KR20130086441A - Semiconductor package processing system and semiconductor package processing method - Google Patents

Abstract

PURPOSE: An apparatus and method for processing a semiconductor package are provided to simplify a manufacturing facility by replacing a thermal chemical process with a laser machining process. CONSTITUTION: A first laser irradiating unit (1300) irradiates a laser for forming an opening groove. The laser from the first laser irradiating unit has a wavelength of an infrared range. A second laser irradiating unit (1400) irradiates a laser of a wavelength which is different from the wavelength of the laser from the first laser irradiating unit to the opening groove. The laser from the second laser irradiating unit has a wavelength of an ultraviolet range. A control unit controls the first laser irradiating unit and the second laser irradiating unit. [Reference numerals] (1100) On-loading unit; (1200) Transfer unit; (1300) First laser irradiating unit; (1400) Second laser irradiating unit; (1500) Reflow processing unit; (1600) Off-loading unit; (1700) Control unit; (1710) Memory; (1720) Processing device; (1800) Vision part; (1910) Thickness measuring device; (1960) Thickness inputting device

Description

Semiconductor Package Processing System and Semiconductor Package Processing Method

The present invention relates to a semiconductor package processing apparatus and a semiconductor package processing method. More specifically, the present invention exposes solder balls, etc., which are provided on the upper surface of the circuit board disposed below in the process of manufacturing a package on package (POP) type stacked semiconductor package, to be laminated on the lower surface of the circuit board. A semiconductor package processing apparatus and a semiconductor package processing method for connecting to a solder ball or the like provided.

As semiconductor products or parts become smaller, various semiconductor packaging technologies such as multi chip package (MCP) and package on package (PoP) technologies, which can realize high integration of semiconductor packages, are being developed.

The latter technique is a technique of stacking a semiconductor chip or a circuit board or semiconductor package having a circuit built thereon, respectively, and a plurality of layers for electrical connection with a semiconductor package stacked on the upper surface of a semiconductor package disposed below. Solder balls may be provided.

In this case, a bonding process for bonding the solder balls provided on the upper surface of the semiconductor package disposed below and the lower surface of the semiconductor package disposed above may be performed.

As a premise of the solder ball bonding process, the semiconductor package disposed in the lower portion forms an opening groove to expose each solder ball, removes foreign substances remaining in the opening groove, and bonds the solder balls of the semiconductor package disposed in the upper and lower portions thereof. To perform the process.

Since the semiconductor package disposed below may be packaged with a molding material to protect or insulate the mounted circuit or the semiconductor, an opening groove to expose each solder ball should be formed as a premise of the bonding process.

In this case, a laser beam may be used in the process of forming the opening groove, and after removing the molding material by the laser beam, foreign matter remaining in the opening groove should be removed by a thermochemical method.

If foreign matters are not removed and residues of the molding material, which are not completely removed during the formation of the opening grooves on the side of the opening grooves, foreign materials are interposed between the solder balls during the bonding process, which may cause a problem of deteriorating the electrical characteristics of the semiconductor package. .

In addition, foreign matter remaining in the opening groove may exist on the exposed solder ball surface in addition to the opening groove side. This may be due to lack of laser light to be irradiated or thickness variation of the molding material.

In addition, when there is an excessive amount of laser light irradiated onto the solder ball, the surface of the solder ball may be worn, which may cause a problem of deterioration of electrical characteristics of the semiconductor package after bonding, similar to the molding material residue.

In addition, the method of removing the residue of the molding material or the bonding process may be carried out through a thermochemical process as described above, but such a thermochemical method is complicated because the equipment is complicated and requires the input of chemicals such as various chemicals Or disadvantages in terms of work efficiency.

The present invention is to provide a semiconductor package processing apparatus and a semiconductor package processing method that can simplify the manufacturing equipment and increase the manufacturing efficiency in the manufacturing process of a package on package (POP) type stacked semiconductor package. We assume problem to do.

In order to solve the above problems, the present invention includes a plurality of solder balls, the first laser processing process for processing by a laser beam to expose each solder ball to a semiconductor package packaged with a molding material, and into the opening groove Provided is a semiconductor package processing method comprising a second laser processing step of processing by a laser light having a wavelength different from the wavelength of the laser light irradiated in the first laser processing step.

In this case, the first laser processing process may include an opening groove forming step of forming opening grooves to expose each of the solder balls by irradiating a molding material on the solder ball of the semiconductor package with a laser beam.

Here, the second laser processing process may include a foreign material removal step of removing foreign matter remaining in the opening groove by irradiating a laser light having a wavelength different from the wavelength of the laser light of the first laser processing inside the opening groove. Can be.

In addition, the foreign material may be a residual molding material remaining on the upper surface of the solder ball or molding material residues in the opening groove.

The second laser machining process may include a solder ball polishing step of polishing the solder ball surface by irradiating a surface of the solder ball exposed through the opening groove with a laser light having a wavelength different from that of the laser light of the first laser processing process. Can be.

In this case, the wavelength of the laser light used in the second laser processing may be shorter than the wavelength of the laser light used in the first laser processing.

In addition, the laser light used in the first laser processing may be a laser light in the infrared range.

In addition, the laser light used in the second laser processing may be laser light in an ultraviolet range.

In this case, it may include a molding material thickness determining step of determining the thickness of the molding material.

Here, the molding material thickness determining step may be determined by the input thickness of the molding material, or the thickness of the molding material may be determined by measuring the thickness of the molding material.

In addition, according to the thickness determined in the molding material thickness determining step, at least one of the output, the irradiation time, the irradiation area and the focal length of the laser light irradiated in the first laser processing and the second laser processing can be adjusted.

The method may further include a substrate bonding process of laminating and bonding the semiconductor package on the semiconductor package on which the opening groove is formed after the second laser processing.

In this case, in the substrate bonding process, the semiconductor package stacking step of stacking the upper semiconductor package on the lower semiconductor package disposed below, and seating the solder ball provided on the lower semiconductor package in the opening groove provided on the upper surface of the lower semiconductor package And an electrode bonding step of bonding the solder ball of the upper semiconductor package and the solder ball of the lower semiconductor package in a reflow process in the opening groove after the semiconductor package stacking step.

In addition, in order to solve the above problems, the present invention, the first laser irradiator for irradiating the laser light to form the opening groove to expose the solder ball by removing the molding material of the semiconductor package, the laser beam irradiated from the first laser irradiation unit A semiconductor package processing apparatus includes a second laser irradiator for irradiating a laser light having a wavelength different from that of the opening into the opening groove, and a controller for controlling the first laser irradiator and the second laser irradiator.

In this case, the laser light irradiated from the first laser irradiator may have a wavelength in the infrared region.

Here, the laser light irradiated from the second laser irradiation unit may have a wavelength in the ultraviolet region.

In addition, the semiconductor package is stacked on the semiconductor package in which the opening groove is formed by the laser beam irradiated from the first laser irradiation part and the second laser irradiation part, and is exposed to the solder ball and the opening groove provided on the lower surface of the semiconductor package stacked thereon. The apparatus may further include a reflow processing unit for bonding the solder balls.

The apparatus may further include a thickness determiner for determining a thickness of the molding material of the semiconductor package.

In this case, the thickness determining unit may include at least one of a thickness measuring device for measuring the thickness of the molding material and a thickness input device for inputting the thickness of the molding material.

The control unit may include a memory in which the thickness of the molding material determined by the thickness determining unit is stored, and the laser irradiated toward each opening groove by the first laser irradiation unit and the second laser irradiation unit according to the thickness of the molding material stored in the memory. And a processing device for determining at least one of light output, irradiation time, irradiation area, and focal length.

The apparatus further includes a vision unit for photographing an upper surface of the molding material, wherein the controller compares an image of each opening groove photographed by the vision unit with an image stored in a memory provided in the controller, and the first laser irradiation unit And at least one of an output, an irradiation time, an irradiation area, and a focal length of the laser beam irradiated to each opening groove side by the second laser irradiation unit.

According to the semiconductor package processing method according to the present invention, it is possible to minimize the thermochemical process required in the manufacturing process of a package on package (PoP) type semiconductor package.

In addition, according to the semiconductor package processing apparatus and the semiconductor package processing method according to the present invention, since the thermochemical process can be replaced by a laser processing process, manufacturing equipment for manufacturing a package on package (PoP) type semiconductor package It is possible to simplify or downsize.

In addition, according to the semiconductor package processing apparatus and the semiconductor package processing method according to the present invention, since the process before the solder ball bonding process can be performed only in the laser process, the processing time of the semiconductor package can be shortened, thereby increasing the manufacturing efficiency and the like. You can.

In addition, according to the semiconductor package processing apparatus and the semiconductor package processing method according to the present invention, to reduce the deterioration of electrical characteristics through the solder ball bonded by minimizing foreign matter or voids remaining in the bonded solder ball of the package-on-package type semiconductor package. can do.

In addition, the semiconductor package processing method or processing apparatus according to the present invention can be used by using a laser beam having a different physical processability, to form a rough opening groove and the micro-processing process such as molding material removal or solder ball polishing. Therefore, it is possible to shorten the time required for processing a semiconductor package, to improve energy efficiency, and to reduce costs.

1 shows a block diagram of a semiconductor package processing method according to the present invention.
2 is a block diagram of a semiconductor package processing apparatus according to the present invention.
3 shows a cross-sectional view of a semiconductor package to be stacked which is the subject of a semiconductor package processing method according to the invention.
4 illustrates a first laser processing process of a semiconductor package processing method using a semiconductor package processing apparatus and a semiconductor package processing method according to the present invention.
FIG. 5 is a view illustrating a second laser processing process of a semiconductor package processing method using a semiconductor package processing apparatus and a semiconductor package processing method according to the present invention.
6 illustrates a process of bonding a semiconductor package by a semiconductor package processing apparatus and a semiconductor package processing method according to the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like numbers refer to like elements throughout.

1 shows a block diagram of a semiconductor package processing method according to the present invention. Specifically, FIG. 1 (a) shows a schematic block diagram of a semiconductor package processing method according to the present invention, and FIG. 1 (b) shows a detailed block diagram of a specific embodiment of the semiconductor package processing method according to the present invention. do.

The semiconductor package processing apparatus and the semiconductor package processing method according to the present invention are for the production of a package on package (PoP) type semiconductor package.

Each semiconductor package constituting the package-on-package type semiconductor package is provided with a plurality of solder ball-type electrodes on the upper and lower surfaces of the circuit board, and may be packaged with a molding material to protect or insulate it.

Therefore, as a premise for laminating semiconductor packages and bonding each electrode, an opening groove for exposing solder balls of a semiconductor package packaged with a molding material is exposed.

When the opening groove in which the solder balls are exposed is formed in one semiconductor package, the semiconductor package may be bonded after the solder balls of the other semiconductor package are seated.

The semiconductor package processing method according to the present invention includes a first laser processing process (S200) including a plurality of bump electrodes, and processing by laser light to expose each bump electrode on a first circuit board packaged with a molding material, and The laser beam may include a second laser machining process S300 processed by a laser light having a wavelength different from a wavelength of the laser light irradiated in the first laser machining process S200 into the opening groove.

The semiconductor package processing method according to the present invention uses a laser beam to form the opening groove so that the solder ball of the semiconductor package is exposed.

The semiconductor package processing method according to the present invention may specifically include a two-stage laser processing process.

As shown in Figure 1 (a), the package processing method according to the present invention is a first laser processing process (S200) for processing by laser light so that each bump electrode is exposed to a first circuit board packaged with a molding material And a second laser machining process S300 which is processed by a laser light having a wavelength different from the wavelength of the laser light irradiated in the first laser machining process S200 into the opening groove.

The different wavelength of the laser light used in each laser processing means that there is a difference in the molding, grinding, and removing ability of the molding material of the laser light. Specifically, the laser light has a peak power and a fine inversely proportional to the wavelength. It can be said that it has workability.

Therefore, the semiconductor package processing method or processing apparatus according to the present invention can be used by using a laser beam having a different machinability, and forming a rough opening groove and a fine processing process such as debris removal or solder ball polishing.

When both the process of forming the roughly opening groove and the process of fine processing such as removing the residue or polishing the solder ball with only the laser light having a large workability due to the relatively short wavelength, there is no difference in the processing result, but the time required increases. It is not preferable because the energy efficiency may be lowered and the cost may be increased as a result.

The first laser processing process (S200) is a process for exposing a solder ball provided at a lower portion by forming an opening groove to a predetermined depth by irradiating a laser beam onto a molding material having a solder ball packaged thereon.

In addition, the second laser processing process S300 is a process of preparing a subsequent semiconductor package bonding process by removing foreign substances such as molding material remaining in the opening grooves or polishing the solder ball surface.

In addition, since the package processing method according to the present invention forms an opening groove using a laser beam, the thickness of the molding material may vary according to the type of semiconductor package. In addition, since the thickness variation of the molding material may exist even in the same semiconductor package, a molding material thickness determining process S100 for determining the thickness of the molding material of the semiconductor package may be further included in advance of two consecutive laser processing processes. Molding material thickness determination process (S100) may be used to measure the thickness, or the operator inputs the thickness. This will be described later.

In addition, the package processing method according to the present invention may further include a semiconductor package bonding process (S400) in two consecutive laser processing process.

The semiconductor package bonding process (S400) is a process of stacking and bonding another semiconductor package on the semiconductor package in a state where each solder ball is exposed. The semiconductor package bonding process S400 may include a reflow process.

A specific embodiment of the semiconductor package processing method according to the present invention will be described with reference to FIG. 1B.

Molding material thickness determination process (S100) of the semiconductor package processing method according to the present invention may specifically include a molding material thickness measuring step (S110) or molding material thickness input step (S130).

Alternatively, the molding material thickness measuring step S110 may be performed by a thickness measuring sensor provided in the semiconductor package processing apparatus according to the present invention. In addition, the molding material thickness input step (S130) of the molding material thickness determination process (S100) of the semiconductor package processing method according to the present invention is a method of directly inputting the thickness of the molding material, etc. by the operator through a thickness input device to be described later. The thickness of the molding material can be determined.

The molding material thickness determining process S100 may be performed together with or separately from the molding material thickness measuring step S110 and the molding material thickness input step 130.

That is, the thickness of the molding material may be input in advance by the operator in the process of processing the semiconductor package, and accordingly, control parameters (such as speed, delay, power, etc.), irradiation time, and irradiation area (range) of the laser beam irradiated from the laser irradiation unit may be input. Etc.), a focal length and a processing form (radiation trajectory, pattern, shape, etc. of laser light) may be determined, but since there may exist a thickness variation of the molding material, the thickness of the molding material may be performed by performing a separate molding material thickness measuring step (S110). The deviation can be calculated to finely correct the control parameters, the irradiation time, the irradiation area, the focal length and the processing form of the laser beam irradiated from the laser irradiation unit.

In this case, the calculated thickness deviation may be reflected when determining the control parameter, irradiation time, irradiation area, focal length, processing form, and the like of the laser beam irradiated from the laser irradiation unit.

The first laser processing process S200 may include an opening groove forming step S210. The first laser processing process (S200) may include an opening groove forming step (S210) of forming an opening groove on a surface of the molding material by using a laser beam irradiated by the first laser irradiation unit.

In addition, the laser light used in the opening groove forming step S210 may be laser light in an infrared range. The laser light in the infrared range may be, for example, a carbon dioxide laser (wavelength of 10600 nanometers) or a YAG laser (wavelength of 1064 nanometers) or the like.

Infrared laser light, such as a carbon dioxide laser, has a relatively high efficiency, and thus is widely used in processing.

The laser beam used in the opening groove forming step (S210) may remove the molding material to form the opening groove from the upper surface of the molding material to a predetermined depth, thereby forming a groove having a predetermined depth and exposing the solder ball embedded in the lower portion thereof. .

In addition, the semiconductor package processing method according to the present invention may include a second laser processing (S300) following the first laser processing (S200).

When the upper surface of the solder ball to be exposed after the opening groove forming process is not sufficiently exposed in the opening groove formed by the first laser processing process (S200), or the molding material residue inside the opening groove is exposed to the laser beam. This may cause problems such as the case of remaining unremoved and / or excessive removal of the molding material and damage of the exposed solder ball by laser.

As such, when the molding material is not sufficiently removed, the residue of the molding material and the surface of the solder ball are both damaged, even if the bonding between the solder balls is performed while the substrate is laminated, foreign matter is interposed between the solder balls or induces the generation of voids. As a result, sufficient electrical properties may be degraded in the bonded state.

Conventionally, a thermochemical process using a reflow process for removing a foreign matter in an opening groove or polishing a solder ball surface, for example, by a chemical method using a heating furnace. This was used.

The thermochemical process equipment is disadvantageous in terms of cost or work efficiency because the equipment for the process is complicated and requires the input of various chemicals such as chemicals.

The semiconductor package processing method according to the present invention replaces the foreign material removal process and the solder ball surface polishing process by the thermochemical process with the second laser processing process (S300).

The laser light irradiated in the second laser machining process S300 may have a wavelength different from that of the laser light of the first laser machining process S200. That is, since the laser light irradiated in the second laser machining process S300 has a wavelength different from that of the laser light of the first laser machining process S200, it means that the laser light having different micromachinability is used.

For example, the laser light used in the second laser processing process S300 may be a laser light of a different type from the laser light of the first laser processing process S200, and specifically, the second laser processing process S300. The wavelength of the laser light used in may be shorter than the laser light used in the first laser processing process (S200).

When the laser light is classified by the wavelength range, the laser light may be classified into an infrared ray region, a visible ray region, and an ultraviolet ray region, and may be used in the laser beam and the second laser machining process S300 of the first laser processing S200. The laser light may be laser light in the same frequency domain, or may be laser light in different frequency domains, respectively. However, in consideration of the fine workability of the molding material due to the nature of the processing process, the wavelength of the laser light used in the second laser processing (S300) is preferably shorter than the laser light used in the first laser processing (S200). .

Since the laser light used in the second laser machining process S300 has a shorter wavelength and a higher peak power than the laser light used in the first laser machining process S200, the second laser machining process S300. When irradiating the molding material with the laser light used in the), it is easier to finely crush and remove the molding material than the laser light used in the first laser processing process (S200) having a relatively long wavelength. Therefore, the laser light used in the second laser processing process S300 is easy to crush and remove the residual molding material or the molding material residue in the opening groove.

In addition, the laser light used in the second laser machining process S300 having a relatively high peak power may further refine the surface of the solder ball damaged by the laser light used in the first laser machining process S200. Since the surface of the solder ball 121b may be finely formed, the surface roughness may be further reduced.

Therefore, the second laser machining process S300 removes foreign substances, etc. using a laser light having a wavelength shorter than that of the laser beam used in the first laser machining process S200 after the first laser machining process S200, and the solder ball electrode. Can be polished.

Specifically, the laser light used in the second laser processing process S300 may be laser light in the ultraviolet range. For example, the laser light used in the second laser processing process S300 may be an excimer laser, an argon laser, a YAG laser (wavelength of 266 nanometers), or the like.

In summary, in the second laser machining process S300, when the upper surface of the solder ball to be exposed is not sufficiently exposed in the formed opening groove or the molding material residue is not removed by the laser light in the opening groove. If there is still remaining, to remove the solder ball to remove the residual or remaining residue of the molding material to remove each of the residue 310 and the solder ball polishing step (S330) for polishing the surface of the solder ball electrode damaged by the laser light It may include.

The foreign material removal step 310 and the solder ball polishing step (S330) may be selectively performed or may be performed sequentially.

In this case, the foreign material removing step 310 and the solder ball polishing step (S330) may vary the control parameters, irradiation time, irradiation area, focal length and processing form of the laser light to be irradiated.

In the foreign material removing step 310, when the main purpose is to remove foreign substances remaining on the inner wall of the opening groove, the irradiation area of the irradiated laser light may be the inner surface of the opening groove, and the molding material may be formed on the upper surface of the solder ball to be exposed to the opening groove. In the case where the main purpose is to remove N, the irradiated area of the irradiated laser light may be an upper surface of the solder ball not completely exposed.

In addition, the irradiation area of the laser light irradiated in the solder ball polishing step S330 may be limited to an upper surface of the solder ball exposed to the opening groove.

As such, the semiconductor packages exposed to the solder balls through the first laser processing S200 and the second laser processing S300, respectively, are package-on-package type through the semiconductor package bonding process S400. Can be completed with a semiconductor package.

The semiconductor package bonding process S400 may include a semiconductor package stacking step S410 and a solder ball bonding step 430. The solder ball bonding step 430 may be performed by a reflow process for bonding electrodes such as solder balls of a semiconductor package of a general package on package (PoP) type.

2 is a block diagram of a semiconductor package processing apparatus 1000 according to the present invention.

The semiconductor package processing apparatus 1000 according to the present invention refers to an apparatus for performing the semiconductor package processing method described with reference to FIG. 1.

The semiconductor package processing apparatus 1000 according to the present invention includes a first laser irradiator 1300 for irradiating a laser beam to form an opening groove through which a solder ball is exposed by removing a molding material of a semiconductor package, and the first laser irradiator ( Controlling the second laser irradiator 1400 and the first laser irradiator 1300 and the second laser irradiator 1400 for irradiating a laser beam into the opening groove with a wavelength different from that of the laser beam irradiated from 1300. It may include a control unit 1700 for.

The first laser irradiator 1300 and the second laser irradiator 1400 are controlled by the controller 1700, and control parameters include a control parameter, an irradiation time, an irradiation area, a focal length, and a processing form of a laser light. Can be.

The control parameter, irradiation time, irradiation area, focal length, and processing form of the laser beam of the laser beam among the control variables of the controller 1700 may be variables that vary according to the thickness of the molding material.

The controller 1700 includes a memory 1710 in which the thickness of the molding material determined by the thickness determiner 1900, which will be described later, is stored, and the first laser irradiator 1300 according to the thickness of the molding material stored in the memory 1710. And a processing apparatus 1720 for determining a control parameter, an irradiation time, an irradiation area, a focal length, a processing form, and the like, of the laser beam irradiated by the second laser irradiation unit 1400.

Therefore, the control parameter, irradiation time, irradiation area, focal length and processing form of the laser beam irradiated from the first laser irradiator 1300 and the second laser irradiator 1400 have a thickness provided in the semiconductor package processing apparatus according to the present invention. It may be determined according to the thickness measured or input by the determiner 1900, for example, the thickness measuring device 1910 or the thickness input device 1920.

In addition, as described above, the upper surface of the molding material, the inner surface of the opening groove or the upper surface of the solder ball in the step of laser processing the focus area of the laser beam irradiated from the first laser irradiation unit 1300 and the second laser irradiation unit 1400. And the like. Duplicate description with the semiconductor package processing method according to the present invention described with reference to FIG. 1 will be omitted.

In addition, the semiconductor package processing apparatus according to the present invention may further include a vision unit 1800 for confirming the opening groove forming process or the formation result of the molding material of the semiconductor package.

The photographing result by the vision unit 1800 may be used as data for determining whether there is a defect or the presence of foreign substances by the processing unit 1720 of the controller 1700.

That is, by comparing the photographed image of the solder ball included in the photographing result taken by the vision unit 1800 and the stored image stored in the memory 1710 to determine whether the solder ball is exposed, the surface state of the solder ball and the presence of foreign matter Each laser processing process can be adjusted or modified.

The photographing process by the vision unit 1800 may be performed after the end of each laser processing process or a detailed step of the semiconductor package processing method according to the present invention.

The image photographed by the vision unit 1800 may be compared with an image stored in the memory 1710 by a comparison algorithm previously stored in the processing apparatus, and used as a control variable of each laser irradiation unit.

In addition, the semiconductor package processing apparatus according to the present invention includes an onloading unit 1100 for onloading a semiconductor package to be processed, an offloading unit 1600 for offloading a processed semiconductor package, and a semiconductor package processing apparatus. A transfer unit 1600 for transferring the semiconductor package to be processed may be further provided.

The transfer unit 1600 may sequentially transfer the processing target semiconductor package to the first laser irradiator 1300, the second laser irradiator 1400, and a reflow processor described later.

In addition, the semiconductor package processing apparatus 1000 according to the present invention may further include a reflow processing unit 1500 for laminating substrates and bonding solder ball electrodes.

3 shows a cross-sectional view of a semiconductor package to be stacked which is the subject of a semiconductor package processing method according to the invention.

A package on package (PoP) type semiconductor package may be provided by stacking a plurality of semiconductor packages.

For convenience of description, a semiconductor package stacked on the upper portion is referred to as an upper semiconductor package 200, and a semiconductor package disposed below is referred to as a lower semiconductor package 100.

Each of the upper semiconductor package 200 and the lower semiconductor package 100 has solder balls (or bump electrodes 120a, 120b, 140a, 140b, 240a, and 240b) on the top and bottom surfaces of the substrates 110 and 210, respectively, and semiconductor chips. (Not shown) or a semiconductor circuit (not shown) may be provided.

The lower semiconductor package 100 is formed of a molding material 130 to protect and insulate the solder balls 120a and 120b or the semiconductor chip (not shown) or the semiconductor circuit (not shown) provided on the upper surface of the substrate 110. It may be in a packaged state.

Therefore, in order to laminate and bond the upper semiconductor package 200 to the upper surface of the lower semiconductor package 100, an opening groove must be formed in the molding material so that the solder balls on the upper surface of the lower semiconductor package 100 are exposed.

Referring to Figure 4 below the opening groove forming process will be described. 4 illustrates a first laser processing process (S200, see FIG. 1) of a semiconductor package processing apparatus and a semiconductor package processing method according to the present invention.

In order to remove the molding material of the lower semiconductor package 100, the semiconductor package according to the present invention may include a first laser irradiator 1300. In FIG. 4 or FIG. 5, a plurality of laser irradiation units is illustrated, but may be one laser irradiation unit.

As described above, the first laser irradiator 1300 may be a device for irradiating laser light in an infrared region.

The first laser irradiator 1300 irradiates a laser beam to form an opening groove in a predetermined region of the upper surface of the molding material.

The control parameter, irradiation time, irradiation area, focal length, and processing form of the irradiated laser light may be determined by the controller 1700 of the semiconductor package processing apparatus according to the present invention, and the controller 1700 may be a thickness determiner or a vision unit. The control parameter, irradiation time, irradiation area, focal length, processing form, etc. of the laser beam by the first laser irradiation unit 1300 may be determined according to the information provided in 1800.

As shown in FIG. 4A, the first laser irradiator 1300 decomposes the molding material by irradiating a laser beam on an upper surface of a molding material in which solder balls are provided on the upper surface of the lower semiconductor package 100. Remove Therefore, the openings 131a and 131b start to be formed in the region to which the laser light is irradiated.

The irradiation trajectory of the laser beam, which determines the processing form of the laser beam, etc., may have a spiral shape, and in this case, the opening groove formed in the molding material by the laser light starts to be removed from the circumference at a predetermined depth. Gradually, the center of the opening groove may be formed.

As shown in FIG. 4B, when the laser beam is irradiated for a predetermined time, the depth of the opening groove is deepened, and the shape of the opening grooves 131a and 131b may be completed.

FIG. 4C illustrates a state in which the first laser processing process S200 (see FIG. 1) is completed by the first laser irradiation unit 1300.

The semiconductor package processing apparatus according to the present invention may include a thickness determining part, but when there is a slight thickness variation of the molding material, the left solder ball 120a among the solder balls having the opening grooves 131a and 131b is formed on the upper surface of the solder ball. The residual molding material 132a may not be sufficiently removed. In addition, the molding material dregs 133a may remain on the inner side of the opening groove or the upper portion of the residual molding material. In this case, since the solder ball electrode is not completely exposed or foreign matter is interposed, even though the bonding process of the semiconductor package is performed, the electrical connection between the solder ball electrodes may not be sufficient or the electrical characteristics may be degraded.

In addition, in the case of the right solder ball (120b) of the solder ball formed with an opening groove, when the laser light is irradiated to the solder ball in a state in which the molding material is all removed by the thickness variation, the laser light may damage the upper surface of the solder ball (120b). have.

When the upper surface of the solder ball 120b is damaged, even when the bonding process between the solder balls is completed, voids may be formed therebetween, resulting in the same effect as the cross-sectional reduction of the electrode (for example, an increase in resistance).

Therefore, as shown in FIG. 4C, when the molding material or the residue thereof remains on or around the solder ball, or the solder ball electrode is damaged, the semiconductor package processing method according to the present invention provides a second laser according to the present invention. A machining process 300 (see FIG. 1).

FIG. 5 illustrates a second laser processing process S300 in the semiconductor package processing apparatus and the semiconductor package processing method according to the present invention.

Specifically, FIG. 5 (a) illustrates a second laser processing process S300 among semiconductor package processing processes according to the present invention, and FIG. 5 (b) illustrates a second laser processing process during semiconductor package processing processes according to the present invention. S300) shows a complete state.

As shown in FIG. 5 (a), the second laser machining process S300 may irradiate a laser light having a wavelength shorter than the laser light irradiated by the second laser irradiation unit 1400 in the first laser machining process S200. Can be.

Accordingly, as shown in FIG. 5B, the remaining molding material 132a remaining on the upper surface of the left solder ball 120a among the solder balls 120a and 120b in which the opening grooves are formed, and the upper or opening groove inner surface of the remaining molding material. Molding material residue 133a remaining in the can be finely pulverized and removed by a laser light having a short wavelength and a large peak power. As described above, fine molding or removal of foreign matters is possible by laser light having a relatively high peak power.

In addition, the rough surface of the right solder ball (120b) of the solder ball (120a, 120b) with the opening groove is similarly finely formed by the laser light with a short peak power is increased to finely change the unevenness of the surface, and consequently to reduce the surface roughness have.

As shown in FIG. 5B, when the second laser processing process S300 is completed, the remaining molding material remaining in the upper portion of the solder ball exposed to the left opening groove 131a or the molding material residue inside the opening groove, etc. Is removed and the upper surface of the solder ball exposed to the right opening groove 131b has a reduced surface roughness, thereby obtaining a smoother surface than before.

6 illustrates a process of bonding a semiconductor package by a semiconductor package processing apparatus and a semiconductor package processing method according to the present invention.

In detail, FIG. 6A illustrates a semiconductor package stacking step S410 (see FIG. 1) during a bonding process of a semiconductor package, and FIG. 6B illustrates a package on package in which a solder ball bonding step S430 (see FIG. 1) is completed. Type semiconductor package 300 is shown.

As shown in FIG. 6 (a), in the semiconductor package stacking step (S410), the solder balls 240a and 240b provided on the lower surface of the upper semiconductor package 200 may have the opening grooves 131a and the lower semiconductor package 100. At the same time, the solder balls 240a and 240b provided on the bottom surface of the upper semiconductor package 200 and the solder balls 120a and 120b exposed through the opening grooves of the lower semiconductor package 100 may be in close contact with each other. .

6 (b), through the solder ball bonding step 430, the solder balls 240a and 240b provided on the lower surface of the upper semiconductor package 200 and the opening grooves of the lower semiconductor package 100. The exposed solder balls 120a and 120b may be integrally bonded to each other.

Through the above-described second laser processing process (S300), foreign matters such as residual molding material or molding material dregs are removed, and the surface roughness of the solder balls 400a and 400b are bonded to each other at the joint portion (c). Reduced foreign matter or voids can improve electrical properties. In the bonding process, each of the bonded solder balls 400a and 400b may be insulated by a molding material provided between the opening grooves.

While the present invention has been particularly shown and described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims. . It is therefore to be understood that the modified embodiments are included in the technical scope of the present invention if they basically include elements of the claims of the present invention.

100: lower semiconductor package
200: upper semiconductor package
300: semiconductor package of the package-on-package type
1000: semiconductor package processing apparatus
1300: first laser irradiation unit
1400: second laser irradiation unit

Claims (21)

A first laser processing process including a plurality of solder balls, and irradiating and processing laser light to expose each solder ball of the semiconductor package packaged with a molding material; And
And a second laser processing process of irradiating and processing a laser light having a wavelength different from that of the laser light irradiated in the first laser processing process into the opening groove. The method of claim 1,
The first laser processing process comprises a step of forming an opening groove for irradiating a molding material on top of the solder ball of the semiconductor package with a laser beam to form opening grooves to expose each of the solder balls. Way. The method of claim 1,
The second laser machining process may include a foreign material removal step of removing a foreign substance remaining in the opening groove by irradiating a laser light having a wavelength different from that of the laser light of the first laser processing inside the opening groove. A semiconductor package processing method. The method of claim 3,
The foreign material is a semiconductor package processing method, characterized in that the remaining molding material remaining on the upper surface of the solder ball or molding material residues in the opening groove. The method of claim 1,
The second laser machining process includes a solder ball polishing step of polishing the solder ball surface by irradiating a surface of the solder ball exposed through the opening grooves with a laser light having a wavelength different from that of the laser light of the first laser machining process. A semiconductor package processing method. The method according to claim 3 or 5,
The wavelength of the laser light used in the second laser processing process is shorter than the wavelength of the laser light used in the first laser processing process. The method according to claim 6,
The laser package used in the first laser processing process is a semiconductor package processing method, characterized in that the laser light in the infrared range. The method according to claim 6,
The laser package used in the second laser processing process is a semiconductor package processing method, characterized in that the laser light in the ultraviolet range. The method of claim 1,
And a molding material thickness determining process for determining the thickness of the molding material. 10. The method of claim 9,
The molding material thickness determining process is performed by inputting the thickness of the molding material or measuring the thickness of the molding material. The method of claim 10,
At least one of a control parameter, an irradiation time, an irradiation area, a focal length, and a processing form of the laser beam irradiated during the first laser processing and the second laser processing are adjusted according to the thickness determined in the molding material thickness determining process. A semiconductor package processing method. The method of claim 1,
And a semiconductor package bonding process of laminating a semiconductor package on the semiconductor package on which the opening groove is formed after the second laser processing to bond both semiconductor packages. The method of claim 12,
The semiconductor package bonding process may include stacking an upper semiconductor package on a lower semiconductor package disposed below and depositing a solder ball provided on a lower surface of the upper semiconductor package in an opening groove provided on an upper surface of the lower semiconductor package; And an electrode bonding step of bonding the solder balls of the upper semiconductor package and the solder balls of the lower semiconductor package by a reflow process after the semiconductor package stacking step. A first laser irradiator for removing a molding material of the semiconductor package and irradiating a laser beam to form opening grooves through which solder balls are exposed;
A second laser irradiator for irradiating a laser beam having a wavelength different from that of the laser beam irradiated from the first laser irradiator into the opening groove; And
And a control unit for controlling the first laser irradiation unit and the second laser irradiation unit. 15. The method of claim 14,
The laser package irradiated from the first laser irradiation unit has a wavelength of the infrared region, the semiconductor package processing apparatus. 15. The method of claim 14,
The laser package irradiated from the second laser irradiation unit has a wavelength of the ultraviolet region, characterized in that the semiconductor package processing apparatus. 15. The method of claim 14,
Solder balls and openings of the lower semiconductor package provided on the bottom surface of the upper semiconductor package stacked on top of the semiconductor package having the opening grooves formed by the laser beam irradiated from the first laser irradiation part and the second laser irradiation part. The semiconductor package processing apparatus further comprises a reflow processing unit for bonding the exposed solder ball to the groove 15. The method of claim 14,
And a thickness determiner for determining a thickness of the molding material of the semiconductor package. 19. The method of claim 18,
The thickness determining unit comprises at least one of a thickness measuring device for measuring the thickness of the molding material and a thickness input device for inputting the thickness of the molding material. 15. The method of claim 14,
The controller is a control parameter of the laser beam irradiated to the opening groove side by the first laser irradiation section and the second laser irradiation section according to the memory in which the thickness of the molding material determined by the thickness determiner is stored and the molding material stored in the memory, And a processing device for determining at least one of irradiation time, irradiation area, focal length, and processing type. 15. The method of claim 14,
And a vision unit for photographing an upper surface of the molding material, wherein the controller compares a photographed image of each opening groove photographed by the vision unit with a stored image stored in a memory provided in the controller, and the first laser irradiation unit And determining at least one of a control parameter, an irradiation time, an irradiation area, a focal length, and a processing form of the laser beam irradiated to each opening groove side by the second laser irradiation unit.

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