KR20130078894A - Method of bonding a die on a substrate and apparatus for bonding a die on a substrate - Google Patents

Abstract

PURPOSE: A method and an apparatus for bonding a die on a substrate are provided to perform a bonding process on a wafer having two kinds of dies in one place and to reduce the time for manufacturing a semiconductor device. CONSTITUTION: A die ejector (120) is arranged beneath a stage unit. A die picker (130) is arranged in the upper part of the stage unit. A temporary support unit (140) is adjacent to the stage unit. A transfer unit (151) is arranged at both sides of the stage unit. A bonding head unit bonds the die to a substrate.

Description

METHOD OF BONDING A DIE ON A SUBSTRATE AND APPARATUS FOR BONDING A DIE ON A SUBSTRATE}

The present invention relates to a die bonding method and a die bonding apparatus. More specifically, the present invention relates to a die bonding method and a die bonding apparatus for picking up a die from a wafer divided into a plurality of dies and bonding the die onto a substrate.

In general, semiconductor devices can be formed on a silicon wafer used as a semiconductor substrate by repeatedly performing a series of manufacturing processes, and the semiconductor devices formed as described above can be divided through a dicing process, Lt; / RTI >

A die bonding apparatus for performing the die bonding process is provided to pick up a die from a wafer divided into a plurality of dies and attach the die on a substrate. In this case, a bonding head may pick up the die, which is individualized from the attach film, and attach the die to the substrate by thermocompression bonding. In addition, a bonding stage may be provided to support the substrate while a bonding process of attaching the die to the substrate is performed. In this case, a heating wire may be provided inside the bonding stage to provide heat required for the bonding process.

While the bonding head performs the bonding process in a thermocompression bonding manner, heat transfer may occur in the bonding head. Therefore, when the heated bonding head picks up the die from the wafer, heat transfer may occur in the attach film, thereby causing a problem that the stage unit supporting the wafer is contaminated. In addition, when the heated bonding head picks up the die, heat transfer may occur in the die, and thus the die may be thermally shocked. Therefore, a two step bonding process may be required to suppress contamination of the stage unit and thermal shock of the die.

Meanwhile, the bonding head may pick up a die, which is individualized from an attach film, to directly attach the die to a substrate, which may require a direct bonding process.

It is an object of the present invention to provide a die bonding method capable of selectively performing two different bonding methods in order to solve the above problems.

It is an object of the present invention to provide a die bonding apparatus capable of selectively performing two different bonding methods in order to solve the above problems.

In the die bonding method according to the embodiments of the present invention, after determining the bonding process of the die to the substrate, either a direct bonding process or a two-stage bonding method, the die is separated from the attach film, and the separated die Pick up. The picked die is bonded to a substrate according to the determined bonding process. Here, the direct bonding process is defined as directly bonding the picked die to the substrate, and the two-stage bonding process seats the picked die on a die stage, picks up the die from the die stage, and It is defined as bonding to.

In one embodiment of the invention, the position of the picked-up die can be further measured.

In one embodiment of the present invention, in order to bond the die, at least two bonding heads are used to pick up different types of dies, and then the picked dies are respectively bonded to the substrate at different bonding stages. can do.

A die bonding apparatus according to embodiments of the present invention includes a stage unit supporting an attach tape to which a wafer having a plurality of dies is attached, and disposed below the stage unit, to separate the die from the attach tape. A die ejector provided to elevate in a vertical direction, a die picker disposed on an upper portion of the stage unit, to pick up the die separated from the attach tape, and disposed adjacent to the stage unit; A temporary support unit received from a picker, disposed on both sides of the stage unit, the transfer unit supporting the substrate and providing a bonding area, and picking up the die from either the attach tape and the die stage And a bonding head unit bonding to the substrate.

The die bonding apparatus according to an embodiment of the present invention may further include a position measuring unit disposed on the stage unit and measuring the position of the picked-up die. Here, the position measuring unit is disposed on the die movement path between the die picker and the die ejector, the picked up die using a spectroscope for adjusting an optical path toward the picked up die and the light through the spectroscope It may include an imager for imaging. Here, the spectrometer may be provided to be movable so as not to interfere with the movement of the die.

Here, the transfer unit may be arranged in parallel with each other, and may include first and second transfer rail for transferring the substrate, respectively.

In one embodiment of the present invention, the temporary support unit is disposed adjacent to the stage unit, and includes a first die stage and a second die stage for temporarily supporting the picked up die, respectively, and the transfer unit And a first bonding stage and a second bonding stage arranged parallel to each other and provided to support the substrate, respectively, wherein the bonding head unit picks up the die from the first and second die stages, respectively. The first and second bonding stages may include a first bonding head and a second bonding head respectively bonded to the substrate. The first and second bonding heads may be provided to move between the first and second die stages and the first and second bonding stages, respectively.

The die bonding method and the die bonding apparatus according to the embodiments of the present invention as described above may selectively perform a direct bonding process or a two-stage bonding process. Therefore, a two-stage bonding process may be performed in the case of a die that is sensitive to thermal shock and a defect may occur, and a direct bonding process may be performed in the case of a die that is not sensitive to thermal shock. Furthermore, different first and second substrates may be supplied respectively and different dies may be bonded to the first and second substrates, respectively. That is, since the die bonding process for the wafer having two dies can be performed by one die bonding apparatus, the manufacturing time and cost of the semiconductor devices can be greatly reduced.

1 is a flowchart illustrating a die bonding method according to an embodiment of the present invention.
2 is a plan view illustrating a die bonding apparatus according to an embodiment of the present invention.
3 is a cross-sectional view for describing the stage unit illustrated in FIG. 1.
4A through 4D are cross-sectional views illustrating a two-step bonding process using the die bonding apparatus illustrated in FIG. 1.
FIG. 5 is a cross-sectional view for describing a direct bonding process using the die bonding apparatus illustrated in FIG. 1.
6 is a plan view illustrating a die bonding apparatus according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The invention will be described in more detail below with reference to the accompanying drawings showing embodiments of the invention. However, the present invention should not be construed as limited to the embodiments described below, but may be embodied in various other forms. The following examples are provided so that those skilled in the art can fully understand the scope of the present invention, rather than being provided so as to enable the present invention to be fully completed.

When an element is described as being placed on or connected to another element or layer, the element may be directly disposed or connected to the other element, and other elements or layers may be placed therebetween It is possible. Alternatively, if one element is described as being placed directly on or connected to another element, there can be no other element between them. The terms first, second, third, etc. may be used to describe various items such as various elements, compositions, regions, layers and / or portions, but the items are not limited by these terms .

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Furthermore, all terms including technical and scientific terms have the same meaning as will be understood by those skilled in the art having ordinary skill in the art, unless otherwise specified. These terms, such as those defined in conventional dictionaries, shall be construed to have meanings consistent with their meanings in the context of the related art and the description of the present invention, and are to be interpreted as being ideally or externally grossly intuitive It will not be interpreted.

Embodiments of the present invention are described with reference to cross-sectional illustrations that are schematic illustrations of ideal embodiments of the present invention. Accordingly, changes from the shapes of the illustrations, such as changes in manufacturing methods and / or tolerances, are those that can be expected. Accordingly, the embodiments of the present invention are not to be construed as being limited to the specific shapes of the areas described by way of illustration, but rather to include deviations in the shapes, the areas described in the drawings being entirely schematic and their shapes Are not intended to illustrate the exact shape of the regions and are not intended to limit the scope of the invention.

1 is a flowchart illustrating a die bonding method according to an embodiment of the present invention.

In the bonding process of bonding the die to the substrate, one of the bonding processes of the direct bonding process or the two-stage bonding method is selected (S110). The direct bonding process is defined as directly bonding the picked up die to the substrate. In addition, the two-stage bonding process is defined as seating the picked die on a die stage, picking up the die from the die stage, and bonding the die to the substrate.

That is, in the direct bonding step, the separated head may pick up the separated die and bond the die directly to the substrate. Alternatively, in the two-step bonding process, the die stage is picked up by a die picker rather than a bonding head and the die stage temporarily supports the picked up die. The bonding head may pick up a die supported by the die stage, and the bonding head may bond the die to the substrate.

For example, the two-stage bonding process may be selected when thermal shock of a die may occur due to heat required in a subsequent bonding process or a process failure may occur due to contamination of a stage unit. Alternatively, when a thermal shock is not a problem on the stage unit or the die, a direct bonding process of directly picking up the die from which the bonding head is separated and bonding the die directly to the substrate may be selected.

Subsequently, the die is separated from the wafer mounted on the attach film (S120). This can be defined as a die separation process. A diced wafer may be attached to the attach film. The wafer may be in a state where the die on which the circuit element is formed is individualized. The wafer including the attach film may be supported by the stage unit.

In the die separating process, the die attached to the attach film may be separated by using an ejector pin which is disposed below the stage unit and moves up and down. That is, the individualized die may be separated from the attach film by raising the ejector pin to raise the die attached to the attach film.

Subsequently, the separated die is picked up (S130). The die separated through the die separation process rises relatively. In a subsequent process the separated die may be picked up by vacuum adsorption. For example, the separated die may be directly picked up by a bonding head. Alternatively, the separated die may be picked up by a separately provided die picker.

Subsequently, bonding fixing to bond the die picked up by the bonding head to the substrate according to the determined bonding process may be performed (S150). That is, the bonding head absorbs the picked up die and moves toward the die supported by the bonding stage. Thereafter, the die may be attached to the substrate by thermocompression bonding in a state in which the bonding head adsorbs the die.

In one embodiment of the present invention, the process of detecting the position of the picked-up die may be additionally performed (S140). This may be referred to as a position detection process. The position detection process may identify the position of the die under the picked up die using a camera and a spectrometer. This allows subsequent bonding processes to be performed more accurately.

In one embodiment of the present invention, in the bonding process, at least two bonding heads are used to pick up different types of dies. Subsequently, the picked-up dies may be bonded to the substrates at different bonding stages, respectively. Accordingly, as different types of dies are bonded to different substrates at respective bonding stages, different types of dies may be simultaneously or sequentially bonded in one space.

2 is a plan view illustrating a die bonding apparatus according to an embodiment of the present invention. 3 is a cross-sectional view for describing the stage unit illustrated in FIG. 2.

2 and 3, a die bonding apparatus 100 according to an embodiment of the present invention may be used to perform a die bonding process on a wafer 10 divided into a plurality of dies 12 and 14. Can be. In particular, the wafer 10 including two dies 12 and 14 may be used to perform a die bonding process using the first substrate 30 and the second substrate 40. The wafer may include first dies 12 and second dies 14. In addition, the first dies 12 and the second dies 14 may be classified according to quality.

The die bonding apparatus 100 includes a stage unit 110, a die ejector 120, a die picker 130, at least one temporary support unit 140, at least one transfer unit and at least one bonding head unit. do.

The stage unit 110 supports an attach tape to which the wafer 10 divided into the plurality of dies 12 and 14 is attached, and a wafer ring to which the attach tape is attached (not shown).

The stage unit 110 includes a clamp 112 for holding the wafer ring, a support ring 114 for supporting the attach tape, and a base member on which the clamp 112 and the support ring 114 are mounted. 116 may include.

In addition, although not shown, the stage unit 110 may be moved by a stage driving mechanism (not shown) such as a Cartesian robot. In particular, the stage unit 110 may be positioned by the stage driving mechanism for the load and unload operation of the wafer 10 and the selection of the dies 12 and 14.

The die ejector 120 may be disposed in the central hole of the stage unit 110 to selectively separate the dies 12 and 14 from the attach tape. In addition, the die ejector 120 is disposed under the wafer 10 supported by the stage unit 110.

The die ejector 120 is configured to be movable in the vertical direction to selectively separate the dies 12, 14 from the attach tape. The die ejector 120 rises to separate the die from the wafer.

The die picker 130 is disposed above the stage unit 110. The die picker 130 picks up at least one of the dies.

For example, the die picker 130 picks up at least one of the dies 12, 14 using a vacuum. The die picker 130 may move in the vertical direction. The die picker 130 then seats the picked up die 12 on a temporary support unit 140.

The temporary support unit 140 is disposed above the stage unit 110. The temporary support unit 140 also includes a die stage to support the die picked up to the die picker 130.

In addition, the temporary support unit 140 may move in the X direction. That is, when the die picker 130 moves up and down to pick up the separated die, the temporary support unit 140 may move in the X direction to avoid the movement of the die picker 130. Subsequently, when the die picker 130 finishes picking up the separated die 12 to the top of the stage unit 110, the temporary support unit 140 moves in the X direction so that the picked-up die ( 12) can be located down. When the die picker 130 releases the vacuum, the temporary support unit 140 located below the picked up die 12 may temporarily support the picked up die 12.

The die bonding apparatus 100 according to the embodiment of the present invention further includes a position measuring unit 170 for measuring the position of the picked-up die while the die picker 130 picks up the separated die 12. can do. Therefore, as the position measuring unit 170 secures position data of the picked-up die, the bonding head unit may more accurately bond the die to the substrate.

For example, the position measuring unit 170 may include a spectrometer 171 and an imager 173.

The spectrometer 171 is disposed on the die movement path between the die picker 130 and the die ejector 120. In addition, the spectrometer 171 may be provided to be movable so as not to interfere with the movement path of the die. For example, the spectroscope 171 may be provided to move in the Y direction, thereby preventing the spectroscope 171 from colliding during the movement of the die while the die picker 130 adsorbs and lifts the separated die. have.

The spectrometer 171 may adjust the optical path towards the picked up die 12. For example, when the imager 173 picks up the picked up die 12, the spectrometer 171 allows light to be directed toward the picked up die 12. The spectrometer 171 may include, for example, a prism.

The imager 173 is disposed inside the stage unit 110. The imager 173 may acquire the position image of the picked-up die 12 by capturing the picked-up die 12 using light through the spectrometer 171. The position measuring unit 170 may secure position data of the picked-up die 12 using the position image.

The transfer unit is disposed adjacent to the stage unit 110. The transfer unit transfers the substrate. The transfer unit provides a bonding area. That is, the transfer unit is provided to transfer the substrate in the Y direction to provide the substrate in the bonding region and to transfer the substrate and the bonded die after the bonding process is completed in the bonding region.

The transfer unit may include a first transfer unit 151 and a second transfer unit 156. The first and second transfer units 151 and 156 may extend side by side in the horizontal direction and may have die bonding regions A and B, respectively.

Each of the first and second transfer units 151 and 156 may be used to transfer the first substrate 30 and the second substrate 40. In addition, each of the first and second transfer units 151 and 156 may provide bonding stages that provide the bonding regions A and B for bonding the first substrate 30 and the second substrate 40. It may include. The bonding stages may perform a die bonding process in the bonding regions A and B while supporting the first substrate 30 and the second substrate 40. In particular, at least one of the first dies 12 may be attached to the first substrate 30, and at least one of the second dies 14 may be mounted on the second substrate 40 .

As illustrated, the first and second transfer units 151 and 156 may include rails 153 and 158 and grippers 152 for transferring the first and second substrates 30 and 40, respectively. 157).

The rails 153 and 158 may extend in a horizontal direction parallel to each other. The rails 153 and 158 may define a transfer path for transferring the substrates.

The grippers 152 and 157 may be installed on the rails 153 and 158, respectively. The grippers 152 and 157 may grip the substrates 30 and 40 positioned on the rails to move the substrates 30 and 40 along the rails 153 and 158.

The bonding head unit picks up a die and bonds it to the substrate. The bonding head unit is provided to pick up the die from any one of the attach tape and the temporary support unit 140.

The bonding head unit may include a first bonding head unit 161 and a second bonding head unit 166.

For example, the first and second bonding head units 161 and 166 directly pick up the separated die through the ejector pin 120 so that the first and second bonding head units 161 and 166 may be attached to the substrates 30 and 40 in the bonding regions A and B. Separate dies may be bonded respectively. In this way, a direct bonding process may be performed. Alternatively, the first and second bonding head units 161 and 166 pick up the dies 30 and 40 seated in the temporary support unit 140 to separate the substrates from the bonding regions A and B. The die may be bonded. In this way, a two-step bonding process may be performed.

4A through 4D are cross-sectional views illustrating a two-step bonding process using the die bonding apparatus illustrated in FIG. 1.

Referring to FIG. 4A, a wafer attached to an attach film is mounted on the stage unit 110. A diced wafer may be attached to the attach film. In the wafer, the die 12 in which the circuit elements are formed may exist in an individualized state.

The ejector pins 120 may then be raised to detach the die 12 attached to the attach film. That is, the individualized die may be separated from the attach film by raising the die 12 attached to the attach film by raising the ejector pin 120.

The die picker 130 then picks up the separated die 12. The die picker 130 may pick up the separated die by vacuum adsorption.

Referring to FIG. 4B, the spectrometer 171 moves while the die picker 130 picks up the die 12 and is disposed below the picked-up die 12. The imager 173 (see FIG. 3) then picks up the picked up die 12 using light through the spectrometer 171. Thus, an image of the picked-up die 12 is obtained. Thus, information about the picked-up die 12 can be obtained.

The temporary support unit 140 then moves to the bottom of the picked up die 12. The die picker 130 supports the picked up die 12. For example, the temporary picker unit 140 supports the picked up die 12 by releasing the vacuum on the picked up die 12.

Meanwhile, the transfer units 151 and 153 move the substrates 30 and 40 along the rails. As a result, the substrates 30 and 40 may be disposed in the bonding region. For example, a gripper included in a transfer unit moves the substrates 30 and 40 along the rails to seat the substrates 30 and 40 in the bonding region. The transfer units 151 and 153 may be arranged in parallel with each other about the stage unit 110. Thus, the transfer units 151 and 153 may have two bonding areas.

Referring to FIG. 4C, one of the bonding head units 161 and 166 161 moves toward the temporary support unit 140. Thereafter, the bonding head unit 161 picks up the substrate 30 from the temporary support unit 140 and transfers the die to the bonding region.

In one embodiment of the present invention, two bonding head units 161 and 166 may be disposed to face each other with respect to the stage unit 110. Therefore, each of the bonding head units 161 and 166 may transfer the die to the two bonding regions, respectively, to bond the two types of die separately.

Referring to FIG. 4D, one of the bonding head units 161 and 166 may attach the die to the substrate 30 by thermocompression in a state in which the die is attracted. On the other hand, after the die picker 130 picks up another die and seats the temporary support unit 140, one of the bonding head units 161 and 166 166 receives the die while the die is sucked. May be attached to the substrate 40 by a thermocompression bonding method.

In the two-step bonding process of the present invention, the bonding head units 161 and 166 do not directly contact the die 12 of the wafer mounted on the stage unit 110. Therefore, thermal shock of the die may be caused by the heat retained by the bonding head units 161 and 166 or process defects may be suppressed due to contamination of the stage unit.

FIG. 5 is a cross-sectional view for describing a direct bonding process using the die bonding apparatus illustrated in FIG. 1.

Referring to FIG. 5, the wafer 10 attached to the attach film is mounted on the stage unit 110. The attached wafer 10 may be attached to the attach film. The dies 12 and 14 in which the circuit elements are formed may be present in the wafer in an individualized state.

The ejector pins 120 may then be raised to detach the die 12 attached to the attach film. That is, the individualized die 12 may be separated from the attach film by raising the die 12 attached to the attach film by raising the ejector pin 120.

Thereafter, bonding head units 161 and 166 pick up the separated die. In this case, the die picker (not shown) may retreat to maintain an idle state.

Meanwhile, the transfer units 151 and 153 move the substrates 30 and 40 along the rails. As a result, the substrates 30 and 40 may be disposed in the bonding region. For example, a gripper included in the transfer units 151 and 153 moves the substrates 30 and 40 along the rails to seat the substrates 30 and 40 in the bonding region.

The bonding head units 161 and 166 transfer the picked up die to the bonding area. Thereafter, the bonding head units 161 and 166 thermally compress the die 12 with respect to the substrates 30 and 40 to bond the die 12 to the substrate.

When performing a direct bonding process using the die bonding apparatus of the present invention, the bonding head units 161 and 166 may directly pick up dies of a wafer mounted on a stage unit and bond the dies to a substrate in the bonding region. have.

6 is a plan view illustrating a die bonding apparatus according to an embodiment of the present invention.

Referring to FIG. 6, in the die bonding apparatus according to the embodiment of the present invention, the die bonding apparatus 200 may include a stage unit 210, a die ejector 220, a die picker 230, a plurality of temporary support units, A plurality of transfer units 251, 253 and a plurality of bonding head units 261, 266.

Since the stage unit 210 and the die ejector 220 are substantially the same as the stage unit and the die ejector described with reference to FIGS. 2 and 3, a detailed description thereof will be omitted.

The die picker is disposed above the stage unit 210. The die picker is provided to elevate to pick up the separate die. The die picker may also move in the X direction. For example, the die picker may include an LM guide and an adsorption unit mounted to the LM guide. Therefore, the adsorption part may move in the X direction along the LM guide.

The temporary support units may include a first temporary support unit and a second temporary support unit to face each other about the stage unit 210. Accordingly, the first and second temporary supporting units 241 and 246 may support two types of die picked up by the die picker, respectively.

The temporary support units are disposed adjacent to the stage unit 210. The temporary support units may include a first die stage 241 and a second die stage 246 that each temporarily support the picked up die. The temporary support units may be fixedly provided.

The transfer units 251, 253 are arranged adjacent to the stage unit. The transfer units 251 and 253 may extend in parallel to each other. The transfer units 251 and 253 transfer different kinds of substrates. The transfer units 251 and 253 may include first and second rails that define a substrate transfer path and first and second bonding stages that provide bonding regions, respectively.

The bonding head units 261 and 266 pick up the die 12 and bond it to the substrate 40. The bonding head units are capable of picking up the die 12 from any of the first and second die stages 241, 246 included in the attach tape and temporary support unit. Are respectively provided.

The bonding head units 261 and 266 may include a first bonding head unit 261 and a second bonding head unit 266. In addition, the bonding heads 262 and 267 included in the first and second bonding head units 261 and 266 may move between the first and second die stages and the first and second bonding stages, respectively. It may be provided to be.

Although described above with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and modified within the scope of the present invention without departing from the spirit and scope of the present invention described in the claims below. It will be appreciated that it can be changed.

10: wafers 12, 14: first and second die
30,40: first and second substrates 100, 200: die bonding apparatus
110, 210: stage unit 120: die ejector
130, 230: die picker 140, 241, 246: temporary support unit
151, 156, 251, 256: transfer unit 161, 166, 261, 266: bonding head
170: position measuring unit

Claims (10)

Determining a bonding process of any one of a direct bonding process or a two-stage bonding method to the die;
Separating the die from the attach film;
Picking up the separated die; And
Bonding the picked up die to a substrate in accordance with the determined bonding process;
The direct bonding process is defined as bonding the picked die directly to the substrate, wherein the two-step bonding process seats the picked die on a temporary support unit, picks up the die from the temporary support unit to A die bonding method, characterized in that it is defined as bonding to. 2. The method of claim 1, further comprising measuring the position of the picked up die. The method of claim 1, wherein bonding the die comprises:
Picking up different types of dies using at least two bonding heads, respectively; And
Seating the picked up dies on different temporary support units respectively;
Bonding each of the dies picked up from the temporary support units to a substrate, respectively. A stage unit supporting an attach tape to which a wafer having a plurality of dies is attached;
A die ejector disposed below the stage unit, the die ejector being provided to lift in a vertical direction to separate the die from the attach tape;
A die picker disposed above the stage unit and picking up the die separated from the attach tape;
A temporary support unit disposed adjacent to the stage unit and receiving the picked up die from the die picker;
A transfer unit disposed at both sides of the stage unit, the transfer unit supporting a substrate and providing a bonding area; And
And a bonding head unit that picks up the die from the attach tape and from any one of the temporary support units and bonds it to the substrate. 5. The die bonding apparatus of claim 4, further comprising a position measuring unit disposed adjacent to the stage unit and measuring a position of the picked-up die. The method of claim 5, wherein the position measuring unit,
A spectroscope disposed on the die movement path between the die picker and the die ejector, the spectroscope adjusting an optical path towards the picked up die; And
And an imager for picking up the picked-up die using light through the spectrometer. The die bonding apparatus of claim 6, wherein the spectrometer is provided to be movable so as not to interfere with the movement of the die. 6. The die bonding apparatus of claim 5, wherein the transfer units are arranged in parallel with each other and include first and second transfer rails for transferring the substrate, respectively. 6. The method of claim 5, wherein the temporary support unit is disposed adjacent to the stage unit, the temporary support unit includes a first die stage and a second die stage, respectively for temporarily supporting the picked up die,
The transfer unit is arranged in parallel to each other, and includes a first bonding stage and a second bonding stage provided to support the substrate, respectively,
The bonding head unit includes a first bonding head and a second bonding head that pick up the dies from the first and second die stages, respectively, and bond them to the substrate at the first and second bonding stages, respectively. A die bonding apparatus characterized by the above-mentioned. 10. The die bonding apparatus of claim 9, wherein the first and second bonding heads are provided to move between the first and second die stages and the first and second bonding stages, respectively.

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