KR20130058266A - Apparatus of depositing thin film - Google Patents

Apparatus of depositing thin film Download PDF

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Publication number
KR20130058266A
KR20130058266A KR1020110124184A KR20110124184A KR20130058266A KR 20130058266 A KR20130058266 A KR 20130058266A KR 1020110124184 A KR1020110124184 A KR 1020110124184A KR 20110124184 A KR20110124184 A KR 20110124184A KR 20130058266 A KR20130058266 A KR 20130058266A
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KR
South Korea
Prior art keywords
thin film
chamber
lead
deposition apparatus
film deposition
Prior art date
Application number
KR1020110124184A
Other languages
Korean (ko)
Inventor
송준호
Original Assignee
세메스 주식회사
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Publication date
Application filed by 세메스 주식회사 filed Critical 세메스 주식회사
Priority to KR1020110124184A priority Critical patent/KR20130058266A/en
Publication of KR20130058266A publication Critical patent/KR20130058266A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: An apparatus for deposing a thin film is provided to prevent the damage of a lead by using a heat radiation part consisting of two plates. CONSTITUTION: A chamber(110) has a process space for forming a thin film on a substrate. A disk is placed in the chamber. A lead(111) is installed in the upper part of the chamber. A heat radiation part(210) protects the lead. The heat radiation part consists of two plates(211,213) in the ceiling of the lead.

Description

Thin film deposition apparatus {Apparatus of depositing thin film}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film deposition apparatus, and more particularly, to a thin film deposition apparatus such as an organometallic thin film deposition apparatus or the like used for manufacturing a light emitting device.

An example of a thin film deposition apparatus such as an organometallic chemical vapor deposition apparatus for obtaining a light emitting device is disclosed in Korean Patent Application Laid-Open No. 2011-11267 (hereinafter referred to as 'quoting document'). The thin film deposition apparatus disclosed in the cited document includes a chamber for forming a processing space for forming a thin film on a substrate, a lid for opening and closing the mentioned chamber, a disk on which the substrate is seated, and the like.

And the formation of a thin film using the aforementioned thin film deposition apparatus takes place at a high temperature. As described above, since the thin film is formed at a high temperature, the thin film deposition apparatus frequently generates heat damage. In particular, in the case of a lead, a situation occurs due to the heat mentioned.

Therefore, in the case of a thin film deposition apparatus in which a process is performed at a high temperature, such as a conventional organometallic thin film deposition apparatus, a situation in which leads and the like are frequently damaged by heat occurs, and thus thin film deposition is not performed under the set process conditions. There is a problem in that a thin film having a thickness cannot be easily formed.

SUMMARY OF THE INVENTION An object of the present invention is to provide a thin film deposition apparatus capable of sufficiently protecting a lead from high temperature heat transferred toward the lead when the thin film is deposited.

According to an embodiment of the present invention, a thin film deposition apparatus includes a chamber for providing a processing space for forming a thin film on a substrate, a disk located in the chamber, and a substrate on which the substrate provided into the chamber is seated; A lid installed above the chamber to enable opening and closing of a processing space, and a ceiling of the lid to protect the lid from heat transferred to the lid from inside the chamber when a thin film is formed on the substrate. The ceiling is provided with a heat dissipation part consisting of two sheets of different materials.

In the thin film deposition apparatus according to the aforementioned embodiment, the heat dissipation part may include a first plate provided toward the ceiling, a first plate made of quartz, and a second plate made of graphite. Can be.

According to the mentioned thin film deposition apparatus, the heat dissipation part is provided in the lid of the ceiling side inside a chamber. In particular, it comprises two plates having different materials including a first plate made of quartz and a second plate made of graphite as the heat radiating part.

Therefore, when the thin film is deposited in a high temperature atmosphere using the aforementioned thin film deposition apparatus, even when high temperature heat is transferred to the lead, the heat dissipation part sufficiently blocks heat transmitted to the lead, thereby sufficiently preventing the lead from being damaged. . Therefore, in the case of a thin film deposition apparatus in which a process is performed at a high temperature, such as an organometallic chemical vapor deposition apparatus, the thin film deposition is performed under a set process condition of a high temperature atmosphere because the aforementioned heat dissipation unit can sufficiently prevent damage such as bending of a lead by heat. Can be easily performed.

Therefore, in the case of using the thin film deposition apparatus of the present invention, it is possible to form a thin film having a uniform thickness more easily by preventing the lead sufficiently from damage even under the process conditions of a high temperature atmosphere.

1 is a schematic diagram showing a thin film deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic diagram illustrating a heat dissipation unit included in the thin film deposition apparatus of FIG. 1.

While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments. It is to be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but on the contrary, is intended to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. In describing the drawings, similar reference numerals are used for similar components. The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In the present application, the term "comprises" or "comprising ", etc. is intended to specify that there is a stated feature, figure, step, operation, component, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

Example

1 is a schematic diagram illustrating a thin film deposition apparatus according to an exemplary embodiment of the present invention, and FIG. 2 is a schematic diagram illustrating a heat dissipation unit included in the thin film deposition apparatus of FIG. 1.

1 and 2, the thin film deposition apparatus 100 may correspond to an organic thin film chemical vapor deposition apparatus or the like used in the manufacture of a light emitting device. Thus, the deposition of the thin film using the thin film deposition apparatus 100 mentioned above is performed under high temperature process conditions.

The thin film deposition apparatus 100 according to an embodiment of the present invention includes a chamber 110 that provides a processing space for forming a thin film on a substrate. In particular, the chamber 110 according to an embodiment of the present invention may be understood as a structure including a lid 111 and a reactor 113 having a top and bottom structure separated into two. Here, since the chamber 110 is divided into two, the chamber 110 is described as including the lid 111 and the reactor 113, but the reactor 113 corresponds to the chamber 110 itself, It can be understood that the lead 113 is a member installed above the chamber 110. Thus, the chamber 110 may be understood to include a lid 111 installed above the chamber 110 to open and close the processing space of the chamber 110. Therefore, when the chamber 110 forms a thin film on the substrate, the chamber 110 provides a processing space for forming the thin film on the substrate, and the lid 111 is installed on the upper side of the chamber 110 to provide the processing space of the chamber 110. Perform opening and closing. That is, the inflow and outflow of the substrate is made into the chamber 110 through opening and closing of the lid 111. In this case, an O-ring 135 or the like may be provided to maintain the airtightness when the chamber 110, which is the reactor 113, and the lid 111 are combined.

In addition, the thin film deposition apparatus 100 includes a gas injector 125 capable of supplying and injecting a process gas to a substrate positioned in a processing space of the chamber 110. In particular, the gas injector 125 may be located above the chamber 110 so that the gas injector 125 may provide and inject a process gas on the substrate. Thus, the gas injection unit 125 may be provided in a structure that penetrates the lid 111 and faces the processing space. Here, the gas injection unit 125 may be provided as a shower head, a nozzle, or the like.

In addition, the chamber 110 is provided with disks 121 and 123 on which a substrate provided into the chamber 110 is seated. In particular, the disks 121 and 123 may include a main disk 121 and a satellite disk 123. Thus, the main disk 121 has a structure for accommodating the satellite disk 123. That is, the main disk 121 has a structure for accommodating the satellite disk 123 on which the substrate provided into the chamber 110 is seated. In addition, the main disk 121 has a structure supported by the support 129. The main disk 121 may have a rotating structure or a non-rotating structure. As mentioned, when the main disk 121 has a structure that rotates, although not shown, the support member 129 or the like may further include a driving member capable of rotating the main disk 121. That is, the support member 129 may be further provided with a drive member including a drive motor, a drive shaft, etc., so that the drive member may be further provided in a form capable of rotation by a belt or rotation by gear engagement. . In addition to the driving member having the mechanical structure mentioned above, the main disk 121 may have a structure that rotates by a flow of rotating gas, such as the satellite disk 123. In this case, although not shown, it can be achieved by forming a flow path and the like for flowing the gas for rotation to the main disk 121 through the support 129.

And as mentioned, the satellite disk 123 is accommodated in the main disk 121. In this case, at least two satellite disks 123 may be accommodated in each of the main disks 121. In particular, the satellite disk 123 has an upper surface on which a substrate provided into the chamber 110 is seated and a lower surface opposite to the upper surface. In addition, the satellite disk 123 has a structure that rotates by the flow of the gas for rotation. That is, the satellite disk 123 has a structure that rotates by the rotating gas flows from the center portion of the lower surface of the satellite disk 123 to the upper surface of the satellite disk 123 through the peripheral portion of the lower surface. In other words, the satellite disk 123 rises as the rotating gas flows to the center portion of the lower surface of the satellite disk 123, and then the rotating gas is moved from the center portion of the lower surface of the satellite disk 123 to the satellite disk. It rotates by flowing toward the upper surface of the satellite disk 123 through the peripheral portion of the lower surface of the (123). In this case, in order to more smoothly rotate the satellite disk 123, the lower surface of the satellite disk 123 may be formed to have an impeller structure.

Here, the rotating gas for the rotation of the satellite disk 123 mentioned above is mainly flowed by the rotating gas supply connected to the lower surface of the satellite disk 123 via the support 129 and the main disk 121. It may have a structure. In particular, the rotating gas supply unit may include a storage unit for storing the rotating gas, a valve for controlling the flow of the rotating gas, a mass flow controller (MFC) for controlling the amount of the rotating gas flows, and the like. have.

In addition, a heater 127 may be provided to form a deposition temperature when the thin film is deposited. In particular, the heater 127 may be provided under the main disk 121. However, although not shown, the heater 127 may be provided to be located at another part of the chamber 110 instead of under the main disk 121. That is, the position where the heater 127 is provided is not limited when the deposition temperature can be uniformly formed and maintained. In addition, the heater 127 may have a structure such as an electric coil and a lamp.

As described above, the aforementioned thin film deposition apparatus 100 rotates the satellite disk 123 while the substrate is seated on the upper surface of the satellite disk 123 through opening and closing of the lid 111. 121 is also rotated, the process gas is supplied and injected into the chamber 110 through the gas injector 125, and the heater 127 is used to uniformly control the deposition temperature, thereby uniformizing the substrate. Thin films having a thickness can be deposited.

Here, the deposition of the thin film using the above-mentioned thin film deposition apparatus 100 takes place at a high temperature. Therefore, when high temperature heat is transferred toward the lid 111, the lid 111 may be damaged.

Therefore, in one embodiment of the present invention provided with a heat dissipation unit 210 to form a thin film on the substrate, that is, to protect the lead 111 from the high temperature heat transmitted to the lead 111 inside the chamber 110 when deposition; It is. Thus, the heat dissipation unit 210 is efficiently provided on the ceiling of the lid 111 inside the chamber 110. That is, the heat dissipation unit 210 may be provided near the ceiling of the lead 111.

The heat dissipation unit 210 preferably has a structure having a hole 213a as shown in FIG. 2. This is because, as mentioned above, since the gas injector 125 is provided to penetrate the lid 111 toward the processing space, the heat dissipation unit 210 may have a hole (by considering the structure in which the gas injector 125 is installed). 213a).

The heat dissipation unit 210 may be formed of two plates 211 and 213. At this time, as mentioned in both the plates (211, 213) it is preferable to have a hole (213a) for the path in which the gas injection unit 125 is installed.

In addition, the heat dissipation unit 210 is provided to have different materials as the two plates 211 and 213. Thus, the heat dissipation unit 210 is provided with a first plate 213 made of quartz and a second plate 211 made of graphite. Here, the first plate 213 made of quartz is provided toward the ceiling, and the second plate 211 made of graphite is provided toward the inside of the chamber 110. That is, the heat dissipation unit 210 is provided such that the first plate 213 and the second plate 211 are located side by side.

Here, since the first plate 213 is made of quartz, the first plate 213 may sufficiently block the high temperature heat transferred to the lead 111. However, the generation of particles can not be excluded due to the nature of quartz. That is, the first plate 213 made of quartz may sufficiently block high temperature heat, but particles may be generated due to high temperature heat. Therefore, when the heat dissipation unit 210 is provided with the first plate 213 made of quartz alone or facing toward the inside of the chamber 110 instead of the ceiling, it may interfere with thin film deposition due to the generation of the mentioned particles. It can be. In addition, there is a difficulty in performing maintenance frequently to remove the particles mentioned.

In addition, since the second plate 211 is made of graphite, heat transmitted to the lead 111 may be sufficiently blocked. However, due to the thermal conductivity of graphite, it is impossible to exclude a situation in which high temperature heat can be transferred to the lead 111 as it is. That is, although the second plate 211 made of graphite can sufficiently block high temperature heat, a situation may occur in which the lead 111 is damaged because of good thermal conductivity. Therefore, when the heat dissipation unit 210 is provided with the second plate 211 made of graphite alone or facing the ceiling rather than inside the chamber 110, the lead 111 as in the related art due to the good thermal conductivity mentioned above. ) Can be damaged, such as bending.

Thus, in one embodiment of the present invention, as mentioned above, the first plate 213 made of quartz and the second plate 211 made of graphite are provided together, and the first plate 213 made of quartz is provided toward the ceiling. And a second plate 211 made of graphite facing the inside of the chamber 110. Therefore, the second plate 211 made of graphite can sufficiently block the high temperature heat transmitted from the inside of the chamber 110 toward the ceiling, and the second plate 211 made of graphite is made of the first plate 213 made of graphite. Due to the good thermal conductivity of), it is possible to sufficiently block heat directed toward the ceiling, and as a result, damage to the lead 111 such as the lead 111 is bent due to high temperature heat can be prevented in advance. In addition, even if particles are generated in the first plate 213 made of quartz by high temperature heat, the second plate 211 is provided to be positioned under the particles, thereby preventing the particles from flowing into the chamber 110. As a result, the effect of the particles mentioned on the thin film deposition can be sufficiently reduced, and the maintenance period for the inside of the chamber 110 for removing the particles can be sufficiently increased.

Therefore, the thin film deposition apparatus 100 of the present invention is necessarily provided toward the ceiling when the heat dissipation unit 210 including the two plates 211 and 213 having different materials on the ceiling of the lid 111 is provided toward the ceiling. A first plate 213 made of quartz) and a second plate 211 made of graphite are provided toward the inside of the chamber 110.

In addition, since high temperature heat is transferred to the heat dissipation unit 210, the mixed gas in which the N 2 gas and the H 2 gas are mixed may be flowed to the heat dissipation unit 210. That is, the heat dissipation unit 210 may be cooled to some extent by flowing the aforementioned mixed gas into the heat dissipation unit 210.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims. You will understand.

According to the present invention mentioned, when the thin film is deposited in a high temperature atmosphere by using the thin film deposition apparatus, even if the heat of the high temperature is transferred to the lead, the heat dissipation part sufficiently blocks the heat transmitted to the lead, thereby sufficiently preventing the lead from being damaged. can do. Therefore, in the case of a thin film deposition apparatus in which a process is performed at a high temperature such as an organometallic chemical vapor deposition apparatus, the thin film deposition can be easily performed under a set process condition of a high temperature atmosphere, and as a result, a thin film having a uniform thickness can be more easily formed. Can be.

Therefore, the thin film deposition apparatus of the present invention has an advantage that it can be more actively utilized in the manufacture of integrated circuit devices such as light emitting devices required in the recent high temperature process.

100: thin film deposition apparatus 110: chamber
111: lead 113: reactor
121: main disk 123: satellite disk
125 gas injector 127 heater
129: support 135: O-ring
210: heat radiating portion 211: second plate
213: first plate

Claims (2)

A chamber providing a processing space for forming a thin film on the substrate;
A disk located in the chamber and having a substrate provided therein;
A lid disposed above the chamber to open and close the processing space of the chamber; And
When forming a thin film on the substrate characterized in that it comprises a heat dissipation portion consisting of two plates of different materials in the ceiling (ceiling) of the lead to protect the lead from the heat transferred to the lid inside the chamber Thin film deposition apparatus. The thin film deposition as claimed in claim 1, wherein the heat dissipation part comprises a first plate provided toward the ceiling, a first plate made of quartz, and a second plate made of graphite, and formed of graphite. Device.
KR1020110124184A 2011-11-25 2011-11-25 Apparatus of depositing thin film KR20130058266A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110124184A KR20130058266A (en) 2011-11-25 2011-11-25 Apparatus of depositing thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110124184A KR20130058266A (en) 2011-11-25 2011-11-25 Apparatus of depositing thin film

Publications (1)

Publication Number Publication Date
KR20130058266A true KR20130058266A (en) 2013-06-04

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Country Status (1)

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