KR20130124820A - Method for tranferring metal oxide/nitride/sulfide thin film and transfer sheet used therefor - Google Patents
Method for tranferring metal oxide/nitride/sulfide thin film and transfer sheet used therefor Download PDFInfo
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- KR20130124820A KR20130124820A KR20120048247A KR20120048247A KR20130124820A KR 20130124820 A KR20130124820 A KR 20130124820A KR 20120048247 A KR20120048247 A KR 20120048247A KR 20120048247 A KR20120048247 A KR 20120048247A KR 20130124820 A KR20130124820 A KR 20130124820A
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- metal
- thin film
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- 239000010409 thin film Substances 0.000 title claims abstract description 94
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 28
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 28
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims description 38
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 title abstract description 18
- 229920000642 polymer Polymers 0.000 claims abstract description 31
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims description 63
- 239000002184 metal Substances 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 46
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- 239000000203 mixture Substances 0.000 claims description 15
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 12
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 9
- 229910052976 metal sulfide Inorganic materials 0.000 claims description 9
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 7
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 6
- 239000005083 Zinc sulfide Substances 0.000 claims description 6
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 5
- -1 polydimethylsiloxane Polymers 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 238000005411 Van der Waals force Methods 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical group S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 238000003980 solgel method Methods 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 4
- 229920002799 BoPET Polymers 0.000 description 3
- 239000010408 film Substances 0.000 description 3
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- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
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- 230000003746 surface roughness Effects 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
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- 229920006254 polymer film Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
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- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
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- 239000012153 distilled water Substances 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
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- 229920000307 polymer substrate Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
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Abstract
Description
본 발명은 금속 산화물/질화물/황화물 박막을 원하는 기재에 전사하는 방법 및 이에 사용되는 전사용 시트에 관한 것이다. The present invention relates to a method for transferring a metal oxide / nitride / sulfide thin film onto a desired substrate and a transfer sheet used therefor.
최근의 액정 디스플레이(LCD)와 유기전자발광 디스플레이(OLED)를 비롯한 유연성(flexibilty) 및 투명성(transparency)을 갖춘 다양한 전자소자의 제조에는, 고분자 필름(polymer film), 유리(glass), 그래핀(graphene) 등을 주요 기질로 사용하여 절연층, 채널층, 전극층, 배선층, 보호층 등 다양한 기능의 박막층을 성장시켜 원하는 소자를 제조하고 있다. BACKGROUND ART [0002] In recent years, various electronic devices having flexibility and transparency including a liquid crystal display (LCD) and an organic electroluminescence display (OLED) have been widely used in the fields of polymer films, glass, graphene or the like is used as a main substrate to grow a thin film layer having various functions such as an insulating layer, a channel layer, an electrode layer, a wiring layer, and a protective layer to produce a desired device.
그러나 기질이 고분자, 유리, 그래핀 등일 경우에는 낮은 내열성 때문에, 보다 향상된 소자 특성을 얻기 위한 고온 열처리나 도핑 등의 후속 공정을 수행하기가 어려운 문제가 있다.However, when the substrate is a polymer, glass, graphene or the like, there is a problem that it is difficult to carry out subsequent processes such as high temperature heat treatment and doping to obtain improved device characteristics because of low heat resistance.
따라서, 고분자, 유리, 그래핀 등과 같이 내열성이 낮은 기질에서 보다 향상된 소자 특성을 구현하기 위하여 새로운 방식의 소자 제조 방식이 요구된다.Therefore, a new method of manufacturing a device is required in order to realize improved device characteristics in a substrate having low heat resistance such as a polymer, glass, or graphene.
따라서, 본 발명의 목적은 다양한 기재에 대해 원하는 두께를 갖는 금속 산화물/질화물/황화물 박막을 전사하는 방법, 및 이에 사용되는 전사용 시트를 제공하는 것이다. Accordingly, an object of the present invention is to provide a method for transferring a metal oxide / nitride / sulfide thin film having a desired thickness to various substrates, and a transfer sheet used therefor.
상기 목적에 따라, 본 발명은 (a) 제 1 기재 상에 금속 산화물, 금속 질화물, 금속 황화물 및 이들의 혼합물로 이루어진 군으로부터 선택된 물질을 포함하는 금속계 박막을 형성하는 단계; (b) 형성된 금속계 박막 위에 고분자 지지층을 형성하는 단계; (c) 상기 제 1 기재를 제거하여 고분자 지지층과 금속계 박막이 적층된 전사용 시트를 수득하는 단계; (d) 상기 전사용 시트를 금속계 박막 면이 접하도록 제 2 기재에 접착시키는 단계; 및 (e) 상기 전사용 시트의 고분자 지지층을 제거하는 단계를 포함하는, 금속계 박막의 전사 방법을 제공한다.According to the above object, the present invention provides a method for manufacturing a thin film transistor comprising the steps of: (a) forming a metal thin film on a first substrate, the thin film including a material selected from the group consisting of metal oxides, metal nitrides, metal sulfides and mixtures thereof; (b) forming a polymer support layer on the formed metal thin film; (c) removing the first substrate to obtain a transfer sheet in which the polymer support layer and the metal thin film are laminated; (d) adhering the transfer sheet to the second substrate such that the metal-based thin film surface is in contact with the transfer sheet; And (e) removing the polymer support layer of the transfer sheet.
상기 다른 목적에 따라, 본 발명은 금속 산화물, 금속 질화물, 금속 황화물 및 이들의 혼합물로 이루어진 군으로부터 선택된 물질을 포함하는 금속계 박막, 및 상기 금속계 박막 위에 형성된 고분자 지지층을 포함하는, 금속계 박막의 전사용 시트를 제공한다.According to another aspect of the present invention, there is provided a method of manufacturing a metal thin film including a metal thin film including a material selected from the group consisting of metal oxides, metal nitrides, metal sulfides, and mixtures thereof, and a polymer support layer formed on the metal thin film Sheet.
또한, 본 발명은 상기 방법에 의해 전사된 금속계 박막을 포함하는, 전자 소자를 제공한다.The present invention also provides an electronic device comprising the metal-based thin film transferred by the above method.
본 발명의 방법에 따르면, 금속 산화물/질화물/황화물 박막 형성이 어려운 기판 상에, 전사를 통해 용이하게 금속 산화물/질화물/황화물 박막을 원하는 두께로 형성할 수 있으므로, 금속 산화물/질화물/황화물 박막을 포함하는 그래핀 소자와 같은 다양한 전자 소자를 용이하게 제조할 수 있다.
According to the method of the present invention, since a metal oxide / nitride / sulfide thin film can be easily formed to a desired thickness on a substrate which is difficult to form a metal oxide / nitride / sulfide thin film, the metal oxide / nitride / Various electronic devices such as a graphene device including the electron-emitting device can be easily manufactured.
도 1은 본 발명에 따른 금속 산화물/질화물/황화물 박막의 전사 방법에 사용되는 전사용 시트를 제조하는 공정의 일례를 나타낸 것이다 (10: 금속 산화물/질화물/황화물 박막, 20: 고분자 지지층, 30: 기재).
도 2는 본 발명에 따라 금속 산화물/질화물/황화물 박막을 전사하여 전극 소자를 제조하는 공정의 일례를 나타낸 것이다 (10: 금속 산화물/질화물/황화물 박막, 20: 고분자 지지층, 50: 하부 전극, 60: 지지체, 70: 상부 전극).
도 3은 본 발명에 따라 제조된 전사용 시트의 표면에 대해 전자현미경으로 얻은 이미지이다.
FIG. 1 shows an example of a process for producing a transfer sheet used in a transfer method of a metal oxide / nitride / sulfide thin film according to the present invention (10: metal oxide / nitride / sulfide thin film, 20: polymer support layer, materials).
FIG. 2 shows an example of a process for manufacturing an electrode device by transferring a metal oxide / nitride / sulfide thin film according to the present invention (10: metal oxide / nitride / sulfide thin film, 20: polymer support layer, 50: : Support, 70: upper electrode).
Fig. 3 is an image obtained by an electron microscope on the surface of the transfer sheet produced according to the present invention.
이하, 본 발명에 따라 원하는 기재 상에 금속 산화물/질화물/황화물 박막을 전사시키는 방법을 보다 구체적으로 설명한다. 본 발명에서 전사의 대상으로 하는 "금속 산화물/질화물/황화물 박막"은 구체적으로는 금속 산화물, 금속 질화물, 금속 황화물 및 이들의 혼합물로 이루어진 군으로부터 선택된 물질을 포함하는 박막을 의미하는 것으로서, 이하 명세서에서는 이를 "금속계 박막"이라 간략히 칭한다.
Hereinafter, a method for transferring a metal oxide / nitride / sulfide thin film onto a desired substrate according to the present invention will be described in more detail. The "metal oxide / nitride / sulfide thin film" to be transferred in the present invention refers specifically to a thin film containing a material selected from the group consisting of metal oxides, metal nitrides, metal sulfides and mixtures thereof, Quot; metal thin film "
전사용 시트의 제조Production of transfer sheet
본 발명에 따르는 전사용 시트는, (a) 제 1 기재 상에 금속계 박막을 형성하는 단계; (b) 상기 금속계 박막 위에 고분자 지지층을 형성하는 단계; 및 (c) 상기 제 1 기재를 제거하여 금속계 박막 상에 고분자 지지층이 적층된 전사용 시트를 수득하는 단계를 포함하는 방법에 의해 제조할 수 있다.
The transfer sheet according to the present invention comprises: (a) forming a metal thin film on a first substrate; (b) forming a polymer support layer on the metal thin film; And (c) removing the first substrate to obtain a transfer sheet in which a polymer support layer is laminated on the metal-based thin film.
상기 단계 (a)에 있어서, 금속계 박막이 형성되는 기재(제 1 기재)는 제거가 용이한 기재라면 특별히 한정되지 않으며, 예를 들어 금속 기재, 반도체 기재, 고분자 기재, 또는 이들이 조합된 기재가 가능하다.In the step (a), the substrate (first substrate) on which the metal thin film is formed is not particularly limited as long as it is a readily removable substrate. For example, a metal substrate, a semiconductor substrate, a polymer substrate, Do.
예를 들어, 제 1 기재는, 사파이어(sapphire), 실리콘 등의 기질 상에, 구리, 니켈, 코발트, 스텐레스스틸 및 이들의 합금으로 이루어진 군으로부터 선택되는 금속 박막이, 스퍼터링법, 열증착법(thermal evaporation), 전자빔증착법(e-beam evaporation) 등의 방법에 의해 적절한 두께로 형성된 것일 수 있다. For example, the first substrate may be formed by depositing a metal thin film selected from the group consisting of copper, nickel, cobalt, stainless steel, and alloys thereof on a substrate such as sapphire, silicon or the like by a sputtering method, evaporation, e-beam evaporation, or the like.
또한, 금속계 박막은, 금속 산화물, 금속 질화물, 금속 황화물 및 이들의 혼합물로 이루어진 군으로부터 선택된 물질을 포함하는 박막이 가능하다. Further, the metal thin film may be a thin film containing a material selected from the group consisting of metal oxides, metal nitrides, metal sulfides, and mixtures thereof.
구체적으로, 금속 산화물로는 산화알루미늄(Al2O3), 산화실리콘(SiO2), 산화아연(ZnO), 산화하프늄(HfO2), 산화지르코늄(ZrO2), 산화티타늄(TiO2), 산화주석 (SnO2), 또는 이들의 혼합물이 가능하다.Specific examples of the metal oxide include aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ), zinc oxide (ZnO), hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), titanium oxide (TiO 2 ) Tin oxide (SnO 2 ), or mixtures thereof.
또한, 금속 질화물로는 질화갈륨(GaN), 질화붕소(BN), 질화알루미늄(AlN), 질화티타늄(TiN), 질화인듐(InN), 또는 이들의 혼합물이 가능하다.The metal nitride may be gallium nitride (GaN), boron nitride (BN), aluminum nitride (AlN), titanium nitride (TiN), indium nitride (InN), or a mixture thereof.
또한, 금속 황화물로는 이황화몰리브덴(MoS2), 황화카드뮴(CdS), 황화아연(ZnS), 이황화텅스텐(WS2), 또는 이들의 혼합물이 가능하다. Examples of the metal sulfides include molybdenum disulfide (MoS 2 ), cadmium sulfide (CdS), zinc sulfide (ZnS), tungsten disulfide (WS 2 ), and mixtures thereof.
또한, 상기 금속 박막 상에 금속계 박막을 형성하는 방법으로는 원자층증착법(ALD), 화학기상증착법(CVD), 화학적용액성장법(CBD), 잉크젯, 스핀코팅, 졸겔법, 인쇄공정(화학적 증착법), 스퍼터링법(물리적 증착법), 열 증착법 등이 가능하며, 예를 들어 원자층증착법(ALD)을 이용할 경우 균일하고 얇은 두께의 박막을 증착할 수 있다. 이때 증착되는 금속계 박막의 두께는 필요에 따라 조절할 수 있으며, 예를 들어 0.5nm 내지 5㎛ 범위가 가능하며, 보다 바람직하게는 10nm 내지 30nm 범위인 것이 좋다.
As a method of forming the metal thin film on the metal thin film, there can be used ALD, CVD, CBD, ink jet, spin coating, sol-gel method, chemical vapor deposition ), A sputtering method (physical vapor deposition method), a thermal evaporation method, and the like. For example, when atomic layer deposition (ALD) is used, a uniform thin film can be deposited. At this time, the thickness of the metal thin film to be deposited can be adjusted as required, for example, it is preferably in the range of 0.5 nm to 5 μm, more preferably in the range of 10 nm to 30 nm.
상기 단계 (b)에 있어서, 상기 금속계 박막 위에 형성되는 고분자 지지층은 폴리메틸메타크릴레이트(PMMA), 폴리디메틸실록산(PDMS), 및 열박리성테이프(thermal release tape)로 이루어진 군으로부터 선택될 수 있으며, 예를 들어 PMMA 지지층을 형성할 경우 잔여 불순물이 적고 금속계 박막을 변형시키지 않아 유리하며, 이와 같이 PMMA의 경우 아세톤과 같은 유기 용매에 의해 쉽게 제거될 수 있도록 분자량(Mw)이 100,000 내지 500,000, 보다 바람직하게는 120,000 내지 350,000인 것이 좋다. In the step (b), the polymer support layer formed on the metal thin film may be selected from the group consisting of polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), and thermal release tape For example, when a PMMA support layer is formed, residual impurities are small and the metal thin film is not deformed. Thus, PMMA has a molecular weight (Mw) of 100,000 to 500,000 And preferably from 120,000 to 350,000.
고분자 지지층의 형성 방법으로는, PMMA 지지층 또는 PDMS 지지층을 형성할 경우 스핀 코팅법(spin coating), 딥 코팅법(dip coating) 등이 가능하다. 예를 들어, 스핀 코팅법을 이용하여 500rpm으로 10초간 코팅 후 2000rpm으로 20초간 코팅하는 것에 의해, 수 ㎛의 균일한 두께의 고분자막을 형성할 수 있다. 또한, 코팅법을 이용할 경우 500 내지 3000 nm의 두께 범위로 코팅하는 것이 바람직하다. As a method for forming the polymer support layer, spin coating, dip coating, or the like can be used to form a PMMA support layer or a PDMS support layer. For example, a polymer film having a uniform thickness of several micrometers can be formed by spin coating at 500 rpm for 10 seconds and then coating at 2000 rpm for 20 seconds using a spin coating method. Further, when the coating method is used, it is preferable to coat in a thickness range of 500 to 3000 nm.
이와 같이 형성된 고분자 지지층은 추후 금속계 박막과 함께 전사용 시트를 형성하며, 금속계 박막의 지지체 역할을 수행한다.
The polymer support layer thus formed forms a transfer sheet together with the metal thin film and serves as a support for the metal thin film.
상기 단계 (c)에 있어서, 제 1 기재의 제거는 에칭 용액, 유기 용매 등에 의해 이루어질 수 있다.In the step (c), the removal of the first substrate may be performed by an etching solution, an organic solvent, or the like.
예를 들어, 제 1 기재가 금속 소재일 경우에 에칭 용액을 사용할 수 있으며 , 구체적으로 염화철(III)(FeCl3) 수용액, 염산 수용액, 또는 이들의 혼합 용액이 가능하고, 특히 제 1 기재가 구리일 경우 0.5~1.5M 농도의 염화철(III) 수용액을 사용할 수 있다. 에칭 용액을 사용하는 경우 침지법을 적용할 수 있으며, 예를 들어 산이 섞여 있지 않은 염화철(III) 수용액으로 농도를 최대한 묽혀서 에칭 속도를 낮추면 금속계 박막에 영향을 주지 않고 에칭을 할 수 있다. For example, when the first base material is a metal material, an etching solution can be used. Specifically, an aqueous solution of iron (III) chloride (FeCl 3 ), an aqueous solution of hydrochloric acid or a mixed solution thereof can be used. , An aqueous solution of iron (III) chloride at a concentration of 0.5 to 1.5 M may be used. If an etching solution is used, a dipping method can be applied. For example, if the etching rate is lowered by diluting the concentration with an aqueous solution of iron chloride (III) in which no acid is mixed, etching can be performed without affecting the metal thin film.
또한, 제 1 기재가 고분자 소재일 경우에 적절한 유기 용매를 사용하여 제거시킬 수 있다.
Further, when the first base material is a polymer material, it can be removed by using an appropriate organic solvent.
도 1은 본 발명에 따라 전사용 시트를 제조하는 공정의 일례를 나타낸 것으로서, 이를 참조하여 설명하면, 먼저 기재(30, 제 1 기재) 상에 금속계 박막(10)을 증착하고(A1), 상기 금속계 박막(10) 상에 고분자 지지층(20)을 형성한 뒤(A2), 기재(30)를 제거함으로써(A3), 전사용 시트를 얻을 수 있다.
Referring to FIG. 1, there is shown an example of a process for manufacturing a transfer sheet according to the present invention. First, a metal
이로써 제조된 전사용 시트 중의 금속계 박막은 두께를 매우 얇게 제조하는 것이 가능하며, 예를 들어 금속계 박막은 10nm 내지 30nm의 두께를 가질 수 있다. 또한, 동시에 미세 구조상으로 매우 편평한(atomic-flat) 표면을 가질 수 있으며, 예를 들어 0.3nm 내지 1.5nm의 표면 거칠기(roughness), 보다 바람직하게는 0.5nm 내지 1nm 범위의 최소화된 표면 거칠기를 가질 수 있다.The metal thin film in the transfer sheet thus produced can be made very thin. For example, the metal thin film may have a thickness of 10 nm to 30 nm. It can also have an atomic-flat surface on its microstructure at the same time, for example having a surface roughness of 0.3 nm to 1.5 nm, more preferably having a minimized surface roughness in the range of 0.5 nm to 1 nm .
제조된 전사용 시트는 이하의 단계에서 금속계 박막의 전사에 사용될 수 있으며, 기타 전자 소자의 제조에 유용하게 사용될 수 있다.
The transfer sheet thus prepared can be used for the transfer of the metal thin film in the following steps and can be usefully used for manufacturing other electronic devices.
금속 산화물/질화물/황화물 박막의 전사Transcription of metal oxide / nitride / sulfide thin film
앞서의 단계에서 제조된 전사용 시트를 이용하여, (d) 전사용 시트의 금속계 박막을 원하는 기재(제 2 기재)에 접착시키는 단계; 및 (e) 전사용 시트의 고분자 지지층을 제거하는 단계를 통해, 금속계 박막을 원하는 기재에 전사시킬 수 있다.
(D) adhering the metal-based thin film of the transfer sheet to a desired substrate (second substrate) using the transfer sheet produced in the previous step; And (e) removing the polymer support layer of the transfer sheet, the metal thin film can be transferred to the desired substrate.
상기 단계 (d)에 있어서, 접착 공정은 특별히 한정되지는 않으나, 반데르발스 힘에 의한 접착이 가능하다. 예를 들어, 전사용 시트의 금속계 박막에 물을 적시고 기재에 접합시킨 뒤 건조를 통해 물을 증발시키면서 반데르발스 힘에 의해 접착되도록 하거나, 또는 약간의 물리적 힘을 가함으로써 접합시킬 수 있다.In the step (d), the bonding step is not particularly limited, but bonding by van der Waals force is possible. For example, the metal-based thin film of the transfer sheet can be bonded by wetting with water, bonding it to the substrate, and then adhering by van der Waals force while evaporating the water through drying, or by applying a slight physical force.
또한 상기 단계 (e)에 있어서, 고분자 지지층을 제거하는 방법으로는 고분자 지지층의 종류에 따라 적절한 방법을 사용할 수 있으며, 예를 들어, PMMA 지지층의 경우 아세톤과 같은 유기 용매로 녹여 제거할 수 있고, 지지층으로서 열박리성테이프를 사용하였을 경우에는 열을 가함으로써 제거할 수 있다.
In the step (e), the polymer support layer may be removed by an appropriate method depending on the type of the polymer support layer. For example, in the case of the PMMA support layer, the polymer support layer may be removed by dissolving it with an organic solvent such as acetone, When a heat-peelable tape is used as the support layer, it can be removed by applying heat.
이와 같은 본 발명의 방법에 의하면, 종래에는 금속 산화물/질화물/황화물 박막을 부가하기가 어려웠던 부분에도 용이하고 간단한 절차로 부가할 수 있으며, 박막의 표면 거칠기가 매우 낮아서 그래핀 등의 전극 상에 부가하는 것이 가능하므로, 박막트랜지스터(TFT)나 가요성(flexible) 기판과 같은 전자 소재를 효율적으로 제조할 수 있다.
According to the method of the present invention, it is possible to easily and easily add the metal oxide / nitride / sulfide thin film to a portion where it is difficult to add the thin film, and since the surface roughness of the thin film is very low, It is possible to efficiently manufacture an electronic material such as a thin film transistor (TFT) or a flexible substrate.
도 2는 본 발명의 전사 방법을 이용하여 전자 소자를 제조하는 공정의 일례를 나타낸 것으로서, 이를 참조하여 설명하면, 먼저 지지체(60) 상에 전극(50, 하부전극)이 형성된 기재(제 2 기재)를 준비하고(B1), 상기 기재(제 2 기재)의 전극(50) 상에 고분자 지지층(20)과 금속계 박막(10)이 적층된 전사용 시트를 접착한 뒤(B2), 고분자 지지층(20)을 제거함으로써 금속계 박막(10)의 전사를 완료할 수 있다(B3). Referring to FIG. 2, an example of a process for manufacturing an electronic device using the transfer method of the present invention will be described. First, a substrate having electrodes 50 (lower electrodes) formed on a support 60 (B1), a transfer sheet in which the
또한 필요한 경우, 상기 전사된 금속계 박막(10) 상에 추가적인 전극(70, 상부 전극)을 전사하여 다양한 전자 소자를 제조할 수 있다(B4).
In addition, if necessary, various electronic devices can be manufactured by transferring the additional electrode (upper electrode) 70 onto the transferred metal thin film 10 (B4).
따라서, 본 발명은 상기 전사용 시트를 사용하는 전사 방법에 의해 전사된 금속계 박막(금속 산화물/질화물/황화물 박막)을 포함하는 전자 소자를 제공한다. Accordingly, the present invention provides an electronic device comprising a metal-based thin film (metal oxide / nitride / sulfide thin film) transferred by a transfer method using the transfer sheet.
예를 들어, 지지체 위에 형성된 전극 상에 금속계 박막을 전사하고 그 위에 추가적인 패턴 등을 형성하거나 추가적인 기판, 필름 등을 적층함으로써 전자 소자를 완성할 수 있다.For example, an electronic device can be completed by transferring a metal thin film onto an electrode formed on a support, forming an additional pattern thereon, or laminating an additional substrate, film, or the like.
이 때 상기 전자 소자는 그래핀(graphene), 산화인듐주석(ITO), 산화인듐아연(IZO), 폴리(3,4-에틸렌디옥시티오펜)(PEDOT) 및 이들의 조합으로 이루어진 군으로부터 선택되는 전극 또는 채널층을 포함할 수 있다.Wherein the electronic device is selected from the group consisting of graphene, indium tin oxide (ITO), indium zinc oxide (IZO), poly (3,4-ethylenedioxythiophene) (PEDOT) An electrode or a channel layer.
또한, 상기 전자 소자를 구성하는 지지체, 기판, 및 필름은 폴리에틸렌테레프탈레이트(PET), 폴리디메틸실록산(PDMS), 폴리이미드(polyimide) 및 이들의 조합으로 이루어진 군으로부터 선택되는 물질을 포함할 수 있다.In addition, the support, substrate, and film constituting the electronic device may include a material selected from the group consisting of polyethylene terephthalate (PET), polydimethylsiloxane (PDMS), polyimide, and combinations thereof .
특히, 본 발명은 전극으로서 그래핀(graphene)을 사용하는 그래핀 전자 소자를 제공하며, 이 때 전극의 지지체로서 PET와 같은 가요성 필름을 사용할 경우 유연한(flexible) 그래핀 전자 소자의 제조가 가능하다.
Particularly, the present invention provides a graphene electronic device using graphene as an electrode, and it is possible to manufacture a flexible graphene electronic device when a flexible film such as PET is used as a support of an electrode Do.
이하, 본 발명을 실시예에 의해 보다 상세히 설명한다. 단 하기 실시예는 본 발명을 예시하는 것일 뿐, 발명의 내용이 하기 실시예에 한정되는 것은 아니다.
Hereinafter, the present invention will be described in more detail by way of examples. The following examples are illustrative of the present invention, but the invention is not limited to the following examples.
실시예 1: 전사용 시트의 제조Example 1: Preparation of Transfer Sheet
사파이어(sapphire) 기재 상에 구리 박막을 스퍼터링법에 의해 500nm의 두께로 증착하였다(증착 조건 - 전원: 2W, 시간: 3시간, 증착 속도: 4nm/분). 이후, 상기 구리 박막 상에 산화알루미늄(Al2O3) 박막을 원자층증착법(ALD; atomic layer deposition)에 의해 30nm의 두께로 증착하였다 (증착 조건 - Al source: TMA, O(산소) source: 물, 증착 기판 온도: 200℃, 1 cycle: Ar-TMA-Ar-H2O). A copper thin film was deposited on a sapphire substrate to a thickness of 500 nm by sputtering (conditions for deposition: power: 2 W, time: 3 hours, deposition rate: 4 nm / min). Then, an aluminum oxide (Al 2 O 3 ) thin film was deposited on the copper thin film by atomic layer deposition (ALD) to a thickness of 30 nm (Al deposition source: TMA, O (oxygen) source: Water, deposition substrate temperature: 200 ° C, 1 cycle: Ar-TMA-Ar-H 2 O).
증착된 산화 알루미늄 박막 위에 PMMA(Mw:350,000)를 스핀코팅법에 의해 2,000nm의 두께로 코팅하였다.PMMA (Mw: 350,000) was coated on the deposited aluminum oxide thin film to a thickness of 2,000 nm by spin coating.
수득한 PMMA 지지층이 형성된 기판을 에칭 용액(1M FeCl3 수용액)에 담가 구리를 완전히 녹여냄으로써, PMMA 지지층과 산화알루미늄 박막이 적층된 전사용 시트를 분리해 내었다.The obtained substrate on which the PMMA support layer was formed was immersed in an etching solution (1M FeCl 3 aqueous solution) to completely dissolve the copper, thereby separating the transfer sheet in which the PMMA support layer and the aluminum oxide thin film were laminated.
도 3은 실시예 1에서 얻은 전사용 시트의 산화알루미늄 박막 표면에 대해 얻은 전자현미경 이미지로서, RMS 거칠기값(root-mean-square roughenss)이 1.176 nm으로 측정되었다.
FIG. 3 is an electron microscope image obtained on the aluminum oxide thin film surface of the transfer sheet obtained in Example 1, wherein the root-mean-square roughenss were measured at 1.176 nm.
실시예 2: 산화알루미늄 박막이 전사된 전자 소자의 제조Example 2: Manufacture of an electronic device in which an aluminum oxide thin film was transferred
(1) 하부 전극의 전사 (1) Transfer of the lower electrode
구리 호일 위에 그래핀 박막을 화학기상증착법(CVD)을 이용하여 형성하였다. 상기 형성된 그래핀 박막 상에 PMMA 지지층을 스핀코팅법에 의해 형성하였다. 이를 에칭 용액인 1M FeCl3 수용액에 담가 구리를 녹여낸 후, 그래핀 박막 상에 잔류하는 에칭 용액을 증류수로 씻어내었다.Graphene thin films were formed on copper foil by chemical vapor deposition (CVD). A PMMA support layer was formed on the formed graphene thin film by spin coating. The copper solution was immersed in an aqueous solution of 1M FeCl 3 as an etching solution, and the etching solution remaining on the graphene thin film was rinsed with distilled water.
이로써 제조된 그래핀 박막을 포함하는 시트를 PET 필름 상에 접착시킨 뒤, 아세톤으로 PMMA 지지층을 녹여 제거하였다. 그 결과, PET 필름 상에 하부 전극으로서 PET 필름과 거의 유사한 대면적(large-area)의 그래핀이 전사된 기판을 얻었다.The sheet including the thus-produced graphene thin film was adhered onto the PET film, and then the PMMA support layer was dissolved with acetone to remove it. As a result, a substrate on which a large-area graphene almost similar to the PET film was transferred as a lower electrode on the PET film was obtained.
(2) 산화알루미늄 박막의 전사(2) Transcription of aluminum oxide thin film
실시예 1에서 제조한 전사용 시트를 물에 적신 뒤, 앞서 얻은 기판의 그래핀 위에 접합시켰다. 이를 기울인 상태로 자연 건조시켜, 물이 증발되면서 그래핀과 산화알루미늄 박막이 반데르발스 힘에 의해 접착되도록 하였다. 건조가 끝나면 100℃의 온도로 20분간 열을 가하여 물기를 완전히 제거하면서 접착력을 높였다. 이후, 아세톤을 이용하여 PMMA 지지층을 제거함으로써 산화알루미늄 박막의 전사를 완료하였다.The transfer sheet prepared in Example 1 was wetted with water and bonded onto the graphene of the above-obtained substrate. The slurry was naturally dried in a tilted state, and water was evaporated, so that the graphene and aluminum oxide thin films were bonded by van der Waals force. After drying, heat was applied at a temperature of 100 ° C for 20 minutes to completely remove moisture, thereby increasing the adhesion. Thereafter, transfer of the aluminum oxide thin film was completed by removing the PMMA support layer using acetone.
(3) 상부 전극의 전사(3) Transfer of the upper electrode
전사된 산화알루미늄 박막 상에 상부 전극으로서 다수의 소면적(small-area) 그래핀을 전사함으로써, 그래핀 전자 소자를 완성하였다.
A plurality of small-area graphenes were transferred as the upper electrode onto the transferred aluminum oxide thin film to complete the graphene electronic device.
이상, 본 발명을 상기 실시예를 중심으로 하여 설명하였으나 이는 예시에 지나지 아니하며, 본 발명은 본 발명의 기술분야에서 통상의 지식을 가진 자에게 자명한 다양한 변형 및 균등한 기타의 실시예를 이하에 첨부한 청구범위 내에서 수행할 수 있다는 사실을 이해하여야 한다.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, It is to be understood that the invention may be practiced within the scope of the appended claims.
10: 금속계(금속 산화물/질화물/황화물) 박막 20: 고분자 지지층
30: 기재(제 1 기재) 50: 하부 전극
60: 지지체 70: 상부 전극10: metal (metal oxide / nitride / sulfide) thin film 20: polymer support layer
30: substrate (first substrate) 50: lower electrode
60: Support 70: Upper electrode
Claims (15)
(b) 상기 금속계 박막 위에 고분자 지지층을 형성하는 단계;
(c) 상기 제 1 기재를 제거하여 고분자 지지층과 금속계 박막이 적층된 전사용 시트를 수득하는 단계;
(d) 상기 전사용 시트를 금속계 박막 면이 접하도록 제 2 기재에 접착시키는 단계; 및
(e) 상기 전사용 시트의 고분자 지지층을 제거하는 단계를 포함하는, 금속계 박막의 전사 방법.
(a) forming a metal thin film on a first substrate, the metal thin film including a material selected from the group consisting of metal oxides, metal nitrides, metal sulfides, and mixtures thereof;
(b) forming a polymer support layer on the metal thin film;
(c) removing the first substrate to obtain a transfer sheet in which the polymer support layer and the metal thin film are laminated;
(d) adhering the transfer sheet to the second substrate such that the metal-based thin film surface is in contact with the transfer sheet; And
(e) removing the polymer support layer of the transfer sheet.
상기 단계 (e) 이후에 추가로 단계 (a) 내지 (e)를 1회 이상 반복하여,
상기 제 2 기재 상에 상기 금속계 박막을 복수개 전사하는 것을 특징으로 하는, 금속계 박막의 전사 방법.
The method of claim 1,
After step (e), steps (a) to (e) are repeated one or more times,
And transferring the plurality of metal thin films onto the second substrate.
상기 단계 (a)에서
상기 금속 산화물이 산화알루미늄(Al2O3), 산화실리콘(SiO2), 산화아연(ZnO), 산화하프늄(HfO2), 산화지르코늄(ZrO2), 산화티타늄(TiO2), 산화주석 (SnO2) 및 이들의 혼합물로부터 선택되고;
상기 금속 질화물이 질화갈륨(GaN), 질화붕소(BN), 질화알루미늄(AlN), 질화티타늄(TiN), 질화인듐(InN), 및 이들의 혼합물로부터 선택되고;
상기 금속 황화물이 이황화몰리브덴(MoS2), 황화카드뮴(CdS), 황화아연(ZnS), 이황화텅스텐(WS2), 및 이들의 혼합물로부터 선택되는 것을 특징으로 하는, 금속계 박막의 전사 방법.
The method of claim 1,
In step (a)
Wherein the metal oxide is selected from the group consisting of aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ), zinc oxide (ZnO), hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), titanium oxide (TiO 2 ) It is selected from SnO 2), and mixtures thereof;
Wherein the metal nitride is selected from gallium nitride (GaN), boron nitride (BN), aluminum nitride (AlN), titanium nitride (TiN), indium nitride (InN), and mixtures thereof;
Wherein the metal sulfide is selected from molybdenum disulfide (MoS 2 ), cadmium sulfide (CdS), zinc sulfide (ZnS), tungsten disulfide (WS 2 ), and mixtures thereof.
상기 단계 (a)에서 금속계 박막의 형성이 원자층증착법(ALD), 화학기상증착법(CVD), 화학적용액성장법(CBD), 잉크젯, 스핀코팅, 졸겔법, 인쇄공정, 스퍼터링법, 또는 열 증착법에 의해 실시되는 것을 특징으로 하는, 금속계 박막의 전사 방법.
The method of claim 1,
In the step (a), the formation of the metal thin film may be performed by atomic layer deposition (ALD), chemical vapor deposition (CVD), chemical solution growth (CBD), inkjet, spin coating, sol-gel method, printing, sputtering, Wherein the metal thin film is formed by a method comprising the steps of:
상기 단계 (b)에서 고분자 지지층이 폴리메틸메타크릴레이트(PMMA), 폴리디메틸실록산(PDMS), 및 열박리성테이프(thermal release tape)로 이루어진 군으로부터 선택되는 것을 특징으로 하는, 금속계 박막의 전사 방법.
The method of claim 1,
Wherein the polymeric support layer is selected from the group consisting of polymethylmethacrylate (PMMA), polydimethylsiloxane (PDMS), and thermal release tape in the step (b) .
상기 단계 (c)에서 제 1 기재의 제거가 에칭 용액 또는 유기 용매에 의해 이루어지는 것을 특징으로 하는, 금속계 박막의 전사 방법.
The method of claim 1,
Wherein the removal of the first substrate in step (c) is performed by an etching solution or an organic solvent.
상기 단계 (d)에서 금속계 박막의 접착이, 상기 전사용 시트의 금속계 박막 면에 물을 적시고 제 2 기재에 접합시킨 뒤 건조를 통해 물을 증발시키면서 반데르발스 힘에 의해 접착하는 것을 특징으로 하는, 금속계 박막의 전사 방법.
The method of claim 1,
In the step (d), the adhesion of the metal-based thin film is wetted with water on the metal-based thin film surface of the transfer sheet and bonded to the second substrate, characterized in that the adhesion by van der Waals force while evaporating the water through drying , Metal-based thin film transfer method.
상기 단계 (b)에서 고분자 지지층이 폴리메틸메타크릴레이트(PMMA)이고,
상기 단계 (e)에서 유기 용매에 의해 고분자 지지층을 제거하는 것을 특징으로 하는, 금속계 박막의 전사 방법.
The method of claim 1,
In the step (b), the polymer support layer is polymethyl methacrylate (PMMA)
Wherein the polymer supporting layer is removed by an organic solvent in the step (e).
A metal-based thin film containing a material selected from the group consisting of metal oxides, metal nitrides, metal sulfides and mixtures thereof, and a polymer support layer formed on the metal-based thin film, the sheet for transferring a metal-based thin film.
상기 금속계 박막의 두께가 0.5nm 내지 5㎛인 것을 특징으로 하는, 전사용 시트.
The method of claim 9,
The thickness of the metal-based thin film is a transfer sheet, characterized in that 0.5nm to 5㎛.
상기 금속 산화물이 산화알루미늄(Al2O3), 산화실리콘(SiO2), 산화아연(ZnO), 산화하프늄(HfO2), 산화지르코늄(ZrO2), 산화티타늄(TiO2), 산화주석 (SnO2) 및 이들의 혼합물로 이루어진 군으로부터 선택되고;
상기 금속 질화물이 질화갈륨(GaN), 질화붕소(BN), 질화알루미늄(AlN), 질화티타늄(TiN), 질화인듐(InN), 및 이들의 혼합물로 이루어진 군으로부터 선택되고;
상기 금속 황화물이 이황화몰리브덴(MoS2), 황화카드뮴(CdS), 황화아연(ZnS), 이황화텅스텐(WS2), 및 이들의 혼합물로 이루어진 군으로부터 선택되는 것을 특징으로 하는, 전사용 시트.
The method of claim 9,
The metal oxide may be aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ), zinc oxide (ZnO), hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), titanium oxide (TiO 2 ), tin oxide ( SnO 2 ) and mixtures thereof;
The metal nitride is selected from the group consisting of gallium nitride (GaN), boron nitride (BN), aluminum nitride (AlN), titanium nitride (TiN), indium nitride (InN), and mixtures thereof;
The metal sulfide is selected from the group consisting of molybdenum disulfide (MoS 2 ), cadmium sulfide (CdS), zinc sulfide (ZnS), tungsten disulfide (WS 2 ), and mixtures thereof.
상기 고분자 지지층이 폴리메틸메타크릴레이트(PMMA), 폴리디메틸실록산(PDMS), 및 열박리성테이프(thermal release tape)로 이루어진 군으로부터 선택되는 것을 특징으로 하는, 전사용 시트.
The method of claim 9,
And the polymer support layer is selected from the group consisting of polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), and thermal release tape.
상기 전사용 시트가 제 1 항의 단계 (a) 내지 (c)를 포함하는 방법에 의해 제조된 것임을 특징으로 하는, 전사용 시트.
The method of claim 9,
The transfer sheet is produced by the method comprising the steps (a) to (c) of claim 1.
An electronic device comprising a metal-based thin film transferred by the method of any one of claims 1 to 8.
상기 전자 소자가 그래핀(graphene) 소재의 전극 또는 채널층을 포함하는 것을 특징으로 하는, 전자 소자.15. The method of claim 14,
Wherein the electronic device comprises an electrode or channel layer of a graphene material.
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| WO2018174351A1 (en) * | 2017-03-24 | 2018-09-27 | 서울대학교산학협력단 | Functional contact lens and manufacturing method therefor |
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| US10867768B2 (en) * | 2017-08-30 | 2020-12-15 | Uchicago Argonne, Llc | Enhanced electron amplifier structure and method of fabricating the enhanced electron amplifier structure |
| KR102253452B1 (en) * | 2018-10-11 | 2021-05-18 | 성균관대학교산학협력단 | Transfer method of thin films using van der waals force |
| KR102265089B1 (en) * | 2019-12-17 | 2021-06-14 | 순천대학교 산학협력단 | Graphene synthetic method for conductive property control |
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| JP3974749B2 (en) * | 2000-12-15 | 2007-09-12 | シャープ株式会社 | Functional element transfer method |
| KR100569881B1 (en) * | 2004-08-31 | 2006-04-11 | 한국과학기술원 | Method for Transfer of High-Quality Thin Silicon Film Using Epitaxial Silicide Layer |
| JP2008243831A (en) * | 2007-03-23 | 2008-10-09 | Nippon Denki Kagaku Co Ltd | Transferring method of thin-film element and transferring material |
| KR101462401B1 (en) * | 2008-06-12 | 2014-11-17 | 삼성전자주식회사 | Method for exfoliating carbonization catalyst from graphene sheet, method for transferring graphene sheet where carbonization catalyst is exfoliated to device, graphene sheet and device according to the methods |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018174351A1 (en) * | 2017-03-24 | 2018-09-27 | 서울대학교산학협력단 | Functional contact lens and manufacturing method therefor |
| KR20180108328A (en) * | 2017-03-24 | 2018-10-04 | 서울대학교산학협력단 | Functional contact lens and method for manufacturing the same |
| JP2020514835A (en) * | 2017-03-24 | 2020-05-21 | ソウル大学校産学協力団Ｓｅｏｕｌ Ｎａｔｉｏｎａｌ Ｕｎｉｖｅｒｓｉｔｙ Ｒ＆Ｄｂ Ｆｏｕｎｄａｔｉｏｎ | Functional contact lens and manufacturing method thereof |
| US11927835B2 (en) | 2017-03-24 | 2024-03-12 | Seoul National University R&Db Foundation | Functional contact lens and manufacturing method therefor |
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| WO2013168968A1 (en) | 2013-11-14 |
| KR101431595B1 (en) | 2014-08-22 |
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