KR20130105393A - 내용 참조 메모리 시스템 - Google Patents

내용 참조 메모리 시스템 Download PDF

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Publication number
KR20130105393A
KR20130105393A KR1020130024353A KR20130024353A KR20130105393A KR 20130105393 A KR20130105393 A KR 20130105393A KR 1020130024353 A KR1020130024353 A KR 1020130024353A KR 20130024353 A KR20130024353 A KR 20130024353A KR 20130105393 A KR20130105393 A KR 20130105393A
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South Korea
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KR1020130024353A
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English (en)
Korean (ko)
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미호코 와다
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르네사스 일렉트로닉스 가부시키가이샤
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Publication of KR20130105393A publication Critical patent/KR20130105393A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/02—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using magnetic elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements

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  • Static Random-Access Memory (AREA)
KR1020130024353A 2012-03-14 2013-03-07 내용 참조 메모리 시스템 Withdrawn KR20130105393A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012057060A JP2013191255A (ja) 2012-03-14 2012-03-14 内容参照メモリシステム
JPJP-P-2012-057060 2012-03-14

Publications (1)

Publication Number Publication Date
KR20130105393A true KR20130105393A (ko) 2013-09-25

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Family Applications (1)

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KR1020130024353A Withdrawn KR20130105393A (ko) 2012-03-14 2013-03-07 내용 참조 메모리 시스템

Country Status (5)

Country Link
US (2) US8891272B2 (https=)
JP (1) JP2013191255A (https=)
KR (1) KR20130105393A (https=)
CN (1) CN103310838A (https=)
TW (1) TW201346911A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10395719B2 (en) 2017-10-27 2019-08-27 Samsung Electronics Co., Ltd. Memory device driving matching lines according to priority

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9177646B2 (en) * 2013-05-06 2015-11-03 International Business Machines Corporation Implementing computational memory from content-addressable memory
CN104200838B (zh) * 2014-08-28 2016-08-24 平湖凌云信息科技有限公司 内容可寻址存储器及相似度智能匹配方法
KR20160074920A (ko) * 2014-12-19 2016-06-29 에스케이하이닉스 주식회사 메모리 장치
WO2017039687A1 (en) * 2015-09-04 2017-03-09 Hewlett Packard Enterprise Development Lp Content addressable memory
CN108141648B (zh) * 2015-10-13 2021-10-26 富士通株式会社 控制系统和控制方法
JP2017097940A (ja) * 2015-11-26 2017-06-01 ルネサスエレクトロニクス株式会社 半導体装置
JP6919846B2 (ja) 2016-03-28 2021-08-18 国立大学法人東北大学 メモリ装置
US10643701B2 (en) 2016-05-13 2020-05-05 Tohoku University Memory device and memory system
CN106443115B (zh) * 2016-09-26 2023-12-29 广州致远电子股份有限公司 一种基于深度存储的示波器
US10599566B2 (en) * 2016-11-29 2020-03-24 Qualcomm Incorporated Multi-mode cache invalidation
US10431265B2 (en) * 2017-03-23 2019-10-01 Silicon Storage Technology, Inc. Address fault detection in a flash memory system
JP6840621B2 (ja) * 2017-05-24 2021-03-10 ルネサスエレクトロニクス株式会社 内容参照メモリ
JP2018206452A (ja) * 2017-05-30 2018-12-27 ルネサスエレクトロニクス株式会社 内容参照メモリ及び半導体装置
JP6824115B2 (ja) * 2017-06-19 2021-02-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US10930348B1 (en) * 2019-08-13 2021-02-23 Hewlett Packard Enterprise Development Lp Content addressable memory-encoded crossbar array in dot product engines
US11537319B2 (en) * 2019-12-11 2022-12-27 Advanced Micro Devices, Inc. Content addressable memory with sub-field minimum and maximum clamping
US11188480B1 (en) * 2020-05-12 2021-11-30 Hewlett Packard Enterprise Development Lp System and method for cache directory TCAM error detection and correction
CN112098770B (zh) * 2020-08-20 2024-06-14 深圳市宏旺微电子有限公司 针对动态耦合故障模拟极端环境下的测试方法和装置
CN112509620A (zh) * 2020-11-30 2021-03-16 安徽大学 基于平衡预充与组译码的数据读取电路
US11899985B1 (en) 2021-03-31 2024-02-13 DreamBig Semiconductor Inc. Virtual modules in TCAM
KR102742481B1 (ko) * 2021-11-30 2024-12-12 실리콘 스토리지 테크놀로지 인크 메모리 시스템에서 어드레스 결함 검출을 수행하기 위한 계층적 rom 인코더 시스템
US11875850B2 (en) 2022-04-27 2024-01-16 Macronix International Co., Ltd. Content addressable memory device, content addressable memory cell and method for data searching with a range or single-bit data
TWI844013B (zh) * 2022-04-27 2024-06-01 旺宏電子股份有限公司 內容定址記憶體裝置、內容定址記憶體晶胞及其資料搜尋比對方法
CN116244247A (zh) * 2023-02-27 2023-06-09 鼎道智芯(上海)半导体有限公司 控制方法及装置、设备
US12417170B2 (en) * 2023-05-10 2025-09-16 Macronix International Co., Ltd. Computing system and method of operation thereof
KR102846245B1 (ko) * 2024-06-21 2025-08-14 성균관대학교산학협력단 메모리 소자와 그 동작 방법
CN120853633A (zh) * 2024-04-26 2025-10-28 长江存储科技有限责任公司 存储器装置及其操作方法、存储器系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002260389A (ja) * 2001-03-01 2002-09-13 Kawasaki Microelectronics Kk 連想メモリ
US6597595B1 (en) * 2001-08-03 2003-07-22 Netlogic Microsystems, Inc. Content addressable memory with error detection signaling
JP2003100086A (ja) 2001-09-25 2003-04-04 Fujitsu Ltd 連想メモリ回路
US6708250B2 (en) * 2001-09-28 2004-03-16 Mosaid Technologies Incorporated Circuit and method for performing variable width searches in a content addressable memory
US6967856B1 (en) 2002-04-10 2005-11-22 Integrated Device Technology, Inc. Content addressable memory (CAM) devices that utilize segmented match lines and word lines to support pipelined search and write operations and methods of operating same
JP2004355691A (ja) * 2003-05-28 2004-12-16 Hitachi Ltd 半導体装置
US7505295B1 (en) * 2004-07-01 2009-03-17 Netlogic Microsystems, Inc. Content addressable memory with multi-row write function
US7436688B1 (en) 2005-05-06 2008-10-14 Netlogic Microsystems, Inc. Priority encoder circuit and method
US20070247885A1 (en) 2006-04-25 2007-10-25 Renesas Technology Corp. Content addressable memory
JP2007317342A (ja) 2006-04-25 2007-12-06 Renesas Technology Corp 内容参照メモリ
JP2008257835A (ja) * 2007-03-13 2008-10-23 Renesas Technology Corp 半導体装置
US8630141B2 (en) * 2011-01-28 2014-01-14 Micron Technology, Inc. Circuits and methods for providing refresh addresses and alternate refresh addresses to be refreshed

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10395719B2 (en) 2017-10-27 2019-08-27 Samsung Electronics Co., Ltd. Memory device driving matching lines according to priority

Also Published As

Publication number Publication date
JP2013191255A (ja) 2013-09-26
TW201346911A (zh) 2013-11-16
US20130242632A1 (en) 2013-09-19
US20150003138A1 (en) 2015-01-01
CN103310838A (zh) 2013-09-18
US8891272B2 (en) 2014-11-18

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Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20130307

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WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid