CN103310838A - 内容可寻址存储器系统 - Google Patents

内容可寻址存储器系统 Download PDF

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Publication number
CN103310838A
CN103310838A CN2013100424324A CN201310042432A CN103310838A CN 103310838 A CN103310838 A CN 103310838A CN 2013100424324 A CN2013100424324 A CN 2013100424324A CN 201310042432 A CN201310042432 A CN 201310042432A CN 103310838 A CN103310838 A CN 103310838A
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China
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CN2013100424324A
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Chinese (zh)
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和田实邦子
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Renesas Electronics Corp
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Renesas Electronics Corp
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Publication of CN103310838A publication Critical patent/CN103310838A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/02—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using magnetic elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements

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  • Static Random-Access Memory (AREA)
CN2013100424324A 2012-03-14 2013-02-01 内容可寻址存储器系统 Pending CN103310838A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012057060A JP2013191255A (ja) 2012-03-14 2012-03-14 内容参照メモリシステム
JP2012-057060 2012-03-14

Publications (1)

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CN103310838A true CN103310838A (zh) 2013-09-18

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CN2013100424324A Pending CN103310838A (zh) 2012-03-14 2013-02-01 内容可寻址存储器系统

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US (2) US8891272B2 (https=)
JP (1) JP2013191255A (https=)
KR (1) KR20130105393A (https=)
CN (1) CN103310838A (https=)
TW (1) TW201346911A (https=)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104200838A (zh) * 2014-08-28 2014-12-10 平湖凌云信息科技有限公司 内容可寻址存储器及相似度智能匹配方法
CN106443115A (zh) * 2016-09-26 2017-02-22 广州致远电子股份有限公司 一种基于深度存储的示波器
CN106803428A (zh) * 2015-11-26 2017-06-06 瑞萨电子株式会社 半导体器件
CN109983446A (zh) * 2016-11-29 2019-07-05 高通股份有限公司 多模式缓存无效
CN110431634A (zh) * 2017-03-23 2019-11-08 硅存储技术股份有限公司 闪存存储器系统中的地址故障检测
CN112098770A (zh) * 2020-08-20 2020-12-18 深圳市宏旺微电子有限公司 针对动态耦合故障模拟极端环境下的测试方法和装置
CN112397123A (zh) * 2019-08-13 2021-02-23 慧与发展有限责任合伙企业 点积引擎中的内容可寻址存储器编码的交叉杆阵列
CN112509620A (zh) * 2020-11-30 2021-03-16 安徽大学 基于平衡预充与组译码的数据读取电路
CN113656212A (zh) * 2020-05-12 2021-11-16 慧与发展有限责任合伙企业 用于缓存目录tcam错误检测和纠正的系统和方法
CN114902336B (zh) * 2019-12-11 2023-08-11 超威半导体公司 具有子字段最小和最大箝位的内容可寻址存储器

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US9177646B2 (en) * 2013-05-06 2015-11-03 International Business Machines Corporation Implementing computational memory from content-addressable memory
KR20160074920A (ko) * 2014-12-19 2016-06-29 에스케이하이닉스 주식회사 메모리 장치
WO2017039687A1 (en) * 2015-09-04 2017-03-09 Hewlett Packard Enterprise Development Lp Content addressable memory
CN108141648B (zh) * 2015-10-13 2021-10-26 富士通株式会社 控制系统和控制方法
JP6919846B2 (ja) 2016-03-28 2021-08-18 国立大学法人東北大学 メモリ装置
US10643701B2 (en) 2016-05-13 2020-05-05 Tohoku University Memory device and memory system
JP6840621B2 (ja) * 2017-05-24 2021-03-10 ルネサスエレクトロニクス株式会社 内容参照メモリ
JP2018206452A (ja) * 2017-05-30 2018-12-27 ルネサスエレクトロニクス株式会社 内容参照メモリ及び半導体装置
JP6824115B2 (ja) * 2017-06-19 2021-02-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR102379729B1 (ko) 2017-10-27 2022-03-29 삼성전자주식회사 우선 순위에 따라 매칭 라인들을 구동하는 메모리 장치
US11899985B1 (en) 2021-03-31 2024-02-13 DreamBig Semiconductor Inc. Virtual modules in TCAM
KR102742481B1 (ko) * 2021-11-30 2024-12-12 실리콘 스토리지 테크놀로지 인크 메모리 시스템에서 어드레스 결함 검출을 수행하기 위한 계층적 rom 인코더 시스템
US11875850B2 (en) 2022-04-27 2024-01-16 Macronix International Co., Ltd. Content addressable memory device, content addressable memory cell and method for data searching with a range or single-bit data
TWI844013B (zh) * 2022-04-27 2024-06-01 旺宏電子股份有限公司 內容定址記憶體裝置、內容定址記憶體晶胞及其資料搜尋比對方法
CN116244247A (zh) * 2023-02-27 2023-06-09 鼎道智芯(上海)半导体有限公司 控制方法及装置、设备
US12417170B2 (en) * 2023-05-10 2025-09-16 Macronix International Co., Ltd. Computing system and method of operation thereof
KR102846245B1 (ko) * 2024-06-21 2025-08-14 성균관대학교산학협력단 메모리 소자와 그 동작 방법
CN120853633A (zh) * 2024-04-26 2025-10-28 长江存储科技有限责任公司 存储器装置及其操作方法、存储器系统

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US6728124B1 (en) * 2001-08-03 2004-04-27 Netlogic Microsystems, Inc. Content addressable memory with error detection signaling
CN1561522A (zh) * 2001-09-28 2005-01-05 睦塞德技术公司 用于在按内容寻址的存储器中执行可变宽度搜索的电路和方法
US20060198210A1 (en) * 2003-05-28 2006-09-07 Hitachi, Ltd. Semiconductor device
US7505295B1 (en) * 2004-07-01 2009-03-17 Netlogic Microsystems, Inc. Content addressable memory with multi-row write function

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JP2002260389A (ja) * 2001-03-01 2002-09-13 Kawasaki Microelectronics Kk 連想メモリ
JP2003100086A (ja) 2001-09-25 2003-04-04 Fujitsu Ltd 連想メモリ回路
US6967856B1 (en) 2002-04-10 2005-11-22 Integrated Device Technology, Inc. Content addressable memory (CAM) devices that utilize segmented match lines and word lines to support pipelined search and write operations and methods of operating same
US7436688B1 (en) 2005-05-06 2008-10-14 Netlogic Microsystems, Inc. Priority encoder circuit and method
US20070247885A1 (en) 2006-04-25 2007-10-25 Renesas Technology Corp. Content addressable memory
JP2007317342A (ja) 2006-04-25 2007-12-06 Renesas Technology Corp 内容参照メモリ
JP2008257835A (ja) * 2007-03-13 2008-10-23 Renesas Technology Corp 半導体装置
US8630141B2 (en) * 2011-01-28 2014-01-14 Micron Technology, Inc. Circuits and methods for providing refresh addresses and alternate refresh addresses to be refreshed

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US6728124B1 (en) * 2001-08-03 2004-04-27 Netlogic Microsystems, Inc. Content addressable memory with error detection signaling
CN1561522A (zh) * 2001-09-28 2005-01-05 睦塞德技术公司 用于在按内容寻址的存储器中执行可变宽度搜索的电路和方法
US20060198210A1 (en) * 2003-05-28 2006-09-07 Hitachi, Ltd. Semiconductor device
US7505295B1 (en) * 2004-07-01 2009-03-17 Netlogic Microsystems, Inc. Content addressable memory with multi-row write function

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104200838B (zh) * 2014-08-28 2016-08-24 平湖凌云信息科技有限公司 内容可寻址存储器及相似度智能匹配方法
CN104200838A (zh) * 2014-08-28 2014-12-10 平湖凌云信息科技有限公司 内容可寻址存储器及相似度智能匹配方法
CN106803428A (zh) * 2015-11-26 2017-06-06 瑞萨电子株式会社 半导体器件
CN106443115A (zh) * 2016-09-26 2017-02-22 广州致远电子股份有限公司 一种基于深度存储的示波器
CN106443115B (zh) * 2016-09-26 2023-12-29 广州致远电子股份有限公司 一种基于深度存储的示波器
CN109983446A (zh) * 2016-11-29 2019-07-05 高通股份有限公司 多模式缓存无效
CN110431634B (zh) * 2017-03-23 2023-07-25 硅存储技术股份有限公司 闪存存储器系统中的地址故障检测
CN110431634A (zh) * 2017-03-23 2019-11-08 硅存储技术股份有限公司 闪存存储器系统中的地址故障检测
CN112397123A (zh) * 2019-08-13 2021-02-23 慧与发展有限责任合伙企业 点积引擎中的内容可寻址存储器编码的交叉杆阵列
CN112397123B (zh) * 2019-08-13 2022-02-18 慧与发展有限责任合伙企业 点积引擎三元内容可寻址存储器以及在其上实现的方法
CN114902336B (zh) * 2019-12-11 2023-08-11 超威半导体公司 具有子字段最小和最大箝位的内容可寻址存储器
CN113656212A (zh) * 2020-05-12 2021-11-16 慧与发展有限责任合伙企业 用于缓存目录tcam错误检测和纠正的系统和方法
CN113656212B (zh) * 2020-05-12 2022-08-02 慧与发展有限责任合伙企业 用于缓存目录tcam错误检测和纠正的系统和方法
CN112098770A (zh) * 2020-08-20 2020-12-18 深圳市宏旺微电子有限公司 针对动态耦合故障模拟极端环境下的测试方法和装置
CN112509620A (zh) * 2020-11-30 2021-03-16 安徽大学 基于平衡预充与组译码的数据读取电路

Also Published As

Publication number Publication date
JP2013191255A (ja) 2013-09-26
TW201346911A (zh) 2013-11-16
KR20130105393A (ko) 2013-09-25
US20130242632A1 (en) 2013-09-19
US20150003138A1 (en) 2015-01-01
US8891272B2 (en) 2014-11-18

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