KR20130088369A - Exposure system of improved mask drooping - Google Patents

Exposure system of improved mask drooping Download PDF

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Publication number
KR20130088369A
KR20130088369A KR1020120009570A KR20120009570A KR20130088369A KR 20130088369 A KR20130088369 A KR 20130088369A KR 1020120009570 A KR1020120009570 A KR 1020120009570A KR 20120009570 A KR20120009570 A KR 20120009570A KR 20130088369 A KR20130088369 A KR 20130088369A
Authority
KR
South Korea
Prior art keywords
mask
chuck
light source
substrate
edge
Prior art date
Application number
KR1020120009570A
Other languages
Korean (ko)
Inventor
김종수
위해성
이창환
신용화
한순수
Original Assignee
나노전광 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 나노전광 주식회사 filed Critical 나노전광 주식회사
Priority to KR1020120009570A priority Critical patent/KR20130088369A/en
Publication of KR20130088369A publication Critical patent/KR20130088369A/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/70391—Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: An exposure device is provided to offer uniform patterning effects by preventing the sagging of a mask by using a mask chuck of a structure dragging the boundary of the mask. CONSTITUTION: An exposure device capable of solving a mask sagging problem includes a light source unit, a stage, a chuck for a circuit board, and a mask chuck (100). The light source unit outputs beams comprising a light source and an optical system. The stage supports the circuit board receiving a beam from the light source unit. The chuck for the circuit board fixes the stage on the circuit board. The mask chuck prevents a mask from being sagged by pulling the boundary of a mask (200). [Reference numerals] (AA) No mask sagging

Description

Exposure system with improved mask drooping

The present invention relates to an exposure apparatus having improved mask deflection, and more particularly, to an exposure apparatus capable of patterning uniform line width by preventing mask deflection using a chuck having a structure that pulls a mask at an end.

1 is a UV lamp for generating a UV (365 nm) beam with a conventional large-area exposure apparatus, a cold mirror for filtering out wavelengths of components deviating from the UV beam at 365 nm, and a cold mirror. Homogenizer optical system for homogenizing the beam reflected from the beam), and a folding mirror for reflecting the homogenized beam through the homogenizer toward the substrate to be exposed and incident the beam to the exposure surface with parallel light. . In such a large area exposure system, a mask for projecting a beam and transferring a pattern also uses a large area mask.

As shown in FIG. 2, the mask is placed on a substrate to be exposed by being inserted into a mask chuck or a mask holder, and there is a contact method that is in close contact with the substrate during exposure, and is in a state of being close to the substrate with a gap of several um to 20 um. There is a non-contact method. In any case, in large area exposure, the mask size becomes large and sagging occurs in the center portion of the mask.

As shown in FIG. 3, the mask chuck is configured to hold the edge portion of the mask, and since there is no pedestal across the center of the mask, the larger the mask size, the more difficult it is to prevent sagging of the center portion. As the mask size increases, the thickness is increased so that there is no deflection. However, in the exposure method in which the mask is placed horizontally, there is a difference in degree, but the deflection cannot be eliminated. Differences can occur at the edges.

An object of the present invention for solving the above problems is to improve the structure of the mask chuck to pull the edge of the mask structure to prevent the deflection of the mask center portion to prevent the deflection of the mask to improve the exposure of the line width To provide.

An exposure apparatus for improving the deflection of the mask of the present invention for achieving the above object comprises a light source unit which is composed of a light source and an optical system to output a beam (Beam); A stage for receiving a beam from the light source and supporting a substrate on which exposure is performed; A substrate chuck for fixing and placing a substrate on the stage; And a mask chuck positioned on the substrate chuck to pull the edge of the mask to prevent sagging of the mask.

The mask chuck has a hook or column structure penetrating through a hole (Hole) in the mask edge, characterized in that to pull the mask edge in the outward direction after loading the mask.

One or more holes are formed at the edges of each side of the mask, and the positions thereof are arranged such that the force applied through the holes acts uniformly on the mask.

The mask chuck is mounted on both ends of the mask, or the circumference of the mask in close up and down directions to hold the edge of the mask with the up and down pressure, and then pull the mask.

The exposure apparatus having improved mask deflection according to the present invention uses a mask chuck having a structure that pulls the edge of the mask, thereby preventing the deflection at the center of the mask, thereby making it possible to pattern a uniform line width.

1 is a view showing a conventional exposure apparatus.
2 is a view showing a perspective view of a conventional mask chuck.
3 is a view showing a conventional mask chuck.
4 is a view showing an embodiment of the mask chuck of the present invention.

Hereinafter, an exposure apparatus for improving the mask deflection of the present invention will be described in detail with reference to the accompanying drawings.

An exposure apparatus having improved mask deflection includes a light source unit, a stage, a substrate chuck, and a mask chuck 100.

The light source unit includes a light source and an optical system to output a beam.

The stage receives a beam from a light source unit and supports a substrate on which exposure is performed.

The substrate chuck is positioned on the stage, and the substrate chuck is fixed by placing or holding the substrate.

The mask chuck 100 fixes the mask 200 that determines the exposure pattern when the exposure operation is performed by irradiating a beam onto a substrate, and pulls the edge of the mask 200 to prevent the mask 200 from sagging. This is to be made constant, more specifically as follows.

4 is a view showing an embodiment of the mask chuck of the present invention.

Referring to FIG. 4, the mask 200 drills one or more holes 210 at the edges of each surface of the mask 200, and positions the mask 200 so that the pulling force through the holes 210 acts uniformly on the mask. .

In addition, the mask chuck 100 consists of a hook or column structure penetrating the hole 210 drilled in the mask 200, and after loading the mask 200, the mask 200 is horizontally outward when the mask 200 sags. ) To fix the mask 200 so as not to sag.

The mask chuck 100 as described above may be implemented in another form. In another form, the mask chuck 100 may be formed in the form of a frame or in the form of tongs to form both ends or the circumference of the mask 200 that does not penetrate the hole 210. , Hold tightly to the bottom to fix the mask 200 in the up and down pressure, and when the mask 200 sag pulls the mask 200 horizontally in the outward direction to fix the mask 200 does not sag.

While the present invention has been particularly shown and described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, Of course, this is possible. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined by the equivalents as well as the claims that follow.

100: mask chuck 200: mask
210: hall

Claims (4)

In a large area exposure apparatus,
A light source unit including a light source and an optical system to output a beam;
A stage for receiving a beam from the light source and supporting a substrate on which exposure is performed;
A substrate chuck for fixing and placing a substrate on the stage; And
And a mask chuck positioned on the substrate chuck to pull the edge of the mask to prevent the mask from sagging.
The method according to claim 1,
The mask chuck has a hook or hole structure penetrating through the hole (Hole) in the mask edge to improve the mask deflection, characterized in that to pull the mask edge in the outward direction after loading the mask.
The method according to claim 2,
And at least one hole is formed at an edge of each side of the mask, and the position of the hole is arranged so that the pulling force through the hole acts uniformly on the mask.
The method according to claim 1,
The mask chuck is exposed to both sides, or the circumference of the mask up close and down, the mask apparatus to improve the deflection of the mask, characterized in that to pull up after pulling the mask edge up and down pressure.
KR1020120009570A 2012-01-31 2012-01-31 Exposure system of improved mask drooping KR20130088369A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020120009570A KR20130088369A (en) 2012-01-31 2012-01-31 Exposure system of improved mask drooping

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120009570A KR20130088369A (en) 2012-01-31 2012-01-31 Exposure system of improved mask drooping

Publications (1)

Publication Number Publication Date
KR20130088369A true KR20130088369A (en) 2013-08-08

Family

ID=49214716

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120009570A KR20130088369A (en) 2012-01-31 2012-01-31 Exposure system of improved mask drooping

Country Status (1)

Country Link
KR (1) KR20130088369A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160028899A (en) * 2014-09-04 2016-03-14 삼성전자주식회사 Apparatus for protecting extreme ultra violet(EUV) mask, and EUV exposure apparatus comprising the same
KR20160042317A (en) * 2014-10-08 2016-04-19 삼성디스플레이 주식회사 Deposition apparatus and deposition method using the same
KR20160101240A (en) * 2015-02-13 2016-08-25 (주)세명백트론 Exposure apparatus
US9522764B2 (en) 2014-10-08 2016-12-20 Samsung Display Co., Ltd. Packaging apparatus for deposition masks

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160028899A (en) * 2014-09-04 2016-03-14 삼성전자주식회사 Apparatus for protecting extreme ultra violet(EUV) mask, and EUV exposure apparatus comprising the same
KR20160042317A (en) * 2014-10-08 2016-04-19 삼성디스플레이 주식회사 Deposition apparatus and deposition method using the same
US9522764B2 (en) 2014-10-08 2016-12-20 Samsung Display Co., Ltd. Packaging apparatus for deposition masks
US9713818B2 (en) 2014-10-08 2017-07-25 Samsung Display Co., Ltd. Deposition apparatus and deposition method using the same
KR20160101240A (en) * 2015-02-13 2016-08-25 (주)세명백트론 Exposure apparatus

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