

The above-mentioned depth of the unevenness must be at least 0.2 micrometer or more to increase the light extraction effect, and in FIG. 2, when the average depth of the unevenness is 0.8 micrometer to 1.2 micrometers, the light extraction efficiency may be maximum.

In FIG. 2, the distance b between adjacent light emitting structures 220 may be 10 micrometers or more. The above-described distance b is necessary for preventing contact between the light emitting structures 220 and for arranging the passivation layer 290 or the transparent conductive layer 275 and the first electrode 270, and the distance b is increased too much. When the adjacent light emitting structure 220 is disposed, the light emitting efficiency may be reduced.

In FIG. 2, a passivation layer 290, a first electrode 270, a transparent conductive layer 275, and the like are disposed on side surfaces of the adjacent light emitting structure 220, and the adjacent passivation layer 290 and the first electrode 270 are disposed. The distance a between can be at least 5 micrometers. The distance a described above takes into account the process margin.

In the present exemplary embodiment, the first conductive semiconductor layer 222 may be an N-type semiconductor layer, and the second conductive semiconductor layer 226 may be a P-type semiconductor layer. In addition, an N-type semiconductor layer (not shown) may be formed on the second conductive semiconductor layer 226 when a semiconductor having a polarity opposite to that of the second conductive type, for example, the second conductive semiconductor layer is a P-type semiconductor layer. Accordingly, the light emitting structure can be implemented by any one of an N-P junction structure, a P-N junction structure, an N-P-N junction structure, and a P-N-P junction structure.

The second electrode is in electrical contact with the second conductive semiconductor layer 226. Hereinafter, the structure of the second electrode and the like will be described.

The ohmic layer 235 and the reflective layer 230 may be disposed in contact with the second conductivity-type semiconductor layer 226. The ohmic layer 235 may improve contact characteristics of the second conductive semiconductor layer 226 and the reflective layer 230.

The ohmic layer 235 may be about 200 angstroms thick. The ohmic layer 235 may include ITO, indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), and aluminum (AZO). zinc oxide), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZO (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / At least of ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, Hf It may be formed to include one, and is not limited to these materials.

The reflective layer 230 may be formed of a metal layer including aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh), or an alloy containing Al, Ag, Pt, or Rh. . Aluminum or silver may effectively reflect light generated from the active layer 224 to greatly improve the light extraction efficiency of the light emitting device.

The above-described ohmic layer 235 and the reflective layer 230 may be made of a conductive material and serve as a second electrode.

The ohmic layer 235 may be disposed to correspond to each light emitting structure 220, and the etch stop layer 280 may be disposed between the adjacent ohmic layers 235.

The etch stop layer 280 may prevent electrical short circuits between different kinds of electrodes between adjacent light emitting structures 220, and may serve to stop etching of the light emitting structures 220 in a manufacturing process described later. That is, the reflective layer 230 serving as the first electrode 270 and the second electrode in one light emitting structure 220 is disposed with the etch stop layer 280 interposed therebetween. In addition, the etch stop layer 280 may contact the passivation layer 290 to achieve the above-described insulation effect.

The first electrode 270 extends from the surface of the first conductivity-type semiconductor layer 222 to the side of the passivation layer 290, extending between the etch stop layer 280 disposed corresponding to the adjacent light emitting structure 220. And is in electrical contact with the adjacent reflective layer 230. Due to the above structure, the light emitting device array according to the embodiment may have a series structure in which the first electrode 270 of one light emitting structure 220 is in electrical contact with the second electrode of the adjacent light emitting structure 220. .

In addition, a first capping layer 240 surrounds the reflective layer 230, the transparent conductive layer 275 and the first electrode 270 disposed through the etch stop layer 280. The first capping layer 240 may electrically connect the reflective layers 230 connected to adjacent light emitting structures to the conductive layers 275 and the first electrodes 270, and the reflective layers 230 and the conductive layers 275 described above. And the first electrode 270 may be fixed. The first capping layer 240 may be made of any one material of Ti, Ni, Au, W, and Pt, or may be formed of multiple layers.

In addition, the adjacent first capping layer 240 may be electrically separated by the insulating layer 245. The insulating layer 245 may be made of an insulating material. For example, the insulating layer 245 may be made of silicon oxide (SiO 2 layer, oxynitride, aluminum oxide, or the like).

The second capping layer 250 may be disposed while supporting the first capping layer 240 and the insulating layer 245. The second capping layer 250 may be made of a conductive material, and may be disposed while supporting the first capping layer 240 and the insulating layer 245.

In addition, the second capping layer 250 may be coupled to the support substrate 260 through the bonding layer 255.

The bonding layer 255 combines the second capping layer 250 and the support substrate 260 described above, and includes gold (Au), tin (Sn), indium (In), aluminum (Al), silicon (Si), It may be formed of a material selected from the group consisting of silver (Ag), nickel (Ni) and copper (Cu) or alloys thereof.

The support substrate 260 may be made of a conductive material or an insulating material. When the support substrate 260 is made of a conductive material, it may be formed of a metal or a semiconductor material, for example, molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu), and aluminum (Al). It may be made of a material selected from the group consisting of or alloys thereof, and also, gold (Au), copper alloy (Cu Alloy), nickel (Ni), copper-tungsten (Cu-W), carrier wafers (eg GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, Ga 2 O 3, etc.) may be optionally included.

In the light emitting device array according to the present exemplary embodiment, the transparent conductive layer 275 is disposed inside the first electrode 270 around the light emitting structure 220, so that the first electrode 270 is opened in some region. Current may be supplied to the first conductive semiconductor layer 222 through the transparent conductive layer 275.

3A to 3N illustrate an embodiment of a method of manufacturing a light emitting device array.

First, as shown in FIG. 3A, the buffer layer 215 and the light emitting structure 220 are grown on the substrate 210.

As the substrate 210, a conductive or non-conductive substrate may be used, and a buffer layer 215 may be grown between the first conductive semiconductor layer 222 and the substrate 210, and the lattice mismatch and thermal expansion coefficient of the material may be increased. It is to alleviate the difference. The material of the buffer layer 215 may be formed of at least one of Group III-V compound semiconductors, for example, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN.

The composition of the first conductive semiconductor layer 222 is the same as described above, and is N-type using a method such as chemical vapor deposition (CVD) or molecular beam epitaxy (MBE) or sputtering or hydroxide vapor phase epitaxy (HVPE). A GaN layer can be formed. In addition, the first conductive semiconductor layer 222 may include a silane containing n-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and silicon (Si) in the chamber. The gas SiH 4 may be injected and formed.

The composition of the active layer 224 is the same as described above, for example, the trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and trimethyl indium gas (TMIn) is injected into A well structure may be formed, but is not limited thereto.

The second conductive semiconductor layer 226 has the same composition as described above, and has a p-type such as trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and magnesium (Mg) in the chamber. Bicetyl cyclopentadienyl magnesium (EtCp 2 Mg) {Mg (C 2 H 5 C 5 H 4 ) 2 } including impurities may be implanted to form a p-type GaN layer, but is not limited thereto.

When the light emitting structure 220 is grown on the substrate 210 in FIG. 3A, nitrogen (N) may be directed toward the substrate 210 and gallium (Ga) may be disposed in the opposite direction within the light emitting structure 220. have.

As illustrated in FIG. 3B, an etch stop layer 280 is formed on the second conductivity-type semiconductor layer 226 of the light emitting structure 220. The etch stop layer 280 may be made of an insulating material, and may stop the etching of the light emitting structure in a dicing process of a device unit to be described later. The etch stop layer 280 may be patterned and disposed at predetermined intervals using the mask 295.

As shown in FIG. 3C, the ohmic layer 235 is disposed on the second conductive semiconductor layer 226. In this case, the ohmic layer 235 may be disposed to cover a portion of the edge of the etch stop layer 280 using the mask 295.

As shown in FIG. 3D, the reflective layer 230 is disposed on the ohmic layer 235. In this case, the reflective layer 230 may be disposed to cover a part of the edge of the visual stop layer 280 using the mask 295. The composition of the ohmic layer 235 and the reflective layer 230 is the same as described above, and may be formed by sputtering or electron beam deposition.

As illustrated in FIG. 3E, the first capping layer 240 is disposed on the etch stop layer 280 and the reflective layer 230. The first capping layer 240 may be formed by depositing a conductive material, and may pattern the first capping layer 240 using a mask 295. The patterning of the first capping layer 240 may prevent the second conductive semiconductor layer 226 of the adjacent light emitting structure 220 from being electrically connected.

3F, an insulating layer 245 is formed on the etch stop layer 280, the reflective layer 230, and the first capping layer 240. The insulating layer 245 may be patterned and disposed using a mask 295. A portion of the first capping layer 240 may be exposed. The exposed first capping layer 240 may be described later. Likewise, the support substrate 260 may be electrically connected. The insulating layer 245 can be formed by sputtering, electron beam evaporation, or the like.

As illustrated in FIG. 3G, the second capping layer 250 and the support substrate 260 may be formed on the first capping layer 240 and the insulating layer 245. The chemical metal deposition method, the bonding method using an etchant metal (Eutetic metal), or the like can be disposed using, or may be disposed by forming a separate bonding layer 255.

Then, the substrate 210 is separated as shown in FIG. 3H. The substrate 210 may be removed by a laser lift off (LLO) method using an excimer laser, or may be a dry or wet etching method.

For example, when the laser lift-off method focuses and irradiates excimer laser light having a predetermined wavelength toward the substrate 210, heat energy is applied to an interface between the substrate 210 and the light emitting structure 220. As the interface is concentrated and separated into gallium and nitrogen molecules, the substrate 210 is instantaneously separated at the portion where the laser light passes, and the buffer layer 215 may be separated together.

As shown in FIG. 3I, the light emitting structure 220 in which the substrate is separated is diced by element. In this case, each light emitting structure 220 may be etched using a mask (not shown). In the etching process, the etching may be stopped at the etch stop layer 280, and the etch stop layer 280 may be made of an insulating material so that the first surface of the light emitting structure 220 may be in contact with the material forming the etch stop layer 280. Electrical short circuit between the conductive semiconductor layer 222 and the second conductive semiconductor layer 226 can be prevented.

As shown in FIG. 3J, irregularities are formed on the surface of the first conductivity-type semiconductor layer 222, and a passivation layer 290 is formed on the surface of the light emitting structure 220. The uneven structure described above may be formed through dry etching or wet etching. The material of the passivation layer 290 is the same as described above, and may be formed on the surface of the etch stop layer 280 in addition to the surface of the light emitting structure 220.

3K, the passivation layer 290 and the etch stop layer 280 may be etched on one side of the light emitting structure 220 to expose a portion of the first capping layer 240.

3L, the transparent conductive layer 275 is disposed on the passivation layer 290 of the upper side and the one side of the light emitting structure 220, and the composition of the transparent conductive layer 275 is the same as described above. Do.

As illustrated in FIG. 3M, the transparent conductive layer 275 and the passivation layer 290 are etched to expose a portion of the second conductive semiconductor layer 222.

As shown in FIG. 3N, the first electrode 270 is formed on the transparent conductive layer 275. The material of the first electrode 270 is as described above, and may be in contact with the concave-convex structure on the surface of the first conductivity-type semiconductor layer 222 and may also be in contact with the first capping layer 240.

4 is a view showing another embodiment of a light emitting device array.

The light emitting device array according to the present embodiment is similar to the light emitting device array shown in FIG. 2, but a current blocking layer 237 is disposed under the second conductive semiconductor layer 226. The current blocking layer 237 may be made of an insulating material, and current may be prevented from being concentrated in a portion of the second conductive semiconductor layer 226. The current blocking layer 237 may be disposed in the central region of the second conductive semiconductor layer 226, and may uniformly supply electrons or holes supplied to the second conductive semiconductor layer 226 to the entire area.

In the present embodiment, three light emitting structures 220 are disposed.

Here, when the three light emitting structures are the n-1 light emitting structure, the nth light emitting structure, and the n + 1 light emitting structure in order from the left, the three light emitting structures are electrically connected to the first conductive semiconductor layer of the n-1 light emitting structure. The first electrode is electrically connected to the second electrode electrically connected to the second conductive semiconductor layer of the nth light emitting structure, and the first electrode electrically connected to the first conductive semiconductor layer of the nth light emitting structure is The second electrode is electrically connected to the second conductive semiconductor layer of the n + 1 th light emitting structure.

5 is a diagram illustrating an embodiment of a light emitting device package including a light emitting device array.

The light emitting device package 300 according to the embodiment includes a body 310 including a cavity, a first lead frame 321 and a second lead frame 322 installed on the body 310, and the body. The light emitting device 200 according to the above-described embodiments installed in the 310 and electrically connected to the first lead frame 321 and the second lead frame 322, and the molding part 350 formed in the cavity. It includes.

The body 310 may be formed of a silicon material, a synthetic resin material, or a metal material. When the body 310 is made of a conductive material such as a metal material, although not shown, an insulating layer is coated on the surface of the body 310 to prevent an electrical short between the first and second lead frames 321 and 322. Can be.

The first lead frame 321 and the second lead frame 322 are electrically disconnected from each other and supply current to the light emitting device 200. The first lead frame 321 and the second lead frame 322 may reflect the light generated from the light emitting device 200 to increase the light efficiency, It may be discharged.

The light emitting device 200 may be installed on the body 310 or disposed on the first lead frame 321 or the second lead frame 322. The first lead frame 321 and the light emitting element 200 are directly energized and the second lead frame 322 and the light emitting element 200 are connected through the wire 340. [ The light emitting device 200 may be connected to the lead frames 321 and 322 by a flip chip method or a die bonding method in addition to the wire bonding method.

The light emitting device 200 may be a light emitting device array including three or a plurality of light emitting devices as shown in FIG. 2 in addition to a single light emitting device as shown, wherein each light emitting device is as described above. Can be connected in series. As described above, even if an open region is formed in a part of the first electrode, current may be supplied to each light emitting structure by the transparent conductive layer therein.

The molding part 350 may surround and protect the light emitting device 200. In addition, the phosphor 360 is conformally coated on the molding part 350 as a separate layer from the molding part 350. In this structure, the phosphor 360 is uniformly distributed, so that the wavelength of the light emitted from the light emitting device 200 may be converted in the entire region of the light emitted from the light emitting device package 300.

The light in the first wavelength range emitted from the light emitting device 200 is excited by the phosphor 360 and converted into light in the second wavelength range and light in the second wavelength range passes through the lens (not shown) The light path can be changed.

The light emitting device package 300 may be mounted on one or a plurality of light emitting devices according to the embodiments described above, but the present invention is not limited thereto.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. Still another embodiment may be implemented as a display device, an indicating device, a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments, for example, the lighting system may include a lamp, a streetlight . Hereinafter, a head lamp and a backlight unit will be described as an embodiment of an illumination system in which the above-described light emitting device package is disposed.

6 is a diagram illustrating an embodiment of a head lamp including an array of light emitting devices.

The light emitted from the light emitting device module 401 in which the light emitting device package is disposed is reflected by the reflector 402 and the shade 403 and then transmitted through the lens 404 to the front of the vehicle body You can head.

As described above, in the light emitting device array used in the light emitting device module 401, even though an open area is formed in a part of the first electrode, current is supplied to each light emitting structure by the transparent conductive layer therein, so that the amount of light of the head lamp is increased. Can be made constant.

7 is a diagram illustrating an embodiment of an image display device including an array of light emitting devices.

As shown in the drawing, the image display apparatus 500 according to the present embodiment includes a light source module, a reflection plate 520 on the bottom cover 510, and a reflection plate 520 disposed in front of the reflection plate 520, A first prism sheet 550 and a second prism sheet 560 disposed in front of the light guide plate 540 and a second prism sheet 560 disposed between the first prism sheet 560 and the second prism sheet 560, A panel 570 disposed in front of the panel 570 and a color filter 580 disposed in the front of the panel 570.

The light source module comprises a light emitting device package 535 on a circuit board 530. Here, the circuit board 530 may be a PCB and the like, and the light emitting device package 535 includes the above-described light emitting device array.

The bottom cover 510 can house the components in the image display apparatus 500. The reflective plate 520 may be formed as a separate component as shown in the drawing, or may be provided on the rear surface of the light guide plate 540 or on the front surface of the bottom cover 510 with a highly reflective material.

The reflector 520 can be made of a material having a high reflectance and can be used in an ultra-thin shape, and a polyethylene terephthalate (PET) can be used.

The light guide plate 540 scatters the light emitted from the light emitting device package module so that the light is uniformly distributed over the entire screen area of the LCD. Accordingly, the light guide plate 530 is made of a material having a good refractive index and transmittance. The light guide plate 530 may be formed of poly methylmethacrylate (PMMA), polycarbonate (PC), or polyethylene (PE). Also, if the light guide plate 540 is omitted, an air guide display device can be realized.

The first prism sheet 550 is formed on one side of the support film with a translucent and elastic polymer material. The polymer may have a prism layer in which a plurality of steric structures are repeatedly formed. Here, the plurality of patterns may be provided in the stripe type and the valley repeatedly as shown.

In the second prism sheet 560, a direction of a floor and a valley of one side of the supporting film may be perpendicular to a direction of a floor and a valley of one side of the supporting film in the first prism sheet 550. This is for evenly distributing the light transmitted from the light source module and the reflective sheet in all directions of the panel 570.

In this embodiment, the first prism sheet 550 and the second prism sheet 560 constitute an optical sheet, which may be made of other combinations, for example, a microlens array or a combination of a diffusion sheet and a microlens array Or a combination of one prism sheet and a microlens array, or the like.

A liquid crystal display (LCD) panel may be disposed on the panel 570. In addition to the liquid crystal display panel 560, other types of display devices requiring a light source may be provided.

In the panel 570, a liquid crystal is positioned between glass bodies, and a polarizing plate is placed on both glass bodies to utilize the polarization of light. Here, the liquid crystal has an intermediate property between a liquid and a solid, and liquid crystals, which are organic molecules having fluidity like a liquid, are regularly arranged like crystals. The liquid crystal has a structure in which the molecular arrangement is changed by an external electric field And displays an image.

A liquid crystal display panel used in a display device is an active matrix type, and a transistor is used as a switch for controlling a voltage supplied to each pixel.

A color filter 580 is provided on the front surface of the panel 570 so that only the red, green, and blue light is transmitted through the panel 570 for each pixel.

As described above, in the light emitting device disposed in the image display device according to the present embodiment, current is supplied to each light emitting structure by an internal transparent conductive layer even when an open region is formed in a part of the first electrodes of the arranged light emitting device array. Thus, the light amount of the head lamp can be made constant.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100 and 200: light emitting element arrays 120 and 220: light emitting structure
122, 222: first conductive semiconductor layer 124, 224: active layer
126 and 226: second conductive semiconductor layer 230: reflective layer
235: ohmic layer 237: current blocking layer
240: first capping layer 245: insulating layer
250: second capping layer 255: bonding layer
260: conductive support substrate 270: first electrode
300: light emitting device package 310: body
321, 322: first and second lead frame 340: wire
350: molding part 360: phosphor layer
400: head lamp 410: light emitting element module
402: Reflector 403: Shade
404: Lens 500: Display device
510: bottom cover 520: reflector
530: circuit board module 540: light guide plate
550, 560: first and second prism sheets 570:
580: Color filter

Claims (15)

At least two light emitting structures disposed adjacent to each other and including a first conductive semiconductor layer and a second conductive semiconductor layer and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
First electrodes electrically connected to first conductive semiconductor layers of the respective light emitting structures; And
Second electrodes electrically connected to second conductive semiconductor layers of each of the light emitting structures;
And a transparent conductive layer disposed between the first conductive semiconductor layer and the first electrode. The method according to claim 1,
And a passivation layer surrounding the light emitting structure, wherein the first electrode extends from 0.8 micrometers to 1.2 micrometers from the passivation layer to contact the first conductive semiconductor layer. The method according to claim 1,
And the adjacent light emitting structures are arranged at least 10 micrometers apart. The method according to claim 1,
And a passivation layer disposed around the adjacent light emitting structure and the first electrode spaced apart by at least 5 micrometers. The method according to claim 1,
The transparent conductive layer is a light emitting device array disposed in a thickness of 1 nanometer to 5 nanometers. The method according to claim 1,
Unevenness is disposed on at least a portion of the surface of the light emitting structure, the depth of the unevenness is at least 0.2 micrometers array. The method of claim 6,
The average depth of the irregularities is 0.8 micrometer to 1.2 micrometers light emitting element array. 8. The method according to claim 6 or 7,
And the first electrode is inserted into a surface of the light emitting structure by at least the depth of the unevenness. The method according to claim 1,
And a current blocking layer disposed on the second conductivity type semiconductor layer. The method according to claim 1,
The first electrode in electrical contact with the first conductivity-type semiconductor layer of the n-1 light emitting structure is in electrical contact with the second electrode in electrical contact with the second conductivity-type semiconductor layer of the nth light emitting structure, and the nth And a first electrode in electrical contact with the first conductive semiconductor layer of the light emitting structure in electrical contact with a second electrode in electrical contact with the second conductive semiconductor layer of the n + 1 light emitting structure. The method according to claim 1,
The first electrode extends to the side of the light emitting structure with the transparent electrode layer interposed therebetween. The method according to claim 1,
And a first electrode and a second electrode electrically connected to the first conductive semiconductor layer and the second conductive semiconductor layer in one light emitting structure, with the etch stop layer interposed therebetween. 13. The method of claim 12,
The etch stop layer is disposed between the second electrode electrically connected to each second conductive semiconductor layer of the light emitting structure adjacent to each other. 13. The method of claim 12,
And the etch stop layer is in contact with the passivation layer. 15. An illumination system comprising the array of light emitting elements of any one of claims 1-7.
KR1020120052324A 2012-05-17 2012-05-17 Light emitting device array and illuminating system including the same KR101915214B1 (en)

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