KR20130071095A - Manufacturing method of an array substrate for liquid crystal display - Google Patents
Manufacturing method of an array substrate for liquid crystal display Download PDFInfo
- Publication number
- KR20130071095A KR20130071095A KR1020110138423A KR20110138423A KR20130071095A KR 20130071095 A KR20130071095 A KR 20130071095A KR 1020110138423 A KR1020110138423 A KR 1020110138423A KR 20110138423 A KR20110138423 A KR 20110138423A KR 20130071095 A KR20130071095 A KR 20130071095A
- Authority
- KR
- South Korea
- Prior art keywords
- copper
- metal film
- acid
- based metal
- film
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 24
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 32
- -1 azole compound Chemical class 0.000 claims abstract description 21
- 150000001875 compounds Chemical class 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000007800 oxidant agent Substances 0.000 claims abstract description 8
- 239000010949 copper Substances 0.000 claims description 72
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 71
- 229910052802 copper Inorganic materials 0.000 claims description 69
- 229910052751 metal Inorganic materials 0.000 claims description 62
- 239000002184 metal Substances 0.000 claims description 62
- 238000005530 etching Methods 0.000 claims description 50
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 13
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 12
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 12
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 11
- 239000011733 molybdenum Substances 0.000 claims description 11
- 125000000217 alkyl group Chemical group 0.000 claims description 10
- 125000002947 alkylene group Chemical group 0.000 claims description 10
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 9
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 150000003839 salts Chemical class 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 239000002202 Polyethylene glycol Substances 0.000 claims description 6
- 239000002738 chelating agent Substances 0.000 claims description 6
- 150000003007 phosphonic acid derivatives Chemical class 0.000 claims description 6
- 229920001223 polyethylene glycol Polymers 0.000 claims description 6
- 150000005846 sugar alcohols Polymers 0.000 claims description 6
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 5
- 125000003118 aryl group Chemical group 0.000 claims description 5
- 125000000732 arylene group Chemical group 0.000 claims description 5
- 229940042400 direct acting antivirals phosphonic acid derivative Drugs 0.000 claims description 5
- 125000000524 functional group Chemical group 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 5
- 229920001451 polypropylene glycol Polymers 0.000 claims description 5
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical group CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 claims description 5
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 4
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 claims description 4
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 4
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims description 4
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 4
- FSYKKLYZXJSNPZ-UHFFFAOYSA-N sarcosine Chemical compound C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 claims description 4
- BFXAWOHHDUIALU-UHFFFAOYSA-M sodium;hydron;difluoride Chemical compound F.[F-].[Na+] BFXAWOHHDUIALU-UHFFFAOYSA-M 0.000 claims description 4
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 claims description 4
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims description 4
- VBKNTGMWIPUCRF-UHFFFAOYSA-M potassium;fluoride;hydrofluoride Chemical compound F.[F-].[K+] VBKNTGMWIPUCRF-UHFFFAOYSA-M 0.000 claims description 3
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 2
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical class OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 2
- 229910017855 NH 4 F Inorganic materials 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 108010077895 Sarcosine Proteins 0.000 claims description 2
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 2
- 150000001242 acetic acid derivatives Chemical class 0.000 claims description 2
- 150000007513 acids Chemical class 0.000 claims description 2
- 125000003295 alanine group Chemical class N[C@@H](C)C(=O)* 0.000 claims description 2
- QWCKQJZIFLGMSD-UHFFFAOYSA-N alpha-aminobutyric acid Chemical class CCC(N)C(O)=O QWCKQJZIFLGMSD-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- WWIWLTSSHDKOKO-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1.OS(=O)(=O)C1=CC=CC=C1 WWIWLTSSHDKOKO-UHFFFAOYSA-N 0.000 claims description 2
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 2
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 2
- 150000002332 glycine derivatives Chemical class 0.000 claims description 2
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical class OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 2
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 claims description 2
- 229910000358 iron sulfate Inorganic materials 0.000 claims description 2
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 claims description 2
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical class OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 2
- 150000002978 peroxides Chemical class 0.000 claims description 2
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 2
- 159000000001 potassium salts Chemical class 0.000 claims description 2
- 229940043230 sarcosine Drugs 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims description 2
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 claims description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N methanesulfonic acid Substances CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims 3
- 229940098779 methanesulfonic acid Drugs 0.000 claims 2
- XQRLCLUYWUNEEH-UHFFFAOYSA-N diphosphonic acid Chemical class OP(=O)OP(O)=O XQRLCLUYWUNEEH-UHFFFAOYSA-N 0.000 claims 1
- 239000011698 potassium fluoride Substances 0.000 claims 1
- 235000003270 potassium fluoride Nutrition 0.000 claims 1
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 abstract description 8
- 230000001590 oxidative effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 70
- 239000011651 chromium Substances 0.000 description 5
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 4
- 229910001431 copper ion Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 159000000021 acetate salts Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 230000009920 chelation Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- GXHMMDRXHUIUMN-UHFFFAOYSA-N methanesulfonic acid Chemical compound CS(O)(=O)=O.CS(O)(=O)=O GXHMMDRXHUIUMN-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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Abstract
Description
본 발명은 액정표시장치용 어레이 기판의 제조방법; 구리계 금속막의 식각액 조성물; 및 상기 식각액 조성물을 사용하는 구리계 금속막의 식각방법에 관한 것이다.
The present invention provides a method of manufacturing an array substrate for a liquid crystal display device; Etching liquid composition of the copper-based metal film; And it relates to an etching method of the copper-based metal film using the etchant composition.
액정표시장치에서 기판 위에 금속 배선을 형성하는 과정은 통상적으로 스퍼터링 등에 의한 금속막 형성공정, 포토레지스트 도포, 노광 및 현상에 의한 선택적인 영역에서의 포토레지스트 형성공정, 및 식각공정에 의한 단계로 구성되고, 개별적인 단위 공정 전후의 세정 공정 등을 포함한다. 이러한 식각공정은 포토레지스트를 마스크로 하여 선택적인 영역에 금속막을 남기는 공정을 의미하며, 통상적으로 플라즈마 등을 이용한 건식식각 또는 식각액 조성물을 이용하는 습식식각이 사용된다.The process of forming a metal wiring on a substrate in a liquid crystal display device is usually composed of a metal film forming process by sputtering or the like, a photoresist coating process, a photoresist forming process in an optional region by exposure and development, and a step by an etching process And a cleaning process before and after the individual unit process. This etching process refers to a process of leaving a metal film in a selective region using a photoresist as a mask. Typically, dry etching using plasma or wet etching using an etching composition is used.
이러한 반도체 장치에서, 최근 금속배선의 저항이 주요한 관심사로 떠오르고 있다. 왜냐하면 TFT-LCD(thin film transistor-liquid crystal display)에 있어서 RC 신호지연 문제를 해결하는 것이 패널크기 증가와 고해상도 실현에 관건이 되는데, 저항이 RC 신호지연을 유발하는 주요한 인자이기 때문이다. 따라서, TFT-LCD의 대형화에 필수적으로 요구되는 RC 신호지연의 감소를 실현하기 위해서는, 저저항의 물질을 개발하는 것이 필수적이다. In such a semiconductor device, resistance of metal wiring has recently become a major concern. This is because resolving the RC signal delay problem in TFT-LCD (thin film transistor-liquid crystal display) is a key factor in increasing the panel size and achieving a high resolution, because the resistance is a major factor causing the RC signal delay. Therefore, it is essential to develop a low-resistance material in order to realize reduction of the RC signal delay, which is indispensably required for enlarging the TFT-LCD.
종래에 주로 사용되었던 크롬(Cr, 비저항: 12.7 ×10-8Ωm), 몰리브덴(Mo, 비저항: 5×10-8Ωm), 알루미늄(Al, 비저항: 2.65 ×10-8Ωm) 및 이들의 합금은 저항이 크기 때문에 대형 TFT LCD에 사용되는 게이트 및 데이터 배선 등으로 이용하기 어렵다. 따라서, 저저항 금속막으로서 구리막 및 구리 몰리브덴막 등의 구리계 금속막과 그에 대한 식각액 조성물이 주목을 받고 있다. 그런데, 구리계 금속막의 개발은 별론으로 하고, 현재까지 알려진 구리계 금속막에 대한 식각액 조성물들은 사용자의 요구를 충분히 만족시키지 못하고 있다. Chromium which was mainly used conventionally (Cr, specific resistance: 12.7 × 10 -8 Ωm), molybdenum (Mo, specific resistance: 5 × 10 -8 Ωm), aluminum (Al, specific resistance: 2.65 × 10 -8 Ωm), and alloys thereof Is difficult to be used for gate and data wiring used in a large-sized TFT LCD. Therefore, a copper-based metal film such as a copper film and a copper molybdenum film and an etchant composition therefor are attracting attention as a low resistance metal film. However, apart from the development of a copper-based metal film, etchant compositions for a copper-based metal film, which have hitherto been known, do not sufficiently satisfy the needs of users.
예를 들어, 대한민국 공개특허 10-2003-008237호에는 과산화수소수, 유기산, 인산염, 질소, 플루오르 화합물 및 탈이온수를 포함하는 구리 단일막 또는 구리 몰리브덴막의 식각용액이 개시된다.For example, Korean Patent Laid-Open Publication No. 10-2003-008237 discloses an etching solution of a copper single film or copper molybdenum film including hydrogen peroxide water, organic acids, phosphates, nitrogen, fluorine compounds, and deionized water.
또한, 대한민국 공개특허 10-2009-0042173호에는 과산화이황산암모늄((NH4)2S2O8, ammonium persulfate), 무기산, 아세테이트염, 불소함유 화합물, 술폰산 화합물, 아졸계 화합물 및 물을 포함하는 식각액 조성물이 개시된다. 이렇듯 구리계 금속막의 식각액에는 식각속도를 조절하기 위한 성분으로 아졸류 화합물을 사용하게 되나, 아졸류 화합물의 경우 공정 조건이나 다른 화합물의 영향으로 분해되어 시안화합물 등의 발생 원인이 될 수 있다.
In addition, Korean Patent Laid-Open Publication No. 10-2009-0042173 discloses an etchant composition comprising ammonium persulfate ((NH 4) 2 S 2 O 8, ammonium persulfate), an inorganic acid, an acetate salt, a fluorine-containing compound, a sulfonic acid compound, an azole compound, and water. . As described above, an azole compound is used as an ingredient for controlling the etching rate in the etching solution of the copper-based metal film. However, the azole compound may be decomposed under the influence of process conditions or other compounds to cause cyanide.
본 발명은 구리계 금속막의 식각시 주로 사용되는 아졸 화합물을 화학적으로 안정한 화합물로 대체함으로써 환경적으로 안전하면서도 아졸 화합물을 사용할 때와 동등 이상의 식각특성을 유지하는 구리계 금속막의 식각액 조성물을 제공하는 것을 목적으로 한다.The present invention provides an etching liquid composition of a copper-based metal film which is environmentally safe and maintains an etching property that is equal to or higher than that when using an azole compound by replacing a azole compound mainly used in etching a copper-based metal film with a chemically stable compound. The purpose.
또한, 본 발명은 식각시 직선성이 우수하며 낮은 각도의 테이퍼 프로파일을 제공하고, 금속막의 잔사를 발생시키지 않는 구리계 금속막의 식각액 조성물을 제공하는 것을 목적으로 한다.Another object of the present invention is to provide a copper-based metal film etchant composition which is excellent in linearity at the time of etching, provides a taper profile at a low angle, and does not generate a residue of a metal film.
또한, 본 발명은 게이트 전극과 게이트 배선 및 소스/드레인 전극과 데이터 배선의 일괄 식각이 가능한 구리계 금속막의 식각액 조성물을 제공하는 것을 목적으로 한다.Another object of the present invention is to provide a copper-based metal film etchant composition capable of collectively etching gate electrodes, gate wirings, source / drain electrodes, and data wirings.
또한, 본 발명은 상기 구리계 금속막의 식각액 조성물을 이용하여 액정표시장치용 어레이 기판을 제조하는 방법을 제공하는 것을 목적으로 한다.
In addition, an object of the present invention is to provide a method for manufacturing an array substrate for a liquid crystal display device using the etching liquid composition of the copper-based metal film.
본 발명은, a)기판 상에 게이트 전극을 형성하는 단계; b)상기 게이트 전극을 포함한 기판 상에 게이트 절연층을 형성하는 단계; c)상기 게이트 절연층 상에 반도체층을 형성하는 단계; d)상기 반도체층 상에 소스/드레인 전극을 형성하는 단계; 및 e)상기 드레인 전극에 연결된 화소전극을 형성하는 단계를 포함하는 액정표시장치용 어레이 기판의 제조방법에 있어서,The present invention comprises the steps of: a) forming a gate electrode on a substrate; b) forming a gate insulating layer on the substrate including the gate electrode; c) forming a semiconductor layer on the gate insulating layer; d) forming a source / drain electrode on the semiconductor layer; And e) forming a pixel electrode connected to the drain electrode.
상기 a)단계, 또는 d)단계는 The step a) or d)
조성물 총 중량에 대하여, A)산화제 1 내지 30중량%; B)화학식 1로 표시되는 다면체 실세스퀴옥산 0.1 내지 10중량%; 및 C)잔량의 물을 포함하는 식각액 조성물을 이용하여 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 액정표시장치용 어레이 기판의 제조방법을 제공한다.A) 1 to 30% by weight, based on the total weight of the composition; B) 0.1 to 10% by weight of a polyhedral silsesquioxane represented by Formula 1; And C) forming an electrode using an etchant composition containing a residual amount of water.
[화학식 1][Formula 1]
(R1SiO1 .5)n (R 1 SiO 1 .5) n
상기 화학식 1에서, n은 8 ~ 100이며, R1은 각각 독립적으로 수소, 알킬, 알킬렌, 알릴, 알릴렌; 또는 기능기를 갖는 알킬, 알킬렌, 아릴 및 아릴렌의 유도체에서 선택되는 것을 특징으로 한다.In Formula 1, n is 8 to 100, and R 1 is each independently hydrogen, alkyl, alkylene, allyl, allylene; Or derivatives of alkyl, alkylene, aryl and arylene having functional groups.
본 발명은, 조성물 총 중량에 대하여 A)산화제; B)화학식 1로 표시되는 다면체 실세스퀴옥산; 및 C)물을 포함하는 구리계 금속막의 식각액 조성물을 제공한다.
The present invention relates to a total weight of the composition A) oxidizing agent; B) a polyhedral silsesquioxane represented by Formula 1; And C) provides an etching liquid composition of the copper-based metal film comprising water.
본 발명의 식각액 조성물은 아졸 화합물을 화학적으로 안정한 화합물로 대체함으로써 환경적으로 안전하면서도 아졸 화합물을 사용할 때와 동등 이상의 식각특성을 유지할 수 있다.The etchant composition of the present invention can maintain an etching property that is equal to or higher than when using an azole compound while being environmentally safe by replacing the azole compound with a chemically stable compound.
또한, 본 발명의 식각액 조성물은 구리계 금속막을 식각할 때, 직선성이 우수한 테이퍼프로파일을 구현하며, 잔사를 발생시키지 않으므로 전기적인 쇼트나 배선의 불량, 휘도의 감소 등의 문제를 야기하지 않는다.In addition, the etching solution composition of the present invention realizes a taper profile having excellent linearity when etching a copper-based metal film, and does not generate residues, and thus does not cause problems such as electrical shorts, poor wiring, and reduced luminance.
또한, 본 발명의 식각액 조성물은 게이트 전극과 게이트 배선 및 소스/드레인 전극과 데이터 배선을 일괄 식각하는 것을 가능하게 하므로, 식각공정을 단순화시키며 공정수율을 극대화시킨다.In addition, the etchant composition of the present invention enables batch etching of the gate electrode, the gate wiring, the source / drain electrode, and the data wiring, thereby simplifying the etching process and maximizing the process yield.
또한, 본 발명의 식각액 조성물은 상기와 같은 효과를 제공하므로 대화면, 고 휘도의 회로가 구현되는 액정표시장치용 어레이 기판의 제조시에 매우 유용하게 사용될 수 있다.
In addition, since the etchant composition of the present invention provides the above effects, it can be very useful in manufacturing an array substrate for a liquid crystal display device having a large screen and a circuit having high luminance.
이하, 본 발명을 더욱 상세히 설명한다.
Hereinafter, the present invention will be described in more detail.
본 발명은, 조성물 총 중량에 대하여, A)산화제 1 내지 30중량%; B)화학식 1로 표시되는 다면체 실세스퀴옥산 0.1 내지 10중량%; 및 C)잔량의 물을 포함하는 구리계 금속막의 식각액 조성물을 제공한다.The present invention, A) 1 to 30% by weight based on the total weight of the composition; B) 0.1 to 10% by weight of a polyhedral silsesquioxane represented by Formula 1; And C) provides an etchant composition of the copper-based metal film comprising a residual amount of water.
[화학식 1][Formula 1]
(R1SiO1 .5)n
(R 1 SiO 1 .5) n
상기 화학식 1에서, n은 8 ~ 100이며, R1은 각각 독립적으로 수소, 알킬, 알킬렌, 알릴, 알릴렌; 또는 기능기를 갖는 알킬, 알킬렌, 아릴 및 아릴렌의 유도체에서 선택되는 것을 특징으로 한다.In Formula 1, n is 8 to 100, and R 1 is each independently hydrogen, alkyl, alkylene, allyl, allylene; Or derivatives of alkyl, alkylene, aryl and arylene having functional groups.
본 발명에서 구리계 금속막은 막의 구성성분 중에 구리가 포함되는 것으로서, 순수 구리막 및 구리 합금막에서 선택되는 단일막; 및 상기 순수 구리막 및 구리 합금막 중에서 선택되는 하나 이상의 막과 몰리브덴막, 몰리브덴 합금막, 티타늄막, 티타늄 합금막, 알루미늄막 및 알루미늄 합금막으로 이루어진 군으로부터 선택되는 하나 이상의 막을 포함하는 다층막을 포함하는 개념이다. In the present invention, the copper-based metal film includes copper as a component of the film, and includes a single film selected from a pure copper film and a copper alloy film; And between the pure copper film and the copper alloy film And a multilayer film comprising at least one film selected from the group consisting of a molybdenum film, a molybdenum alloy film, a titanium film, a titanium alloy film, an aluminum film and an aluminum alloy film.
상기에서 구리 합금막은 순수 구리, 구리의 질화물, 구리의 산화물 또는 이들 중에서 선택되는 1종과; 알루미늄(Al), 마그네슘(Mg), 칼슘(Ca), 티타늄(Ti), 은(Ag), 크롬(Cr), 망간(Mn), 철(Fe), 지르코늄(Zr), 니오븀(Nb), 몰리브덴(Mo), 팔라듐(Pd), 하프늄(Hf), 탄탈륨(Ta) 및 텅스텐(W)으로 이루어진 군에서 선택되는 1종 이상의 금속과의 합금으로 이루어진 막을 의미한다.In the above copper alloy film is pure copper, copper nitride, oxide of copper or one selected from these; (Al), magnesium, calcium, titanium, silver, chromium, manganese, iron, zirconium, niobium, Means a film made of an alloy of at least one metal selected from the group consisting of molybdenum (Mo), palladium (Pd), hafnium (Hf), tantalum (Ta) and tungsten (W).
상기 다층막의 예로는, 구리/몰리브덴막, 구리/몰리브덴 합금막, 구리 합금/몰리브덴 합금막, 구리/티타늄막 등의 이중막, 또는 3중막을 들 수 있다. Examples of the multilayer film include a double film such as a copper / molybdenum film, a copper / molybdenum alloy film, a copper alloy / molybdenum alloy film, a copper / titanium film, or a triple film.
상기 구리/몰리브덴막은 몰리브덴층과 상기 몰리브덴층 상에 형성된 구리층을 포함하는 것을 의미하며, 상기 구리/몰리브덴 합금막은 몰리브덴 합금층과 상기 몰리브덴 합금층 상에 형성된 구리층을 포함하는 것을 의미하며, 상기 구리 합금/몰리브덴 합금막은 몰리브덴 합금층과 상기 몰리브덴 합금층 상에 형성된 구리 합금층을 포함하는 것을 의미하며, 상기 구리/티타늄막은 티타늄층과 상기 티타늄층 상에 형성된 구리층을 포함하는 것을 의미한다.The copper / molybdenum film includes a molybdenum layer and a copper layer formed on the molybdenum layer, and the copper / molybdenum alloy film includes a molybdenum alloy layer and a copper layer formed on the molybdenum alloy layer, The copper alloy / molybdenum alloy film means that the copper / titanium film includes a molybdenum alloy layer and a copper alloy layer formed on the molybdenum alloy layer, and the copper / titanium film includes a titanium layer and a copper layer formed on the titanium layer.
또한, 상기 몰리브덴 합금층은 몰리브덴, 몰리브덴의 산화물, 몰리브덴의 질화물 또는 이들 중에서 선택되는 1종과 예컨대, 티타늄(Ti), 탄탈륨(Ta), 크롬(Cr), 니켈(Ni), 네오디늄(Nd), 및 인듐(In) 등으로 이루어진 군에서 선택되는 1종 이상의 금속과의 합금으로 이루어진 층을 의미한다.In addition, the molybdenum alloy layer is molybdenum, oxide of molybdenum, nitride of molybdenum or one selected from them, for example titanium (Ti), tantalum (Ta), chromium (Cr), nickel (Ni), neodymium (Nd) ), And indium (In) means a layer made of an alloy with at least one metal selected from the group consisting of.
특히, 본 발명의 식각액 조성물은 구리막, 구리합금막, 구리/몰리브덴 합금막 또는 구리/티타늄막에 바람직하게 적용될 수 있다.
In particular, the etchant composition of the present invention can be preferably applied to a copper film, a copper alloy film, a copper / molybdenum alloy film or a copper / titanium film.
본 발명의 식각액 조성물에 포함되는 A)산화제는 구리계 금속막을 식각하는 주성분이다.The oxidizing agent A) included in the etchant composition of the present invention is a main component for etching the copper-based metal film.
상기 A)산화제는 이 분야에서 사용되는 물질로서 구리를 산화시킬 수 있는 것이라면 특별히 한정되지 않으나, 과초산, 과산화수소, 옥손, 암모늄퍼설페이트, 소듐퍼설페이트, 포타슘퍼설페이트 등의 과산화물; 인산, 질산, 초산, 황산 등의 산(acid); 염화구리, 황산구리, 질산구리, 염화철, 황산철, 질산철 등의 금속염으로 이루어진 군에서 선택되는 1종 이상인 것이 바람직하다.
The A) oxidizing agent is not particularly limited as long as it can oxidize copper as a material used in this field, but may include peroxides such as peracetic acid, hydrogen peroxide, oxone, ammonium persulfate, sodium persulfate and potassium persulfate; Acids such as phosphoric acid, nitric acid, acetic acid and sulfuric acid; It is preferable that it is 1 or more types chosen from the group which consists of metal salts, such as copper chloride, copper sulfate, copper nitrate, iron chloride, iron sulfate, iron nitrate.
본 발명의 식각액 조성물에 포함되는 B)화학식 1로 표시되는 다면체 실세스퀴옥산은 구리계 금속의 식각 속도를 조절하며 패턴의 시디로스(CD Loss)를 줄여주어 공정상의 마진을 높이는 역할을 한다. The polyhedral silsesquioxane represented by B) Chemical Formula 1 included in the etchant composition of the present invention controls the etching rate of the copper-based metal and serves to increase the process margin by reducing the CD loss of the pattern.
[화학식 1] [Formula 1]
(R1SiO1 .5)n (R 1 SiO 1 .5) n
상기 화학식 1로 표시되는 실세스퀴옥산은 다면체 화합물로서, 열적 안정성, 내구성 및 부식 방지성의 특징으로 인하여 오일, 고무, 수지 등의 형태로 내열성 재료, 내후성 재료, 내충격성 재료, 포장재, 봉입재, 절연성 재료, 윤활제, 박리제, 반 가스 투과성 코팅제 등에서 광범위하게 사용되고 있으며, 산업 전반에 걸쳐 극히 중요한 폴리머로 인식되고 있다. 그러나 이를 포함한 식각액 조성물의 효과에 대해서는 알려진바 전무하다.
Silsesquioxane represented by the formula (1) is a polyhedral compound, due to the characteristics of thermal stability, durability and corrosion resistance, heat-resistant material, weather resistance material, impact resistance material, packaging material, encapsulant, It is widely used in insulating materials, lubricants, release agents, semi-gas permeable coatings, etc., and is recognized as an extremely important polymer throughout the industry. However, there is no known about the effect of the etchant composition including the same.
상기 화학식 1에서, n은 8 ~ 100이며, R1은 각각 독립적으로 수소, 알킬, 알킬렌, 알릴, 알릴렌; 또는 기능기를 갖는 알킬, 알킬렌, 아릴 및 아릴렌의 유도체이며, 다면체 실세스퀴옥산은 램덤(random)형, 사다리형, 케이지(Cage)형 및 부분적 케이지(partial cage)형 등의 다양한 구조를 가질 수 있으며, 그 구조가 특별히 제한되지 않는다.
In Formula 1, n is 8 to 100, and R 1 is each independently hydrogen, alkyl, alkylene, allyl, allylene; Or derivatives of alkyl, alkylene, aryl and arylene having functional groups, and the polyhedral silsesquioxane has various structures such as random, ladder, cage and partial cage types. It may have, and the structure is not particularly limited.
본 발명의 식각액 조성물에 포함되는 C)잔량의 물은 특별히 한정되는 것은 아니나, 탈이온수가 바람직하다. 물의 비저항 값(즉, 물속에 이온이 제거된 정도)이 18㏁/㎝ 이상인 탈이온수를 사용하는 것이 더욱 바람직하다.
Although C) residual amount of water contained in the etching liquid composition of this invention is not specifically limited, Deionized water is preferable. It is more preferable to use deionized water having a specific resistance value of the water (that is, the degree of removal of ions in the water) of 18 kW / cm or more.
본 발명의 식각액 조성물은 전술한 성분 이외에 D)함불소 화합물, E)포스폰산 유도체 및 그의 염, F)다가 알코올 화합물, G)술폰산 화합물 및 H)킬레이트제를 더 포함할 수 있다.
The etchant composition of the present invention may further include D) fluorine-containing compounds, E) phosphonic acid derivatives and salts thereof, F) polyhydric alcohol compounds, G) sulfonic acid compounds, and H) chelating agents in addition to the aforementioned components.
본 발명의 식각액 조성물에 포함되는 D)함불소 화합물은 잔사를 제거하는 주성분으로서, 적층막이 티타늄인 경우에는 티타늄 금속막을 식각하는 역할까지 할 수 있다.D) fluorine-containing compound included in the etchant composition of the present invention as a main component to remove the residue, if the laminated film is titanium may serve to etch the titanium metal film.
상기 D)함불소 화합물은, 이 분야에서 통상적으로 사용되는 물질로서 용액 내에서 플루오르 이온 혹은 다원자 플루오르 이온으로 해리될 수 있는 것이라면 특별히 제한되지 않으나, 불화암모늄(ammonium fluoride: NH4F), 불화나트륨(sodium fluoride: NaF), 불화칼륨(potassium fluoride: KF), 중불화암모늄(ammonium bifluoride: NH4FHF), 중불화나트륨(sodium bifluoride: NaFHF) 및 중불화칼륨(potassium bifluoride: KFHF)으로 이루어진 군으로부터 선택되는 1종 또는 2종 이상인 것이 바람직하다.
The D) fluorine-containing compound is not particularly limited as long as it can be dissociated into fluorine ions or polyatomic fluoride ions in a solution as a material commonly used in this field, and ammonium fluoride (NH 4 F), fluoride Sodium fluoride (NaF), potassium fluoride (KF), ammonium bifluoride (NH 4 FHF), sodium bifluoride (NaFHF), and potassium bifluoride (KFHF) It is preferable that it is 1 type, or 2 or more types selected from a group.
본 발명의 식각액 조성물에 포함되는 E)포스폰산 유도체 및 그의 염으로부터 선택되는 1종 이상의 화합물은 구리막을 식각할 때 식각액에 용해되는 구리 이온을 킬레이팅하여 구리이온의 활동도를 억제함으로써 과산화수소의 분해 반응을 억제한다. 이렇게 구리이온의 활동도를 낮추게 되면 식각액을 사용하는 동안 안정적으로 공정을 진행할 수 있다. At least one compound selected from E) phosphonic acid derivatives and salts thereof included in the etchant composition of the present invention decomposes hydrogen peroxide by chelating copper ions dissolved in the etchant when the copper film is etched to inhibit the activity of the copper ions. Suppress the reaction. When the activity of copper ions is lowered in this way, the process can be stably performed while using the etching solution.
상기 포스폰산 유도체 및 그의 염으로부터 선택되는 1종 이상의 화합물에 있어서, 포스폰산 유도체의 대표적인 예로는 1-히드록시에틸리덴-1,1-디포스포닉산(HEDP: 1-hydroxyethylidene-1,1-diphosphonic acid)을 들 수 있으며, 포스폰산 유도체 염의 대표적인 예로는 1-히드록시에틸리덴-1,1-디포스포닉산의 나트륨 또는 칼륨염을 들 수 있다.
In at least one compound selected from the above phosphonic acid derivatives and salts thereof, representative examples of phosphonic acid derivatives include 1-hydroxyethylidene-1,1-diphosphonic acid (HEDP: 1-hydroxyethylidene-1,1- diphosphonic acid), and representative examples of the phosphonic acid derivative salts include sodium or potassium salts of 1-hydroxyethylidene-1,1-diphosphonic acid.
본 발명의 식각액 조성물에 포함되는 F)다가 알코올 화합물은 계면간 접촉 저항(표면장력)을 줄여주어 기판의 균일한 식각이 가능하게 한다. 상기 F)다가 알코올로는 식각액에 견딜 수 있고 다른 성분들과 상용성이 있는 것이 바람직하다. 다가 알코올의 대표적인 예로는 글리세롤(glycerol), 에틸렌글리콜(EG), 프로필렌글리콜(PG), 디에틸렌글리콜(DEG), 트리에틸렌글리콜(TEG), 디프로필렌글리콜(DPG), 폴리에틸렌글리콜(PEG), 폴리프로필렌글리콜(PPG) 등을 들 수 있으며, 바람직하게는 폴리에틸렌글리콜(PEG), 폴리프로필렌글리콜(PPG)를 들 수 있다. 이들은 단독으로 또는 2종 이상이 함께 사용될 수 있다.
The F) polyalcohol compound included in the etchant composition of the present invention reduces interfacial contact resistance (surface tension) to enable uniform etching of the substrate. As the F) polyalcohol, it is preferable to withstand the etching solution and be compatible with other components. Representative examples of polyhydric alcohols are Glycerol, ethylene glycol (EG), propylene glycol (PG), Diethylene glycol (DEG), triethylene glycol (TEG), dipropylene glycol (DPG), polyethylene glycol (PEG), polypropylene glycol (PPG), and the like, and preferably polyethylene glycol (PEG) and polypropylene. Glycol (PPG). These may be used alone or in combination of two or more.
본 발명의 식각액 조성물에 포함되는 G)술폰산을 포함하는 술폰산 화합물은 상기 구리를 포함하는 금속층을 식각하는 주성분인 산화제의 분해를 억제시킴으로써 상기 식각액의 안정성을 보장할 수 있다. 상기 술폰산 화합물은 예를 들어, 벤젠술폰산(Benzenesulfonic acid), p-톨루엔술폰산(para-Toluenesulfonic), 메탄술폰산화합물(Methanesulfonic acid), 아미도술폰산(Amidosulnic acid) 등을 포함할 수 있다.
The sulfonic acid compound including G) sulfonic acid included in the etchant composition of the present invention may ensure the stability of the etchant by inhibiting decomposition of an oxidant, which is a main component of the metal layer including copper. The sulfonic acid compound may include, for example, benzenesulfonic acid (benzenesulfonic acid), p-toluenesulfonic acid (para-Toluenesulfonic), methanesulfonic acid (Methanesulfonic acid), amidosulfonic acid (Amidosulnic acid) and the like.
본 발명의 식각액 조성물에 포함되는 H)킬레이트제는 테이프 프로파일이나 식각속도와는 크게 상관이 없지만 많은 수의 기판을 식각할 시에 식각 특성이 변하는 것을 방지한다.The H) chelating agent included in the etchant composition of the present invention is not significantly related to the tape profile or the etching rate, but prevents the etching characteristics from changing when etching a large number of substrates.
상기 H)킬레이트제는 특별히 한정되지 않고 다양한 종류가 사용 가능하며, 바람직하게는 포스포닉 계열(Phosphonic series); 설포닉 계열(Sulfonic series); 아세테이트 계열(Acetate series); 알라닌 (alanine) 계열, 아미노부티르산 (aminobutyric acid) 계열, 글루탐산 (glutamic acid) 계열, 글리신 (glycine) 계열, 이미노디아세트산 (iminodiacetic acid) 계열, 니트릴로트리아세트산 (nitrilotriacetic acid) 계열, 사르코신 (sarcosine) 계열 등과 같은 아미노기 및 카르복실산기를 가지고 있는 수용성 화합물들은 모두 적용 가능하다. The H) chelating agent is not particularly limited and can be used in various kinds, preferably phosphonic series (Phosphonic series); Sulfonic series; Acetate series; Alanine series, aminobutyric acid series, glutamic acid series, glycine series, iminodiacetic acid series, nitrilotriacetic acid series, sarcosine Both water-soluble compounds having an amino group and a carboxylic acid group, such as the series, are applicable.
상기 킬레이트제는 식각액의 보관기간 및 안정성 확보에 유리하다. 또한 구리계 금속막 시에 필연적으로 발생하는 구리 및 타 금속의 이온들을 킬레이션(chelation) 반응을 통해 비활성화 시킴으로써 이온들에 의해 발생할 수 있는 추가적인 반응들을 막아주어 많은 수의 기판을 식각하여도 식각 특성이 변하지 않는 장점을 제공한다. 특히 구리막의 경우 식각 용액내에 구리 이온이 다량 잔존할 경우에 패시베이션(passivation) 막을 형성하여 까맣게 산화된 후 더 이상 식각되지 않는 경우가 많이 발생할 수 있으나 이 첨가제를 첨가하였을 경우 이런 현상을 막을 수 있다.
The chelating agent is advantageous for ensuring the storage period and stability of the etching solution. In addition, by inactivating ions of copper and other metals inevitably generated during the metal-based metal layer through chelation reaction, additional reactions caused by the ions are prevented, thereby etching characteristics even when etching a large number of substrates. This provides an unchanging advantage. Particularly, in the case of a copper film, when a large amount of copper ions remain in the etching solution, a passivation film may be formed to oxidize black and then no longer etched. However, when this additive is added, this phenomenon may be prevented.
본 발명의 식각액 조성물은 구리계 금속막으로 이루어진 액정표시장치의 게이트 전극과 게이트 배선 및 소스/드레인 전극과 데이터 배선을 일괄 식각할 수 있다.
The etching liquid composition of the present invention may collectively etch the gate electrode, the gate wiring, the source / drain electrode, and the data wiring of the liquid crystal display device made of a copper-based metal film.
또한, 본 발명은 In addition,
Ⅰ)기판 상에 구리계 금속막을 형성하는 단계;I) forming a copper-based metal film on a substrate;
Ⅱ)상기 Ⅰ)단계에서 형성된 구리계 금속막 상에 선택적으로 광반응 물질을 남기는 단계; 및II) selectively leaving a photoreactive material on the copper-based metal film formed in the step I); And
Ⅲ) 본 발명의 식각액 조성물을 사용하여 상기 Ⅱ)단계에서 처리된 구리계 금속막을 식각하는 단계를 포함하는 구리계 금속막의 식각방법을 제공한다.
III) using the etchant composition of the present invention provides an etching method of a copper-based metal film comprising the step of etching the copper-based metal film treated in step II).
또한, 본 발명은 In addition,
a)기판 상에 게이트 전극을 형성하는 단계;a) forming a gate electrode on a substrate;
b)상기 게이트 전극을 포함한 기판 상에 게이트 절연층을 형성하는 단계;b) forming a gate insulating layer on the substrate including the gate electrode;
c)상기 게이트 절연층 상에 반도체층을 형성하는 단계;c) forming a semiconductor layer on the gate insulating layer;
d)상기 반도체층 상에 소스/드레인 전극을 형성하는 단계; 및d) forming a source / drain electrode on the semiconductor layer; And
e)상기 드레인 전극에 연결된 화소전극을 형성하는 단계를 포함하는 액정표시장치용 어레이 기판의 제조방법에 있어서,e) forming a pixel electrode connected to the drain electrode, the method comprising the steps of:
상기 a)단계는 기판 상에 구리계 금속막을 형성하고, 상기 구리계 금속막을 본 발명의 식각액 조성물로 식각하여 게이트 전극을 형성하는 단계 및/또는 The step a) may include forming a copper-based metal film on the substrate, etching the copper-based metal film with the etchant composition of the present invention to form a gate electrode, and / or
상기 d)단계는 반도체층 상에 구리계 금속막을 형성하고 상기 구리계 금속막을 본 발명의 식각액 조성물로 식각하여 소스/드레인 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 액정표시장치용 어레이 기판의 제조방법을 제공한다.
The step d) includes forming a copper-based metal film on the semiconductor layer and etching the copper-based metal film with the etchant composition of the present invention to form source / drain electrodes. It provides a manufacturing method.
또한, 본 발명은, 본 발명의 식각액 조성물을 사용하여 식각된 게이트 전극 및 소스/드레인 전극 중에서 어느 하나 이상을 포함하는 액정표시장치용 어레이 기판을 제공한다.
The present invention also provides an array substrate for a liquid crystal display comprising at least one of a gate electrode and a source / drain electrode etched using the etchant composition of the present invention.
Claims (17)
b)상기 게이트 전극을 포함한 기판 상에 게이트 절연층을 형성하는 단계;
c)상기 게이트 절연층 상에 반도체층을 형성하는 단계;
d)상기 반도체층 상에 소스/드레인 전극을 형성하는 단계; 및
e)상기 드레인 전극에 연결된 화소전극을 형성하는 단계를 포함하는 액정표시장치용 어레이 기판의 제조방법에 있어서,
상기 a)단계, 또는 d)단계에서
조성물 총 중량에 대하여,
A)산화제 1 내지 30중량%;
B)화학식 1로 표시되는 다면체 실세스퀴옥산 0.1 내지 10중량%; 및
C)잔량의 물을 포함하는 식각액 조성물을 이용하여 전극을 형성하는 것을 특징으로 하는 액정표시장치용 어레이 기판의 제조방법.
[화학식 1]
(R1SiO1 .5)n
n은 8 ~ 100이며, R1은 각각 독립적으로 수소, 알킬, 알킬렌, 알릴, 알릴렌; 또는 기능기를 갖는 알킬, 알킬렌, 아릴 및 아릴렌의 유도체이다.
a) forming a gate electrode on a substrate;
b) forming a gate insulating layer on the substrate including the gate electrode;
c) forming a semiconductor layer on the gate insulating layer;
d) forming a source / drain electrode on the semiconductor layer; And
e) forming a pixel electrode connected to the drain electrode, the method comprising the steps of:
In step a) or d)
With respect to the total weight of the composition,
A) 1 to 30% by weight of oxidizing agent;
B) 0.1 to 10% by weight of a polyhedral silsesquioxane represented by Formula 1; And
C) A method of manufacturing an array substrate for a liquid crystal display device, characterized in that an electrode is formed using an etchant composition containing residual amount of water.
[Formula 1]
(R 1 SiO 1 .5) n
n is 8 to 100, and R 1 is each independently hydrogen, alkyl, alkylene, allyl, allylene; Or derivatives of alkyl, alkylene, aryl and arylene having functional groups.
상기 a)단계는 기판 상에 구리계 금속막을 형성하고, 상기 구리계 금속막을 상기 식각액 조성물로 식각하여 게이트 전극을 형성하고,
상기 d)단계는 반도체층 상에 구리계 금속막을 형성하고 상기 구리계 금속막을 상기 식각액 조성물로 식각하여 소스/드레인 전극을 형성하는 것을 특징으로 하는 액정표시장치용 어레이 기판의 제조방법.
The method according to claim 1,
In step a), a copper-based metal film is formed on the substrate, and the copper-based metal film is etched with the etchant composition to form a gate electrode.
And d) forming a copper-based metal film on the semiconductor layer and etching the copper-based metal film with the etchant composition to form a source / drain electrode.
A)산화제 1 내지 30중량%;
B)화학식 1로 표시되는 다면체 실세스퀴옥산 0.1 내지 10중량%; 및
C)잔량의 물을 포함하는 것을 특징으로 하는 구리계 금속막의 식각액 조성물.
[화학식 1]
(R1SiO1 .5)n
n은 8 ~ 100이며, R1은 각각 독립적으로 수소, 알킬, 알킬렌, 알릴, 알릴렌; 또는 기능기를 갖는 알킬, 알킬렌, 아릴 및 아릴렌의 유도체이다.
With respect to the total weight of the composition,
A) 1 to 30% by weight of oxidizing agent;
B) 0.1 to 10% by weight of a polyhedral silsesquioxane represented by Formula 1; And
C) An etchant composition of a copper-based metal film comprising a residual amount of water.
[Formula 1]
(R 1 SiO 1 .5) n
n is 8 to 100, and R 1 is each independently hydrogen, alkyl, alkylene, allyl, allylene; Or derivatives of alkyl, alkylene, aryl and arylene having functional groups.
상기 산화제는 과초산, 과산화수소, 옥손, 암모늄퍼설페이트, 소듐퍼설페이트, 포타슘퍼설페이트 등의 과산화물; 인산, 질산, 초산, 황산 등의 산(acid); 염화구리, 황산구리, 질산구리, 염화철, 황산철, 질산철 등의 금속염으로 이루어진 군에서 선택되는 1종 이상인 것을 특징으로 하는 구리계 금속막의 식각액 조성물.
The method according to claim 3,
The oxidizing agent may include peroxides such as peracetic acid, hydrogen peroxide, oxone, ammonium persulfate, sodium persulfate and potassium persulfate; Acids such as phosphoric acid, nitric acid, acetic acid and sulfuric acid; An etching solution composition of a copper-based metal film, characterized in that at least one member selected from the group consisting of metal salts such as copper chloride, copper sulfate, copper nitrate, iron chloride, iron sulfate, iron nitrate.
D)함불소 화합물을 더 포함하는 것을 특징으로 하는 구리계 금속막의 식각액 조성물.
The method according to claim 3,
D) An etchant composition of a copper-based metal film further comprising a fluorine-containing compound.
상기 함불소화합물은 불화암모늄(ammonium fluoride: NH4F), 불화나트륨(sodium fluoride: NaF), 불화칼륨(potassium fluoride: KF), 중불화암모늄(ammonium bifluoride: NH4FHF), 중불화나트륨(sodium bifluoride: NaFHF) 및 중불화칼륨(potassium bifluoride: KFHF)으로 이루어진 군으로부터 선택되는 1종 또는 2종 이상인 것을 특징으로 하는 구리계 금속막의 식각액 조성물.
The method according to claim 5,
The fluorine-containing compound is ammonium fluoride (NH 4 F), sodium fluoride (NaF), potassium fluoride (potassium fluoride (KF)), ammonium bifluoride (NH 4 FHF), sodium bifluoride ( Sodium bifluoride (NaFHF) and potassium bifluoride (potassium bifluoride: KFHF) is an etching liquid composition of the copper-based metal film, characterized in that at least one selected from the group consisting of.
E)포스폰산 유도체 및 그의 염을 더 포함하는 것을 특징으로 하는 구리계 금속막의 식각액 조성물.
The method according to claim 3,
E) A phosphonic acid derivative and a salt thereof, the etching liquid composition of the copper-based metal film characterized by the above-mentioned.
상기 포스폰산 유도체 및 그의 염은 1-히드록시에틸리덴-1,1-디포스포닉산(HEDP: 1-hydroxyethylidene-1,1-diphosphonic acid), 1-히드록시에틸리덴-1,1-디포스포닉산의 나트륨 및 칼륨염으로 이루어진 군으로부터 선택되는 1종 이상인 것을 특징으로 하는 구리계 금속막의 식각액 조성물.
The method of claim 7,
The phosphonic acid derivatives and salts thereof are 1-hydroxyethylidene-1,1-diphosphonic acid (HEDP: 1-hydroxyethylidene-1,1-diphosphonic acid), 1-hydroxyethylidene-1,1- An etching solution composition of a copper-based metal film, characterized in that at least one member selected from the group consisting of sodium and potassium salts of diphosphonic acid.
F)다가 알코올 화합물을 더 포함하는 것을 특징으로 하는 구리계 금속막의 식각액 조성물.
The method according to claim 3,
F) The etching liquid composition of the copper-type metal film further containing a polyhydric alcohol compound.
상기 다가 알코올 화합물은 글리세롤(glycerol), 에틸렌글리콜(EG), 프로필렌글리콜(PG), 디에틸렌글리콜(DEG), 트리에틸렌글리콜(TEG), 디프로필렌글리콜(DPG), 폴리에틸렌글리콜(PEG), 폴리프로필렌글리콜(PPG) 으로 이루어진 군으로부터 선택되는 1종 이상인 것을 특징으로 하는 구리계 금속막의 식각액 조성물.
The method according to claim 9,
The polyhydric alcohol compound is glycerol (glycerol), ethylene glycol (EG), propylene glycol (PG), At least one member selected from the group consisting of diethylene glycol (DEG), triethylene glycol (TEG), dipropylene glycol (DPG), polyethylene glycol (PEG), and polypropylene glycol (PPG). Etch solution composition.
G)술폰산 화합물을 더 포함하는 것을 특징으로 하는 구리계 금속막의 식각액 조성물.
The method according to claim 3,
G) An etching solution composition of the copper-based metal film further comprising a sulfonic acid compound.
상기 술폰산 화합물은 벤젠술폰산(Benzenesulfonic acid), p-톨루엔술폰산(para-Toluenesulfonic), 메탄술폰산화합물(Methanesulfonic acid) 및 아미도술폰산(Amidosulnic acid)으로 이루어진 군으로부터 선택되는 1종 이상인 것을 특징으로 하는 구리계 금속막의 식각액 조성물.
The method of claim 11,
The sulfonic acid compound is at least one member selected from the group consisting of benzenesulfonic acid (benzenesulfonic acid), p-toluenesulfonic acid (para-Toluenesulfonic), methanesulfonic acid compound (methanesulfonic acid) and amidosulfonic acid (Amidosulnic acid). Etch solution composition of the metal film.
H)킬레이트제를 더 포함하는 것을 특징으로 하는 구리계 금속막의 식각액 조성물.
The method according to claim 3,
H) The etching liquid composition of the copper-type metal film further containing a chelating agent.
상기 킬레이트제는 포스포닉 계열(Phosphonic series); 설포닉 계열(Sulfonic series); 아세테이트 계열(Acetate series); 알라닌 (alanine) 계열, 아미노부티르산 (aminobutyric acid) 계열, 글루탐산 (glutamic acid) 계열, 글리신 (glycine) 계열, 이미노디아세트산 (iminodiacetic acid) 계열, 니트릴로트리아세트산 (nitrilotriacetic acid) 계열 및 사르코신 (sarcosine) 계열로 이루어진 군으로부터 선택되는 1종 이상인 것을 특징으로 하는 구리계 금속막의 식각액 조성물.
The method according to claim 13,
The chelating agent is a phosphonic series (Phosphonic series); Sulfonic series; Acetate series; Alanine series, aminobutyric acid series, glutamic acid series, glycine series, iminodiacetic acid series, nitrilotriacetic acid series and sarcosine Etching liquid composition of the copper-based metal film, characterized in that at least one selected from the group consisting of.
상기 구리계 금속막은
1) 구리 또는 구리 합금의 단일막; 및
2) 구리막 및 구리 합금막으로 이루어진 군에서 선택되는 하나 이상의 막과, 몰리브덴막, 몰리브덴 합금막, 티타늄막 및 티타늄 합금막으로 이루어진 군으로부터 선택되는 하나 이상의 막을 포함하는 다층막인 것을 특징으로 하는 구리계 금속막의 식각액 조성물.
The method according to claim 3,
The copper-based metal film
1) a single film of copper or copper alloy; And
2) a copper film comprising at least one film selected from the group consisting of a copper film and a copper alloy film, and at least one film selected from the group consisting of molybdenum film, molybdenum alloy film, titanium film and titanium alloy film Etch solution composition of the metal film.
Ⅱ)상기 Ⅰ)단계에서 형성된 구리계 금속막 상에 선택적으로 광반응 물질을 남기는 단계; 및
Ⅲ) 청구항 3의 식각액 조성물을 사용하여 상기 Ⅱ)단계에서 처리된 구리계 금속막을 식각하는 단계를 포함하는 구리계 금속막의 식각방법.
I) forming a copper-based metal film on a substrate;
II) selectively leaving a photoreactive material on the copper-based metal film formed in the step I); And
III) Etching the copper-based metal film comprising etching the copper-based metal film treated in the step II) using the etching solution composition of claim 3.
An array substrate for a liquid crystal display device comprising at least one of a gate electrode and a source / drain electrode etched using the etchant composition of claim 3.
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