KR20130083206A - Method of polishing the backsurface of wafer and wafer manufactured by the same - Google Patents

Method of polishing the backsurface of wafer and wafer manufactured by the same Download PDF

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Publication number
KR20130083206A
KR20130083206A KR1020120003857A KR20120003857A KR20130083206A KR 20130083206 A KR20130083206 A KR 20130083206A KR 1020120003857 A KR1020120003857 A KR 1020120003857A KR 20120003857 A KR20120003857 A KR 20120003857A KR 20130083206 A KR20130083206 A KR 20130083206A
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KR
South Korea
Prior art keywords
wafer
polishing
finishing
rough grinding
rough
Prior art date
Application number
KR1020120003857A
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Korean (ko)
Inventor
강병삼
Original Assignee
삼성전자주식회사
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Priority to KR1020120003857A priority Critical patent/KR20130083206A/en
Publication of KR20130083206A publication Critical patent/KR20130083206A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/0209—Cleaning of wafer backside
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Disclosed are a wafer backside polishing method and a wafer fabricated thereby. The disclosed wafer backside polishing method includes a wafer loading step of loading a wafer, a rough polishing step of sequentially performing a first rough polishing step and a second rough polishing step, a finishing polishing step of finishing a rough polishing wafer, and a first step A polishing step for polishing the finished polished wafer using a polishing head and a secondary polishing head, and a wafer unloading step for unloading the wafer, the first rough polishing step, the second rough polishing step, and the finishing polishing step And each of the polishing steps treats the wafer with the same number of copies per hour to prevent delays between the steps.

Description

Method of polishing the backsurface of wafer and wafer manufactured by the same

The present invention relates to a wafer backside polishing method and a wafer fabricated thereby, and more particularly, to a wafer backside polishing method for processing a wafer thinly by polishing the backside of the wafer and a wafer produced thereby.

In general, in the wafer manufacturing process for forming a semiconductor integrated circuit on the active surface of the wafer, the wafer used in the manufacturing process to suppress the damage of the wafer generated during the movement or handling between the wafer manufacturing apparatus is used in the package manufacturing process The thickness is thicker than that of the wafer.

Therefore, after the wafer fabrication process, the back surface of the unnecessary wafer is polished before being provided to the semiconductor package fabrication process. As such, the volume of the semiconductor chip can be reduced through the wafer backside polishing process, and good heat dissipation characteristics can be ensured when packaged and used.

The wafer backside polishing process goes through rough griding, fine griding, polishing and cleaning steps in order. Through this polishing process, desired roughness of the back surface of the wafer can be obtained.

However, the overall processing time of the polishing process may take too long to reduce productivity. As such, in order to reduce the processing time of the polishing process, the polishing time should be reduced by reducing the rough grinding time or the thickness of the polishing. In the related art, since only the roughing amount of rough grinding was performed to increase the backside polishing process, the roughing process time is longer than other process times, and thus, the overall wafer backside polishing process time is long, resulting in a decrease in the productivity of the wafer.

The present invention is to solve the above problems, by reducing the machining time of rough grinding and polishing to eliminate the bottleneck between the polishing process steps to reduce the polishing time per wafer wafer and this method It provides a wafer manufactured by.

Wafer back grinding method according to an aspect of the present invention,

A wafer loading step of loading a wafer;

A rough grinding step of sequentially performing the first rough grinding step and the second rough grinding step of the wafer;

A finishing polishing step of finishing polishing the rough-polished wafer;

Polishing the finished wafer using a first polishing head and a second polishing head; And

A wafer unloading step of unloading the wafer;

Each of the first rough polishing step, the second rough polishing step, the finishing polishing step, and the polishing step prevents the time delay between the steps by treating the wafer with the same number of sheets per hour.

The first rough grinding step and the second rough grinding step are made under the same conditions, and the maximum damage depth, the processing amount and the processing time are the same.

In the finishing polishing step, the maximum damage depth of the wafer after finishing polishing is 3㎛ ~ 15㎛.

In the finishing polishing step, the descending speed of the finishing polishing machine for polishing the wafer is 0.3 μm / s to 1 μm / s.

In the polishing step, the primary polishing head or the secondary polishing head selectively polishes the wafer after the finishing polishing step.

In the polishing step, the maximum damage depth of the wafer after polishing is 500 nm.

The cleaning step may further include cleaning the wafer after the polishing step.

A wafer produced by the wafer backside polishing method.

Wafer back grinding method according to the invention

First, by roughing twice, the rough grinding process time can be prevented.

Second, by using two polishing heads to perform the polishing step, the process can be prevented from stalling.

Third, by equalizing the number of wafers processed per hour in rough grinding, finishing polishing, and polishing, bottlenecks between processes can be prevented, thereby reducing the work time per wafer.

1 is a plan view schematically showing a wafer backside polishing apparatus for performing a wafer backside polishing method according to the present invention.
FIG. 2 is a diagram illustrating a configuration of a wafer backside polishing apparatus for performing the polishing step shown in FIG. 1.
Figure 3 is a process chart according to the wafer back polishing method according to the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the embodiments illustrated below are not intended to limit the scope of the invention, but rather to provide a thorough understanding of the invention to those skilled in the art. In the following drawings, like reference numerals refer to like elements, and the size of each element in the drawings may be exaggerated for clarity and convenience of explanation.

1 is a plan view schematically showing a wafer rear surface polishing apparatus for performing a wafer rear surface polishing method according to the present invention, and FIG. 2 is a view showing the configuration of a wafer rear surface polishing apparatus performing the polishing step shown in FIG. .

Referring to FIG. 1, a wafer backside polishing apparatus 100 performing a wafer backside polishing method according to the present invention is disposed at a turntable 110 rotatable in an arrow direction (clockwise) and at a predetermined interval on the turntable 110. At least four chuck tables for fixing the wafers, three abrasive grinding machines, one for each of the first rough grinding, the second rough grinding and the finishing grinding table, respectively, and the rough grinding and finishing polished wafers. It comprises a polishing machine for polishing.

The turntable 110 serves to move the chuck tables installed thereon to the corresponding polishing process position in the polishing process order.

The chuck table is a portion that suctions the wafers 141, 142, 143 and 144 mounted with the back side upward, and sucks the wafers 141, 142, 143 and 144 under vacuum until the wafer back grinding process (roughing and finishing) is completed.

The chuck table is provided adjacent to the standby table 121 and the standby table 121 at the standby position for fixing the wafer 141 supplied from the wafer supply cassette 101, and performs wafer roughing to perform primary rough grinding. It is installed adjacent to the primary roughing table 122 and the primary roughing polishing table 122 provided at the primary roughing polishing position to fix the 142, 2 fixing the wafer 143 for performing the second roughing polishing The finishing table 124 installed adjacent to the secondary roughing table 123 and the secondary roughing table 123 provided at the second rough polishing position and provided at the finishing polishing position for fixing the wafer 144 for performing the finishing polishing. It consists of. These chuck tables are arranged at intervals of 90 degrees, and the position is changed as the turntable 110 rotates with the turntable 110 as the turntable 110 rotates. It is a secondary rough polishing table, a secondary rough polishing table if it is in the secondary rough polishing position, and a finishing table if it is in the finishing polishing position.

Polishing machine is provided on the upper side of the first rough table 122, the first rough grinding machine 131 to perform the first rough grinding, the second rough grinding machine is provided on the upper side of the second rough table 123 to perform the second rough grinding 132 and the finishing polishing machine 133 provided on the finishing table 124 to perform the finishing polishing. The grinding machine is configured to be lowered while rotating.

The first rough grinding machine 131 and the second rough grinding machine 132 have the same configuration, and a spindle motor having a 46 탆 diamond wheel may be used. Diamond can be fixed using a metal bond. The descent rate of the first rough grinding machine 131 and the second rough grinding machine 132 is 5 μm / s for a 4 inch wafer and 3.5 μm / s for a 6 inch wafer.

Finishing grinding machine 133 may be a spindle motor is installed diamond wheel of the size of 15 ~ 25㎛. The diamond can be fixed using a vitrified bond. The descent speed of the finishing polishing machine 133 is 0.3 μm to 1 μm for both the 4-inch wafer and the 6-inch wafer.

The polishing machine is composed of a separate configuration adjacent to the turntable 110, by polishing the back surface of the wafer after the finishing polishing step is completed by the CMP method to reduce the warpage of the wafer and increase the strength. The polishing machine is a polishing plate 151 made of copper (Cu) and a primary polishing head 161 provided to fix the polished wafers 145 and 146 to each other and to move up and down on the polishing plate 151. And a secondary polishing head 162. In addition, the polishing machine further includes a slurry supply pipe 152 for supplying a powder diamond slurry to the polishing plate 151. The polished wafer is selectively fixed to the primary polishing head 161 or the secondary polishing head 162 to perform polishing. Thus, the polishing machine can polish two finished wafers at the same time.

Reference numeral 170 denotes a cleaner that cleans the polished wafer. Reference numeral 105 denotes a wafer storage cassette for storing the wafer having been cleaned. Wafer transporters 102, 103 and 104 for transferring wafers between the wafer supply cassette 101 and the waiting table 121, between the finishing table 124 and the polishing machine, and between the polishing machine and the wafer storage cassette 102, respectively. Is installed.

A method of polishing the back surface of the wafer using the wafer back surface polishing apparatus 100 as described above will be described with reference to FIGS. 1 and 3.

Figure 3 is a process chart according to the wafer backside polishing method according to the present invention.

1 and 3, the wafer 141 loaded on the wafer supply cassette 101 is mounted on the waiting table 121 using the wafer transfer machine 102 (step 210).

At this time, the wafer is aligned in order to orient the wafer 141 in order to put the wafer 141 on the standby table 121 (step 220). That is, when the wafer feeder 102 takes out one wafer 141 from the wafer supply cassette 101, the camera (not shown) checks the position of the wafer 141 and then places it on the standby table 121. Align the position of the wafer 141 to fit. The wafer 141 whose position is aligned is mounted on the waiting table 121 and fixed by vacuum suction.

Next, the rough grinding step is performed. The rough grinding step is performed twice, and the first rough grinding step 230 and the second rough grinding step 240 are performed under the same conditions.

In the first rough grinding step 230, the standby table 121 to which the wafer 141 is adsorbed by the clockwise rotation of the turntable 110 moves downward of the first rough grinding machine 131. Next, the first rough grinding machine 131 moves downward to rough the rear surface of the wafer 142.

Then, in the second rough grinding step (step 240), the first rough table 122 in which the first rough grinding finished wafer 142 is adsorbed by the clockwise rotation of the turntable 110 is a second rough grinding machine. (132) Move down. At this time, the secondary rough grinding machine 132 moves downward to rough the back surface of the wafer 143.

The maximum damage depth of the back side of the wafer, which has undergone the first rough grinding step (step 230) and the second rough grinding step (step 240), is 22 µm, the processing amount is 260 µm, and the processing time is the same. The number of treatments per hour (UPEH) is 22 to 30 sheets for 4 inch wafers and 14 to 15 sheets for 6 inch wafers.

According to the present invention, rough grinding is divided into two stages, so that the machining time is dispersed when polishing the same thickness as compared to when the wafer is polished in one step, thereby preventing the polishing process time from increasing. As a result, the number of sheets (UPEH) treated in each step of the first rough grinding step and the second rough grinding step is the same.

Next, the finishing step proceeds (250). After the second rough grinding step is completed, the secondary roughing table 123 on which the second rough grinding finished wafer 143 is adsorbed by the clockwise rotation of the turntable 110 moves to the lower side of the finishing polishing machine 133. . At this time, the finishing polishing machine 133 moves downward to finish the rear surface of the wafer 144.

After finishing the finishing step, the maximum damage depth (max damage depth) of the back surface of the wafer 143 is 3㎛ ~ 15㎛.

Next, the polishing step 260 is performed. When the finishing polishing step is completed, the wafer transfer machine 103 transfers the finished polishing wafer 144 to the lower side of the primary polishing head 161 or the secondary polishing head 162 and attaches the wafer. The wafers 145 and 146 attached to the primary polishing head 161 or the secondary polishing head 162 are moved downward and polished while contacting the polishing plate 151. After completing the polishing step, the maximum damage depth of the back surface of the wafer 144 is 500 nm.

The present invention includes two polishing heads, and the wafers are attached to the primary polishing head 161 or the secondary polishing head 162 and polished in the order of finishing polishing, thereby preventing the working time from being longer.

Thereafter, the wafer unloading step 270 is performed. After the polishing step is completed, the wafer feeder 104 receives the wafers 145 and 146 into the wafer storage cassette 105.

Meanwhile, although not shown in the drawing, a cleaning step may be performed between the polishing step and the wafer loading step. The cleaning step removes debris generated after the polishing step.

The above-described wafer back polishing method of the present invention and the wafer manufactured by the same have been described with reference to the embodiments shown in the drawings for clarity, but this is merely an example, and those skilled in the art may vary from this. It will be appreciated that variations and other equivalent embodiments are possible. Therefore, the true technical protection scope of the present invention will be defined by the appended claims.

100 --- wafer rear grinding machine 110 --- turntable
101 --- wafer supply cassette
102,103,104 --- wafer transport 105 --- wafer storage cassette
121 --- Standby table 122 --- 1st rough grinding table
123 --- 2nd rough grinding table 124 --- Finishing grinding table
131 --- 1st Rough Grinding Machine 132 --- 2nd Rough Grinding Machine
133 --- Finishing Machine
141,142,143,144,145,146 --- wafer
151 --- plate 152 --- slurry feed pipe
161--Primary Polishing Head 162--Primary Polishing Head

Claims (8)

A wafer loading step of loading a wafer;
A rough grinding step of sequentially performing the first rough grinding step and the second rough grinding step of the wafer;
A finishing polishing step of finishing polishing the rough-polished wafer;
Polishing the finished wafer using a first polishing head and a second polishing head; And
A wafer unloading step of unloading the wafer;
And each of the first rough grinding step, the second rough grinding step, the finish grinding step, and the polishing step are treated with the same number of sheets per hour to prevent a delay between the steps. The method of claim 1,
The first rough grinding step and the second rough grinding step are made under the same conditions, the maximum damage depth, processing amount and processing time is the same. The method of claim 1,
In the finishing polishing step,
The maximum damage depth of the wafer after finishing polishing is 3㎛ ~ 15㎛ Wafer back polishing method. The method of claim 1,
In the finishing polishing step,
A method of polishing the back surface of the wafer, wherein the descending speed of the finish polishing machine is 0.3 μm / s to 1 μm / s. The method of claim 1,
In the polishing step,
The first polishing head or the second polishing head selectively polishes the wafer after the finishing polishing step. 6. The method of claim 5,
In the polishing step,
The maximum damage depth of the wafer after polishing is 500nm wafer back polishing method. The method of claim 1,
And a cleaning step of cleaning the wafer after the polishing step. A wafer manufactured by the wafer backside polishing method according to any one of claims 1 to 7.
KR1020120003857A 2012-01-12 2012-01-12 Method of polishing the backsurface of wafer and wafer manufactured by the same KR20130083206A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020120003857A KR20130083206A (en) 2012-01-12 2012-01-12 Method of polishing the backsurface of wafer and wafer manufactured by the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120003857A KR20130083206A (en) 2012-01-12 2012-01-12 Method of polishing the backsurface of wafer and wafer manufactured by the same

Publications (1)

Publication Number Publication Date
KR20130083206A true KR20130083206A (en) 2013-07-22

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KR1020120003857A KR20130083206A (en) 2012-01-12 2012-01-12 Method of polishing the backsurface of wafer and wafer manufactured by the same

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